CN110752141A - 一种太阳能电池cigs吸收层的制备方法 - Google Patents
一种太阳能电池cigs吸收层的制备方法 Download PDFInfo
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- CN110752141A CN110752141A CN201810813615.4A CN201810813615A CN110752141A CN 110752141 A CN110752141 A CN 110752141A CN 201810813615 A CN201810813615 A CN 201810813615A CN 110752141 A CN110752141 A CN 110752141A
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- 238000010521 absorption reaction Methods 0.000 title abstract description 16
- 238000002360 preparation method Methods 0.000 title abstract description 12
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 title description 47
- 238000000151 deposition Methods 0.000 claims abstract description 84
- 238000001704 evaporation Methods 0.000 claims abstract description 57
- 238000000034 method Methods 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 238000010549 co-Evaporation Methods 0.000 claims abstract description 44
- 230000008021 deposition Effects 0.000 claims description 41
- 230000008569 process Effects 0.000 claims description 18
- 239000006096 absorbing agent Substances 0.000 claims description 12
- 239000005361 soda-lime glass Substances 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 12
- 239000010410 layer Substances 0.000 description 85
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 68
- 230000008020 evaporation Effects 0.000 description 41
- 235000013024 sodium fluoride Nutrition 0.000 description 34
- 239000011775 sodium fluoride Substances 0.000 description 34
- 239000010949 copper Substances 0.000 description 27
- 239000010409 thin film Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 238000007738 vacuum evaporation Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 240000002329 Inga feuillei Species 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
- H01L31/0323—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2 characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Materials Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810813615.4A CN110752141B (zh) | 2018-07-23 | 2018-07-23 | 一种太阳能电池cigs吸收层的制备方法 |
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CN201810813615.4A CN110752141B (zh) | 2018-07-23 | 2018-07-23 | 一种太阳能电池cigs吸收层的制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN110752141A true CN110752141A (zh) | 2020-02-04 |
CN110752141B CN110752141B (zh) | 2022-01-11 |
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CN201810813615.4A Active CN110752141B (zh) | 2018-07-23 | 2018-07-23 | 一种太阳能电池cigs吸收层的制备方法 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112331729A (zh) * | 2020-11-04 | 2021-02-05 | 凯盛光伏材料有限公司 | Cigs薄膜太阳能电池的光吸收层及其形成方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120238053A1 (en) * | 2009-11-24 | 2012-09-20 | Aqt Solar, Inc. | Chalcogenide Absorber Layers for Photovoltaic Applications and Methods of Manufacturing the Same |
US8404512B1 (en) * | 2011-03-04 | 2013-03-26 | Solopower, Inc. | Crystallization methods for preparing group IBIIIAVIA thin film solar absorbers |
CN204271113U (zh) * | 2014-11-17 | 2015-04-15 | 中国电子科技集团公司第十八研究所 | 一种柔性衬底上共蒸发制备高结合力吸收层的装置 |
US20150207011A1 (en) * | 2013-12-20 | 2015-07-23 | Uriel Solar, Inc. | Multi-junction photovoltaic cells and methods for forming the same |
CN104969329A (zh) * | 2013-02-12 | 2015-10-07 | 日东电工株式会社 | Cigs膜的制法以及使用该制法的cigs太阳能电池的制法 |
-
2018
- 2018-07-23 CN CN201810813615.4A patent/CN110752141B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120238053A1 (en) * | 2009-11-24 | 2012-09-20 | Aqt Solar, Inc. | Chalcogenide Absorber Layers for Photovoltaic Applications and Methods of Manufacturing the Same |
US8404512B1 (en) * | 2011-03-04 | 2013-03-26 | Solopower, Inc. | Crystallization methods for preparing group IBIIIAVIA thin film solar absorbers |
CN104969329A (zh) * | 2013-02-12 | 2015-10-07 | 日东电工株式会社 | Cigs膜的制法以及使用该制法的cigs太阳能电池的制法 |
US20150357492A1 (en) * | 2013-02-12 | 2015-12-10 | Nitto Denko Corporation | Cigs film production method, and cigs solar cell production method using the cigs film production method |
US20150207011A1 (en) * | 2013-12-20 | 2015-07-23 | Uriel Solar, Inc. | Multi-junction photovoltaic cells and methods for forming the same |
CN204271113U (zh) * | 2014-11-17 | 2015-04-15 | 中国电子科技集团公司第十八研究所 | 一种柔性衬底上共蒸发制备高结合力吸收层的装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112331729A (zh) * | 2020-11-04 | 2021-02-05 | 凯盛光伏材料有限公司 | Cigs薄膜太阳能电池的光吸收层及其形成方法 |
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