CN110739198A - 基底加工方法 - Google Patents

基底加工方法 Download PDF

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CN110739198A
CN110739198A CN201910533674.0A CN201910533674A CN110739198A CN 110739198 A CN110739198 A CN 110739198A CN 201910533674 A CN201910533674 A CN 201910533674A CN 110739198 A CN110739198 A CN 110739198A
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substrate
time
susceptor
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堅固山裕子
吉田嵩志
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ASM IP Holding BV
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Abstract

基底加工方法的示例包括：使放置在基座上的基底经受等离子体加工；向面对所述基座的射频电极只施加预定的静电去除时间的功率以产生等离子体，由此减少所述基底的电荷量；在使基座销从所述基座的顶表面突出并且提起所述基底的同时测量所述射频电极的自偏压；以及通过控制器，当所述自偏压具有正值时缩短所述静电去除时间，并且当所述自偏压具有负值时加长所述静电去除时间。

Description

基底加工方法
技术领域
描述的示例涉及一种基底加工方法。
背景技术
在薄膜形成加工之后，尤其是在高功率和低温加工中，硅基底可以粘住基座用作阴极。已经考虑了，当通过射频(RF)功率产生等离子体并且执行薄膜形成时，硅基底通过电荷而被充电，使得基座(susceptor)和硅基底彼此静电地吸引并且彼此粘住。
当基座销与基底的后表面接触以在基底粘住基座的状态下提起基底时，基底被从基座强迫地剥离，使得很大的力作用在基底上。作用在基底上的很大的力由于基底的位移而引起基底的转移错误，或者损坏基座销或者基底。
为了抑制基底粘住基座，需要根据基底的电荷量来执行适当的等离子体后加工，以减小基底的电荷量。即，需要根据基底的电荷量来执行静电的去除。基底的电荷量依据等离子体加工的内容而变化。例如，基底的电荷量依据等离子体辐照时间或者薄膜形成下的功率而变化。
发明内容
本文描述的一些示例可以解决上述问题。本文描述的一些示例可以提供一种基底加工方法，其能够通过减小基底的电荷量来抑制基底粘住基座。
在一些示例中，基底加工方法包括：使放置在基座上的基底经受等离子体加工；向面对基座的射频电极只施加预定的静电去除时间的功率以产生等离子体，由此减小基底的电荷量，在使基座销从基座的顶表面突出并且提起基底的同时测量射频电极的自偏压；以及通过控制器，当自偏压具有正值时缩短静电去除时间，并且当自偏压具有负值时延长静电去除时间。
附图说明
图1为示出了基底加工设备的示例性构造的简图；
图2为示出了基座向下移动的简图；
图3为示出了基座进一步向下移动的简图；
图4为示出了基底加工方法的示例的流程图；
图5为示出了射频功率的应用的示例的简图；
图6为示出了自偏压的示例的简图；
图7为示出了基底的粘住存在与否与Vdc振幅之间的关系的简图；
图8为图示出第二时间的长度与Vdc振幅之间的关系的简图；以及
图9为示出了基底加工方法的流程图。
具体实施方式
将参照附图描述根据一些示例的基底加工方法。相同或对应的组成元件由相同的附图标记表示，并且可以省略其重复的描述。
图1为示出了基底加工设备的示例性构造的简图。基座12设置在腔室10中。作为加工目标的基底13可以放置在基座12上。基底13例如为硅晶圆。基座12可以通过驱动单元14竖直地移动。驱动单元14经由TMC(Transfer ModuleController，转移模块控制器)16接收来自UPC(Unique Platform Controller，独有平台控制器)18的指令，并且根据所述指令使基座12竖直地移动。用于检测基座12的振动的振动传感器20固定至基座12。
基座销21例如固定至腔室10，并且当基底13转移时支撑基底13。当基座12位于高位置时，基座销21位于基座12的顶表面下方。当基座12位于低位置时，基座销21突出到基座12的顶表面的上侧。
射频电极30设置在基座12上方。射频电极30可以例如设置在环形构造的排放管道32上方。射频电极30设置为以便面对基座12，由此提供平行平坦的板结构。射频电极30设置有通孔。例如，从填充有用于在基底13上形成薄膜的气体的气源42经由射频电极30的通孔来提供经受质量流控制器40的流速控制的气体。射频发生器36经由匹配电路34而连接至射频电极30。从UPC18接收指令的PMC(Process Module Controller，处理模块控制器)38控制射频发生器36和质量流控制器40。
如上所述，图1所示的基底加工设备能够被构造为等离子体加工设备。等离子体加工例如为用于在基底上形成薄膜、在基底上重新形成薄膜或者对基底的一部分进行蚀刻的加工。
图2为示出了相比于图1的情况基座12通过驱动单元14向下移动的简图。基座12的向下移动使基座销21与基底13的后表面接触。图3为示出了基座12通过驱动单元14进一步向下移动的简图。此时，基座12与基底13分离，并且基底13仅由基座销21支撑。转移臂插入基底13与基座12之间，并且向上移动，凭此允许基底13被支撑并且通过转移臂转移。
图4为示出了基底加工方法的示例的流程图。在该示例中，在方框B1中，首先在放置在基座12上的基底13上执行等离子体加工。在等离子体加工中，例如，在反应气体被供应到射频电极30与基座12之间的间隙中的同时，交流功率被施加至射频电极30，由此产生等离子体并且在基底上形成薄膜。可以执行使用等离子体的另一个加工。通过该等离子体加工使基底13通过电荷而被充电。
接下来，在方框B2中，减小基底的电荷量。该加工也可以称作静电去除。在该情况下，向射频电极30只施加预定的静电去除时间的功率以产生等离子体，由此减小基底13的电荷量。供应的气体可以是惰性气体或者反应气体。例如，针对静电去除而供应的等离子体可以是惰性气体等离子体。术语“静电去除”不仅包含完全的静电去除，而且包含电荷量的减小。
图5为示出了在静电去除下的射频功率的施加的示例。静电去除时间例如包含第一时间T1、第二时间T2以及第三时间T3。第一时间T1为从时刻t0到时刻t1的时期。第一时间T1为向射频电极30施加功率以产生等离子体的时期。第一时间T1可以被设定为等离子体已经稳定之前的任何时期。第一时间T1例如被设定为3秒。
第二时间T2为从时刻t1到时刻t2的时期。对于第二时间T2，射频电极30的功率以预定的第一速率被减小。例如，140V的射频功率在20秒内减小至110V。第三时间T3为从时刻t2到时刻t3的时期。对于第三时间T3，射频电极30的功率以预定的第二速率被减小到0V。例如，110V的射频功率在5秒内减小至0V。在通过前述的三个步骤改变射频功率的同时执行等离子体照射，凭此能够减小基底13的电荷量。射频功率可以通过另一种方法改变。
随后，在方框B3中，使基座销21从基座12的顶表面突出并且提起基底13。在包含提起基底13所处的时刻的某个时期期间测量射频电极30的自偏压。
将描述自偏压。首先，施加至射频电极30的交流电压的最大电压与最小电压之间的差别已知为VPP(Volt peak to peak，峰峰值电压)。VPP能够用于运用射频等离子体的过程中的监测等。具体地，匹配电路34设置有VPP传感器，并且由VPP传感器获得的VPP的数值能够由UPC18等监测。作为VPP的中间点的电压被称作自偏压或者Vdc(Volt DirectCurrent，直流电压)。例如，Vdc能够通过向用于射频功率供应的匹配电路提供阻塞电容器而产生。自偏压一直都在被测量，例如，以便监测薄膜形成期间的等离子体的状态，并且被存储在PLC记录器中。薄膜形成期间的自偏压通常是最小的。
图6为示出在图4的方框B3的加工中测量的自偏压的示例的简图。图6示出了在通过将第二时间T2设定为2秒、10秒以及40秒而执行静电去除之后使基座销21从基座12突出并且提起基底13时的自偏压。例如，当在通过将第二时间T2设定为2秒而执行静电去除之后测量自偏压时，自偏压暂时减小至大约-0.7V。基极电压与峰值电压之间的差别表现为Vdc振幅。当在通过将第二时间T2设定为10秒而执行静电去除之后测量自偏压时，自偏压暂时减小至大约-0.2V。当在通过将第二时间T2设定为40秒而执行静电去除之后测量自偏压时，自偏压暂时增加至大约0.6V。如上所述，通过调节第二时间T2的长度，例如，能够控制作为薄膜加工目标的基底13的电荷量。
随着当基底13被基座销21提起时自偏压的变化量越大，基底13的电荷量越大。换言之，基底13与基座12越紧密接触，并且随着当基底13被基座销21提起时自偏压的绝对值越大，基底13的电荷量[C/m2]越大。为了抑制由基底13粘住基座12而引起的故障，基底13的电荷量应当通过静电去除而减小，从而当基底13被基座销21提起时减小自偏压(Vdc)。
图7为示出了基底13被基座销21提起时的基底的粘住存在与否与Vdc振幅之间的关系的简图。横坐标轴代表在基底上进行的等离子体加工中采用的射频功率。纵坐标轴代表Vdc振幅。例如，如图6所示，Vdc振幅代表基底被基座销提起时的自偏压的变化量。在由“x”指示的位置处，基底13粘住基座12，使得基座12关联于基底13被基座销21提起而振动。在由“o”代表的位置处，不存在检测到的关联于基底13被基座销21提起的任何振动。例如通过图1的振动传感器20，能够检测基座12的振动。
从图7明显的是，当Vdc振幅等于-1或更小时，基底13有粘住基座12的倾向。图8为图示出第二时间T2的长度与Vdc振幅之间的关系的简图。当第二时间T2被设定为大约20秒时，Vdc振幅大致等于零。因此，明显的是，基底13已经经受充分的静电去除。然而，甚至当使第二时间T2大于或小于20秒时，Vdc振幅的绝对值也增加。在图8的示例中，通过第二时间T2的增加，Vdc振幅从负值变为正值。在该情况下，在静电去除之后，甚至当使第二时间T2大于或小于20秒时，明显的电荷保留在基底13中。在该示例中，当第二时间T2被设定为大约20秒时，实现大致等于零的Vdc振幅。然而，依据电荷量，可以在其他示例中使用其他的第二时间T2。
接下来，在方框B4中，判定加工是否完成。当不存在待加工的基底时，判定转到“是”以完成加工。当将要加工新的基底时，判定转到“否”。
当在方框B4中判定需要加工新的基底时，加工转到方框B5。在方框B5中，如果需要，根据在方框B3中测量的自偏压来调节静电去除时间。例如可以通过用作控制器的UPC18来执行这样的调节。例如，控制器当自偏压具有正值时缩短静电去除时间，并且当自偏压具有负值时加长静电去除时间。更具体地，当自偏压具有正值时，可以缩短第二时间T2，并且当自偏压具有负值时，可以加长第二时间T2。调节之后的静电去除时间可以被应用至下一个基底的静电去除。
当在基底13被基座销21提起的时间测量的自偏压具有正值时，需要在图8的示例的情况下缩短第二时间T2。另一方面，当在基底13被基座销21提起的时间测量的自偏压具有负值时，需要在图8的示例的情况下加长第二时间T2。如上所述，在控制器中确定待应用至下一个基底的第二时间T2，以便充分地去除下一个基底的静电。在方框B6中，执行第二时间T2的前述调节。例如，更新存储在控制器的存储单元中的第二时间T2。
此后，通过使用调节后的第二时间T2在新的基底上执行前述一系列的加工。简言之，在新的基底上执行与在已加工的基底上执行的等离子体加工相同的等离子体加工，使得在新的基底上产生电荷。随后，通过调节后的第二时间T2使新的基底经受静电去除，凭此能够明显减少基底的电荷量。因此，能够抑制基底粘住基座。
可以改变图4所示的静电去除的主旨。例如，将第二时间T2设定为比第三时间T3长，但是可以在每个阶段改变时间。当在相继加工的基底上执行具有相同内容的等离子体加工时，可以连续使用调节后的第二时间T2。因此，当调节第二时间T2一次时，能够以执行相同的等离子体加工的程度省略第二时间T2的调节。另一方面，能够通过在基底的全部加工中调节第二时间或者在某个周期调节第二时间来获得之前已经调节过的第二时间。
根据该基底加工方法，随着进一步重复基底加工，积累代表静电去除时间与Vdc振幅之间的关系的数据。因此，控制器没有通过仅参照最新的数据来调节静电去除时间，而是能够通过参照全部积累的数据来优化静电去除时间。通过使用相继获得的自偏压的数据，能够优化静电去除时间并且能够有效地减少基底的电荷量。
假设在基底加工中改变方法。当改变基底加工的方法时，控制器可以根据所述方法改变静电去除时间。即，控制器可以针对每个方法调节静电去除时间，并且存储和使用针对每个方法调节的静电去除时间。
从图7中明显的是，随着等离子体加工的等离子体功率越大，基底越趋于粘住基座。即，随着等离子体加工的等离子体功率越大，基底的电荷量变得越大。因此，随着等离子体加工的等离子体功率越大，控制器可以进一步加长静电去除时间。
图9为示出根据另一个示例的基底加工方法的流程图。在方框B1中，执行最优静电去除时间的条件设定。在该条件设定中，在改变静电去除时间的同时，多次执行等离子体加工、静电去除加工以及自偏压的测量。例如，首先使放置在基座12上的第一基底经受等离子体加工。随后，将功率只以预定的静电去除时间施加至射频电极30，以减少第一基底的电荷量。之后，使基座12向下移动，使得基座销21从基座12的顶表面突出并提起第一基底，并且在此时测量射频电极30的自偏压。此后，改变静电去除时间，并且在另一个第一基底上执行一系列的加工。通过重复上述操作来获得静电去除时间与Vdc振幅之间的关系。例如，获得如图8所示地静电去除时间与Vdc振幅之间的关系。
随后，在方框B2中，在第二基底上执行与第一基底的等离子体加工相同的等离子体加工。随后，在方框B3中使第二基底经受静电去除。在该静电去除中，只将功率以提供了通过针对第一基底多次测量自偏压而获得的自偏压中的具有最小绝对值的自偏压的静电去除时间施加至射频电极30。例如，预先在方框B1中挑选提供了具有最小绝对值的自偏压的静电去除时间，并且可以针对所挑选的静电去除时间来在方框B3中执行静电去除。
随后，在方框B4中，在通过前述加工减少了第二基底的电荷量之后，第二基底被基座销21提起并由转移臂转移。随后，在方框B5中判定是否完成了基底的加工。当基底加工继续时，在方框B6中检查是否将改变方法。当没有改变方法时，将在方框B1中获得的静电去除时间施加至新的基底。另一方面，当存在方法的任何改变时，加工转到方框B1，根据前述主旨针对改变的方法执行获得最优静电去除时间的条件设定。
例如，第一基底为仿真基底，而第二基底为产品基底。例如，可以用于减少用于静电去除时间的射频功率的过程而采用在图5中描述的第一时间、第二时间以及第三时间。在该示例中，第二时间长于第三时间。
可以测量基底13被基座销21提起时的Vdc振幅，并且可以通过不同于前述方法的方法来调节静电去除时间，使得Vdc振幅接近零。例如，Vdc振幅的数据可以用于反馈控制或者前馈控制。通过三个步骤来配置静电去除时间，但是可以改变为其他内容。
基底加工设备的构造可以改变为能够执行等离子体加工的任何构造。例如，用于执行诸如PEALD或者PECVD的加工的等离子体辅助薄膜形成设备可以被用作基底加工设备。

Claims (10)

1.一种基底加工方法，包括：
使放置在基座上的基底经受等离子体加工；
向面对所述基座的射频电极只施加预定的静电去除时间的功率以产生等离子体，由此减少所述基底的电荷量；
在使基座销从所述基座的顶表面突出并且提起所述基底的同时测量所述射频电极的自偏压；以及
通过控制器，当所述自偏压具有正值时缩短所述静电去除时间，并且当所述自偏压具有负值时加长所述静电去除时间。
2.根据权利要求1所述的基底加工方法，其中，所述静电去除时间包括：
第一时间，以所述第一时间向所述射频电极施加功率以产生等离子体；
第二时间，在经过所述第一时间后，以预定的第一速率以所述第二时间降低施加至所述射频电极的功率；以及
第三时间，在经过所述第二时间后，以预定的第二速率以所述第三时间将施加至所述射频电极的所述功率降低到零。
3.根据权利要求2所述的基底加工方法，其中，所述控制器当所述自偏压具有正值时缩短所述第二时间，并且当所述自偏压具有负值时加长所述第二时间。
4.根据权利要求2或3所述的基底加工方法，其中，所述第二时间比所述第三时间长。
5.根据权利要求1至3中任一项所述的基底加工方法，其中，所述控制器根据加工所述基底的方法改变所述静电去除时间。
6.根据权利要求1至3中任一项所述的基底加工方法，其中，随着所述等离子体加工的等离子体功率越大，所述控制器使所述静电去除时间越长。
7.一种基底加工方法，包括：
重复多次：使放置在基座上的第一基底经受等离子体加工，向面对所述基座的射频电极只施加预定的静电去除时间的功率以减少所述第一基底的电荷量，以及当使基座销从所述基座的顶表面突出并且提起所述第一基底时测量所述射频电极的自偏压，同时改变所述静电去除时间；
使放置在所述基座上的第二基底经受与所述第一基底的所述等离子体加工相同的等离子体加工；以及
向所述射频电极只施加提供通过多次测量所述自偏压而获得的所述自偏压中的具有最小绝对值的自偏压的静电去除时间的功率，由此减少所述第二基底的电荷量。
8.根据权利要求7所述的基底加工方法，其中，所述第一基底为仿真基底，而所述第二基底为产品基底。
9.根据权利要求7或8所述的基底加工方法，其中，所述静电去除时间包括：
第一时间，以所述第一时间向所述射频电极施加功率以产生等离子体；
第二时间，在经过所述第一时间后，以预定的第一速率以所述第二时间降低施加至所述射频电极的功率；以及
第三时间，在经过所述第二时间后，以预定的第二速率以所述第三时间将施加至所述射频电极的所述功率降低到零。
10.根据权利要求9所述的基底加工方法，其中，所述第二时间比所述第三时间长。
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