JP2020013995A - 基板処理方法 - Google Patents
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Abstract
Description
図1は基板処理装置の構成例を示す図である。チャンバ10の中にはサセプタ12が設けられている。サセプタ12の上に処理対象となる基板13を設けることができる。基板13は例えばSiウエハである。サセプタ12は駆動部14によって上下動させることができる。駆動部14は、TMC(Transfer Module Controller)16を介してUPC(unique platform controller)18からの指令を受け、その指令に応じてサセプタ12を上下動させる。サセプタ12にはサセプタ12の振動を検知する振動センサ20が取り付けられている。
Claims (10)
- サセプタの上に設けられた基板にプラズマ処理を施すことと、
前記サセプタに対向するRF電極に予め定められた除電時間だけ電力を印加してプラズマを生じさせることで、前記基板の電荷量を減少させることと、
サセプタピンを前記サセプタの上面から突出させて前記サセプタピンで前記基板を持ち上げつつ、前記RF電極の自己バイアス電圧を測定することと、
制御部により、前記自己バイアス電圧が正の値であるときは前記除電時間を短くし、前記自己バイアス電圧が負の値であるときは前記除電時間を長くすることと、を備えたことを特徴とする基板処理方法。 - 前記除電時間は、
前記RF電極に電力を印加してプラズマを生じさせる第1時間と、
前記第1時間の経過後に予め定められた第1レートで前記RF電極のパワーを低下させる第2時間と、
前記第2時間の経過後に予め定められた第2レートで前記RF電極のパワーを0まで低下させる第3時間を含むことを特徴とする請求項1に記載の基板処理方法。 - 前記制御部は、前記自己バイアス電圧が正の値であるときは前記第2時間を短くし、前記自己バイアス電圧が負の値であるときは前記第2時間を長くすることを特徴とする請求項2に記載の基板処理方法。
- 前記第2時間は前記第3時間より長いことを特徴とする請求項2又は3に記載の基板処理方法。
- 前記制御部は、前記基板を処理するためのレシピに応じて前記除電時間を変更することを特徴とする請求項1から4のいずれか1項に記載の基板処理方法。
- 前記制御部は、前記プラズマ処理のプラズマパワーが大きいほど前記除電時間を長くすることを特徴とする請求項1から4のいずれか1項に記載の基板処理方法。
- サセプタの上に設けられた第1基板にプラズマ処理を施すことと、
前記サセプタに対向するRF電極に予め定められた除電時間だけ電力を印加して前記第1基板の電荷量を減少させることと、
サセプタピンを前記サセプタの上面から突出させて、前記サセプタピンで前記第1基板を持ち上げたときの前記RF電極の自己バイアス電圧を測定することと、を前記除電時間を変更して複数回行い、
前記サセプタの上に設けられた第2基板に前記第1基板に対するプラズマ処理と同じプラズマ処理を施すことと、
複数回の前記自己バイアス電圧の測定で得られた前記自己バイアス電圧のうち絶対値が最小の自己バイアス電圧を与える前記除電時間だけ、前記RF電極に電力を印加して前記第2基板の電荷量を減少させることと、を備えたことを特徴とする基板処理方法。 - 前記第1基板はダミー基板であり、前記第2基板は製品基板であることを特徴とする請求項7に記載の基板処理方法。
- 前記除電時間は、
前記RF電極に電力を印加してプラズマを生じさせる第1時間と、
前記第1時間の経過後に予め定められた第1レートで前記RF電極のパワーを低下させる第2時間と、
前記第2時間の経過後に予め定められた第2レートで前記RF電極のパワーを0まで低下させる第3時間を含むことを特徴とする請求項7に記載の基板処理方法。 - 前記第2時間は前記第3時間より長いことを特徴とする請求項9に記載の基板処理方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/040,755 | 2018-07-20 | ||
US16/040,755 US10770257B2 (en) | 2018-07-20 | 2018-07-20 | Substrate processing method |
Publications (2)
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