CN110678991B - 发光装置、投影仪以及发光装置的制造方法 - Google Patents

发光装置、投影仪以及发光装置的制造方法 Download PDF

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Publication number
CN110678991B
CN110678991B CN201880034936.2A CN201880034936A CN110678991B CN 110678991 B CN110678991 B CN 110678991B CN 201880034936 A CN201880034936 A CN 201880034936A CN 110678991 B CN110678991 B CN 110678991B
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light emitting
light
base
emitting device
electrode
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CN110678991A (zh
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加濑谷浩康
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Seiko Epson Corp
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Seiko Epson Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8585—Means for heat extraction or cooling being an interconnection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages

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CN201880034936.2A 2017-05-31 2018-05-23 发光装置、投影仪以及发光装置的制造方法 Active CN110678991B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017108346A JP6972665B2 (ja) 2017-05-31 2017-05-31 発光装置、プロジェクター、および発光装置の製造方法
JP2017-108346 2017-05-31
PCT/JP2018/019841 WO2018221351A1 (ja) 2017-05-31 2018-05-23 発光装置、プロジェクター、および発光装置の製造方法

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CN110678991A CN110678991A (zh) 2020-01-10
CN110678991B true CN110678991B (zh) 2022-12-23

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US (1) US11239390B2 (https=)
JP (1) JP6972665B2 (https=)
CN (1) CN110678991B (https=)
WO (1) WO2018221351A1 (https=)

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JP7147132B2 (ja) * 2017-05-31 2022-10-05 セイコーエプソン株式会社 発光装置、プロジェクター、および発光装置の製造方法
JP6954562B2 (ja) * 2017-09-15 2021-10-27 セイコーエプソン株式会社 発光装置およびその製造方法、ならびにプロジェクター
US20200091388A1 (en) 2018-09-19 2020-03-19 Vuereal Inc. Highly efficient microdevices
JP2021150373A (ja) * 2020-03-17 2021-09-27 セイコーエプソン株式会社 発光装置、プロジェクター、およびディスプレイ
JP7776817B2 (ja) * 2021-09-13 2025-11-27 セイコーエプソン株式会社 発光装置、プロジェクター、およびディスプレイ
JP2024108649A (ja) * 2023-01-31 2024-08-13 ウシオ電機株式会社 光源装置

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JP2000261088A (ja) 1999-03-05 2000-09-22 Hitachi Ltd 発光素子
US7022550B2 (en) * 2004-04-07 2006-04-04 Gelcore Llc Methods for forming aluminum-containing p-contacts for group III-nitride light emitting diodes
KR100624419B1 (ko) * 2004-04-07 2006-09-19 삼성전자주식회사 나노와이어 발광소자 및 그 제조방법
JP2008047850A (ja) 2006-07-19 2008-02-28 Mitsubishi Cable Ind Ltd 窒化物半導体発光ダイオード素子
JP2007235122A (ja) * 2006-02-02 2007-09-13 Matsushita Electric Ind Co Ltd 半導体発光装置及びその製造方法
US7786491B2 (en) 2006-02-02 2010-08-31 Panasonic Corporation Semiconductor light-emitting device comprising a plurality of semiconductor layers
JP5029079B2 (ja) 2007-03-15 2012-09-19 富士ゼロックス株式会社 半導体素子および光学装置
JP4984170B2 (ja) * 2008-04-01 2012-07-25 日本電信電話株式会社 光半導体素子の実装構造
US20100038670A1 (en) * 2008-08-18 2010-02-18 Luminus Devices, Inc. Illumination assembly including chip-scale packaged light-emitting device
CN102187479B (zh) * 2008-09-01 2014-06-18 学校法人上智学院 半导体光学元件阵列及其制造方法
US20100117070A1 (en) * 2008-09-18 2010-05-13 Lumenz Llc Textured semiconductor light-emitting devices
JP2010153561A (ja) * 2008-12-25 2010-07-08 Nichia Corp 発光装置
CN101859824A (zh) * 2009-04-07 2010-10-13 山东璨圆光电科技有限公司 双回路电极设计的发光二极管芯片
JP5679117B2 (ja) * 2011-03-09 2015-03-04 セイコーエプソン株式会社 発光装置、照射装置、およびプロジェクター
JP2013042079A (ja) 2011-08-19 2013-02-28 Sharp Corp 半導体発光装置
US20150021626A1 (en) 2012-04-27 2015-01-22 Panasonic Corporation Light-emitting device
JP2015056652A (ja) * 2013-09-13 2015-03-23 株式会社東芝 窒化物半導体発光装置
KR20150035111A (ko) * 2013-09-27 2015-04-06 서울바이오시스 주식회사 주변 발광부를 구비하는 발광다이오드 칩
US10304998B2 (en) * 2013-09-27 2019-05-28 Seoul Viosys Co., Ltd. Light emitting diode chip and light emitting device having the same
US10910350B2 (en) * 2014-05-24 2021-02-02 Hiphoton Co., Ltd. Structure of a semiconductor array
CN204144306U (zh) * 2014-09-16 2015-02-04 惠州比亚迪实业有限公司 Led芯片
TWI772266B (zh) * 2015-07-13 2022-08-01 挪威商卡亞奈米公司 發光二極體裝置及光偵測器裝置

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Publication number Publication date
JP2018206860A (ja) 2018-12-27
US11239390B2 (en) 2022-02-01
US20200152833A1 (en) 2020-05-14
JP6972665B2 (ja) 2021-11-24
WO2018221351A1 (ja) 2018-12-06
CN110678991A (zh) 2020-01-10

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