CN110676175A - 一种键合工艺制作大锡球的方法 - Google Patents
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Abstract
本发明公开了一种键合工艺制作大锡球的方法,具体包括如下步骤:101)预处理步骤、102)键合步骤、103)电镀步骤、104)大锡球制作步骤;本发明提供双层胶曝光的方式制作的一种新型电镀法制作大锡球方法。
Description
技术领域
本发明涉及半导体技术领域,更具体的说,它涉及一种键合工艺制作大锡球的方法。
背景技术
晶圆级封装技术是先进封装领域用的最广的一种技术,尤其是对于消费类产品,晶圆级封装以其尺寸小,重量轻,厚度薄等优点,被广泛应用于移动电子设备,微型功能设备上。
晶圆级封装对外焊接互联一般用焊锡球或者金属凸点,焊锡球的制作工艺包括直接植球,用焊锡膏制作焊球以及电镀工艺制作焊球,凸点则包括种植金属柱和电镀凸点两种。但是在电镀制作焊锡球的工艺中,电镀锡的高度会受到光刻胶层的厚度影响,如果要制作较大的焊球,则需要电镀非常厚的焊锡,现在的光刻涂胶工艺一般很难做到。如果增加电镀面积,则可以增加电镀锡的量,却增加了焊球的底座,焊球仍然不能做的太大。
发明内容
本发明克服了现有技术的不足,提供一种键合工艺制作大锡球的方法。
本发明的技术方案如下:
一种键合工艺制作大锡球的方法,具体包括如下步骤:
101)预处理步骤:基础载板上表面通过物理溅射,磁控溅射或者蒸镀工艺制作种子层;在种子层上方制作第一光刻胶,第一光刻胶厚度范围在1um到100um,其制作方式采用旋涂工艺或喷涂工艺;在第一光刻胶层上通过曝光形成第一曝光区域;
在辅助载板上表面制作第二光刻胶,其制作方式、厚度与第一光刻胶相同;在第二光刻胶层上通过曝光形成第二曝光区域;
102)键合步骤:将基础载板上表面、辅助载板上表面进行键合,去除辅助载板,得到涂有第一光刻胶、第二光刻胶的基础载板;
103)电镀步骤:通过显影工艺处理基础载板,得到待电镀的基础载板;电镀金属沉积,金属采用钛、铜、铝、银、钯、金、铊、锡、镍中的一种或多种混合,金属沉积采用一层或多层结构;
104)大锡球制作步骤:通过湿法腐蚀或者干法刻蚀工艺去除第一光刻胶、第二光刻胶,再通过湿法腐蚀工艺去除种子层;对基础载板上表面涂布助焊剂,通过回流焊,清洗助焊剂得到大锡球。
进一步的,种子层厚度范围在1nm到100um,其本身结构为一层或多层结构,其材质采用钛、铜、铝、银、钯、金、铊、锡、镍中的一种或多种混合。
进一步的,在步骤101)中的辅助载板上表面先制作与基础载板相同的种子层,再在种子层上设置第二光刻胶。
进一步的,在步骤102)中的基础载板上表面、辅助载板上表面之间加设助粘层。
本发明相比现有技术优点在于:本发明通过键合工艺制作多层焊锡堆叠,可以获得更厚的可电镀光刻胶层,以此在较小的底座上获得较多的焊锡,回流得到大焊球。
附图说明
图1为本发明的基础载板设置种子层、第一光刻胶示意图;
图2为本发明的图1设置第一光刻胶层示意图;
图3为本发明的第一种辅助载板的示意图;
图4为本发明的图2、图3键合示意图;
图5为本发明的图4去除辅助载板示意图;
图6为本发明的待进行电镀金属的示意图;
图7为本发明的第二种辅助载板的示意图;
图8为本发明的图2进行第一曝光区域后与图7键合示意图;
图9为本发明的图8进行电镀金属的示意图;
图10为本发明的图9去除第一光刻胶、第二光刻胶示意图;
图11为本发明的图10去除种子层的示意图;
图12为本发明的示意图;
图13为本发明的基础载板、辅助载板键合前的另一种示意图;
图14为本发明的图13基础载板、辅助载板键合后的示意图;
图15为本发明的图14基础载板、去除辅助载板示意图。
图中标识:基础载板101、种子层102、第一光刻胶103、第一曝光区域104、辅助载板105、电镀金属106、大锡球107、第二曝光区域108。
具体实施方式
下面详细描述本发明的实施方式,其中自始至终相同或类似的标号表示相同或类似的元件或类似功能的元件。下面通过参考附图描述的实施方式是示例性的,仅用于解释本发明而不能作为对本发明的限制。
本技术领域技术人员可以理解的是,除非另外定义,这里使用的所有术语(包括技术术语和科技术语)具有与本发明所属领域中的普通技术人员的一般理解相同的意义。还应该理解的是,诸如通用字典中定义的那些术语应该被理解为具有与现有技术的上下文中的意义一致的意义,并且除非像这里一样的定义,不会用理想化或过于正式的含义来解释。
各实施方式中提到的有关于步骤的标号,仅仅是为了描述的方便,而没有实质上先后顺序的联系。各具体实施方式中的不同步骤,可以进行不同先后顺序的组合,实现本发明的发明目的。
下面结合附图和具体实施方式对本发明进一步说明。
实施例1:
如图1至图12所示,一种键合工艺制作大锡球107的方法,具体包括如下步骤:
101)预处理步骤:基础载板101上表面通过物理溅射,磁控溅射或者蒸镀工艺制作种子层102;在种子层102上方制作第一光刻胶103,第一光刻胶103厚度范围在1um到100um,其制作方式采用旋涂工艺或喷涂工艺。第一光刻胶103可以是正胶也可以是负胶。在第一光刻胶103层上通过曝光形成第一曝光区域104。种子层102厚度范围在1nm到100um,其可以是一层也可以是多层,金属材质可以是钛、铜、铝、银、钯、金、铊、锡、镍等。
在辅助载板105上表面制作第二光刻胶,其制作方式、厚度与第一光刻胶103相同;在第二光刻胶层上通过曝光形成第二曝光区域108。或者采用与基础载板101相同的结构,先在辅助载板105上设置种子层102,再在种子层102上设置第二光刻胶。
基础载板101、辅助载板105都采用4、6、8、12寸大小中的一种尺寸晶圆,厚度范围为200um到2000um,也可以是其他材质,包括玻璃,石英,碳化硅,氧化铝等无机材料,也可以是环氧树脂,聚氨酯等有机材料,其主要功能是提供支撑作用。
102)键合步骤:将基础载板101上表面、辅助载板105上表面进行键合,去除辅助载板105,得到涂有第一光刻胶103、第二光刻胶的基础载板101。其中,基础载板101上表面、辅助载板105上表面之间可以加设助粘层,提高粘黏性。
103)电镀步骤:通过显影工艺处理基础载板101,得到待电镀的基础载板101。电镀金属106沉积,金属采用钛、铜、铝、银、钯、金、铊、锡、镍中的一种或多种混合,金属沉积采用一层或多层结构。
104)大锡球制作步骤:通过湿法腐蚀或者干法刻蚀工艺去除第一光刻胶103、第二光刻胶,再通过湿法腐蚀工艺去除种子层102;对基础载板101上表面涂布助焊剂,通过回流焊,清洗助焊剂得到大锡球107。
实施例2:
其基本与实施例1相同,不同点在于,基础载板101、辅助载板105键合前分别进行电镀金属106,再进行键合,去除辅助载板105,最后通过步骤104)得到大锡球107。具体的如图12至图15所示,基础载板101、辅助载板105键合前,两者的制作方法相同,以其中一个进行电镀金属106为例:
在基础载板101上表面做种子层102,其中,种子层102通过物理溅射,磁控溅射或者蒸镀工艺在基础载板101上表面制作,种子层102厚度范围在1nm到100um,其本身结构可以是一层也可以是多层,金属材质可以是钛、铜、铝、银、钯、金、铊、锡、镍等中的一种或多种混合。
在种子层102上方制作第一光刻胶103,第一光刻胶103可以是正胶也可以是负胶,第一光刻胶103厚度范围在1um到100um;制作方式可以用旋涂工艺,也可以用喷涂工艺。
对第一光刻胶103进行曝光显影工艺露出种子层102;再通过电镀焊锡,去除光刻胶得到预处理后的基础载板101。
辅助载板105制作过程与基础载板101相同。
以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员,在不脱离本发明构思的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明保护范围内。
Claims (4)
1.一种键合工艺制作大锡球的方法,其特征在于:具体包括如下步骤:
101)预处理步骤:基础载板上表面通过物理溅射,磁控溅射或者蒸镀工艺制作种子层;在种子层上方制作第一光刻胶,第一光刻胶厚度范围在1um到100um,其制作方式采用旋涂工艺或喷涂工艺;在第一光刻胶层上通过曝光形成第一曝光区域;
在辅助载板上表面制作第二光刻胶,其制作方式、厚度与第一光刻胶相同;在第二光刻胶层上通过曝光形成第二曝光区域;
102)键合步骤:将基础载板上表面、辅助载板上表面进行键合,去除辅助载板,得到涂有第一光刻胶、第二光刻胶的基础载板;
103)电镀步骤:通过显影工艺处理基础载板,得到待电镀的基础载板;电镀金属沉积,金属采用钛、铜、铝、银、钯、金、铊、锡、镍中的一种或多种混合,金属沉积采用一层或多层结构;
104)大锡球制作步骤:通过湿法腐蚀或者干法刻蚀工艺去除第一光刻胶、第二光刻胶,再通过湿法腐蚀工艺去除种子层;对基础载板上表面涂布助焊剂,通过回流焊,清洗助焊剂得到大锡球。
2.根据权利要求1所述的一种键合工艺制作大锡球的方法,其特征在于:种子层厚度范围在1nm到100um,其本身结构为一层或多层结构,其材质采用钛、铜、铝、银、钯、金、铊、锡、镍中的一种或多种混合。
3.根据权利要求1所述的一种键合工艺制作大锡球的方法,其特征在于:在步骤101)中的辅助载板上表面先制作与基础载板相同的种子层,再在种子层上设置第二光刻胶。
4.根据权利要求1所述的一种键合工艺制作大锡球的方法,其特征在于:在步骤102)中的基础载板上表面、辅助载板上表面之间加设助粘层。
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