CN111690962A - 一种基于电镀工艺制作大焊锡球的方法 - Google Patents
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Abstract
本发明公开了一种基于电镀工艺制作大焊锡球的方法，具体包括如下步骤：101)初步处理步骤、102)二次处理步骤、103)焊锡步骤；本发明提供制作方便、处理便捷的一种基于电镀工艺制作大焊锡球的方法。
Description
技术领域
本发明涉及半导体技术领域，更具体的说，它涉及一种基于电镀工艺制作大焊锡球的方法。
背景技术
晶圆级封装技术是先进封装领域用的最广的一种技术，尤其是对于消费类产品，晶圆级封装以其尺寸小，重量轻，厚度薄等优点，被广泛应用于移动电子设备，微型功能设备上。
晶圆级封装对外焊接互联一般用焊锡球或者金属凸点，焊锡球的制作工艺包括直接植球，用焊锡膏制作焊球以及电镀工艺制作焊球，凸点则包括种植金属柱和电镀凸点两种。但是在电镀制作焊锡球的工艺中，电镀锡的高度会受到光刻胶层的厚度影响，如果要制作较大的焊球，则需要电镀非常厚的焊锡，现在的光刻涂胶工艺一般很难做到。如果增加电镀面积，则可以增加电镀锡的量，但会需要通过增加焊球的底座实现，焊球仍然不能做的太大。
发明内容
本发明克服了现有技术的不足，提供制作方便、处理便捷的一种基于电镀工艺制作大焊锡球的方法。
本发明的技术方案如下：
一种基于电镀工艺制作大焊锡球的方法，具体包括如下步骤：
101)初步处理步骤：在晶圆上表面通过物理溅射，磁控溅射或者蒸镀工艺制作种子层；在种子层上涂布光刻胶，通过显影曝光技术露出电镀区域，并去除种子层，电镀焊盘；
102)二次处理步骤：在晶圆上表面继续通过物理溅射，磁控溅射或者蒸镀工艺制作金属为材质的种子层，或通过涂布和表面喷胶的方式制作导电有机物为材料的种子层，进行种子层加厚；在加厚后的种子层上涂布光刻胶，通过显影曝光技术露出电镀区域；
103)焊锡步骤：在步骤101)的电镀区域上电镀焊锡，并填满电镀区域；通过显影曝光技术去除光刻胶，再通过湿法腐蚀或干法刻蚀工艺去除种子层；然后通过加热的方式将焊锡下方的种子层熔融到焊锡中，继续回流得到大焊锡球；或者在去除光刻胶后，通过加热的方式将焊锡下方的种子层熔融到焊锡中形成大锡球，再去除种子层。
进一步的，种子层厚度范围在1nm到100um之间，其本身结构为一层或多层结构，每层的金属材质采用钛、铜、铝、银、钯、金、铊、锡、镍中的一种或多种混合。
进一步的，通过干法刻蚀或者湿法腐蚀的工艺去除步骤102)中露出的种子层；在避开电镀区域涂布光刻胶，进行步骤103)处理。
本发明相比现有技术优点在于：本发明通过利用一种新的材质做种子层，通过电镀后的热处理，使种子层能够跟焊锡融为一体，减小了回流焊球的的底座，这样焊锡在后续的回流过程中可以直接在固定焊盘上形成较大的焊球。
附图说明
图1为本发明的晶圆示意图；
图2为本发明的图1上制作种子层示意图；
图3为本发明的图2上制作光刻胶并显示电镀区域的示意图；
图4为本发明的图3上制作电镀焊锡的示意图；
图5为本发明的图4上去除光刻胶的示意图；
图6为本发明的图5上去除种子层的示意图；
图7为本发明的图5种子层熔融到焊锡中的示意图；
图8为本发明的图7去除种子层的示意图；
图9为本发明的大焊锡球的示意图；
图10为本发明的初步处理后的示意图；
图11为本发明的图10去除部分种子层的示意图；
图12为本发明的图11去除露出的种子层的示意图；
图13为本发明的图12上涂布光刻胶露出电镀区域的示意图；
图14为本发明的图13上电镀焊锡的示意图；
图15为本发明的图14上去除光刻胶的示意图；
图16为本发明的图15上形成焊锡球的示意图。
图中标识：晶圆101、种子层102、光刻胶103、焊锡104、大锡球105。
具体实施方式
下面结合附图和具体实施方式对本发明进一步说明。
如图1至图16所示，一种基于电镀工艺制作大焊锡104球的方法，具体包括如下步骤：
101)初步处理步骤：在晶圆101上表面通过物理溅射，磁控溅射或者蒸镀工艺制作种子层102，种子层102厚度范围在1nm到100um之间，其本身结构为一层或多层结构，每层的金属材质采用钛、铜、铝、银、钯、金、铊、锡、镍等中的一种或多种混合。在种子层102上涂布光刻胶103，通过显影曝光技术露出电镀区域，并去除种子层102，电镀焊盘；焊盘的金属厚度范围在1nm到100um，其本身结构可以是一层也可以是多层，每层金属的材质可以是钛、铜、铝、银、钯、金、铊、锡、镍等中的一种或多种混合。
102)二次处理步骤：在晶圆101上表面继续通过物理溅射，磁控溅射或者蒸镀工艺制作金属为材质的种子层102，或通过涂布和表面喷胶的方式制作导电有机物为材料的种子层102，进行种子层102加厚，增加的种子层102厚度范围在1nm到100um之间。在加厚后的种子层102上涂布光刻胶103，通过显影曝光技术露出电镀区域；
103)焊锡104步骤：在步骤101)的电镀区域上电镀焊锡104，并填满电镀区域；通过显影曝光技术去除光刻胶103，再通过湿法腐蚀或干法刻蚀工艺去除种子层102；然后通过加热的方式将焊锡104下方的种子层102熔融到焊锡104中，继续回流得到大焊锡104球；或者在去除光刻胶103后，通过加热的方式将焊锡104下方的种子层102熔融到焊锡104中形成大锡球105，再去除种子层102。
作为优选，图9至图16所示，通过干法刻蚀或者湿法腐蚀的工艺去除步骤102)中露出的种子层102；在避开电镀区域涂布光刻胶103，进行步骤103)处理。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明构思的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明保护范围内。
Claims (3)
1.一种基于电镀工艺制作大焊锡球的方法，其特征在于，具体包括如下步骤：
101)初步处理步骤：在晶圆上表面通过物理溅射，磁控溅射或者蒸镀工艺制作种子层；在种子层上涂布光刻胶，通过显影曝光技术露出电镀区域，并去除种子层，电镀焊盘；
102)二次处理步骤：在晶圆上表面继续通过物理溅射，磁控溅射或者蒸镀工艺制作金属为材质的种子层，或通过涂布和表面喷胶的方式制作导电有机物为材料的种子层，进行种子层加厚；在加厚后的种子层上涂布光刻胶，通过显影曝光技术露出电镀区域；
103)焊锡步骤：在步骤101)的电镀区域上电镀焊锡，并填满电镀区域；通过显影曝光技术去除光刻胶，再通过湿法腐蚀或干法刻蚀工艺去除种子层；然后通过加热的方式将焊锡下方的种子层熔融到焊锡中，继续回流得到大焊锡球；或者在去除光刻胶后，通过加热的方式将焊锡下方的种子层熔融到焊锡中形成大锡球，再去除种子层。
2.根据权利要求1所述的一种基于电镀工艺制作大焊锡球的方法，其特征在于，种子层厚度范围在1nm到100um之间，其本身结构为一层或多层结构，每层的金属材质采用钛、铜、铝、银、钯、金、铊、锡、镍中的一种或多种混合。
3.根据权利要求1所述的一种基于电镀工艺制作大焊锡球的方法，其特征在于，通过干法刻蚀或者湿法腐蚀的工艺去除步骤102)中露出的种子层；在避开电镀区域涂布光刻胶，进行步骤103)处理。
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Citations (5)
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| CN101026106A (zh) * | 2006-02-24 | 2007-08-29 | 中芯国际集成电路制造(上海)有限公司 | 焊料凸点的无助焊剂制作工艺 |
| CN101847592A (zh) * | 2010-04-09 | 2010-09-29 | 中国科学院上海微系统与信息技术研究所 | 一种基于电镀工艺制备铟焊球阵列方法 |
| CN110676175A (zh) * | 2019-09-24 | 2020-01-10 | 浙江集迈科微电子有限公司 | 一种键合工艺制作大锡球的方法 |
| CN110707013A (zh) * | 2019-09-24 | 2020-01-17 | 浙江集迈科微电子有限公司 | 一种电镀法制作大锡球方法 |
| CN110739237A (zh) * | 2019-09-27 | 2020-01-31 | 浙江大学 | 一种新型电镀法制作大锡球方法 |
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| CN101026106A (zh) * | 2006-02-24 | 2007-08-29 | 中芯国际集成电路制造(上海)有限公司 | 焊料凸点的无助焊剂制作工艺 |
| CN101847592A (zh) * | 2010-04-09 | 2010-09-29 | 中国科学院上海微系统与信息技术研究所 | 一种基于电镀工艺制备铟焊球阵列方法 |
| CN110676175A (zh) * | 2019-09-24 | 2020-01-10 | 浙江集迈科微电子有限公司 | 一种键合工艺制作大锡球的方法 |
| CN110707013A (zh) * | 2019-09-24 | 2020-01-17 | 浙江集迈科微电子有限公司 | 一种电镀法制作大锡球方法 |
| CN110739237A (zh) * | 2019-09-27 | 2020-01-31 | 浙江大学 | 一种新型电镀法制作大锡球方法 |
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Application publication date: 20200922 |