CN110660650A - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
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- CN110660650A CN110660650A CN201910043381.4A CN201910043381A CN110660650A CN 110660650 A CN110660650 A CN 110660650A CN 201910043381 A CN201910043381 A CN 201910043381A CN 110660650 A CN110660650 A CN 110660650A
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- photoresist
- semiconductor device
- layer
- encapsulant
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- 238000011161 development Methods 0.000 claims abstract description 16
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Images
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Abstract
提供了半导体器件和制造导电连接件的方法。在实施例中,通过在曝光工艺期间调整对焦区域的中心点,在光刻胶内形成开口。一旦已经显影光刻胶以形成开口,显影后烘烤工艺用于重塑开口。一旦重塑,在开口内形成导电材料以呈现开口的形状。本发明的实施例还涉及半导体器件及其制造方法。
Description
技术领域
本发明的实施例涉及半导体器件及其制造方法。
背景技术
由于各种电子组件(例如,晶体管、二极管、电阻器、电容器等)的集成密度的不断提高,半导体工业经历了快速增长。在大多数情况下,集成密度的这种改进来自最小部件尺寸的反复减小(例如,将半导体工艺节点缩小到亚20nm节点),这允许更多组件被集成到给定区域中。随着近年来对小型化、更高速度和更高带宽以及更低功耗和延迟的需求的增长,对半导体管芯的更小且更具创造性的封装技术的需求不断增长。
随着半导体技术的进一步发展,堆叠和接合的半导体器件已成为进一步减小半导体器件的物理尺寸的有效替代方案。在堆叠半导体器件中,诸如逻辑、存储器、处理器电路等的有源电路至少部分地制造在单独的衬底上,然后物理地和电气地接合在一起以形成功能器件。这种接合工艺利用复杂的技术,并且需要改进。
发明内容
本发明的实施例提供了一种制造半导体器件的方法,所述方法包括:在晶种层上施加光刻胶;将所述光刻胶暴露于图案化的能量源,所述图案化的能量源具有带有中心点的对焦区域,所述中心点位于所述光刻胶的面向所述晶种层的表面下方;使所述光刻胶显影以形成开口;以及将外部连接件镀到所述开口中。
本发明的另一实施例提供了一种制造半导体器件的方法,所述方法包括:将光刻胶暴露于图案化的能量源,所述光刻胶位于半导体管芯和密封剂通孔之间的密封剂上;使所述光刻胶显影以形成具有第一形状的开口;实施显影后烘烤工艺以将所述开口重塑为与所述第一形状不同的第二形状,其中,所述第二形状包括靠近所述开口的底部的喇叭口;以及将导电材料镀到所述开口中。
本发明的又一实施例提供了一种半导体器件,包括:半导体管芯;密封剂,密封所述半导体管芯;密封剂通孔,从所述密封剂的第一侧延伸到所述密封剂的第二侧;钝化层,位于所述密封剂上方;以及外部连接件,位于所述密封剂上方,所述外部连接件包括:第一部分,具有第一宽度,所述第一部分延伸穿过所述钝化层;第二部分,具有大于所述第一宽度的第二宽度,所述第二部分位于所述钝化层的外部;和锥形部分,从所述第二部分延伸到所述第一部分。
附图说明
当结合附图进行阅读时,从以下详细描述可最佳理解本发明的各个方面。应该强调,根据工业中的标准实践,各个部件未按比例绘制并且仅用于说明的目的。实际上,为了清楚的讨论,各个部件的尺寸可以任意地增大或减小。
图1示出了根据一些实施例的中介层通孔的形成。
图2示出了根据一些实施例的半导体器件。
图3示出了根据一些实施例的半导体器件的放置。
图4示出了根据一些实施例的中介层通孔和半导体器件的密封。
图5示出了根据一些实施例的光刻胶的放置。
图6A至图6D示出了根据一些实施例的光刻胶的曝光。
图7A至图7B示出了根据一些实施例的光刻胶的显影。
图8示出了根据一些实施例的显影后退火工艺。
图9示出了根据一些实施例的外部连接件的形成。
图10示出了根据一些实施例的晶种层的图案化。
图11示出了根据一些实施例的外部连接件上的导电凸块的形成。
图12示出了根据一些实施例的载体晶圆的脱粘。
图13示出了根据一些实施例的第二封装件的接合。
图14示出了根据一些实施例的分割。
具体实施方式
以下公开内容提供了许多用于实现本发明的不同特征不同的实施例或实例。下面描述了组件和布置的具体实施例或实例以简化本发明。当然这些仅是实例而不旨在限制。例如,元件的尺寸不限于所公开的范围或值,但可能依赖于工艺条件和/或器件所需的性能。此外,在以下描述中,在第二部件上方或者上形成第一部件可以包括第一部件和第二部件直接接触形成的实施例,并且也可以包括在第一部件和第二部件之间可以形成额外的部件,从而使得第一部件和第二部件可以不直接接触的实施例。为了简单和清楚的目的,各个部件可以以不同的比例任意地绘制。
此外,为了便于描述,本文中可以使用诸如“在…下方”、“在…下面”、“下部”、“在…上面”、“上部”等的空间关系术语,以描述如图中所示的一个元件或部件与另一元件或部件的关系。除了图中所示的方位外,空间关系术语旨在包括器件在使用或操作工艺中的不同方位。装置可以以其它方式定位(旋转90度或在其它方位),并且在本文中使用的空间关系描述符可以同样地作相应地解释。
现在参考图1,示出了载体衬底101,粘合层103、聚合物层105和第一晶种层107位于载体衬底101上方。例如,载体衬底101包括硅基材料(例如玻璃或氧化硅)或其他材料(例如氧化铝)、这些材料中的任何材料的组合等。载体衬底101是平坦的,以便适应半导体器件的附接,例如第一半导体器件201和第二半导体器件301(图1中未示出,但在下面参照图2至图3示出和讨论)。
粘合层103放置在载体衬底101上,以有助于上面的结构(例如,聚合物层105)的粘附。在一个实施例中,粘合层103可以包括紫外线胶,当暴露于紫外光时其失去粘合性。然而,也可以使用其他类型的粘合剂,例如压敏粘合剂、可辐射固化的粘合剂、环氧树脂、这些的组合等。粘合层103可以半液体或凝胶形式放置在载体衬底101上,其在压力下易于变形。
聚合物层105放置在粘合层103上,并且一旦附接第一半导体器件201和第二半导体器件301,聚合物层105用于为例如第一半导体器件201和第二半导体器件301提供保护。在一个实施例中,聚合物层105可以是聚苯并恶唑(PBO),但是可以使用任何合适的材料,例如聚酰亚胺或聚酰亚胺衍生物、阻焊剂(SR)或味之素积层膜(ABF)。可以使用例如旋涂工艺将聚合物层105放置到约2μm和约15μm之间的厚度,例如约5μm,但是可以使用任何合适的方法和厚度。
在聚合物层105上形成第一晶种层107。在一个实施例中,第一晶种层107是导电材料的薄层,其有助于在随后的处理步骤期间形成较厚的层。第一晶种层107可以包括约厚的钛层,接着是约厚的铜层。可以使用诸如溅射、蒸发或PECVD工艺的工艺来产生第一晶种层107,这取决于期望的材料。第一晶种层107可以形成为具有介于约0.3μm和约1μm之间的厚度,例如约0.5μm。
图1还示出了在第一晶种层107上方的光刻胶109的放置和图案化。在一个实施例中,可以使用例如旋涂技术将光刻胶109放置在第一晶种层107上至约50μm和约250μm之间的高度,例如约120μm。一旦就位,然后可以通过将光刻胶109暴露于图案化的能量源(例如,图案化的光源)来图案化光刻胶109,以便引起化学反应,从而引起光刻胶109的暴露于图案化的光源的那些部分的物理变化。然后将显影剂施加到曝光的光刻胶109上,以利用物理变化并根据所需图案选择性地去除光刻胶109的曝光部分或光刻胶109的未曝光部分。
在一个实施例中,形成在光刻胶109中的图案是用于通孔111的图案。通孔111形成为位于随后附接的器件(例如第一半导体器件201和第二半导体器件301)的不同侧上的位置。然而,可以利用用于通孔111的图案的任何合适的布置,例如通过定位使得第一半导体器件201和第二半导体器件301放置在通孔111的相对侧上。
在一个实施例中,通孔111形成在光刻胶109内。在一个实施例中,通孔111包括一种或多种导电材料,例如铜、钨、其他导电金属等,并且可以例如通过电镀、化学镀等形成。在一个实施例中,使用电镀工艺,其中将第一晶种层107和光刻胶109浸没或浸入电镀溶液中。第一晶种层107表面电连接到外部DC电源的负极侧,使得第一晶种层107在电镀工艺中用作阴极。固体导电阳极(例如铜阳极)也浸入溶液中并附接至电源的正极侧。来自阳极的原子溶解在溶液中,阴极(例如第一晶种层107)从该溶液中获得溶解的原子,从而在光刻胶109的开口内镀第一晶种层107的暴露的导电区域。
一旦使用光刻胶109和第一晶种层107形成通孔111,就可以使用合适的去除工艺去除光刻胶109(图1中未示出,但在下面的图3中看到)。在一个实施例中,可以使用等离子体灰化工艺来去除光刻胶109,由此可以增加光刻胶109的温度,直到光刻胶109经历热分解并且可以被去除。然而,可以使用任何其他合适的工艺,例如湿剥离。去除光刻胶109可以暴露下面的第一晶种层107的部分。
一旦暴露,可以实施第一晶种层107的暴露部分的去除(图1中未示出,但在下面的图3中看到)。在一个实施例中,第一晶种层107的暴露部分(例如,未被通孔111覆盖的那些部分)可以通过例如湿或干蚀刻工艺去除。例如,在干蚀刻工艺中,可以使用通孔111作为掩模,将反应物引向第一晶种层107。在另一个实施例中,可以喷射蚀刻剂或以其他方式使蚀刻剂与第一晶种层107接触,以去除第一晶种层107的暴露部分。在第一晶种层107的暴露部分被蚀刻掉之后,聚合物层105的一部分暴露于通孔111之间。
图2示出了第一半导体器件201,其将附接到通孔111内的聚合物层105(图2中未示出,但在下面参照图3示出和描述)。在一个实施例中,第一半导体器件201包括第一衬底203、第一有源器件(未单独示出)、第一金属化层205、第一接触焊盘207、第一钝化层211和第一外部连接件209。第一衬底203可以包括掺杂或未掺杂的体硅或绝缘体上硅(SOI)衬底的有源层。通常,SOI衬底包括半导体材料层,例如硅、锗、硅锗、SOI、绝缘体上硅锗(SGOI)或它们的组合。可以使用的其他衬底包括多层衬底、梯度衬底或混合取向衬底。
第一有源器件包括各种有源器件和无源器件,例如电容器、电阻器、电感器等,其可用于产生第一半导体器件201的设计的所需结构和功能需求。可以使用任何合适的方法在第一衬底203内或在第一衬底203上形成第一有源器件。
第一金属化层205形成在第一衬底203和第一有源器件上方,并被设计为连接各种有源器件以形成功能电路。在一个实施例中,第一金属化层205由电介质和导电材料的交替层形成,并且可以通过任何合适的工艺(例如沉积、镶嵌、双镶嵌等)形成。在一个实施例中,可以存在通过至少一个层间介电层(ILD)与第一衬底203分离的四层金属化层,但是第一金属化层205的精确数量取决于第一半导体器件201的设计。
第一接触焊盘207可以形成在第一金属化层205之上并与第一金属化层205电接触。第一接触焊盘207可以包括铝,但是可以使用其他材料,例如铜。可以使用诸如溅射的沉积工艺以形成材料层(未示出),然后可以通过合适的工艺(例如光刻掩模和蚀刻)去除部分材料层来形成第一接触焊盘207。然而,可以利用任何其他合适的工艺来形成第一接触焊盘207。第一接触焊盘207可以形成为具有在约0.5μm和约4μm之间的厚度,例如约1.45μm。
可以在第一金属化层205和第一接触焊盘207上方的第一衬底203上形成第一钝化层211。第一钝化层211可以由一种或多种合适的介电材料制成,例如氧化硅、氮化硅、低k电介质(例如碳掺杂的氧化物)、极低k电介质(例如多孔碳掺杂的二氧化硅)、它们的组合等。第一钝化层211可以通过诸如化学气相沉积(CVD)的工艺形成,但是可以使用任何合适的工艺,并且可以具有在约0.5μm和约5μm之间的厚度,例如约
第一外部连接件209可以形成为提供导电区域,用于第一接触焊盘207和例如第一再分布层501(图2中未示出,但是下面参照图5示出和描述)之间的接触。在一个实施例中,第一外部连接件209可以是导电柱,并且可以通过在第一钝化层211上初始形成光刻胶(未示出)至约5μm至约20μm之间的厚度(例如约10μm)来形成。可以图案化光刻胶以暴露第一钝化层的部分,导电柱将延伸穿过该部分。一旦被图案化,然后可以将光刻胶用作掩模以去除第一钝化层211的期望部分,从而暴露下面的第一接触焊盘207的将与第一外部连接件209接触的那些部分。
第一外部连接件209可以形成在第一钝化层211和光刻胶两者的开口内。第一外部连接件209可以由诸如铜的导电材料形成,但是也可以使用诸如镍、金或金属合金的其他导电材料、这些的组合等。另外,第一外部连接件209可以使用诸如电镀的工艺形成,通过该工艺,电流流过期望形成第一外部连接件209的第一接触焊盘207的导电部分,并且第一接触焊盘207浸入溶液中。溶液和电流将例如铜沉积在开口内,以填充和/或过填充光刻胶和第一钝化层211的开口,从而形成第一外部连接件209。然后,可以使用例如灰化工艺、化学机械抛光(CMP)工艺、这些的组合等来去除位于第一钝化层211的开口外部的过量的导电材料和光刻胶。
然而,如本领域普通技术人员将认识到的,形成第一外部连接件209的上述工艺仅仅是一个这样的描述,并不意味着将实施例限制于该精确工艺。相反,所描述的工艺仅仅是说明性的,因为可以使用用于形成第一外部连接件209的任何合适的工艺。所有合适的工艺完全旨在包括在本发明实施例的范围内。
在第一衬底203的与第一金属化层205相对的一侧上,可以形成管芯附接膜(DAF)213,以帮助将第一半导体器件201附接到聚合物层105。在一个实施例中,管芯附接膜213是环氧树脂、酚醛树脂、丙烯酸橡胶、二氧化硅填料或它们的组合,并且使用层压技术施加。然而,可以使用任何其他合适的材料和形成方法。
图3示出了第一半导体器件201以及第二半导体器件301放置在聚合物层105上。在一个实施例中,第二半导体器件301可以包括第二衬底303、第二有源器件(未单独示出)、第二金属化层305、第二接触焊盘307、第二钝化层311和第二外部连接件309。在一个实施例中,第二衬底303、第二有源器件、第二金属化层305、第二接触焊盘307、第二钝化层311和第二外部连接件309可以类似于第一衬底203、第一有源器件、第一金属化层205、第一接触焊盘207、第一钝化层211和第一外部连接件209,但是它们也可以不同。
在一个实施例中,可以使用例如拾取和放置工艺将第一半导体器件201和第二半导体器件301放置在聚合物层105上。然而,可以使用放置第一半导体器件201和第二半导体器件301的任何其他方法。
图4示出了通孔111、第一半导体器件201和第二半导体器件301的密封。密封可以在模塑装置(图4中未单独示出)中进行,模塑装置可以包括顶部模制部分和与顶部模制部分分离的底部模制部分。当顶部模制部分降低到与底部模制部分相邻时,可以形成用于载体衬底101、通孔111、第一半导体器件201和第二半导体器件301的模制腔。
在密封工艺期间,顶部模制部分可以邻近底部模制部分放置,从而将载体衬底101、通孔111、第一半导体器件201和第二半导体器件301封闭在模制腔内。一旦封闭,顶部模制部分和底部模制部分可以形成气密密封,以便控制模制腔的气体的流入和流出。一旦密封,密封剂401可以放置在模制腔内。密封剂401可以是模塑料树脂,例如聚酰亚胺、PPS、PEEK、PES、耐热晶体树脂、它们的组合等。密封剂401可以在顶部模制部分和底部模制部分对准之前放置在模制腔内,或者可以通过注入口注入模制腔中。
一旦将密封剂401放入模制腔中使得密封剂401密封载体衬底101、通孔111、第一半导体器件201和第二半导体器件301,可以固化密封剂401以使密封剂401硬化以获得最佳保护。虽然精确的固化工艺至少部分地取决于为密封剂401选择的特定材料,但是在选择模塑料作为密封剂401的实施例中,固化可以通过诸如将密封剂401加热到介于约100℃和约130℃之间(例如约125℃)的工艺来进行约60秒至约3000秒,例如约600秒。另外,引发剂和/或催化剂可以包含在密封剂401内,以更好地控制固化工艺。
然而,如本领域普通技术人员将认识到的,上述固化工艺仅仅是示例性工艺,并不意味着限制当前实施例。可以使用其他固化工艺,例如辐射或甚至允许密封剂401在环境温度下硬化。可以使用任何合适的固化工艺,并且所有这些工艺完全旨在包括在本文讨论的实施例的范围内。
图4还示出了密封剂401的减薄,以暴露通孔111、第一半导体器件201和第二半导体器件301以进行进一步处理。可以例如使用机械研磨或化学机械抛光(CMP)工艺来实施减薄,由此利用化学蚀刻剂和研磨剂来使密封剂401、第一半导体器件201和第二半导体器件301进行反应并且研磨密封剂401、第一半导体器件201和第二半导体器件301,直到暴露通孔111、第一外部连接件209(位于第一半导体器件201上)和第二外部连接件309(位于第二半导体器件301上)。这样,第一半导体器件201、第二半导体器件301和通孔111可以具有平坦表面,该平坦表面也与密封剂401共面。
然而,尽管上述CMP工艺呈现为一个说明性实施例,但是并不旨在限制实施例。可以使用任何其他合适的去除工艺来减薄密封剂401、第一半导体器件201和第二半导体器件301并暴露通孔111。例如,可以使用一系列化学蚀刻。可以利用该工艺和任何其他合适的工艺来减薄密封剂401、第一半导体器件201和第二半导体器件301,并且所有这些工艺完全旨在包括在实施例的范围内。
可选地,在减薄密封剂401之后,通孔111、第一外部连接件209和第二外部连接件309可以凹入密封剂401内。在一个实施例中,通孔111、第一外部连接件209和第二外部连接件309可以使用例如蚀刻工艺凹陷,该蚀刻工艺利用对通孔111、第一外部连接件209和第二外部连接件309的材料(例如,铜)具有选择性的蚀刻剂。通孔111、第一外部连接件209和第二外部连接件309可以凹陷到约20μm和约300μm之间的深度,例如约180μm。
图5示出了第一再分布层(RDL)501、第二再分布层505和第三再分布层509的形成的截面图,以互连第一半导体器件201、第二半导体器件301和通孔111。在一个实施例中,可以通过最初通过合适的形成工艺(例如CVD或溅射)形成钛铜合金的晶种层(未示出)来形成第一再分布层501。然后可以形成光刻胶(也未示出)以覆盖晶种层,然后可以图案化光刻胶以暴露晶种层的期望定位第一再分布层501的那些部分。
一旦形成并图案化光刻胶,就可以通过诸如镀的沉积工艺在晶种层上形成诸如铜的导电材料。导电材料可以形成为具有介于约1μm和约10μm之间的厚度,例如约5μm。然而,虽然所讨论的材料和方法适合于形成导电材料,但这些材料仅仅是示例性的。任何其他合适的材料(例如AlCu或Au)以及任何其他合适的形成工艺(例如CVD或PVD)可用于形成第一再分布层501。
一旦形成导电材料,就可以通过合适的去除工艺(例如灰化)去除光刻胶。另外,在去除光刻胶之后,可以通过例如使用导电材料作为掩模的合适的蚀刻工艺来去除被光刻胶覆盖的晶种层的那些部分。
图5还示出了在第一再分布层501上方形成第三钝化层503,以便为第一再分布层501和其他下层结构提供保护和隔离。在一个实施例中,第三钝化层503可以是聚苯并恶唑(PBO),但是可以使用任何合适的材料,例如聚酰亚胺或聚酰亚胺衍生物。可以使用例如旋涂工艺将第三钝化层503放置到约5μm和约25μm之间的厚度,例如约7μm,但是可以使用任何合适的方法和厚度。
在形成第三钝化层503之后,通过去除第三钝化层503的部分以暴露下面的第一再分布层501的至少部分,可以制成穿过第三钝化层503的第一开口504(为清楚起见,图5中仅示出其中一个)。第一开口504允许第一再分布层501和第二再分布层505(下面进一步描述)之间的接触。可以使用合适的光刻掩模和蚀刻工艺来形成第一开口504,但是可以使用任何合适的工艺来暴露第一再分布层501的部分。
可以形成第二再分布层505以提供额外的布线和连接并且与第一再分布层501电连接。在一个实施例中,第二再分布层505可以与第一再分布层501类似地形成。例如,可以形成晶种层,可以在晶种层的顶部放置并图案化光刻胶,并且可以将导电材料电镀到穿过光刻胶的图案化的开口中。一旦形成,可以去除光刻胶,可以蚀刻下面的晶种层,第二再分布层505可以被第四钝化层507(其可以类似于第三钝化层503)覆盖,并且可以图案化第四钝化层507以形成第二开口506(为清楚起见,图5中仅示出其中一个)并暴露下面的第二再分布层505的导电部分。
可以形成第三再分布层509以提供额外的布线以及与第二再分布层505的电连接。在一个实施例中,第三再分布层509可以使用与第一再分布层501类似的材料和工艺形成。例如,可以形成晶种层,可以在晶种层的顶部上以第三再分布层509的所需图案放置并图案化光刻胶,将导电材料镀到光刻胶的图案化的开口中,去除光刻胶,并且蚀刻晶种层。
然而,除了简单地重新布线电连接(类似于第二再分布层505)之外,第三再分布层509还可以包括将用于形成到例如上面的第三外部连接件901(下面进一步描述)的电连接的接合焊盘。接合焊盘可以成形为与第三外部连接件901进行适当的物理和电连接。
一旦形成第三再分布层509,第三再分布层509可以被第五钝化层511覆盖。类似于第三钝化层503,第五钝化层511可以由诸如PBO的聚合物形成,或者可以由与第三钝化层503类似的材料(例如,聚酰亚胺或聚酰亚胺衍生物)形成。第五钝化层511可以形成为具有介于约2μm和约15μm之间的厚度,例如约5μm。
一旦在第三再分布层509上方就位,第五钝化层511可以与第三再分布层509平坦化。在一个实施例中,可以使用例如化学机械抛光工艺来实施平坦化,由此蚀刻剂和研磨剂与旋转压板一起使用,以化学和机械地去除第五钝化层511的部分,直到第五钝化层511与第三再分布层509共面。然而,可以使用任何合适的平坦化工艺,例如一系列的一个或多个蚀刻或机械研磨工艺。
在形成并平坦化第五钝化层511之后,可以在第五钝化层511和第三再分布层509上放置并图案化第六钝化层513。在一个实施例中,第六钝化层513可以是与第五钝化层511类似的材料(例如,PBO),并且可以图案化第六钝化层513,以暴露下面的第三再分布层509的部分。在一个实施例中,可以使用光刻掩模和蚀刻工艺来图案化第六钝化层513,由此,沉积并图案化光刻胶,然后在蚀刻工艺期间用作掩模,以便去除第六钝化层513的部分并暴露第三再分布层509的部分。然而,可以使用图案化第六钝化层513的任何合适的方法。
在形成并图案化第六钝化层513之后,在第六钝化层513上方沉积第二晶种层515。在一个实施例中,第二晶种层515是有助于在随后的处理步骤中形成更厚的层的导电材料的薄层。第二晶种层515可以包括约1000埃的钛层,接着是约5000埃厚的铜层。可以使用诸如溅射、蒸发或PECVD工艺的工艺来产生第二晶种层515,这取决于期望的材料。第二晶种层515可以形成为具有介于约0.3μm和约1μm之间的厚度,例如约0.5μm。
一旦沉积了第二晶种层515,就可以将光刻胶517放置在第二晶种层515上以准备形成第三外部连接件901。在一个实施例中,光刻胶517包括光刻胶聚合物树脂以及光刻胶溶剂中的一种或多种光活性化合物(PAC)。在一个实施例中,光刻胶聚合物树脂可包含烃结构(例如脂环烃结构),其含有一个或多个将分解的基团(例如,酸不稳定基团)或在与酸、碱或由PAC生成的自由基混合时以其他方式反应的一个或多个基团(如下面参考图6A进一步描述的)。在一个实施例中,烃结构包含形成光刻胶聚合物树脂的骨架主链的重复单元。该重复单元可包括丙烯酸酯、甲基丙烯酸酯、巴豆酸酯、乙烯基酯、马来酸二酯、富马酸二酯、衣康酸二酯、(甲基)丙烯腈、(甲基)丙烯酰胺、苯乙烯、乙烯基醚、这些的组合等。
可用于烃结构的重复单元的具体结构包括丙烯酸甲酯、丙烯酸乙酯、丙烯酸正丙酯、丙烯酸异丙酯、丙烯酸正丁酯、丙烯酸异丁酯、丙烯酸叔丁酯、丙烯酸正己酯、丙烯酸2-乙基己酯、丙烯酸乙酰氧基乙酯、丙烯酸苯酯、丙烯酸2-羟乙酯、丙烯酸2-甲氧基乙酯、丙烯酸2-乙氧基乙酯、丙烯酸2-(2-甲氧基乙氧基)乙酯、丙烯酸环己酯、丙烯酸苄酯、2-烷基-2-金刚烷基(甲基)丙烯酸酯或(1-金刚烷基)(甲基)丙烯酸二烷基酯、甲基丙烯酸甲酯、甲基丙烯酸乙酯、甲基丙烯酸正丙酯、甲基丙烯酸正丁酯、甲基丙烯酸异丁酯、甲基丙烯酸叔丁酯、甲基丙烯酸正己酯、2-甲基丙烯酸乙基己酯、甲基丙烯酸乙酰氧基乙酯、甲基丙烯酸苯酯、甲基丙烯酸2-羟乙酯、甲基丙烯酸2-甲氧基乙酯、甲基丙烯酸2-乙氧基乙酯、甲基丙烯酸2-(2-甲氧基乙氧基)乙酯、甲基丙烯酸环己酯、甲基丙烯酸苄酯、3-氯-2-羟丙基甲基酯丙烯酸酯、甲基丙烯酸3-乙酰氧基-2-羟丙酯、甲基丙烯酸3-氯乙酰氧基-2-羟丙酯、巴豆酸丁酯、巴豆酸己酯等。乙烯基酯的实例包括乙酸乙烯酯、丙酸乙烯酯、丁酸乙烯酯、甲氧基乙酸乙烯酯、苯甲酸乙烯酯、马来酸二甲酯、马来酸二乙酯、马来酸二丁酯、富马酸二甲酯、富马酸二乙酯、富马酸二丁酯、衣康酸二甲酯、衣康酸二乙酯、衣康酸二丁酯、丙烯酰胺、甲基丙烯酰胺、乙基丙烯酰胺、丙基丙烯酰胺、正丁基丙烯酰胺、叔丁基丙烯酰胺、环己基丙烯酰胺、2-甲氧基乙基丙烯酰胺、二甲基丙烯酰胺、二乙基丙烯酰胺、苯基丙烯酰胺、苄基丙烯酰胺、甲基丙烯酰胺、甲基甲基丙烯酰胺、乙基甲基丙烯酰胺、丙基甲基丙烯酰胺、正丁基甲基丙烯酰胺、叔丁基甲基丙烯酰胺、环己基甲基丙烯酰胺、2-甲氧基乙基甲基丙烯酰胺、二甲基甲基丙烯酰胺、二乙基甲基丙烯酰胺、苯基甲基丙烯酰胺、苄基甲基丙烯酰胺、甲基乙烯基醚、丁基乙烯基醚、己基乙烯基醚、甲氧基乙基乙烯基醚、二甲基氨基乙基乙烯基醚等。苯乙烯的实例包括苯乙烯、甲基苯乙烯、二甲基苯乙烯、三甲基苯乙烯、乙基苯乙烯、异丙基苯乙烯、丁基苯乙烯、甲氧基苯乙烯、丁氧基苯乙烯、乙酰氧基苯乙烯、氯苯乙烯、二氯苯乙烯、溴苯乙烯、苯甲酸乙烯基酯、α-甲基苯乙烯、马来酰亚胺、乙烯基吡啶、乙烯基吡咯烷酮、乙烯基咔唑、它们的组合等。
在一个实施例中,烃结构的重复单元也可以具有取代的单环或多环烃结构,或者单环或多环烃结构可以是重复单元,以形成脂环烃结构。可以使用的单环结构的具体实例包括双环烷烃、三环烷烃、四环烷烃、环戊烷、环己烷等。可以使用的多环结构的具体实例包括金刚烷、降冰片烷、异冰片烷、三环癸烷、四环十二烷等。
将分解的基团(也称为离去基团,或者在PAC是光酸产生剂的实施例中,酸不稳定基团)连接到烃结构上以使其与酸/碱/在曝光期间由PAC产生的自由基反应。在一个实施例中,将分解的基团可以是羧酸基团、氟化醇基团、酚醇基团、磺酸基团、磺酰胺基团、磺酰亚胺基团、(烷基磺酰基)(烷基羰基)亚甲基、(烷基磺酰基)(烷基羰基)亚氨基、双(烷基羰基)亚甲基、双(烷基羰基)亚氨基、双(烷基磺酰基)亚甲基、双(烷基磺酰基)亚氨基、三(烷基羰基亚甲基)、三(烷基磺酰基)亚甲基、它们的组合等。可用于氟化醇基的特定基团包括氟代羟基烷基,例如六氟异丙醇基。可用于羧酸基团的特定基团包括丙烯酸基团、甲基丙烯酸基团等。
在一个实施例中,光刻胶聚合物树脂还可以包含附接于烃结构的其他基团,其有助于改善可聚合树脂的各种性质。例如,在烃结构中包含内酯基团有助于在显影光刻胶517之后减少线边缘粗糙度的量,从而有助于减少显影期间发生的缺陷的数量。在一个实施例中,内酯基团可包括5-7员环,但任何合适的内酯结构可用于内酯基团。
光刻胶聚合物树脂还可以包括可以帮助增加光刻胶517与下层结构的粘合性的基团。在一个实施例中,极性基团可用于帮助增加粘合性,并且可用于该实施例的极性基团包括羟基、氰基等,但可使用任何合适的极性基团。
任选地,光刻胶聚合物树脂可进一步包括不含有将分解的基团的一种或多种脂环烃结构。在一个实施例中,不含有将分解的基团的烃结构可包括诸如1-金刚烷基(甲基)丙烯酸酯、三环癸基(甲基)丙烯酸酯、环己基(甲基丙烯酸酯)、这些的组合等的结构。
另外,光刻胶517还包含一种或多种PAC。PAC可以是光活性组分,例如光酸产生剂、光碱产生剂、自由基发生剂等,并且PAC可以是正作用的或负作用的。在PAC是光酸产生剂的实施例中,PAC可包括卤化三嗪、盐、重氮盐、芳族重氮盐、盐、锍盐、碘盐、酰亚胺磺酸盐、肟磺酸盐、重氮二砜、二砜、o-硝基苄基磺酸盐、磺化酯、卤代磺酰氧基二甲酰亚胺、重氮二砜、α-氰基氧基磺酸盐、酰亚胺磺酸盐、酮二氮砜、磺酰基二氮杂酯、1,2-二(芳基磺酰基)肼、硝基苄基酯和均三嗪衍生物、这些的合适组合等。
可以使用的光酸产生剂的具体实例包括α-(三氟甲基磺酰氧基)-双环[2.2.1]庚-5-烯-2,3-二碳酰亚胺(MDT)、N-羟基萘二甲酰亚胺(DDSN)、苯偶姻甲苯磺酸酯、叔丁基苯基α-(对甲苯磺酰氧基)-乙酸甲酯和叔丁基α-(对甲苯磺酰氧基)-乙酸甲酯、三芳基锍和二芳基碘六氟锑酸盐、六氟砷酸盐、三氟甲烷磺酸盐、碘全氟辛烷磺酸盐、N-樟脑磺酰氧基萘酰亚胺、N–五氟苯基磺酰氧基萘酰亚胺、离子碘磺酸盐如二芳基碘(烷基或芳基)磺酸酯和双(二-叔丁基苯基)碘龙脑磺酸盐、全氟烷基磺酸盐如全氟戊烷磺酸盐、全氟辛烷磺酸盐、全氟甲烷磺酸盐、芳基(例如,苯基或苄基)三苯基锍三氟甲磺酸酯,例如三氟甲磺酸酯或双-(叔丁基苯基)碘三氟甲磺酸酯;连苯三酚衍生物(例如,邻苯三酚的三甲)、羟基酰亚胺的三氟甲磺酸酯、α,α'-双-磺酰-重氮甲烷、硝基取代的苄基醇的磺酸酯、萘醌-4-二叠氮化物、烷基二砜等。
在其中PAC是自由基发生剂的实施例中,PAC可包含n-苯基甘氨酸、芳族酮(例如二苯甲酮)、N,N'-四甲基-4,4'-二氨基二苯甲酮、N,N'-四乙基-4,4'-二氨基二苯甲酮、4-甲氧基-4'-二甲基氨基苯甲酮、3,3'-二甲基-4-甲氧基二苯甲酮、p,p'-双(二甲基氨基)苯并苯酮、p,p'-双(二乙基氨基)苯甲酮、蒽醌、2-乙基蒽醌、萘醌和菲醌、苯偶姻,例如苯偶姻、苯偶姻甲基醚、苯偶姻乙基醚、苯偶姻丙基醚、苯偶姻-正丁醚、苯偶姻-苯基醚、甲基苯偶姻和乙基苯偶姻、苄基衍生物,如苄基、苄基二戊基二硫基和苄基二甲基啶、吖啶衍生物,如9-苯基吖啶和1,7-双(9-吖啶基)庚烷、噻吨酮,如2-氯噻吨酮、2-甲基噻吨酮、2,4-二乙基-2,4-二甲基噻吨酮和2-异丙基噻吨酮、苯乙酮,例如1,1-二氯苯乙酮、对叔丁基二氯-苯乙酮、2,2-二乙氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二氯-4-苯氧基苯乙酮、2,4,5-三芳基咪唑二聚体,如2-(邻氯苯基)-4,5-二苯基咪唑二聚体、2-(邻氯苯基)-4,5-二-间甲氧基苯基咪唑二聚体、2-(邻氟苯基)-4,5-二苯基咪唑二聚体、2-(邻甲氧基苯基)-4,5-二苯基咪唑二聚体、2-(对甲氧基苯基)-4,5-二苯基咪唑二聚体、2,4-二(对甲氧基苯基)-5-苯基咪唑二聚体、2-(2,4-二甲氧基苯基)-4,5-二苯基咪唑二聚体和2-(对甲基巯基苯基)-4,5-二苯基咪唑二聚体、这些的合适组合等。
在其中PAC是光碱产生剂的实施例中,PAC可包含季铵二硫代氨基甲酸酯、α氨基酮、含肟-氨基甲酸酯的分子,例如二苯并苯肟六亚甲基二脲、四钒氧硼酸铵盐和N-(2-硝基苄氧基羰基)环状胺、这些的合适组合等。然而,如本领域普通技术人员将认识到的,本文列出的化学化合物仅旨在作为PAC的说明性实例,并不旨在将实施例仅限于具体描述的那些PAC。而是,可以使用任何合适的PAC,并且所有这些PAC完全旨在包括在本实施例的范围内。
可以将光刻胶517的各个组分放入光刻胶溶剂中以帮助光刻胶517的混合和放置。为了有助于光刻胶517的混合和放置,至少部分地基于为光刻胶聚合物树脂以及PAC选择的材料选择光刻胶溶剂。特别地,选择光刻胶溶剂,使得光刻胶聚合物树脂和PAC可以均匀地溶解在光刻胶溶剂中并分配。
在一个实施例中,光刻胶溶剂可以是有机溶剂,并且可以包含任何合适的溶剂,例如酮、醇、多元醇、醚、二醇醚、环醚、芳烃、酯、丙酸酯、乳酸酯、乳酸酯、亚烷基酯、二醇单烷基醚、乳酸烷基酯、烷基烷氧基丙酸酯、环内酯、含有环的单酮化合物、碳酸亚烷基酯、烷基烷氧基乙酸酯、丙酮酸烷基酯、乳酸酯、乙二醇烷基醚乙酸酯、二乙二醇、丙二醇烷基醚乙酸酯、烷基二醇烷基酯醚酯、亚烷基二醇单烷基酯等。
可用作光刻胶517的光刻胶溶剂的材料的具体实例包括丙酮、甲醇、乙醇、甲苯、二甲苯、4-羟基-4-甲基-2-戊酮、四氢呋喃、甲基乙基酮、环己酮、甲基异戊基酮、2-庚酮、乙二醇、乙二醇单乙酸酯、乙二醇二甲醚、乙二醇二甲醚、乙二醇甲乙醚、乙二醇单醚醚、乙酸甲基乙酸酯、乙酸乙基溶纤剂、二甘醇、二乙二醇单乙酸酯、二乙二醇单甲醚、二乙二醇二乙醚、二乙二醇二甲醚、二乙二醇乙基甲基醚、二乙二醇单乙醚、二乙二醇单丁醚、2-羟基丙酸乙酯、2-羟基-2-甲基丙酸甲酯、2-羟基乙基-2-甲基丙酸酯、乙氧基乙酸乙酯、羟基乙酸乙酯、2-羟基-2-甲基丁酸甲酯、3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯、乙酸乙酯、乙酸丁酯、乳酸甲酯和乳酸乙酯、丙二醇、丙二醇单乙酸酯、丙二醇单乙醚乙酸酯、丙二醇单甲醚乙酸酯、丙二醇单丙醚甲酯乙酸酯、丙二醇单丁醚乙酸酯、丙二醇单丁醚乙酸酯、丙二醇单甲醚丙酸酯、丙二醇单乙醚丙酸酯、丙二醇乙醚乙酸酯、丙二醇乙醚乙酸酯、乙二醇单甲醚乙酸酯、乙二醇单乙醚乙酸酯、丙二醇单甲醚、丙二醇单乙醚、丙二醇单丙醚、丙二醇单丁醚、乙二醇单甲醚、乙二醇单乙醚、乳酸甲酯、乳酸乙酯、乳酸丙酯和乳酸丁酯、3-乙氧基丙酸乙酯、3-甲氧基丙酸甲酯、3-乙氧基丙酸甲酯和3-甲氧基丙酸乙酯、β-丙内酯、β-丁内酯、γ-丁内酯、α-甲基-γ-丁内酯、β-甲基-γ-丁内酯、γ-戊内酯、γ-己内酯、γ-辛内酯、α-羟基-γ-丁内酯、2-丁酮、3-甲基丁酮、频哪酮、2-戊酮、3-戊酮、4-甲基-2-戊酮、2-甲基-3-戊酮、4,4-二甲基-2-戊酮、2,4-二甲基-3-戊酮、2,2,4,4-四甲基-3-戊酮、2-己酮、3-己酮、5-甲基-3-己酮、2-庚酮、3-庚酮、4-庚酮、2-甲基-3-庚酮、5-甲基-3-庚酮、2,6-二甲基-4-庚酮、2-辛酮、3-辛酮、2-壬酮、3-壬酮、5-壬酮、2-癸酮、3-癸酮、4-癸酮、5-己烯-2-酮、3-戊烯-2-酮、环戊酮、2-甲基环戊酮、3-甲基环戊酮、2,2-二甲基环戊酮、2,4,4-三甲基环戊酮、环己酮、3-甲基环己酮、4-甲基环己酮、4-乙基环己酮、2,2-二甲基环己酮、2,6-二甲基环己酮、2,2,6-三甲基环己酮、环庚酮、2-甲基环庚酮、3-甲基环庚酮、碳酸亚甲酯、碳酸亚乙烯酯、碳酸亚乙酯、碳酸亚丁酯、乙酸-2-甲氧基乙酯、乙酸-2-乙氧基乙酯、乙酸-2-(2-乙氧基乙氧基)乙酯、乙酸-3-甲氧基-3-甲基丁酯、乙酸-1-甲氧基-2-丙基、二丙二醇、单甲醚单乙醚、单丙醚、单丁醚、单乙醚、二丙二醇单乙酸酯、二恶烷、乳酸甲酯、乳酸乙酯、乙酸甲酯、乙酸乙酯、乙酸丁酯、纯化甲基丙酯、丙酮酸乙酯、丙酮酸丙酯、甲氧基丙酸甲酯、乙氧基丙酸乙酯、N-甲基吡咯烷酮(NMP)、2-甲氧基乙基醚(二甘醇二甲醚)、乙二醇单乙醚、丙二醇单甲醚;乳酸乙酯或乳酸甲酯、丙酮酸甲酯、丙酮酸乙酯和乙氧基丙酸乙酯、甲乙酮、环己酮、2-庚酮、二氧化碳、环戊酮、环己酮、3-乙基丙酸乙酯、乳酸乙酯、丙二醇甲醚乙酸酯(PGMEA)、亚甲基溶纤剂、乙酸丁酯、2-乙氧基乙醇、N-甲基甲酰胺、N,N-二甲基甲酰胺、N-甲基甲酰胺、N-甲基乙酰胺、N,N-二甲基乙酰胺、N-甲基吡咯烷酮、二甲基亚砜、苄基乙基醚、二己基醚、丙酮基丙酮、异佛尔酮、己酸、辛酸、1-辛醇、1-壬醇、苄基醇、乙酸苄酯、苯甲酸乙酯、草酸二乙酯、马来酸二乙酯、γ-丁内酯、碳酸亚乙酯、碳酸亚丙酯、乙酸苯基溶纤剂等。
然而,如本领域普通技术人员将认识到的,上面列出和描述的材料作为可用于光刻胶517的光刻胶溶剂组分的材料的实例仅仅是说明性的,并不旨在限制实施例。而是,可以利用可以溶解光刻胶聚合物树脂和PAC的任何合适的材料来帮助混合和施加光刻胶517。所有这些材料完全旨在包括在实施例的范围内。
另外,虽然上述材料中的各个可用作光刻胶517的光刻胶溶剂,但在实施例中,可使用多于一种上述材料。例如,光刻胶溶剂可包括两种或更多种所述材料的组合混合物。所有这些组合完全旨在包括在实施例的范围内。
任选地,还可以将光刻胶交联剂添加到光刻胶517中。光刻胶交联剂在曝光后与光刻胶517内的光刻胶聚合物树脂反应,有助于增加光刻胶的交联密度,这有助于改善光刻胶图案和抗干蚀刻性。在一个实施例中,光刻胶交联剂可以是基于三聚氰胺的试剂、基于尿素的试剂、基于亚乙基脲的试剂、基于丙烯脲的试剂、基于甘脲的试剂、具有羟基的脂族环烃、羟烷基或这些的组合、脂族环烃的含氧衍生物、甘脲化合物、醚化氨基树脂、这些的组合等。
可用作光刻胶交联剂的材料的具体实例包括三聚氰胺、乙酰胍胺、苯并胍胺、尿素、亚乙基脲、或甘脲与甲醛、甘脲与甲醛和低级醇的组合、六甲氧基甲基三聚氰胺、二甲氧基甲基脲、双甲氧基甲基双甲氧基亚乙基脲、四甲氧基甲基甘脲和四丁氧基甲基甘脲、单-、二-、三-或四-羟甲基化的甘脲、单-、二-、三-和/或四-甲氧基甲基化的甘脲、单-、二-、三-和/或四-乙氧基甲基化甘脲、单-、二-、三-和/或四-丙氧基甲基化甘脲以及单-、二-、三-和/或四-丁氧基甲基化甘脲、2,3-二羟基-5-羟甲基降冰片烷、2-羟基-5,6-双(羟甲基)降冰片烷、环己烷二甲醇、3,4,8(或9)-三羟基三环癸烷、2-甲基-2-金刚烷醇、1,4-二恶烷-2,3-二醇和1,3,5-三羟基环己烷、四甲氧基甲基甘脲、甲基丙基四甲氧基肟乙基甘脲和甲基苯基四甲氧基甲基甘脲、2,6-双(羟甲基)对甲酚、N-甲氧基甲基-或N-丁氧基甲基-三聚氰胺。另外,使甲醛、或甲醛和低级醇与含有氨基的化合物(如三聚氰胺、乙酰胍胺、苯胍胺、尿素、亚乙基脲和甘脲)反应,并用羟基甲基或低级烷氧基甲基取代氨基的氢原子得到的化合物,例如,六甲氧基甲基三聚氰胺、二甲氧基甲基脲、二甲氧基甲基二甲氧基乙烯脲、四甲氧基甲基甘脲和四丁氧基甲基甘脲、甲基丙烯酸3-氯-2-羟丙酯与甲基丙烯酸的共聚物、甲基丙烯酸3-氯-2-羟丙酯与甲基丙烯酸环己酯和甲基丙烯酸的共聚物、甲基丙烯酸3-氯-2-羟丙酯和甲基丙烯酸苄酯和甲基丙烯酸的共聚物、双酚A-二(3-氯-2-羟丙基)醚、苯酚酚醛清漆树脂的聚(3-氯-2-羟基丙基)醚、季戊四醇四(3-氯-2-羟丙基)醚、三羟甲基甲烷三(3-氯-2-羟丙基)醚苯酚、双酚A-二(3-乙酰氧基-2-羟丙基)醚、苯酚酚醛清漆树脂的聚(3-乙酰氧基-2-羟丙基)醚、季戊四醇四(3-乙酰氧基-2-羟丙基)醚、季戊四醇聚(3-氯乙酰氧基-2-羟丙基)醚、三羟甲基甲烷三(3-乙酰氧基-2-羟丙基)醚、它们的组合等。
除了光刻胶聚合物树脂、PAC、自由基抑制剂、光刻胶溶剂和光刻胶交联剂之外,光刻胶517还可以包括许多其他添加剂,其将有助于光刻胶517获得最高分辨率。例如,光刻胶517还可包括表面活性剂、猝灭剂、稳定剂、增塑剂、着色剂、粘合添加剂、表面流平剂、这些的组合等。可以使用任何合适的添加剂。
在一个实施例中,将光刻胶聚合物树脂、PAC、自由基抑制剂以及任何所需的添加剂或其他试剂加入到光刻胶溶剂中用于施用。一旦添加,然后混合该混合物以在整个光刻胶517中获得均匀的组合物,以确保不存在由光刻胶517的不均匀混合或非恒定组成引起的缺陷。一旦混合在一起,光刻胶517可以在使用之前存储,也可以立即使用。
一旦准备好,可以通过首先将光刻胶517施加到第二晶种层515上来利用光刻胶517。可以将光刻胶517施加到第二晶种层515,使得光刻胶517涂覆第二晶种层515的上部暴露表面,并且可以使用旋涂工艺、浸涂法、气刀涂布法、帘式涂布法、线棒涂布法、凹版涂布法、层压方法、挤出涂布方法、这些的组合等的工艺施加。在一个实施例中,可以施加光刻胶517,使得其在第二晶种层515的表面上具有介于约10nm和约300nm之间的厚度,例如约150nm。
一旦将光刻胶517施加到半导体衬底上,就实施光刻胶517的预烘焙,以便在曝光之前固化和干燥光刻胶517,以完成光刻胶517的施加。固化和干燥光刻胶517除去光刻胶溶剂组分,同时留下光刻胶聚合物树脂、PAC、自由基抑制剂、光刻胶交联剂和其它选择的添加剂。在一个实施例中,预烘烤可以在适于蒸发光刻胶溶剂的温度下进行,例如在约40℃和150℃之间,但是精确的温度取决于为光刻胶517选择的材料。预烘烤进行足以固化和干燥光刻胶517的时间,例如约10秒至约5分钟,例如约90秒。
图6A示出光刻胶517的曝光以在光刻胶517内形成曝光区域601和未曝光区域603。在一个实施例中,可以通过放置半导体器件100和光刻胶517来启动曝光,一旦固化并且干燥,进入成像装置600进行曝光。成像装置600可包括支撑板605、能量源607、位于支撑板605和能量源607之间的图案化掩模609以及光学器件617。在一个实施例中,支撑板605是放置或附接半导体器件100和光刻胶517的表面,其在光刻胶517的曝光期间向载体衬底101提供支撑和控制。另外,支撑板605可以沿着一个或多个轴移动,以及向载体衬底101和光刻胶517提供任何期望的加热或冷却,以防止温度梯度影响曝光工艺。
在一个实施例中,能量源607向光刻胶517提供诸如光的能量611,以便引发PAC的反应,PAC进而与聚合物树脂反应以化学改变光刻胶517的能量611冲击的那些部分。在一个实施例中,能量611可以是电磁辐射,例如g射线(波长约436nm)、i射线(波长约365nm)、紫外线辐射、远紫外线辐射、极紫外线辐射、X射线、电子束等。能量源607可以是电磁辐射源,并且可以是KrF准分子激光(波长为248nm)、ArF准分子激光(波长为193nm)、F2准分子激光(波长为157nm)等,但是也可以使用任何其他合适的能量源611,例如汞蒸汽灯、氙灯、碳弧灯等。
图案化的掩模609位于能量源607和光刻胶517之间,以便在能量611实际照射在光刻胶517上之前阻挡能量611的部分以形成图案化的能量615。在一个实施例中,图案化的掩模609可以包括一系列层(例如,衬底、吸收层、抗反射涂层、屏蔽层等),以反射、吸收或以其他方式阻挡能量611的部分到达光刻胶517的不期望照射的那些部分。通过以期望的照明形状形成穿过图案化的掩模609的开口,可以在图案化的掩模609中形成期望的图案。
光学器件(在图6A中由标记为617的梯形表示)可以用于在能量611离开能量源607、由图案化的掩模609图案化并且被引向光刻胶517时集中、扩展、反射或以其他方式控制能量611。在一个实施例中,光学器件617包括一个或多个透镜、镜子、滤光器、这些的组合等,以沿其路径控制能量611。另外,虽然光学器件617在图6A中示出为在图案化的掩模609和光刻胶517之间,但是光学器件617的元件(例如,单独透镜、反射镜等)也可以位于能量源607(产生能量611)和光刻胶517之间的任何位置处。
在一个实施例中,具有光刻胶517的半导体器件100放置在支撑板605上。一旦图案已经与半导体器件100对准,能量源607就产生所需的能量611(例如,光),能量611通过图案化的掩模609和光学器件617至光刻胶517。照射在光刻胶517的部分上的图案化的能量615引起光刻胶517内的PAC的反应。PAC吸收图案化的能量615的化学反应产物(例如,酸/碱/自由基)然后与聚合物树脂反应,化学改变通过图案化的掩模609照射的那些部分中的光刻胶517。
图6B示出了在曝光工艺期间图6A中标记为621的框的特写视图。可以看出,在曝光工艺期间,期望的能量611(例如,光)不是直接向下,而是由多个单独的光束组成,这些光束首先会聚然后围绕中心点CP发散。当各个光束彼此足够靠近会聚时,并且在各个光束彼此分开足够远之前,各个光束将相对于彼此并相对于光刻胶517聚焦。在一个实施例中,能量611被聚焦,使得能量611的所有各种发散光束会聚并集中到具有所需宽度的对焦区域613。在特定实施例中,对焦区域613将具有介于约5μm与约500μm之间的第一宽度W1,例如约40μm。然而,可以使用任何合适的宽度。
另外,在对焦区域613具有第一宽度W1的实施例中,对焦区域613也将具有以对焦区域613的中心点Cp为中心的第一高度H1。第一高度H1可以在约1μm和约100μm之间,例如约40μm。然而,可以使用任何合适的尺寸。
然而,为了帮助随后形成的第三外部连接件901避免破裂并减小应力,调整光刻胶517的曝光工艺以帮助成形第三外部连接件901的最终结构。例如,在一个实施例中,对焦区域613的中心点CP的布置不是放置在光刻胶517本身内。而是,对焦区域613的中心点CP放置在第二晶种层515的最上表面下方的第一距离D1处。例如,在一个实施例中,可以布置对焦区域613的中心点CP,使得第一距离D1在第二晶种层515的最上表面下方约60μm和约70μm之间,例如约65μm。
图6C示出了另一实施例,其中对焦区域613偏离位于光刻胶517的中心。然而,在该实施例中,代替中心点CP向下偏移使得中心点CP位于光刻胶517的底面下方,中心点CP沿相反方向偏移,使得中心点CP位于光刻胶517上方。在该实施例中,中心点CP可以偏移第二距离D2,第二距离D2在约0μm和约60μm之间,例如约10μm。然而,可以使用任何合适的尺寸。
图6D示出了在光刻胶517曝光之后光刻胶517的一个所得结构,其中对焦区域613的中心点CP偏移到光刻胶517下方。可以看出,中心点CP偏移后,未曝光区域603的底部不是直的,而是与未曝光区域603的侧壁的其余部分成角度。另外,未曝光区域603相对于第二晶种层515成角度。该成角度的形状有助于形成第三外部连接件901(图6D中未示出,但在下面参照图9进一步示出和描述)。
在光刻胶517曝光之后,可以使用曝光后烘焙以帮助曝光期间的酸/碱/由撞击在PAC上的图案化能量615产生的自由基的产生、分散和反应。这种辅助有助于产生或增强在光刻胶517内的曝光区域601和未曝光区域603之间产生化学差异的化学反应。这些化学差异还引起曝光区域601和未曝光区域603之间的溶解度差异。在一个实施例中,这种曝光后烘烤可以在约40℃至约200℃的温度下进行约10秒至约10分钟的时间。但是,可以使用任何合适的温度和时间。
图7A至图7B示出了在光刻胶517曝光之后使用显影剂701对光刻胶517的显影(图7B示出了图7A中标记为621的虚线框的特写视图)。在曝光光刻胶517并且已经发生曝光后烘烤之后,可以使用负性显影剂或正性显影剂使光刻胶517显影,这取决于光刻胶517的所需图案。在希望去除光刻胶517的未曝光区域603以形成负性的实施例中,可以利用负性显影剂(例如有机溶剂或临界流体)来去除未暴露于图案化的能量615的光刻胶517的那些部分,并且因此保持其原始溶解度。可以使用的材料的具体实例包括烃溶剂、醇溶剂、醚溶剂、酯溶剂、临界流体、这些的组合等。可用于负性溶剂的材料的具体实例包括己烷、庚烷、2-庚酮、乙酸正丁酯、辛烷、甲苯、二甲苯、二氯甲烷、氯仿、四氯化碳、三氯乙烯、甲醇、乙醇、丙醇、丁醇、临界二氧化碳、二乙醚、二丙醚、二丁醚、乙基乙烯基醚、二恶烷、环氧丙烷、四氢呋喃、溶纤剂、甲基溶纤剂、丁基溶纤剂、甲基卡必醇、二乙二醇单乙醚、丙酮、甲乙酮、甲基异丁基酮、异佛尔酮、环己酮、乙酸甲酯、乙酸乙酯、乙酸丙酯、乙酸丁酯、吡啶、甲酰胺、N,N-二甲基甲酰胺等。
如果期望正性显影剂,可以使用诸如碱性水溶液的正性显影剂来去除光刻胶517的暴露于图案化的能量615并且已经通过化学反应改性和改变其溶解度的那些部分。这种碱性水溶液可包括四甲基氢氧化铵(TMAH)、四丁基氢氧化铵、氢氧化钠、氢氧化钾、碳酸钠、碳酸氢钠、硅酸钠、偏硅酸钠、氨水、一甲胺、二甲胺、三甲胺、单乙胺、二乙胺、三乙胺、单异丙胺、二异丙胺、三异丙胺、单丁胺、二丁胺、单乙醇胺、二乙醇胺、三乙醇胺、二甲基氨基乙醇、二乙氨基乙醇、氨、苛性钠、苛性钾、偏硅酸钠、偏硅酸钾、碳酸钠、氢氧化四乙铵、它们的组合等。
然而,如本领域普通技术人员将认识到的,正性显影剂和负性显影剂的上述描述仅旨在说明而非旨在将实施例仅限于上面列出的显影剂。而是,可以利用任何合适类型的显影剂,包括酸显影剂或甚至水显影剂,其可以用于选择性地去除具有与光刻胶517的另一部分不同的性质(例如,溶解度)的光刻胶517的一部分。并且所有这些显影剂完全旨在包括在实施例的范围内。
图7A示出了使用例如旋涂工艺将显影剂701施加到光刻胶517。在该工艺中,在半导体器件100(和光刻胶517)旋转的同时,将显影剂701从光刻胶517上方施加到光刻胶517。在一个实施例中,显影剂701可以以约10ml/min至约2000ml/min之间的流速供应,例如约1000ml/min,同时半导体器件100以约100rpm和约3500rpm之间的速度旋转,例如约1500rpm。在一个实施例中,显影剂701可以处于约10℃至约80℃之间的温度,例如约50℃,并且显影可以持续约1分钟至约60分钟,例如约30分钟。
然而,虽然本文描述的旋涂方法是用于在曝光之后显影光刻胶517的一种合适方法,但是其旨在是说明性的而不是旨在限制实施例。而是,可以使用任何合适的显影方法,包括浸渍工艺、熔池工艺、喷涂工艺、这些的组合等。所有这些显影工艺完全旨在包括在实施例的范围内。
图7B示出了显影工艺的横截面,其中使用了负性显影剂。如图所示,将显影剂701施加到光刻胶517并溶解光刻胶517的未曝光区域603。光刻胶517的未曝光区域603的溶解和去除留下光刻胶517内的开口,以图案化的能量615的形状对光刻胶517进行图案化,从而将图案化的掩模609的图案转移到光刻胶517。
图7B还示出了,在完成显影工艺并且已从光刻胶517去除显影剂701之后,光刻胶517内的开口将具有成角度的底部以截断第二晶种层515。在一个实施例中,底部部分可以处于约5°和约85°之间的第一角度α1,例如约45°。然而,可以使用任何合适的角度。
另外,底部可以形成为具有介于约0.1μm和约10μm之间的第二宽度W2,例如约5μm。底部部分还可具有介于约0.1μm和约10μm之间的第二高度H2,例如约5μm。然而,可以使用任何合适的尺寸。
图8示出了在显影后退火工艺(在图8中由标记为801的波浪线表示)期间图7A中的标记为621的虚线框的特写视图,其用于帮助重塑穿过光刻胶517的开口。在一个实施例中,退火工艺801可以是热退火,其中光刻胶517在惰性气氛中在例如炉内加热。退火工艺801可以在高于玻璃化转变温度(Tg)的温度下进行,例如在约100℃和约130℃之间,例如约120℃,并且可以持续约120秒和约7分钟之间的一段时间,例如约5分钟。但是,可以使用任何合适的工艺条件。
在退火工艺801期间,温度将升高到光刻胶517的玻璃化转变温度之上,并且光刻胶517将稍微熔化并部分地重塑自身,从而也重塑穿过光刻胶517的开口。由此,在退火工艺801之后仍然存在成角度的底部部分,退火工艺801将至少部分地重塑底部部分,使得在退火工艺801之后,底部部分可以处于第二角度α2或喇叭口(flare)角度,第二角度α2不同于第一角度α1,第二角度α2例如介于约10°和约85°之间,例如约45°。此外,在退火工艺801之后,底部部分可以形成为具有介于约0.5μm和约11μm之间的第三宽度W3,例如约5μm,以及介于约0.5μm和约11μm之间的第三高度H3,例如约5μm。然而,可以使用任何合适的尺寸。
图9示出了图7A中标记为621的虚线框的特写视图,其中,一旦已经图案化光刻胶517并且已经实施退火工艺801,就可以在光刻胶517的开口内形成第三外部连接件901。在一个实施例中,第三外部连接件901可以是例如铜柱,并且可以包括一种或多种导电材料,例如铜、钨、其他导电金属等,并且可以例如通过电镀、化学镀等形成。在一个实施例中,使用电镀工艺,其中将第二晶种层515和光刻胶517浸没或浸入电镀溶液中,例如含有硫酸铜(CuSO4)的溶液。第二晶种层515表面电连接到外部DC电源的负极侧,使得第二晶种层515在电镀工艺中用作阴极。固体导电阳极(例如铜阳极)也浸入溶液中并附接在电源的正极侧。来自阳极的原子溶解在溶液中,阴极(例如第二晶种层515)从该溶液中获得溶解的原子,从而在光刻胶517的开口内镀第二晶种层515的暴露的导电区域。
然而,通过使用本文所述的曝光工艺和重塑工艺,可以减少或消除镀工艺的至少一些负面影响。特别地,通过重塑穿过光刻胶517的开口,该轮廓可以帮助避免镀溶液(例如,CuSO4镀溶液)渗透到光刻胶中并且在镀工艺中引起底侵的风险。
一旦使用光刻胶517和第二晶种层515形成第三外部连接件901,就可以使用合适的去除工艺去除光刻胶517。在一个实施例中,可以使用等离子体灰化工艺来去除光刻胶517,由此可以增加光刻胶517的温度直到光刻胶517经历热分解并且可以被去除。然而,可以使用任何其他合适的方法,例如湿剥离。去除光刻胶517可以暴露下面的第二晶种层515的部分。
通过将第三外部连接件901镀到穿过光刻胶517形成的开口中,第三外部连接件901将呈现穿过光刻胶517的开口的形状。这样,第三外部连接件901也将具有位于第六钝化层513和第二晶种层515外部的中间部分,其中,中间部分与下面的晶种层成一定角度向内成角度。在一个实施例中,中间部分具有第二角度α2、第三宽度W3和第三高度H3。然而,可以使用任何合适的尺寸。
图10示出了一旦暴露出第二晶种层515,就可以实施第二晶种层515的暴露部分的去除。在一个实施例中,第二晶种层515的暴露部分(例如,未被第三外部连接件901覆盖的那些部分)可以通过例如湿或干蚀刻工艺去除。例如,在干蚀刻工艺中,可以使用第三外部连接件901作为掩模将反应物引向第二晶种层515,从而形成第二晶种层515以具有与第六钝化层513的表面垂直的直侧壁。在另一个实施例中,可以喷射蚀刻剂或以其他方式使蚀刻剂与第二晶种层515接触,以去除第二晶种层515的暴露部分。
通过如上所述形成第三外部连接件901,可以修改第三外部连接件901的轮廓以底切第三外部连接件901并且有助于减少或消除可以在第三外部连接件901和下面的钝化层之间形成的裂缝。特别地,第三外部连接件901的底切有助于减少可靠性折磨测试期间的压缩应力。随着产生裂缝的可能性减小,可以在仍然通过折磨测试的同时获得更小的间距尺寸。
图11示出了在第三外部连接件901上形成第四外部连接件1101。在一个实施例中,第四外部连接件1101可以是接触凸块,例如微凸块或受控塌陷芯片连接(C4)凸块,并且可以包括诸如锡的材料或其他合适的材料,如银或铜。在第四外部连接件1101是接触凸块的实施例中,第四外部连接件1101可以包括诸如锡的材料,或其他合适的材料,例如银、无铅锡或铜。在第四外部连接件1101是锡焊料凸块的实施例中,可以通过首先通过诸如蒸发、电镀、印刷、焊料转移、球放置等常用方法形成厚度为例如约100μm的锡层来形成第四外部连接件1101。一旦在结构上形成锡层,就可以实施回流以将材料成形为期望的凸块形状,其可具有介于约60μm和约100μm之间的临界尺寸,并且可以形成为圆形或椭圆形。
另外,在一个实施例中,第四外部连接件1101可以在俯视图中形成为圆形。然而,这仅仅是说明性的,并不旨在限制实施例。而是,也可以使用任何合适的形状,例如椭圆形或形状的组合。
图12示出了载体衬底101与第一半导体器件201和第二半导体器件301的脱粘。在一个实施例中,第四外部连接件1101以及因此包括第一半导体器件201和第二半导体器件301的结构可以附接到环结构1201。环结构1201可以是金属环,用于在脱粘工艺期间和之后为结构提供支撑和稳定性。在一个实施例中,第四外部连接件1101、第一半导体器件201和第二半导体器件301使用例如紫外线带1203附接到环结构,但是可以使用任何其他合适的粘合剂或附接。
一旦第四外部连接件1101以及因此包括第一半导体器件201和第二半导体器件301的结构附接到环结构1201,就可以使用例如热工艺来改变粘合层103的粘合性能,将载体衬底101从包括第一半导体器件201和第二半导体器件301的结构脱粘。在特定实施例中,能量源(如紫外(UV)激光、二氧化碳(CO2)激光或红外(IR)激光)用于照射和加热粘合层103,直到粘合层103失去其至少一些粘合性能。一旦实施,载体衬底101和粘合层103可以从包括第四外部连接件1101、第一半导体器件201和第二半导体器件301的结构物理地分离并去除。
图12另外示出了聚合物层105的图案化,以暴露通孔111(以及相关的第一晶种层107)。在一个实施例中,可以使用例如激光钻孔方法对聚合物层105进行图案化。在这种方法中,首先在聚合物层105上沉积保护层,例如光热转换(LTHC)层或hogomax层(图12中未单独示出)。一旦受到保护,激光就被引向希望去除的聚合物层105的那些部分以暴露下面的通孔111。在激光钻孔工艺中,钻孔能量可以在0.1mJ至约30mJ的范围内,并且相对于聚合物层105的法线的钻孔角度为约0°(垂直于聚合物层105)至约85°。在一个实施例中,可以实施图案化以在通孔111上方形成第四开口1205,以具有介于约100μm和约300之间的宽度,例如约200μm。
在另一个实施例中,可以通过首先将光刻胶(图12中未单独示出)施加到聚合物层105以及然后将光刻胶暴露于图案化的能量源(例如,图案化的光源),以诱导化学反应,从而引起光刻胶的暴露于图案化的光源的那些部分的物理变化来图案化聚合物层105。然后将显影剂施加到曝光的光刻胶上以利用物理变化并根据所需图案选择性地去除光刻胶的曝光部分或光刻胶的未曝光部分,并且用例如干蚀刻工艺去除下面的聚合物层105的暴露部分。然而,可以使用用于图案化聚合物层105的任何其他合适的方法。
图13示出了背面球焊盘1301在聚合物层105的开口内的放置,以便保护现在暴露的通孔111。在一个实施例中,背面球焊盘1301可以包括导电材料,例如焊膏上的焊料或者氧焊料保护(OSP),但是可以使用任何合适的材料。在一个实施例中,可以使用模板来施加背面球焊盘1301,但是可以使用任何合适的施加方法,然后回流以形成凸块形状。
图13还示出了背面保护层1303在背面球焊盘1301上的放置和图案化,有效地密封背面球焊盘1301和通孔111之间的接合以防止水分侵入。在一个实施例中,背面保护层1303可以是保护材料,例如PBO、阻焊剂(SR)、层压化合物(LC)带、味之素积层膜(ABF)、非导电膏(NCP)、非导电膜(NCF)、图案化的底部填充(PUF)、翘曲改善粘合剂(WIA)、液态模塑料V9、这些的组合等。然而,也可以使用任何合适的材料。可以使用诸如丝网印刷、层压、旋涂等工艺将背面保护层1303施加到约1μm至约200μm之间的厚度。
图13还示出了一旦放置了背面保护层1303,就可以对背面保护层1303进行图案化以暴露背面球焊盘1301。在一个实施例中,背面保护层1303可以使用例如激光钻孔方法来图案化,通过该激光钻孔方法,激光被引向背面保护层1303的那些希望被去除的部分,以便暴露背面球焊盘1301。在激光钻孔工艺中,钻孔能量可以在范围从0.1mJ到约30mJ,并且相对于背面保护层1303的法线的钻孔角度为约0度(垂直于背面保护层1303)到约85度。在一个实施例中,曝光可以形成直径在约30μm和约300μm之间的开口,例如约150μm。
在另一个实施例中,可以通过首先将光刻胶(图13中未单独示出)施加到背面保护层1303以及然后将光刻胶暴露于图案化的能量源(例如,图案化的光源)以诱导化学反应,从而在光刻胶的暴露于图案化的光源的那些部分中引起物理变化来图案化背面保护层1303。然后将显影剂施加到曝光的光刻胶上以利用物理变化并根据所需图案选择性地去除光刻胶的曝光部分或光刻胶的未曝光部分,并且使用例如干蚀刻工艺去除下面的背面保护层1303的暴露部分。然而,可以使用用于图案化背面保护层1303的任何其他合适的方法。
图13还示出了背面球焊盘1301与第一封装件1300的接合。在一个实施例中,第一封装件1300可以包括第三衬底1305、第三半导体器件1307、第四半导体器件1309(接合到第三半导体器件1307)、第三接触焊盘1311、第二密封剂1313和第五外部连接件1315。在一个实施例中,第三衬底1305可以是例如包括内部互连件(例如,衬底通孔1317)的封装衬底以将第三半导体器件1307和第四半导体器件1309连接到背面球焊盘1301。
在另一实施例中,第三衬底1305可以是用作中间衬底的中介层,以将第三半导体器件1307和第四半导体器件1309连接到背面球焊盘1301。在该实施例中,第三衬底1305可以是例如掺杂或未掺杂的硅衬底或绝缘体上硅(SOI)衬底的有源层。然而,第三衬底1305也可以是玻璃衬底、陶瓷衬底、聚合物衬底或可以提供合适的保护和/或互连功能的任何其他衬底。这些和任何其他合适的材料可以用于第三衬底1305。
第三半导体器件1307可以是为预期目的而设计的半导体器件,例如逻辑管芯、中央处理单元(CPU)管芯、存储器管芯(例如,DRAM管芯)、这些的组合等。在一个实施例中,第三半导体器件1307包括特定功能所需的集成电路器件,例如晶体管、电容器、电感器、电阻器、金属化层(未示出)等。在一个实施例中,第三半导体器件1307被设计和制造成与第一半导体器件201结合或同时工作。
第四半导体器件1309可以类似于第三半导体器件1307。例如,第四半导体器件1309可以是为预期目的而设计的半导体器件(例如,DRAM管芯)并且包括用于所需功能的集成电路器件。在一个实施例中,第四半导体器件1309被设计为与第一半导体器件201和/或第三半导体器件1307结合或同时工作。
第四半导体器件1309可以接合到第三半导体器件1307。在一个实施例中,第四半导体器件1309仅与第三半导体器件1307物理接合,例如通过使用粘合剂。在该实施例中,第四半导体器件1309和第三半导体器件1307可以使用例如引线接合1319电连接到第三衬底1305,但是可以使用任何合适的电接合。
在另一实施例中,第四半导体器件1309可以物理地和电气地接合到第三半导体器件1307。在该实施例中,第四半导体器件1309可以包括外部连接件(图13中未单独示出),其与第三半导体器件1307上的外部连接件(也未在图13中单独示出)连接,以便将第四半导体器件1309与第三半导体器件1307互连。
第三接触焊盘1311可以形成在第三衬底1305上,以在第三半导体器件1307和例如第五外部连接件1315之间形成电连接。在一个实施例中,第三接触焊盘1311可以形成在第三衬底1305内的电气布线(诸如衬底通孔1317)上并且与第三衬底1305内的电气布线电接触。第三接触焊盘1311可以包括铝,但是可以使用其他材料,例如铜。可以使用诸如溅射的沉积工艺来形成第三接触焊盘1311,以形成材料层(未示出),然后可以通过合适的工艺(诸如光刻掩模和蚀刻)去除部分材料层,以形成第三接触焊盘1311。然而,可以利用任何其他合适的工艺来形成第三接触焊盘1311。第三接触焊盘1311可以形成为具有介于约0.5μm和约4μm之间的厚度,例如约1.45μm。
第二密封剂1313可以用于密封和保护第三半导体器件1307、第四半导体器件1309和第三衬底1305。在一个实施例中,第二密封剂1313可以是模塑料并且可以使用模塑装置(图13中未示出)放置。例如,第三衬底1305、第三半导体器件1307和第四半导体器件1309可以放置在模塑装置的腔内,并且腔可以是气密密封的。第二密封剂1313可以在腔被气密密封之前放置在腔内,或者可以通过注入口注入腔中。在一个实施例中,第二密封剂1313可以是模塑料树脂,例如聚酰亚胺、PPS、PEEK、PES、耐热晶体树脂、这些的组合等。
一旦将第二密封剂1313放入腔中使得第二密封剂1313密封第三衬底1305、第三半导体器件1307和第四半导体器件1309周围的区域,可以固化第二密封剂1313以使第二密封剂1313硬化,以用于最佳保护。虽然确切的固化工艺至少部分地取决于为第二密封剂1313选择的特定材料,但是在选择模塑料作为第二密封剂1313的实施例中,固化可以通过诸如加热第二密封剂1313的工艺发生,加热至约100℃至约130℃之间,例如约125℃,加热时间为约60秒至约3000秒,例如约600秒。另外,引发剂和/或催化剂可以包含在第二密封剂1313内,以更好地控制固化工艺。
然而,如本领域普通技术人员将认识到的,上述固化工艺仅仅是示例性工艺,并不意味着限制当前实施例。可以使用其他固化工艺,例如辐射或甚至允许第二密封剂1313在环境温度下硬化。可以使用任何合适的固化工艺,并且所有这些工艺完全旨在包括在本文讨论的实施例的范围内。
在一个实施例中,第五外部连接件1315可以形成为在第三衬底1305和例如背面球焊盘1301之间提供外部连接。第五外部连接件1315可以是接触凸块,例如微凸块或受控塌陷芯片连接(C4)凸块,并且可以包括诸如锡的材料,或其他合适的材料,例如银或铜。在第五外部连接件1315是锡焊料凸块的实施例中,可以通过最初通过任何合适的方法(例如蒸发、电镀、印刷、焊料转移、焊球放置等)形成厚度为例如约100μm的锡层而形成第五外部连接件1315。一旦在结构上形成了锡层,就进行回流以将材料成形为所需的凸块形状。
一旦形成第五外部连接件1315,第五外部连接件1315与背面球焊盘1301对准并与之物理接触,并且实施接合。例如,在第五外部连接件1315是焊料凸块的实施例中,接合工艺可以包括回流工艺,由此第五外部连接件1315的温度升高到第五外部连接件1315将液化和流动的点,因此,一旦第五外部连接件1315重新固化,就将第一封装件1300接合到背面球焊盘1301。
图13另外示出了第二封装件1321与背面球焊盘1301的接合。在一个实施例中,第二封装件1321可以类似于第一封装件1300,并且可以利用类似的工艺接合到背面球焊盘1301。然而,第二封装件1321也可以与第一封装件1300不同。
图14示出了第四外部连接件1101与环结构1201的脱粘以及该结构的单个化以形成第一集成扇出叠层封装(InFO-POP)结构1400。在一个实施例中,通过首先使用例如第二紫外线带将第一封装件1300和第二封装件1321接合到第二环结构,第四外部连接件1101可以从环结构1201脱粘。一旦接合,紫外线带1203可以用紫外线辐射照射,并且一旦紫外线带1203失去其粘合性,第四外部连接件1101可以与环结构1201物理分离。
一旦脱粘,就实施结构的单一化以形成第一InFO-POP结构1400。在一个实施例中,可以通过使用锯片(未示出)切割穿过密封剂401和通孔111之间的聚合物层105来实施分割,从而将一个部分与另一个部分分开以形成第一InFO-POP结构1400。然而,如本领域普通技术人员将认识到的,利用锯片来单个化第一InFO-POP结构1400仅仅是一个说明性实施例,而不是限制性的。也可以使用用于分割第一InFO-POP结构1400的其他方法,例如利用一个或多个蚀刻来分离第一InFO-POP结构1400。可以利用这些方法和任何其他合适的方法来分割第一InFO-POP结构1400。
根据一个实施例,一种制造半导体器件的方法包括:在晶种层上施加光刻胶;将光刻胶暴露于图案化的能量源,图案化的能量源具有带有中心点的对焦区域,该中心点位于光刻胶的面向晶种层的表面下方;使光刻胶显影以形成开口;以及将外部连接件镀到开口中。在一个实施例中,该方法还包括在显影光刻胶之后对光刻胶进行退火,其中使光刻胶退火重塑开口。在一个实施例中,光刻胶的退火将光刻胶的温度升高至约110℃和约130℃之间。在一个实施例中,中心点位于光刻胶的表面下方的距离在约60μm和约70μm之间。在一个实施例中,该方法还包括去除未被外部连接件覆盖的晶种层的部分。在一个实施例中,显影光刻胶包括去除光刻胶的未曝光部分。在一个实施例中,晶种层位于半导体器件周围的密封剂和密封剂通孔上方。
根据另一实施例,一种制造半导体器件的方法包括:将光刻胶暴露于图案化的能量源,该光刻胶位于半导体管芯和密封剂通孔之间的密封剂上;使光刻胶显影以形成具有第一形状的开口;实施显影后烘烤工艺以将开口重塑为与第一形状不同的第二形状,其中第二形状包括靠近开口底部的喇叭口;以及将导电材料镀到开口中。在一个实施例中,曝光光刻胶使图案化的能量源聚焦以形成对焦区域,对焦区域具有位于光刻胶下方的中心点。在一个实施例中,中心点位于光刻胶下方约60μm至约70μm之间的距离。在一个实施例中,显影后烘焙工艺将光刻胶的温度升高至约100℃和约130℃之间的温度。在一个实施例中,喇叭口在与密封剂的主表面平行的第一方向上延伸第一距离,第一距离在约0.1μm和约10μm之间。在一个实施例中,喇叭口在垂直于密封剂的主表面的第二方向上延伸第二距离,第二距离在约0.5μm和约10μm之间。在一个实施例中,喇叭口位于约10°和约85°之间的张角。
根据又一实施例,一种半导体器件包括:半导体管芯;密封剂,密封半导体管芯;密封剂通孔,从密封剂的第一侧延伸到密封剂的第二侧;钝化层,位于密封剂上方;外部连接件,位于密封剂上方,外部连接件包括:第一部分,具有第一宽度,第一部分延伸穿过钝化层;以及第二部分,具有大于第一宽度的第二宽度,第二部分位于钝化层的外部;锥形部分,从第二部分延伸到第一部分。在一个实施例中,锥形部分与线成锥角,该线与密封剂的主表面平行,锥角在约10°和约85°之间。在一个实施例中,半导体器件还包括与外部连接件物理接触的焊球,焊球具有椭圆形状。在一个实施例中,半导体器件还包括与外部连接件物理接触的焊球,焊球具有圆形形状。在一个实施例中,半导体器件还包括位于外部连接件和钝化层之间的晶种层,晶种层具有与钝化层的表面垂直的直侧壁。在一个实施例中,半导体器件还包括位于外部连接件和密封剂之间的再分布层。
上面概述了若干实施例的特征,使得本领域人员可以更好地理解本发明的方面。本领域人员应该理解,它们可以容易地使用本发明作为基础来设计或修改用于实施与本文所介绍实施例相同的目的和/或实现相同优势的其它工艺和结构。本领域技术人员也应该意识到,这种等同构造并且不背离本发明的精神和范围,并且在不背离本发明的精神和范围的情况下,本文中它们可以做出多种变化、替换以及改变。
Claims (10)
1.一种制造半导体器件的方法,所述方法包括:
在晶种层上施加光刻胶;
将所述光刻胶暴露于图案化的能量源,所述图案化的能量源具有带有中心点的对焦区域,所述中心点位于所述光刻胶的面向所述晶种层的表面下方;
使所述光刻胶显影以形成开口;以及
将外部连接件镀到所述开口中。
2.根据权利要求1所述的方法,还包括在显影所述光刻胶之后对所述光刻胶进行退火,其中,使所述光刻胶退火重塑所述开口。
3.根据权利要求2所述的方法,其中,所述光刻胶的退火将所述光刻胶的温度升高至110℃和130℃之间。
4.根据权利要求1所述的方法,其中,所述中心点位于所述光刻胶的表面下方的距离在60μm和70μm之间。
5.根据权利要求1所述的方法,还包括去除未被所述外部连接件覆盖的所述晶种层的部分。
6.根据权利要求1所述的方法,其中,显影所述光刻胶包括去除所述光刻胶的未曝光部分。
7.根据权利要求1所述的方法,其中,所述晶种层位于半导体器件周围的密封剂和密封剂通孔上方。
8.一种制造半导体器件的方法,所述方法包括:
将光刻胶暴露于图案化的能量源,所述光刻胶位于半导体管芯和密封剂通孔之间的密封剂上;
使所述光刻胶显影以形成具有第一形状的开口;
实施显影后烘烤工艺以将所述开口重塑为与所述第一形状不同的第二形状,其中,所述第二形状包括靠近所述开口的底部的喇叭口;以及
将导电材料镀到所述开口中。
9.根据权利要求8所述的方法,其中,曝光所述光刻胶使所述图案化的能量源聚焦以形成对焦区域,所述对焦区域具有位于所述光刻胶下方的中心点。
10.一种半导体器件,包括:
半导体管芯;
密封剂,密封所述半导体管芯;
密封剂通孔,从所述密封剂的第一侧延伸到所述密封剂的第二侧;
钝化层,位于所述密封剂上方;以及
外部连接件,位于所述密封剂上方,所述外部连接件包括:
第一部分,具有第一宽度,所述第一部分延伸穿过所述钝化层;
第二部分,具有大于所述第一宽度的第二宽度,所述第二部分位于所述钝化层的外部;和
锥形部分,从所述第二部分延伸到所述第一部分。
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