CN110660338A - LED display unit based on TFT glass substrate - Google Patents
LED display unit based on TFT glass substrate Download PDFInfo
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- CN110660338A CN110660338A CN201911074611.XA CN201911074611A CN110660338A CN 110660338 A CN110660338 A CN 110660338A CN 201911074611 A CN201911074611 A CN 201911074611A CN 110660338 A CN110660338 A CN 110660338A
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Images
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention relates to an LED display unit based on a TFT glass substrate, wherein a pixel unit of the unit is arranged on the front surface of the TFT glass substrate, and an electrode of the pixel unit is connected with a TFT drive circuit; the packaging structure is coated on the front surface of the TFT glass substrate; the packaging structure is made of a material consisting of a component A and a component B; the component A comprises 80-90 parts by weight of epoxy resin, 10-15 parts by weight of organosilicon intermediate and 0.2-2 parts by weight of defoaming agent; the component B comprises 95 to 98 weight portions of methylhexahydrophthalic anhydride, 0.5 to 4 weight portions of tetrabutylammonium bromide serving as a catalyst, 0.3 to 0.9 weight portion of antioxidant and 0.1 to 0.5 weight portion of light stabilizer; the invention can effectively reduce the cost, and has high precision and good display effect; the modified organic silicon resin material can be used for curing at normal temperature, so that the stress problem of high-temperature curing is effectively solved, and the surface consistency is good.
Description
Technical Field
The invention belongs to the technical field of LED display screens, and relates to a surface packaging protection structure of an LED display unit based on a TFT glass substrate.
Background
At present, with the rapid development of LED packaging technology, the process is gradually mature, and the market demand below P1.0mm dot pitch is gradually increased. At present, the dot spacing is between P0.1 and P0.5, the range of the used chip is between 10 and 50um, and the Micro-LED is defined in the industry. The P0.1-P0.5 point spacing is limited by the chip size and the process of the circuit board, and the optimal realization mode is to use a glass substrate based on TFT drive. As the scene displayed by the LED generally needs to be added with a protective layer above the LED lamp bead.
The traditional COB packaging material adopts epoxy resin, the epoxy resin is used as the packaging material of the high-density small-spacing COB packaged LED display screen, the electrical insulation performance, the sealing performance and the transparency are excellent, and the COB packaging material is the mainstream material of the LED display screen due to the fact that the material is easy to obtain, the yield is high, and the price is low. However, due to the special properties of epoxy resin, the conventional COB package adopts a molding method, which can improve the uniformity of surface packaging. However, the application of this method to a glass substrate based on TFT driving has certain limitations, and the reason is mainly two points, namely, the particularity of the epoxy resin material, the curing temperature of the conventional modified epoxy resin is 80-150 ℃, the mold pressing glue is limited by the warping, the operation time and the surface light emitting consistency, and the temperature is selected to be about 110 ℃, while the glass substrate based on TFT driving is a brittle material, the expansion coefficient of the glass substrate is greatly different from that of the epoxy resin, the substrate is easily cracked in the mold pressing process, and the requirements for the thickness of the glue layer are higher due to the smaller distance between light emitting points, the thickness of the glue layer is usually controlled to be 0.3 or less at P0.5 or less, and the surface consistency of the glue layer with this thickness is difficult to be ensured in the mold pressing process. Based on the problem, the invention provides an LED display unit surface packaging protection structure based on a TFT glass substrate.
Disclosure of Invention
The invention aims to provide an LED display unit based on a TFT glass substrate, wherein a packaging structure can be prepared on the surface of the TFT glass substrate in a uniform spraying mode, and the stress problem of high-temperature curing can be effectively solved.
In order to solve the technical problem, the LED display unit based on the TFT glass substrate comprises a pixel unit and an encapsulation structure; the pixel structure is characterized by further comprising a TFT glass substrate containing a TFT drive circuit, the pixel unit is arranged on the front surface of the TFT glass substrate, and an electrode of the pixel unit is connected with the TFT drive circuit; the packaging structure is coated on the front surface of the TFT glass substrate; the packaging structure adopts an epoxy resin packaging material which consists of a component A and a component B; the component A comprises 80-90 parts by weight of epoxy resin, 10-15 parts by weight of organosilicon intermediate and 0.2-2 parts by weight of defoaming agent; the component B comprises 95 to 98 weight portions of methylhexahydrophthalic anhydride, 0.5 to 4 weight portions of tetrabutylammonium bromide serving as a catalyst, 0.3 to 0.9 weight portion of antioxidant and 0.1 to 0.5 weight portion of light stabilizer.
The height of the packaging structure is the placing height of the light emitting chips in the pixel units.
The organic silicon intermediate is one or more of methyl phenyl silicon resin, methyl silicon resin, low phenyl methyl silicon resin, benzyl silicon resin, epoxy modified organic silicon resin, organic silicon polyester modified resin, polymethyl silicon resin and amino silicon resin.
The defoaming agent is one or more of BYK-A530, BYK-066, BYK-1794, BYK-054 and D.E. 6500.
The antioxidant is one or more of 2, 6-di-tert-butyl-p-cresol, tetra [ beta- (3, 5-di-tert-butyl-4-hydroxyphenyl) propionic acid ] pentaerythritol ester and beta- (3, 5-di-tert-butyl-4-hydroxyphenyl) propionic acid octadecyl ester.
The light stabilizer adopts hindered amine materials.
The light stabilizer adopts one or more of 2, 6-di-tert-butyl-p-cresol, 4, 6-di (octylthiomethyl) o-cresol, 2, 4-dihydroxy benzophenone and an ultraviolet ray absorbing agent-384-2.
The preparation method of the packaging structure comprises the following steps:
after the raw materials of the component A are weighed according to the weight ratio, stirring for 3-4h at the temperature of 70-90 ℃ until the raw materials are uniformly mixed;
filtering with 400 mesh filter cloth to obtain component A; after the raw materials of the component B are weighed according to the weight ratio, stirring for 3-4h at the temperature of 70-90 ℃ until the raw materials are uniformly mixed; filtering with 400 mesh filter cloth to obtain component B; according to the molar ratio of the epoxy resin in the component A to the methylhexahydrophthalic anhydride in the component B of 1: 1, mixing the component A and the component B, adding a scattering agent with the total weight of 0.3-0.6 time, adding melanin with the total weight of 1-8 per mill, stirring until the mixture is uniformly mixed, and vacuumizing in a vacuum box to obtain the required epoxy resin packaging glue; adding epoxy resin packaging glue into a glue tank of a coating machine, wherein the coating machine adopts a spray head with the caliber of 1.5-3.0mm, the opening degree of a valve is adjusted to 24-30, the glue opening time is 200-400ms in advance, and then coating is carried out on a cell plate, wherein the coating thickness is 80-100 mu m; putting the coated unit plate into a reflow oven for baking, and baking at a temperature of 4 ℃ and a chain speed of 50-80cm/min at 70 ℃; and taking out the substrate from the reflow furnace, and then putting the substrate into an oven for baking at the temperature of 80 ℃ for 1 hour to obtain the packaging structure.
Stirring the mixture until the mixture is uniformly mixed to obtain the required epoxy resin packaging material; and spraying the epoxy resin packaging material on the front surface of the TFT glass substrate 1, and curing at normal temperature to obtain the packaging structure.
The pixel unit comprises a red chip, a green chip and a blue chip; the red chip adopts a chip with a vertical structure of a counter electrode, and the anode of the chip is bonded on a pad of the red anode through conductive silver adhesive; the green chip and the blue chip are positively mounted chips and are adhered to the insulating layer by insulating glue, the anodes of the green chip and the blue chip are respectively connected with a green anode bonding pad and a blue anode bonding pad through leads, and the cathodes of the red chip, the green chip and the blue chip are all connected with a common cathode bonding pad through leads; the common cathode bonding pad, the green anode bonding pad, the blue anode bonding pad, the red anode bonding pad and the insulating layer are all prepared on the TFT substrate; the common cathode is connected with the negative electrode of the TFT drive circuit through three data lines, the red positive electrode pad, the green positive electrode pad and the blue positive electrode pad are respectively connected with a line scanning switch pipeline through the data lines, and simultaneously connected with a storage capacitor and a column drive data line of the TFT drive circuit through a TFT2 drive tube and a TFT1 switch tube; the common cathode bonding pad, the red anode bonding pad, the green anode bonding pad and the blue anode bonding pad are all copper bonding pads or nickel bonding pads plated on the TFT substrate.
The pixel unit comprises a red chip, a green chip and a blue chip; the red chip, the green chip and the blue chip are all flip chips; three anode pads and three cathode pads are prepared on the TFT substrate, the transparent flat insulating layer covers the TFT substrate, and an anode window are respectively formed in the regions right above the anode pads and the cathode pads; the anodes of the red chip, the green chip and the blue chip are bonded with the corresponding anode bonding pads through conductive materials, and the cathodes are bonded with the corresponding cathode bonding pads through conductive silver adhesives; the three anode pads are connected with a TFT row scanning switch pipeline through data lines, and are connected with a storage capacitor and a column driving data line of a TFT driving circuit through a TFT2 driving tube and a TFT1 switching tube; the three cathode pads are connected with the negative electrode of the TFT drive circuit through data lines; and the three anode bonding pads and the three cathode bonding pads are all copper bonding pads or nickel bonding pads plated on the TFT substrate.
In the traditional surface packaging mode, epoxy resin glue is filled above a carrier plate which is subjected to die bonding, and then the thickness of the surface is controlled in a die pressing mode so that the carrier plate has the uniformity of smooth surface. The LED lamp is characterized in that the glue surface is a certain distance away from the LED light-emitting chip, and the glue surface plays a certain role in protecting the light-emitting LED.
With the continuous maturity of liquid crystal technology, the TFT technology in the liquid crystal field is mature and low in cost. According to the invention, the COB drive circuit board is replaced by the TFT glass substrate containing the TFT drive circuit, and the LED pixels are driven by the TFT drive circuit, so that the cost can be effectively reduced, the precision is high, and the display effect is good; the packaging structure of the surface of the TFT glass substrate is prepared on the surface of the TFT glass substrate by adopting an organic silicon modified resin material in a uniform spraying mode, and is characterized in that the height of a chip is taken as a reference, the spraying height is the placing height of the chip, and the packaging structure plays a certain role in protecting the chip. The modified organic silicon resin material can be cured at normal temperature, effectively solves the stress problem of high-temperature curing, has good surface consistency, can effectively prevent water and moisture, prevent mold and improve the insulating strength.
Drawings
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
FIG. 1 is a cross-sectional view of an LED display unit based on a TFT glass substrate according to the present invention.
Fig. 2 is a top view of a pixel unit and a TFT substrate in embodiment 1.
Fig. 3 is a schematic layout diagram of a pixel cell in embodiment 1.
Fig. 4 is a top view of the pixel unit (with the red, green and blue chips removed) and the TFT substrate of embodiment 2.
Fig. 5 is a top view of a pixel unit and a TFT substrate in embodiment 2.
In the figure: in the figure, 1, a TFT glass substrate, 11, a negative electrode, 12, a positive electrode, 13, a TFT1 switch tube, 14, a TFT2 driving tube, 15, a storage capacitor, 16, a data line, 17, a data line, 18, a row scanning switch pipeline, 19, a column driving data line, 2, a pixel unit, 21, a red chip, 22, a green chip, 23, a blue chip, 3, a packaging structure, 41, a common cathode pad, 42, a green anode pad, 43, a blue anode pad, 44, a red anode pad, 45, an insulating layer, 51, an anode pad, 52, an anode window, 521, a light-emitting chip anode, 53, a cathode pad, 54, a cathode window, 541 and a light-emitting chip cathode are arranged.
Detailed Description
As shown in fig. 1, the LED display unit based on TFT glass substrate of the present invention comprises a TFT glass substrate 1 including a TFT driving circuit, a pixel unit 2, and an encapsulation structure 3; the pixel unit 2 is arranged on the front surface of the TFT glass substrate 1, and the electrode of the pixel unit 2 is connected with a TFT drive circuit; the packaging structure 3 is coated on the front surface of the TFT glass substrate 1; the height of the package structure 3 is the placing height of the light emitting chip in the pixel unit 2.
The packaging structure 3 adopts an epoxy resin packaging material, and the preparation method comprises the following steps:
weighing 80-90 parts by weight of epoxy resin, 10-15 parts by weight of organosilicon intermediate and 0.2-2 parts by weight of defoaming agent, stirring for 3-4h at 70-90 ℃ until the components are uniformly mixed, and filtering by 400-mesh filter cloth to obtain a component A; weighing 95-98 parts by weight of methylhexahydrophthalic anhydride, 0.5-4 parts by weight of tetrabutylammonium bromide serving as a catalyst, 0.3-0.9 part by weight of antioxidant and 0.1-0.5 part by weight of light stabilizer, stirring for 3-4 hours at 70-90 ℃ until the components are uniformly mixed, and filtering by using 400-mesh filter cloth to obtain a component B; according to the molar ratio of the epoxy resin in the component A to the methylhexahydrophthalic anhydride in the component B of 1: 1, mixing the component A and the component B; adding a scattering agent with the weight 0.3-0.6 times of the total weight, adding melanin with the weight proportion of 1-8 per mill, stirring for 15 minutes, and vacuumizing in a vacuum box for 10 minutes to obtain the required epoxy resin packaging glue; adding epoxy resin packaging glue into a glue tank of a coating machine, wherein the coating machine adopts a spray head with the caliber of 1.5-3.0mm, the opening degree of a valve is adjusted to 24-30, the glue opening time is 200-400ms in advance, and then coating is carried out on a cell plate, and the coating thickness is 80-100 mu m; and (3) putting the coated unit board into a reflow furnace for baking, baking at a temperature of 4 ℃ and a chain speed of 50-80cm/min at 70 ℃, taking out the unit board from the reflow furnace, and putting the unit board into an oven for baking at a temperature of 80 ℃ for 1 hour to obtain the packaging structure 3.
The organosilicon intermediate can adopt one or more of methyl phenyl silicone resin, methyl silicone resin, low phenyl methyl silicone resin, benzyl silicone resin, epoxy modified silicone resin, organosilicon polyester modified resin, polymethyl silicone resin and amino silicone resin.
The defoaming agent can be one or more of BYK-A530, BYK-066, BYK-1794, BYK-054 and D.E. 6500.
The antioxidant can adopt one or more of 2, 6-di-tert-butyl-p-cresol, tetra [ beta- (3, 5-di-tert-butyl-4-hydroxyphenyl) propionic acid ] pentaerythritol ester and beta- (3, 5-di-tert-butyl-4-hydroxyphenyl) propionic acid octadecyl ester.
The light stabilizer adopts hindered amine materials, such as one or more of 2, 6-di-tert-butyl-p-cresol, 4, 6-di (octylthiomethyl) o-cresol, 2, 4-dihydroxy benzophenone and an ultraviolet ray absorbing agent-384-2.
Example 1
As shown in fig. 2, the pixel unit 2 includes a red chip 21, a green chip 22, and a blue chip 23; the red chip 21, the green chip 22 and the blue chip 23 are subjected to die bonding in a needle transfer mode; the red chip 21 adopts a chip with a vertical structure of a counter electrode, and the anode of the chip is adhered to the red anode bonding pad 44 through conductive silver adhesive; the green chip 22 and the blue chip 23 are mounted on the insulating layer 45 by adopting a positive chip and are adhered by adopting an insulating adhesive, the positive electrode of the green chip 22 is connected with the green positive electrode bonding pad 42 by a lead, the positive electrode of the blue chip 23 is connected with the blue positive electrode bonding pad 43 by a lead, and the negative electrodes of the red chip 21, the green chip 22 and the blue chip 23 are connected with the common cathode bonding pad 41 by leads; the common cathode pad 41, the red anode pad 44, the green anode pad 42 and the blue anode pad 43 are all copper pads or nickel pads plated on the TFT substrate; the insulating layer 45 is deposited on the TFT substrate by a chemical vapor deposition method.
The common cathode 41 is connected to the TFT driving circuit cathode 11 through three data lines, and the red positive pad 44, the green positive pad 42 and the blue positive pad 43 are connected to the row scanning switch line 18 through the data lines, and are connected to the storage capacitor 15 and the column driving data line 19 of the TFT driving circuit through the TFT2 driving transistor 14 and the TFT1 switching transistor 13.
As shown in fig. 3, the insulating layer windows 45 have a longitudinal width a of 4-7mil, the green and blue positive electrode pads 42, 43 have a longitudinal width B of 4-8mil, the common cathode pad 41 has a longitudinal width C of 4-8mil, and the red positive electrode pad 44 has a longitudinal width D of 7-10 mil.
Example 2
As shown in fig. 4 and 5, the pixel unit 2 includes a red chip 21, a green chip 22, and a blue chip 23; the red chip 21, the green chip 22 and the blue chip 23 are all flip chips; three anode pads 51 and three cathode pads 53 are prepared on the TFT substrate, and a transparent flat insulating layer covers the TFT substrate and opens an anode window 52 and a cathode window 54 in regions directly above the anode pads 51 and the cathode pads 53, respectively, to protect the TFT driving circuit. The anodes 521 of the red chip 21, the green chip 22 and the blue chip 23 are adhered to the corresponding anode bonding pads 51 through conductive silver adhesive, and the cathodes 541 of the chips are adhered to the corresponding cathode bonding pads 53 through conductive silver adhesive; the three anode pads 51 and the three cathode pads 53 are copper pads or nickel pads plated on the TFT substrate 1; and then depositing a transparent flat insulating layer on the metal bonding pad by adopting a chemical vapor deposition method, etching an anode window 52 and a cathode window 54 in the regions right above the three anode bonding pads 51 and the three cathode bonding pads 53 respectively by adopting a dry etching method, and connecting the anodes 521 and the cathodes 541 of the red chip 21, the green chip 22 and the blue chip 23 with the corresponding anode bonding pads 51 and the corresponding cathode bonding pads 53 respectively through conductive welding materials. The conductive welding material can be selected from conductive silver paste, solder paste and solder paste active soldering flux.
The three anode pads 51 are connected with a TFT row scanning switch pipeline 18 through data lines, and are connected with a storage capacitor 15 and a column driving data line 19 of a TFT driving circuit through a TFT2 driving tube 14 and a TFT1 switching tube 13; the three cathode pads 53 are connected to the negative electrode 11 of the TFT driving circuit through data lines.
Claims (9)
1. An LED display unit based on a TFT glass substrate comprises a pixel unit (2), an encapsulation structure (3); the pixel structure is characterized by further comprising a TFT glass substrate (1) comprising a TFT drive circuit, wherein the pixel unit (2) is arranged on the front surface of the TFT glass substrate (1), and the electrode of the pixel unit (2) is connected with the TFT drive circuit; the packaging structure (3) is coated on the front surface of the TFT glass substrate (1); the packaging structure (3) adopts an epoxy resin packaging material which consists of a component A and a component B; the component A comprises 80-90 parts by weight of epoxy resin, 10-15 parts by weight of organosilicon intermediate and 0.2-2 parts by weight of defoaming agent; the component B comprises 95 to 98 weight portions of methylhexahydrophthalic anhydride, 0.5 to 4 weight portions of tetrabutylammonium bromide serving as a catalyst, 0.3 to 0.9 weight portion of antioxidant and 0.1 to 0.5 weight portion of light stabilizer.
2. The LED display unit based on TFT glass substrate as claimed in claim 1, wherein the height of the packaging structure (3) is the placement height of the light emitting chip in the pixel unit (2).
3. The LED display unit based on the TFT glass substrate as claimed in claim 1, wherein the silicone intermediate is one or more of methyl phenyl silicone resin, methyl silicone resin, low phenyl methyl silicone resin, benzyl silicone resin, epoxy modified silicone resin, silicone polyester modified resin, polymethyl silicone resin and amino silicone resin.
4. The TFT glass substrate-based LED display unit of claim 1, wherein the anti-foaming agent is one or more of BYK-A530, BYK-066, BYK-1794, BYK-054 and a humble 6500.
5. The TFT glass substrate-based LED display unit according to claim 1, wherein the antioxidant is one or more of 2, 6-di-tert-butyl-p-cresol, pentaerythritol tetrakis [ beta- (3, 5-di-tert-butyl-4-hydroxyphenyl) propionate ], and octadecyl beta- (3, 5-di-tert-butyl-4-hydroxyphenyl) propionate.
6. The TFT glass substrate-based LED display unit according to claim 1, wherein the light stabilizer is a hindered amine material.
7. The TFT glass substrate-based LED display unit according to claim 1, wherein the packaging structure is prepared by the following method:
after the raw materials of the component A are weighed according to the weight ratio, stirring for 3-4h at the temperature of 70-90 ℃ until the raw materials are uniformly mixed;
filtering with 400 mesh filter cloth to obtain component A; after the raw materials of the component B are weighed according to the weight ratio, stirring for 3-4h at the temperature of 70-90 ℃ until the raw materials are uniformly mixed; filtering with 400 mesh filter cloth to obtain component B; according to the molar ratio of the epoxy resin in the component A to the methylhexahydrophthalic anhydride in the component B of 1: 1, mixing the component A and the component B, adding a scattering agent with the total weight of 0.3-0.6 time, adding melanin with the total weight of 1-8 per mill, stirring until the mixture is uniformly mixed, and vacuumizing in a vacuum box to obtain the required epoxy resin packaging glue; adding epoxy resin packaging glue into a glue tank of a coating machine, wherein the coating machine adopts a spray head with the caliber of 1.5-3.0mm, the opening degree of a valve is adjusted to 24-30, the glue opening time is 200-400ms in advance, and then coating is carried out on a cell plate, wherein the coating thickness is 80-100 mu m; putting the coated unit plate into a reflow oven for baking, and baking at a temperature of 4 ℃ and a chain speed of 50-80cm/min at 70 ℃; and taking out the substrate from the reflow furnace, and then putting the substrate into an oven for baking at the temperature of 80 ℃ for 1 hour to obtain the packaging structure.
8. The TFT glass substrate based LED display unit according to claim 1, wherein the pixel unit (2) comprises a red chip (21), a green chip (22), a blue chip (23); the red chip (21) adopts a chip with a vertical structure of a counter electrode, and the anode of the chip is adhered to a red anode bonding pad (44) through conductive silver adhesive; the green chip (22) and the blue chip (23) are mounted on the insulating layer (45) by adopting a positive chip and are adhered to the insulating layer by adopting insulating glue, the anodes of the green chip (22) and the blue chip (23) are respectively connected with a green anode bonding pad (42) and a blue anode bonding pad (43) by leads, and the cathodes of the red chip (21), the green chip (22) and the blue chip (23) are respectively connected with a common cathode bonding pad (41) by leads; a common cathode bonding pad (41), a green anode bonding pad (42), a blue anode bonding pad (43), a red anode bonding pad (44) and an insulating layer (45) are all prepared on the TFT substrate (1); the common cathode (41) is connected with a TFT drive circuit cathode (11) through three data lines, a red positive electrode pad (44), a green positive electrode pad (42) and a blue positive electrode pad (43) are respectively connected with a row scanning switch pipeline (18) through the data lines, and simultaneously connected with a storage capacitor (15) and a column driving data line (19) of the TFT drive circuit through a TFT2 drive tube (14) and a TFT1 switch tube (13); the common cathode bonding pad (41), the red anode bonding pad (44), the green anode bonding pad (42) and the blue anode bonding pad (43) are all copper bonding pads or nickel bonding pads plated on the TFT substrate (1).
9. The TFT glass substrate based LED display unit according to claim 1, wherein the pixel unit (2) comprises a red chip (21), a green chip (22), a blue chip (23); the red chip (21), the green chip (22) and the blue chip (23) are all flip chips; three anode pads (51) and three cathode pads (53) are prepared on the TFT substrate, a transparent flat insulating layer covers the TFT substrate, and an anode window (52) and an anode window (54) are respectively opened in the area right above the anode pads (51) and the cathode pads (53); the anodes of the red chip (21), the green chip (22) and the blue chip (23) are bonded with the corresponding anode bonding pads through conductive silver adhesive, and the cathodes are bonded with the corresponding cathode bonding pads through the conductive silver adhesive; the three anode pads (51) are connected with a TFT row scanning switch pipeline (18) through data lines, and are connected with a storage capacitor (15) and a column driving data line (19) of a TFT driving circuit through a TFT2 driving tube (14) and a TFT1 switching tube (13); three cathode pads (53) are connected with a negative electrode (11) of the TFT drive circuit through data lines; the three anode pads (51) and the three cathode pads (53) are all copper pads or nickel pads plated on the TFT substrate (1).
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