CN105206642A - Super-high-density LED display device and manufacturing method thereof - Google Patents
Super-high-density LED display device and manufacturing method thereof Download PDFInfo
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- CN105206642A CN105206642A CN201510664592.1A CN201510664592A CN105206642A CN 105206642 A CN105206642 A CN 105206642A CN 201510664592 A CN201510664592 A CN 201510664592A CN 105206642 A CN105206642 A CN 105206642A
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- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 239000000843 powder Substances 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims description 45
- 239000002184 metal Substances 0.000 claims description 45
- 239000000463 material Substances 0.000 claims description 42
- 239000000206 moulding compound Substances 0.000 claims description 29
- 238000004020 luminiscence type Methods 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 229960001866 silicon dioxide Drugs 0.000 claims description 23
- 239000000741 silica gel Substances 0.000 claims description 22
- 229910002027 silica gel Inorganic materials 0.000 claims description 22
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 239000008367 deionised water Substances 0.000 claims description 9
- 229910021641 deionized water Inorganic materials 0.000 claims description 9
- 238000002955 isolation Methods 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 239000003822 epoxy resin Substances 0.000 claims description 8
- 229920000647 polyepoxide Polymers 0.000 claims description 8
- 239000002390 adhesive tape Substances 0.000 claims description 6
- 238000001465 metallisation Methods 0.000 claims description 5
- 239000003292 glue Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- CYMRPDYINXWJFU-UHFFFAOYSA-N 2-carbamoylbenzoic acid Chemical compound NC(=O)C1=CC=CC=C1C(O)=O CYMRPDYINXWJFU-UHFFFAOYSA-N 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims description 2
- 239000002096 quantum dot Substances 0.000 claims description 2
- 229920001169 thermoplastic Polymers 0.000 claims description 2
- 229920001187 thermosetting polymer Polymers 0.000 claims description 2
- 239000004416 thermosoftening plastic Substances 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 9
- 238000004806 packaging method and process Methods 0.000 abstract description 8
- 238000005530 etching Methods 0.000 description 11
- 238000002161 passivation Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 238000001259 photo etching Methods 0.000 description 7
- 230000017525 heat dissipation Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000003487 electrochemical reaction Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001548 drop coating Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- -1 gold Chemical class 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
Abstract
The invention discloses a super-high-density LED display device which comprises a substrate and an LED chip array packaged on the substrate. The chip array comprises a plurality of LED chips distributed evenly at intervals. By means of the Fan-Out Wafer-Level Package (FOWLP) process, the packaging area is narrowed, and the resolution ratio of an LED display screen is increased; all the LED chips are the same in structure, light-emitting wave band and type, the LED chips emit red light, green light and blue light after being coated with red light fluorescent powder, green light fluorescent powder and blue light fluorescent powder in a chip light-emitting curing mode respectively, and therefore it is ensured that the LED chips are consistent in light attenuation in the use process, and the development performance of the display screen is improved; pixel point distances can be smaller than 1 mm and even smaller than 0.1 mm, better performance such as high integrity, high resolution and consistent light color of the LED display device is achieved, and the super-high-density LED display device is importantly applied to indoor high-density display screens, projection devices and wearable display devices.
Description
Technical field
The present invention relates to technical field of LED display, particularly relate to a kind of super-high density light-emitting diode display part.
Background technology
Light-emitting diode display part, is mainly made up of LED dot matrix, by controlling assorted LED, as redness, blueness, white, green LED etc. bright, going out shows the display screen of the various information such as word, figure, image, animation, market, video, video signal.Due to LED operating voltage low (only 1.5 ~ 3.6V), can active illuminating and have certain brightness, brightness regulates by voltage (or electric current) again, shock-resistant, anti-vibration itself, life-span reaches 100,000 hours, so in large-scale display device, the display mode that there is no other can be equal to LED display mode.
But existing LED technology display screen has following defect:
The point-source of light element of 1.LED display screen adopts SMD or direct insertion LED component to be assembled on substrate, a single point light source volume is larger, pixel interval is larger, realize the pixel pitch of below 1mm, higher to the requirement of SMD device package, packaging cost significantly improves, and is unfavorable for that LED display is in extensive use that is digital and miniature display field.
2. each pixel adopts the LED chip of different semi-conducting material, its light decay and voltage drift characteristic inconsistent, thus in use there is color drift, affect the display effect of screen picture.
Summary of the invention
The object of the invention is to overcome shortcoming of the prior art with not enough, provide one to have high integration, high-resolution, photochromic consistency better super-high density light-emitting diode display part.
The present invention is achieved by the following technical solutions: a kind of super-high density light-emitting diode display part, comprise a plurality of LED luminescence chip, chip is provided with the light-converting material applied by the mode of self light curable.
Further, light isolation is carried out by moulding compound between chip and chip.
Preferably, described molding compound material is thermoplastic poly phthalic amide, the highly reflective materials such as thermosetting epoxy resin.
Wherein, different LED chip can be provided with the light-converting material applied by the mode of self light curable more than a kind of color, described LED chip unit is the LED chip unit of the same race that structure is identical with luminescence band.
Further, described light-converting material is fluorescent material and epoxide-resin glue or silica-gel mixture;
Or described light-converting material is quantum dot fluorescence material and epoxide-resin glue or silica-gel mixture;
The manufacture method of above-mentioned a kind of super-high density light-emitting diode display part, comprises the steps:
(1) prepare a substrate, chip array is set on substrate, and at chip perimeter, light-proof material is set to realize the light isolation between chip and chip; Before or after chip is set to substrate, through hole and metal wiring layer are set on substrate;
(2) fluorescent material is arranged on this LED chip array by the mode of chip self light curable.
Further, above-mentioned steps 1) and step 2) between can also comprise following steps: the chip of Drive and Control Circuit and device are arranged on moulding compound or base lower surface, make it to realize being electrically connected with LED;
Compared to prior art, the present invention has the following advantages and beneficial effect:
Adopt fan-out formula wafer-class encapsulation (Fan-OutWafer-LevelPackage, FOWLP) that inter-chip pitch and package area can be reduced, improve the resolution of display device.
Adopt the identical chip of Structure and luminescence wave band that optical attenuation can be made consistent, improve the color consistency of display screen.
Fluorescent material adopts the mode of chip self light curable to apply, and stable color coordinate, color saturation can be made to improve.
Filling the moulding compound with highly reflective between chip and chip can prevent the light diffusion between adjacent chips from occurring, and improves resolution and the contrast of display.
Integrated drive chips in a package, can solve drive circuit area occupied when display density promotes further needs the problem reduced.
Accompanying drawing explanation
Fig. 1 is the structural representation of LED component of the present invention;
Fig. 2 is the LED chip structure schematic diagram of the embodiment of the present invention 1;
Fig. 3 (a), 3 (b), 3 (c), 3 (d) is the flow chart of fan-out formula wafer-level packaging of the present invention;
Fig. 4 is the LED chip encapsulating structure schematic diagram of the embodiment of the present invention 2;
Fig. 5 is the LED chip encapsulating structure schematic diagram of the embodiment of the present invention 3;
Fig. 6 is the LED chip encapsulating structure schematic diagram of the embodiment of the present invention 4;
Embodiment
Below in conjunction with the drawings and specific embodiments, the super-high density light-emitting diode display part that the present invention proposes is described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only for convenient, aid illustration lucidly.
Core concept of the present invention is, provides a kind of super-high density light-emitting diode display part, comprises substrate and is packaged in the LED chip array on substrate.The present invention adopts fan-out formula wafer-level packaging, reduces package area, improves the resolution of LED display; Each LED chip is the LED chip of the same race that structure is all identical with luminescence band, by applying ruddiness and green glow and blue light fluorescent powder on LED chip respectively, make it glow respectively, green glow and blue light, thus ensure that each LED chip optical attenuation is in use consistent, improve the color developing of display screen; Isolate with moulding compound between chip and chip, can prevent the light diffusion between adjacent chips from occurring like this, improve optical property.The present invention can realize pixel interval and is less than 1mm and even is less than 0.1mm, realizes the performances such as the high integration of light-emitting diode display part, high-resolution, in indoor high-density display screen, projection, wearable display device, has important application.
Please refer to Fig. 1, the super-high density light-emitting diode display part that Fig. 1 provides for the embodiment of the present invention, as Fig. 1
Shown in, the super-high density light-emitting diode display part structure that the embodiment of the present invention provides comprises:
1, substrate 1, described LED chip array adopts fan-out formula wafer-level packaging (FOWLP, fan-outwaferlevelpackaging) or flip-chip packaged on substrate;
2, LED chip 2, described LED chip array is made up of the LED chip that structure is all identical with luminescence band, and they contact with substrate 1 and are electrically connected;
3, light-converting material 301,302 and 303, be respectively red light fluorescent powder, green light fluorescent powder and blue light fluorescent powder, described red light fluorescent powder, green light fluorescent powder, blue light fluorescent powder utilize the mode of chip self light curable to be coated in surface and the surrounding of described LED chip respectively.
The processing procedure of described light-emitting diode display part mainly comprises the following steps:
(1) prepare a substrate, chip array is set on substrate, and at chip perimeter, light-proof material is set to realize the light isolation between chip and chip; Before or after chip is set to substrate, through hole and metal wiring layer are set on substrate;
(2) fluorescent material is arranged on this LED chip array by the mode of chip self light curable.
The concrete structure of light-emitting diode display part is described below by way of multiple embodiment:
Embodiment 1:
Refer to Fig. 1, it is the schematic diagram of super-high density light-emitting diode display part of the present invention, comprises 8x8 pixel, each pixel is made up of 3 unit, and wherein 1 is substrate, and 2 is LED luminescence chips, 301,302 and 303 difference redness, green and blue light transition material.Refer to Fig. 2, Fig. 2 is the structural representation of the LED chip in the single pixel of the embodiment of the present invention 1 in a unit, and this LED chip array adopts fan-out formula wafer-level packaging form.201 is moulding compound, 2 is LED chip, LED chip surface is provided with P type ohmic contact layer 202 and N-type ohmic contact layer 203, metal electrode 204 is separately positioned on P type ohmic contact layer 202 and N-type ohmic contact layer 203 surface, passivation layer 205 is arranged between two electrodes and side is used for avoiding two electrodes directly to contact the short circuit problem caused, at surface of metal electrode, metal wiring layer 206 is set, in moulding compound inside, through hole 207 is set, for the connection of luminescence chip and external drive circuit, in addition, heat dissipation channel 211 is also provided with in moulding compound, the another side of the moulding compound relative with luminescence chip is also provided with metal wiring layer 208, for connecting external drive control circuit, and heating panel 212.The adhesion of layer of silica gel 209 for increasing phosphor powder layer and chip is coated with on the surface, phosphor powder layer 210 at metal wiring layer 206 and passivation layer 205.
Below describe the concrete manufacture method of embodiment of the present invention LED component in detail:
Step (1) comprises following steps:
Step (1.1) is Continuous pressing device for stereo-pattern 302 on one piece of support plate 301, and the upper surface of adhesive tape is used for adhering chip, as Fig. 3 (a).
The good chip 2 of test has electrode one to face down to paste on adhesive tape 302, as Fig. 3 (b) by step (1.2).
Step (1.3) is carried out covering with the space between moulding compound 303 pairs of chips and chip and is filled, as Fig. 3 (c); Then put it in baking oven and be cured, the temperature of baking oven is set as about 175 DEG C, and the time is 7 hours; After having solidified, support plate 301 and adhesive tape 302 are peeled off, as Fig. 3 (d) from system.
Step (1.4) adopts the method for etching to form through hole 207 in moulding compound 201, and carries out hole metallization.Specifically comprise the steps:
Step (1.4.1) adopts the method for etching in moulding compound 201, form through hole 207 and 211.
Step (1.4.2) by PECVD deposited oxide layer, by MOCVD plated metal adhesion layer/barrier/seed layers.And by electrochemical reaction toward depositing metal layers in through hole.
Step (1.4.3) is by the metal in chemico-mechanical polishing or grinding and etching removal flat surfaces.
Step (1.5): metal wiring layer is set in moulding compound upper and lower surface, and chip surface electrode is connected with moulding compound upper surface wiring layer, and be electrically connected by through hole and moulding compound lower surface wiring layer.
Step (1.5.1): at LED chip surface preparation P type ohmic contact layer 202 and N-type ohmic contact layer 203, preparation method is sputtering cooperation photoetching and etching process.
Step (1.5.2): coordinate photoetching and stripping technology with electron beam evaporation, prepare metal electrode 204 at P type ohmic contact layer 202 and N-type ohmic contact layer 203 surface respectively.
Step (1.5.3): between P type ohmic contact layer 202 and two metal electrodes on N-type ohmic contact layer 203 surface and electrode side prepare passivation layer 205.By using chemical vapour deposition (CVD) tube furnace, growing silicon dioxide layer under the high temperature conditions and forming passivation layer, and then by photoetching and etching process, insulating barrier being made default figure.
Step (1.5.4): metal wiring layer 206 is set at moulding compound upper surface and is connected with chip surface electrode 204, wiring layer 208 is set at moulding compound lower surface, and be electrically connected by conductive through hole 207 and moulding compound upper surface wiring layer 206.
Step (1.5.5): at moulding compound lower surface deposition heat dissipating layer 212, be connected with the heat dissipation channel 211 in moulding compound.
Fluorescent material is arranged on this LED chip array by the mode of chip self light curable by step (2);
Step (2.1): prepare red fluorescence powder, green emitting phosphor and blue colour fluorescent powder, and fluorescent material is mixed according to required in certain proportion with silica gel.
Step (2.2): with steel mesh as mask exposed chip surface, cover chip surrounding, silica gel 209 precoating is layed onto LED chip surface, is cured one hour at 150 DEG C.
Step (2.3): red fluorescence powder 210 is coated on the LED chip with silica gel pre-coat layer 209, dries at 40 DEG C, and selectivity is lighted first LED chip and is utilized LED chip self luminescence to be cured.And fluorescent coating being placed in the deionized water of heat, the chip surface realizing only lighting at first covers red fluorescence powder, then toasts.
Step (2.4): green emitting phosphor is coated on the LED chip with silica gel pre-coat layer, dries at 40 DEG C, and selectivity is lighted second batch LED chip and is utilized LED chip self luminescence to be cured.And fluorescent coating being placed in the deionized water of heat, the chip surface realizing only lighting at second batch covers green emitting phosphor, then toasts.
Step (2.5): blue colour fluorescent powder is coated on the LED chip with silica gel pre-coat layer, dries at 40 DEG C, and selectivity is lighted the 3rd batch of LED chip and is utilized LED chip self luminescence to be cured.And fluorescent coating being placed in the deionized water of heat, the chip surface realizing only marking words and phrases for special attention bright the 3rd covers blue colour fluorescent powder, then toasts.
Embodiment 2:
Refer to Fig. 4, Fig. 4 be the embodiment of the present invention 2 substrate on the structural representation of flip LED chips.Fig. 4 is the structural representation of the LED chip in the single pixel of the embodiment of the present invention 2 in a unit, and this LED chip array adopts flip-chip packaged form.401 is substrate, the high reflector of P 402 and the high reflector 403 of N are set on the surface of LED chip 2, on the surface of high reflection layer, metal electrode 404 is set respectively, between two metal electrodes and side passivation layer 405 is set, be used for avoiding two metal electrodes directly to contact the short circuit problem caused, being provided with two wiring layer on substrate 401 surface is 408 and 410 respectively, and metal wiring layer 408 is provided with ubm layer 407, and solder bumps 406 is for connecting chip and substrate.Be etched with through hole 409 in substrate for connecting luminescence chip and control circuit, be provided with optical confinement layer 411 between chip and chip, chip surface is coated with silica gel 412, fluorescent material 413.Heating panel 414 is arranged on the another side of the substrate relative with LED chip.
Below describe the concrete manufacture method of LED component in the embodiment of the present invention 2 in detail:
Step (1) comprises following steps:
Step (1.1): through hole is set in a substrate, and carry out hole metallization.
Step (1.1.1): adopt the method for etching to punch in substrate 401, and carry out hole metallization.
Step (1.1.2) adopts the method for etching to form through hole 409 in substrate 401.
Step (1.1.3): by PECVD deposited oxide layer, by MOCVD plated metal adhesion layer/barrier/seed layers.And by electrochemical reaction toward depositing metal layers in through hole.
Step (1.1.4): by the metal in chemico-mechanical polishing or grinding and etching removal flat surfaces.
Step (1.2): coordinate photoetching and etching process to sputter, arrange metal wiring layer 408 at upper surface of base plate, lower surface arranges metal line 410, and substrate upper and lower surface wiring layer is connected by through hole 409 realization electric connection.
Step (1.3): coordinate photoetching and stripping technology with electron beam evaporation, metal wiring layer 408 is formed ubm layer 407, at base lower surface deposition heat dissipation bonding pad 414.
Step (1.4): form the high reflective ohmic contact layer 402 of P and N pole ohmic contact layer 403 on LED chip, metal electrode 404, passivation layer 405 and salient point soldered ball 406, flip-chip is received on substrate:
Step (1.4.1) is in the preparation high reflector of P 402, LED chip 2 surface and the high reflector 403 of N, and preparation method is sputtering cooperation photoetching and etching process.
Step (1.4.2) prepares metallized metal electrode 404 in the high reflector of P 402 and surface, N high reflector 403, and this metal electrode 404 material can be aluminium or other metal.
Step (1.4.3) coordinates photoetching and etching process to sputter, and prepares passivation layer 405 between electrodes.
Step (1.4.4) forms salient point soldered ball 406 on metal electrode 404 surface of this chip by electroplating technology, and the material of this salient point soldered ball 406 can be the single metals such as gold, also can be multilayer material or alloy.
This LED chip upside-down mounting on substrate 401, makes the salient point soldered ball 406 of this LED chip be connected with the ubm layer 407 on substrate by step (1.4.5).It can be add ultrasonic nation again after pressurized, heated to determine bonding method that this upside-down mounting connects.
Step (1.5): light-proof material is set between LED chip and LED chip and carries out light isolation: light-proof material 411 is coated on whole substrate and exceedes chip 2 height, the method then by striking off makes chip surface expose realization to the light isolation between chip and chip; Then put it in baking oven and be cured, the temperature of baking oven is set as about 175 DEG C, and the time is 7 hours.
Fluorescent material is arranged on this LED chip array by the mode of chip self light curable by step (2):
Step (2.1): prepare red fluorescence powder, green emitting phosphor and blue colour fluorescent powder, and fluorescent material is mixed according to required in certain proportion with silica gel.
Step (2.2): with steel mesh as mask exposed chip surface, cover chip surrounding, silica gel 412 precoating is layed onto LED chip 2 surface, is cured one hour at 150 DEG C.
Step (2.3): red fluorescence powder 413 is coated on the LED chip with silica gel pre-coat layer 412, dries at 40 DEG C, and selectivity is lighted first LED chip and is utilized LED chip self luminescence to be cured.And fluorescent coating being placed in the deionized water of heat, the chip surface realizing only lighting at first covers red fluorescence powder, then toasts.
Step (2.4): green emitting phosphor is coated on the LED chip with silica gel pre-coat layer, dries at 40 DEG C, and selectivity is lighted second batch LED chip and is utilized LED chip self luminescence to be cured.And fluorescent coating being placed in the deionized water of heat, the chip surface realizing only lighting at second batch covers green emitting phosphor, then toasts.
Step (2.5): blue colour fluorescent powder is coated on the LED chip with silica gel pre-coat layer, dries at 40 DEG C, and selectivity is lighted the 3rd batch of LED chip and is utilized LED chip self luminescence to be cured.And fluorescent coating being placed in the deionized water of heat, the chip surface realizing only marking words and phrases for special attention bright the 3rd covers blue colour fluorescent powder, then toasts.
Embodiment 3:
Refer to Fig. 5, Fig. 5 is the structural representation of the LED chip of the embodiment of the present invention 3, and this LED chip array adopts fan-out formula wafer-level packaging form.201 is moulding compound, 2 is LED chip, LED chip surface is provided with P type ohmic contact layer 202 and N-type ohmic contact layer 203, metal electrode 204 is separately positioned on P type ohmic contact layer 202 and N-type ohmic contact layer 203 surface, passivation layer 205 arranges and is used between two electrodes avoiding two electrodes directly to contact the short circuit problem caused, at surface of metal electrode, metal wiring layer 206 is set, arrange the connection of through hole 207 for luminescence chip and external drive circuit in moulding compound inside, the another side of the moulding compound relative with luminescence chip is also provided with metal wiring layer 208.209 is silica gel, for increasing the adhesion between fluorescent material and chip.210 is fluorescent material, and 511 is ubm layer, and it is underfill epoxide resin material that solder bumps 512 is used for connecting LED chip and external drive circuit 513,514.
Below describe the concrete manufacture method of embodiment of the present invention LED component in detail:
As different from Example 1, the present embodiment does not arrange heat dissipation channel 211 and heat dissipation bonding pad 212.
Step (1) concrete steps are as follows:
Step (1.1) ~ (1.5) are identical with step (1.1) ~ (1.5) in embodiment 1.
Step (1.6) arranges ubm layer 511 on metal wiring layer 508 surface.
IC chip 513 is passed through salient point soldered ball 512 face-down bonding to substrate back by step (1.7), thus LED and external drive circuit are coupled together, and its bumps soldered ball is obtained by electroplating technology.
Step (1.8) utilizes drop-coating to be coated onto by encapsulating compound 514 in the surface of IC chip 513 and the space of chip and substrate; and then it is hardening by hot curing process; curing time is 30min, and curing temperature is 150 DEG C, realizes the encapsulating to chip and related elements and protection.
Step (2) is consistent with (2) in embodiment 1.
Embodiment 4:
Refer to Fig. 6, Fig. 6 be the embodiment of the present invention 4 substrate on the structural representation of flip LED chips.401 is substrate, the high reflector of P 402 and the high reflector 403 of N are set on the surface of LED chip 2, on the surface of high reflection layer, metal electrode 404 is set respectively, passivation layer 405 is set between two metal electrodes, be used for avoiding two metal electrodes directly to contact the short circuit problem caused, be provided with two wiring layer 408 and 410 on substrate 401 surface, metal wiring layer 408 is provided with ubm layer 407, and solder bumps 406 is for connecting chip and substrate.Be etched with through hole 409 in substrate for connecting luminescence chip and control circuit, be provided with optical confinement layer 411 between chip and chip, chip surface is coated with silica gel 412, fluorescent material 413.Metal wiring layer is provided with ubm layer 614, LED luminescence unit be connected with external drive circuit 616 by solder bumps 615,617 is underfill.
Below describe the concrete manufacture method of embodiment of the present invention LED component in detail:
As different from Example 2, the present embodiment does not arrange heat dissipation bonding pad 414, and in addition, step (1) concrete steps are as follows:
Step (1.1) ~ (1.5) are identical with step (1.1) ~ (1.5) in embodiment 2.
Step (1.6) arranges ubm layer 614 on the surface of metal wiring layer 410.
IC chip is passed through salient point soldered ball 615 face-down bonding to substrate back by step (1.7), thus LED and external drive circuit 616 are coupled together, and wherein solder bumps is obtained by electroplating technology.
Epoxy resin underfill 617 is injected into one or two limits of IC chip 616 by step (1.8), and underfill 617 material flows and fills the space between IC chip and substrate.And then hardening by hot curing process, curing time is 30min, and curing temperature is 150 DEG C, realizes the encapsulating to chip and related elements and protection.
(2) in step (2) embodiment 2 are consistent.
In sum, the invention provides a kind of super-high density light-emitting diode display part, comprise substrate and be packaged in the LED chip array on substrate, chip array comprises the LED chip of some uniform intervals arrangement.The present invention adopts fan-out-type wafer-level packaging technique, reduces package area, improves the resolution of LED display; Each LED chip is the LED chip of the same race that structure is identical with luminescence band, ruddiness, green glow and blue light fluorescent powder is applied respectively by utilizing the mode of chip self light curable on LED chip, make it glow respectively, green glow and blue light, thus ensure that each LED chip optical attenuation is in use consistent, improve the color developing of display screen; The present invention can realize pixel interval and is less than 1mm and even is less than 0.1mm, realizes the performances such as the high integration of light-emitting diode display part, high-resolution, in indoor high-density display screen, projection, wearable display device, has important application.
The present invention is not limited to above-mentioned execution mode, if do not depart from the spirit and scope of the present invention to various change of the present invention or distortion, if these are changed and distortion belongs within claim of the present invention and equivalent technologies scope, then the present invention is also intended to comprise these changes and distortion.
Claims (13)
1. a super-high density light-emitting diode display part, it is characterized in that this light-emitting diode display part includes a plurality of LED luminescence chip, chip is provided with the light-converting material applied by the mode of self light curable.
2. a kind of super-high density light-emitting diode display part according to claim 1, is characterized in that: carry out light isolation by moulding compound between chip and chip.
3. a kind of super-high density light-emitting diode display part according to claim 2, it is characterized in that, molding compound material is thermoplastic poly phthalic amide, the highly reflective materials such as thermosetting epoxy resin.
4. a kind of super-high density light-emitting diode display part according to claim 1, be is characterized in that: on different LED chip, be provided with the light-converting material applied by the mode of self light curable more than a kind of color.
5. a kind of super-high density light-emitting diode display part according to claim 1, is characterized in that, described LED chip unit is the LED chip unit of the same race that structure is identical with luminescence band.
6. a kind of super-high density light-emitting diode display part according to claim 1, is characterized in that, the substrate of described chip is Sapphire Substrate.
7. a kind of super-high density light-emitting diode display part according to claim 1, is characterized in that: light-converting material is fluorescent material and epoxide-resin glue or silica-gel mixture.
8. a kind of super-high density light-emitting diode display part according to claim 1, is characterized in that: light-converting material is quantum dot fluorescence material and epoxide-resin glue or silica-gel mixture.
9. a manufacture method for super-high density light-emitting diode display part, is characterized in that: comprise the steps:
(1) prepare a substrate, chip array is set on substrate, and at chip perimeter, light-proof material is set to realize the light isolation between chip and chip; Before or after chip is set to substrate, through hole and metal wiring layer are set on substrate.
(2) fluorescent material is arranged on this LED chip array by the mode of chip self light curable.
10. the manufacture method of a kind of super-high density light-emitting diode display part according to claim 9, is characterized in that:
Step (1) comprises following steps:
Step (1.1) is Continuous pressing device for stereo-pattern on one piece of support plate, and the upper surface of adhesive tape is used for adhering chip.
The good chip of test has electrode one to face down to paste on adhesive tape by step (1.2).
Step (1.3) is carried out covering with moulding compound to the space between chip and chip and is filled; Then put it in baking oven and be cured; After having solidified, support plate and adhesive tape are peeled off from system.
Step (1.4) forms through hole in moulding compound, and carries out hole metallization.
Step (1.5) arranges metal wiring layer in moulding compound upper and lower surface, and chip surface electrode is connected with moulding compound upper surface wiring layer, and is electrically connected by through hole and moulding compound lower surface wiring layer.
The manufacture method of 11. a kind of super-high density light-emitting diode display parts according to claim 9, is characterized in that:
Described step (1) comprises following steps:
Step (1.1) arranges through hole in a substrate, and carries out hole metallization.
Step (1.2) arranges metal wiring layer in substrate upper and lower surface, and makes substrate upper and lower surface wiring layer realize being electrically connected by through hole.
Step (1.3) arranges ubm layer on substrate.
Step (1.4) arranges metal electrode and ubm layer on LED chip, the ubm layer of chip or substrate arranges conductive salient point, is received on substrate by flip-chip.
Step (1.5) arranges light-proof material and carries out light isolation between LED chip and LED chip: be coated on by light-proof material on whole substrate and exceed chip height, and the method then by striking off makes chip surface expose realization to the light isolation between chip and chip; Then put it in baking oven and be cured.
The manufacture method of 12. a kind of super-high density light-emitting diode display parts according to claim 9, it is characterized in that: also comprise following steps between step (1) and step (2): the chip of Drive and Control Circuit and device are arranged on moulding compound or base lower surface, make it to realize being electrically connected with LED.
The manufacture method of 13. a kind of super-high density light-emitting diode display parts according to claim 9, is characterized in that: described step (2) comprises the steps:
Step (2.1) prepares red fluorescence powder, green emitting phosphor and blue colour fluorescent powder.
Step (2.2) as mask exposed chip surface with steel mesh, covers chip surrounding, silica gel precoating is layed onto LED chip surface, at 150 DEG C, is cured one hour.
Step (2.3) red fluorescence powder is coated to there is silica gel pre-coat layer LED chip on, dry at 40 DEG C, and selectivity is lighted first LED chip and is utilized LED chip self luminescence to be cured.And fluorescent coating being placed in the deionized water of heat, the chip surface realizing only lighting at first covers red fluorescence powder, then toasts.
Step (2.4) green emitting phosphor is coated to there is silica gel pre-coat layer LED chip on, dry at 40 DEG C, and selectivity is lighted second batch LED chip and is utilized LED chip self luminescence to be cured.And fluorescent coating being placed in the deionized water of heat, the chip surface realizing only lighting at second batch covers green emitting phosphor, then toasts.
Step (2.5) blue colour fluorescent powder is coated to there is silica gel pre-coat layer LED chip on, dry at 40 DEG C, and selectivity is lighted the 3rd batch of LED chip and is utilized LED chip self luminescence to be cured.And fluorescent coating being placed in the deionized water of heat, the chip surface realizing only marking words and phrases for special attention bright the 3rd covers blue colour fluorescent powder, then toasts.
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