CN112310267A - LED lamp source module and flip-chip welding method - Google Patents

LED lamp source module and flip-chip welding method Download PDF

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Publication number
CN112310267A
CN112310267A CN202011312168.8A CN202011312168A CN112310267A CN 112310267 A CN112310267 A CN 112310267A CN 202011312168 A CN202011312168 A CN 202011312168A CN 112310267 A CN112310267 A CN 112310267A
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China
Prior art keywords
led chip
led
pad
carrier plate
substrate
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Pending
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CN202011312168.8A
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Chinese (zh)
Inventor
周波
何至年
唐其勇
朱弼章
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Jiangxi Zhaochi Guangyuan Technology Co ltd
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Jiangxi Zhaochi Guangyuan Technology Co ltd
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Priority to CN202011312168.8A priority Critical patent/CN112310267A/en
Publication of CN112310267A publication Critical patent/CN112310267A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

The invention provides an LED (light emitting diode) lamp source module and a flip-chip welding method, wherein the LED lamp source module comprises a substrate and at least one LED chip arranged on the substrate, an anode bonding pad and a cathode bonding pad are arranged on the surface of the substrate, the LED chip comprises an anode pin and a cathode pin, the anode pin is welded with the anode bonding pad, the cathode pin is welded with the cathode bonding pad, and the distance between the anode bonding pad and the cathode bonding pad corresponding to one LED chip is larger than the distance between the anode pin and the cathode pin. In the LED lamp source module provided by the invention, because the distance between the anode bonding pad and the cathode bonding pad corresponding to one LED chip is larger than the distance between the anode pin and the cathode pin, the bonding pad distance of the substrate does not need to be adjusted to be completely consistent with the electrode pin distance of the LED chip, so that the conventional substrate structure can select the small-sized LED chip, the cost is reduced, and the product volume is reduced.

Description

LED lamp source module and flip-chip welding method
Technical Field
The invention relates to the technical field of LED display, in particular to an LED lamp source module and a flip-chip welding method.
Background
At present, an LED lamp source module generally comprises a substrate and an LED chip, the LED chip is transferred to a bonding pad of the substrate through a suction nozzle of a die bonder during preparation, and the LED chip is welded relative to the bonding pad after the suction nozzle is moved away. In order to ensure the mounting accuracy of the LED chip, avoid the problems of poor soldering such as open circuit, material flying, tilting, etc., and be limited by the absorption accuracy of the die bonder, a bonding pad completely consistent with the electrode pin of the LED chip is usually disposed on the substrate.
However, for a small-size LED chip with low cost, the pitch of the electrode pins is small, and the pad pitch on the substrate needs to be reduced synchronously, so that it is difficult to set the pad pitch required by the small-size LED chip on the substrate according to the current process level, which results in that the small-size LED chip cannot be selected for use by the LED lamp source module, thereby resulting in high cost and large product volume.
Disclosure of Invention
The invention aims to provide an LED lamp source module capable of selecting a small-size LED chip.
Another objective of the present invention is to provide a flip chip bonding method suitable for manufacturing the LED lamp source module.
In order to achieve the purpose, the invention provides the following technical scheme:
as a first aspect, the present invention relates to an LED lamp source module, including a substrate and at least one LED chip disposed on the substrate, wherein a positive pad and a negative pad are disposed on a surface of the substrate, the LED chip includes a positive pin and a negative pin, the positive pin is welded to the positive pad, the negative pin is welded to the negative pad, and a distance between the positive pad and the negative pad corresponding to one LED chip is greater than a distance between the positive pin and the negative pin.
Preferably, the LED chip is disposed at a midpoint of a connection line between the positive pad and the negative pad.
Preferably, a projection of the positive electrode pin on a plane where the positive electrode pad is located at least partially overlaps with the positive electrode pad, and a projection of the negative electrode pin on a plane where the negative electrode pad is located at least partially overlaps with the negative electrode pad.
Preferably, the LED chips are provided in plurality, and the distance between two adjacent LED chips is the same.
Furthermore, the LED lamp source module also comprises packaging glue which is arranged on the substrate and covers the LED chip.
As a second aspect, the present invention further relates to a flip chip bonding method, which is suitable for preparing the LED lamp source module, and the flip chip bonding method includes the following steps: coating solder on a pad of a substrate; adsorbing an LED chip above the bonding pad by using a carrier plate and contacting the LED chip with the solder; fixing the carrier plate relative to the substrate; melting the solder by high-temperature heating to solder the LED chip on the bonding pad; and removing the carrier plate.
Preferably, the method of adsorbing the LED chip to the upper side of the pad and contacting the solder by using the carrier includes: a plurality of welding pads are arranged; the LED chips are correspondingly distributed on the protective film one by one according to the positions of the bonding pads; a carrier plate is adopted to adsorb a plurality of LED chips simultaneously; removing the protective film at the bottom of the LED chip; and simultaneously transferring the LED chips to the upper parts of the bonding pads through the carrier plate and contacting the solder.
Optionally, the method of adsorbing the LED chip to the upper side of the pad and contacting the solder by using the carrier includes: the number of the substrates is multiple, and the substrates are arranged according to preset positions; the LED chips are correspondingly arranged on the protective film one by one according to the positions of the substrates; a carrier plate is adopted to adsorb a plurality of LED chips simultaneously; removing the protective film at the bottom of the LED chip; and simultaneously transferring the LED chips to the upper parts of the bonding pads of the substrates through the carrier plate and contacting the solder.
Preferably, before the LED chip is attached to the upper side of the pad and contacted with the solder by using the carrier plate, the method further comprises: and configuring a carrier plate, and arranging adhesive for adhering the LED chip on the bottom surface of the carrier plate.
Further, after removing the carrier plate, the method further comprises the following steps: and arranging packaging glue covering the LED chip on the substrate.
Compared with the prior art, the scheme of the invention has the following advantages:
1. in the LED lamp source module provided by the invention, the distance between the anode bonding pad and the cathode bonding pad corresponding to one LED chip is larger than the distance between the anode pin and the cathode pin, and the bonding pad distance of the substrate does not need to be adjusted to be completely consistent with the electrode pin distance of the LED chip, so that the conventional substrate structure can select the small-sized LED chip, the cost is reduced, and the product volume is reduced.
2. In the flip-chip welding method provided by the invention, the LED chip can be transferred by adopting the carrier plate, and the position of the LED chip can be limited and fixed by the carrier plate, so that the LED chip is kept fixed in the heating welding process, and thus the small-size LED chip can be stably welded on the conventional substrate structure, the product cost is greatly reduced, and the production yield is improved.
3. According to the flip-chip welding method provided by the invention, the LED chips can be transferred and fixed in batch through the support plate, so that the welding process of a plurality of LED chips can be completed simultaneously, the installation precision of the plurality of LED chips is effectively ensured, the production efficiency is improved, and the production period is shortened.
Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
The foregoing and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a schematic structural diagram of an LED light source module according to an embodiment of the present invention;
FIG. 2 is a step diagram of a flip chip bonding method provided by the present invention;
FIG. 3 is a flow chart of the fabrication process for transferring the LED chip in the flip chip bonding process shown in FIG. 2;
fig. 4 is a flow chart of the manufacturing process for bonding the LED chip in the flip chip bonding method shown in fig. 2.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative only and should not be construed as limiting the invention.
It will be understood by those within the art that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. It will be understood that when an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. As used herein, the term "and/or" includes all or any element and all combinations of one or more of the associated listed items.
As shown in fig. 1, an embodiment of the present invention provides an LED lamp source module 1, including a substrate 11 and at least one LED chip 12 disposed on the substrate 11, a pad 111 for soldering the LED chip 12 is disposed on a surface of the substrate 11, the LED chip 12 includes a pin 121 for transmitting a current signal, and the pin 121 is soldered to the pad 111 through a solder 13.
Preferably, the bonding pad 111 includes a positive bonding pad 1111 and a negative bonding pad 1112, the leads 121 include a positive lead 1211 and a negative lead 1212, the positive lead 1211 is welded to the positive bonding pad 1111, the negative lead 1212 is welded to the negative bonding pad 1112, and a distance between the positive bonding pad 1111 and the negative bonding pad 1112 corresponding to one LED chip 12 is larger than a distance between the positive lead 1211 and the negative lead 1212, that is, the bonding pad distance of the substrate 11 does not need to be adjusted to be completely consistent with the electrode lead distance of the LED chip 12, so that the conventional substrate structure can select the small-sized LED chip, thereby reducing the cost and the product volume.
Preferably, the LED chip 12 is disposed at a midpoint of a connection line between the positive pad 1111 and the negative pad 1112, so that a welding area of the positive pin 1211 relative to the positive pad 1111 is equal to a welding area of the negative pin 1212 relative to the negative pad 1112, thereby avoiding the problems of tilting and loosening of the LED chip 12 caused by different welding strengths of the positive pin 1211 and the positive pin 1211, and improving the mounting strength of the LED chip 12.
Preferably, the projection of the positive pin 1211 on the plane where the positive pad 1111 is located at least partially overlaps the positive pad 1111, and the projection of the negative pin 1212 on the plane where the negative pad 1112 is located at least partially overlaps the negative pad 1112, so as to ensure that at least a part of the structure of each of the positive pin 1211 and the negative pin 1212 is supported directly above the pad 111, thereby ensuring the stability of the LED chip 12.
Further, the LED light source module 1 further includes an encapsulation adhesive 14 disposed on the surface of the substrate 11 and covering the LED chip 12, the encapsulation adhesive 14 may be made of an organic silicon material to have a high refractive index and a high light transmittance, so as to increase the luminous flux of the LED chip 12, and the viscosity is low, so that the encapsulation and the compression molding are easy to remove bubbles, and the LED light source module 1 has good durability and reliability.
In other embodiments, the LED chips 12 may further include a plurality of LED chips 12, the LED chips 12 are uniformly distributed on the substrate 11, and the distance between two adjacent LED chips 12 is the same, so as to improve the brightness of the LED lamp source module 1 and ensure uniform light emission.
As shown in fig. 2, as a second aspect, an embodiment of the present invention further provides a flip chip bonding method, which is suitable for preparing the LED lamp source module 1, where the flip chip bonding method includes the following steps:
step S1: solder 13 is coated on the pad 111 of the substrate 11.
The bonding pads 111 are arranged on the substrate 11 in advance according to the number and position requirements of the LED chips 12, the LED chips 12 include positive pins 1211 and negative pins 1212, and the bonding pads 111 include positive bonding pads 1111 and negative bonding pads 1112 arranged in one-to-one correspondence with the positive pins 1211 and the negative pins 1212. When the bonding pad 111 is arranged, the distance between the positive bonding pad 1111 and the negative bonding pad 1112 corresponding to one LED chip 12 is larger than the distance between the positive pin 1211 and the negative pin 1212, the bonding pad distance of the substrate 11 does not need to be adjusted to be completely consistent with the electrode pin distance of the LED chip 12, and further the bonding pad 111 is formed on the substrate 11 without adopting equipment with higher precision, so that the conventional substrate structure can select small-sized LED chips, the cost is reduced, and the product volume is reduced.
Further, before the solder 13 is coated, the pad 111 should be cleaned, so as to avoid the surface of the pad 111 from being defective or contaminated to cause the uniformity of the tensile strength and the bonding strength of the pad 111 to be poor, and ensure the conductivity and the reliability of the pad 111.
Specifically, solder 13 is the tin cream, will solder 13 coat in the top surface of pad 111 and form the bump structure that middle height, periphery are low under the effect of solder 13 self tension, make solder 13 can be fixed in by oneself on the pad 111, difficult outflow pad 111 ensures adjacent two insulation between the pad 111.
Step S2: the carrier plate 2 is adopted to absorb the LED chip 12 to the upper part of the bonding pad 111 and contact with the solder 13.
Firstly, a carrier plate 2 is configured, an adhesive 21 for adhering the LED chip 12 is disposed on the bottom surface of the carrier plate 2, and the adhesive force of the adhesive 21 to the LED chip 12 should be greater than the gravity of the LED chip 12, so that the carrier plate 2 meets the requirements of absorbing and transferring the LED chip 12.
Preferably, the adhesive glue 21 is a UV photolysis glue 1, which is prepared by adding an appropriate amount of plasticizer, tackifying resin and photosensitive resin to a viscous monomer with a low glass transition temperature, has the property of a pressure-sensitive adhesive in a normal state, and can rapidly lose efficacy after being exposed to ultraviolet light, so as to separate the LED chip 12 from the carrier plate 2.
Referring to fig. 3, when a plurality of bonding pads 111 are disposed on the substrate 11, firstly, the plurality of LED chips 12 are disposed on the protective film 3 in a one-to-one correspondence manner according to the positions of the plurality of bonding pads 111, then the carrier plate 2 is moved to a position right above the plurality of LED chips 12, the carrier plate 12 is pressed downward to fully bond the bonding glue 21 with the LED chips 12, then the plurality of LED chips 12 are simultaneously adsorbed by the bonding glue 21 on the carrier plate 2, and finally the protective film 3 at the bottom of the LED chips 12 is removed. At this time, the plurality of LED chips 12 are arranged on the carrier plate 2 according to the positions of the plurality of pads 111, and the plurality of LED chips 12 can be simultaneously transferred to the upper side of the pads 111 through the carrier plate 2 and contacted with the solder 13, so that batch chip transfer is realized, the soldering process of the plurality of LED chips 12 can be simultaneously completed, the mounting accuracy of the plurality of LED chips 12 is effectively ensured, the production efficiency is improved, and the production cycle is reduced.
In another embodiment, a plurality of substrates 11 may also be provided, the plurality of substrates 11 are arranged according to a preset position, the plurality of LED chips 12 are firstly arranged on the protective film 3 in a one-to-one correspondence according to the positions of the plurality of substrates 11, and the plurality of LED chips 12 can also be synchronously transferred onto the plurality of substrates 11 through the carrier plate 2, so as to realize the simultaneous production and manufacturing of the plurality of LED lamp source modules 1.
Specifically, the carrier plate 2 is adopted to adsorb the LED chip 12 to the upper side of the pad 111, so that the LED chip 12 is in contact with the solder 13, and at the same time, the LED chip 12 and the pad 111 should be controlled to have a certain distance, so that an accommodating space of the solder 13 is reserved between the pin 121 of the LED chip 12 and the pad 111, the solder 13 can be fully soldered, and the situation that the solder 13 is extruded out of the pad 111 due to the mutual abutting between the pin 121 and the pad 111 is avoided.
Step S3: the carrier plate 2 is fixed relative to the substrate 11.
Referring to fig. 4, after the carrier plate 2 and the LED chips 12 on the carrier plate 2 are synchronously moved to the upper side of the substrate 1, the carrier plate 2 may be fixed by a mechanical device or a related limiting structure, so that the carrier plate 2 is fixed relative to the substrate 11.
Specifically, the support plate 2 is used for limiting and fixing the LED chip 12, so that the LED chip 12 can be fixed relative to the substrate 11, the LED chip 12 can be kept fixed in the subsequent welding process, the deviation of the mounting position of the LED chip 12 is avoided, the distance between the bonding pads of the substrate 11 does not need to be adjusted to be completely consistent with the distance between the electrode pins of the LED chip 12, the small-size LED chip can be stably welded on the conventional substrate structure, the product cost is greatly reduced, and the production yield is improved.
Step S4: the solder 13 is melted by high-temperature heating to solder the LED chip 12 to the pad 111.
Fig. 4 shows that after the carrier board 2 is fixed to the substrate 11, the solder 13 is heated at a high temperature to melt the solder 13, and the leads 121 of the LED chip 12 and the pads 111 are wrapped by the molten solder 13 to form a soldering structure, so that the LED chip 12 is soldered to the pads 111.
Preferably, it is right to choose the reflow soldering machine that the temperature is even stable and control is accurate to select the LED chip 12 to carry out reflow soldering, guarantee welding quality, promote LED chip 12 is relative the bonding integrality of pad 111 to it is right to prevent that thermal shock from causing the damage to LED chip 12.
It should be noted that, in the process of heating the solder 13, the relative position between the carrier plate 2 and the substrate 11 should be kept unchanged, and the bonding glue 21 is prepared by reasonably controlling the heating position and selecting a suitable material, so as to ensure that the bonding glue 21 on the carrier plate 2 is not affected by high temperature to fail, further ensure that the LED chip 12 is not moved in the heating process, and achieve the purpose of accurately controlling the mounting position of the LED chip 12.
Step S5: the carrier plate 2 is removed.
And after the LED chip 12 is soldered on the soldering pad 111 and the structure to be soldered is cooled, performing failure treatment on the adhesive 21, and finally removing the carrier plate 2.
During the removal of the carrier plate 2, the LED chips 12 should not be caught or bumped, and the mounting positions of the LED chips 12 are kept unchanged. Moreover, the failure treatment of the bonding glue 21 needs to be thoroughly cleaned up the bonding glue 21 on the surface of the LED chip 12, so that the bonding glue 21 is prevented from remaining on the surface of the LED chip 12, and the service life and the light emitting effect of the LED chip 12 are ensured.
Further, after the carrier plate 2 is removed, the surface of the substrate 11 is provided with the encapsulation adhesive 14 covering the LED chip 12, and the encapsulation adhesive 14 may be liquid silicone rubber made of organic silicon as a main raw material, so as to have good high and low temperature resistance and electrical insulation capability, excellent dielectric property and moisture resistance, and good refractive index and light transmittance.
And finally, completing the preparation process of the LED lamp source module 1, wherein the flip-chip welding method has high welding precision and high production efficiency, so that the yield of the LED lamp source module 1 can be greatly improved, the production period can be shortened, the use of small-size LED chips can be realized, the production cost can be reduced, the product volume can be reduced, and the product competitiveness can be improved.
The foregoing is only a partial embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.

Claims (10)

1. The LED lamp source module comprises a substrate and at least one LED chip arranged on the substrate, wherein an anode bonding pad and a cathode bonding pad are arranged on the surface of the substrate, the LED chip comprises an anode pin and a cathode pin, the anode pin is welded with the anode bonding pad, the cathode pin is welded with the cathode bonding pad, and the LED lamp source module is characterized in that the distance between the anode bonding pad and the cathode bonding pad of the corresponding LED chip is larger than the distance between the anode pin and the cathode bonding pad.
2. The LED lamp source module of claim 1, wherein the LED chip is disposed at a midpoint of a connecting line between the positive pad and the negative pad.
3. The LED lamp source module of claim 1, wherein a projection of the positive electrode lead on a plane where the positive electrode pad is located at least partially overlaps the positive electrode pad, and a projection of the negative electrode lead on a plane where the negative electrode pad is located at least partially overlaps the negative electrode pad.
4. The LED lamp source module according to claim 1, wherein the LED chips are arranged in a plurality, and the distance between two adjacent LED chips is the same.
5. The LED light source module of claim 1, further comprising an encapsulant disposed on the substrate and covering the LED chip.
6. A flip chip bonding method suitable for preparing the LED lamp source module according to any one of claims 1 to 5, the flip chip bonding method comprising the following steps:
coating solder on a pad of a substrate;
adsorbing an LED chip above the bonding pad by using a carrier plate and contacting the LED chip with the solder;
fixing the carrier plate relative to the substrate;
melting the solder by high-temperature heating to solder the LED chip on the bonding pad;
and removing the carrier plate.
7. The flip chip bonding method of claim 6, wherein the step of attaching the LED chip to the bonding pad by using a carrier plate and contacting the LED chip with the solder comprises:
a plurality of welding pads are arranged;
the LED chips are correspondingly distributed on the protective film one by one according to the positions of the bonding pads;
a carrier plate is adopted to adsorb a plurality of LED chips simultaneously;
removing the protective film at the bottom of the LED chip;
and simultaneously transferring the LED chips to the upper parts of the bonding pads through the carrier plate and contacting the solder.
8. The flip chip bonding method of claim 6, wherein the step of attaching the LED chip to the bonding pad by using a carrier plate and contacting the LED chip with the solder comprises:
the number of the substrates is multiple, and the substrates are arranged according to preset positions;
the LED chips are correspondingly arranged on the protective film one by one according to the positions of the substrates;
a carrier plate is adopted to adsorb a plurality of LED chips simultaneously;
removing the protective film at the bottom of the LED chip;
and simultaneously transferring the LED chips to the upper parts of the bonding pads of the substrates through the carrier plate and contacting the solder.
9. The flip chip bonding method of claim 6, further comprising, before the step of using a carrier plate to attach the LED chip over the pad and in contact with the solder:
and configuring a carrier plate, and arranging adhesive for adhering the LED chip on the bottom surface of the carrier plate.
10. The flip chip bonding method of claim 6, further comprising, after removing the carrier plate:
and arranging packaging glue covering the LED chip on the substrate.
CN202011312168.8A 2020-11-20 2020-11-20 LED lamp source module and flip-chip welding method Pending CN112310267A (en)

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Application Number Priority Date Filing Date Title
CN202011312168.8A CN112310267A (en) 2020-11-20 2020-11-20 LED lamp source module and flip-chip welding method

Publications (1)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115565893A (en) * 2022-12-06 2023-01-03 深圳宏芯宇电子股份有限公司 Packaging method, packaging equipment and plastic package element
WO2024011667A1 (en) * 2022-07-15 2024-01-18 广州华星光电半导体显示技术有限公司 Display panel and mobile terminal

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024011667A1 (en) * 2022-07-15 2024-01-18 广州华星光电半导体显示技术有限公司 Display panel and mobile terminal
CN115565893A (en) * 2022-12-06 2023-01-03 深圳宏芯宇电子股份有限公司 Packaging method, packaging equipment and plastic package element

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