CN110621438A - 用于管芯附接的焊料材料和方法 - Google Patents
用于管芯附接的焊料材料和方法 Download PDFInfo
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- CN110621438A CN110621438A CN201880031665.5A CN201880031665A CN110621438A CN 110621438 A CN110621438 A CN 110621438A CN 201880031665 A CN201880031665 A CN 201880031665A CN 110621438 A CN110621438 A CN 110621438A
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- solder
- thermal conductivity
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C11/00—Alloys based on lead
- C22C11/06—Alloys based on lead with tin as the next major constituent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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- B23K35/262—Sn as the principal constituent
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- C22C—ALLOYS
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- C—CHEMISTRY; METALLURGY
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Abstract
本发明提供了一种焊料材料,该焊料材料包含焊料合金和热导率修改组分。焊料材料的体热导率在约75W/m‑K和约150W/m‑K之间,并且可用于增强焊料的热导率,从而在电子封装应用中允许最佳的热传递和可靠性。
Description
技术领域
本发明整体涉及用于电子封装的焊料材料,该焊料材料包含热导率修改组分以增强电子器件的热耗散并增强其可靠性。
背景技术
为了将半导体器件用于电子产品,必须将其电互连、机械互连并在一些情况下热互连到半导体封装。这种机械互连可以使用糊状或膜状的粘合剂材料(例如,聚合物材料)来实现。电连接可以通过在半导体器件的电输出和半导体封装的输入之间附接细金线或突片来实现。当需要热传导时,诸如针对功率器件,一种常规策略涉及在组装时用设置在半导体器件和半导体封装之间的焊料代替聚合物机械粘合剂。
焊膏是电子组件组装中最公认的焊料形式。表面安装应用通常取决于焊膏以将部件附接到电路板。然而,焊膏可能不是唯一解决方案。当与通孔部件或需要比印刷锡膏可供应的焊料提供更多焊料的极大型器件一起工作时,尤其如此。印刷电路板通常涉及需要多于一种形式的焊料的混合技术。因此,焊膏可以用于表面安装部件,并且焊料预成型件可以用于将引线附接在通孔部件上。
焊料预成型件是形状成型的焊料,其被设计为极其均匀的,其中每个预成型件始终向接头递送相同体积的焊料。也可以将焊料预成型件形成为各种形状和尺寸以适应特定要求,包括垫圈、圆盘、正方形、矩形和框架,其中尺寸范围从极小到非常大,这取决于完成接头所需的焊料体积。这些形状还可以与窄焊料股线连接以便在以特定图案施加多个预成型件时使用。股线被设计成在回流时会破裂并芯吸回焊料块,从而允许更快且更准确的放置。
焊料预成型件也可以与焊膏结合使用以强化焊接头。例如,如果焊膏未提供足够的焊料体积以满足接头的强度和覆盖要求,则可能期望使用预成型件。
工业上还存在持续的压力,以减小成本、增加产量和良率并提高封装半导体器件的性能和可靠性。
通常为焊料或填充的聚合物材料的管芯附接材料,用于将半导体管芯连接到引线框架、其他管芯、散热器等。取决于连接的要求,填料可以是导电的或不导电的。以前管芯附接材料主要提供机械粘结。然而,随着半导体器件已经发展到更加复杂和强大的用途,它们在操作期间也会产生更多的热量,并且废热的传导已成为管芯附接材料的期望特征。
对于高功率应用,由于其高热传导,焊料是所选择的管芯附接材料。然而,焊料也具有一些有害的特性。焊料的一个主要缺点是,在管芯粘结期间和后续的热偏移期间,焊料都具有在粘结线中形成空隙的趋势。这些孔隙会在管芯下产生不良热导率的热点,并增加对后粘结检查的要求以确保可接受的结果。
高温焊料合金广泛用于管芯附接应用、功率半导体和光学器件封装、倒装芯片封装、散热器接合以及在操作期间生成的热量的耗散很重要的其他应用。焊料材料使得能够将发热电子器件粘结到衬底以便形成机械连接和电连接。
用于这些应用的当前行业标准焊料通常需要高铅焊料(例如,90重量%至95重量%的Pb)和Au基共晶焊料合金(例如,80Au20Sn焊料)。管芯附接过程通常涉及使用粘合剂粘结或焊料接合将硅管芯或芯片附接到引线框架或其他衬底。焊接是用于将管芯附接到引线框架的优选方法,特别是对于功率器件而言,这是因为与聚合物粘合剂相比,焊料合金具有更高的载流能力和更好的热导率,其有利于耗散由器件生成的热量。
用于管芯附接的焊料的液相线温度通常至少为280℃,以便允许后续通过在200℃至250℃的温度下进行回流焊接而用共晶SnPb或无铅SnAgCu(SAC)焊料将封装器件安装在印刷电路板上。
用于管芯附接的最广泛使用的焊料包含高Pb合金,例如,95Pb5Sn、88Pb10Sn2Ag和92.5Pb5Sn2.5Ag。然而,由于铅的毒性,在许多应用中禁止使用铅。尽管用于第一级封装应用的高Pb焊料合金由于缺乏其可靠替代品而不受有害物质指令(RoHS)法规的现行限制,但这些领域中的到无铅材料的转化将最终实现并且是高度期望的。可以使用无铅共晶Au-Sn(280℃)、Au-Si(363℃)和Au-Ge(356℃)合金作为管芯附接焊料,但其成本高昂。尽管Sn-Sb、Bi-Ag、Zn-Sn和Zn-Al系统中的其他高温无铅焊料已知是候选项,但每种焊料都有其自身的缺点。例如,Sn-Sb合金和Zn-Sn合金的固相线温度通常太低,Zn-Al合金是高度腐蚀性和易氧化性的,并且Bi-Ag合金具有脆性和有关低导热率/电导率的问题。
因此,可以看出,当前使用的许多焊料材料都面临其性能极限,从而损害器件可靠性并限制其使用寿命。在本领域中仍然需要能够改进器件可靠性的改进焊料材料,特别是对于高功率电子部件。
随着电子装置的小型化和制造高功率电子部件的需求,对于远离发热半导体器件的热耗散的要求变得非常关键。
管芯附接和其他电互连件中使用的焊料执行多种功能,诸如提供机械强度以将零件接合在一起,提供电流路径,或提供热界面作为用于使器件中生成的热量耗散到散热器的路线。焊料材料的物理性质(诸如热导率、电导率、拉伸强度、剪切强度、蠕变及其与器件和电路板形成良好界面的能力)是确定其在现实生活应用中的整体性能的重要因素。这些性质还需要在典型的操作条件下随时间推移保持稳定。
电子器件(特别是高功率器件,诸如LED以及高功率放大器和开关等)生成需要被热耗散的大量热量。在此类器件的操作期间,热和电界面材料会在长时间段内处于高温。在高温操作期间,由于器件、衬底和互连材料之间的热膨胀系数(CTE)不匹配,因此互连材料还面临高机械应力。因此,为了实现器件长期工作,互连材料以及界面在这些条件下应具有稳定的机械、热和电性能。
金属和合金中的热能主要通过电子运输。通常,金属和合金的热导率随温度增加而表现出减少。这通常是多种因素组合的结果,诸如电子-电子散射、电子-原子散射、以及来自合金内和界面处的晶界的电子散射。热导率的变化是不期望的。金属和合金的电阻率也可随着温度的增加而变化。焊料合金中的电阻率变化也是不期望的。
因此,在为电子器件和系统设计可靠的高温封装时,合适的互连材料和处理技术仍然是主要挑战。宽温度波动和高温会显著增加施加在器件上的热机械应力。在升高的温度下,焊接强度会降低,而变形或蠕变会加速,从而导致在每个负载周期期间的变形增加以及疲劳寿命减小。已建立的焊接技术未能克服此类问题,也无法提供可靠的高温操作。
主题以引用方式整体并入本文的Liu等人的美国专利No.8348139描述了用于高温无铅焊接应用的层压复合预成型箔。
主题以引用方式整体并入本文的Tozelbaev等人的美国专利No.8,034,662描述了半导体芯片热界面材料方法,该方法包括在第一半导体芯片上放置包含支撑结构的热界面材料层。然而,该参考文献仅限于网状物的使用,该网状物不允许在金属氧化物和助熔剂的相互作用期间形成的气体在回流期间自由移动到焊接头周边。
因此,在本领域中仍然需要能够将热量从发热半导体器件耗散出去的无铅焊料合金,其表现出足够高的热导率并且克服现有技术的缺陷。
发明内容
本发明的目的是提供焊料合金,该焊料合金能够将热量从发热半导体器件耗散出去。
本发明的另一个目的是提供表现出足够热导率的焊料预成型件。
本发明的又一个目的是提供包含热导率修改组分的焊料预成型件。
为此,在一个实施方案中,本发明整体涉及焊料,包括:
A)焊料合金,以及
B)热导率修改组分,
其中焊料材料的体热导率在约75W/m-K和约150W/m-K之间。
附图说明
为了更全面地理解本发明,参考以下结合附图进行的描述,其中:
图1描绘了根据本发明的一个实施方案的其中铜线被嵌入焊料合金内的如本文描述为具有增强热导率的焊料材料的示意图,以及根据本发明的一个实施方案的其中铜线被嵌入焊料合金中并且还包含包覆芯层的焊料材料的视图。
图2描绘了根据本发明的一个方面的焊料材料预成型件的光学图像。
图3描绘了图2的预成型件的X射线图像,示出了嵌入线。
图4描绘了根据本发明的预成型件的光学图像,示出了嵌入线。
图5A和图5B描绘了使用本发明的焊料材料来附接到衬底的硅管芯的SEM图像。
具体实施方式
本发明整体涉及用于电子封装的焊料材料,该焊料材料包含焊料合金和热导率修改组分。因此,在一个实施方案中,本发明整体涉及包含热导率修改组分的焊料预成型件。
如本文所用,除非上下文另有明确说明,否则“一个”、“一种”和“该”均指单数和复数指代。
如本文所用,术语“约”是指可测量的值,诸如参数、量、持续时间等,并且旨在包括相对于具体所述值的+/-15%或更小的变化、优选地+/-10%或更小的变化、更优选地+/-5%或更少的变化、甚至更优选地+/-1%或更少的变化,还更优选为+/-0.1%或更少的变化,只要此类变化适合于在本文所述的发明中执行。此外,还应当理解,修饰语“约”所指的值本身在本文中具体公开。
如本文所用,为了便于描述,使用诸如“在...下方”、“之下”、“下部”、“之上”、“上部”、“前”、“后”等空间相对术语来一个元素或特征结构与另外的一个或多个元素或一个或多个特征结构的关系。还应当理解,术语“前”和“后”并非旨在进行限制,并且旨在在适当的情况下可互换。
如本文所用,术语“包括(comprises)”和/或“包括(comprising)”指定所述的特征结构、整数、步骤、操作、元件和/或部件的存在,但不排除一个或多个其他特征结构、整数、步骤、操作、元件、部件和/或其组的存在或添加。
如本文所述,本发明涉及可用于改进半导体至衬底界面的性能的材料、过程和设计,由此增加热量远离界面和发热电子器件的流动。
在一个实施方案中,本发明整体涉及焊料材料,包括:
A)焊料合金,以及
B)热导率修改组分,
其中无铅焊料材料的体热导率在约75W/m-K和约150W/m-K之间。
在一个优选实施方案中,焊料材料呈焊料预成型件的形式。
如本文所述,在一个实施方案中,焊料材料具有高热导率,该热导率高于电子封装应用中使用的传统焊料。在一个实施方案中,复合焊料材料的热导率比传统焊料大至少约5%,或比传统焊料大至少约10%,比传统焊料大高达约50%,并且甚至更高,这取决于焊料合金的热导率和热导率修改组分的热导率。
在电子封装应用中,焊料材料在衬底和部件之间提供了冶金粘结。如本文所述,复合焊料材料具有足以提供连接而不会产生过多热障的热导率是至关重要的。
在一个实施方案中,焊料材料的焊料合金包括需要调整热导率的常规焊料材料,并且本发明可以与许多普通焊料合金一起使用以增强焊料材料的热导率和机械强度从而超出焊料本身的能力,作为示例而非限制,包含诸如高铅、SnAg、SAC、铟和铟合金以及SnPb的普通管芯附接焊料。从广义上讲,本发明可以与期望增强系统的热导率和机械强度的任何焊料合金一起使用。因此,作为示例而非限制,该焊料合金可以包含锡、铜、银、铋、锑、铟、金锡、铅、锗和镍中的一种或多种。在一个实施方案中,焊料合金可以包括如de AvilaRibas等人的美国专利No.2018/0102464或WO2017/192517中描述的焊料合金,这些专利中的每一个的主题以引用方式整体并入本文。
重要的是,通过添加本文所述的热导率增强组分,焊料合金能够针对热传递和可靠性进行优化。
表1列出了一些普通焊料合金的一些示例,其中许多用于管芯附接应用和封装器件附接应用。热导率值的快速检查示出了铟在80W/m-K下具有最高值之一。然而,铟具有为156℃的相对较低的熔化温度,这限制了其在非常高功率取向的管芯附接应用和封装器件附接应用中的使用。
表1.合适的焊料合金的示例
从表1中还可以看出,典型热导率值可以低至19W/m-K。这些焊料合金都能够提供可靠的连接,其中接头的热阻足够低以确保许多传统电子器件的良好可靠性。然而,其低热导率使其不适合用于大功率电子封装应用。
对于热传递和可靠性,本发明中描述的焊料材料的体性质和界面性质是最佳的。为了增加通过焊料合金的热流,本发明的焊料材料包含热导率增强组分。该热导率增强组分的热导率优选地为至少约100W/m-K,更优选地为至少约200W/m-K,甚至更优选地为至少约300W/m-K,并且甚至更优选地为至少约400W/m-K。
本发明的发明人已经发现,材料的选择对回流期间的气体形成以及接头的机械强度具有深远的影响。例如,裸铜将比镀锡铜产生更多的气体。金也不是期望的材料,因为金会溶解到焊料系统中并使焊接头变脆,从而导致在使用中的过早失效,特别是在功率循环取向的应用中。同样,无电镀的铝也不会润湿至焊料,从而导致网状物对焊料系统的结构强度没有贡献。然而,如果铝被镀有镍和锡,则它会润湿并与焊料形成金属间化合物,从而增强焊料系统机械强度。相比之下,如果金属线没有润湿以及与焊料形成金属间化合物,则系统的机械强度将比没有金属线的焊料的机械强度更差。
在优选实施方案中,热导率增强组分包括嵌入线,因为已经发现,嵌入线增加焊料的体热导率并且还提供用于增强横向热耗散的路径。这对于消除具有不均匀热量生成的器件上的热点而言是特别重要的。线也有利于控制焊接头的厚度和均匀性。
因此,在优选实施方案中,热导率增强组分由线组成,并且线选自银、铜上锡、铝上镍上锡、钯和铂。此外,由于上述原因,裸铜、裸铝和金也不适合用于本发明。
焊料中的热导率增强组分的量取决于特定的应用,并因此取决于焊料材料的期望体热导率。热导率增强组分的量还将取决于焊料合金的特定组成和所选的热导率增强组分的类型。
例如,在一个优选实施方案中,焊料材料呈预成型件的形式,该预成型件包括约30重量%至约95重量%的焊料合金和约70重量%至约5重量%的热导率增强组分,更优选地,约40重量%至约90重量%的焊料合金和约60重量%至约10重量%的热导率增强组分。通过将一根或多根线嵌入焊料材料中来实现热导率增强组分的期望量。如上所述,焊料材料的体热导率优选地在约75W/m-K至约150W/m-K的范围内,更优选地在约90W/m-K和约110W/m-K之间。
如图1所示,热导率增强组分优选地以线的形式合并到焊料中。
本发明有几个主要的增强优于专利8,034,662中描述的系统。首先,如上所讨论,本发明的热导率增强组分呈线的形式。相比之下,美国专利No.8,034,662使用嵌入焊料中的网状物来设置最小焊料厚度(粘结线)并限制在熔化/回流期间的焊料移动。通过限制回流期间的焊料移动,衬底和管芯的金属化将形成限制焊料的系统。只要控制粘结线的厚度,焊料就会润湿并粘附到金属化表面并停留在期望位置。
然而,在本发明中不期望使用网状嵌入式支撑结构,因为使用网状物产生的焊接头在机械上不如基于线的焊接头。首先,网状结构不允许在金属氧化物和助熔剂的相互作用期间形成的气体在回流期间自由移动到焊接头周边。通过如本发明中那样使用线,存在一个方向,由此在回流期间形成的气体可以逸出焊接头,从而导致接头中的较少空隙。
在本发明中,在矩形焊接头的情况下,线平行于较短的尺寸取向以产生较短的气体逸出路径。这很重要,因为如果在焊料固化期间存在气体,则将会在焊接头中产生空隙,从而损害焊接头的机械完整性,减小有效的热导率,并减小焊料附接的强度。用于管芯附接的高度空隙化焊接头的剪切测试导致将管芯与焊料分离所需的较低剪切力。如果空隙位于管芯热点下方,则其可能会由于该热点而导致管芯的过早失效,这就是关于空隙状态的许多工业规格限制总空隙并且也限制单个最大空隙的原因。
本发明的线可以平行使用并且平行线可以更紧密地封装在一起。与美国专利No.8.034,662所示的网状物或小柱相比,这导致更高百分比的高热导率材料被嵌入焊料系统中。
最后,如上所讨论,已经发现用于热导率增强组分的材料的选择是关键的。相比之下,美国专利No.8,034,662没有区分网状金属材料的类型,并且被列举为合适的示例性材料包含镍、金、铂、银、钯、铜、铝、这些的组合等。
图2描绘了根据本发明的一个方面的焊料材料预成型件的光学图像。此外,图3描绘了图2的预成型件的X射线图像,示出了嵌入线。图4描绘了根据本发明的预成型件的光学图像,示出了嵌入线。
本文所述的高热导率焊料材料可以通过任何适用的方法制造并施加到衬底。例如,可以通过轧制或铸造将线合并到焊料合金中。其他方法对于本领域技术人员也是已知的并且可应用于本发明。
为了确保良好的可加工性,可以通过电镀、溅射或其他已知技术用焊料合金对线进行预涂。该焊料合金优选是与基础焊料合金相同的焊料合金以确保不存在有关兼容性的任何问题。
线的直径可以在约5微米至约200微米之间变化,更优选地在约25微米至约150微米之间变化,并且甚至更优选地在约50微米至约125微米之间变化。所得的焊接头厚度与许多电子应用中的典型厚度相同。
可以通过将焊膏和/或焊料预成型件施加到衬底上来创建焊接头。在回流过程期间,焊料熔化并在衬底和部件之间创建接头。图5A和图5B描绘了使用本发明的焊料材料来附接到衬底的硅管芯的SEM图像。
本文所述的焊料材料可用于所有已知的组装过程,包括但不限于回流炉和真空炉。
现在将结合以下非限制性示例来讨论本发明。
实施例1:
该示例示出了与仅为焊料的预成型件相比,嵌入铜线的预成型件的所得热导率变化的计算。在此示例中,将直径为μm的三个铜线嵌入尺寸为1000×1000×200μm的焊料预成型件中。
系统体积:1000μm×1000μm×200μm=200×106μm3
铜体积:3×Πr2h=3×Π(50μm)2×1000μm=23.5×106μm3
焊料体积:(200-23.5)×106μm3
铜热导率(CuTC):400W/m-K
焊料热导率(焊料TC):50W/m-K
(Cu体积)/总体积×CuTC+(焊料体积)/总体积×焊料TC=总(体)热导率=91W/m-K。
实施例2.
实施例2证明了具有包括银线的热导率增强组分的典型较高熔化温度焊料(诸如SnAg3.5焊料)的热导率的增强。表2示出了通过将5个银线添加到焊料,系统的所得热导率增加到88.1W/m-K,从而超过铟的值。此外,该系统的熔化温度为221℃,其能够支持为175℃的最大管芯操作温度。相比之下,铟合金只能支持为约110℃的管芯操作温度。
用镀锡铜线代替银线会导致略小的整体热导率值,但仍会导致如用SnAg3.5焊料合金那样的增强热导率而没有热增强。
表2.具有银线的SnAg3.5合金的热导率的增强
因此可以看出,在焊料合金材料中使用热导率增强组分增强系统的热导率并允许最佳的热传递和可靠性。
最后,还应当理解,以下权利要求旨在涵盖本文所述的本发明的所有一般特征和特定的特征以及在语言上可能落入它们之间的本发明的范围的所有陈述。
Claims (18)
1.一种焊料材料,包括:
a)焊料合金,和
b)热导率修改组分,
其中所述焊料材料的体热导率在约75W/m-K和约150W/m-K之间。
2.根据权利要求1所述的焊料材料,其中所述焊料合金的热导率在约20W/m-K和约70W/m-K之间。
3.根据权利要求2所述的焊料材料,其中所述焊料合金的热导率在约25W/m-K和约60W/m-K之间。
4.根据权利要求1所述的焊料材料,其中所述焊料合金选自高铅合金、SnAg合金、SnAgCu合金、铟和铟合金、SnPb合金以及上述中的一种或多种的组合。
5.根据权利要求1所述的焊料材料,其中所述热导率修改组分呈线的形式。
6.根据权利要求5所述的焊料材料,其中所述热导率修改组分选自银、铜上锡、铝上镍上锡、钯和铂。
7.根据权利要求5所述的焊料材料,其中所述热导率修改组分不是裸铜、裸铝或金。
8.根据权利要求5所述的焊料材料,其中热导率增强组分的热导率为至少100W/m-K。
9.根据权利要求8所述的焊料材料,其中所述热导率增强组分的热导率为至少200W/m-K。
10.根据权利要求9所述的焊料材料,其中所述热导率增强组分的热导率为至少300W/m-K。
11.根据权利要求1所述的焊料材料,其中所述焊料材料的体热导率在约80W/m-K和约110W/m-K之间。
12.根据权利要求1所述的焊料材料,其中所述焊料材料呈焊料预成型件的形式。
13.根据权利要求1所述的焊料材料,其中无铅焊料材料包括在约30重量%至约95重量%之间的所述焊料合金和约70重量%至约5重量%的所述热导率增强组分。
14.根据权利要求5所述的焊料材料,其中所述线包括平行使用的多根线并且所述平行线紧密地封装在一起。
15.一种包括根据权利要求1所述的焊料材料的焊接头。
16.一种包括根据权利要求5所述的焊料材料的焊接头。
17.根据权利要求16所述的焊接头,其中所述焊接头是矩形的,并且所述线平行于所述矩形的较短尺寸取向,其中所述线创建用于气体逸出的较短路径。
18.一种在衬底和部件之间制成焊接头的方法,所述方法包括以下步骤:
a)将根据权利要求1所述的焊料材料施加到衬底;
b)将部件设置在所述焊料材料上;以及
c)使所述焊料回流以在所述衬底和所述部件之间创建所述焊接头。
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5127969A (en) * | 1990-03-22 | 1992-07-07 | University Of Cincinnati | Reinforced solder, brazing and welding compositions and methods for preparation thereof |
US20020190388A1 (en) * | 2001-06-14 | 2002-12-19 | Eytcheson Charles Tyler | Method of mounting a circuit component and joint structure therefor |
US20040200879A1 (en) * | 2001-05-24 | 2004-10-14 | Fry's Metals, Inc. | Thermal interface material and solder preforms |
US20070013054A1 (en) * | 2005-07-12 | 2007-01-18 | Ruchert Brian D | Thermally conductive materials, solder preform constructions, assemblies and semiconductor packages |
CN100444365C (zh) * | 2001-05-24 | 2008-12-17 | 弗莱氏金属公司 | 热界面材料 |
US20110096507A1 (en) * | 2009-10-24 | 2011-04-28 | Kester, Inc. | Microelectronic thermal interface |
CN106536108A (zh) * | 2014-04-17 | 2017-03-22 | 贺利氏材料新加坡私人有限公司 | 含有锌作为主要组分和铝作为合金金属的无铅共晶钎料合金 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5088007A (en) | 1991-04-04 | 1992-02-11 | Motorola, Inc. | Compliant solder interconnection |
US6523608B1 (en) | 2000-07-31 | 2003-02-25 | Intel Corporation | Thermal interface material on a mesh carrier |
US7416922B2 (en) * | 2003-03-31 | 2008-08-26 | Intel Corporation | Heat sink with preattached thermal interface material and method of making same |
JP2005288526A (ja) * | 2004-04-02 | 2005-10-20 | Toshiba Corp | はんだ材及び半導体装置 |
US20060104855A1 (en) * | 2004-11-15 | 2006-05-18 | Metallic Resources, Inc. | Lead-free solder alloy |
JP4054029B2 (ja) * | 2005-03-24 | 2008-02-27 | 株式会社東芝 | はんだ材とそれを用いた半導体装置 |
WO2009131913A2 (en) | 2008-04-21 | 2009-10-29 | Honeywell International Inc. | Thermal interconnect and interface materials, methods of production and uses thereof |
US8034662B2 (en) | 2009-03-18 | 2011-10-11 | Advanced Micro Devices, Inc. | Thermal interface material with support structure |
US8348139B2 (en) | 2010-03-09 | 2013-01-08 | Indium Corporation | Composite solder alloy preform |
US20110265979A1 (en) | 2010-04-30 | 2011-11-03 | Sihai Chen | Thermal interface materials with good reliability |
CN102554488B (zh) * | 2010-12-16 | 2015-11-25 | 北京有色金属研究总院 | Led封装用高导热焊锡浆 |
US9010616B2 (en) | 2011-05-31 | 2015-04-21 | Indium Corporation | Low void solder joint for multiple reflow applications |
JP2013018010A (ja) | 2011-07-07 | 2013-01-31 | Fuji Electric Co Ltd | 鉛フリーはんだ |
JP2013180100A (ja) * | 2012-03-02 | 2013-09-12 | Akitoshi Ogoshi | 転がし着踵用踵底 |
US10821557B2 (en) | 2016-05-06 | 2020-11-03 | Alpha Assembly Solutions Inc. | High reliability lead-free solder alloy |
US20180102464A1 (en) | 2016-10-06 | 2018-04-12 | Alpha Assembly Solutions Inc. | Advanced Solder Alloys For Electronic Interconnects |
-
2018
- 2018-05-11 EP EP18798010.7A patent/EP3621767B1/en active Active
- 2018-05-11 WO PCT/US2018/032325 patent/WO2018209237A1/en unknown
- 2018-05-11 JP JP2019561311A patent/JP7084419B2/ja active Active
- 2018-05-11 US US16/612,883 patent/US11842974B2/en active Active
- 2018-05-11 CN CN201880031665.5A patent/CN110621438B/zh active Active
- 2018-05-14 TW TW107116329A patent/TWI709201B/zh active
-
2023
- 2023-09-19 US US18/370,150 patent/US20240021565A1/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5127969A (en) * | 1990-03-22 | 1992-07-07 | University Of Cincinnati | Reinforced solder, brazing and welding compositions and methods for preparation thereof |
US20040200879A1 (en) * | 2001-05-24 | 2004-10-14 | Fry's Metals, Inc. | Thermal interface material and solder preforms |
CN100444365C (zh) * | 2001-05-24 | 2008-12-17 | 弗莱氏金属公司 | 热界面材料 |
US20020190388A1 (en) * | 2001-06-14 | 2002-12-19 | Eytcheson Charles Tyler | Method of mounting a circuit component and joint structure therefor |
US20070013054A1 (en) * | 2005-07-12 | 2007-01-18 | Ruchert Brian D | Thermally conductive materials, solder preform constructions, assemblies and semiconductor packages |
US20110096507A1 (en) * | 2009-10-24 | 2011-04-28 | Kester, Inc. | Microelectronic thermal interface |
CN106536108A (zh) * | 2014-04-17 | 2017-03-22 | 贺利氏材料新加坡私人有限公司 | 含有锌作为主要组分和铝作为合金金属的无铅共晶钎料合金 |
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