TW201907522A - 用於晶粒附著的焊料及方法 - Google Patents
用於晶粒附著的焊料及方法 Download PDFInfo
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- TW201907522A TW201907522A TW107116329A TW107116329A TW201907522A TW 201907522 A TW201907522 A TW 201907522A TW 107116329 A TW107116329 A TW 107116329A TW 107116329 A TW107116329 A TW 107116329A TW 201907522 A TW201907522 A TW 201907522A
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- solder
- thermal conductivity
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C11/00—Alloys based on lead
- C22C11/06—Alloys based on lead with tin as the next major constituent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
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- B23K35/264—Bi as the principal constituent
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- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/302—Cu as the principal constituent
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C13/00—Alloys based on tin
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
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- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
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Abstract
一種焊料包含焊料合金及導熱性改良元件,該焊料有介於約75 W/m-K至約150W/m-K之間的本體熱導率並且能夠用於增強焊料的熱導率,以允許在電子封裝的應用中有最佳的熱傳遞和可靠性。
Description
本發明大致涉及一種用於電子封裝的焊料,其包含導熱性改良元件,以增強電子裝置的散熱性及增強其可靠性。
為了使半導體裝置使用於電子產品,它必須是電氣地、機械地並且在一些情況下與半導體封裝熱連接。這機械式互連可使用糊狀或薄膜形式的黏合材料來實現(例如:一種聚合材料),電氣連接可以經由在半導體裝置的電輸出端和半導體封裝的輸入端之間的薄金線或薄片來實現,當需要熱傳導時,像是功率裝置,一種常見的策略涉及在組裝時,安置在半導體裝置和半導體封裝之間的聚合物機械黏合劑,改以焊料來取代。
焊膏在電子組裝中是最公認的焊料形式,表面安裝的應用一般取決於焊膏將元件附著到電路板上,然而焊膏可能不是唯一的解決方案,尤其是當使用通孔元件或非常大的裝置,其需要的焊料多於印刷焊膏所提供的,通常印刷電路板涉及混合技術,其需要超過一種形式的焊料,從而焊膏可以用於表面安裝元件,並且可以使用焊劑預製品將引線附著到通孔元件上。
焊劑預製品形成焊料的形狀是非常均勻的,其每個預成型將相同體積的焊料一致性地輸送到接頭。焊料預製可以形成各種形狀及尺寸以符合特定需求,其包含墊圈形、圓盤形、正方形、長方形、以及框架形,尺寸範圍從極小到相當大,其取決於完成接合所需要的焊料體積。當多個預成型以特定模式應用時,這些形狀也可以與窄的焊料股連接來使用。這些股線設計成在回流時分裂並且芯吸回焊料塊,以允許更快速和更精準的定位。
焊料預製也可以與焊膏結合使用以強化焊點,例如:如果焊膏不能提供足夠的焊料體積來滿足焊點的強度及覆蓋要求,則可能需要使用焊料預製。
在工業中還有持續的壓力來降低成本、提高生產量及產率、以及提高封裝半導體裝置的性能及可靠性。
晶粒附著材料,其通常是焊料或是填充式聚合物材料,是用於將半導體晶粒連接到引線框架、其他晶粒、散熱片等,取決於連接的需求,填充物可以是導電的或不導電的。先前,晶粒附著材料主要提供機械性結合,然而,隨著半導體裝置進步到更複雜及更強大的用途,在操作中也變得更加發熱,而餘熱的傳導成為晶粒附著材料的重要特徵。
對於高功率的應用,由於焊料的高導熱性,其成為晶粒附著材料的首選,然而焊料也有一些不利的特徵,焊料的一個主要缺點是在晶粒接合期間和隨後的熱偏移期間中,其傾向於在黏合線中形成空隙,這些空洞會在晶粒下形成導熱性不良的熱點,並且增加焊後檢查的需求以確保可以接受的結果。
高溫焊料合金廣泛使用於晶粒附著的應用、功率半導體及光學裝置的封裝、倒裝晶片的封裝、散熱片接合、以及其他的應用,在其運行過程中使所產生的熱散失是很重要的,焊料能將發熱電子裝置接合到基板上以產生機械性和電氣性的連接。
目前這些應用的工業標準焊料一般需要高鉛焊料(例如:90-95 wt.% 鉛)及金類的共晶焊料合金(例如:80金20錫 焊料)。晶粒附著過程通常涉及連接矽晶粒或矽晶片至引線框或其他基板,其使用黏合劑或焊料接合,焊接是將晶粒附著於引線框的首選方法,特別是對於功率裝置而言,其與聚合黏合劑相比,因更高的電流承載能力和焊接合金的較佳導熱性,這有利於消散裝置產生的熱。
用於晶粒附著的焊料一般具有至少280°C的液相溫度,以允許隨後在印刷電路板上安裝封裝裝置時,其在200°C至250°C溫度下的焊接回流中,有共熔的SnPb或無鉛SnAgCu (SAC)的焊料。
最廣泛用於晶粒附著的焊料包含高鉛合金,例如:95Pb5Sn、88Pb10Sn2Ag、以及 92.5Pb5Sn2.5Ag。然而鉛的使用由於其毒性在許多的應用中被禁止,儘管用於一級封裝應用的高鉛合金因為缺乏可靠的替代品,而豁免了現行有害物質限制指令(RoHS)的規定,這些領域向無鉛材料的轉換最終將得到實施,並且非常可取,無鉛共晶熔的Au-Sn (280°C)、Au-Si (363°C)、及Au-Ge (356°C) 合金可以作為晶粒附著的焊料,但是他們的成本是高昂的。儘管在Sn-Sb、Bi-Ag、Zn-Sn和 Zn-Al的系統中的其他高溫無鉛銲料也是所知的候選者,每個都有自身的缺點,例如:Sn-Sb 和 Zn-Sn合金的固相溫度通常太低、Zn-Al合金具有高腐蝕性和易氧化性、及Bi-Ag合金具有脆性和低熱導率/低電導率。
因此可以看出許多目前使用的焊料正面臨其能力的限制,因而連累了設備的可靠性並限制其使用壽命。本領域乃需要改進的焊料,其能改進裝置的可靠性,特別是對於高功率的電子元件。
隨著電子設備的小型化及需要製造大功率的電子元件,對發熱半導體元件的散熱要求變的非常關鍵。
使用在晶粒附著及其他電性接合中的焊料執行多種功能,像是提供機械強度來將部件連接在一起、為電流提供路徑、或是提供熱介面作為裝置中產生的熱量消散到散熱器的路徑。焊料的物理性質像是導熱性、導電性、伸張強度、抗切強度、潛變、以及與裝置和電路板形成良好介面的能力,是決定在實際應用中其總功效的重要因素,在一般的運行條件之下,這些特性也需要隨時保持穩定。
電子裝置,特別像是LED的高功率元件及高功率放大器跟開關等,產生大量需要消散的熱量,在操作這些裝置的過程中,熱介面及電介面的材料長時間處在高溫狀態,在高溫操作期間,由於在裝置、基板和互連材料之間的熱膨脹係數(CTE)不匹配,該互連材料還面臨高機械應力,因此為了使裝置長時間運行,互連材料及介面在這些條件下,應該具有穩定的機械性、導熱性及導電性。
在金屬及合金中的熱能主要透過電子來傳輸,一般來說,金屬和合金隨著溫度提高而顯示出導熱性的下降,這通常是多種因素相結合的結果,像是電子-電子散射、電子-原子散射、以及來自合金內和介面處之晶界的電子散射。導電性的改變是不可取的,金屬和合金的電阻性也會隨著溫度的升高而改變。焊料合金的電阻率變化也是不可取的。
因此在設計針對電子裝置和電子系統的可靠高溫封裝,合適的互連材料和加工技術乃是主要挑戰,溫度的搖擺和高溫基本上增加了施加在裝置上的熱機械應力,在高溫下,焊料的強度會隨著其變形或潛變加速而下降,導致每次加載循環期間變形的增加以及疲勞壽命降低,已經建立的焊接技術未能克服這些問題並且未能提供可靠的高溫操作。
U.S. Pat. No. 8,348,139 to Liu et al.,其主題內容經由引用併入本文, 描述了用於高溫無鉛焊接應用的層板複合型預成箔。
U.S. Pat. No. 8,034,662 to Tozelbaev et al.,其主題內容經由引用併入本文,描述一種半導體晶片熱介面材料的方法,其包含將支撐結構的熱介面材料層放置在第一半導體晶片上,然而在金屬氧化跟回流時通量的交互作用期間,該參考文獻限於使用不允許自由移動到形成氣體的焊點周邊的網孔。
因此在本領域中乃需要無鉛焊料合金,其能從發熱半導體裝置進行熱消散,以表現出足夠的高導熱性並且克服現有技術的缺陷。
本發明的一目的是提供一種焊料合金,其能從發熱半導體裝置進行熱消散。
本發明的另一個目的是提供一種焊劑預製品,其展現出足夠的導熱性。
本發明的再一個目的是提供一種焊劑預製品,其包含導熱性改良元件。
為此,在一實施例中,本發明通常涉及一種焊料,其包含:
(A)一種焊料合金,以及
(B)一種導熱性改良元件
其中該焊料有一介於約75W/m-K至約150 W/m-K之間的本體熱導率。
本發明大致涉及一種使用在電子封裝的焊料,該焊料包含一種焊料合金及一種導熱性改良元件,因此在一個實施例中,本發明大致涉及含有導熱性改良元件的焊劑預製品。
除非上下文另外有明確指定,否則如本文所使用的“一”、“一”和“該”係指單數和複數的指示物。
如本文所用的術語“約”是指可測量的數值,例如參數、數量、持續時間等,並且意味著來自特地引用的值並包含其+/-15%或更小的偏差、優選地+/-10%或更小的偏差、更優選地+/-5%或更小的偏差、甚至是更優選地+/-1%或更小的偏差、或更優選地+/-0.1%或更小的偏差,到目前為止這些偏差在本文描述的發明中被恰當地執行。此外,還應理解修飾語 “約”所指的值本身在本文中特別揭露。
如本文所用的空間相對術語,像是“在...之下”、“在...之下”、“較低”、“在...之上”、“較高”、“前”、“後”及其類似術語,是為了易於描述一個元件或特徵與另一個元件或特徵的關係,還應理解的是術語“前”和“後”不是為了要限制,並且在適當的情況下是可以互換的。
如本文所用的術語“包含”和/或“包含”,指定了所述的特徵、整體、步驟、操作、元件和/或部件的存在,但不排除存在或另一個或多個其他特徵、整體、步驟、操作、元件、部件、和/或其組合的存在。
如本文所述,本發明涉及可使用於改善半導體至基板介面的性能之材料、製程和設計,從而增加了從介面和發熱電子裝置離開的熱量流動。
在一個實施例中,本發明大致涉及一種焊料,其包含:
(A)一焊料合金,以及
(B)一導熱性改良元件
其中該無鉛焊料有一介於約75 W/m-K及約150 W/m-K之間的本體熱導率。
在一個優選實施例中,該焊料是焊劑預製品的形式。
如本文所述在一實施例中,該焊料有一高熱導率,該熱導率高於電子封裝應用中所使用的傳統焊料,在一實施例中,複合材料的熱導率比傳統焊料高至少約5%,或至少比傳統焊料高約10%、比傳統焊料高出約高達50%,並且取決於焊料合金的熱導率和導熱性改良元件的熱導率而更高。
在電子封裝的應用中,焊料在基板和元件之間提供冶金鍵。如本文所述,重要的是複合焊料具有足以提供連接的熱導率而不會產生過多的熱屏障。
在一實施例中,焊料的焊料合金包含需要調整熱導率的傳統焊料,而本發明可以與許多常用焊料合金一起使用,以提高焊料的熱導率和機械強度來超越焊料本身的能力,其包含常見的晶粒附著焊料像是:高鉛、SnAg、SAC、銦和銦合金、以及SnPb,此作為例子而非限制,廣義上本發明可與需要加強熱導率和機械強度的任何焊料合金一起使用。因此該焊料合金可能包含錫、銅、銀、鉍、銻、銦、金錫、鉛、鍺和鎳中的一種或多種,此作為例子而非限制,在一實施例中,焊料合金可能包含在美國專利公開第2018/0102464號或 WO2017/192517中所述的焊料合金,其均授予de Avila Ribas等人,其本文中每一個主題內容經由引用整體併入。
重要的是經由添加本文所述的導熱性增強元件,該焊料合金能對熱傳遞和可靠性進行優化。
表1列出了一些常見的焊料合金的例子,其中許多被用於晶粒附著和封裝裝置附著應用,其對導熱值的快速檢視說明了銦在80W / m-K時具有一最高值,然而銦具有156℃的相對較低的熔點,這限制了它在非常高功率導向的晶粒附著和封裝裝置附著應用的使用。 表1 適合焊料合金的例子
從表1中,還可以看出典型的熱導率可以低至19 W/m-K。這些焊料合金都能提供可靠的連接,其連接處的熱電阻夠低以確保許多傳統電子設備的良好可靠度,然而他們的低熱導率使其不適用於高功率電子封裝應用。
本發明中所描述焊料的整體性質和界面性質對於熱傳遞及可靠度是最佳的。為了增加流過焊料合金的熱,本發明的焊料包含導熱性增強元件,該導熱性增強元件優選地具有至少約100 W/m-K的熱導率,更優選地至少約200 W/m-K,甚至更優選地至少約300W / m-K,和甚至更優選地至少約400W / m-K。
本發明的發明人已經發現材料的選擇對回流期間氣體的形成和接頭的機械強度有深遠的影響。例如裸銅會產生比鍍錫銅更多的氣體,黃金也不是理想的材料,因為它會溶解到焊料系統中並使焊點脆化,導致在使用中的過早失效,特別是在功率循環面向的應用中,同樣的沒有電鍍的鋁不會潤濕焊料,導致網孔對焊料系統的結構強度沒有貢獻。然而如果鋁經由鎳和錫的電鍍,它會濕潤焊料並與焊料形成金屬間化合物,其增強了焊接系統的機械強度。相反的,如果金屬線沒有濕潤焊料且與焊料形成金屬間化合物,則該系統的機械強度比沒有金屬線的焊料差。
在優選的實施例中,導熱性增強元件包含嵌入的引線,因為已經發現嵌入的引線增加了焊料的本體熱導率並提供一條增強橫向散熱的路徑。這對消除裝置上具有不均勻熱生成的熱點特別重要,這些引線也有利於控制焊點的厚度和均勻性。
因此,在優選的實施例中,導熱性增強元件由引線組成,並且引線係選自由銀、銅鍍錫、鋁鍍鎳再鍍錫、鈀及鉑所組成的群組。此外,由於上述原因,裸銅、裸鋁和金不適用於本發明。
在焊料中導熱性增強元件的量取決於特定的應用,以及因此所期望的焊料本體熱導率。導熱性增強元件的量也將取決於所選擇的特定焊料合金組成以及導熱性增強元件的類別。
例如,在一個優選的實施例中,焊料呈現預製品的形式,其包含約30 wt.% 至約 95 wt.%的焊料合金及約70 wt. % 至約 5 wt.%的導熱性增強元件,更優選地包含約40 wt.%至約 90 wt.%的焊料合金及約60 wt.% 至約 10 wt.% 的導熱性增強元件,經由將一根或多根引線嵌入到焊料中來實現期望的導熱性強化元件的量。如上所述,焊料的本體熱導率優選地在約75 W/m-K至約 150 W/m-K的範圍內,更優選地在約90W / m-K至約110W / m-K的範圍內。
如第1圖所示,導熱性增強元件102係優選地以線的形式被結合到焊料101中。
與美國專利公告第8,034,662號中所描述的系統相比,本發明有幾個主要的改進。首先如上所述,本發明的導熱性增強元件102係以引線的形式呈現。相對的,在美國專利公告第8,034,662號中,係使用嵌入焊料中的網孔來設定最小的焊料厚度(焊線) 並限制熔化/回流期間的焊料移動。經由限制回流期間的焊料移動,其基板和晶粒的金屬化將形成限制焊料的系統,只要控制焊線的厚度,該焊料將濕潤並黏著到金屬化表面並停留在期望的位置上。
然而,本發明不希望使用嵌入式網孔支撐結構,因為使用網孔會導致焊點的機械性能會低於基於引線的焊點。首先,網孔結構並不允許焊點周圍在金屬氧化物交互作用的期間形成的氣體以及回流期間形成之流量自由移動。透過使用本發明的引線,在回流期間形成的氣體可以在一方向上逸出焊點,從而降低接頭的孔隙。
在本發明中,矩形焊點的例子中,引線係平行於較短尺寸的方向,為氣體創造一條較短的逸散路徑。這很重要,因為如果在焊料凝固期間存在氣體,將導致焊點中的孔隙、危及接頭的機械完整性、降低有效的熱導率、以及降低焊料附著的強度。用於晶片附著的焊點,高孔隙將造成在剪切測試中降低了所需的剪切力來將晶粒從焊料分開。如果孔隙位於晶粒熱點之下,可能會因為該熱點而導致晶粒過早失效,這就是為什麼許多工業規範對於焊接孔隙(voiding)載明了總孔隙限制以及單個最大孔隙的限制的原因。
本發明的引線可以平行使用,且平行引線可以緊密包裝在一起。與美國專利公告第8,034,662號中的網孔或柱體相比,這導致較高百分比的高導熱性材質被嵌入焊料系統中。
最後,如上所述,已經發現用於導熱性增強元件的材料選擇是關鍵的。相對地,美國專利公告第8,034,662號未對網孔金屬材料的類型作出區別,亦未列舉合適的示例性材料,包含鎳、金、鉑、銀、鈀、銅、鋁以及它們的組合等。
第2圖根據本發明的一個態樣,繪示一焊劑預製品的光學影像。此外第3圖繪示了第2圖的預製品的X射線影像,其顯示嵌入的引線。第4圖係根據本發明繪示一預製品的光學影像,其顯示嵌入的引線。
在本文中所描述的高熱導性焊料可以任何可實施的方式來製造並應用到基板上。例如,可以藉由捲繞或鑄造將引線結合到焊料合金中。其他的方法對於本領域技術人員也是已知並且可以應用於本發明。
為了確保良好的加工性,引線可以藉由電鍍、濺射或其他已知技術來預敷焊料合金,該焊料合金優選地與基礎焊料合金相同,以確保不存在任何相容性問題。
引線的直徑可以在約5微米至約200微米之間變化,更優選地,在約25微米至約150微米之間,甚至更優選地在約50微米至約125微米之間。所得到的焊點與許多一般電子應用的厚度大致相同。
焊點可以透過將焊膏和/或焊劑預製品施加到基板來形成,在回流過程中,焊料融化並在基板和元件之間形成接頭,第5A圖和第5B圖繪示了使用本發明的焊料而被附著到基板上的矽晶片的SEM影像。
本文描述的焊料可用於所有已知的組裝工藝,包含但不限於回流和真空烘箱。
現在將對於以下列非限制性的示例來討論本發明。 範例1
這個例子說明了嵌入銅線的焊劑預製品與僅含焊料的焊劑預製品的熱導率變化的計算結果。在這個例子中,尺寸為1000×1000×200μm的焊劑預製品中嵌入了三根直徑為微米(µm)的銅線。
系統體積:1000 µm x 1000 µm x 200 µm = 200 x 106
µm3
銅體積:3 x Πr2
h = 3 x Π(50µm)2
x 1000 µm = 23.5 x 106
µm3
焊料體積:(200 – 23.5) x 106
µm3
銅的熱導率(CuTC
):400 W/m-K
焊料的熱導率(SolderTC
):50 W/m-K
Cu體積/總體積x CuTC
+焊料體積/總體積x SolderTC
=總(本體)熱導率= 91 W/m-K 範例2
範例2展示了典型高熔點焊料的熱導率增強,像是具有包含有銀線的導熱性增強元件的SnAg3.5焊料。表2說明了藉由將5根銀線添加到焊料中,系統的最終的熱導率增加到88.1W / m-K,其超過了銦的值。此外該系統的熔點為221°C,其能支撐175°C的最大晶粒操作溫度。相對地,銦合金只能支持大約110°C的晶粒操作溫度。
用鍍錫銅線代替銀線會導致整體熱導率的值些微變小,但相較於沒有熱增強(thermal enhancement)的SnAg3.5焊料合金仍然呈現了較高的熱導率。 表2 SnAg3.5合金以及銀線的熱導率增強
因此可以看出,在焊料合金的材料中使用的導熱性增強元件增強了系統的熱導率,並且實現了最佳的熱傳遞和可靠性。
最後應該知道的是,以下的申請專利範圍涵蓋了本發明於本文所描述的所有通用和具體特徵,以及本發明範圍的所有陳述,其作為語言的問題可能落在兩者之間。
101‧‧‧焊料
102‧‧‧導熱性增強元件
103‧‧‧包層芯層
為了更全面瞭解本發明,將結合附圖作為參考以進行以下描述,其中:
第1圖係繪示了焊料的示意圖,如本文所述具有增強的導熱性。根據本發明的一個實施例的焊料視圖,其中銅線嵌入焊料合金內,及根據本發明的一個實施例的焊料視圖,其中銅線嵌入焊料合金內並且還包含包層芯層。
第2圖根據本發明的一個態樣,繪示了一焊劑預製品的光學影像。
第3圖繪示了第2圖的預製品的X射線影像,其顯示了嵌入的引線。
第4圖根據本發明繪示了預製品的光學影像,其顯示了嵌入的引線。
第5A圖以及第5B圖繪示了使用本發明的焊料而附著於基板的矽晶粒的SEM影像。
Claims (18)
- 一種焊料,其包含: 一焊料合金;以及 一導熱性改良元件, 其中該焊料具有介於約75 W/m-K至約150 W/m-K之間的本體熱導率。
- 如申請專利範圍第1項所述之焊料,其中該焊料合金具有介於約20 W/m-K及約70 W/m-K之間的熱導率。
- 如申請專利範圍第2項所述之焊料,其中該焊料合金具有介於約25 W/m-K及約60 W/m-K之間的熱導率。
- 如申請專利範圍第1項所述之焊料,其中該焊料合金選自由高鉛合金、SnAg合金、SnAgCu合金、銦、銦合金、SnPb合金以及前述中一個或多個的組合所組成的群組。
- 如申請專利範圍第1項所述之焊料,其中該導熱性改良元件是引線的形式。
- 如申請專利範圍第5項所述之焊料,其中該導熱性改良元件選自由銀、銅鍍錫、鋁鍍鎳再鍍錫、鈀及鉑所組成的群組。
- 如申請專利範圍第5項所述之焊料,其中該導熱性改良元件不是裸銅、裸鋁或金。
- 如申請專利範圍第5項所述之焊料,其中該導熱性改良元件具有至少100W / m-K的熱導率。
- 如申請專利範圍第8項所述之焊料,其中該導熱性改良元件具有至少200W / m-K的熱導率。
- 如申請專利範圍第9項所述之焊料,其中該導熱性改良元件具有至少300W / m-K的熱導率。
- 如申請專利範圍第1項所述之焊料,其中該焊料具有介於約80 W/m-K及約110 W/m-K之間的本體熱導率。
- 如申請專利範圍第1項所述之焊料,其中該焊料是一焊劑預製品的形式。
- 如申請專利範圍第1項所述之焊料,其中無鉛的該焊料包含介於約30 wt.%至約95 wt.%的該焊料合金及介於約70 wt.%至約5 wt.%的該導熱性改良元件。
- 如申請專利範圍第5項所述之焊料,其中該引線包含複數個引線,該複數個引線係平行且緊密堆疊在一起。
- 一種焊點,其包含申請專利範圍第1項所述之焊料。
- 一種焊點,其包含申請專利範圍第5項所述之焊料。
- 如申請專利範圍第16項所述之焊點,其中該焊點是長方形且該引線平行於該長方形的一較短尺寸方向,其中該引線為氣體逸散提供一較短路徑。
- 一種製造介在一基板及一元件之間的一焊點,該方法包含以下步驟: 將如申請專利範圍第1項所述之焊料施加到一基板上; 設置一元件在該焊料上;以及 回流該焊料以在該基板及該元件之間形成該焊點。
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Also Published As
Publication number | Publication date |
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US11842974B2 (en) | 2023-12-12 |
US20200203304A1 (en) | 2020-06-25 |
JP7084419B2 (ja) | 2022-06-14 |
EP3621767B1 (en) | 2022-03-16 |
CN110621438A (zh) | 2019-12-27 |
WO2018209237A1 (en) | 2018-11-15 |
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