CN110520929A - 内存刷新技术及计算机系统 - Google Patents

内存刷新技术及计算机系统 Download PDF

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CN110520929A
CN110520929A CN201780089583.1A CN201780089583A CN110520929A CN 110520929 A CN110520929 A CN 110520929A CN 201780089583 A CN201780089583 A CN 201780089583A CN 110520929 A CN110520929 A CN 110520929A
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rank
memory
refresh
memory access
threshold
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CN110520929B (zh
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胡杏
梁传增
肖世海
王侃文
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Huawei Technologies Co Ltd
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40603—Arbitration, priority and concurrent access to memory cells for read/write or refresh operations
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40618—Refresh operations over multiple banks or interleaving
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14—Handling requests for interconnection or transfer
    • G06F13/16—Handling requests for interconnection or transfer for access to memory bus
    • G06F13/1605—Handling requests for interconnection or transfer for access to memory bus based on arbitration
    • G06F13/161—Handling requests for interconnection or transfer for access to memory bus based on arbitration with latency improvement
    • G06F13/1636—Handling requests for interconnection or transfer for access to memory bus based on arbitration with latency improvement using refresh
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14—Handling requests for interconnection or transfer
    • G06F13/16—Handling requests for interconnection or transfer for access to memory bus
    • G06F13/1605—Handling requests for interconnection or transfer for access to memory bus based on arbitration
    • G06F13/1642—Handling requests for interconnection or transfer for access to memory bus based on arbitration with request queuing
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14—Handling requests for interconnection or transfer
    • G06F13/16—Handling requests for interconnection or transfer for access to memory bus
    • G06F13/1668—Details of memory controller
    • G06F13/1673—Details of memory controller using buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40611—External triggering or timing of internal or partially internal refresh operations, e.g. auto-refresh or CAS-before-RAS triggered refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/406—Refreshing of dynamic cells
    • G11C2211/4061—Calibration or ate or cycle tuning

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Dram (AREA)
  • Memory System (AREA)

Abstract

一种内存刷新技术及计算机系统，所述内存刷新技术应用于包括内存控制器(106)以及动态随机存取存储器DRAM的计算机系统中。根据所述内存刷新技术，所述内存控制器(106)接收访存请求。当在第一时间段内接收的访存请求的目标rank的数量小于设置的第一阈值，并且，所述访存请求中读请求的比例或写请求的比例大于设置的第二阈值时，所述内存控制器(106)按照T/N的时间间隔对所述多个rank中的第一rank进行刷新。其中，所述T用于指示标准的平均刷新时间间隔，N为大于1的整数。该内存刷新技术能够提高计算机系统在内存刷新过程中的性能。

Description

PCT国内申请，说明书已公开。

Claims (28)

  1. PCT国内申请，权利要求书已公开。
CN201780089583.1A 2017-04-14 2017-04-14 内存刷新方法、装置及计算机系统 Active CN110520929B (zh)

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CN112466361A (zh) * 2020-11-25 2021-03-09 海光信息技术股份有限公司 一种dimm的数据初始化方法、装置、系统及设备
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CN112466361A (zh) * 2020-11-25 2021-03-09 海光信息技术股份有限公司 一种dimm的数据初始化方法、装置、系统及设备
CN112466361B (zh) * 2020-11-25 2023-11-21 海光信息技术股份有限公司 一种dimm的数据初始化方法、装置、系统及设备
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JP6780897B2 (ja) 2020-11-04
US20200066331A1 (en) 2020-02-27
WO2018188083A1 (zh) 2018-10-18
CN110520929B (zh) 2022-07-22
JP2020516988A (ja) 2020-06-11
SG11201908904TA (en) 2019-10-30
US20210335417A1 (en) 2021-10-28
EP3605541A1 (en) 2020-02-05
EP3605541A4 (en) 2020-04-01
US11074958B2 (en) 2021-07-27
US11705180B2 (en) 2023-07-18

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