CN110546707A - 内存刷新技术及计算机系统 - Google Patents

内存刷新技术及计算机系统 Download PDF

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CN110546707A
CN110546707A CN201780089579.5A CN201780089579A CN110546707A CN 110546707 A CN110546707 A CN 110546707A CN 201780089579 A CN201780089579 A CN 201780089579A CN 110546707 A CN110546707 A CN 110546707A
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rank
refresh
memory
threshold
memory controller
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CN201780089579.5A
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CN110546707B (zh
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胡杏
梁传增
肖世海
王侃文
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14—Handling requests for interconnection or transfer
    • G06F13/16—Handling requests for interconnection or transfer for access to memory bus
    • G06F13/1605—Handling requests for interconnection or transfer for access to memory bus based on arbitration
    • G06F13/161—Handling requests for interconnection or transfer for access to memory bus based on arbitration with latency improvement
    • G06F13/1636—Handling requests for interconnection or transfer for access to memory bus based on arbitration with latency improvement using refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40611—External triggering or timing of internal or partially internal refresh operations, e.g. auto-refresh or CAS-before-RAS triggered refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40618—Refresh operations over multiple banks or interleaving
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/061—Improving I/O performance
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0655—Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
    • G06F3/0659—Command handling arrangements, e.g. command buffers, queues, command scheduling
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Human Computer Interaction (AREA)
  • Dram (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System (AREA)

Abstract

一种内存刷新技术及计算机系统，所述内存刷新技术应用于包括内存控制器以及动态随机存取存储器DRAM的计算机系统中，根据所述内存刷新技术，所述内存控制器接收访存请求，当接收的访存请求中访问所述DRAM中的第一rank的访存请求的数量大于0且小于第二阈值时，所述内存控制器对所述第一rank进行刷新。该方法使得即使第一rank无法处于空闲状态，也能够及时得到刷新。从而降低了因为延迟刷新而产生的被动刷新次数的增加对计算机系统性能的影响，提高内存刷新的灵活性，减少了刷新开销。

Description

PCT国内申请，说明书已公开。

Claims (28)

  1. PCT国内申请，权利要求书已公开。
CN201780089579.5A 2017-04-14 2017-04-14 内存刷新技术及计算机系统 Active CN110546707B (zh)

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PCT/CN2017/080640 WO2018188085A1 (zh) 2017-04-14 2017-04-14 内存刷新技术及计算机系统

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CN110546707A true CN110546707A (zh) 2019-12-06
CN110546707B CN110546707B (zh) 2021-10-19

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US (1) US20200066330A1 (zh)
EP (1) EP3605542B1 (zh)
JP (1) JP7043515B2 (zh)
KR (1) KR102258360B1 (zh)
CN (1) CN110546707B (zh)
AU (1) AU2017409368B2 (zh)
BR (1) BR112019021554B1 (zh)
CA (1) CA3058778C (zh)
SG (1) SG11201908892TA (zh)
WO (1) WO2018188085A1 (zh)

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CN113741820A (zh) * 2021-09-18 2021-12-03 青岛海信传媒网络技术有限公司 一种数据从内存刷新到eMMC存储器的方法及显示设备
CN115148248A (zh) * 2022-09-06 2022-10-04 北京奎芯集成电路设计有限公司 基于深度学习的dram刷新方法和装置

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KR20220031793A (ko) 2020-09-03 2022-03-14 삼성전자주식회사 메모리 장치, 그것을 포함하는 메모리 시스템, 그것을 제어하는 제어기 및 그것의 동작 방법
US11798604B2 (en) * 2021-09-01 2023-10-24 Dell Products L.P. Memory architecture having ranks with variable data widths
US20230236653A1 (en) * 2022-01-26 2023-07-27 Samsung Electronics Co.,Ltd. Power reduction for systems having multiple ranks of memory
US20230359373A1 (en) * 2022-05-03 2023-11-09 Qualcomm Incorporated Selective refresh for memory devices

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CN113741820B (zh) * 2021-09-18 2023-10-03 青岛海信传媒网络技术有限公司 一种数据从内存刷新到eMMC存储器的方法及显示设备
CN115148248A (zh) * 2022-09-06 2022-10-04 北京奎芯集成电路设计有限公司 基于深度学习的dram刷新方法和装置

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CA3058778A1 (en) 2018-10-18
BR112019021554A2 (pt) 2020-05-12
EP3605542B1 (en) 2021-07-21
JP2020517024A (ja) 2020-06-11
KR102258360B1 (ko) 2021-05-31
EP3605542A1 (en) 2020-02-05
BR112019021554B1 (pt) 2024-02-27
KR20190126888A (ko) 2019-11-12
AU2017409368B2 (en) 2022-07-07
US20200066330A1 (en) 2020-02-27
CA3058778C (en) 2023-02-21
SG11201908892TA (en) 2019-11-28
WO2018188085A1 (zh) 2018-10-18
EP3605542A4 (en) 2020-05-20
AU2017409368A1 (en) 2019-10-24
CN110546707B (zh) 2021-10-19
JP7043515B2 (ja) 2022-03-29

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