SG11201908892TA - Memory refresh technology and computer system - Google Patents

Memory refresh technology and computer system

Info

Publication number
SG11201908892TA
SG11201908892TA SG11201908892TA SG11201908892TA SG 11201908892T A SG11201908892T A SG 11201908892TA SG 11201908892T A SG11201908892T A SG 11201908892TA SG 11201908892T A SG11201908892T A SG 11201908892TA
Authority
SG
Singapore
Prior art keywords
memory
computer system
refresh
rank
memory refresh
Prior art date
Application number
Inventor
Xing Hu
Chuanzeng Liang
Shihai Xiao
Kanwen Wang
Original Assignee
Huawei Tech Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huawei Tech Co Ltd filed Critical Huawei Tech Co Ltd
Publication of SG11201908892TA publication Critical patent/SG11201908892TA/en

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14—Handling requests for interconnection or transfer
    • G06F13/16—Handling requests for interconnection or transfer for access to memory bus
    • G06F13/1605—Handling requests for interconnection or transfer for access to memory bus based on arbitration
    • G06F13/161—Handling requests for interconnection or transfer for access to memory bus based on arbitration with latency improvement
    • G06F13/1636—Handling requests for interconnection or transfer for access to memory bus based on arbitration with latency improvement using refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40611—External triggering or timing of internal or partially internal refresh operations, e.g. auto-refresh or CAS-before-RAS triggered refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40618—Refresh operations over multiple banks or interleaving
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/061—Improving I/O performance
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0655—Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
    • G06F3/0659—Command handling arrangements, e.g. command buffers, queues, command scheduling
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Abstract

MEMORY REFRESH TECHNOLOGY AND COMPUTER SYSTEM This application provides a memory refresh technology and a computer system. The memory refresh technology is applied to a computer system including a memory controller and a dynamic random access memory DRAM. According to the memory refresh technology, 5 the memory controller receives access requests. When a quantity of access requests for accessing a first rank in the DRAM that are in the received access requests is greater than 0 and less than a second threshold, the memory controller refreshes the first rank. According to the memory refresh technology provided in this application, the first rank can be refreshed in time even if the first rank cannot be in an idle state. Therefore, impact caused on computer 10 system performance by an increase in passive refreshes caused by refresh postponements is mitigated, memory refresh flexibility is improved, and refresh overheads are reduced. Figure 3 15
SG11201908892T 2017-04-14 2017-04-14 Memory refresh technology and computer system SG11201908892TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2017/080640 WO2018188085A1 (en) 2017-04-14 2017-04-14 Memory refreshing technique and computer system

Publications (1)

Publication Number Publication Date
SG11201908892TA true SG11201908892TA (en) 2019-11-28

Family

ID=63792104

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201908892T SG11201908892TA (en) 2017-04-14 2017-04-14 Memory refresh technology and computer system

Country Status (10)

Country Link
US (1) US20200066330A1 (en)
EP (1) EP3605542B1 (en)
JP (1) JP7043515B2 (en)
KR (1) KR102258360B1 (en)
CN (1) CN110546707B (en)
AU (1) AU2017409368B2 (en)
BR (1) BR112019021554B1 (en)
CA (1) CA3058778C (en)
SG (1) SG11201908892TA (en)
WO (1) WO2018188085A1 (en)

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US11798604B2 (en) * 2021-09-01 2023-10-24 Dell Products L.P. Memory architecture having ranks with variable data widths
CN113741820B (en) * 2021-09-18 2023-10-03 青岛海信传媒网络技术有限公司 Method for refreshing data from memory to eMMC memory and display device
US20230236653A1 (en) * 2022-01-26 2023-07-27 Samsung Electronics Co.,Ltd. Power reduction for systems having multiple ranks of memory
US20230359373A1 (en) * 2022-05-03 2023-11-09 Qualcomm Incorporated Selective refresh for memory devices
CN115148248B (en) * 2022-09-06 2022-11-08 北京奎芯集成电路设计有限公司 Deep learning-based DRAM (dynamic random Access memory) refreshing method and device

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Also Published As

Publication number Publication date
US20200066330A1 (en) 2020-02-27
CA3058778C (en) 2023-02-21
CN110546707A (en) 2019-12-06
EP3605542B1 (en) 2021-07-21
JP2020517024A (en) 2020-06-11
WO2018188085A1 (en) 2018-10-18
AU2017409368B2 (en) 2022-07-07
BR112019021554A2 (en) 2020-05-12
EP3605542A4 (en) 2020-05-20
CA3058778A1 (en) 2018-10-18
CN110546707B (en) 2021-10-19
KR102258360B1 (en) 2021-05-31
EP3605542A1 (en) 2020-02-05
BR112019021554B1 (en) 2024-02-27
JP7043515B2 (en) 2022-03-29
AU2017409368A1 (en) 2019-10-24
KR20190126888A (en) 2019-11-12

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