CN110459259A - Store test method, system and the storage medium of equipment write error error correcting capability - Google Patents
Store test method, system and the storage medium of equipment write error error correcting capability Download PDFInfo
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- CN110459259A CN110459259A CN201910701427.7A CN201910701427A CN110459259A CN 110459259 A CN110459259 A CN 110459259A CN 201910701427 A CN201910701427 A CN 201910701427A CN 110459259 A CN110459259 A CN 110459259A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/14—Implementation of control logic, e.g. test mode decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C2029/4402—Internal storage of test result, quality data, chip identification, repair information
Abstract
The present invention provides test method, system and the storage mediums of storage equipment write error error correcting capability, and wherein test method includes: the flash block selected blank or be wiped free of data, and data are written in the data page for the flash block selected;It reads the data on all data pages of the flash block of write-in data and saves in the buffer, then wipe the data in the flash block;Write operation again is carried out to the data page for the data block being wiped free of;It tests to the data page for the data block for being again written data, it compares to obtain the first comparing result according to the population size of the population size of the data bit to report an error and the data bit of write-in data, and the address of address data block corresponding with the write-in data bit of data, the address of data page of the address of the data block to report an error, data page compare to obtain the second comparing result, above-mentioned first and second comparing result is the test result of the write error error correcting capability of the storage equipment.
Description
Technical field
The present invention relates to the error correcting capability measuring technologies in storage system, and in particular to a kind of storage equipment write error error correction
The test method of ability.
Background technique
Flash chip is a kind of storage medium for reaching storage electronic information using flash memory technology, is quickly deposited since it has
Data such as do not disappear at the features after entering and powering off, and have the advantages such as small volume, memory capacity be big, more and more to store
Equipment selects to use flash chip as storage medium.However, physical characteristic of the flash chip due to itself, the number write into
According to the overturning mistake that a certain amount of data bit can occur when reading out, reduced so as to cause the accuracy of storing data.
The generation of such issues that in order to be reduced or avoided, it is just necessary on the storage device controller using flash chip as storage medium
In addition redundant correcting and error handler guarantee the correctness of storing data.
In the storage equipment using flash memory technology, the write operation of flash memory must be in space state in target area
Do not have to carry out under conditions of data, if target area has been written into data, could be written after just must first wiping, therefore wipes
Operation is the basic operation of flash memory.It is unit erasing that wherein flash chip, which is by block, is unit write-read by page, includes in a block
Multiple pages, and each block must be wiped first before writing.In order to guarantee the correctness of data, flash controller is being written
Redundant correcting code data can be generated according to data when data and redundant correcting code data are written in Hash memory pages together, In
In Hash memory pages read data when, redundant correcting code data can read in together in flash controller and carry out redundancy check with
And error correction will trigger error handler if the digit of mistake has been more than the threshold value of error correction algorithm to do subsequent processing, it is no
Correct data will then be returned to caller.
The error processing capacity of flash memory becomes the reliability for evaluating the entirely storage equipment based on flash chip gradually at present
One of important indicator.However the method that write error error correcting capability in storage equipment is tested and evaluated in the prior art has
It is to be modified.
Summary of the invention
The present invention is to solve above-mentioned more appropriate method not yet and come to write error error correcting capability in storage equipment
The problem of being tested and being evaluated and carry out, and it is an object of the present invention to provide it is a kind of store equipment write error error correcting capability test side
Method, system and storage medium.
Present invention is generally directed to this problem, propose a kind of to be artificially inserted into some flash memories predefined during research and development
Write error, come the ability for examining storage equipment itself to handle mistake, to improve the final reliability of product.
The present invention provides a kind of test methods for storing equipment write error error correcting capability characterized by comprising
S0, it selects blank or is wiped free of the flash block of data, and number is written in the data page in the flash block selected
According to;
The data on all data pages in the flash block of data and preservation are written in the buffer in S1, reading, then wipe
Data in the flash block;
S2, write operation again is carried out to the data page for the flash block for being wiped free of data;
S3, it tests to the data page for the data block for being again written data, the quantity according to the data bit to report an error is big
The small population size with the data bit that data are written in the step S0 compares, and obtains the first comparing result, and will be described
The test result of the write error error correcting capability of the storage equipment is written in first comparing result.
A kind of test method storing equipment write error error correcting capability provided by the invention, also has the feature that,
After the step S2, further includes:
Address according to the address of the data block to report an error, data page is corresponding with the data bit of data is written in the step S0
The address of data block, the address of data page compare, obtain the second comparing result, and second comparing result is written
The test result of the write error error correcting capability of the storage equipment.
A kind of test method storing equipment write error error correcting capability provided by the invention, wherein first comparing result
For accurate judgement, the data that are written are with the presence or absence of write error in storage chip to be detected or storage equipment, and described second
Comparing result is used to determine that the address of the data page of institute's error correction is the data page of preset write error, to avoid encountering non-
Expected mistake.
The present invention provides a kind of test methods for storing equipment write error error correcting capability, wherein selecting in the step S0
Blank or be wiped free of data flash block be it is random, can be multiple and selected data blocks and set in storage
Address in standby storage chip is continuous interval or continuous and interval and deposits.
The present invention provides a kind of test methods for storing equipment write error error correcting capability, wherein in the flash block selected
Data page can be multiple, and wherein data page is the smallest write-in unit.
The present invention provides a kind of test methods for storing equipment write error error correcting capability, wherein in the flash block selected
The data of write-in are random.
The present invention provides a kind of test methods for storing equipment write error error correcting capability, wherein in the write step again
Carry out write operation data block be it is random, when valid data page write in said write step when making wrong data page, due to
Flash memory wipe after can only write primary characteristic, flash chip will report write error, and store equipment will triggering following mistake at
Manage program.
The present invention provides a kind of test methods for storing equipment write error error correcting capability, wherein in the flash block selected
The quantity of the data bit of write-in can determine according to the threshold value of the error correction algorithm of storage equipment, wherein write-in is greater than storage equipment
The test result in step S3 is denoted as the first testing result by the data of error correction threshold value;Alternatively, write-in is equal to storage equipment
Error correction threshold value data, the test result in step S3 is denoted as the second testing result;It is set alternatively, write-in is less than storage
The test result in step S3 is denoted as third testing result by the data of standby error correction threshold value.
The present invention also provides a kind of test macros for storing equipment write error error correcting capability characterized by comprising
Writing module is used to select a blank on storage chip to be detected or storage equipment or has been wiped free of number
According to flash block, and data are written on the data page in the flash block selected;
Erasing module is read, is used to read all data pages in the flash block that data are written in the write module
Data and save in the buffer, then wipe the data in the flash block;
Writing module again is used to carry out write operation to the data block data page being wiped free of in erasing module that reads;
Inspection module is read, is used to be read out the data page for the data block for being again written data inspection, according to
The population size that the data bit of data is written in the population size and the write module of the data bit to report an error compares, and obtains
First comparing result, and by first comparing result be written it is described storage equipment write error error correcting capability test result.
A kind of test macro storing equipment write error error correcting capability provided by the invention, also has a feature in that
The inspection module that reads is also according in the address of the data block to report an error, the address of data page and write-in data step
The address of the corresponding data block of data bit, the address of data page of write-in data compare, and obtain the second comparing result, and will
The test result of the write error error correcting capability of the storage equipment is written in second comparing result.
A kind of test macro storing equipment write error error correcting capability provided by the invention, the sky selected in the test macro
Flash block that is white or being wiped free of data be it is random, can be multiple, selected data blocks storage equipment in ground
Location is continuous interval or continuous and interval and deposits.
A kind of test macro storing equipment write error error correcting capability provided by the invention, wherein according to preset storage ground
Random data is written in storage equipment to be detected by location, wherein the storage address be dispersed throughout it is described select blank or by
Each of the flash block of data data block is wiped, but the address of the data page in each data block is random distribution.
The present invention also provides a kind of storage mediums, are stored with computer program, which is characterized in that the computer journey
The step in the test method of above-mentioned storage equipment write error error correcting capability is realized when sequence is executed by processor.
The present invention also provides a kind of storage mediums, wherein the storage medium is flash chip.
The effect and effect of invention
Test method, system and the storage medium of storage equipment write error error correcting capability involved according to the present invention, because
There is write step for wherein test method, blank can be selected or be wiped free of the flash block of data, and in the flash memory selected
Data are written in data page in block;Step is wiped with reading, all data in the flash block of write-in data can be read
Then data and preservation on page wipe the data in the flash block in the buffer;With write step again, can wipe reading
Except the data page for the data block being wiped free of in step carries out write operation;Also have and reads checking procedure, it can be to being again written
The data page of the data block of data is tested, and is written according in the population size of the data bit to report an error and write-in data step
The population size of the data bit of data compares to obtain the first comparing result, and the address according to the data block to report an error, number
It is carried out according to the address of the address of the address of page data block corresponding with the write-in data bit of data in write-in data step, data page
The second comparing result is compared and obtains, above-mentioned first and second comparing result is written into the write error error correction energy of the storage equipment
The test result of power, so being set by being previously inserted write error data on scheduled position storage chip or storage is written
It in standby upper data page, then carries out write operation and reads to examine, the data finally read are exactly that have passed through entangling for storage chip
Wrong circuit and algorithm, program treated data, compare the data and are compared with the write error data being previously inserted, comparison
As a result the write error error correcting capability of the storage equipment with storage chip is just represented.
Detailed description of the invention
Fig. 1 is the structural framing schematic diagram that equipment is stored described in the embodiment of the present invention;
Fig. 2 is shown the step of storing the test method of equipment write error error correcting capability described in the above embodiment of the present invention
It is intended to;
Fig. 3 is the structural framing schematic diagram of data block in flash chip in the above embodiment of the present invention, data page;And
Fig. 4 is the module frame chart that the test macro of equipment write error error correcting capability is stored in the above embodiment of the present invention.
Specific embodiment
It is real below in order to be easy to understand the technical means, the creative features, the aims and the efficiencies achieved by the present invention
Example combination attached drawing is applied to have the test method, system and storage medium work of the write error error correcting capability of storage equipment of the present invention
Body illustrates.
As shown in Fig. 1 in attached drawing, storage equipment of the present invention has storage chip 10, control chip 20 and is used for
The storage equipment mutually plugs the interface 30 and pcb board 40 of connection with external data source, wherein the storage chip 10 can
To store the data being written into, wherein control program is stored in the control chip 20, to ensure the storage equipment to mistake
Timely processing accidentally, to improve the reliability of storage, and the control chip 20 and the interface 30 can be deposited around described
Store up equipment error correction circuit and directly with it is described storage equipment on flash block connection communication and be written and read.
As shown in Fig. 2 in attached drawing, it is shown that the test method of storage equipment write error error correcting capability of the present invention, packet
Include following steps:
S0, it selects blank or is wiped free of the flash block of data, and number is written in the data page in the flash block selected
According to;
The data on all data pages in the flash block of data and preservation are written in the buffer in S1, reading, then wipe
Data in the flash block;
S2, write operation again is carried out to the data page for the flash block for being wiped free of data;
S3, it tests to the data page for the data block for being again written data, the quantity according to the data bit to report an error is big
The small population size with the data bit that data are written in the step S0 compares, and obtains the first comparing result, and will be described
The test result of the write error error correcting capability of the storage equipment is written in first comparing result.
Wherein, in the step S3, first comparing result be used to accurate judgement in storage chip to be detected or
It is to store the data being written in equipment with the presence or absence of write error.
In addition, after the step S2 of the test method further include: according to the address of the data block to report an error, data page
The address of address data block corresponding with the data bit of data is written in the step S0, the address of data page compare, and obtain
To the second comparing result, and by second comparing result be written it is described storage equipment write error error correcting capability test knot
Fruit.
Wherein second comparing result is used to determine that the address of the data page of institute's error correction is preset write error
Data page, to avoid encountering unexpected mistake.
In the step S0, the data page in flash block selected can be multiple, and wherein data page is the smallest writes
Enter unit, and in the step S0, according to preset storage address by random data be written to storage chip to be detected or
It is in storage equipment, wherein the storage address is dispersed throughout and described select blank or be wiped free of each in the flash block of data
A data block, but the address of the data page in each data block is random distribution.
In this way this data block for being written into data normally selected below using when, in the step S2
Middle progress again write operation when, valid data page is written to when made on wrong page in the step S0, after being wiped due to flash memory
Primary characteristic can only be write, flash chip will report write error, and store equipment will triggering following error handler.
For example, 8 data pages in data block are selected in the step S0, be respectively written into 15,15,30,30,
45,45,60,60 total 300bit, it is then erased and after being written again by the step S2, as a result by error correction circuit and
Algorithm, program are fed back to obtain 289bit mistake and obtain error correction, then find by comparing preset write error 300bit and error correction
Wrong 289bit the write error error correcting capability of the tested storage chip can be quantitatively evaluated.Further, knowing
Under conditions of the address of specific data block and data page, check problem, the algorithm of error correction circuit can be fed back according to above-mentioned
To the result of 289bit of error correction do accurate judgement: the address of the data page of institute's error correction is the number of preset write error
According to page, to avoid encountering unexpected mistake.
For realization, above-mentioned test method stores equipment write error error correcting capability to test through the invention, the present invention also provides
A kind of test macro storing equipment write error error correcting capability comprising writing module 100 reads erasing module 200, is written again
Module 300 and reading inspection module 400, wherein the write module 100 is used in storage chip 10 to be detected or storage
A blank is selected in equipment or has been wiped free of the flash block of data, and data are written on the data page in the flash block selected,
It is wherein described to read on all data pages that erasing module 200 is read in the flash block that data are written in the write module 100
Data and save in the buffer, the data in the flash block are then wiped, wherein described 300 pairs of reading of writing module again are wiped
The data block data page being wiped free of in step carries out write operation again, wherein the reading inspection module 400 is used for by again
The data page that the data block of data is written is tested, according to the population size of the data bit to report an error and the write module 100
The population size that the data bit of data is written compares to obtain the first comparing result, and the ground according to the data block to report an error
Location, the address of address data block corresponding with the write-in data bit of data of data page, the address of data page compare and obtain
To the second comparing result, above-mentioned first and second comparing result is written into the survey of the error correcting capability of the write error of the storage equipment
Test result.
The present embodiment further provides for a kind of storage medium, is stored with computer program, and the computer program is located
Reason device realizes the test method of the storage equipment write error error correcting capability when executing, wherein the storage medium is preferably flash memory
Chip.
As shown in Fig. 3 in attached drawing, flash chip (Flash Memory Chip) includes multiple data blocks, each data
Block has multiple data pages again, and it is unit erasing that work, which is by data block, is unit write-read by data page, includes in a block
Multiple pages, each block must be wiped first before writing.
It is worth noting that, select and read write-in valid data data block be that random, selected data block exists
Address in flash chip is continuous interval or continuous and interval and deposits.Data block can be multiple, ground
Location can be continuously, is also possible to interval and chooses.Interval has no effect on continuous two schemes as a result, effect is not substantive
Property difference, in order to improve the representativeness of detection method, inventor suggest using continuously with the data block address that is spaced and deposits into
The selection of row data block.In addition, data page can select it is multiple.In general protection list of the described control chip 20 for data
Position is both less than equal to a data page, so being all usually to do independent protective to each data page.
In order to feel out error correction practical manifestation of the storage chip under various error capacities comprehensively, in the flash block selected
The size that the data bit of data is written in data page is determined according to the threshold value of the error correction algorithm of storage equipment, is respectively set to big
In the error correction threshold value, the error correction threshold value less than storage equipment and the error correction threshold value equal to storage equipment of storage equipment, to deserved
To three kinds of test results.Obviously, error correction threshold value herein is the error correction threshold value of chip maker's mark.
Specifically, write-in is greater than the data for storing the error correction threshold value of equipment in the data page of the flash block selected, will
The test result in step S3 is denoted as the first testing result;Alternatively, write-in etc. in the data page of the flash block selected
In the data of the error correction threshold value of storage equipment, the test result in step S3 is denoted as the second testing result;Alternatively, described
Write-in is less than the data of the error correction threshold value of storage equipment in the data page for the flash block selected, by the test knot in step S3
Fruit is denoted as third testing result.
The obvious storage medium can be CD, flash disk or disk, floppy disk, CD, DVD, hard disk, flash memory, CF card, SD
Card, mmc card, SM card, memory stick (Memory Stick), xD card, tape, magneto-optic disk etc., by the computer of the corresponding above method
On the storage medium, user installs or runs after obtaining the storage medium can be in correspondence for program storage or imprinting
Storage device on execute the test method of above-mentioned write error error correcting capability of the invention.
The action and effect of embodiment
Test method, system and the storage medium of storage equipment write error error correcting capability according to the present invention, because its
Middle test method has write step, can select blank or be wiped free of the flash block of data, and in the flash block selected
Data page in data are written;Step is wiped with reading, can be read on all data pages in the flash block of write-in data
Data and save in the buffer, then wipe the data in the flash block;With write step again, can be walked to erasing is read
The data page for the data block being wiped free of in rapid carries out write operation;Also have and reads checking procedure, it can be to being again written data
The data page of data block test, and data are written according in the population size of the data bit to report an error and write-in data step
The population size of data bit compare to obtain the first comparing result, and the address according to the data block to report an error, data page
Address and write-in data step in the address of the corresponding data block of the write-in data bit of data, the address of data page compare
And the second comparing result is obtained, above-mentioned first and second comparing result can be written into the error correction energy of the write error of the storage equipment
The test result of power, so being set by being previously inserted write error data on scheduled position storage chip or storage is written
It in standby upper data page, then carries out write operation and reads to examine, the data finally read are exactly that have passed through entangling for storage chip
Wrong circuit and algorithm, program treated data, compare the data and are compared with the write error data being previously inserted, comparison
As a result the write error error correcting capability of the storage equipment with storage chip is just represented.
The present invention is not limited to the above-described embodiments, for those skilled in the art, is not departing from
Under the premise of the principle of the invention, several improvements and modifications can also be made, these improvements and modifications are also considered as protection of the invention
Within the scope of.
The content being not described in detail in this specification belongs to the prior art well known to professional and technical personnel in the field.
Claims (10)
1. a kind of test method for storing equipment write error error correcting capability, which comprises the following steps:
S0, it selects blank or is wiped free of the flash block of data, and data are written in the data page in the flash block selected;
The data on all data pages in the flash block of data and preservation are written in the buffer in S1, reading, then wipe the sudden strain of a muscle
Data in counterfoil;
S2, write operation again is carried out to the data page for the flash block for being wiped free of data;
S3, test to the data page for the data block for being again written data, according to the population size of the data bit to report an error with
The population size of data bit that data are written in the step S0 compares, and obtains the first comparing result, and by described first
Test result is written in comparing result.
2. the method according to claim 1, wherein after the step S2, further includes:
According to the address of the address of the data block to report an error, data page number corresponding with the data bit of data is written in the step S0
It is compared according to the address of the address of block, data page, obtains the second comparing result, and second comparing result is written and is tested
As a result.
3. the method according to claim 1, wherein described in the step S0 selects blank or is wiped free of
The flash block of data includes:
Multiple blank are selected in storage chip at random or are wiped free of the flash block of data, and the address of multiple flash blocks
It is continuous, interval or continuous and interval and deposits.
4. according to the method described in claim 3, it is characterized by:
In the step S0, data are written in described select in blank or the flash block for being wiped free of data at random.
5. according to the method described in claim 4, it is characterized by:
In step so), write-in is greater than the data of the error correction threshold value of storage equipment, and the test result in step S3 is denoted as
First testing result;Alternatively,
In step so), write-in is equal to the data of the error correction threshold value of storage equipment, and the test result in step S3 is denoted as
Second testing result;Alternatively,
In step so), write-in is less than the data of the error correction threshold value of storage equipment, and the test result in step S3 is denoted as
Third testing result.
6. according to the method described in claim 1, it is characterized by:
Data are written according to preset storage address in storage equipment to be detected at random, wherein the storage address is dispersed throughout
It is described to select each of blank or the flash block for being wiped free of data data block, but in the data page of each data block
Address is random distribution.
7. a kind of test macro for storing equipment write error error correcting capability characterized by comprising
Writing module is used to select blank on storage chip to be detected or storage equipment or has been wiped free of the sudden strain of a muscle of data
Counterfoil, and data are written on the data page in the flash block selected;
Erasing module is read, is used to read the number on all data pages in the flash block that data are written in the write module
According to and save in the buffer, then wipe the data in the flash block;
Writing module again is used to that behaviour to be written again to the data page of the data block for reading and being wiped free of in erasing module
Make;
Inspection module is read, is used to be read out the data page for the data block for being again written data inspection, according to reporting an error
Data bit population size and the write module in the population sizes of data bit of data be written compare, obtain first
Comparing result, and test result is written into first comparing result.
8. test macro according to claim 7, it is characterised in that:
The reading inspection module in the address of the data block to report an error, the address of data page and the write module also according to being written
The address of the corresponding data block of the data bit of data, the address of data page compare, and obtain the second comparing result, and will be described
Test result is written in second comparing result.
9. test macro according to claim 7, it is characterised in that:
Data are written according to preset storage address in storage equipment to be detected at random, wherein the storage address is dispersed throughout
It is described to select each of blank or the flash block for being wiped free of data data block, but in the data page of each data block
Address is random distribution.
10. a kind of storage medium, is stored with computer program, it is characterised in that:
Realize that storage equipment described in any one of the claims 1 to 6 is write when the computer program is executed by processor
Step in the test method of error correction ability.
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CN111930302A (en) * | 2020-06-30 | 2020-11-13 | 深圳佰维存储科技股份有限公司 | Data reading method and device, computer readable storage medium and electronic equipment |
CN112083891A (en) * | 2020-09-22 | 2020-12-15 | 深圳芯邦科技股份有限公司 | Method for detecting data block in memory and related equipment |
CN112397136A (en) * | 2021-01-21 | 2021-02-23 | 武汉精鸿电子技术有限公司 | Parameter testing method and device for semiconductor memory testing software |
CN113470728A (en) * | 2021-06-29 | 2021-10-01 | 成都佰维存储科技有限公司 | Error correction capability test method and device, readable storage medium and electronic equipment |
CN113778822A (en) * | 2021-08-04 | 2021-12-10 | 成都佰维存储科技有限公司 | Error correction capability test method and device, readable storage medium and electronic equipment |
CN114816833A (en) * | 2022-04-15 | 2022-07-29 | 巨翊科技(上海)有限公司 | Flash data writing method, device and system |
CN116880782A (en) * | 2023-09-08 | 2023-10-13 | 合肥康芯威存储技术有限公司 | Embedded memory and testing method thereof |
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