CN110455419A - Hanging type photodetector and preparation method thereof based on vanadium oxide single-chip - Google Patents
Hanging type photodetector and preparation method thereof based on vanadium oxide single-chip Download PDFInfo
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- CN110455419A CN110455419A CN201910608854.0A CN201910608854A CN110455419A CN 110455419 A CN110455419 A CN 110455419A CN 201910608854 A CN201910608854 A CN 201910608854A CN 110455419 A CN110455419 A CN 110455419A
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- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 229910001935 vanadium oxide Inorganic materials 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims abstract description 48
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 32
- 238000010894 electron beam technology Methods 0.000 claims description 24
- 238000005516 engineering process Methods 0.000 claims description 11
- 238000004528 spin coating Methods 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 238000007747 plating Methods 0.000 claims description 6
- 238000001771 vacuum deposition Methods 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 230000010354 integration Effects 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000004070 electrodeposition Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 13
- 238000005057 refrigeration Methods 0.000 abstract description 2
- 238000001514 detection method Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
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- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention discloses a kind of hanging type photodetectors based on vanadium oxide single-chip, comprising: pedestal, V6O13Single-chip, source electrode and drain electrode；The pedestal is spill, the V6O13The both ends of single-chip are fixed on the protrusion on the pedestal both sides, the V6O13Cavity, the V are formed between single-chip and the pedestal6O13Metal-coated films are distinguished in the upper surface at single-chip both ends, respectively as source electrode, drain electrode.The hanging type photodetector device architecture that the present invention uses, utilizes V6O13Single-chip and substrate it is hanging, greatly reduce V6O13Fever is led between single-chip and substrate, is improved the signal-to-noise ratio of detector, is significantly improved the photoelectric properties of device.It is provided by the invention to be based on V6O13The hanging type photoelectric device of single-chip realizes 0.4-8.8 μm of visible-middle infrared broad spectrum photoelectric respone, and the response time reaches Millisecond, is expected to the candidate material as third generation non-refrigeration infrared detector.
Description
Technical field
The present invention relates to photoelectric sensor technology fields, and in particular to a kind of hanging type photoelectricity based on vanadium oxide single-chip
Detector and preparation method thereof.
Background technique
Infrared photoelectric detector is an important civil and military technology.Ministry of National Defence, various countries, government and enterprise are all just
In actively research technique, nearly half a century, the scientific and technological rapid development of micro Process and semiconductor material is infrared technique
Reliable detection material and technical foundation are provided, the booming and application study of infrared detection technique is promoted.
At present with VOx, quasi- VO2And amorphous silicon membrane be detect material third generation non-refrigeration infrared detector realized
Commercialization, but these technologies only grasp by a small number of developed countries such as the U.S., Europe and Japan at present.In contrast, China
It starts to walk in terms of infrared detection technique evening, small investment.It is blocked in face of foreign technology, development is also very slow, at present domestic non-cause
The research of cold infrared detector is still in the preparation of detection material and array device production phase.The also base in terms of detecting material selection
The VO of this continuity foreign countriesxFilm, further to push China's autonomous innovation, China should select a kind of novel infrared detecting materials
Candidate material as China's infrared detector.In addition, non-refrigerated infrared detector is using the fuel factor of infra-red radiation come real
Now to the detection of object.Since infrared energy is small, in order to obtain biggish detectable signal, the signal-to-noise ratio of detector is improved,
The thermal conductivity between detector and substrate is reduced frequently with micro-bridge structure.Currently based on VOxThe infrared detector of film is using
When micro-bridge structure, since its mechanical hardness is low, detector is easy damaged, fracture, causes device yield low, although can use
Lower than stress silicon nitride film as supporting layer, but this method significantly increases the preparation process and difficulty of device.
Therefore, be badly in need of in industry researching and developing at present it is a kind of there is infrared acquisition ability, and have low-heat lead, high mechanical strength
Material is detected to replace VOxFilm, convenient for developing the detector from suspension support structure.
Summary of the invention
The purpose of the invention is to overcome above the shortcomings of the prior art, provide a kind of based on vanadium oxide monocrystalline
Hanging type photodetector of piece and preparation method thereof.
The purpose of the present invention is realized by the following technical solution:
A kind of hanging type photodetector based on vanadium oxide single-chip, comprising: pedestal, V6O13Single-chip (vanadium oxide list
Chip), source electrode and drain electrode；The pedestal is spill, the V6O13The both ends of single-chip are fixed on the pedestal both sides
Protrusion, the V6O13Cavity, the V are formed between single-chip and the pedestal6O13It plates respectively the upper surface at single-chip both ends
Metallic film, respectively as source electrode, drain electrode.
Preferably, the pedestal includes supporting layer and the first substrate；First substrate is horizontal plate, the supporting layer
The both ends of the upper surface of first substrate are fixed on, groove is formed, the protrusion on the pedestal both sides is the supporting layer.
Preferably, the supporting layer is Cu film, with a thickness of 500nm.
Preferably, the pedestal is the second substrate of the concave shaped of integration.
Preferably, the recess width of the pedestal is 100-200 μm.
Preferably, the V6O13Single-chip width is 10-50 μm, and length is greater than or equal to 500 μm.
Preferably, the V6O13The metallic film of the upper surface plating at single-chip both ends is same or different, the V6O13It is single
The metallic film of the upper surface plating at chip both ends is gold or silver.
A kind of preparation method of the hanging type photodetector based on vanadium oxide single-chip, comprising:
S1 makes pedestal；
S2, in V6O13The upper surface spin coating electron beam resist of single-chip；And in V6O13On single-chip determine source electrode and
The position of drain electrode, by developing, being fixed the electron beam resist of removal source electrode and drain electrode position, in V6O13On single-chip
Using vacuum coating technology deposited metal film, finally the electron beam resist other than metal film is removed with acetone, obtains source electricity
Pole, drain electrode；
S3 will prepare the V of source electrode, drain electrode6O13The both ends of single-chip are fixed on the protrusion on the pedestal both sides, obtain
To based on V6O13The hanging type photodetector of single-chip.
Preferably, step S1 includes: successively to carry out ultrasound clearly to the first substrate using acetone, deionized water and alcohol
It washes；The spin coating electron beam resist in the first substrate cleaned up；Both ends in the first substrate determine the position of supporting layer,
By developing, being fixed the electron beam resist at removal supporting layer position, made later using vacuum coating technology deposited metal film
For supporting layer, finally the electron beam resist other than supporting layer is removed with acetone, obtains the pedestal of spill.
Preferably, step S1 further include: it is clear that ultrasound successively is carried out to the second substrate using acetone, deionized water and alcohol
It washes；The spin coating electron beam resist in the second substrate cleaned up；The second substrate fovea superior groove location is determined, then by aobvious
Electron beam resist at shadow, fixing removal groove location, uses the second substrate of etchant later, forms groove；Finally use
Acetone removes electronic light photoresist and extra etching agent, obtains the second substrate of spill.
The present invention has the advantage that compared with the existing technology
(1) the hanging type photodetector provided by the invention based on vanadium oxide single-chip, finds V for the first time6O13(oxidation
Vanadium) have excellent photodetection performance, realize it is visible-in infrared (0.4-8.8 μm) wide spectrum photodetection, response speed
Degree reaches millisecond (52ms) rank, there is the possibility of the candidate material as infrared detector.
(2) the hanging type device architecture that photodetector provided by the invention uses, utilizes V6O13Single-chip and substrate
Vacantly, V is greatly reduced6O13Thermal conductivity between single-chip and substrate improves the signal-to-noise ratio of detector, significantly improves device
Photoelectric properties (compare non-hanging type structure photoelectric device, photoelectric response speed improves nearly three orders of magnitude).
(3) V that the present invention uses6O13Single-chip, the big, high mechanical strength with size, convenient for the production of device, using outstanding
Hollow structure is without increasing supporting layer to prevent device failure.
Detailed description of the invention
Fig. 1 is the schematic diagram of the section structure of the hanging type photodetector based on vanadium oxide single-chip of embodiment 1.
Fig. 2 is the schematic diagram of the section structure of the hanging type photodetector based on vanadium oxide single-chip of embodiment 2.
Fig. 3 (a) be embodiment 1 in based on the hanging type photodetector of vanadium oxide single-chip in 0.1V bias, wavelength
For the response characteristics to light of different capacity under the laser irradiation of 405nm.
Fig. 3 (b) be embodiment 1 in based on the hanging type photodetector of vanadium oxide single-chip in 0.1V bias, wavelength
For the response characteristics to light of different capacity under the laser irradiation of 660nm.
Fig. 3 (c) be embodiment 1 in based on the hanging type photodetector of vanadium oxide single-chip in 0.1V bias, wavelength
For the response characteristics to light of the laser irradiation different capacity of 1500nm.
Fig. 3 (d) be embodiment 1 in based on the hanging type photodetector of vanadium oxide single-chip in 0.1V bias, wavelength
For the response characteristics to light of different capacity under 8.8 μm of laser irradiations.
Fig. 4 is the photoelectric response speed characteristic curve of existing non-hanging type device.
Fig. 5 is the photoelectric response speed of the hanging type photodetector based on vanadium oxide single-chip provided in embodiment 1
Characteristic curve.
Wherein the first substrate of 11-, 12- groove, 13- supporting layer, 14-V6O13Single-chip, 15- source electrode, 16- drain electrode；
The second substrate of 21-.
Specific embodiment
Present invention will be further explained below with reference to the attached drawings and examples.
Embodiment 1
Referring to Fig. 1, a kind of hanging type photodetector based on vanadium oxide single-chip, comprising: pedestal, V6O13Single-chip
14, source electrode 15 and drain electrode 16；The pedestal is spill, the V6O13The both ends of single-chip 14 are fixed on the pedestal two
The protrusion on side, the V6O13Cavity, the V are formed between single-chip 14 and the pedestal6O13The upper surface at 14 both ends of single-chip
Metal-coated films respectively, respectively as source electrode 15, drain electrode 16.
In the present embodiment, the pedestal includes supporting layer 13 and the first substrate 11；First substrate 11 is horizontal plate,
The supporting layer 13 is fixed on the both ends of the upper surface of first substrate 11, forms groove 12, the protrusion on the pedestal both sides
For the supporting layer 13.The supporting layer 13 is Cu film, with a thickness of 500nm.
In the present embodiment, 12 width of groove of the pedestal is 150 μm.The V6O1314 width of single-chip is 25 μm, length
It is 600 μm.Because of the V6O13It forms cavity between single-chip 14 and the pedestal, realizes hanging type device architecture, therefore this implementation
Example based on V6O13The hanging type photodetector of single-chip 14 uses hanging type optoelectronic device structure.It is described in the present embodiment
V6O13The metallic film of the upper surface plating at 14 both ends of single-chip is identical, the V6O13The metal of the upper surface plating at 14 both ends of single-chip
Film is gold.
The preparation method of the hanging type photodetector based on vanadium oxide single-chip 14, comprising:
S1 makes pedestal；Specifically, step S1 includes:
Successively the first substrate 11 is cleaned by ultrasonic using acetone, deionized water and alcohol；Described first for 10 ×
The quartz plate is successively carried out ultrasonic cleaning 15 minutes using acetone, deionized water and alcohol by the quartz plate of 15 × 1.2mm,
Ensure the cleannes of substrate.
Spin coating a layer thickness is the PMMA electron beam resist of 50nm in the first substrate 11 cleaned up；By
Mark is write in SEM-EBL system, the both ends in the first substrate 11 determine the position of supporting layer 13, by developing, being fixed removal
Later one layer of Cu film is deposited as supporting layer 13 using vacuum coating technology in electron beam resist at 13 position of supporting layer,
Electron beam resist other than supporting layer 13 is finally removed with acetone with a thickness of 500nm, obtains the pedestal of spill by middle Cu.
S2, in V6O13Upper surface spin coating a layer thickness of single-chip 14 is the PMMA electron beam resist of 50nm；By
Mark is write in SEM-EBL system, in V6O13The position that source electrode 15 and drain electrode 16 are determined on single-chip 14 by developing, is determined
Shadow removes the electron beam resist of source electrode 15 and 16 position of drain electrode, in V6O13It is steamed on single-chip 14 using vacuum coating technology
Au film is plated, wherein the electron beam resist other than metal film is finally removed with acetone with a thickness of 50nm, obtain source electrode by Au
15, drain electrode 16.
S3 will prepare the V of source electrode 15, drain electrode 166O13The both ends of single-chip 14 are fixed on the pedestal with silver paste
The protrusion (supporting layer 13) on both sides is obtained based on V6O13The hanging type photodetector of single-chip 14.Photodetector it is photosensitive
Area is located at 12 top of groove, realizes V6O13Single-chip 14 is isolated with the first substrate 11, reduces V6O1314 He of single-chip
Thermal conductivity between first substrate 11.
Wherein, the V6O13Single-chip 14 is detection material.V6O13It is a kind of barium oxide of mixed valence, tests at present
On rarely have people that can synthesize, compared to well-known VO2、V2O5It is compared with other vanadium oxides, people are to V6O13Research it is considerably less.
It is provided by the invention to be based on V6O13The hanging type photodetector of single-chip 14, finds V for the first time6O13Single-chip 14 has excellent
Photoelectric properties, or even also have photoresponse to 8.8 μm of middle infrared wavelength.As Fig. 3 (a) -3 (d) successively illustrates the present embodiment
Based on V6O13The response characteristics to light of 14 hanging type photodetector different capacity under 0.1V bias, different wavelengths of light of single-chip,
Different wave length is followed successively by 405nm wavelength laser, 660nm wavelength laser, 1550nm wavelength laser, 8.8 mum wavelength laser.Pass through figure
3 (a) -3 (d) test result is it is found that provided by the invention be based on V6O13The photoelectric device of the non-hanging type of single-chip 14 can be realized
It can be seen that-in infrared (0.4-8.8 μm) wide spectrum photodetection ability, response speed, and can be up to millisecond rank (52ms)
Steady operation under atmosphere.Therefore, in terms of infrared acquisition, V6O13Single-chip 14 is likely to become its candidate material for detecting material.
Compared to current VOxFilm, V6O13Single-chip 14 has the advantages that lower thermal conductivity and high mechanical strength, convenient for developing from the branch that suspends
The detector of support structure.
In order to further prove hanging type provided in this embodiment photodetector beneficial effect, setting be based on V6O13
The photoelectric device of the non-hanging type of single-chip 14 is referring to device, and photoelectric response performance is as shown in Figure 4, it can be seen that its photoelectricity is rung
It is long between seasonable.Photoelectric current rises to for 90% time from 10% as the rising edge response time when taking illumination, is 25s；When cancelling light
Photoelectric current drops to for 10% time from 90% as the failing edge response time, is 30s.
And the photoelectric response speed of the photodetector of hanging type provided in this embodiment is tested as shown in figure 5, can be bright
Aobvious to find out, the response time is very short, and it is the rising edge response time that photoelectric current, which rises to 90% time from 10%, when taking illumination,
For 52ms；Photoelectric current drops to for 10% time from 90% as the failing edge response time when cancelling light, is 62ms.Therefore, it compares
The photoelectric device of existing non-hanging type, the response speed of the photoelectric device of hanging type improve nearly 3 orders of magnitude.This is because
Hanging type structure can reduce device and the direct thermal conductivity of substrate with effective.Meanwhile the result also illustrates, is based on V6O13Single-chip
14 hanging type photodetector is that photoelectric current is what photo-thermal effect generated.
Embodiment 2
Referring to fig. 2, embodiment 2 the difference from embodiment 1 is that, the pedestal be integration concave shaped the second substrate
21.Step S1 includes:
Successively the second substrate 21 is cleaned by ultrasonic using acetone, deionized water and alcohol；Second substrate 211 be 10 ×
The quartz plate of 15 × 1.2mm.
Spin coating a layer thickness is the electron beam resist of the PMMA of 50nm in the second substrate 21 cleaned up；By
Mark is write in SEM-EBL system, determines 21 upper groove of the second substrate, 12 position, then passes through development, fixing removal groove 12
The electron beam resist at place is set, is used the second substrate of etchant 210 minutes later, groove 12 is formed；Finally removed with acetone
Electronic light photoresist and extra etching agent obtain the second substrate 21 of spill.
Above-mentioned specific embodiment is the preferred embodiment of the present invention, can not be limited the invention, and others are appointed
The change or other equivalent substitute modes what is made without departing from technical solution of the present invention, are included in protection of the invention
Within the scope of.
Claims (10)
1. a kind of hanging type photodetector based on vanadium oxide single-chip characterized by comprising pedestal, V6O13Single-chip,
Source electrode and drain electrode；
The pedestal is spill, the V6O13The both ends of single-chip are fixed on the protrusion on the pedestal both sides, the V6O13Monocrystalline
Cavity, the V are formed between piece and the pedestal6O13Metal-coated films are distinguished in the upper surface at single-chip both ends, respectively as source
Electrode, drain electrode.
2. the hanging type photodetector according to claim 1 based on vanadium oxide single-chip, which is characterized in that the bottom
Seat includes supporting layer and the first substrate；First substrate is horizontal plate, and the supporting layer is fixed on first substrate
The both ends of upper surface, form groove, and the protrusion on the pedestal both sides is the supporting layer.
3. the hanging type photodetector according to claim 2 based on vanadium oxide single-chip, which is characterized in that the branch
Support layer is Cu film, with a thickness of 500nm.
4. the hanging type photodetector according to claim 1 based on vanadium oxide single-chip, which is characterized in that the bottom
Seat is the second substrate of the concave shaped of integration.
5. the hanging type photodetector according to claim 1 based on vanadium oxide single-chip, which is characterized in that the bottom
The recess width of seat is 100-200 μm.
6. the hanging type photodetector according to claim 1 based on vanadium oxide single-chip, which is characterized in that described
V6O13Single-chip width is 10-50 μm, and length is greater than or equal to 500 μm.
7. the hanging type photodetector according to claim 1 based on vanadium oxide single-chip, which is characterized in that described
V6O13The metallic film of the upper surface plating at single-chip both ends is same or different, the V6O13The upper surface plating at single-chip both ends
Metallic film is gold or silver.
8. a kind of system of the hanging type photodetector based on vanadium oxide single-chip described in -7 any one according to claim 1
Preparation Method characterized by comprising
S1 makes pedestal；
S2, in V6O13The upper surface spin coating electron beam resist of single-chip；And in V6O13Source electrode and electric leakage are determined on single-chip
The position of pole, by developing, being fixed the electron beam resist of removal source electrode and drain electrode position, in V6O13It is used on single-chip
Vacuum coating technology deposited metal film is finally removed the electron beam resist other than metal film with acetone, obtains source electrode, leakage
Electrode；
S3 will prepare the V of source electrode, drain electrode6O13The both ends of single-chip are fixed on the protrusion on the pedestal both sides, obtain base
In V6O13The hanging type photodetector of single-chip.
9. preparation method according to claim 8, which is characterized in that step S1 includes:
Successively the first substrate is cleaned by ultrasonic using acetone, deionized water and alcohol；
The spin coating electron beam resist in the first substrate cleaned up；Both ends in the first substrate determine the position of supporting layer
It sets, by developing, being fixed the electron beam resist at removal supporting layer position, uses vacuum coating technology deposited metal film later
As supporting layer, finally the electron beam resist other than supporting layer is removed with acetone, obtains the pedestal of spill.
10. preparation method according to claim 8, which is characterized in that step S1 further include:
Successively the second substrate is cleaned by ultrasonic using acetone, deionized water and alcohol；
The spin coating electron beam resist in the second substrate cleaned up；The second substrate fovea superior groove location is determined, then by aobvious
Electron beam resist at shadow, fixing removal groove location, uses the second substrate of etchant later, forms groove；Finally use
Acetone removes electronic light photoresist and extra etching agent, obtains the second substrate of spill.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113551782A (en) * | 2021-09-18 | 2021-10-26 | 西安中科立德红外科技有限公司 | Chip structure compatible with semiconductor integrated circuit CMOS (complementary Metal oxide semiconductor) process and preparation method thereof |
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