CN100516794C - Hemi-spherical shape and spherical two-photon response semiconductor photoelectric detector - Google Patents
Hemi-spherical shape and spherical two-photon response semiconductor photoelectric detector Download PDFInfo
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Abstract
The invention relates to the hemispherical and spherical two-photon response semiconductor photodetector for the ultrashort optical pulse measurement system, the optoelectronic integrated system and the optical communication system. The hemispherical two-photon response semiconductor photodetector comprises the semiconductor hemisphere (1), the metal electrode pairs (2, 2') and the micro lens (3), and its features are: the radius of the semiconductor hemisphere (1) is less than the work distance of the micro lens (3), and the sphere center of the semiconductor hemisphere (1) locates in the focus of the micro lens (3), and the metal electrode pairs (2, 2') locates in the plane of the semiconductor hemisphere (1), and the incident parallel light (4) passes the focus of the micro lens (3), incident vertical to the spherical surface of the semiconductor hemisphere (1), and going ahead along the radius direction, and finally the focus of the focused beam falls at the spherical center, and imposing the DC voltage to the metal electrode pairs (2, 2'), by the measurement of the optical current, to achieve a relative measurement of the incident light power.
Description
Technical field
The invention belongs to information science and technical field, be specifically related to a kind of semisphere and spherical two-photon response semiconductor photoelectric detector that can be used for ultrashort light pulse measuring system, photoelectricity integrated system and optical communication system.
Technical background
Last century the nineties, someone begins the normal optical electric explorer is used as the two-photon response photodetector, be used for constructing optics auto-correlation system, measure ultrashort light pulse [Y.Takagi, T.Kobayashi, K.Yoshihara, and S.Imamura, Optics Letters 17,658 (1992); L.P.Barry, P.G..Bollond, J.M.Dudley, J.D.Harvey, and R.Leonhardt, Electronics Letters, 32,1922 (1996)].They focus on incident beam on the ordinary flat type photodetector with lens, have replaced frequency-doubling crystal and photomultiplier with a two-photon response semiconductor photoelectric detector.Identical with common semiconductor photo detector aspect the photocurrent measurement, not only simplified optics auto-correlation system greatly, and made system become convenient suitable.
But the remolding sensitivity of Gou Zao two-photon response photodetector is lower like this, can only be used for measuring peak power at tens watts, even the above ultrashort light pulse of a few hectowatt.Therefore the someone has developed waveguide type two-photon response photodetector [T.K.Liang afterwards, H.K.Tsang, I.E.Day, J.Drake, A.P.Knights, andM.Asghari, Applied Physics Letters, 81,1323 (2002)], utilize to increase the sensitivity that the operating distance of incident light and semiconductor material improves photodetector.Just utilize microcobjective that incident light is focused on the inlet end of waveguide type photodetector, make incident light then, photon as much as possible is absorbed by two-photon response, export stronger photocurrent by sufficiently long waveguide.But the manufacturing process of this device is very complicated.
When photon energy but when inciding on the semiconductor material greater than half light beam of energy gap less than the energy gap of semiconductor material, if the power density of incident light is enough high, then can produce intrinsic and absorb the electron excitation in the semiconductor material valence band to conduction band.This phenomenon is called as two-photon response.Utilize the photodetector of two-photon response principle work, be called the two-photon response photodetector.It is identical with common semiconductor photo detector in many aspects, has three with the key distinction of common semiconductor photo detector: (1) with the photon energy definition, and its responding range is between half and energy gap of semiconductor material energy gap.(2) power density of the photocurrent of two-photon response photodetector output and incident light square is directly proportional.(3) need in use incident beam to be focused on the two-photon response photodetector, be used for improving optical power density with lens.
Except above 3 points, other aspects do not have the different of essence with common semiconductor photo detector, come the design and fabrication two-photon response semiconductor photoelectric detector so can use for reference the technology of common semiconductor photo detector design and fabrication aspect, used electronic circuit equally also can be used for reference the used metering circuit of common semiconductor photo detector during measuring light power.
So it is significant inventing a kind of highly sensitive and simple two-photon response photodetector of manufacturing process.
Summary of the invention
The purpose of this invention is to provide a kind of semisphere and spherical two-photon response semiconductor photoelectric detector, the characteristics of such photodetector are square being directly proportional of power density of photocurrent and the incident light of output.Be mainly used in optics auto-correlation device at present, be used for measuring ultrashort laser pulse.The technology of making the photodetector of being invented is common optical technology and semiconductor technology.
The semisphere two-photon response semiconductor photoelectric detector by semiconductor hemisphere, metal electrode to forming with microcobjective, it is characterized in that: the radius of semiconductor hemisphere is less than the operating distance of microcobjective, the centre of sphere of hemisphere is positioned at the focus place of microcobjective, metal electrode is to being positioned at the plane of semiconductor hemisphere, the directional light of incident after microcobjective focuses on perpendicular to the sphere incident of hemisphere, advance along radial direction, the focus of last focused beam drops on centre of sphere place, and two-photon response mainly occurs in centre of sphere place.
This detector can be to photon energy less than the energy gap of semiconductor material but survey greater than half the power of incident light of energy gap.
This semisphere two-photon response semiconductor photoelectric detector in use, the axis normal of microcobjective is in the plane of hemisphere, and passes through the centre of sphere.Will focus on the directional light of incident with microcobjective, focused beam is hung down as for the sphere incident of hemisphere, advance along radial direction, the focus of last focused beam drops on centre of sphere place just, and two-photon response mainly occurs in centre of sphere place.
According to the detection light wavelength, select semiconductor material with suitable energy gap.And without limits to the kind of material, can select many kinds of semiconductor materials such as elemental semiconductors (for example silicon, germanium and adamas etc.), compound semiconductor materials (for example III-V family material gallium arsenide, gallium phosphide and gallium nitride etc., II-VI family material oxidation zinc, zinc telluridse and zinc sulphide etc.), alloy semiconductor material (for example gallium arsenide-phosphide indium of the Aluminum gallium arsenide of ternary system, quaternary system etc.).The light wavelength of selecting for use main foundation to survey of semiconductor material is determined.Under the suitable situation of energy gap, the cheap more cost of material is low more.
The used condenser lens of two-photon response semiconductor photoelectric detector is generally selected microscopical object lens for use, and numerical aperture (NA) is the bigger the better.The prevailing value aperture is big more, and operating distance is short more.After material is selected, determine the radius of semiconductor hemisphere or ball according to the operating distance of selected microcobjective.The radius of hemisphere or ball must be less than the operating distance of microcobjective.Arrive any degree without limits as for little, as long as it is can process, the smaller the better.With the semiconductor material hemisphere that the optical lens process technology processes, require sphere and plane are polished.During use, focus on the directional light of incident with microcobjective, make the sphere incident of focused beam perpendicular to hemisphere, advance along radial direction, the focus of last focused beam drops on centre of sphere place just, and two-photon response mainly occurs in centre of sphere place.In order to reduce the reflection of sphere, can be with the ball surface plating anti-reflection film of common optical coating technology, with further raising detector sensitivity at semiconductor hemisphere.
Two metal electrodes of semisphere two-photon response semiconductor photoelectric detector are made in the plane of semiconductor hemisphere.Metal electrode does not have specific (special) requirements with semi-conductive the contact, can be Ohmic contact, can be Schottky Barrier Contact yet.So the range of choice to metal material is very big, metal electrode can aluminium, any metal material of vacuum coating easily such as gold, also can be alloy material.
Two metal electrodes of above-mentioned semisphere two-photon response semiconductor photoelectric detector all are positioned at the plane of semisphere semiconductor material, and two kinds of structures can be arranged: a kind of structure is that the center of circle is positioned at the circular electrode at centre of sphere place and the electrode pair that the annular electrode concentric with it formed; Another kind of structure is that the strip electrode opposite end can be sharp with respect to two of the centre of sphere symmetry electrode pairs fan-shaped or strip electrode is formed, and is circle or flat, referring to Fig. 1.
When using as the two-photon response photodetector, metal electrode on apply DC voltage, the measurement by photogenerated current that illumination is produced can realize incident optical power is carried out relative measurement.
The operating distance of microcobjective is the smaller the better, generally can be selected between 1.0～6.0 millimeters.Semiconductor hemisphere can select energy gap at 0.5～10.0 electron-volt semi-conducting material manufacturing, and its radius is the smaller the better, generally can be selected between 0.5～3.0 millimeter.The radius of circular electrode generally can be selected between 0.1～1.0 millimeter, and the internal diameter of annular electrode generally can be selected between 0.2～1.5 millimeter, and the external diameter of annular electrode generally can be selected between 0.3～3.0 millimeter; The angle of sector electrode generally can be selected between 10 degree～90 degree, and the distance between the tip generally can be selected between 0.05～1.0 millimeter; The width of strip electrode generally can be selected between 0.05～1.0 millimeter, and the distance between strip electrode generally can be selected between 0.05～1.0 millimeter; Add DC voltage scope generally can be selected between 1～500 volt concrete data based concrete condition and deciding.
Spherical two-photon response semiconductor photoelectric detector is by the semiconductor hemisphere of two globulates of combining closely, metal electrode is to forming with microcobjective, it is characterized in that: the material of two semiconductor hemisphere is identical, the radius of two semiconductor hemisphere is less than the operating distance of microcobjective, the centre of sphere of hemisphere is positioned at the focus place of microcobjective, metal electrode is to being positioned at wherein the plane of (being generally first a semiconductor hemisphere) semiconductor hemisphere, the directional light of incident after microcobjective focuses on perpendicular to the sphere incident of hemisphere, advance along radial direction, the focus of last focused beam drops on centre of sphere place, and two-photon response mainly occurs in centre of sphere place.
This detector can be to photon energy less than the energy gap of semiconductor material but survey greater than half incident intensity or power of energy gap.
For spherical two-photon response semiconductor photoelectric detector, one of them semiconductor hemisphere (being generally first semiconductor hemisphere) is exactly foregoing semisphere two-photon response semiconductor photoelectric detector, electrode on this hemisphere baseplane is that two with respect to centre of sphere symmetry are fan-shaped or strip electrode is right, the strip electrode opposite end can be sharp, and is circle or flat.Then another is not done the plane of the hemisphere of electrode (i.e. second semiconductor hemisphere), combine closely, constitute spherical two-photon response semiconductor photoelectric detector with the plane of semisphere detector.Need to prove that the hemispherical rim of not doing electrode is ground off symmetrically, be connected so that the outside of two electrodes exposed with external circuit.So this detector is not complete ball, referring to Fig. 2.
During use, will focus on the directional light of incident with microcobjective equally, shine on the hemisphere that is coated with electrode, focused beam is hung down as for the sphere incident of hemisphere, advance along radial direction, the focus of last focused beam drops on centre of sphere place just.Because two-photon response mainly occurs in centre of sphere place, the incident light of two-photon response does not take place, be transferred to another hemisphere sphere after, be reflected back toward centre of sphere place, two-photon response can take place once more.In order to improve the reflection of incident light rate that two-photon response does not take place, with further raising two-photon response efficient, can be with the hemisphere surface plating highly reflecting films of common optical coating technology at plated electrode not.On two electrodes, apply DC voltage during use,, realize incident optical power is carried out relative measurement, referring to Fig. 2 by measurement to photogenerated current.
Semiconductor hemisphere in the two-photon response semiconductor photoelectric detector of these two kinds of structures not only has the function of photodetector, function [the Chen Zhanguo that also has solid immersion lens simultaneously, Jia Gang, and YiMaobin, Journal of Physics D:Applied Physics.34,3078 (2001)].Because solid immersion lens can improve optical power density, so the sensitivity of semisphere and spherical two-photon response semiconductor photoelectric detector highly sensitive a lot of than common plate shaped two-photon response photodetector.If n then can be improved on the sensitivity theory of semisphere and spherical two-photon response semiconductor photoelectric detector in the refractive index n of material＞1
4Doubly.And their manufacturing technology is simple relatively, is common optical technology and semiconductor technology.
Description of drawings
Fig. 1 (a): semisphere two-photon response semiconductor photoelectric detector synoptic diagram;
Fig. 1 (b): the circular electrode of semisphere two-photon response semiconductor photoelectric detector is to synoptic diagram;
Fig. 1 (c): the sector electrode of semisphere two-photon response semiconductor photoelectric detector is to synoptic diagram;
Fig. 1 (d): the strip electrode of semisphere two-photon response semiconductor photoelectric detector is to synoptic diagram;
Fig. 2 (a): spherical two-photon response semiconductor photoelectric detector synoptic diagram;
Fig. 2 (b): the sector electrode of spherical two-photon response semiconductor photoelectric detector is to synoptic diagram;
Fig. 2 (c): the strip electrode of spherical two-photon response semiconductor photoelectric detector is to synoptic diagram;
As shown in Figure 1, the name of each several part is called: semiconductor hemisphere 1, metal electrode be to 2, and 2 ', microcobjective 3, incident is detected light 4; As shown in Figure 2, spherical two-photon response semiconductor photoelectric detector is by two Hemisphere 1,1 ' combines, and for extraction electrode, the hemisphere 1 ' edge of not doing electrode removes a part symmetrically, Exposing bar shaped or sector electrode pair, thereby conveniently be connected with external circuit. Such as Fig. 1 (d) and Fig. 2 (c) institute Show that the strip electrode opposite end can be sharp, circle or flat.
Embodiment:
Embodiment 1:
1. the testing laser wavelength is 1.3 microns, and photon energy is 0.95 electron-volt, and the photon energy of its frequency doubled light is 0.95 * 2=1.8 electron-volt.Because the energy gap of gallium arsenide is 1.42 electron-volts, refractive index is about 3.4, so select semi-insulating GaAs material semisphere two-photon response photodetector.
2. selecting numerical aperture (NA) for use is 0.3, and operating distance is that 6 millimeters microcobjective focuses on.The radius of gallium arsenide hemisphere is defined as 3 millimeters.
3. utilize common optical lens process technology, it is 3 millimeters hemisphere that GaAs material is processed into radius.And sphere and plane carried out common optical polish.Error is ± 0.01 millimeter, and smooth finish is 2 grades.
4. utilize conventional semiconductor technology in the plane of hemisphere, to make metal electrode.Way AM aluminum metallization electrode in the plane of hemisphere with vacuum vapor plating.The radius of the circular aluminium electrode at centre of sphere place is elected 0.5 millimeter as, and the outer spacing of the interior ring of ring electrode and circular electrode is 0.5 millimeter on every side, 2 millimeters of the width of ring.
5. ready-made semisphere two-photon response semiconductor photoelectric detector core is contained on the base that designs for it.Base is circular metal base, does a central electrode that insulate with the metal base at circle centre position.Two electrodes are extracted with traditional semiconductor technology by central electrode and base.
6. adjust light path by the requirement of front when using, the directional light of incident is focused on microcobjective, make the sphere incident of focused beam perpendicular to hemisphere, advance along radial direction, the focus of last focused beam drops on centre of sphere place just.Referring to Fig. 1.Two-photon response mainly in the generation of centre of sphere place, produces electronics, the hole is right.Apply 25 volts DC voltage, can use galvanometer measuring light electric current, can use lock-in amplifier measuring light electric current to continuous laser, thereby the power of incident light is carried out relative measurement less than 5 milliwatts for continuous laser less than 100 milliwatts.This detector is very high for peak power, reaches tens watts even the upward measurement of the pulsed light of hectowatt, and effect can be better.
Embodiment 2:
1. the testing laser wavelength is 1.06 microns, and photon energy is 1.17 electron-volts, and the photon energy of its frequency doubled light is 1.17 * 2=2.34 electron-volt.Because the energy gap of zinc telluridse is 2.26 electron-volts, refractive index is about 2.7, so select the zinc telluridse material semisphere two-photon response photodetector of involuntary doping.
2. selecting numerical aperture (NA) for use is 0.3, and operating distance is that 6 millimeters microcobjective focuses on.The radius of zinc telluridse hemisphere is defined as 3 millimeters.
3. utilize the optical lens process technology, it is 3 millimeters hemisphere that zinc telluridse materials processing is become radius.And to sphere and plane polishing.Error is ± 0.01 millimeter, and smooth finish is 2 grades.
4. utilize conventional semiconductor technology in the plane of hemisphere, to make metal electrode.Method deposit gold electrode in the plane of hemisphere with sputter.Make the fan-shaped gold electrode of two symmetries in centre of sphere both sides, fan-shaped central angle is elected 15 degree as, and the distance at two fan-shaped tips is 0.3 millimeter.
5. ready-made semisphere two-photon response semiconductor photoelectric detector core is contained on the base that designs for it.Base is circular ambroin base, makes metal electrode in both sides, the center of circle, with traditional semiconductor technology two electrodes is extracted.
6. adjust light path by the requirement of front when using, the directional light of incident is focused on microcobjective, make the sphere incident of focused beam perpendicular to hemisphere, advance along radial direction, the focus of last focused beam drops on centre of sphere place just.Referring to Fig. 1.Two-photon response mainly in the generation of centre of sphere place, produces electronics, the hole is right.Apply 30 volts DC voltage, can use galvanometer measuring light electric current, can use lock-in amplifier measuring light electric current to continuous laser, thereby the power of incident light is carried out relative measurement less than 10 milliwatts for continuous laser less than 200 milliwatts.This detector measurement peak power is very high, reaches tens watts even go up the pulsed light of hectowatt, and effect can be better.
Embodiment 3:
1. the wavelength of testing laser is 1.55 microns, and photon energy is 0.80 electron-volt, and the photon energy of its frequency doubled light is 0.80 * 2=1.60 electron-volt.Because the energy gap of silicon is 1.12 electron-volts, refractive index is about 3.4, so select the silicon materials of nearly intrinsic to make the two-photon response photodetector.
2. selecting numerical aperture (NA) for use is 0.3, and operating distance is that 6 millimeters microcobjective focuses on.The radius of silicon hemisphere is defined as 3 millimeters.
3. utilize the optical lens process technology, it is 3 millimeters hemisphere that silicon materials are processed into radius.And to sphere and plane polishing.Error is ± 0.01 millimeter, and smooth finish is 2 grades.
4. utilize conventional semiconductor technology in the plane of hemisphere, to make metal electrode.Method AM aluminum metallization electrode in the plane of hemisphere with vacuum evaporation.Make the fan-shaped aluminium electrode of two symmetries in centre of sphere both sides, fan-shaped central angle is elected 15 degree as, and the distance at two fan-shaped tips is 0.3 millimeter.
5. another silicon hemisphere of not making electrode, symmetrically hemispherical rim is ground off about 1 millimeter.Then this incomplete silicon hemisphere is combined balling-up with the silicon hemisphere of making electrode, and the outside of two electrodes is exposed, referring to Fig. 2.
6. ready-made ball-type two-photon response semiconductor photoelectric detector core is contained on the base that designs for it, base is the ambroin base of annular, two relative positions of the annulus on same diameter are made two metal electrodes of mutual insulating, with traditional semiconductor technology two electrodes are extracted.
7. adjust light path by the requirement of front when using, the directional light of incident is focused on microcobjective, make the sphere incident of focused beam perpendicular to hemisphere, advance along radial direction, the focus of last focused beam drops on centre of sphere place just.Referring to Fig. 2.Two-photon response mainly in the generation of centre of sphere place, produces electronics, the hole is right.Apply 50 volts DC voltage, can use galvanometer measuring light electric current, can use lock-in amplifier measuring light electric current to continuous laser, thereby the power of incident light is carried out relative measurement less than 5 milliwatts for continuous laser less than 100 milliwatts.This detector is very high for peak power, reaches tens watts even the upward measurement of the pulsed light of hectowatt, and effect can be better.
Claims (9)
1, the semisphere two-photon response semiconductor photoelectric detector, by semiconductor hemisphere (1), metal electrode is to (2,2 ') and microcobjective (3) form, it is characterized in that: the radius of semiconductor hemisphere (1) is less than the operating distance of microcobjective (3), the centre of sphere of semiconductor hemisphere (1) is positioned at the focus place of microcobjective (3), metal electrode is to (2,2 ') be positioned at the plane of semiconductor hemisphere (1), the directional light of incident (4) after microcobjective (3) focuses on perpendicular to the sphere incident of semiconductor hemisphere (1), advance along radial direction, the focus of last focused beam drops on centre of sphere place, at metal electrode to (2,2 ') apply DC voltage on, realize incident optical power is carried out relative measurement by measurement to photogenerated current.
2, semisphere two-photon response semiconductor photoelectric detector as claimed in claim 1 is characterized in that: the material of semiconductor hemisphere (1) is elemental semiconductors, compound semiconductor materials or alloy semiconductor material.
3, semisphere two-photon response semiconductor photoelectric detector as claimed in claim 1 is characterized in that: metal electrode is Ohmic contact or Schottky Barrier Contact to (2,2 ') with contacting of semiconductor hemisphere (1).
4, semisphere two-photon response semiconductor photoelectric detector as claimed in claim 3 is characterized in that: metal electrode is that the center of circle is positioned at the circular electrode at centre of sphere place and the electrode pair that the annular electrode concentric with it formed to (2,2 ').
5, semisphere two-photon response semiconductor photoelectric detector as claimed in claim 3, it is characterized in that: metal electrode is to (2,2 ') be with respect to two of the centre of sphere symmetry electrode pairs fan-shaped or strip electrode is formed, the strip electrode opposite end is sharp, circle or flat.
6, as claim 4 or 5 described semisphere two-photon response semiconductor photoelectric detectors, it is characterized in that: metal electrode is to being aluminium, gold or alloy material.
7, spherical two-photon response semiconductor photoelectric detector, semiconductor hemisphere (1 by two globulates of combining closely, 1 '), metal electrode is to (2,2 ') and microcobjective (3) form, it is characterized in that: two semiconductor hemisphere (1,1 ') material is identical, two semiconductor hemisphere (1,1 ') radius is less than the operating distance of microcobjective (3), two semiconductor hemisphere (1,1 ') the centre of sphere is positioned at the focus place of microcobjective (3), metal electrode is positioned at the plane of first semiconductor hemisphere (1) to (2,2 '), and the edge of second semiconductor hemisphere (1 ') is ground off symmetrically, thereby metal electrode exposed with external circuit the outside of (2,2 ') be connected; The directional light of incident (4) after microcobjective (3) focuses on perpendicular to the sphere incident of first semiconductor hemisphere (1), advance along radial direction, the focus of last focused beam drops on centre of sphere place, at metal electrode to (2,2 ') apply DC voltage on, realize incident optical power is carried out relative measurement by measurement to photogenerated current.
8, spherical two-photon response semiconductor photoelectric detector as claimed in claim 7, it is characterized in that: metal electrode is to (2,2 ') be with respect to two of the centre of sphere symmetry electrode pairs fan-shaped or strip electrode is formed, the strip electrode opposite end is sharp, circle or flat.
9, semisphere two-photon response semiconductor photoelectric detector as claimed in claim 8 is characterized in that: metal electrode is to being aluminium, gold or alloy material.
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| CN102540408A (en) * | 2011-12-26 | 2012-07-04 | 吉林大学 | Hyper-hemispherical electro-optical solid immersion lens |
| CN106784126B (en) * | 2017-01-19 | 2019-01-25 | 中国科学院上海技术物理研究所 | Room temperature photoconductive detector part under a kind of electromagnetically induced potential well semiconductor forbidden band |
| JP2020519881A (en) * | 2017-05-08 | 2020-07-02 | ベロダイン ライダー， インク． | LIDAR data collection and control |
| CN109950333B (en) * | 2019-04-01 | 2023-09-22 | 李正 | Spherical box-shaped three-dimensional detector and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3930729A (en) * | 1973-06-29 | 1976-01-06 | International Business Machines Corporation | Interferometer apparatus incorporating a spherical element of index of refraction of two |
| US4636631A (en) * | 1983-04-08 | 1987-01-13 | Societe Anonyme De Telecommunications | Photoconducting detector in optical immersion |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US3930729A (en) * | 1973-06-29 | 1976-01-06 | International Business Machines Corporation | Interferometer apparatus incorporating a spherical element of index of refraction of two |
| US4636631A (en) * | 1983-04-08 | 1987-01-13 | Societe Anonyme De Telecommunications | Photoconducting detector in optical immersion |
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