CN109950321A - A kind of p type field effect transistor and preparation method thereof based on tungsten oxide - Google Patents
A kind of p type field effect transistor and preparation method thereof based on tungsten oxide Download PDFInfo
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- CN109950321A CN109950321A CN201910225445.2A CN201910225445A CN109950321A CN 109950321 A CN109950321 A CN 109950321A CN 201910225445 A CN201910225445 A CN 201910225445A CN 109950321 A CN109950321 A CN 109950321A
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Abstract
The present invention relates to a kind of p type field effect transistor and preparation method thereof based on tungsten oxide, makees substrate using solid electrolyte, places mask plate on solid electrolyte substrate, reserves a device channel；Then one layer of insulation film is deposited；Then mask plate is removed, WO 3 film is deposited；Then mask plate, evaporation source, drain electrode are reapposed；Finally in solid electrolyte back side vapor deposition gate electrode, fieldtron is formed.Tungstic acid is applied to transistor by the present invention, Au makees source, drain electrode, device is prepared using vacuum thermal evaporation method, simple process, while using solid electrolyte as gate medium, due to the extremely strong long-range ion-electron coupled characteristic of electrolyte, when gate electrode is far from channel region, still be able to generate extremely strong regulating and controlling effect to the electric conductivity of channel, reduce in device fabrication processes to alignment request, obtain the transistor for being rendered as p-type field-effect modulating action.
Description
Technical field
The present invention relates to transistor arts more particularly to a kind of p type field effect transistor based on tungsten oxide and its
Preparation method.
Background technique
Metal oxide semiconductor material relies on itself high mobility, high visible light transmittance and excellent electricity
Stability becomes the main study subject of novel flat-plate display field.In numerous transition metal oxides, tungsten oxide is by depth
Enter research, wherein tungstic acid is a kind of wide bandgap semiconductor materials, forbidden bandwidth 2.4eV~3.5eV, because it is with excellent
Different electron transport property, photoelectrochemical behaviour and photocatalysis performance etc., especially form of film can be used for advanced technology and answer
With.Traditional silicon dioxide insulating dielectric constants are too small, and the carrier concentration of WO 3 film channel is caused often to be not enough to
Show field-effect characteristic.How to increase interface charge density becomes the difficult point for preparing tungstic acid field effect transistor.It is existing
Research has shown that one layer of liquid electrolyte such as ionic liquid of addition, can table under electrostatic effect as gate medium in transistor arrangement
Reveal electric double layer phenomenon, so that active layer carrier concentration be induced significantly to increase and form field-effect characteristic.But ionic liquid
Body stability difference and preparation process are difficult, and it is integrated to carry out device, therefore how to prepare compatible with solid electronic device
Tungsten oxide film transistor becomes an emphasis obstacle for hindering oxide semiconductor element development.On the other hand, preparation at present
The field effect transistor based on tungstic acid be N-type, and make completed semiconductor circuit and need N-type and p-type field-effect device
Part, and the p-type fieldtron based on tungsten oxide is not able to achieve yet.
Summary of the invention
For the technical problems in the prior art, the primary purpose of the present invention is that providing a kind of based on tungsten oxide
P type field effect transistor and preparation method thereof.
Based on above-mentioned purpose, the present invention is at least provided the following technical solutions:
A kind of preparation method of the p type field effect transistor based on tungsten oxide comprising:
Solid electrolyte piece is provided as substrate；
Deposition exposes the insulation film of channel region on one surface of substrate；
On the insulation film and the channel region deposits tungstic acid active layer；
Evaporation source, drain electrode on the active layer；
In another surface depositing gate electrode of the substrate.
Further, the solid electrolyte piece is lithium ion ceramics.
Further, the insulation film with a thickness of 10~50nm, the insulation film is Al2O3、SiO2、Si3N4、
HfO2Or ZrO2。
Further, the tungstic acid active layer be noncrystalline membrane, the tungstic acid active layer with a thickness of
100-400nm。
Further, the tungstic acid active layer with a thickness of 300nm.
Further, the source, drain electrode and gate electrode are at least one of Au, Ag, Cu.
Further, the width of the channel region is less than 100 μm.
Further, the deposition of the tungstic acid active layer includes being higher than 99.9% tungsten trioxide nano with purity
Powder is raw material, and the pressure of adjustment vacuum evaporation chamber is 4 × 10-4~5 × 10-4Pa, evaporation boat temperature be about 1000 DEG C
When, vacuum evaporation tungstic acid.
A kind of p type field effect transistor based on tungsten oxide comprising: the insulation positioned at one surface of solid electrolyte piece is thin
Film is provided with strip-shaped channel region in the insulation film, on the insulation film and three oxygen of the channel region
Change tungsten active layer, the source-drain electrode on the tungstic acid active layer, and is located at another table of solid electrolyte piece
The gate electrode in face.
Further, the tungstic acid active layer be noncrystalline membrane, the tungstic acid active layer with a thickness of
100-400nm, the insulation film with a thickness of 10~50nm, the material of the insulation film is Al2O3、SiO2、Si3N4、
HfO2Or ZrO2, the width of the channel region is less than 100 μm.
Compared with prior art, the present invention at least has the following beneficial effects:
(1) tungstic acid is applied to transistor by the present invention, and element manufacturing all uses vacuum coating method,
Simple process, operation are readily accomplished, with current ic process compatibility.
(2) present invention is using solid electrolyte as gate medium, since the extremely strong long-range ion-electron coupling of electrolyte is special
Property, it when gate electrode is far from channel region, still is able to generate extremely strong regulating and controlling effect to the electric conductivity of channel, so reducing device
In part manufacturing process to alignment request.Also, using solid electrolyte as gate medium, obtain being rendered as p-type field-effect modulation
The transistor of effect, hole mobility are better than 10-2cm/Vs。
Detailed description of the invention
Fig. 1 is the p type field effect transistor structural schematic diagram the present invention is based on tungsten oxide.
Fig. 2 is the output characteristic curve figure of the resulting p type field effect transistor based on tungsten oxide of the embodiment of the present invention.
Fig. 3 is the transfer characteristic curve figure of the resulting p type field effect transistor based on tungsten oxide of the embodiment of the present invention.
Appended drawing reference: 01 is gate electrode, and 02 is solid-state electrolyte layer, and 03 is insulating layer, and 04 is tungstic acid active layer, 05
It is source, drain electrode.
Specific embodiment
Present invention will now be described in further detail with reference to the embodiments and the accompanying drawings, but embodiments of the present invention are unlimited
In this.
Embodiment
Fig. 1 is the structural schematic diagram of the p type field effect transistor the present invention is based on tungsten oxide, provides solid electrolyte piece
02, solid electrolyte piece can be lithium ion ceramics, the insulation film 03 positioned at 02 surface of solid electrolyte piece, insulation film 03
With a thickness of 10~50nm, the material of the insulation film 03 is Al2O3、SiO2、Si3N4、HfO2Or ZrO2.It is set in insulation film 03
It is equipped with strip-shaped channel region, the width in strip-shaped channel region is less than 100 μm.On the insulation film and the channel region
Tungstic acid active layer 04, tungstic acid active layer 04 be noncrystalline membrane, with a thickness of 100-400nm.And it is located at three
Source-drain electrode 05 on tungsten oxide active layer 04 is provided with gate electrode on another surface of solid electrolyte piece 02.Source and drain electricity
Pole and gate electrode are at least one of Au, Ag, Cu.
The present invention regard solid electrolyte piece 02 as gate medium, since the extremely strong long-range ion-electron coupling of electrolyte is special
Property, it when gate electrode is far from channel region, still is able to generate extremely strong regulating and controlling effect to the electric conductivity of channel, so reducing device
In part manufacturing process to alignment request.
Relative to above-mentioned field effect transistor, the present invention also provides a kind of p type field effect transistors based on tungsten oxide
Preparation method:
Step 1 takes the solid electrolyte piece having a size of 5mm to make substrate, in this embodiment, solid electrolyte piece be lithium from
Sub- ceramics.
Step 2, the mask plate that 80 μm of width are placed on the solid electrolyte substrate of step 1, reserve a channel, then sink
One layer of insulation film of product, in this embodiment, which is aluminum oxide, in other embodiments, insulation film
Layer can be SiO2、Si3N4、HfO2Or ZrO2Equal materials.Mask plate is removed after the completion.Insulation film is in this step with three oxidations two
Aluminium target is raw material, is obtained by atomic layer deposition method, and deposition thickness is 10~50nm, preferably 10nm.
Step 3, on the aluminum oxide insulation film of step 2, pass through vacuum thermal evaporation deposit tungstic acid amorphous state
Film is to obtain active layer.WO 3 film with a thickness of 100-400nm, preferred 300nm, weighs 0.2g in this embodiment
Tungsten trioxide nano powder is as evaporation source, and the purity of the tungsten trioxide nano powder is higher than 99.9%, in coating machine cavity
It vacuumizes until pressure reaches 4 × 10-4After Pa, the evaporation boat power supply of carrying tungsten trioxide nano powder adds to 110A, evaporation boat
Temperature is about 1000 DEG C, evaporation thickness 300nm.
Step 4, on the tungstic acid layer that step 3 prepares, pass through hot evaporation sedimentary origin, drain electrode, source-drain electrode
It is metal electrode, specifically can be at least one of Au, Ag, Cu.It is evaporation source that 0.2g Au is taken in the embodiment, in plated film
It is vacuumized in machine cavity body until pressure reaches 4 × 10-4After Pa, evaporation boat power supply adds to 90A.Electrode evaporation thickness 60nm.
Step 5 overturns solid electrolyte on the basis of step 4, and at back, coating conductive silver paste is as gate electrode, at it
In his embodiment, gate electrode can also be Au or Cu.
It can be seen that of the invention be applied to transistor for tungstic acid as active layer, the preparation of device uses Vacuum Deposition
Embrane method, simple process, operation are readily accomplished, can be with current ic process compatibility.
Fig. 2-3 be the output characteristic curve of the resulting p type field effect transistor based on tungsten oxide of the embodiment of the present invention with
And transfer characteristic curve figure.
By Fig. 2 it is known that working as grid voltage VGWhen greater than cut-in voltage (close to 0V), drain current IsdHardly follow leakage
Pole tension VsdIncrease and increase；Work as VGWhen less than cut-in voltage, IsdWith VsdIncrease and increase, and VGWhen negative sense increases,
Same VsdCorresponding IsdAlso it will increase.
By Fig. 3 it is known that the cut-in voltage of the embodiment is about 0.6V, can calculate device mobility be 7.6 × 10- 2cm2/Vs。
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by above-described embodiment
Limitation, other any changes, modifications, substitutions, combinations, simplifications made without departing from the spirit and principles of the present invention,
It should be equivalent substitute mode, be included within the scope of the present invention.
Claims (10)
1. a kind of preparation method of the p type field effect transistor based on tungsten oxide characterized by comprising
Solid electrolyte piece is provided as substrate；
Deposition exposes the insulation film of channel region on one surface of substrate；
On the insulation film and the channel region deposits tungstic acid active layer；
Evaporation source, drain electrode on the active layer；
In another surface depositing gate electrode of the substrate.
2. the preparation method according to claim 1, it is characterised in that: the solid electrolyte piece is lithium ion ceramics.
3. preparation method according to claim 1 or 2, it is characterised in that: the insulation film with a thickness of 10~50nm,
The insulation film is Al2O3、SiO2、Si3N4、HfO2Or ZrO2。
4. the preparation method according to claim 3, it is characterised in that: the tungstic acid active layer is noncrystalline membrane,
The tungstic acid active layer with a thickness of 100-400nm.
5. the preparation method according to claim 4, it is characterised in that: the tungstic acid active layer with a thickness of 300nm.
6. the preparation method according to claim 3, it is characterised in that: the source, drain electrode and gate electrode be Au, Ag,
At least one of Cu.
7. the preparation method according to claim 1, which is characterized in that the width of the channel region is less than 100 μm.
8. the preparation method according to claim 4, which is characterized in that the deposition of the tungstic acid active layer includes, with
Tungsten trioxide nano powder of the purity higher than 99.9% is raw material, and the pressure of adjustment vacuum evaporation chamber is 4 × 10-4~5 ×
10-4Temperature when being about 1000 DEG C of Pa, evaporation boat, vacuum evaporation tungstic acid.
9. a kind of p type field effect transistor based on tungsten oxide, characterized in that it comprises: be located at one table of solid electrolyte piece
The insulation film in face is provided with strip-shaped channel region in the insulation film, is located on the insulation film and the channel
The tungstic acid active layer in region, the source-drain electrode on the tungstic acid active layer, and it is located at the solid state electrolysis
The gate electrode on another surface of matter piece.
10. the field effect transistor according to claim 9, which is characterized in that the tungstic acid active layer is amorphous state
Film, the tungstic acid active layer with a thickness of 100-400nm, the insulation film with a thickness of 10~50nm, it is described absolutely
The material of edge film is Al2O3、SiO2、Si3N4、HfO2Or ZrO2, the width of the channel region is less than 100 μm.
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| CN110455419A (en) * | 2019-07-08 | 2019-11-15 | 暨南大学 | Hanging type photodetector and preparation method thereof based on vanadium oxide single-chip |
| CN111276603A (en) * | 2020-02-17 | 2020-06-12 | 中国科学院微电子研究所 | Oxide-based electronic synapse devices and arrays thereof |
| CN113013253A (en) * | 2021-02-24 | 2021-06-22 | 中国科学院宁波材料技术与工程研究所 | P-type thin film transistor, preparation method thereof and phase inverter |
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