CN101872787A - Metal oxide thin film transistor and preparation method thereof - Google Patents
Metal oxide thin film transistor and preparation method thereof Download PDFInfo
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- CN101872787A CN101872787A CN 201010182715 CN201010182715A CN101872787A CN 101872787 A CN101872787 A CN 101872787A CN 201010182715 CN201010182715 CN 201010182715 CN 201010182715 A CN201010182715 A CN 201010182715A CN 101872787 A CN101872787 A CN 101872787A
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- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 61
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 61
- 239000010409 thin film Substances 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 50
- 230000007704 transition Effects 0.000 claims abstract description 47
- 238000000034 method Methods 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 12
- 238000004544 sputter deposition Methods 0.000 claims abstract description 7
- 230000008569 process Effects 0.000 claims abstract description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 55
- 229910052760 oxygen Inorganic materials 0.000 claims description 55
- 239000001301 oxygen Substances 0.000 claims description 55
- 230000004888 barrier function Effects 0.000 claims description 28
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 239000010408 film Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 8
- 239000007772 electrode material Substances 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000002210 silicon-based material Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 238000005566 electron beam evaporation Methods 0.000 claims description 2
- 239000007792 gaseous phase Substances 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- 229920000620 organic polymer Polymers 0.000 claims description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 2
- 238000007639 printing Methods 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 2
- 238000002207 thermal evaporation Methods 0.000 claims description 2
- 238000001771 vacuum deposition Methods 0.000 claims description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract description 9
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 abstract 1
- 238000003949 trap density measurement Methods 0.000 abstract 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 229910003437 indium oxide Inorganic materials 0.000 description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 7
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 6
- 229910052725 zinc Inorganic materials 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910007717 ZnSnO Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
Abstract
The invention discloses a metal oxide thin film transistor and a preparation method thereof. The metal oxide thin film transistor is composed of a grid electrode, an insulating layer, a transition layer, a semiconductor layer, a drain electrode and a source electrode, wherein the grid electrode, the insulating layer, the transition layer and the semiconductor layer are sequentially connected with each other from bottom to top; the drain electrode and the source electrode are positioned on the semiconductor layer; the transition layer and the semiconductor layer are prepared by means of sputtering with the same target being adopted in the process of sputtering, the material of the target is (In2O3)x(Ga2O3)y(ZnO)z, wherein x, y and z are not less than 0 but not more than 1, and x+y+z is equal to 1; and the transition layer and the insulating layer include excellent contact property so as to effectively lower carrier trap density between contact interfaces of the insulating layer and the transition layer as well as enhance output current of the transistor and improve electrical stability. The source electrode and the drain electrode can form outstanding ohmic contact with the semiconductor layer, thereby effectively reducing off-state current, raising on/off ratio of current and improving electronic carrier mobility.
Description
Technical field
The present invention relates to a kind of thin-film transistor, particularly relate to a kind of metal oxide thin-film transistor and preparation method thereof, this thin-film transistor is mainly used in the active driving of organic light emitting display, liquid crystal display and Electronic Paper, also can be used for integrated circuit.
Background technology
In recent years, based on the thin-film transistor of metal oxide because its mobility height, light transmission is good, membrane structure is stable, preparation temperature is low and low cost and other advantages is subjected to increasing attention.The development main target of metal oxide thin-film transistor is to be used for aspects such as flat panel display, flexible electronic device, transparent electronics and transducer.Aspect flat panel display, the main at present thin-film transistor that uses materials such as amorphous silicon hydride (a-Si:H) or polysilicon, however the limitation of hydrogenated amorphous silicon material mainly shows photaesthesia, the low (＜1cm of electron mobility
2/ Vs) and aspect such as electrical parameter poor stability, and the limitation of polysilicon membrane is mainly reflected in aspects such as electrical properties lack of homogeneity, preparation temperature height and cost height.
Metal oxide semiconductor material mainly comprises zinc oxide (ZnO), indium oxide gallium (InGaO), zinc-tin oxide (ZnSnO), indium oxide gallium zinc (InGaZnO) etc.The higher (1～100cm of thin-film transistor electron mobility based on these metal oxides
2/ Vs), preparation temperature low (＜400 ℃), cost low (only needing a common sputtering technology to finish) and continuous firing good stability well below the fusing point of glass.Just because of this, traditional transistorized trend of silicon materials process film of substituting is arranged in field, flat panel display field especially organic light emitting display (OLED), be subjected to the concern and the broad research of academia and industry based on the thin-film transistor of metal oxide.
Up to the present, the thin-film transistor based on metal oxide of report all is only to contain single metal oxide layer, promptly has only semiconductor layer, in order to realize ohmic contact preferably, source-drain electrode adopts the higher metal platinum of price (Pt) or these precious metals of metallic gold (Au) usually, and device might realize that just leakage current is less than 10-
12A, current on/off ratio is greater than 10
8Performance.
Summary of the invention
The objective of the invention is developing low-cost and prepare the transistorized technology of high performance thin film, a kind of metal oxide thin-film transistor that can improve the interface contact performance between insulating barrier and semiconductor layer, semiconductor layer and the source-drain electrode simultaneously and preparation method thereof is proposed, adopt low-cost metal Ni to realize transistorized low off-state current, high electron mobility and current on/off ratio as the source-drain electrode material.
The present invention is in order to improve the contact performance of insulating barrier and metal oxide layer, source-drain electrode (Ni) and metal oxide layer simultaneously, improve the electrical stability of device, metal oxide transition zone by rich oxygen content has preferably with insulating barrier, and the interface contacts, the metal oxide semiconductor layer of low oxygen content has good interface to contact with metallic nickel, uses the electric property of metallic nickel as the thin-film transistor of source-drain electrode material thereby can significantly improve; Wherein the low oxygen content metal oxide layer mainly plays semi-conductive effect; The electric property of rich oxygen content metal oxide layer mainly plays a transition role between semiconductor and insulator, and transition zone can improve the interface contact between semiconductor layer and the insulating barrier, reduces the charge defects at interface, therefore can reduce off-state current (I
Off), improve electron mobility, improve current on/off ratio (I
On/ I
Off), improve the transistor electricity performance.Adopt low more rich metallic nickel of reserves (Ni) of price or metal oxide to do drain electrode and source electrode material, in the industrialization production process, have at the low-cost advantage that guarantees under the high performance prerequisite of device.
Purpose of the present invention is achieved through the following technical solutions:
A kind of metal oxide thin-film transistor is made of grid, insulating barrier, transition zone, semiconductor layer, drain electrode and source electrode; Be connected successively by grid, insulating barrier, transition zone and semiconductor layer from top to bottom; Drain electrode and source electrode are positioned at above the semiconductor layer; Described transition zone and semiconductor layer prepare by the method for sputter, and use same target in sputter procedure, and the material of target is (In
2O
3)
x(Ga
2O
3)
y(ZnO)
z, wherein 0≤x, y, z≤1, and x+y+z=1; By the control oxygen feeding amount, the oxygen content that makes the transition zone of preparing is greater than theoretical value (3x+3y+z)/(5x+5y+2z) when the preparation transition zone; When the preparation semiconductor layer, by the control oxygen feeding amount, the oxygen content that makes the transition zone of preparing is less than theoretical value (3x+3y+z)/(5x+5y+2z).
Described insulating barrier is insulating metal oxide or insulating polymeric material.Preferred aluminium oxide of described insulating metal oxide or tantalum oxide.
Described insulating barrier also can be preferably silicon dioxide or silicon nitride material.
Described grid is metal, metal oxide or highly doped silicon materials.
Described drain electrode and source electrode material are metal Ni, perhaps metal oxide.
A kind of preparation method of metal oxide thin-film transistor comprises the steps:
(1) on substrate, prepares grid;
(2) on grid, prepare insulating barrier; Described insulating barrier prepares with sputter or chemical gaseous phase deposition method, or described insulating layer film adopts thermal oxidation or the preparation of anodised method; If insulating barrier is the organic polymer insulating material, described insulating barrier prepares with spin coating or method of printing;
(3) on insulating barrier, prepare transition zone and semiconductor layer successively; Transition zone and semiconductor layer adopt the method preparation of sputter, use same target in sputter procedure, and the material of target is (In
2O
3)
x(Ga
2O
3)
y(ZnO)
z, wherein 0≤x, y, z≤1, and x+y+z=1; In preparation during transition zone, flow-rate ratio＞2 of control oxygen and argon gas make in the film of preparation oxygen content greater than theoretical value (3x+3y+z)/(5x+5y+2z); In preparation semiconductor layer process, flow-rate ratio＜0.1 of control oxygen and argon gas obtains in the film of actual fabrication oxygen content less than theoretical value (3x+3y+z)/(5x+5y+2z);
(4) preparation drain electrode and source electrode on semiconductor layer; Described drain electrode and source electrode adopt vacuum evaporation or sputtering method preparation, adopt photoetching or mask technique control drain electrode and source electrode shape, and the source-drain electrode material is a metallic nickel.
Described grid prepares with vacuum thermal evaporation, magnetron sputtering or electron beam evaporation technique; Or the highly doped silicon chip of grid, adopt photoetching or mask technique control gate patterns.
With respect to prior art, the present invention has following advantage and useful feature:
(1) transistor of the present invention comprises transition zone and semiconductor layer simultaneously, because transition zone is the metal oxide of rich oxygen content, it and insulating barrier have coupling preferably, equally, the semiconductor layer of source-drain electrode and low oxygen content metal oxide has better ohmic contact, this transistor arrangement can effectively reduce off-state current under the situation of using low-cost Ni source-drain electrode, improve the electronic carrier mobility, obviously improves the on-off ratio of electric current.The double-decker of this different oxygen content is different from the layer of metal oxide skin(coating) that traditional semiconductor transistor has only the oxygen content homogeneous.
(2) the rich oxygen content metal oxide layer (transition zone) of metal oxide thin-film transistor of the present invention and low oxygen content metal oxide layer (semiconductor layer) can be finished with in a sputter procedure, the purpose of improving the interface contact can be reached, technology difficulty can be do not increased again.
Description of drawings
Fig. 1 thin-film transistor structure schematic diagram based on metal oxide of the present invention.
The shape of template that uses when Fig. 2 prepares source-drain electrode, wherein L is a channel length, D is a channel width.
Fig. 3 is based on the output characteristic curve of the thin-film transistor of the metal oxide of transition zone and semiconductor layer, promptly under different grid voltages, and the relation of voltage between the output current of device and the source-drain electrode.
Fig. 4 is based on the transfer characteristic curve of the thin-film transistor of the metal oxide of transition zone and semiconductor layer, when promptly between source-drain electrode, applying 5V voltage, and the relation between output current and the grid voltage.
Embodiment
The present invention is described further below in conjunction with drawings and Examples, but the scope of protection of present invention is not limited to the scope of embodiment statement.
As shown in Figure 1, a kind of metal oxide thin-film transistor is made of grid 1, insulating barrier 2, transition zone 3, semiconductor layer 4, drain electrode 51 and source electrode 52; Grid 1, insulating barrier 2, transition zone 3, semiconductor layer 4 connect successively from top to bottom; Drain electrode 51 and source electrode 52 are positioned at above the semiconductor layer 4.Described transition zone 3 is identical with the elemental composition of the metal oxide of semiconductor layer 4, but the content difference of oxygen element in the elemental composition.Transition zone 3 and semiconductor layer 4 all can prepare by the method for sputter, and can use same target in sputter procedure, and target can be indium oxide (In
2O
3), gallium oxide (Ga
2O
3) and zinc oxide (ZnO) in one or more combination, i.e. (In
2O
3)
x(Ga
2O
3)
y(ZnO)
z, wherein 0≤x, y, z≤1, and x+y+z=1.The oxygen content of transition zone 3 and semiconductor layer 4 metal oxides is by oxygen (O in sputter procedure
2) with the flow-rate ratio (O of argon gas (Ar)
2/ Ar) control (O
2/ Ar) big more, oxygen content in the metal oxide layer is high more, prepared transition zone 3 is rich oxygen content metal oxides, oxygen element content wherein is greater than [(3x+3y+z)/(5x+5y+2z)], semiconductor layer 4 is low oxygen content metal oxides, oxygen element content wherein is less than [(3x+3y+z)/(5x+5y+2z)], wherein 0≤x, y, z≤1, and x+y+z=1.Wherein the oxygen content of transition zone and semiconductor layer is by oxygen (O in sputter procedure
2) with the flow-rate ratio (O of argon gas (Ar)
2/ Ar) control O
2/ Ar ratio is big more, and the oxygen content in the metal oxide layer is high more, otherwise, O
2/ Ar ratio is more little, and the oxygen content in the metal oxide layer is low more.
After grid 1 adds voltage, in transition zone 3, form carrier channels, conduction current appears between drain electrode 51 and source electrode 52, and source electrode 51 and drain electrode 52 are exactly the two ends of switch like this, and grid just plays the effect of Control current.
Use highly doped silicon chip as grid 1, the silicon dioxide of thermal oxidation one deck 300nm thickness records its permittivity C as insulating barrier 2 in the above
iBe 11.4nF/cm
2
The oxygen content of prepared metal oxide layer is measured by X ray electron spectrum (XPS), and the oxygen element content of transition zone 3 is 77.2% after measured, and obviously the oxygen content (77.2%) of transition zone 3 is greater than the theoretical value oxygen content (57.1%) of this target; The oxygen element content of semiconductor layer 4 is 27.6%, and obviously the oxygen content (27.6%) of semiconductor layer 4 is less than the theoretical value oxygen content (57.1%) of this target.
Use the method for direct current (DC) sputter on semiconductor layer 4, to plate metallic nickel (Ni) respectively again as drain electrode and source electrode, its figure is controlled with mask plate, the figure consistent with mask patterns (as shown in Figure 2) of preparation, the width of raceway groove and length are respectively 3mm and 0.4mm, breadth length ratio is 7.5: 1, and the thickness of Ni film is 200nm.
Prepared transistor is tested in air.Because indium oxide gallium zinc (InGaZnO) is n N-type semiconductor N material, 51 should add positive voltage so drain, source electrode 52 ground connection, grid 1 adds positive bias.Fig. 3 and Fig. 4 have provided transistorized output characteristic curve and transfer characteristic curve respectively.Fig. 3 shows that described thin-film transistor based on the transition zone 3 and the metal oxide of semiconductor layer 4 is the same with the thin-film transistor of other structure, all has typical saturation characteristic, but output current can be enough to drive organic light emitting display (OLED) pixel up to 0.7mA.The electron mobility that can calculate thin-film transistor from Fig. 4 is 11cm
2/ Vs, off-state current is low to 1.6 * 10
-12A, current on/off ratio is up to 10
8The result shows, this transistor can be good at realizing on-off action, and the main cause that can improve device performance is that insulating barrier silicon dioxide can have preferably that the interface contacts with the metal oxide (transition zone 3) of rich oxygen content, has reduced the carrier traps at interface.The metal oxide layer that has only one deck homogeneous if device does not have rich oxygen content metal oxide layer (transition zone 3), its poor-performing, data are listed in table 1.By table 1 contrast as can be known, increase transition zone 3, transistorized off-state current significantly reduces, and mobility and current on/off ratio but are improved, and illustrate that the electric property of the thin-film transistor of being invented has improved greatly.
Table 1
| Transistor arrangement | Mobility (cm 2/Vs) | Off-state current I off??(A) | Current on/off ratio I on/I off |
| The transistor that does not have the rich oxygen content metal oxide layer | ??9 | ??1×10 -10 | ??6×10 6 |
| The transistor that the rich oxygen content metal oxide layer is arranged | ??11 | ??1.6×10 -12 | ??4×10 8 |
Claims (8)
1. a metal oxide thin-film transistor is characterized in that: be made of grid, insulating barrier, transition zone, semiconductor layer, drain electrode and source electrode; Be connected successively by grid, insulating barrier, transition zone and semiconductor layer from top to bottom; Drain electrode and source electrode are positioned on the semiconductor layer; Described transition zone and semiconductor layer prepare by the method for sputter, and use same target in sputter procedure, and the material of target is (In
2O
3)
x(Ga
2O
3)
y(ZnO)
z, wherein 0≤x, y, z≤1, and x+y+z=1; By the control oxygen feeding amount, the oxygen content that makes the transition zone of preparing is greater than theoretical value (3x+3y+z)/(5x+5y+2z) when the preparation transition zone; When the preparation semiconductor layer, by the control oxygen feeding amount, the oxygen content that makes the transition zone of preparing is less than theoretical value (3x+3y+z)/(5x+5y+2z).
2. metal oxide thin-film transistor according to claim 1 is characterized in that: described insulating barrier is insulating metal oxide or insulating polymeric material.
3. metal oxide thin-film transistor according to claim 1 is characterized in that: described insulating metal oxide is aluminium oxide or tantalum oxide.
4. metal oxide thin-film transistor according to claim 1 is characterized in that: described insulating barrier is silicon dioxide or silicon nitride material.
5. metal oxide thin-film transistor according to claim 1 is characterized in that: described grid is metal, metal oxide or highly doped silicon materials.
6. metal oxide thin-film transistor according to claim 1 is characterized in that: described drain electrode and source electrode material are metal Ni.
7. the preparation method of the described metal oxide thin-film transistor of claim 1, its feature comprises the steps:
(1) on substrate, prepares grid;
(2) preparation insulating barrier; Described insulating barrier prepares with sputter or chemical gaseous phase deposition method, or described insulating layer film adopts thermal oxidation or anode oxidation method preparation; If insulating barrier is the organic polymer insulating material, described insulating barrier prepares with spin coating or method of printing;
(3) on insulating barrier, prepare transition zone and semiconductor layer successively; Transition zone and semiconductor layer adopt the method preparation of sputter, use same target in sputter procedure, and the material of target is (In
2O
3)
x(Ga
2O
3)
y(ZnO)
z, wherein 0≤x, y, z≤1, and x+y+z=1; In preparation during transition zone, flow-rate ratio＞2 of control oxygen and argon gas make in the film of preparation oxygen content greater than theoretical value (3x+3y+z)/(5x+5y+2z); In preparation semiconductor layer process, flow-rate ratio＜0.1 of control oxygen and argon gas obtains in the film of actual fabrication oxygen content less than theoretical value (3x+3y+z)/(5x+5y+2z);
(4) preparation drain electrode and source electrode on semiconductor layer; Described drain electrode and source electrode adopt vacuum evaporation or sputtering method preparation, adopt photoetching or mask technique control drain electrode and source electrode shape, and the source-drain electrode material is a metallic nickel.
8. the preparation method of metal oxide thin-film transistor according to claim 7 is characterized in that grid prepares with vacuum thermal evaporation, magnetron sputtering or electron beam evaporation technique; Or the highly doped silicon chip of grid, adopt photoetching or mask technique control gate patterns.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010182715 CN101872787A (en) | 2010-05-19 | 2010-05-19 | Metal oxide thin film transistor and preparation method thereof |
| PCT/CN2010/077434 WO2011143887A1 (en) | 2010-05-19 | 2010-09-29 | Metal oxide thin film transistor and manufacturing method thereof |
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| CN102169907A (en) * | 2010-12-30 | 2011-08-31 | 友达光电股份有限公司 | Thin film transistor and method of manufacturing the same |
| CN102403363A (en) * | 2011-10-27 | 2012-04-04 | 华南理工大学 | Double-layered oxide thin film transistor and preparation method thereof |
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| CN102623510A (en) * | 2012-03-19 | 2012-08-01 | 华南理工大学 | Thin film transistor with tantalum oxide insulation layer and preparation method of thin film transistor |
| CN102683423A (en) * | 2012-05-08 | 2012-09-19 | 东莞彩显有机发光科技有限公司 | Metal oxide thin film transistor with top gate structure and manufacturing method thereof |
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| US20090250693A1 (en) * | 2008-04-03 | 2009-10-08 | Hong-Han Jeong | Thin film transistor, display device, including the same, and associated methods |
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| CN103229305A (en) * | 2010-10-29 | 2013-07-31 | 希百特股份有限公司 | Metal oxide TFT with improved stability |
| CN102169907A (en) * | 2010-12-30 | 2011-08-31 | 友达光电股份有限公司 | Thin film transistor and method of manufacturing the same |
| CN102403363A (en) * | 2011-10-27 | 2012-04-04 | 华南理工大学 | Double-layered oxide thin film transistor and preparation method thereof |
| CN102420289A (en) * | 2011-10-28 | 2012-04-18 | 华南理工大学 | Tantalum-doped oxide semiconductor material and preparation method and application thereof |
| CN103178349A (en) * | 2011-12-26 | 2013-06-26 | 深圳光启高等理工研究院 | Microstructure processing method |
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| CN102623510A (en) * | 2012-03-19 | 2012-08-01 | 华南理工大学 | Thin film transistor with tantalum oxide insulation layer and preparation method of thin film transistor |
| CN102709312A (en) * | 2012-04-25 | 2012-10-03 | 北京大学 | Oxide thin-film, thin-film transistor and preparation method thereof |
| CN102709312B (en) * | 2012-04-25 | 2014-12-10 | 北京大学 | Oxide thin-film, thin-film transistor and preparation method thereof |
| CN102683423A (en) * | 2012-05-08 | 2012-09-19 | 东莞彩显有机发光科技有限公司 | Metal oxide thin film transistor with top gate structure and manufacturing method thereof |
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