CN101315957A - Method and device for forming PN junction on P type mercury cadmium telluride by laser process - Google Patents
Method and device for forming PN junction on P type mercury cadmium telluride by laser process Download PDFInfo
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- CN101315957A CN101315957A CN 200810036370 CN200810036370A CN101315957A CN 101315957 A CN101315957 A CN 101315957A CN 200810036370 CN200810036370 CN 200810036370 CN 200810036370 A CN200810036370 A CN 200810036370A CN 101315957 A CN101315957 A CN 101315957A
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Abstract
The invention relates to a laser processing method for forming a PN-junction on a P-typed Hg-Cd-Te material and a device thereof. The method comprises the following steps that: a pulse laser is focused on the surface of the P-typed Hg-Cd-Te material and the P-typed Hg-Cd-Te material is radiated in short time, thus forming a porous area melted and corroded on the material by the laser; the diameter of the pore is within a range from several micrometers to ten micrometers or so; an inversion area, namely an N-typed area is formed in the several micrometer area around the pore; the inversion area and the P-typed area at the periphery of the pore form a PN-junction area. The device of the invention consists of a femto-second laser, a deflecting mirror, a neutral density filter, a pupil, an aperture, a dichroic mirror, a lens, a CCD camera, a display and a workpiece platform. As the method of the invention has the advantages of laser direct writing, saves the lithography process step in the traditional junction-forming technique, leads the junction-forming process to be simplified and is beneficial to reducing the dead pixel caused by the process complexity. The method of the invention is completely compatible with other techniques of the prior art in the field such as read-out circuit technique and has direct and practical value.
Description
Technical field
The present invention relates to a kind of laser processing forms PN junction on P type mercury cadmium telluride method and device, belong to infrared photoelectric detector field based on the low-gap semiconductor mercury cadmium telluride.
Background technology
For a long time mercury cadmium telluride (HgCdTe) always as a kind of very important infrared photoelectric detector material at military infrared thermal imaging, aspect extensive application [Tang Dingyuan such as space flight and satellite infrared remote sensing, Tong Peiming, the low-gap semiconductor Infrared Detectors, semiconductor device and progress II, Science Press, 1991].Particularly be one of the development main flow [A.Rogalski in Infrared Detectors field in the world at present based on the light diode array device-infrared focal plane device (comprising the line array device of micromechanics scanning or the focal plane device of gazing type) of mercury cadmium telluride development, Infrared Detectors_Gordon and Breach Science, Amsterdam, 2000].In this technical field, it is the core of optical diode detector array technology that the PN junction of formation detector chip becomes the knot technology, mainly comprise methods [J.Rutkowski, Opto-Electron.Rev.12,123 (2004)] such as ion injection and ion etching at present in the world.Photoetching is a requisite processing step in these conventional methods, and Guan Lian photoetching gluing, a series of physical and chemical processes such as develop, the remove photoresist blind element that can increase photosensitive element array produces probability therewith, thereby the device yields is had a negative impact.
Summary of the invention
The objective of the invention is to defective, provide a kind of laser processing on P type mercury cadmium telluride, to form the method and the device of PN junction at the prior art existence.Method of the present invention not only effectively reduces process complexity, and has reduced the generation probability of the blind element rate that is caused by process complexity, make this method tradition have unique superiority.
For achieving the above object, the present invention adopts following technical proposals:
A kind of laser processing forms the method for PN junction on P type mercury cadmium telluride, it is characterized in that the surface of pulse laser focusing to P type mercury cadmium telluride, at short notice P type mercury cadmium telluride is carried out irradiation, thereby form by the hole district of laser ablation on this material, the diameter of hole is several microns to tens microns; Form inversion regime in several microns zones of hole periphery, i.e. N type district, PN junction district of p type island region formation of this inversion regime and hole periphery.
In above-mentioned method, control the size of hole by the focal spot of regulating laser power and laser focusing.
In above-mentioned method,, obtain the PN junction array district of linear array or face array by controlling the surface location of mobile workpiece to be machined.
A kind of laser processing forms the device of PN junction on P type mercury cadmium telluride, be applied in the above-mentioned method, comprise a laser and a work piece platform, it is characterized in that laser beam that laser penetrates is successively behind two deflecting mirrors, neutral-density filter, pupil, light billows, dichroic mirror, be subjected to the laser beam of dichroic mirror refraction to be radiated the workpiece that places on the work piece platform, and be transferred to display by the CCD shooting through the light beam of dichroic mirror through lens.
Above-mentioned light billows connect a computer, and by the unlatching blanking time of computer control light billows, thereby the control laser beam is to the time of surface of the work irradiation.
Above-mentioned laser is a femto-second laser, and the pulse laser of generation is a femtosecond laser.
Above-mentioned work piece platform is a piezoelectric ceramic displacement platform, by the displacement of piezoelectric ceramic control work piece platform.
With regard to physical principle, method of the present invention is based on the special role of mercury atom in mercury cadmium telluride.Theory thinks that the mercury room is played and is subjected to main effect that the mercury atom that adds the crack then serves as the alms giver in mercury cadmium telluride.Mercury binding energy in material is lower, and than being easier to diffusion, if the Cheng Jian of a certain local of material district mercury is broken, then mercury atom can spread rapidly to periphery.This makes that not only playing a large amount of mercury room that is subjected to main effect in the P-type material is occupied again, makes the crack mercury atom that adds with alms giver's effect increase greatly simultaneously again, causes the electrical transoid in peripheral region, hole district (being generally a few micro-meter scale scopes) thus.This mechanism is used to set forth the transoid [I.M.Baker and C.D.Maxey, J.Electron.Mater.30,682_2001] of the mercury cadmium telluride of explaining that ion etching causes, is equally applicable to explain that the laser ablation that the present invention proposes becomes the knot scheme.
The present invention compared with prior art, have the special remarkable advantage of following conspicuous outstanding substance: the present invention utilizes the laser beam of focusing to bombard P type mercury cadmium telluride surface at short notice and causes the hole district, form PN junction, can be applied directly to the structure infrared focal plane array device.Method of the present invention has the very black advantage of laser, has saved the lithographic process steps in traditional one-tenth knot technology, not only makes into the knot process and becomes succinctly, and help to reduce the blind element rate that process complexity causes.Fully compatible other existing technology of this field of this method such as reading circuit technology have direct practical value.
Description of drawings
Fig. 1 is laser processing forms the PN junction device on P type mercury cadmium telluride a structure principle chart.
Fig. 2 is the annular distance array optical microstructure figure that laser processing forms on P type mercury cadmium telluride.
Fig. 3 is the detection principle of laser induced chemical vapor deposition electric current spectrometer to PN junction.
Fig. 4 is the testing result of laser induced chemical vapor deposition electric current Pu Yi to laser ablation PN junction array.
Embodiment
Details are as follows in conjunction with the accompanying drawings for a preferred embodiment of the present invention:
This routine laser processing forms PN junction on P type mercury cadmium telluride method is: with the surface of pulse laser focusing to P type mercury cadmium telluride, in the short time, P type mercury cadmium telluride is carried out irradiation, thereby form by the hole district of laser ablation on this material, the diameter of hole is several microns to tens microns; Form inversion regime in several microns zones of hole periphery, i.e. N type district, PN junction district of p type island region formation of this inversion regime and hole periphery.
This routine laboratory sample is for utilizing the mercury cadmium telluride thin film material of liquid phase epitaxial technique growth on tellurium zinc cadmium substrate, epitaxial film thickness is 24 μ m, and surface coverage has the ZnS passivation layer of one deck 0.25 μ m.The Hall test provides carrier concentration P=2.4 * 10
16Cm
-3
Referring to Fig. 1, this routine laser processing comprises a laser (3) and a work piece platform (12) at the device that P type mercury cadmium telluride forms PN junction, the laser beam that it is characterized in that laser (3) ejaculation is successively behind two deflecting mirrors (4,5), a neutral-density filter (6), a pupil (7), a diaphragm (8), a dichroic mirror (9), be subjected to the laser beam of dichroic mirror refraction to be radiated the workpiece (11) that places on the work piece platform (12), and be transferred to display (2) by CCD (1) shooting through the light beam of dichroic mirror through lens (10).
Used laser (3) is 120fs for ti sapphire laser output pulse is wide, wavelength 800nm, maximum output energy 600 μ J.Neutral-density filter in the light path (6) is in order to regulate the laser beam current density, and pupil (7) also plays the effect of regulating luminous flux, and the time of a photoirradiation is by the unlatching interval determination of computer-controlled diaphragm (8).Double-colored deflecting mirror (9) makes the CCD optical monitoring system can monitor the position of hot spot at sample surfaces in the light path, can effectively suppress the interference by the 800nm light laser hot spot of sample reflection on the other hand.Sample is positioned on the work piece platform (12), and work piece platform (12) is that the sample displacement precision reaches 20nm by the piezoelectric ceramic displacement platform of piezoelectric ceramic (PZT) control displacement.Laser facula is directly controlled by computer program in the position of sample surfaces, so both can produce single etched hole on sample, also can predefined a series of photoengravings position, make up the etched hole pattern of an array.Fig. 2 provide the optical microphotograph of array part, laser ablation hole as shape appearance figure.Experimental data shows that laser intensity and radiated time all have tangible influence to the etching pattern.The corresponding from top to bottom laser ablation energy of three rounds given among Fig. 2 is respectively 100mW, 80mW and 50mW.
For the etching hole power of the photoelectric respone of corresponding PN junction and PN junction whether, can check by laser induced chemical vapor deposition electric current (LBIC) test, its detection method and principle are as shown in Figure 3.Make up electrode a pair of and base material formation ohmic contact at two ends, this a pair of electrode is connected in series formation one closed-loop path with galvanometer, as shown in Figure 3 away from the PN junction structure.When the laser beam that focuses on scans with respect to sample, if laser beam incident is to the PN junction district, photo-generated carrier will be by the internal electric field of PN junction separately, produce the photoproduction electromotive force, correspondingly cause the induced current of closed-loop path, the size of this photoproduction induced current reflects the power of PN junction photovoltaic effect.For the n-on-p structure that forms in the P type substrate shown in the accompanying drawing 3, the n district forms the opposite PN junction of a pair of internal electric field with the p district of the left and right sides.When the inswept n of light beam district, on the relation curve of the photogenerated current/facula position that is obtained, just present the photoresponse structure that a current polarity changes, two photocurrent response peaks are put corresponding to PN junction regional boundary face.Fig. 3 has schematically provided the photoelectric current/position curve of LBIC to a n-on-p PN junction structure.
The laser etching method that LBIC proposes the present invention forms the test result of PN junction and sees Fig. 4.From left to right three sets of curves are respectively to adopt 100mW among the figure, the LBIC test result in 80mW and several different laser pulse powers of the 50mW hole district that etching produces in 5 milliseconds of etch periods (how much patterns of etching are referring to accompanying drawing 2).Can see that 3 kinds of etched holes all present tangible PN junction photophase feature.Because our employed LBIC laser spot diameter only about 1 μ m, is far smaller than the interface size, regard point-source of light as so excite hot spot to be similar to, and the constant interval of entire curve just can be similar to the bulk of regarding the photovoltaic response district as.The space scale that double-head arrow is indicated from figure, although the etching laser pulse power difference in several holes, but the PN junction district yardstick effective scale of photosensitive unit in other words is all very approaching, numerical value be 25～26 μ m. in addition, laser ablation power has certain influence to the photovoltaic respective strengths of knot, response intensity is by etching power 50mW, and 80mW, 100mW present obvious increase tendency successively.In addition, experiment also finds, during above time of longer etch period such as a few tens of milliseconds, the knot electric field can have tangible asymmetry, and from our experimental result, choosing etching power is 50～80mW, etch period is 5 milliseconds, can provide the one-tenth knot effect of relatively optimizing.
Claims (7)
1. a laser processing forms the method for PN junction on P type mercury cadmium telluride, it is characterized in that the surface of pulse laser focusing to P type mercury cadmium telluride, at short notice P type mercury cadmium telluride is carried out irradiation, thereby form by the hole district of laser ablation on this material, the diameter of hole is several microns to tens microns; Form inversion regime in several microns zones of hole periphery, i.e. N type district, PN junction district of p type island region formation of this inversion regime and hole periphery.
2. laser processing according to claim 1 forms the method for PN junction on P type mercury cadmium telluride, it is characterized in that controlling by the focal spot of regulating laser power and laser focusing the size of hole.
3. laser processing according to claim 1 forms the method for PN junction on P type mercury cadmium telluride, it is characterized in that obtaining the PN junction array district of linear array or face array by controlling the surface location of mobile workpiece to be machined.
4. a laser processing forms the device of PN junction on P type mercury cadmium telluride, being applied to laser processing according to claim 1 forms in the method for PN junction on P type mercury cadmium telluride, comprise a laser (3) and a work piece platform (12), the laser beam that it is characterized in that laser (3) ejaculation is successively through two deflecting mirrors (4,5), a neutral-density filter (6), a pupil (7), a diaphragm (8), behind the dichroic mirror (9), be subjected to the laser beam of dichroic mirror refraction to be radiated the workpiece (11) that places on the work piece platform (12), and be transferred to display (2) by CCD (1) shooting through the light beam of dichroic mirror through lens (10).
5. laser processing according to claim 4 forms the method for PN junction on P type mercury cadmium telluride, it is characterized in that described diaphragm (8) connects a computer, by the unlatching blanking time of computer control diaphragm, thereby the control laser beam is to the time of surface of the work irradiation.
6. laser processing according to claim 4 forms the method for PN junction on P type mercury cadmium telluride, it is characterized in that described laser (1) is a femto-second laser, and the pulse laser of generation is a femtosecond laser.
7. laser processing according to claim 4 forms the method for PN junction on P type mercury cadmium telluride, it is characterized in that described work piece platform (12) is piezoelectric ceramic displacement platform, by the displacement of piezoelectric ceramic control work piece platform.
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101890575A (en) * | 2010-07-14 | 2010-11-24 | 中国科学院上海光学精密机械研究所 | Femtosecond laser parallel micromachining device based on Dammann grating and with real-time monitoring function |
| CN102248301A (en) * | 2011-01-13 | 2011-11-23 | 苏州德龙激光有限公司 | Crystalline silicon solar cell drilling equipment |
| CN103343390A (en) * | 2013-06-21 | 2013-10-09 | 中国科学院上海技术物理研究所 | P-type heat treatment process method of tellurium-cadmium-mercury vapor-phase epitaxial material |
| EP2838120A1 (en) * | 2013-08-12 | 2015-02-18 | Rigas Tehniska Universitate | Graded band gap p-n homojunction formation method in silicon |
| CN104384722A (en) * | 2014-10-28 | 2015-03-04 | 北京理工大学 | N-type doping-based femtosecond laser method for processing semiconductor |
| EP2879190A1 (en) | 2013-11-29 | 2015-06-03 | Rigas Tehniska Universitate | A method for formation of a graded band gap p-n homojunction in cadmium telluride |
| CN104889573A (en) * | 2015-06-02 | 2015-09-09 | 中国科学院上海技术物理研究所 | Method of using laser to cut tellurium cadmium mercury thin film |
| CN107154349A (en) * | 2017-04-12 | 2017-09-12 | 济南大学 | A kind of method that pulsed laser radiation auxiliary prepares semiconductor p n knots |
| CN108031992A (en) * | 2017-12-29 | 2018-05-15 | 苏州德龙激光股份有限公司 | The ultrafast systems of processing of LTCC and its method |
| CN110919169A (en) * | 2018-09-03 | 2020-03-27 | 大族激光科技产业集团股份有限公司 | Laser processing real-time detection device and method |
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2008
- 2008-04-21 CN CN 200810036370 patent/CN101315957A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101890575A (en) * | 2010-07-14 | 2010-11-24 | 中国科学院上海光学精密机械研究所 | Femtosecond laser parallel micromachining device based on Dammann grating and with real-time monitoring function |
| CN102248301A (en) * | 2011-01-13 | 2011-11-23 | 苏州德龙激光有限公司 | Crystalline silicon solar cell drilling equipment |
| CN103343390A (en) * | 2013-06-21 | 2013-10-09 | 中国科学院上海技术物理研究所 | P-type heat treatment process method of tellurium-cadmium-mercury vapor-phase epitaxial material |
| EP2838120A1 (en) * | 2013-08-12 | 2015-02-18 | Rigas Tehniska Universitate | Graded band gap p-n homojunction formation method in silicon |
| EP2879190A1 (en) | 2013-11-29 | 2015-06-03 | Rigas Tehniska Universitate | A method for formation of a graded band gap p-n homojunction in cadmium telluride |
| CN104384722A (en) * | 2014-10-28 | 2015-03-04 | 北京理工大学 | N-type doping-based femtosecond laser method for processing semiconductor |
| CN104889573A (en) * | 2015-06-02 | 2015-09-09 | 中国科学院上海技术物理研究所 | Method of using laser to cut tellurium cadmium mercury thin film |
| CN107154349A (en) * | 2017-04-12 | 2017-09-12 | 济南大学 | A kind of method that pulsed laser radiation auxiliary prepares semiconductor p n knots |
| CN108031992A (en) * | 2017-12-29 | 2018-05-15 | 苏州德龙激光股份有限公司 | The ultrafast systems of processing of LTCC and its method |
| CN110919169A (en) * | 2018-09-03 | 2020-03-27 | 大族激光科技产业集团股份有限公司 | Laser processing real-time detection device and method |
| CN110919169B (en) * | 2018-09-03 | 2021-12-10 | 大族激光科技产业集团股份有限公司 | Laser processing real-time detection device and method |
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