CN111735547A - Infrared temperature detecting element and temperature measuring method - Google Patents
Infrared temperature detecting element and temperature measuring method Download PDFInfo
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- CN111735547A CN111735547A CN202010764007.6A CN202010764007A CN111735547A CN 111735547 A CN111735547 A CN 111735547A CN 202010764007 A CN202010764007 A CN 202010764007A CN 111735547 A CN111735547 A CN 111735547A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J2005/202—Arrays
- G01J2005/204—Arrays prepared by semiconductor processing, e.g. VLSI
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Abstract
The invention provides an infrared temperature detecting element and a temperature measuring method, wherein a semiconductor is provided with at least one inverted pyramid structure on the surface; the invention also provides a method for measuring the temperature of the infrared temperature detecting element, which comprises the following steps that the metal electrode is in Schottky contact with the surface of the inverted pyramid structure, carriers in the metal electrode form electron hole pairs or hot carriers after being excited by incident photons, the flat ohmic contact electrode forms ohmic contact with the back surface of the semiconductor, the electron hole pairs or the hot carriers are formed after being excited by the carriers in the metal electrode and cross the Schottky barrier of the metal electrode and the semiconductor interface to form photocurrent, and the temperature value of a measured object is calculated according to the photocurrent signal.
Description
Technical Field
The present invention relates to a detecting element, and more particularly to an infrared temperature detecting element and a method for measuring temperature.
Background
Since the human beings know that food is cooked on fire, the simplest and widely used way for the intensity of energy is the physical phenomenon of thermal expansion, such as an alcohol or mercury thermometer, and the volume change of the alcohol or mercury liquid is generated as soon as the temperature changes, and the temperature change of a few degrees can be known from the changed scale. With the progress of technology, a temperature sensing technology more accurate and suitable for various application environments is required, such as thermal resistance, thermoelectric, semiconductor, optical, etc. sensing methods, wherein the thermal resistance, thermoelectric, semiconductor methods usually use different materials to generate changes of resistance, current, and carrier concentration for the environmental temperature change, and convert the changes into electrical energy signals, and the temperature change can be known from the output signals. However, the environment has high voltage, high electric field and high magnetic field, which greatly interfere with the measurement, and the safety of the measurement personnel is considered, so that the optical non-contact temperature measurement method is required. The optical temperature measurement utilizes the infrared energy in the absorbed temperature to convert the thermal radiation energy into heat energy, and then the heat energy is converted into an electronic signal by a sensor. Therefore, when the sensor absorbs infrared energy, the output signal is changed to obtain the variation of temperature. The conventional method is to use a thermopile light detector to receive infrared energy, which is an optical temperature sensor. The conventional method can not meet the modern requirements of lower response time and lower signal-to-noise ratio because the sensitivity of the thermopile photodetector to receive infrared rays is not high enough. Therefore, the present technology provides a new temperature sensing device with lower response time and lower signal-to-noise ratio.
How to solve the above problems is the problem that the related business must think about.
Disclosure of Invention
In view of the above problems, the present invention provides an infrared temperature detecting device and a method for measuring temperature.
Wherein the infrared temperature detecting element comprises
The surface of the semiconductor is provided with at least one inverted pyramid structure;
a metal electrode arranged on the surface of the inverted pyramid structure,
a flat ohmic contact electrode disposed on the back surface of the semiconductor,
the carriers in the metal electrode are excited by incident photons to form electron hole pairs or hot carriers, the electron hole pairs or the hot carriers cross the Schottky barrier of the metal electrode and the semiconductor interface to form photocurrent signals, and the temperature value of the object to be measured is calculated according to the photocurrent signals.
Further, the metal electrode and the surface of the inverted pyramid structure form Schottky contact.
Further, the ohmic contact electrode forms ohmic contact with the back surface of the semiconductor.
Further, the inverted pyramid structure has an array structure which is periodically arranged.
Further, the semiconductor includes one of a silicon semiconductor, a P-type semiconductor, and an N-type doped semiconductor.
Further, the metal electrode comprises silver or gold or a material capable of forming Schottky contact with the surface of the inverted pyramid structure.
Further, the ohmic contact electrode includes silver or gold or a material in which copper can form ohmic contact with the semiconductor.
Further, the inverted pyramid structure is used for collecting heat radiation and gathering light energy.
Further, the metal electrode is used to collect photocurrent.
The invention also provides a method for measuring the temperature of the infrared temperature detecting element, which comprises the following steps that a metal electrode forms Schottky contact with the surface of the inverted pyramid structure, carriers in the metal electrode form electron hole pairs or hot carriers after being excited by incident photons, a flat ohmic contact electrode forms ohmic contact with the back surface of the semiconductor, the electron hole pairs or the hot carriers are formed after being excited by the carriers in the metal electrode and cross the Schottky barrier of the interface of the metal electrode and the semiconductor to form photocurrent, and the temperature value of a measured object is calculated according to the photocurrent signal.
Further, the temperature value of the object to be measured is sensed in a range from-40 ℃ to 100 ℃.
Further, the incident photon wavelength ranges from 1000nm to 15 μm.
In summary, the infrared temperature detecting device according to the embodiments of the invention uses a silicon photonic device with a metal-semiconductor interface, and uses the silicon photonic device to detect infrared light for temperature sensing. The silicon photonic device should be able to exhibit, so as to increase the photocurrent generated by the silicon photonic device with respect to the thermal radiation energy (infrared light), and the increased photocurrent can reduce the influence of noise on the subsequent conversion into electronic signals, thereby greatly increasing the temperature accuracy.
Drawings
FIG. 1 is a perspective view of the infrared temperature detecting device according to the present invention.
FIG. 2 is a schematic view of the cross-sectional line A-A of FIG. 1.
Fig. 3 is a schematic top view of fig. 1.
FIG. 4 is a perspective view of an infrared temperature detecting device according to the present invention.
FIG. 5 is a schematic view of the cross-sectional line B-B structure of FIG. 4.
Description of reference numerals: the detection device comprises a detection device body 1, a semiconductor 10, an inverted pyramid structure 100, a back surface 102, a metal electrode 12 and an ohmic contact electrode 14.
Detailed Description
To explain technical contents, structural features, and objects and effects of the technical solutions in detail, the following detailed description is given with reference to the accompanying drawings in conjunction with the embodiments.
The first embodiment is as follows:
referring to fig. 1, 2 and 3, the present invention is an infrared temperature detecting device, the detecting device body 1 includes a semiconductor 10, the surface of the semiconductor 10 is provided with a plurality of inverted pyramid structures 100 uniformly arranged, the inverted pyramid structures 100 are used for collecting heat radiation and gathering light energy, a metal electrode 12, for collecting photocurrent, is disposed on the surface of the inverted pyramid structure 100, forms a schottky contact with the surface of the inverted pyramid structure 100, a flat ohmic contact electrode 14, the ohmic contact electrode 14 is disposed on the back surface of the semiconductor 10, the carriers in the metal electrode 12 are excited by incident photons to form electron hole pairs or hot carriers, the electron hole pairs or hot carriers cross the schottky barrier at the interface between the metal electrode 12 and the semiconductor 10 to form a photocurrent signal, and the temperature value of the object to be measured is calculated according to the photocurrent signal.
In the above, the semiconductor 10 includes one of a silicon semiconductor, a P-type semiconductor, and an N-type doped semiconductor. The metal electrode 12 comprises silver or gold or copper material capable of forming schottky contact with the surface of the inverted pyramid structure. The ohmic contact electrode 14 comprises silver or gold or copper in a material that can form an ohmic contact with the semiconductor.
The invention also discloses a method for measuring the temperature of the infrared temperature detecting element, which comprises the following steps that a metal electrode 12 is in Schottky contact with the surface of the inverted pyramid structure 100, carriers in the metal electrode 12 form electron hole pairs or hot carriers after being excited by incident photons, a flat ohmic contact electrode 14 is in ohmic contact with the back surface 102 of the semiconductor 10, the electron hole pairs or the hot carriers are formed after being excited by the carriers in the metal electrode 12 and cross the Schottky barrier of the interface of the metal electrode 12 and the semiconductor 10 to form photocurrent, and the temperature value of a measured object is calculated according to the photocurrent signal.
In the above, the wavelength of incident photons ranges from 1000nm to 15 μm, and the temperature value of the object is sensed in a range from-40 ℃ to 100 DEG C
The present invention provides an inverted pyramid structure 100 with a periodically arranged array structure, wherein the inverted pyramid structure 100 is a three-dimensional inverted pyramid microarray nano structure (IPAN). The semiconductor 10 is a p-type double-sided polished silicon wafer, and has a resistivity of 5-10 omega-cm and a thickness of 380-420 micrometers.
The above-described method for manufacturing the semiconductor 10 includes the steps of,
1) cutting the silicon wafer into a silicon substrate by using a diamond pen;
2) sequentially cleaning the silicon substrate with acetone (acetone), Isopropanol (IPA), deionized water (DI-water) and Methanol (Methanol);
3) washing the silicon substrate with ultrasonic vibration washer for 15 min to eliminate organic matter and fine grains;
4) the silicon substrate was sequentially washed with piranha solution, hydrofluoric acid solution, and deionized water and dried with a nitrogen gun. A three-dimensional Inverted Pyramidal Array Nanostructure (IPAN) as shown in FIG. 2 can be obtained.
In fig. 2, H is the cavity height of the inverted pyramid, and l (H) is the cavity wall line length of the inverted pyramid. As the height H increases, the cavity wall line length l (H) also increases. Although the periodic array metal microstructure is a fixed period, each metal structure unit has a metal cavity wall with a gradually changed line length.
In the above, when infrared light enters the inverted pyramid structure 100, Local Surface Plasma Resonance (LSPR) is induced, and for different wavelengths, energy is limited to different positions of the inverted pyramid structure 100, and at this time, a strong near-field electric field excites a large number of hot carriers, and after the carriers in the metal electrode 12 are excited, electron hole pairs or hot carriers are formed to cross the schottky barrier at the interface between the metal electrode 12 and the semiconductor 10, and a photocurrent is formed, so that the infrared temperature detecting element 1 can collect infrared energy radiated by an object to be measured, convert the energy into a current signal, and calculate a temperature value of the object to be measured according to the current signal.
Example two:
referring to fig. 4 and 5, the present invention is an infrared temperature detecting device, the detecting device body 1 includes a semiconductor 10, the surface of the semiconductor 10 is provided with an inverted pyramid structure 100, the inverted pyramid structure 100 for collecting thermal radiation, concentrating light energy, a metal electrode 12, for collecting photocurrent, is disposed on the surface of the inverted pyramid structure 100, forms a schottky contact with the surface of the inverted pyramid structure 100, a flat ohmic contact electrode 14, the ohmic contact electrode 14 is disposed on the back surface of the semiconductor 10, the carriers in the metal electrode 12 are excited by incident photons to form electron hole pairs or hot carriers, the electron hole pairs or hot carriers cross the schottky barrier at the interface between the metal electrode 12 and the semiconductor 10 to form a photocurrent signal, and the temperature value of the object to be measured is calculated according to the photocurrent signal.
In the above, the semiconductor 10 includes one of a silicon semiconductor, a P-type semiconductor, and an N-type doped semiconductor. The metal electrode 12 comprises silver or gold or copper material capable of forming schottky contact with the surface of the inverted pyramid structure. The ohmic contact electrode 14 comprises silver or gold or copper in a material that can form an ohmic contact with the semiconductor.
The invention also discloses a method for measuring the temperature of the infrared temperature detecting element, which comprises the following steps that a metal electrode 12 is in Schottky contact with the surface of the inverted pyramid structure 100, carriers in the metal electrode 12 form electron hole pairs or hot carriers after being excited by incident photons, a flat ohmic contact electrode 14 is in ohmic contact with the back surface 102 of the semiconductor 10, the electron hole pairs or the hot carriers are formed after being excited by the carriers in the metal electrode 12 and cross the Schottky barrier of the interface of the metal electrode 12 and the semiconductor 10 to form photocurrent, and the temperature value of a measured object is calculated according to the photocurrent signal.
In the above, the wavelength of incident photons ranges from 1000nm to 15 μm, and the temperature value of the object is sensed in a range from-40 ℃ to 100 DEG C
The present invention comprises an inverted pyramid structure 100. the inverted pyramid structure 100 is a three-dimensional inverted pyramid microarray nano-structure (3D inverted pyramid array nano-structure: IPAN). The semiconductor 10 is a p-type double-sided polished silicon wafer, and has a resistivity of 5-10 omega-cm and a thickness of 380-420 micrometers.
The above-described method for manufacturing the semiconductor 10 includes the steps of,
1) cutting the silicon wafer into a silicon substrate by using a diamond pen;
2) sequentially cleaning the silicon substrate with acetone (acetone), Isopropanol (IPA), deionized water (DI-water) and Methanol (Methanol);
3) washing the silicon substrate with ultrasonic vibration washer for 15 min to eliminate organic matter and fine grains;
4) the silicon substrate was sequentially washed with piranha solution, hydrofluoric acid solution, and deionized water and dried with a nitrogen gun. A three-dimensional Inverted Pyramidal Array Nanostructure (IPAN) as shown in FIG. 5 can be obtained.
In fig. 5, H is the inverted pyramid cavity height, and l (H) is the inverted pyramid cavity wall line length. As the height H increases, the cavity wall line length l (H) also increases. Although the periodic array metal microstructure is a fixed period, each metal structure unit has a metal cavity wall with a gradually changed line length.
In the above, when infrared light enters the inverted pyramid structure 100, Local Surface Plasma Resonance (LSPR) is induced, and for different wavelengths, energy is limited to different positions of the inverted pyramid structure 100, and at this time, a strong near-field electric field excites a large number of hot carriers, and after the carriers in the metal electrode 12 are excited, electron hole pairs or hot carriers are formed to cross the schottky barrier at the interface between the metal electrode 12 and the semiconductor 10, and a photocurrent is formed, so that the infrared temperature detecting element 1 can collect infrared energy radiated by an object to be measured, convert the energy into a current signal, and calculate a temperature value of the object to be measured according to the current signal.
In the comparative example, the content of the organic solvent,
referring to the descriptions of the first embodiment and the second embodiment, the difference between the first embodiment and the second embodiment is that the metal microstructure with the inverted pyramid structure 100 in the periodic array has metal cavity walls with gradually changed line lengths in each metal structural unit. According to the actual light irradiation range requirement, the single inverted pyramid structure 100 in the second embodiment can be applied when the irradiation area is small, whereas a plurality of inverted pyramid structures 100 can be applied for a large irradiation area.
In the embodiments, the silicon photonic device utilizes the metal-semiconductor interface, and the detection of infrared light by the silicon photonic device is applied to temperature sensing. The silicon photonic device should be able to exhibit, so as to increase the photocurrent generated by the silicon photonic device with respect to the thermal radiation energy (infrared light), and the increased photocurrent can reduce the influence of noise on the subsequent conversion into electronic signals, thereby greatly increasing the temperature accuracy.
It should be noted that, although the above embodiments have been described herein, the invention is not limited thereto. Therefore, based on the innovative concepts of the present invention, the technical solutions of the present invention can be directly or indirectly applied to other related technical fields by making changes and modifications to the embodiments described herein, or by using equivalent structures or equivalent processes performed in the content of the present specification and the attached drawings, which are included in the scope of the present patent.
Claims (12)
1. An infrared temperature detecting element is characterized by comprising
The surface of the semiconductor is provided with at least one inverted pyramid structure;
a metal electrode arranged on the surface of the inverted pyramid structure,
a flat ohmic contact electrode disposed on the back surface of the semiconductor,
the carriers in the metal electrode are excited by incident photons to form electron hole pairs or hot carriers, the electron hole pairs or the hot carriers cross the Schottky barrier of the metal electrode and the semiconductor interface to form photocurrent signals, and the temperature value of the object to be measured is calculated according to the photocurrent signals.
2. The infrared temperature detecting device as claimed in claim 1, wherein the metal electrode is in Schottky contact with the surface of the inverted pyramid structure.
3. The infrared temperature detecting device as set forth in claim 1, wherein the ohmic contact electrode is in ohmic contact with a back surface of the semiconductor.
4. The infrared temperature detecting device as claimed in claim 1, wherein the inverted pyramid structure has a periodically arranged array structure.
5. The infrared temperature detection device as claimed in claim 1, wherein the semiconductor comprises one of a silicon semiconductor, a P-type semiconductor and an N-type doped semiconductor.
6. The infrared temperature detection device as claimed in claim 1, wherein the metal electrode comprises Ag or Au or Cu material capable of forming a Schottky contact with the surface of the inverted pyramid structure.
7. The infrared temperature detecting device as set forth in claim 1, wherein the ohmic contact electrode comprises Ag or Au or Cu material capable of forming ohmic contact with the semiconductor.
8. The infrared temperature detecting device as claimed in claim 1, 2 or 4, wherein the inverted pyramid structure is used to collect heat radiation and collect light energy.
9. The infrared temperature detecting element as claimed in claim 1, 2 or 7, wherein the metal electrode is used for collecting photocurrent.
10. A method for measuring temperature by an infrared temperature detecting element is characterized in that: the method comprises the following steps that a metal electrode forms Schottky contact with the surface of the inverted pyramid structure, carriers in the metal electrode form electron hole pairs or hot carriers after being excited by incident photons, a flat ohmic contact electrode forms ohmic contact with the back surface of a semiconductor, the electron hole pairs or the hot carriers are formed after being excited by the carriers in the metal electrode and cross the Schottky barrier of the interface of the metal electrode and the semiconductor to form photocurrent, and the temperature value of a measured object is calculated according to the photocurrent signal.
11. The method as claimed in claim 1, wherein the temperature of the object is sensed from-40 ℃ to 100 ℃.
12. The method as claimed in claim 1, wherein the incident photons have a wavelength ranging from 1000nm to 15 μm.
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| JP2021072310A (en) * | 2019-10-29 | 2021-05-06 | 國立台灣大學 | Photodetector |
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| JP2021072310A (en) * | 2019-10-29 | 2021-05-06 | 國立台灣大學 | Photodetector |
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