CN110431488B - 用于光掩模及光罩检验以及晶片印刷检查验证的多列间隔 - Google Patents

用于光掩模及光罩检验以及晶片印刷检查验证的多列间隔 Download PDF

Info

Publication number
CN110431488B
CN110431488B CN201880017435.3A CN201880017435A CN110431488B CN 110431488 B CN110431488 B CN 110431488B CN 201880017435 A CN201880017435 A CN 201880017435A CN 110431488 B CN110431488 B CN 110431488B
Authority
CN
China
Prior art keywords
electron
inspection
optical columns
electron optical
column
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201880017435.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN110431488A (zh
Inventor
R·海恩斯
F·基莱塞
M·普里尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Tencor Corp filed Critical KLA Tencor Corp
Publication of CN110431488A publication Critical patent/CN110431488A/zh
Application granted granted Critical
Publication of CN110431488B publication Critical patent/CN110431488B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G03F9/7053—Non-optical, e.g. mechanical, capacitive, using an electron beam, acoustic or thermal waves
    • G03F9/7061—Scanning probe microscopy, e.g. AFM, scanning tunneling microscopy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G03F1/86—Inspecting by charged particle beam [CPB]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70655—Non-optical, e.g. atomic force microscope [AFM] or critical dimension scanning electron microscope [CD-SEM]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24475—Scattered electron detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2448—Secondary particle detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2814—Measurement of surface topography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration
    • H01J2237/30438—Registration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
CN201880017435.3A 2017-02-05 2018-02-03 用于光掩模及光罩检验以及晶片印刷检查验证的多列间隔 Active CN110431488B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762454807P 2017-02-05 2017-02-05
US62/454,807 2017-02-05
US15/879,120 2018-01-24
US15/879,120 US10777377B2 (en) 2017-02-05 2018-01-24 Multi-column spacing for photomask and reticle inspection and wafer print check verification
PCT/US2018/016761 WO2018144959A1 (en) 2017-02-05 2018-02-03 Multi-column spacing for photomask and reticle inspection and wafer print check verification

Publications (2)

Publication Number Publication Date
CN110431488A CN110431488A (zh) 2019-11-08
CN110431488B true CN110431488B (zh) 2022-01-28

Family

ID=63041130

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880017435.3A Active CN110431488B (zh) 2017-02-05 2018-02-03 用于光掩模及光罩检验以及晶片印刷检查验证的多列间隔

Country Status (8)

Country Link
US (1) US10777377B2 (https=)
JP (1) JP6971322B2 (https=)
KR (1) KR102272445B1 (https=)
CN (1) CN110431488B (https=)
DE (1) DE112018000672T5 (https=)
IL (1) IL268436B2 (https=)
TW (1) TWI746788B (https=)
WO (1) WO2018144959A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7126355B2 (ja) * 2018-02-21 2022-08-26 株式会社ニューフレアテクノロジー 荷電粒子ビーム検査方法
DE102020103339A1 (de) * 2020-02-10 2021-08-12 Carl Zeiss Microscopy Gmbh Verfahren zum Betrieb eines Teilchenstrahlgeräts, Computerprogrammprodukt und Teilchenstrahlgerät zur Durchführung des Verfahrens
JP7477364B2 (ja) * 2020-05-19 2024-05-01 株式会社ホロン マルチビーム画像生成装置およびマルチビーム画像生成方法
US11899375B2 (en) 2020-11-20 2024-02-13 Kla Corporation Massive overlay metrology sampling with multiple measurement columns

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1579003A (zh) * 2001-11-02 2005-02-09 株式会社荏原制作所 具有内置检测装置的半导体制造装置和使用该制造装置的器件制造方法
US6977375B2 (en) * 2000-02-19 2005-12-20 Multibeam Systems, Inc. Multi-beam multi-column electron beam inspection system
CN103703536A (zh) * 2011-06-29 2014-04-02 科磊股份有限公司 多柱电子束设备和方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5384463A (en) * 1991-06-10 1995-01-24 Fujisu Limited Pattern inspection apparatus and electron beam apparatus
JPH10134757A (ja) * 1996-10-31 1998-05-22 Nikon Corp マルチビーム検査装置
JP3661592B2 (ja) * 1998-03-27 2005-06-15 株式会社日立製作所 パターン検査装置
WO2001039243A1 (en) 1999-11-23 2001-05-31 Ion Diagnostics, Inc. Electron optics for multi-beam electron beam lithography tool
EP1339100A1 (en) * 2000-12-01 2003-08-27 Ebara Corporation Inspection method and apparatus using electron beam, and device production method using it
US9390886B2 (en) * 2005-02-17 2016-07-12 Ebara Corporation Electro-optical inspection apparatus using electron beam
US9153413B2 (en) 2007-02-22 2015-10-06 Applied Materials Israel, Ltd. Multi-beam scanning electron beam device and methods of using the same
EP2122655A2 (en) * 2007-02-22 2009-11-25 Applied Materials Israel Ltd. High throughput sem tool
JP2013125652A (ja) * 2011-12-14 2013-06-24 Samsung Yokohama Research Institute Co Ltd 電子線装置
JP2013128069A (ja) * 2011-12-19 2013-06-27 Hitachi High-Technologies Corp 電子線検査装置、及び検査方法
US8806392B2 (en) * 2012-12-03 2014-08-12 Taiwan Semiconductor Manufacturing Company, Ltd. Distinguishable IC patterns with encoded information
JP6090690B2 (ja) * 2012-12-04 2017-03-08 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 電子線装置
US9040910B2 (en) * 2013-05-23 2015-05-26 Tao Luo Multi-column electron beam inspection that uses custom printing methods
TWI658543B (zh) * 2013-12-05 2019-05-01 Stats Chippac, Ltd. 在半導體封裝中使用標準化載體的半導體裝置及方法
JP6677657B2 (ja) * 2015-02-05 2020-04-08 株式会社荏原製作所 検査装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6977375B2 (en) * 2000-02-19 2005-12-20 Multibeam Systems, Inc. Multi-beam multi-column electron beam inspection system
CN1579003A (zh) * 2001-11-02 2005-02-09 株式会社荏原制作所 具有内置检测装置的半导体制造装置和使用该制造装置的器件制造方法
CN103703536A (zh) * 2011-06-29 2014-04-02 科磊股份有限公司 多柱电子束设备和方法

Also Published As

Publication number Publication date
WO2018144959A1 (en) 2018-08-09
US10777377B2 (en) 2020-09-15
JP2020514996A (ja) 2020-05-21
DE112018000672T5 (de) 2019-12-12
TW201835678A (zh) 2018-10-01
IL268436B2 (en) 2023-09-01
KR102272445B1 (ko) 2021-07-01
US20180233318A1 (en) 2018-08-16
KR20190107148A (ko) 2019-09-18
IL268436B1 (en) 2023-05-01
TWI746788B (zh) 2021-11-21
IL268436A (en) 2019-09-26
CN110431488A (zh) 2019-11-08
JP6971322B2 (ja) 2021-11-24

Similar Documents

Publication Publication Date Title
CN110431488B (zh) 用于光掩模及光罩检验以及晶片印刷检查验证的多列间隔
JP2022008510A (ja) メトロロジー方法、ターゲット、及び基板
JP2022001965A (ja) リソグラフィプロセスおよびリソグラフィ装置、ならびに検査プロセスおよび検査装置
JP6906050B2 (ja) メトロロジー測定に用いるためのプログラムされた欠陥を生成する方法およびシステム
CN111316413A (zh) 用于对准半导体装置参考图像及测试图像的系统及方法
US9406573B2 (en) Exposure mask fabrication method, exposure mask fabrication system, and semiconductor device fabrication method
CN102566301A (zh) 测量方法、设备和衬底
JPWO2011155122A1 (ja) 回路パターン検査装置およびその検査方法
JP6951495B2 (ja) メトロロジー方法、ターゲット、及び基板
JP2015510149A (ja) レチクルの時間変化強度マップの生成
JP2019020719A (ja) Ｏｐｃ方法、及びそのｏｐｃ方法を利用したマスク製造方法
WO2018148150A1 (en) Electron source architecture for a scanning electron microscopy system
JP2013128069A (ja) 電子線検査装置、及び検査方法
CN1947149A (zh) 校准系统及其校准方法
KR102443351B1 (ko) 프로세스 유도 편위 특성 묘사
KR20200041373A (ko) 방사선 빔의 정렬 특성을 결정하기 위한 방법 및 장치
US20240079206A1 (en) Scanning electron microscope (sem) measurement method and apparatus
US20200402863A1 (en) Methods and systems for defining a process window
CN105992997A (zh) 图案描画装置用的gui装置、图案描画系统、作业单更新方法以及程序
JP4857963B2 (ja) パターン抽出方法，パターン抽出装置および半導体装置の製造方法
JP2008233355A (ja) フォトマスクの製造方法
JP2007033902A (ja) パターン検査装置、パターン検査方法、及び被検査物
JP2015002114A (ja) 検査装置および検査方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant