CN110421773A - A kind of foam process of thermoelectric semiconductor filling mold - Google Patents
A kind of foam process of thermoelectric semiconductor filling mold Download PDFInfo
- Publication number
- CN110421773A CN110421773A CN201910844927.6A CN201910844927A CN110421773A CN 110421773 A CN110421773 A CN 110421773A CN 201910844927 A CN201910844927 A CN 201910844927A CN 110421773 A CN110421773 A CN 110421773A
- Authority
- CN
- China
- Prior art keywords
- thermoelectric semiconductor
- filling
- semiconductor
- thermoelectric
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C44/00—Shaping by internal pressure generated in the material, e.g. swelling or foaming ; Producing porous or cellular expanded plastics articles
- B29C44/02—Shaping by internal pressure generated in the material, e.g. swelling or foaming ; Producing porous or cellular expanded plastics articles for articles of definite length, i.e. discrete articles
- B29C44/12—Incorporating or moulding on preformed parts, e.g. inserts or reinforcements
Landscapes
- Casting Or Compression Moulding Of Plastics Or The Like (AREA)
- Polyurethanes Or Polyureas (AREA)
- Refrigerator Housings (AREA)
- Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
Abstract
The present invention discloses a kind of foam process of thermoelectric semiconductor filling mold, thermoelectric semiconductor includes ceramic wafer, P-type semiconductor, N-type semiconductor, flow deflector, p-type and N-type semiconductor arrange between two ceramic wafers, filling mold includes upper mold, lower die, left and right sides positioning plate, lower die setting positioning groove and filling rifle are inserted into hole, the seamed edge relative level line of thermoelectric semiconductor is placed on lower die positioning groove in 45 °, upper mold setting gas vent is taken over self-styled technique is vacuumized, modified polyurethane foamed material is filled into die cavity through filling rifle insertion hole, thermoelectric semiconductor is set to fill modified polyurethane foamed material in the gap in two ceramic wafers；Filling process carries out vacuum pumping to the die cavity of thermoelectric semiconductor filling mold, make to keep preset negative pressure inside entire type chamber, polyurethane foams is enabled to form cavity of resorption push-in, the force field that microchannel squeezes out, epicoele is drawn sunset before foaming, to complete foaming process.The present invention increases substantially the performance of thermoelectric semiconductor.
Description
Technical field:
The present invention relates to thermoelectric semiconductor performance improvement technical fields, are to be related to a kind of thermoelectric semiconductor more specifically
Fill the foam process of mold.
Background technique:
With the rapid development of economy, the electric appliances such as refrigerator are more more and more universal, the consumption of energy consumption is also more and more, and China is one
How a energy consumption big country reduces energy consumption, realizes sustainable development, and get along with the friendly harmonious of environment, becomes
One of the hot issue of many scholar's researchs of today's society.Semiconductor refrigerating is winged at this as a kind of novel refrigeration modes
Speed development is one in the society that people's living standard increasingly improves and requirement of the people for life comfort level is higher and higher
A refrigeration modes with good development prospect.
Semiconductor refrigerating is electric current transducing type refrigeration modes, also known as thermoelectric cooling, can be freezed, and can be heated, by right
Input current controls the high-precision control, it can be achieved that temperature, and process of refrigerastion does not need any refrigerant, without rotating part
Part, it is noiseless, it is without friction.The key that semiconductor refrigerating is realized is semiconductor chilling plate.Current semiconductor chilling plate is to utilize
Extraordinary semiconductor material constitutes P-N junction, and the gap that N-type semiconductor and P semiconductor arrange is air, will lead to so 1. empty
Gas convection phenomena causes cold and hot end short-circuit, seriously affects refrigeration performance；2. wet air causes dielectric strength to decline, climb
Electrical distance is unqualified；3. the aging of accelerated semiconductor.
It includes semiconductor chilling plate that Chinese patent CN201420306709.X, which discloses a kind of semiconductor cooling device, by
Upper substrate and lower substrate, and multiple groups P-N junction semiconductor group between upper substrate and lower substrate is at the upper substrate is under
The gap of substrate is filled with the aerogel layer with partiting thermal insulation effect, and the refrigerating efficiency under power consumption is made to improve 10% or more.
But according to general common sense, earth silicon material is filled, heat-insulating property can all decline, and weaken the refrigeration of cooling piece instead
Performance.
Summary of the invention:
The technical problems to be solved by the present invention are: a kind of foam process of thermoelectric semiconductor filling mold is provided, thus
The refrigeration performance of thermoelectric semiconductor is improved, with overcome the deficiencies in the prior art.
To achieve the above object, the technical solution adopted by the present invention is that: a kind of foaming work of thermoelectric semiconductor filling mold
Skill, the thermoelectric semiconductor include ceramic wafer, P-type semiconductor, N-type semiconductor, flow deflector, and the p-type and N-type semiconductor are two
It is arranged between ceramic wafer, it is characterised in that: filling mold includes upper die and lower die, left and right sides positioning plate, the lower die setting positioning slope
Mouth and filling rifle are inserted into hole, and the seamed edge relative level line of the thermoelectric semiconductor is placed on lower die in 45 ° and positions on groove, upper mold
Setting gas vent is taken over self-styled technique is vacuumized, and modified polyurethane foamed material is filled into die cavity through filling rifle insertion hole,
Thermoelectric semiconductor is set to fill modified polyurethane foamed material in the gap in two ceramic wafers；Filling process fills thermoelectric semiconductor
The die cavity of injection molding tool carries out vacuum pumping, makes to keep preset negative pressure inside entire type chamber, order is being sent out to polyurethane foams
The bubble eve forms cavity of resorption push-in, microchannel squeezes out, the force field of epicoele traction, to complete foaming process.
The upper and lower mould setting positioning agrees with, and forms double terraced slot bridge-type water conservancy diversion and quickly fill chamber.
Dovetail groove is set in the upper and lower mould, gasket is set between thermoelectric semiconductor and positioning groove.
Several thermoelectric semiconductors are arranged in die cavity internal frame idle discharge, screening glass, the heat of two sides are set between adjacent thermoelectric semiconductor
Neonychium is set between electric semiconductor and side positioning plate.
Filling rifle insertion hole has both sealing function, is sealed after the completion of filling by stud, described to vacuumize self-styled work
Skill adapter tube is self-sealing mechanism, guarantees to form preset positive pressure and temperature after the completion of foaming, completes foaming chemical reaction and reach institute
Need optimum density and minimum thermal conductivity.
For the modified polyurethane of above-mentioned thermoelectric semiconductor filling, formula composition score by weight is as follows: polyether polyols
Alcohol 20, azodicarbonamide 1, polyester polyol 40, foam stabiliser 4, a fluorine dichloroethanes 20, diphenylmethane diisocyanate
Ester 200, pungent/decyl tertiary amine 2, three n-hexylamines 1；The modified polyurethane is filled for thermoelectric semiconductor internal pore.
The beneficial effects of the present invention are: the present invention fills technology by water conservancy diversion, pushing, negative pressure, uses thermal conductivity ratio
Air is low, the very high polyurethane foam material of dielectric strength is filled to foaming in the microchannel of thermoelectric semiconductor, foaming
Forming process switchs to positive seal and temperature control, so that the performance of thermoelectric semiconductor is increased substantially, refrigerator after vanning
Power consumption reduces, cabinet mean temperature significantly reduces, and reliability increases substantially.
Due to using modified formula, so that polyurethane foams is had low viscosity and high fluidity, ensure that filling
Validity.
At home and abroad thermoelectric semiconductor field belongs to pioneering technology to the present invention.
Detailed description of the invention:
Fig. 1 is thermoelectric semiconductor filling mold structure diagram of the invention.
Fig. 2 is the side view of Fig. 1.
Fig. 3 is thermoelectric semiconductor filling mold foam chamber topology layout figure of the invention.
Specific embodiment:
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached
The embodiment of figure description is exemplary, and for explaining only the invention, and is not considered as limiting the invention.
In the description of the present invention, it is to be understood that, term " front and back ", "upper", "lower", "left", "right", " vertical ",
The orientation or positional relationship of the instructions such as "horizontal", "inner", "outside" be based on the orientation or positional relationship shown in the drawings, merely to
Convenient for description the present invention and simplify description, rather than the device or element of indication or suggestion meaning must have a particular orientation,
It is constructed and operated in a specific orientation, therefore is not considered as limiting the invention.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " should broadly understood, for example, it may be being fixedly connected.It may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected；It can be directly connected, can also can be indirectly connected through an intermediary
Connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood at this with concrete condition
The concrete meaning of invention.
Fig. 1-3 is please referred to, thermoelectric semiconductor filling mold is divided into upper mold 1 and lower die 2, and the thermoelectric semiconductor 7 includes pottery
Porcelain plate, P-type semiconductor, N-type semiconductor, flow deflector, the p-type and N-type semiconductor arrange between two ceramic wafers, fill mold packet
Upper mold 1, lower die 2, left and right sides positioning plate 5 are included, the lower die setting positioning groove 4 and filling rifle are inserted into hole 3, and the thermoelectricity is partly led
45 ° of body are placed on lower die positioning groove, and gas vent and evacuation process adapter tube is arranged in upper mold, are inserted into hole to die cavity through filling rifle
Interior filling modified polyurethane foamed material.Upper and lower mould is terraced slot open type design, and processing technology is simple, easily reaches design requirement,
Processing cost is low, processing approach multiplicity, can be machining with punching press or machine.Molding is waist-drum-shaped up and down, molds and divides mould simple
It is single reliable, it can be with self-correcting positive alignment.Upper mold design has gas vent and evacuation process adapter tube, and wherein evacuation process takes over one end
With die body welding, the other end and maintenance needle-valve welding, conveniently it is controlled to a vacuum pump.Lower die is equipped with filling rifle and is inserted into hole, simultaneously should
Being inserted into hole is sealing screw hole, can be sealed with sealing bolt after the completion of filling.
45 ° of thermoelectric semiconductor prepared are placed on lower die positioning groove, is used between thermoelectric semiconductor and groove
Rubber seal (rubber pad is Nian Jie one with groove), forms lower bridge arm.Thermoelectric module is aerial to be deposited in lower die dovetail groove
It is interior, M type chamber is formed, has gummed paper 8 to protect ceramic surface for seal box between cooling piece and piece, the thermoelectric module at both ends is with before
It is stamped the sealing of rubber 9 in rear end (rubber seal and front and rear cover are bonded as one).Lower bridge wall forms close with lower die and front and rear cover
The M type of envelope injects chamber, and filling agent is forced through the microchannel by thermoelectric module.
After upper mold and lower die molding, bridge arm in formation, and complete water conservancy diversion bridge is constituted with lower bridge wall.Upper impression is W water conservancy diversion
Chamber, the groove with upper mold are also sealing, and filling agent is flowed out by upper bridge arm.
Vacuum pumping is carried out before filling, forms negative pressure inside entire type chamber, is enabled to polyurethane foams before foaming
Cavity of resorption push-in, the force field that microchannel squeezes out, epicoele is drawn are formed sunset, to complete foaming process.Filling aperture has both sealing function
Can, sealed after the completion of filling by stud, technique adapter tube be self-sealing mechanism, guarantee foaming after the completion of formed preset positive pressure and
Temperature completes foaming chemical reaction and reaches required optimum density and minimum thermal conductivity.
As shown in table 1, become low viscosity height stream in addition modified material for main polyurethane foams composition and ratio
The modified polyurethane foaming agent of dynamic property, expansion density improves, adhesive strength improves, and thermal coefficient is reduced to the 1/2 of air, absolutely
Edge intensity reaches factory regulation.Processing conditions: formula is mixed by mass fraction, at 25 degrees c, stirs 10 seconds, injects mold
It is interior, it foams 10 minutes at 25 degrees c, obtains performance are as follows: foam density 0.034g/cm3, thermal conductivity 0.015W/ (mK), bonding
Intensity 400MPa.
1 low-viscosity high-fluidity polyurethane foams of table, viscosity (25 DEG C): 50CPS
The invention is not limited to above embodiment, if not departing from the present invention to various changes or deformation of the invention
Spirit and scope, if these changes and deformation belong within the scope of claim and equivalent technologies of the invention, then this hair
It is bright to be also intended to encompass these changes and deformation.
Claims (5)
1. a kind of foam process of thermoelectric semiconductor filling mold, the thermoelectric semiconductor includes ceramic wafer, P-type semiconductor, N-type
Semiconductor, flow deflector, the p-type and N-type semiconductor arrange between two ceramic wafers, it is characterised in that: filling mold include upper mold,
Lower die, left and right sides positioning plate, the lower die setting positioning groove and filling rifle are inserted into hole, and the seamed edge of the thermoelectric semiconductor is opposite
Horizontal line is placed on lower die positioning groove in 45 °, and upper mold setting gas vent is taken over self-styled technique is vacuumized, and is inserted through filling rifle
Enter hole and fill modified polyurethane foamed material into die cavity, fills thermoelectric semiconductor in the gap in two ceramic wafers modified poly-
Urethane foamed material；Filling process carries out vacuum pumping to the die cavity of thermoelectric semiconductor filling mold, makes inside entire type chamber
Preset negative pressure is kept, enables to polyurethane foams and forms cavity of resorption push-in sunset before foaming, microchannel squeezes out, the gesture of epicoele traction
The field of force, to complete foaming process.
2. the foam process of thermoelectric semiconductor filling mold according to claim 1, it is characterised in that: the upper and lower mould setting
Positioning agrees with, and forms double terraced slot bridge-type water conservancy diversion and quickly fill chamber.
3. the foam process of thermoelectric semiconductor filling mold according to claim 2, it is characterised in that: in the upper and lower mould
Dovetail groove is set, gasket is set between thermoelectric semiconductor and positioning groove.
4. the foam process of thermoelectric semiconductor filling mold according to claim 3, it is characterised in that: in die cavity internal frame idle discharge
Several thermoelectric semiconductors are arranged, screening glass is set between adjacent thermoelectric semiconductor, between the thermoelectric semiconductor and side positioning plate of two sides
Neonychium is set.
5. the foam process of thermoelectric semiconductor filling mold according to claim 1, it is characterised in that: the filling rifle insertion
Hole has both sealing function, is sealed after the completion of filling by stud, and the self-styled technique adapter tube that vacuumizes is self-sealing mechanism, guarantees
Preset positive pressure and temperature are formed after the completion of foaming, are completed foaming chemical reaction and are reached required optimum density and minimum thermal conductivity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910844927.6A CN110421773B (en) | 2017-09-01 | 2017-09-01 | Foaming process of thermoelectric semiconductor filling mold |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710778049.3A CN107738396B (en) | 2017-09-01 | 2017-09-01 | Modified polyurethane for thermoelectric semiconductor filling and the thermoelectric semiconductor using the modified polyurethane fill mold, foam process |
| CN201910844927.6A CN110421773B (en) | 2017-09-01 | 2017-09-01 | Foaming process of thermoelectric semiconductor filling mold |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710778049.3A Division CN107738396B (en) | 2017-09-01 | 2017-09-01 | Modified polyurethane for thermoelectric semiconductor filling and the thermoelectric semiconductor using the modified polyurethane fill mold, foam process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110421773A true CN110421773A (en) | 2019-11-08 |
| CN110421773B CN110421773B (en) | 2021-04-23 |
Family
ID=61235688
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910844927.6A Active CN110421773B (en) | 2017-09-01 | 2017-09-01 | Foaming process of thermoelectric semiconductor filling mold |
| CN201910860652.5A Active CN110435067B (en) | 2017-09-01 | 2017-09-01 | Thermoelectric semiconductor foamed by adopting mold |
| CN201710778049.3A Active CN107738396B (en) | 2017-09-01 | 2017-09-01 | Modified polyurethane for thermoelectric semiconductor filling and the thermoelectric semiconductor using the modified polyurethane fill mold, foam process |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910860652.5A Active CN110435067B (en) | 2017-09-01 | 2017-09-01 | Thermoelectric semiconductor foamed by adopting mold |
| CN201710778049.3A Active CN107738396B (en) | 2017-09-01 | 2017-09-01 | Modified polyurethane for thermoelectric semiconductor filling and the thermoelectric semiconductor using the modified polyurethane fill mold, foam process |
Country Status (1)
| Country | Link |
|---|---|
| CN (3) | CN110421773B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108359070A (en) * | 2018-03-01 | 2018-08-03 | 顺德职业技术学院 | A kind of modified polyurethane foam process for thermoelectric semiconductor filling |
| WO2021007848A1 (en) * | 2019-07-18 | 2021-01-21 | 浙江大学 | Foamed microchannel film with foam pores interconnected with microchannels, and preparation method therefor |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003008087A (en) * | 2001-04-18 | 2003-01-10 | Suzuki Sogyo Co Ltd | Thermoelectric element module and its manufacturing method |
| CN1436117A (en) * | 2000-06-14 | 2003-08-13 | 纳幕尔杜邦公司 | Encapsulation using microcellular foamed materials |
| WO2005114649A3 (en) * | 2004-05-19 | 2006-01-05 | Bed Check Corp | Silk-screen thermocouple |
| CN1750287A (en) * | 2004-09-14 | 2006-03-22 | 杜效中 | Method and device for producing thermoelectric semiconductor device and its products obtained thereof |
| CN101043064A (en) * | 2006-03-24 | 2007-09-26 | 株式会社东芝 | Thermoelectric conversion module and method of manufacturing the same |
| WO2017074003A1 (en) * | 2015-10-27 | 2017-05-04 | 한국과학기술원 | Flexible thermoelectric device and method for preparing same |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56127427A (en) * | 1980-03-11 | 1981-10-06 | Hitachi Chem Co Ltd | Manufacture of fiber-reinforced thermosetting resin molding |
| JP2003258323A (en) * | 2002-03-07 | 2003-09-12 | Citizen Watch Co Ltd | Thermoelectric device |
| CN100463129C (en) * | 2006-02-09 | 2009-02-18 | 夏普株式会社 | Semiconductor device manufacturing method and semiconductor device manufacturing apparatus |
| JP2012209305A (en) * | 2011-03-29 | 2012-10-25 | Toyota Industries Corp | Thermoelectric conversion unit and manufacturing method of the same |
| CN104540865B (en) * | 2012-08-20 | 2017-03-01 | 科思创德国股份有限公司 | Cast polyurethane resin and the potting compound being made from |
| CN104004344B (en) * | 2014-06-09 | 2016-05-18 | 天津信赛科贸有限公司 | A kind of preparation method of waterproof Embedding Material |
| CN105269758B (en) * | 2014-07-15 | 2018-01-02 | 清华大学 | Semiconductor packaging mold, encapsulating structure and method for packing |
| CN104385534B (en) * | 2014-11-18 | 2017-06-16 | 佛山市蓝箭电子股份有限公司 | A kind of plastic-sealing mould structure |
-
2017
- 2017-09-01 CN CN201910844927.6A patent/CN110421773B/en active Active
- 2017-09-01 CN CN201910860652.5A patent/CN110435067B/en active Active
- 2017-09-01 CN CN201710778049.3A patent/CN107738396B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1436117A (en) * | 2000-06-14 | 2003-08-13 | 纳幕尔杜邦公司 | Encapsulation using microcellular foamed materials |
| JP2003008087A (en) * | 2001-04-18 | 2003-01-10 | Suzuki Sogyo Co Ltd | Thermoelectric element module and its manufacturing method |
| WO2005114649A3 (en) * | 2004-05-19 | 2006-01-05 | Bed Check Corp | Silk-screen thermocouple |
| CN1750287A (en) * | 2004-09-14 | 2006-03-22 | 杜效中 | Method and device for producing thermoelectric semiconductor device and its products obtained thereof |
| CN101043064A (en) * | 2006-03-24 | 2007-09-26 | 株式会社东芝 | Thermoelectric conversion module and method of manufacturing the same |
| WO2017074003A1 (en) * | 2015-10-27 | 2017-05-04 | 한국과학기술원 | Flexible thermoelectric device and method for preparing same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110435067B (en) | 2021-04-13 |
| CN107738396B (en) | 2019-10-15 |
| CN110421773B (en) | 2021-04-23 |
| CN110435067A (en) | 2019-11-12 |
| CN107738396A (en) | 2018-02-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107738396B (en) | Modified polyurethane for thermoelectric semiconductor filling and the thermoelectric semiconductor using the modified polyurethane fill mold, foam process | |
| CN100504244C (en) | High power compact thermostatic device without liquid cooling | |
| CN209426012U (en) | A kind of polytetrafluoroethylene (PTFE) plate molding die | |
| CN107131699A (en) | Cold storage semiconductor freezer | |
| CN2811886Y (en) | Semiconductor refrigerator | |
| CN106073377A (en) | Automatically dry in the air water tumbler | |
| CN107543440B (en) | The manufacturing method and temperature-uniforming plate of temperature-uniforming plate | |
| CN108359070A (en) | A kind of modified polyurethane foam process for thermoelectric semiconductor filling | |
| CN217811908U (en) | Insulation board, refrigeration house and refrigeration equipment | |
| CN101893346A (en) | Method for manufacturing multifunctional semiconductor refrigerating and heating dual-purpose case | |
| CN205863207U (en) | A kind of chain type transmission system | |
| CN214294042U (en) | Cooling device for silicone sealant production | |
| CN209772156U (en) | Electronic condensing device for laboratory | |
| CN203642427U (en) | Novel modular radiant plate | |
| CN207163007U (en) | A kind of semiconductor dual chip refrigeration system | |
| CN212231963U (en) | Water-based graphene composite heat dissipation device for refrigerator | |
| CN101726067A (en) | Cold and warm temperature-controlled wall-hanged air conditioner | |
| CN204717946U (en) | A kind of solar energy evacuated air-conditioning | |
| CN218627783U (en) | High-temperature vacuum sintering furnace device | |
| CN219841239U (en) | Cold box heat preservation device of low-temperature liquid pump | |
| CN217449830U (en) | Sealed production of gluing of organosilicon is with heating heat preservation device | |
| CN212183995U (en) | Heat abstractor for network equipment | |
| CN217433018U (en) | Novel indium strip solidification forming device | |
| CN2658653Y (en) | Semiconductor refrigerating adiabatic structure | |
| CN215222692U (en) | Electric power and electric installation device with automatic cooling function |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230726 Address after: No. 315, Building 2, Longguangshang Street Building, No. 16 Wenhai West Road, Hongxing Community, Ronggui Street, Shunde District, Foshan City, Guangdong Province, 528303 Patentee after: Foshan Jiuyan Technology Innovation Co.,Ltd. Address before: 93 Desheng East Road, Shunde District, Foshan City, Guangdong Province Patentee before: SHUNDE POLYTECHNIC |
|
| TR01 | Transfer of patent right |