CN110421773B - Foaming process of thermoelectric semiconductor filling mold - Google Patents
Foaming process of thermoelectric semiconductor filling mold Download PDFInfo
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- CN110421773B CN110421773B CN201910844927.6A CN201910844927A CN110421773B CN 110421773 B CN110421773 B CN 110421773B CN 201910844927 A CN201910844927 A CN 201910844927A CN 110421773 B CN110421773 B CN 110421773B
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- mold
- filling
- thermoelectric semiconductor
- foaming
- cavity
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C44/00—Shaping by internal pressure generated in the material, e.g. swelling or foaming ; Producing porous or cellular expanded plastics articles
- B29C44/02—Shaping by internal pressure generated in the material, e.g. swelling or foaming ; Producing porous or cellular expanded plastics articles for articles of definite length, i.e. discrete articles
- B29C44/12—Incorporating or moulding on preformed parts, e.g. inserts or reinforcements
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- Casting Or Compression Moulding Of Plastics Or The Like (AREA)
- Polyurethanes Or Polyureas (AREA)
- Refrigerator Housings (AREA)
- Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
Abstract
The invention discloses a foaming process of a thermoelectric semiconductor filling mold, wherein the thermoelectric semiconductor comprises ceramic plates, P-type semiconductors, N-type semiconductors and flow deflectors, the P-type semiconductors and the N-type semiconductors are arranged between the two ceramic plates, the filling mold comprises an upper mold, a lower mold and left and right side positioning plates, the lower mold is provided with a positioning groove and a filling gun insertion hole, the edge of the thermoelectric semiconductor is placed on the lower mold positioning groove at an angle of 45 degrees relative to the horizontal line, the upper mold is provided with an exhaust hole and a vacuumizing self-sealing process adapter tube, and a modified polyurethane foaming material is filled into a mold cavity through the filling gun insertion hole, so that the thermoelectric semiconductor is filled with the modified polyurethane foaming material in a gap between the; the filling process carries out vacuum pumping operation on the die cavity of the thermoelectric semiconductor filling die, so that the inside of the whole die cavity keeps a preset negative pressure, and a potential force field of lower cavity pushing, micro-channel extruding and upper cavity traction is formed before foaming of the polyurethane foaming agent, thereby completing the foaming process. The invention greatly improves the performance of the thermoelectric semiconductor.
Description
The technical field is as follows:
the invention relates to the technical field of thermoelectric semiconductor performance improvement, in particular to a foaming process for filling a mold with a thermoelectric semiconductor.
Background art:
along with the rapid development of economy, electrical appliances such as refrigerators and the like are more and more popularized, the consumption of energy consumption is more and more, China is a big energy consumption country, how to reduce the energy consumption, realize sustainable development and be friendly and harmonious with the environment becomes one of the hot problems of the research of many scholars in the current society. Semiconductor refrigeration is a novel refrigeration mode with good development prospect in the society with rapidly-developed, increasingly-improved living standard and higher requirement on living comfort level.
The semiconductor refrigeration is a current transduction type refrigeration mode, also called thermoelectric refrigeration, namely, the refrigeration and heating can be realized, the high-precision control on the temperature can be realized by controlling the input current, and the refrigeration process does not need any refrigerant, has no rotating part, has no noise and has no vibration. The key to the realization of the semiconductor refrigeration is the semiconductor refrigeration piece. The existing semiconductor refrigerating sheet utilizes a special semiconductor material to form a P-N junction, and air is arranged in a gap between an N-type semiconductor and a P-type semiconductor, so that the air convection phenomenon can cause short circuit of a cold end and a hot end, and the refrigerating performance is seriously influenced; secondly, the insulation strength is reduced due to the humid air, and the creepage distance is unqualified; and accelerating the aging of the semiconductor.
Chinese patent cn201420306709.x discloses a semiconductor refrigeration device comprising a semiconductor refrigeration sheet, which is composed of an upper substrate, a lower substrate and a plurality of groups of P-N junction semiconductors positioned between the upper substrate and the lower substrate, wherein an aerogel layer with heat insulation and insulation effects is filled in a gap between the upper substrate and the lower substrate, so that the refrigeration efficiency under power consumption is improved by more than 10%. However, according to the general knowledge, the thermal insulation performance of the filled silica material is reduced, and the refrigeration performance of the refrigeration plate is impaired.
The invention content is as follows:
the technical problem to be solved by the invention is as follows: the foaming process of the thermoelectric semiconductor filling mold is provided, so that the refrigerating performance of the thermoelectric semiconductor is improved, and the defects of the prior art are overcome.
In order to achieve the purpose, the invention adopts the technical scheme that: a foaming process for filling a thermoelectric semiconductor into a mold, wherein the thermoelectric semiconductor comprises a ceramic plate, a P-type semiconductor, an N-type semiconductor and a flow deflector, the P-type and N-type semiconductors are arranged between the two ceramic plates, and the foaming process is characterized in that: the filling mold comprises an upper mold, a lower mold and left and right side positioning plates, wherein the lower mold is provided with a positioning groove and a filling gun insertion hole, the edge of the thermoelectric semiconductor is placed on the lower mold positioning groove at an angle of 45 degrees relative to the horizontal line, the upper mold is provided with an exhaust hole and a vacuumizing self-sealing process connecting pipe, and the modified polyurethane foaming material is filled into the mold cavity through the filling gun insertion hole, so that the thermoelectric semiconductor is filled into a gap between the two ceramic plates; the filling process carries out vacuum pumping operation on the die cavity of the thermoelectric semiconductor filling die, so that the inside of the whole die cavity keeps a preset negative pressure, and a potential force field of lower cavity pushing, micro-channel extruding and upper cavity traction is formed before foaming of the polyurethane foaming agent, thereby completing the foaming process.
The upper die and the lower die are provided with positioning fit, and a double-ladder groove bridge type diversion quick filling cavity is formed.
Trapezoidal grooves are arranged in the upper die and the lower die, and a sealing gasket is arranged between the thermoelectric semiconductor and the positioning groove.
A plurality of thermoelectric semiconductors are arranged in the die cavity in an overhead mode, a protection sheet is arranged between every two adjacent thermoelectric semiconductors, and protection pads are arranged between the thermoelectric semiconductors on the two sides and the side positioning plates.
The filling gun insertion hole has a sealing function, is sealed by a stud after filling, and the vacuumizing self-sealing process connecting pipe is a self-sealing mechanism, so that preset positive pressure and temperature are formed after foaming is finished, and the foaming chemical reaction is finished to reach the required optimal density and the minimum heat conductivity.
The modified polyurethane for filling the thermoelectric semiconductor comprises the following components in parts by weight: polyether polyol 20, azodicarbonamide 1, polyester polyol 40, foam stabilizer 4, monofluoro dichloroethane 20, diphenylmethane diisocyanate 200, octyl/decyl tertiary amine 2, tri-n-hexylamine 1; the modified polyurethane is used for filling gaps in thermoelectric semiconductors.
The invention has the beneficial effects that: the invention uses polyurethane foaming material with lower heat conductivity than air and higher insulating strength to fill in the micro-channel of the thermoelectric semiconductor for foaming and forming through diversion, pushing and negative pressure filling technology, and the foaming and forming process is converted into positive pressure sealing and temperature control, thereby greatly improving the performance of the thermoelectric semiconductor, reducing the power consumption of the refrigerator after boxing, obviously reducing the average temperature of the refrigerator body and greatly improving the reliability.
Due to the adoption of the modified formula, the polyurethane foaming agent has low viscosity and high fluidity, and the filling effectiveness is ensured.
The invention belongs to the pioneering technology in the field of thermoelectric semiconductors at home and abroad.
Description of the drawings:
fig. 1 is a schematic view of a thermoelectric semiconductor charging mold structure of the present invention.
Fig. 2 is a side view of fig. 1.
Fig. 3 is a structural layout diagram of a foaming cavity of a thermoelectric semiconductor filling die of the invention.
The specific embodiment is as follows:
reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In the description of the present invention, it is to be understood that the terms "front-back", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.
In the description of the present invention, it is to be noted that the terms "mounted," "connected," and "connected" are to be construed broadly and may be, for example, a fixed connection unless expressly specified or limited otherwise. Can also be detachably connected or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Referring to fig. 1-3, the thermoelectric semiconductor filling mold is divided into an upper mold 1 and a lower mold 2, the thermoelectric semiconductor 7 includes a ceramic plate, a P-type semiconductor, an N-type semiconductor, and a flow deflector, the P-type and N-type semiconductors are arranged between the two ceramic plates, the filling mold includes the upper mold 1, the lower mold 2, a left side positioning plate 5, a right side positioning plate 5, the lower mold is provided with a positioning groove 4 and a filling gun insertion hole 3, the thermoelectric semiconductor is placed on the lower mold positioning groove at 45 °, the upper mold is provided with an exhaust hole and a vacuum-pumping process connection pipe, and the modified polyurethane foam material is filled into the mold cavity through the filling. The upper die and the lower die are both designed in an open ladder groove mode, the processing technology is simple, the design requirement is easy to achieve, the processing cost is low, the processing ways are various, and the stamping die or the machining forming can be achieved. The upper and lower die assembly is waist drum type, the die assembly and die separation are simple and reliable, and self-correction alignment can be realized. The upper die is provided with an exhaust hole and a vacuumizing process connecting pipe, wherein one end of the vacuumizing process connecting pipe is welded with the die body, and the other end of the vacuumizing process connecting pipe is welded with the maintenance needle valve, so that the vacuumizing process connecting pipe is conveniently connected with a vacuum pump. The lower die is provided with a filling gun insertion hole, and the insertion hole is a sealing screw hole and can be sealed by a sealing bolt after filling.
And (3) placing the prepared thermoelectric semiconductor at 45 degrees on the positioning groove of the lower die, and sealing the thermoelectric semiconductor and the groove by using a rubber pad (the rubber pad and the groove are integrally bonded) to form a lower bridge arm. Thermoelectric refrigeration pieces are stacked in the lower die trapezoidal groove in an overhead mode to form an M-shaped cavity, adhesive paper 8 is arranged between the refrigeration pieces and used for protecting the ceramic surface of the sealing box, and the thermoelectric refrigeration pieces at two ends and the front end cover and the rear end cover are sealed by rubber 9 (the rubber seal is bonded with the front end cover and the rear end cover into a whole). The lower bridge wall forms a sealed M-shaped injection cavity with the lower die and the front and rear end caps, and the charging agent is forced to flow through the micro-channels through the thermoelectric cooling fins.
And after the upper die and the lower die are assembled, an upper bridge arm is formed, and the upper bridge arm and the lower bridge wall form a complete diversion bridge. The upper die cavity is a W diversion cavity, the upper die cavity and the groove of the upper die are also sealed, and the filling agent flows out of the upper bridge arm.
Before filling, vacuum pumping operation is carried out, negative pressure is formed in the whole cavity, and a potential force field of pushing a lower cavity, extruding a micro-channel and drawing an upper cavity is formed on the polyurethane foaming agent before foaming, so that the foaming process is finished. Fill and annotate the hole and have sealed function concurrently, fill and annotate and to be sealed by the double-screw bolt after accomplishing, the technology is taken over and is self-sealing mechanism, guarantees to form predetermined malleation and temperature after the foaming is accomplished, accomplishes the foaming chemical reaction and reaches required best density and minimum heat conductivity.
As shown in Table 1, the modified polyurethane foaming agent with low viscosity and high fluidity obtained by adding the modifying material to the main polyurethane foaming agent composition and ratio has improved foaming density, improved adhesive strength, reduced thermal conductivity to 1/2 of air, and the insulation strength to the factory specifications. Processing conditions are as follows: mixing the formula according to the mass fraction, stirring for 10 seconds at 25 ℃, injecting into a mold, and foaming for 10 minutes at 25 ℃ to obtain the following properties: foam density 0.034g/cm3Thermal conductivity 0.015W/(m.K), and adhesive strength 400 MPa.
TABLE 1 Low viscosity high flow polyurethane blowing agent, viscosity (25 ℃ C.: 50CPS
The present invention is not limited to the above-described embodiments, and various modifications and variations of the present invention are intended to be included within the scope of the claims and the equivalent technology of the present invention if they do not depart from the spirit and scope of the present invention.
Claims (5)
1. A foaming process for filling a thermoelectric semiconductor into a mold, wherein the thermoelectric semiconductor comprises a ceramic plate, a P-type semiconductor, an N-type semiconductor and a flow deflector, the P-type and N-type semiconductors are arranged between the two ceramic plates, and the foaming process is characterized in that: the filling mold comprises an upper mold, a lower mold and left and right side positioning plates, wherein the lower mold is provided with a positioning groove and a filling gun insertion hole, the edge of the thermoelectric semiconductor is placed on the lower mold positioning groove at an angle of 45 degrees relative to the horizontal line, the upper mold is provided with an exhaust hole and a vacuumizing self-sealing process connecting pipe, and the modified polyurethane foaming material is filled into the mold cavity through the filling gun insertion hole, so that the thermoelectric semiconductor is filled into a gap between the two ceramic plates; the filling process carries out vacuum pumping operation on the die cavity of the thermoelectric semiconductor filling die, so that the inside of the whole die cavity keeps a preset negative pressure, and a potential force field of lower cavity pushing, micro-channel extruding and upper cavity traction is formed before foaming of the polyurethane foaming agent, thereby completing the foaming process.
2. The foaming process of the thermoelectric semiconductor filled mold according to claim 1, wherein: the upper die and the lower die are provided with positioning fit, and a double-ladder groove bridge type diversion quick filling cavity is formed.
3. The foaming process of the thermoelectric semiconductor filled mold according to claim 2, wherein: trapezoidal grooves are arranged in the upper die and the lower die, and a sealing gasket is arranged between the thermoelectric semiconductor and the positioning groove.
4. A foaming process for filling a mold with a thermoelectric semiconductor according to claim 3, wherein: a plurality of thermoelectric semiconductors are arranged in the die cavity in an overhead mode, a protection sheet is arranged between every two adjacent thermoelectric semiconductors, and protection pads are arranged between the thermoelectric semiconductors on the two sides and the side positioning plates.
5. The foaming process of the thermoelectric semiconductor filled mold according to claim 1, wherein: the filling gun insertion hole has a sealing function, is sealed by a stud after filling, and the vacuumizing self-sealing process connecting pipe is a self-sealing mechanism, so that preset positive pressure and temperature are formed after foaming is finished, and the foaming chemical reaction is finished to reach the required optimal density and the minimum heat conductivity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910844927.6A CN110421773B (en) | 2017-09-01 | 2017-09-01 | Foaming process of thermoelectric semiconductor filling mold |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710778049.3A CN107738396B (en) | 2017-09-01 | 2017-09-01 | Modified polyurethane for thermoelectric semiconductor filling and the thermoelectric semiconductor using the modified polyurethane fill mold, foam process |
| CN201910844927.6A CN110421773B (en) | 2017-09-01 | 2017-09-01 | Foaming process of thermoelectric semiconductor filling mold |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201710778049.3A Division CN107738396B (en) | 2017-09-01 | 2017-09-01 | Modified polyurethane for thermoelectric semiconductor filling and the thermoelectric semiconductor using the modified polyurethane fill mold, foam process |
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| Publication Number | Publication Date |
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| CN110421773A CN110421773A (en) | 2019-11-08 |
| CN110421773B true CN110421773B (en) | 2021-04-23 |
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| CN201710778049.3A Active CN107738396B (en) | 2017-09-01 | 2017-09-01 | Modified polyurethane for thermoelectric semiconductor filling and the thermoelectric semiconductor using the modified polyurethane fill mold, foam process |
| CN201910860652.5A Active CN110435067B (en) | 2017-09-01 | 2017-09-01 | Thermoelectric semiconductor foamed by adopting mold |
| CN201910844927.6A Active CN110421773B (en) | 2017-09-01 | 2017-09-01 | Foaming process of thermoelectric semiconductor filling mold |
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| CN201710778049.3A Active CN107738396B (en) | 2017-09-01 | 2017-09-01 | Modified polyurethane for thermoelectric semiconductor filling and the thermoelectric semiconductor using the modified polyurethane fill mold, foam process |
| CN201910860652.5A Active CN110435067B (en) | 2017-09-01 | 2017-09-01 | Thermoelectric semiconductor foamed by adopting mold |
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| CN108359070A (en) * | 2018-03-01 | 2018-08-03 | 顺德职业技术学院 | A kind of modified polyurethane foam process for thermoelectric semiconductor filling |
| WO2021007848A1 (en) * | 2019-07-18 | 2021-01-21 | 浙江大学 | Foamed microchannel film with foam pores interconnected with microchannels, and preparation method therefor |
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2017
- 2017-09-01 CN CN201710778049.3A patent/CN107738396B/en active Active
- 2017-09-01 CN CN201910860652.5A patent/CN110435067B/en active Active
- 2017-09-01 CN CN201910844927.6A patent/CN110421773B/en active Active
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| CN1436117A (en) * | 2000-06-14 | 2003-08-13 | 纳幕尔杜邦公司 | Encapsulation using microcellular foamed materials |
| JP2003008087A (en) * | 2001-04-18 | 2003-01-10 | Suzuki Sogyo Co Ltd | Thermoelectric element module and its manufacturing method |
| WO2005114649A3 (en) * | 2004-05-19 | 2006-01-05 | Bed Check Corp | Silk-screen thermocouple |
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| WO2017074003A1 (en) * | 2015-10-27 | 2017-05-04 | 한국과학기술원 | Flexible thermoelectric device and method for preparing same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110435067A (en) | 2019-11-12 |
| CN110435067B (en) | 2021-04-13 |
| CN110421773A (en) | 2019-11-08 |
| CN107738396A (en) | 2018-02-27 |
| CN107738396B (en) | 2019-10-15 |
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Effective date of registration: 20230726 Address after: No. 315, Building 2, Longguangshang Street Building, No. 16 Wenhai West Road, Hongxing Community, Ronggui Street, Shunde District, Foshan City, Guangdong Province, 528303 Patentee after: Foshan Jiuyan Technology Innovation Co.,Ltd. Address before: 93 Desheng East Road, Shunde District, Foshan City, Guangdong Province Patentee before: SHUNDE POLYTECHNIC |