CN110391205A - 堆叠型功率模块及其制造方法 - Google Patents

堆叠型功率模块及其制造方法 Download PDF

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Publication number
CN110391205A
CN110391205A CN201811381206.8A CN201811381206A CN110391205A CN 110391205 A CN110391205 A CN 110391205A CN 201811381206 A CN201811381206 A CN 201811381206A CN 110391205 A CN110391205 A CN 110391205A
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CN
China
Prior art keywords
power semiconductor
grid
stacked
power module
emitter
Prior art date
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Pending
Application number
CN201811381206.8A
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English (en)
Inventor
韩光濬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Modern Auto Co Ltd
Hyundai Motor Co
Kia Corp
Original Assignee
Modern Auto Co Ltd
Kia Motors Corp
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Application filed by Modern Auto Co Ltd, Kia Motors Corp filed Critical Modern Auto Co Ltd
Publication of CN110391205A publication Critical patent/CN110391205A/zh
Pending legal-status Critical Current

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Abstract

本发明涉及一种堆叠型功率模块，包括：功率半导体，在一个表面上彼此相邻地形成有焊盘形状的栅极和发射极，在另一表面上形成有焊盘形状的集电极；上部基板层，堆叠在功率半导体的上部并且在下表面形成有金属层，集电极与该金属层电连接；和下部基板层，堆叠在功率半导体的下部并且在上表面形成有金属层，栅极和发射极均与该金属层电连接。

Description

堆叠型功率模块及其制造方法
技术领域
本发明涉及一种堆叠型功率模块及其制造方法，更具体地，涉及一种用于确保能够具有薄而轻的芯片的高密度和高集成度以及成本竞争力的结构的堆叠型功率模块及其制造方法。
背景技术
近年来，随着电子设备的高速、大容量和高集成度的推进，功率器件变得更小和更轻且成本更低。为此目的，使用了形成堆叠型功率模块的方法，其中多个半导体芯片安装在一个半导体封装中。
另一方面，对汽车电动机中的功率器件的小型化和轻量化的需求不断增长。也就是说，由于汽车电动机需要交流(AC)电流，而电池是直流(DC)电源，因此需要能够将电池的DC电流转换为AC电流的逆变器。此时，逆变器包括用于生成电流极性的功率模块。
图1是示出一般堆叠型功率模块的图示。
参照图1，堆叠型功率模块1通过引线键合50将设置在上部基板10与下部基板20之间的功率半导体30和引线框架40彼此连接。
如上所述，作为廉价且简单的连接方法，主要使用引线键合50，但是由于引线的环路高度，必须确保模块内部的额外空间。
因此，堆叠型功率模块1应该具有用于确保内部的额外空间的间隔件60，这不仅难以减小功率模块1的厚度，而且提高了成本。
因此，需要堆叠型功率模块1确保能够具有薄而轻的芯片的高密度和高集成度的结构，并具有成本竞争力并且还要确保耐热性和散热性能。
现有技术说明书中描述的内容有助于理解本发明的背景，并且可以包括本发明所属领域的技术人员之前未知的内容。
发明内容
本发明的目的在于提供一种堆叠型功率模块及其制造方法，其通过去除间隔件来确保能够具有薄而轻的芯片的高密度和高集成度，以及成本竞争力的结构，因为功率半导体和引线框架通过基板直接连接，而不通过引线键合将它们互连。
根据本发明的实施例的一种堆叠型功率模块包括：功率半导体，具有：栅极和发射极，栅极和发射极均具有焊盘形状，在功率半导体的一个表面上彼此相邻；以及集电极，在功率半导体的另一表面上，具有焊盘形状；上部基板层，堆叠在功率半导体的上部，并且电连接至具有与集电极接触的下表面的金属层；以及下部基板层，堆叠在功率半导体的下部，并且电连接至具有与栅极和发射极接触的上表面的金属层。
上部基板层和下部基板层均可以形成有上部金属层、陶瓷层和下部金属层的堆叠结构，作为用于将功率半导体中产生的热量排放到外部的路径。
上部基板层的下部金属层和下部基板层的上部金属层中的至少一个可以与功率半导体电连接。
功率半导体可以通过倒装芯片工艺旋转180°以反向堆叠。
功率半导体可以通过栅极进行接通/关断开关控制，并将从集电极输入的DC电流转换为AC电流以输出到发射极。
可以通过底部填充工艺填充绝缘树脂。绝缘树脂可以填充到栅极的多个端子焊盘之间的空间中以及栅极与发射极的端子焊盘之间的空间中。
绝缘树脂可以是含有硅石或二氧化硅(SiO2)填料的热固性环氧树脂。
在绝缘树脂中，填料的形状可以是球状的，并且填料的最大直径可以调整为等于或小于待填充空间的最窄宽度的一半。
在绝缘树脂中，以绝缘树脂的总重量为基准，填料的含量可以调整至50重量％以上，并且热膨胀系数可以调整至20(ppm/℃)以下。
堆叠型功率模块可以还包括：第一引线框架和第二引线框架，分别连接至形成在下部基板层的上表面上的金属层；并且第一引线框架可以接收从外部传递到栅极的控制信号，并且第二引线框架接收从发射极传递到外部的AC电流。
堆叠型功率模块可以还包括用于功率半导体、上部基板层、下部基板层、第一引线框架和第二引线框架的成形部，其包括环氧模塑料(EMC)。
根据本发明的另一实施例的一种制造堆叠型功率模块的方法包括以下步骤：印刷用于将功率半导体接合到下部基板层的上表面的电路图案；通过倒装芯片工艺，将在功率半导体的一个表面上彼此间隔开形成的焊盘形状的栅极和发射极接合到在下部基板层的上表面上形成的金属层；通过底部填充工艺，在栅极和发射极的周边空间中填充绝缘树脂；将第一引线框架和第二引线框架连接至在下部基板层的上表面上形成的金属层；以及将在功率半导体的另一表面上形成的焊盘形状的集电极接合到在上部基板层的下表面形成的金属层。
根据实施例，制造堆叠型功率模块的方法可以还包括：在将功率半导体接合到上部基板层的步骤之后，执行环氧模塑料(EMC)模塑。
绝缘树脂可以填充在栅极的多个端子焊盘之间的空间中以及栅极和发射极的端子焊盘之间的空间中。
填充绝缘树脂的步骤可以包括：使用注射器以点胶方法填充绝缘树脂，然后使绝缘树脂在高温室中固化。
本发明可以通过去除间隔件来确保能够具有薄而轻的芯片的高密度和高集成度，以及成本竞争力的结构，因为功率半导体和引线框架通过基板直接连接而不通过引线键合将它们互连。
此外，本发明可以去除间隔件以减少整个制造过程中的工艺和部件的数量，从而提高成本竞争力。
此外，本发明可以去除间隔件以减小Z轴高度以减小整体尺寸，从而实现高密度。
此外，本发明可以通过功率半导体、上部基板层和下部基板层之间的直接接触来增强散热性能。
附图说明
图1是示出一般堆叠型功率模块的图示。
图2是示出根据本发明的实施例的堆叠型功率模块的图示。
图3是示出功率半导体的焊盘的图示。
图4是示出根据本发明的实施例的制造堆叠型功率模块的方法的图示。
图5是说明图4中的倒装芯片工艺的图示。
图6是说明图4中的底部填充工艺的图示。
具体实施方式
在下文中，将参照附图详细描述本发明的示例性实施例。然而，在以下描述和附图中，将省略可能模糊本发明的主旨的公知功能或配置的详细描述。此外，应该注意的是，在整个附图中，尽可能用相同的附图标记表示相同的部件。
应当理解，在下文中描述的说明书和权利要求中使用的术语或词语不应被解释为限于一般或词典含义，而是在发明人被允许适当地定义术语以获得最佳解释的原则下基于对应于本发明的技术方面的含义和概念来解释。
因此，本说明书中描述的实施例和附图中示出的配置仅仅是本发明的最优选的一个实施例，并不旨在表示本发明的所有技术精神。因此，应该理解的是，在提交本申请时，可以用各种等同物和修改代替上述那些内容。
在附图中夸大、省略或示意性地示出了一些元件，并且各个元件的实际尺寸不一定在附图中示出。本发明不受附图中所示的相对尺寸或距离的限制。
在整个说明书中，当特定部分“包括”特定部件时，这并不意味着排除了其他部件，而是可以进一步包括其他部件，除非另外特别说明。此外，当特定部分“连接”至另一部分时，它可以与插入其间的其他元件“直接连接”或“电连接”。
除非上下文另外明确指明，否则单数形式旨在同样包括复数形式。将理解的是，术语“包括”或“包含”规定本说明书中描述的特征、整数、步骤、操作、元件、组件或其组合的存在，但不排除一个或多个其他特征、整数、步骤、操作、元件、组件和/或其组合的存在或添加。
如说明书中所使用的术语“～单元”表示执行某些任务的软件或硬件组件，例如FPGA或ASIC。然而，“～单元”并不意味着仅限于软件或硬件。术语“～单元”可以有利地配置为驻留在可寻址存储介质上并且配置为在一个或多个处理器上执行。因此，作为示例，“～单元”可以包括诸如软件组件、面向对象的软件组件、类组件和任务组件的组件、过程、功能、属性、程序、子程序、程序代码段、驱动器、固件、微代码、电路、数据、数据库、数据结构、表、数组和变量。组件和“～单元”中提供的功能可以组合成更少的组件和“～单元”或进一步分成附加组件和“～单元”。
在下文中，将参照附图详细描述本发明的示例性实施例，使得本领域技术人员可以容易地实施本发明。然而，本发明可以以各种不同的形式实现，而不限于这里描述的示例性实施例。在附图中，为了清楚地描述本发明，将省略与本发明的描述无关的部分，并且在整个说明书中，相同的部分用相同的附图标记表示。
在下文中，将参照附图描述本发明的示例性实施例。
图2是示出根据本发明的实施例的堆叠型功率模块的图示，并且图3是示出功率半导体的焊盘的图示。
如图2所示，根据本发明的实施例的堆叠型功率模块100可以通过去除间隔件来确保能够具有薄而轻的芯片的高密度和高集成度，以及成本竞争力的结构，因为功率半导体和引线框架直接通过基板连接，而不通过引线键合将它们互连。
为此目的，堆叠型功率模块100通过倒装芯片工艺将功率半导体反向地直接连接至基板，从而通过基板将功率半导体的端子焊盘和引线框架连接，而不需引线键合。
然而，堆叠型功率模块100需要通过将功率半导体的端子焊盘直接接合到基板来确保功率半导体的端子焊盘的绝缘特性。
因此，当功率半导体的端子焊盘接合到基板时，堆叠型功率模块100通过底部填充工艺填充有绝缘树脂，以确保功率半导体的端子焊盘的绝缘性能。
这里，描述了堆叠型功率模块100实现为双侧冷却(DSC)结构的情况，但是本发明不限于此，其还可以应用于实现为单侧冷却结构的情况。
堆叠型功率模块100包括上部基板层110、下部基板层120、功率半导体130、绝缘树脂140、第一引线框150a和第二引线框150b、以及成形部160。
上部基板层110和下部基板层120是在陶瓷层的两个表面上印刷有金属层的基板并且具有高散热性和高绝缘特性。
也就是说，上部基板层110堆叠有第一上部金属层111、第一陶瓷层112和第一下部金属层113，并且下部基板层120堆叠有第二上部金属层121、第二陶瓷层122和第二下部金属层123。
因此，上部基板层110和下部基板层120中的每一个都具有形成在其两个表面上的金属层，以形成双侧冷却结构。也就是说，功率半导体130设置在上部基板层110与下部基板层120之间。这可以改善散热性能，因为通过去除现有的间隔件，功率半导体130直接与上部基板层110和下部基板层120接触。因此，功率半导体130中产生的热量通过连接至上部基板层110的第一下部金属层113、第一陶瓷层112和第一上部金属层111的路径排放到外部，并且可以通过连接至下部基板层120的第二上部金属层121、第二陶瓷层122和第二下部金属层123的路径排放到外部。
特别地，用于与功率半导体130电连接的电路图案印刷在上部基板层110的第一下部金属层113和下部基板层120的第二上部金属层121中的至少任一个上，其可以用作通过功率半导体130的倒装芯片工艺接合功率半导体130的中间基板。
这里，第一陶瓷层112和第二陶瓷层122是诸如氧化铝(Al2O3)和氮化硅(Si3N4)的绝缘材料，并且第一上部金属层111、第一下部金属层113、第二上部金属层121、第二下部金属层123可以由铜(Cu)、铝(Al)等制成。
上部基板层110和下部基板层120可以由各种材料和结构形成，例如，厚膜铜(TFC)、PCB、FPCB(柔性PCB)、绝缘金属基板(IMS)、预成型接头(sub)、直接覆铜(DBC)和陶瓷。
功率半导体130可以是用于将DC电流转换为AC电流的大功率及高速开关装置，例如，绝缘栅双极晶体管(IGBT)等。
此时，与图1不同，功率半导体130通过倒装芯片工艺旋转180°以反向接合。例如，在图1中，如果功率半导体130的一个表面接合到上部基板层110，则在图2中功率半导体130的同一表面接合到下部基板层120。因此，图1中通过引线键合的电连接关系在图2中是通过下部基板层120形成电连接关系的。
作为用作开关元件的端子的功率半导体130，包括栅极131、发射极132以及集电极133，并且这些端子以暴露于外部的焊盘形状形成在两个表面上，以用于上部基板层110和下部基板层120的电连接。
参照图3，功率半导体130在一个表面上形成有多个焊盘形状栅极131和与栅极131位于同一平面上的单个焊盘形状发射极132，并且在另一表面上形成有单个焊盘形状集电极133。
具体地，栅极131和发射极132与形成在下部基板层120的上表面的金属层接合并电连接，并且集电极133与形成在上部基板层的下表面的金属层接合并电连接。
这里，下部基板层120的上表面和上部基板层110的下表面全部成为面向功率半导体130的表面。因此，功率半导体130通过栅极131执行接通/关断开关控制，并且将从集电极133输入的DC电流转换为AC电流，以将其提供给发射极132。
然而，如图3所示，栅极131形成有多个相邻的焊盘，并且发射极132形成有与栅极131相同的平面相邻的焊盘。
因此，由于栅极131和发射极132在功率半导体130的同一平面上形成为彼此相邻并且与形成在下部基板层120的上表面的金属层电连接，因此执行用于确保绝缘的底部填充工艺。也就是说，通过底部填充工艺，栅极131与发射极132的端子焊盘之间的空间填充有用于确保电绝缘的绝缘树脂140。
绝缘树脂140填充在栅极131中的多个端子焊盘之间的空间中以及栅极131与发射极132之间的端子焊盘之间的空间中。
绝缘树脂140是含有硅石或二氧化硅(SiO2)填料的热固性环氧树脂。此时，通过使用注射器的点胶(dispensing)方法而非喷射方法来填充绝缘树脂140，然后在高温室中固化。
这里，可以调整绝缘树脂140中所包含的填料的形状和尺寸以填充细小空间(间隙)。
具体地，填料的形状可以是板状或球状，但是球状可以用于促进微细空间渗透。就填料的尺寸而言，当使用球状填料时，其最大直径调整为小于待填充空间的最窄宽度的一半。将填料的含量调整至50重量％以上(以绝缘树脂的总重量为准)，由此使热膨胀系数为20(ppm/℃)以下。
第一引线框架150a和第二引线框架150b接合到下部基板层120的上部金属层。
第一引线框架150a和第二引线框架150b将功率半导体130连接至外部电路以传输电信号。也就是说，第一引线框架150a连接至形成在下部基板层120的上表面的金属层，用于接收从外部传输到功率半导体130的栅极131的控制信号。同样地，第二引线框架150b连接至形成在下部基板层120的上表面的金属层，以接收从功率半导体130的发射极132传输到外部的AC电流。
在如上所述完成功率半导体130的封装之后，通过环氧模塑料(EMC)模塑形成成形部160。成形部160密封功率半导体130的封装结构，以保护功率半导体130的封装结构免受外部潮湿或冲击。
功率半导体130以及第一引线框架150a和第二引线框架150b通过接合工艺与上部基板层110或下部基板层120堆叠。这里，接合工艺可以是例如焊料/焊接、烧结膏/烧结、瞬态液相(TLP)等。
具体地，在焊料/焊接中，使用锡(Sn)基化学组成物，并且在接合表面上形成金属间化合物并且接合。
在烧结膏/烧结中，可以使用银(Ag)基烧结膏/烧结和铜(Cu)基烧结。具体地，银基烧结膏/烧结通过使银粉末颗粒形成糊状并在高温下烧结而接合。压力可以是大气压或高压。铜基烧结膏/烧结通过使铜粉颗粒形成糊状并在高温/高压下烧结而接合。这里，填料可以是铜(Cu)、氧化铜(CuO2)、铜-锡(Cu-Sn)等。
TLP是液相转变扩散接合工艺，其中铜(Cu)和锡(Sn)由100％的金属间化合物形成。TLP类似于焊接，但处理时间超过1小时。
图4是示出根据本发明的实施例的用于制造堆叠型功率模块的方法的图示；图5是说明图4中的倒装芯片工艺的图示，并且图6是说明图4中的底部填充工艺的图示。
参照图4，在S1中，形成下部基板层120。这里，将用于与功率半导体130接合的电路图案印刷在下部基板层120的上表面。
然后，在S2和S3中，通过焊接印刷将功率半导体130堆叠在下部基板层120上。这里，功率半导体130通过倒装芯片工艺旋转180°，以反向接合到下部基板层120。此时，功率半导体130的栅极131和发射极132接合到下部基板层120。另一方面，以往，功率半导体130的集电极133接合在下部基板层120上。
这里，如果在接收功率半导体130时可以在反转状态下执行倒装芯片工艺，则可以在没有特殊设备的情况下利用安装设备安装芯片。如果需要将功率半导体130旋转180°，则使用如图5所示的两个拾取头(head)(拾取头A和拾取头B)执行芯片安装。也就是说，位于环状框架上的功率半导体130被拾取头A(HA)旋转180°，并且旋转180°的功率半导体130从拾取头A(HA)移动到拾取头B(HB)，然后安装在下部基板层120上。
然后，在S4中，为了确保端子焊盘对功率半导体130的栅极131和发射极132的绝缘性能，当功率半导体130通过倒装芯片工艺接合到下部基板层120时，执行底部填充工艺。也就是说，在栅极131与发射极132的端子焊盘之间形成的空间填充有绝缘树脂140。
这里，在底部填充工艺中，使用如图6所示的注射器SG排出绝缘树脂140，以填充在端子焊盘中形成的空间中。
然后，在S5和S6中，通过焊料印刷将第一引线框架150a和第二引线框架150b堆叠在下部基板层120上。
第一引线框架150a通过印刷在下部基板层120的上表面的电路图案与功率半导体130的栅极131连接，而不是通过引线键合与功率半导体130的栅极131连接。如果第一引线框架150a通过引线键合与功率半导体130的栅极131连接，则需要间隔件，但是在这里，由于去除了间隔件，所以可以减小Z轴方向的高度。
然后，在S7和S8中，通过焊料印刷将上部基板层110堆叠在功率半导体130的集电极133上。
然而，如果第一引线框架150a通过引线键合与功率半导体130的栅极131连接，则还需要将间隔件接合到上部基板层110。也就是说，因为去除了间隔件，上部基板层110不需要执行用于接合间隔件的上部封装。
然后，在S9中，通过EMC模塑完成封装作为最终模块。
如上所述，根据本发明实施例的制造堆叠型功率模块的方法不包括插入间隔件的步骤，因为功率半导体130和第一引线框架150a没有通过引线键合连接，使得可以排除整个制造工艺中的一部分。这可以减少制造工艺和部件数量，从而有助于提高成本竞争力，此外，通过去除间隔件来减小Z轴方向的高度，从而预期因尺寸减小而得到高密度。
根据一些实施例的方法可以以程序指令的形式实现，该程序指令可以通过各种计算机装置执行以记录在计算机可读介质上。计算机可读介质可以包括程序指令、数据文件、数据结构等、或其组合。记录在介质上的程序指令可以是为本发明专门设计和构建的程序指令，或者可以是由计算机软件领域的技术人员使用的。计算机可读介质的示例包括诸如硬盘、软盘和磁带的磁性介质；诸如CDROM和DVD的光学介质；诸如软光盘的磁光介质；以及专门配置为存储和执行程序指令的硬件设备，如ROM，RAM和闪存。程序指令的示例包括诸如由编译器生成的机器语言代码，以及可以由使用解译器等的计算机执行的高级语言代码。
尽管本发明已经描述了应用于各种实施例的本发明的新颖特征，但是对于本领域技术人员而言显而易见的是，在不脱离本发明的范围的情况下，可以在上述的装置和方法的形式和细节上进行各种删除、替换和改变。因此，本发明的范围由所附权利要求限定，而不是由前述描述所限定。在所附权利要求的等同范围内的所有修改都包含在本发明的范围内。

Claims (18)

1.一种堆叠型功率模块，包括：
功率半导体，在一个表面上彼此相邻地形成有焊盘形状的栅极和发射极，在另一表面上形成有焊盘形状的集电极；
上部基板层，堆叠在所述功率半导体的上部并且在下表面形成有金属层，所述集电极与该金属层电连接；和
下部基板层，堆叠在所述功率半导体的下部并且在上表面形成有金属层，所述栅极和所述发射极均与该金属层电连接。
2.如权利要求1所述的堆叠型功率模块，
其中，所述上部基板层和所述下部基板层均具有上部金属层、陶瓷层和下部金属层的堆叠结构，作为用于将所述功率半导体中产生的热量排放到外部的路径。
3.如权利要求2所述的堆叠型功率模块，
其中，所述上部基板层的下部金属层和所述下部基板层的上部金属层中的至少一个与所述功率半导体电连接。
4.如权利要求1所述的堆叠型功率模块，
其中，所述功率半导体接合到所述下部基板层的上表面。
5.如权利要求1所述的堆叠型功率模块，
其中，所述功率半导体通过所述栅极执行接通/关断开关控制，并将从所述集电极输入的直流(DC)转换为交流(AC)以输出到所述发射极。
6.如权利要求1所述的堆叠型功率模块，
其中，在所述栅极的多个端子焊盘之间的空间中以及所述栅极与所述发射极的端子焊盘之间的空间中填充有底部填充绝缘树脂。
7.如权利要求1所述的堆叠型功率模块，
其中，所述绝缘树脂是含有硅石或二氧化硅(SiO2)填料的热固性环氧树脂。
8.如权利要求7所述的堆叠型功率模块，
其中，所述绝缘树脂的填料具有球形形状，其最大直径等于或小于待填充的所述栅极的多个端子焊盘之间的空间以及所述栅极与所述发射极的端子焊盘之间的空间的最窄宽度的一半。
9.如权利要求8所述的堆叠型功率模块，
其中，以所述绝缘树脂的总重量为基准，所述填料的含量为50重量％以上，并且热膨胀系数为20ppm/℃以下。
10.如权利要求1所述的堆叠型功率模块，还包括：
第一引线框架和第二引线框架，连接至设置在所述下部基板层的上表面上的金属层，
其中，所述第一引线框架接收从外部传递到所述栅极的控制信号，并且所述第二引线框架接收从所述发射极传递到外部的AC。
11.如权利要求10所述的堆叠型功率模块，还包括用于所述功率半导体、所述上部基板层、所述下部基板层、所述第一引线框架和所述第二引线框架的成形部，所述成形部包括环氧模塑料(EMC)。
12.一种制造堆叠型功率模块的方法，包括以下步骤：
印刷用于将功率半导体接合到下部基板层的上表面的电路图案；
通过倒装芯片工艺，将在所述功率半导体的一个表面上彼此间隔开形成的焊盘形状的栅极和发射极接合到在所述下部基板层的上表面上形成的金属层；
通过底部填充工艺，在栅极和发射极的周边空间中填充绝缘树脂；
将第一引线框架和第二引线框架连接至所述金属层；以及
将在所述功率半导体的另一表面上形成的焊盘形状的集电极接合到在上部基板层的下表面形成的金属层。
13.如权利要求12所述的方法，还包括以下步骤：
在将所述功率半导体接合到所述上部基板层的步骤之后，执行环氧模塑料(EMC)模塑。
14.如权利要求13所述的方法，
其中，所述栅极和所述发射极的周边空间包括所述栅极的多个端子焊盘之间的空间以及所述栅极与所述发射极的端子焊盘之间的空间。
15.如权利要求12所述的方法，
其中，填充所述绝缘树脂的步骤包括：
使用注射器以点胶方法填充所述绝缘树脂，然后使所述绝缘树脂在高温室中固化。
16.如权利要求12所述的方法，
其中，所述绝缘树脂是含有硅石或二氧化硅(SiO2)填料的热固性环氧树脂。
17.如权利要求16所述的方法，
其中，所述填料具有球形形状，其最大直径等于或小于待填充空间的最窄宽度的一半。
18.如权利要求17所述的方法，
其中，以所述绝缘树脂的总重量为基准，所述填料的含量为50重量％以上，并且热膨胀系数为20ppm/℃以下。
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