CN110346394A - Defect inspection method and defect detecting system - Google Patents
Defect inspection method and defect detecting system Download PDFInfo
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- CN110346394A CN110346394A CN201910662387.XA CN201910662387A CN110346394A CN 110346394 A CN110346394 A CN 110346394A CN 201910662387 A CN201910662387 A CN 201910662387A CN 110346394 A CN110346394 A CN 110346394A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
Abstract
A kind of defect inspection method and defect detecting system, comprising: provide wafer, the wafer includes detection faces, and the detection faces have defect to be detected；Obtain the defect information of the defect to be detected；Shooting amplification factor is obtained according to the defect information；Shooting processing is carried out to the defect to be detected according to the shooting amplification factor, obtains detection image, the detection image includes defect image to be detected.In the defect inspection method that technical solution of the present invention provides, the area information for first obtaining the defect to be detected obtains shooting amplification factor according to the area information, for the different size of defect to be detected, it is able to carry out corresponding amplification factor to adjust, to obtain the optimal shooting visual field.Clear and comprehensive defect image can once be shot by this method, avoid it is subsequent re-shoot, to improve to the efficiency of defects detection.
Description
Technical field
The present invention relates to semiconductor test field more particularly to a kind of defect inspection methods and defect detecting system.
Background technique
During manufacturing wafer, due to inevitably making crystal column surface generate a large amount of defects in manufacturing process.In order to guarantee
The quality of wafer needs to detect the defect of crystal column surface.
Existing defect inspection method includes: offer wafer, and the wafer includes detection faces, and the detection faces have to be checked
Survey defect；Detection faces are scanned by fault detection board, obtain the position coordinates of each defect of detection faces；It is lacked according to each
Sunken position coordinates carry out shooting processing to each defect respectively by scanning electron microscope (SEM), obtain the image of each defect.Scanning
Electronic Speculum is a kind of board for detecting wafer surface defects, and the resolution ratio with very high image can clearly reflect the shape of defect
Looks.
However, the amplification factor of scanning electron microscope is fixed in existing defect inspection method, be unable to satisfy it is various sizes of to
Detect the detection between defect.
Summary of the invention
Problems solved by the invention is to provide a kind of defect inspection method and defect detecting system, can be according to different sizes
Defect to be detected carry out the adjusting of corresponding shooting amplification factor, to obtain the optimal shooting visual field, avoid and repeatedly shoot
Problem improves the efficiency of defects detection.
To solve the above problems, the present invention provides a kind of defect inspection method, comprising: provide wafer, the wafer includes
Detection faces, the detection faces have defect to be detected；Obtain the defect information of the defect to be detected；According to the defect information
Obtain shooting amplification factor；Shooting processing is carried out to the defect to be detected according to the shooting amplification factor, obtains detection figure
Picture, the detection image include the image of defect to be detected.
Optionally, the area information of the location information of the defect to be detected and the defect to be detected.
It optionally, include: root according to the method that the shooting amplification factor carries out shooting processing to the defect to be detected
The defect to be detected and the shooting visual field are subjected to registration process according to the location information, make the defect to be detected and the bat
Take the photograph the center alignment in the visual field；After carrying out the registration process, shot according to the shooting amplification factor.
Optionally, the method for obtaining the defect information of the defect to be detected includes: to carry out to the detection faces of the wafer
Scanning obtains wafer image, has the corresponding defect image of the defect to be detected in the wafer image；To the wafer figure
As carrying out pixelation processing, the wafer image is divided into multiple block of pixels；The multiple block of pixels is detected, is obtained
The area of the defect image and position.
Optionally, the method for obtaining the area of the defect image includes: the pixel number of blocks for obtaining the defect image；
According to the product of the pixel number of blocks of the defect image and the single block of pixels area, the area of the defect image is obtained
Information.
Optionally, according to the defect information obtain shooting amplification factor method include: provide shooting field area N and
Defect visual field accounting constant α；According to the shooting field area N and defect visual field accounting constant α, shooting amplification factor x is obtained
=α N/n, wherein n is the area of the defect to be detected.
Optionally, the range of the defect visual field accounting constant α is 40%~70%.
Correspondingly, the present invention also provides a kind of defect detecting systems, comprising: information acquisition unit, for obtaining wafer
The defect information of surface defect to be detected；Amplification factor acquiring unit, for obtaining shooting times magnification according to the defect information
Number；Image acquisition unit obtains detection figure for shooting according to the shooting amplification factor to the defect to be detected
Picture, the detection image include the image of the amplified defect to be detected.
Optionally, the defect information includes: the location information of the defect to be detected and the face of the defect to be detected
Product information.
Optionally, the information acquisition unit includes: scan module, is scanned for the detection faces to the wafer,
Wafer image is obtained, there are in the wafer image the corresponding several defect images of several defects to be detected；Pixelation mould
The wafer image is divided into multiple block of pixels for carrying out pixelation processing to the wafer image by block；Detection module,
For detecting to the multiple block of pixels, area and the position of each defect image are obtained.
Optionally, described image acquiring unit includes: alignment modules, and being used for according to the positional information will be described to be detected
Defect and the shooting visual field carry out registration process, are directed at the defect to be detected and the center in the shooting visual field；Shooting module,
For being shot according to the shooting amplification factor after carrying out the registration process.
Compared with prior art, technical solution of the present invention has the advantage that
In the defect inspection method that technical solution of the present invention provides, the area information of the defect to be detected is obtained first,
Then shooting amplification factor is obtained according to the area information to be able to carry out pair for the different size of defect to be detected
The amplification factor answered is adjusted, to obtain the optimal shooting visual field.It is clear and comprehensive once to be shot by this method
Defect image, avoid it is subsequent re-shoot, to improve to the efficiency of defects detection.
Further, the range of the defect visual field accounting constant α is 40%~70%, the defect visual field within the scope of this
Defect image observed by accounting constant α is of moderate size, can either the defect to be detected visible in detail details, together
When can guarantee that the defect image is comprehensively apparent in the shooting visual field again.
Detailed description of the invention
Fig. 1 is a kind of flow chart of each step of defect inspection method；
Fig. 2 is the flow chart of each step of one embodiment of defect inspection method of the invention；
Fig. 3 to Fig. 6 is the structural schematic diagram of each step of one embodiment of defect inspection method of the invention；
Fig. 7 is one example structure schematic diagram of defect detecting system of the invention.
Specific embodiment
As described in background, the amplification factor of scanning electron microscope is fixed in the prior art, can not be according to meeting different rulers
The shooting of very little defect to be detected needs.
Fig. 1 is a kind of flow chart of defect inspection method embodiment, comprising:
Step S1 provides wafer, and the wafer includes detection faces, and the detection faces have defect to be detected；
Step S2, obtains the position of the defect to be detected by defect checking machine platform, and by the defect to be detected with
It is calibrated between scanning electron microscope；
Step S3 carries out the first shooting by the scanning electron microscope to preset amplification factor to the defect to be detected, obtains
Take shooting image；
Step S4 judges the defective patterns when the shooting image includes defective patterns；
When the area of the defective patterns does not meet preset area, step S5 is executed, carries out the after adjusting amplification factor
Two shootings.
Since in above-mentioned method, the amplification factor of the scanning electron microscope is fixed.If the defect to be detected is smaller,
The image then shot can not see the pattern of the defect to be detected；If defect to be detected is larger, shoot
Image can see the pattern of the infull defect to be detected.Two kinds of results can all impact final observation, need to adjust again
Amplification factor shooting is saved until image clearly.
To solve the above-mentioned problems, the present invention provides a kind of defect inspection methods, comprising: obtains the defect to be detected
Defect information；Shooting amplification factor is obtained according to the defect information；According to the shooting amplification factor to described to be detected
Defect is shot, and obtains detection image, the detection image includes the image of the amplified defect to be detected.By this
Sunken detection method can disposably shoot clear and comprehensive defect image, to improve detection efficiency.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment explain in detail.
Fig. 2 is the flow chart of one embodiment of defect inspection method of the embodiment of the present invention, comprising:
Step S10 provides wafer, and the wafer includes detection faces, and the detection faces have defect to be detected；
Step S20 obtains the defect information of the defect to be detected；
Step S30 obtains shooting amplification factor according to the defect information；
Step S40 carries out shooting processing to the defect to be detected according to the shooting amplification factor, obtains detection figure
Picture, the detection image include defect image to be detected.
The defect detection procedure is described in detail below in conjunction with attached drawing.
Fig. 3 to Fig. 6 is the structural schematic diagram of each step of one embodiment of defect inspection method of the invention.
Referring to FIG. 3, Fig. 3 is the detection faces structural schematic diagram of wafer, wafer 100 is provided, the wafer 100 includes detection
Face, the detection faces have defect 101 to be detected.
The wafer 100 is used to form semiconductor structure.During forming wafer 100, inevitably make the inspection
It is defective to survey mask.In the present embodiment, the defect to be detected 101 includes: pit, scratch or protrusion etc..
In the present embodiment, the material of the wafer 100 is silicon, has semiconductor devices in the wafer 100.At other
In embodiment, can not have semiconductor devices in the wafer.
In the present embodiment, the defect to be detected 101 is multiple, it should be noted that the detection method of the present embodiment
It is to be described in detail for one in multiple defects 101 to be detected, the detection method of remaining defect to be detected is then
It is same.
In other embodiments, the defect to be detected can be 1 or not have.
Referring to FIG. 4, Fig. 4 is the wafer image schematic diagram after Fig. 3 scanning, the defect of the defect 101 to be detected is obtained
Information.
In the present embodiment, the information of the defect to be detected 101 includes: the location information of the defect to be detected 101
With the area information of the defect 101 to be detected.
In the present embodiment, the method for obtaining the location information of the defect 101 to be detected includes: by fault detection machine
Platform (Scan board) is scanned the detection faces of the wafer 100, obtains the defect 101 to be detected in the detection faces
Relative position.
The method for obtaining relative position of the defect to be detected 101 in the detection faces includes: that scanning obtains the crystalline substance
The wafer image 102 of circle 100；Coordinate system is established as origin using the center of the wafer image 102；Obtain the defect to be detected
Coordinate (x1, y1) of the 101 corresponding defect images 103 in the coordinate system.
Specifically, the centre coordinate of the wafer image 102 is (0,0)；The coordinate system includes axis of abscissas x and vertical seat
Parameter y, the axis of abscissas x is vertical with axis of ordinates y, and the axis of abscissas x is parallel to the wafer image 102, described
Axis of ordinates y is parallel to the wafer image 102.
The position coordinates of the defect image 103 include: the abscissa x1 along the axis of abscissas x；Along the reference axis y
Ordinate y1.The abscissa at the center of the defect image 103 is x1, and the ordinate at the center of the defect image is y1,
Then the location information of the defect image 103 is coordinate (x1, y1).
In the present embodiment, it is the scan image schematic diagram of part A in Fig. 4 incorporated by reference to reference Fig. 4 and Fig. 5, Fig. 5, obtains
The method of the area information of the defect to be detected 101 include: by fault detection board to the detection faces of the wafer 100 into
Row scanning obtains wafer image 102, has the corresponding defect image of the defect 101 to be detected in the wafer image 102
103；Pixelation processing is carried out to the wafer image 102, the wafer image 102 is divided into multiple block of pixels 104；To more
A block of pixels 104 is detected, and 104 quantity of block of pixels of the defect image 103 is obtained；According to the defect image
The product of 103 104 quantity of block of pixels and the single block of pixels area, obtains the area information of the defect image 103.
In the present embodiment, incorporated by reference to reference Fig. 3 and Fig. 4, the wafer 100 has multiple chip areas 105 (Die)；
The method for obtaining the wafer image 102 include: by the fault detection board to each chip area 105 successively into
Row Scanning Detction obtains the wafer image 102.
With continued reference to FIG. 4, obtaining shooting amplification factor according to the defect information.
In the present embodiment, shooting is amplified to the defect 101 to be detected by scanning electron microscope (SEM), it is described to sweep
Retouching the method that Electronic Speculum obtains the shooting amplification factor x includes: that defect visual field accounting α and shooting are set in the scanning electron microscope
Field area N (N is definite value for the scanning electron microscope of model of the same race)；It will be described to be detected by the fault detection board
The area information n of defect 101 is transmitted in the scanning electron microscope；The scanning electron microscope information n, defect visual field accounting according to area
α and shooting field area N obtain shooting amplification factor x, the shooting amplification factor x=α N/n.
Wherein, the defect visual field accounting constant α refers to the amplified defect area to be detected and the scanning
The ratio between shooting field area of Electronic Speculum.
The range of the defect visual field accounting constant α is 40%~70%, the defect visual field accounting constant α within the scope of this
The image for the defect 101 to be detected observed is of moderate size, can either the defect 101 to be detected visible in detail
Details, while can guarantee that the image of the defect to be detected 101 is comprehensively apparent in the shooting visual field again.
In the present embodiment, the method that the scanning electron microscope obtains the area information of the defect to be detected 101 includes: institute
It states fault detection board and the area information of acquired defect to be detected 101 is generated into area information file；The fault detection
The area information file is imported the scanning electron microscope by board；The scanning electron microscope identification obtains on the area information file
The defect 101 to be detected area information.
Referring to FIG. 6, Fig. 6 is the detection image by the defect to be detected after bust shot, amplified according to the shooting
Multiple carries out shooting processing to the defect 101 to be detected, obtains detection image 106, the detection image 106 include it is described to
Detect the image of defect 101.
In the present embodiment, the side defect to be detected handled into the shooting of 101 rows according to the shooting amplification factor
Method includes: that the defect 101 to be detected is carried out registration process with the shooting visual field according to the positional information, is made described to be detected
Defect 101 is aligned with the center in the shooting visual field；After carrying out the registration process, according to the shooting amplification factor into
Row shooting.
In the present embodiment, with continued reference to FIG. 4, making the center pair of the defect to be detected 101 with the shooting visual field
Quasi- method includes: to obtain defect image 103 described in the wafer image 102 and the wafer figure by defect checking machine platform
As the offset vector at 102 centersThe offset vectorCoordinate (x1, y1) and the wafer image for the defect image
The difference of 102 centre coordinate (0,0)；When initial, the center of the detection faces of the wafer 100 and the shooting central region pair
Standard, the fault detection board is by the offset vectorIt is transmitted to the scanning electron microscope；The scanning electron microscope is according to described inclined
Move vectorGenerate a compensation vectorThe compensation vectorWith the offset vectorIt offsets, makes the defect to be detected
101 center is aligned with the center in the shooting visual field.
Referring to FIG. 7, correspondingly, the embodiments of the present invention also provide a kind of defects detections formed using the above method
System, comprising:
Information acquisition unit 200, for obtaining the defect information of crystal column surface defect to be detected；
Amplification factor acquiring unit 210, for obtaining shooting amplification factor according to the defect information；
Image acquisition unit 220 is obtained for being shot according to the shooting amplification factor to the defect to be detected
Detection image, the detection image include the image of the amplified defect to be detected.
It is illustrated below with reference to attached drawing.
In the present embodiment, the defect information include: the defect to be detected location information and it is described it is to be detected lack
Sunken area information.
In the present embodiment, with continued reference to FIG. 7, the information acquisition unit 200 includes:
Scan module 201 is scanned for the detection faces to the wafer, obtains wafer image, the wafer image
In there are the corresponding several defect images of several defects to be detected.
The scan module 201 includes fault detection board, by defect checking machine platform to the detection faces of the wafer into
Row scanning, obtains the wafer image of the detection faces.
The wafer image is divided into more by pixelation module 202 for carrying out pixelation processing to the wafer image
A block of pixels.
Detection module 203, for being detected to the multiple block of pixels, obtain each defect image area and
Position.
The detection module 203 obtains the area information of the defect image specifically: right by the detection module 203
Multiple block of pixels are detected, and the pixel number of blocks of the defect image is obtained；According to the block of pixels of the defect image
The product of quantity and the single block of pixels area, obtains the area information of the defect image.
The detection module 203 obtains the location information of the defect image specifically: the detection module 203 by with
The center of the wafer image is that origin establishes coordinate system；The corresponding defect image of the defect to be detected is obtained in the coordinate
Coordinate (x1, y1) in system.
Specifically, the centre coordinate of the wafer image is (0,0)；The coordinate system includes axis of abscissas x and ordinate
Axis y, the axis of abscissas x is vertical with axis of ordinates y, and the axis of abscissas x is parallel to the wafer image, the ordinate
Axis y is parallel to the wafer image.
The location information of the defect to be detected includes: the abscissa x1 along the axis of abscissas x；Along the reference axis y
Ordinate y1.The abscissa at the defect image center is x1, and the ordinate at the defect image center is y1, then described to lack
The location information for falling into image is coordinate (x1, y1).
In the present embodiment, the amplification factor acquiring unit 210 obtains shooting amplification factor specifically: in the scanning
Defect visual field accounting α and shooting field area N are set in Electronic Speculum (N is definite value for the scanning electron microscope of model of the same race)；It is logical
It crosses the fault detection board area information of the defect to be detected is transmitted in the scanning electron microscope；The scanning electron microscope
Information n, defect visual field accounting α and shooting field area N obtain shooting amplification factor x, the shooting amplification factor x according to area
=α N/n.
Wherein, the defect visual field accounting constant α refers to the amplified defect area to be detected and the scanning
The ratio between shooting field area of Electronic Speculum.
In the present embodiment, described image acquiring unit 220 includes:
Alignment modules 221, for according to the positional information carrying out the defect to be detected and the shooting visual field at alignment
Reason is directed at the defect to be detected and the center in the shooting visual field.
Defect image described in the wafer image and the wafer image center are obtained by the defect checking machine platform
Offset vectorThe offset vectorFor the centre coordinate of coordinate (x1, the y1) and the wafer image of the defect image
The difference of (0,0)；When initial, the center of the detection faces of the wafer is aligned with the shooting central region, the fault detection machine
Platform is by the offset vectorIt is transmitted to the scanning electron microscope；The alignment modules are according to the offset vectorGenerate a benefit
Repay vectorThe compensation vectorWith the offset vectorIt offsets, makes the center of the defect to be detected and the shooting
The center in the visual field is aligned.
Shooting module 222, for being shot according to the shooting amplification factor after carrying out the registration process.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (11)
1. a kind of defect inspection method characterized by comprising
Wafer is provided, the wafer includes detection faces, and the detection faces have defect to be detected；
Obtain the defect information of the defect to be detected；
Shooting amplification factor is obtained according to the defect information；
Shooting processing is carried out to the defect to be detected according to the shooting amplification factor, obtains detection image, the detection figure
Image as including the defect to be detected.
2. defect inspection method as described in claim 1, which is characterized in that the defect information includes: described to be detected scarce
The area information of sunken location information and the defect to be detected.
3. defect inspection method as claimed in claim 2, which is characterized in that according to the shooting amplification factor to described to be checked
Surveying the method that defect carries out shooting processing includes: according to the positional information to carry out the defect to be detected and the shooting visual field pair
Quasi- processing is directed at the defect to be detected and the center in the shooting visual field；After carrying out the registration process, according to institute
Shooting amplification factor is stated to be shot.
4. defect inspection method as claimed in claim 2, which is characterized in that obtain the defect information of the defect to be detected
Method includes: to be scanned to the detection faces of the wafer, obtains wafer image, has in the wafer image described to be detected
The corresponding defect image of defect；Pixelation processing is carried out to the wafer image, the wafer image is divided into multiple pixels
Block；The multiple block of pixels is detected, area and the position of the defect image are obtained.
5. defect inspection method as claimed in claim 4, which is characterized in that obtain the method packet of the area of the defect image
It includes: obtaining the pixel number of blocks of the defect image；According to the pixel number of blocks of the defect image and the single block of pixels
The product of area obtains the area information of the defect image.
6. defect inspection method as claimed in claim 2, which is characterized in that obtain shooting times magnification according to the defect information
Several methods includes: to provide shooting field area N and defect visual field accounting constant α；According to the shooting field area N and defect
Visual field accounting constant α obtains shooting amplification factor x=α N/n, and wherein n is the area of the defect to be detected.
7. defect inspection method as claimed in claim 6, which is characterized in that the range of the defect visual field accounting constant α is
40%~70%.
8. a kind of defect detecting system characterized by comprising
Information acquisition unit, for obtaining the defect information of crystal column surface defect to be detected；
Amplification factor acquiring unit, for obtaining shooting amplification factor according to the defect information；
Image acquisition unit obtains detection figure for shooting according to the shooting amplification factor to the defect to be detected
Picture, the detection image include the image of the amplified defect to be detected.
9. defect detecting system as claimed in claim 8, which is characterized in that the defect information includes: described to be detected scarce
The area information of sunken location information and the defect to be detected.
10. defect detecting system as claimed in claim 8, which is characterized in that the information acquisition unit includes: scanning mould
Block is scanned for the detection faces to the wafer, obtains wafer image, has in the wafer image several described to be checked
Survey the corresponding several defect images of defect；
The wafer image is divided into multiple pixels for carrying out pixelation processing to the wafer image by pixelation module
Block；
Detection module obtains area and the position of each defect image for detecting to the multiple block of pixels.
11. defect detecting system as claimed in claim 9, which is characterized in that described image acquiring unit includes: to quasi-mode
Block makes described to be detected scarce for the defect to be detected and the shooting visual field to be carried out registration process according to the positional information
It falls into and is aligned with the center in the shooting visual field；
Shooting module, for being shot according to the shooting amplification factor after carrying out the registration process.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111553897A (en) * | 2020-04-27 | 2020-08-18 | 上海果纳半导体技术有限公司 | Wafer defect detection equipment |
| CN111554591A (en) * | 2020-04-27 | 2020-08-18 | 上海果纳半导体技术有限公司 | Semiconductor chip processing apparatus |
| CN113012098A (en) * | 2021-01-25 | 2021-06-22 | 郑州轻工业大学 | Iron tower angle steel punching defect detection method based on BP neural network |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000200813A (en) * | 1998-10-27 | 2000-07-18 | Hitachi Ltd | Picture automatic collecting device and method thereof |
| US20020024012A1 (en) * | 2000-08-25 | 2002-02-28 | Katsuaki Abe | Electron microscope |
| JP2003133379A (en) * | 2001-10-25 | 2003-05-09 | Hitachi Ltd | Inspection apparatus and manufacturing method of semiconductor device |
| US20070105245A1 (en) * | 2005-11-10 | 2007-05-10 | Hitachi High-Technologies Corporation | Wafer inspection data handling and defect review tool |
| US20110129142A1 (en) * | 2008-08-01 | 2011-06-02 | Hitachi High-Technologies Corporation | Defect review system and method, and program |
| KR20150094118A (en) * | 2014-02-10 | 2015-08-19 | 삼성전자주식회사 | Operating method of review device |
| CN109979840A (en) * | 2019-03-04 | 2019-07-05 | 上海华力集成电路制造有限公司 | The method for monitoring Observation of Defects equipment wafer carrier precision offset amount |
-
2019
- 2019-07-22 CN CN201910662387.XA patent/CN110346394A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000200813A (en) * | 1998-10-27 | 2000-07-18 | Hitachi Ltd | Picture automatic collecting device and method thereof |
| US20020024012A1 (en) * | 2000-08-25 | 2002-02-28 | Katsuaki Abe | Electron microscope |
| JP2003133379A (en) * | 2001-10-25 | 2003-05-09 | Hitachi Ltd | Inspection apparatus and manufacturing method of semiconductor device |
| US20070105245A1 (en) * | 2005-11-10 | 2007-05-10 | Hitachi High-Technologies Corporation | Wafer inspection data handling and defect review tool |
| US20110129142A1 (en) * | 2008-08-01 | 2011-06-02 | Hitachi High-Technologies Corporation | Defect review system and method, and program |
| KR20150094118A (en) * | 2014-02-10 | 2015-08-19 | 삼성전자주식회사 | Operating method of review device |
| CN109979840A (en) * | 2019-03-04 | 2019-07-05 | 上海华力集成电路制造有限公司 | The method for monitoring Observation of Defects equipment wafer carrier precision offset amount |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111553897A (en) * | 2020-04-27 | 2020-08-18 | 上海果纳半导体技术有限公司 | Wafer defect detection equipment |
| CN111554591A (en) * | 2020-04-27 | 2020-08-18 | 上海果纳半导体技术有限公司 | Semiconductor chip processing apparatus |
| CN111553897B (en) * | 2020-04-27 | 2024-03-12 | 上海果纳半导体技术有限公司 | Wafer defect detection equipment |
| CN111554591B (en) * | 2020-04-27 | 2024-03-12 | 上海果纳半导体技术有限公司 | Semiconductor chip processing apparatus |
| CN113012098A (en) * | 2021-01-25 | 2021-06-22 | 郑州轻工业大学 | Iron tower angle steel punching defect detection method based on BP neural network |
| CN113012098B (en) * | 2021-01-25 | 2023-04-07 | 郑州轻工业大学 | Iron tower angle steel punching defect detection method based on BP neural network |
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