CN107863303A - Defect inspection method - Google Patents
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- CN107863303A CN107863303A CN201711065125.2A CN201711065125A CN107863303A CN 107863303 A CN107863303 A CN 107863303A CN 201711065125 A CN201711065125 A CN 201711065125A CN 107863303 A CN107863303 A CN 107863303A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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Abstract
The present invention provides a kind of defect inspection method, including：Obtain the first defective locations of first defect；Obtain the second defective locations of second defect；Shooting processing is carried out to the first defect in the first shot location, the first image is obtained, there is the first defect image position in described first image, the first defect image position correspondence is in the center of first defect；Second offset vector is obtained according to the first defect image position and the first offset vector；Second defective locations are compensated by second offset vector, obtain the second camera site, the vector that second camera site is pointed to from the second defective locations is equal to second offset vector；Shooting processing is carried out to second defect in second shot location, obtains the second image.The defect inspection method can increase the precision of second camera site, so as to make to have the image of second defect in the second image, and then can improve defect and catch success rate.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly to a kind of defect inspection method.
Background technology
During wafer is manufactured, due to making crystal column surface produce a large amount of defects in manufacturing process unavoidably.In order to ensure
The quality of wafer to the defects of crystal column surface, it is necessary to detect.
Existing defect inspection method includes：Wafer is provided, the wafer includes detection faces, and the detection faces have multiple
Defect；Detection faces are scanned by fault detection board, obtain the position coordinates of each defect of detection faces；According to each defect
Position coordinates, shooting processing is carried out to each defect respectively by ESEM (SEM), obtains the image of each defect.Scanning electricity
Mirror is a kind of board for detecting wafer surface defects, has the resolution ratio of very high image, can clearly reflect the pattern of defect.
However, the defects of existing defect inspection method catches, success rate is relatively low, causes the output capacity of detection relatively low.
The content of the invention
The present invention solves the problems, such as to be to provide a kind of defect inspection method, it is possible to increase defect catches success rate, improves inspection
The output capacity of survey.
To solve the above problems, the present invention provides a kind of defect inspection method, including：Wafer is provided, the wafer includes
Detection faces, the detection faces have multiple defects, and the multiple defect includes adjacent the first defect and the second defect；Obtain
First defective locations of first defect；Obtain the second defective locations of second defect；School is carried out to the detection faces
Standard, obtain the first offset vector；The first defective locations are compensated according to first offset vector, first count is obtained and acts as regent
Put, the vector that first camera site is pointed to from the first defective locations is equal to first offset vector；In the first count
Take the photograph opening position and shooting processing is carried out to the first defect, obtain the first image, there is the first defect map image position in described first image
Put, the first defect image position correspondence is in the center of first defect；According to the first defect image position and
One offset vector obtains the second offset vector；Second defective locations are compensated by second offset vector, obtained
The second camera site is taken, the vector that second camera site is pointed to from the second defective locations is equal to second offset vector；
Shooting processing is carried out to second defect in second shot location, obtains the second image.
Optionally, the step of calibration includes：Using the detection faces center as centring, the detection faces are carried out
Shooting is handled, and obtains the first test image, has center image position, the center image position in first test image
It is corresponding with the center of detection faces；The vector that the center image position is pointed to from the first test image center is measured, is obtained
First offset vector.
Optionally, shooting processing is carried out to first defect by ESEM；According to first camera site pair
First defect include the step of shooting processing：The central region of the ESEM is set to be directed at the of the detection faces
Behind one camera site, shooting processing is carried out to first defect；Second defect is carried out at shooting by ESEM
Reason；The step of carrying out shooting processing to second defect according to second camera site includes：Make the ESEM
The second count of the central region alignment detection faces, which acts as regent, to be postponed, and shooting processing is carried out to second defect.
Optionally, the step of obtaining the second offset vector includes：It is obtained from described first image center and points to described first
First displacement of defect image position；Obtain first displacement and the first offset vector sum.
Optionally, the step of obtaining first defective locations and the second defective locations includes：Pass through fault detection board
The detection faces are scanned, obtain first defective locations and the second defective locations.
Optionally, the number of the defect is more than 3；The defects of beyond first defect and the second defect is the 3rd scarce
Fall into；The detection faces include reference zone, and the reference zone is circular, in the 3rd defect center and the reference zone
The heart overlaps；The defects of being handled in the reference zone by the shooting is reference defect, is obtained by the reference defect
Image is reference picture, and the position for carrying out shooting processing to the reference defect is with reference to camera site；The defects detection side
Method also includes：Obtain the 3rd defective locations of the 3rd defect；Institute is obtained according to the reference picture and with reference to camera site
State the reference offset vector of reference defect；Processing is averaged to the reference offset vector, obtains the 3rd offset vector；Root
The 3rd defective locations are compensated according to the 3rd offset vector, acquisition third shot, which acts as regent, puts, from the 3rd defective locations
Point to the third shot vector put that acts as regent and be equal to the 3rd offset vector；Opening position is taken the photograph to the described 3rd in the third shot
Defect carries out shooting processing, obtains the 3rd image.
Optionally, the position in the reference picture corresponding to the reference defect is the second image deflects position；Obtain
The step of reference offset vector, includes：It is obtained from the 3rd defective locations and points to the second with reference to camera site
Move；It is obtained from the triple motion that the second image deflects position is pointed at the reference picture center；Obtain the second displacement
With triple motion sum.
Optionally, the number of the 3rd defect is multiple；The defect inspection method also includes：Acquisition the 3rd is repeated to lack
Position is fallen into the step of carrying out shooting processing to the 3rd defect.
Optionally, the number of the reference defect is one, and the 3rd offset vector is equal to the reference offset vector.
Optionally, the number of the reference defect is multiple；Each reference offset vector includes：Reference offset vector is along first
First component in direction, the first direction is parallel to the detection faces；The second component of reference offset vector in a second direction,
The second direction is parallel to the detection faces, and the second direction is perpendicular to the first direction；The 3rd skew arrow
Amount includes：Three-component of 3rd offset vector along the first direction；3rd offset vector is along the 4th of the second direction
Component；The step of averaging processing to the reference offset vector includes：The average value of multiple first components is obtained, is obtained
Three-component；The average value of multiple second components is obtained, obtains the 4th component.
Compared with prior art, technical scheme has advantages below：
In the defects of technical solution of the present invention provides detection method, second offset vector is according to first defect
What picture position and the first offset vector obtained, i.e., what described second offset vector obtained according to the offset vector of the first defect.
Because second defect and the first defect are neighbouring, second defect and the distance between the first defect are smaller, measurement error
Influence to the first defect and the second defect is close, then the skew arrow of the offset vector of the first defective locations and the second defective locations
Amount is closer to.Therefore, the second defective locations are compensated according to second offset vector, obtains the second camera site, energy
Enough increase the precision of second camera site, so as to make to have in the second image the image of second defect, and then
Defect can be improved and catch success rate.
Brief description of the drawings
The flow chart of each step of the embodiment of the defects of Fig. 1 is present invention detection method one；
The structural representation of each step of embodiment of the defects of Fig. 2 to Fig. 5 is present invention detection method one.
Embodiment
Defect inspection method has a problems, such as defect catches that success rate is relatively low, causes the output capacity of detection relatively low.
The reason for success rate is relatively low is caught in conjunction with a kind of defect inspection method analyzing defect：
The defect inspection method includes：Wafer is provided, the wafer includes detection faces, and the detection faces have multiple lack
Fall into；The position of each defect is obtained by fault detection board；The detection faces center is calibrated, obtains offset vector；
The position of any one defect is compensated according to the offset vector, obtains camera site；By ESEM described
Shot location carries out shooting processing to the defect, obtains image；Repetition obtains the step of the camera site and shooting processing
The rapid image up to obtaining all defect.
Wherein, the step of being calibrated to the detection faces includes：Using the detection faces center as centring, to described
Detection faces carry out shooting processing, obtain test image；Position corresponding to crystal circle center is measured in the test image relative to institute
The displacement at test image center is stated, obtains the offset vector.
Because the fault detection board and the ESEM precision differ, cause the fault detection board with sweeping
There is deviation in the length standard for retouching Electronic Speculum, so that offset vector the defects of at detection faces diverse location differs.However, institute
Stating offset vector is obtained by the detection faces center, and the compensation of the position of each defect is sweared according to same skew
What amount was carried out, so as to cause the camera site after compensation that there is certain error.Therefore, according to the camera site to defect
When carrying out shooting processing, because camera site has error, easily cause do not have the defect in described image.Therefore, institute
It is relatively low that the defects of stating defect inspection method catches success rate.
In order to solve the above problems, the present invention provides a kind of defect inspection method, including：According to the first defect image position
The second offset vector is obtained with the first offset vector；Second defective locations are mended by second offset vector
Repay, obtain the second camera site, the vector that second camera site is pointed to from the second defective locations is equal to the described second skew
Vector；Shooting processing is carried out to second defect in second shot location, obtains the second image.Defect described in root is examined
Survey method can increase the precision of second camera site, so as to make to have the figure of second defect in the second image
Picture, and then defect can be improved and catch success rate
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
The flow chart of each step of the embodiment of the defects of Fig. 1 is present invention detection method one.
In the present embodiment, the defect inspection method includes：
Step S1, there is provided wafer, the wafer include detection faces, and the detection faces have multiple defects, the multiple to lack
Falling into includes adjacent the first defect and the second defect；
Step S2, obtain the first defective locations of first defect；
Step S3, obtain the second defective locations of second defect；
Step S4, the detection faces are calibrated, obtain the first offset vector；
Step S5, the first defective locations are compensated according to first offset vector, obtain the first camera site, from
The vector that first defective locations point to first camera site is equal to first offset vector；
Step S6, shooting processing is carried out to the first defect in first shot location, obtain the first image, described the
There is the first defect image position, the first defect image position correspondence is in the center of first defect in one image；
Step S7, the second offset vector is obtained according to the first defect image position and the first offset vector；
Step S8, second defective locations are compensated by second offset vector, obtain second count and act as regent
Put, the vector that second camera site is pointed to from the second defective locations is equal to second offset vector；
Step S9, shooting processing is carried out to second defect in second shot location, obtains the second image.
The defect detection procedure is described in detail below in conjunction with accompanying drawing.
The structural representation of each step of embodiment of the defects of Fig. 2 to Fig. 5 is present invention detection method one.
It refer to Fig. 2, there is provided wafer 100, the wafer 100 include detection faces, and the detection faces have multiple defects, institute
Stating multiple defects includes adjacent the first defect 101 and the second defect 102.
The wafer 100 is used to form semiconductor structure.During the wafer 100 is formed, make the inspection unavoidably
It is defective to survey mask.The defect includes：Pit, cut or protrusion etc..
In the present embodiment, the material of the wafer 100 is silicon, has semiconductor devices in the wafer 100.In other realities
Apply in example, can not have semiconductor devices in the wafer.
In the present embodiment, the number of the defect is more than or equal to 3.The number of first defect 101 is one, described
The number of second defect 102 is one, is the 3rd defect 103 the defects of outside the defect 102 of the first defect 101 and second.
In other embodiments, first defect and the second defect are only included the defects of the detection faces.
In the present embodiment, the number of the 3rd defect 103 is multiple.In other embodiments, the 3rd defect
Number can be 1.
Continuing with reference to figure 2, the first defective locations of acquisition first defect 101；Obtain second defect 102
The second defective locations.
In the present embodiment, the detection faces are scanned by fault detection board, obtain first defective locations
With the second defective locations.
The step of obtaining first defective locations and the second defective locations includes：Built using the detection faces center as origin
Vertical first coordinate system, first coordinate system include the first axis of abscissas x and the first axis of ordinates y, the first axis of abscissas x
It is vertical with the first axis of ordinates y, and the first axis of abscissas x is parallel parallel to the detection faces, the first axis of ordinates y
In the detection faces.
First defective locations include：Along the first abscissa of the first axis of abscissas x；Along first ordinate
Axle y the first ordinate；Second defective locations include：Along the second abscissa of the first axis of abscissas x；Along described
One axis of ordinates y the second ordinate.
First abscissa is x1, and first ordinate is y1, then the coordinate of first defective locations for (x1,
y1)；Second abscissa is x2, and second ordinate is y2, then the second defective locations coordinate is (x2, y2).
Position centered on the position at the detection faces center.In the present embodiment, the coordinate of the center is (0,0).
With reference to reference to figure 3, the detection faces are calibrated, obtain the first offset vector
First offset vectorFor subsequently being compensated to first defective locations, so as to obtain the first shooting
Position, realize the shooting processing to the first defect 101.
The step of being calibrated to the wafer 100 includes：Using the center as centring, to the detection faces
Shooting processing is carried out, the first test image 110 is obtained, there is center image position in first test image 110, in described
Heart picture position is corresponding with the center of detection faces；Measure from the center of first test image 110 and point to the center image
The vector of position, obtain first offset vector
In other embodiments, the step of being calibrated to the detection faces includes：Using first defective locations as pair
True centric, the detection faces are carried out with shooting processing, obtain the second test image, measure from the center of second test image
The displacement of the picture centre of the first defect described in the second test image is pointed to, obtains first offset vector.Or to institute
Stating the step of detection faces are calibrated includes：Using second defective locations as centring, the detection faces are shot
Processing, the 3rd test image is obtained, measure the 3rd test image center and point to the second defect described in the 3rd test image
Picture centre displacement, obtain first offset vector.
In the present embodiment, the step of pointing to the vector of the center image position from the first test image center is measured
Including：The second coordinate system is established by origin of the center of first test image 110, it is horizontal that second coordinate system includes second
Reference axis x0 and the second axis of ordinates y0, the second axis of abscissas x0 and the second axis of ordinates y0 are mutually perpendicular to, the second horizontal seat
Parameter x0 is parallel to first test image, and the second axis of ordinates y0 is parallel to first test image, to institute
Detection faces are stated to carry out in shooting processing procedure, the second axis of abscissas x0 is parallel with the first axis of abscissas x and positive direction is identical,
The second axis of ordinates y2 is parallel with the first axis of ordinates y and positive direction is identical.
First offset vectorCoordinate in second coordinate system is (x10, y10).
With reference to referring to figs. 2 and 3 according to first offset vectorFirst defective locations are compensated, obtain the
One camera site, the displacement that first camera site is pointed to from the first defective locations are equal to first offset vector
First defective locations, which are compensated, can make the precision of the first camera site be more than the first defective locations, so as to
Enough images for making there is first defect 101 in described first image in follow-up shooting processing, it is scarce so as to improve
Trapping takes success rate.
In the present embodiment, due to the ESEM formed image for stand upside down picture, the first axis of abscissas x0 with
Second axis of abscissas is parallel and positive direction is identical, and the first axis of ordinates x is parallel with the second axis of ordinates x0 and positive direction phase
Together.The step of being compensated to the first defective locations includes：The first defective locations coordinate is obtained to swear with the described first skew
AmountSum.
Specifically, in the present embodiment, the coordinates of first defective locations is (x1, y1), first offset vector
Coordinate be (x10, y10), then coordinate of first camera site in first coordinate system is (x1+x10, y1+
y10)。
Fig. 4 is refer to, shooting processing is carried out to the first defect 101 (as shown in Figure 2) in first shot location, obtained
The first image 121 is taken, there is the first defect image position, the first defect image position correspondence in described first image 121
In the center of first defect 101.
In the present embodiment, shooting processing is carried out to first defect 101 by ESEM.The resolution ratio of ESEM
It is higher, the type and size of first defect 101 can be judged by the first captured image 121.
Include the step of first shot location carries out shooting processing to first defect 101：Make described sweep
Retouch Electronic Speculum central region and be directed at first camera site, shooting processing is carried out to first defect 101.
In the present embodiment, described first image 121 is obtained with first test image 110 by ESEM, institute
Coordinate system where stating the first image 121 is identical with the coordinate system of first test image 110.
Continuing with reference to figure 4, according to the first defect image position and the first offset vectorObtain the second skew
Vector.
Second offset vector is used to subsequently compensate second defective locations, is acted as regent so as to obtain second count
Put.
In the present embodiment, the step of obtaining second offset vector includes：Obtain described first image defective locations
Relative to first displacement at the center of described first image 121Calculate first displacementWith first offset vector
Sum, obtain second offset vector.
Specifically, in the present embodiment, first displacementSecond offset vector isThen coordinate of second offset vector in first coordinate system is (x10+x11, y10+y11).
The second defective locations are compensated by second offset vector, obtain the second camera site, from described the
The displacement that one defective locations point to second camera site is equal to second offset vector.
Second offset vector is sweared by the first defect 101 calibrate the skew of the first defective locations of acquisition
Amount.Because second defect 102 and the first defect 101 are neighbouring, then the offset vector of second defective locations and second inclined
Move vector to approach, therefore, the second defective locations compensated according to second offset vector, obtain the second camera site,
The precision of second camera site can be increased, so as to make there is second defect 102 in follow-up second image
Image, and then defect capture success rate can be improved.
In the present embodiment, because the image that the ESEM is formed is the picture to stand upside down, the first axis of abscissas x and the
Two axis of abscissas x0 are parallel and positive direction is identical, and the first axis of ordinates x is parallel with the second axis of ordinates x0 and positive direction phase
Together, then the coordinate of second camera site is equal to the coordinate and the second offset vector sum of second defective locations.Specifically
, second defective locations are relative to the position vector at the detection faces center(as shown in Figure 2), first skew
Vector isFirst displacement isThe displacement of the detection faces center to second camera site isThen
Specifically,Then
With reference to reference to figure 5, second defect 102 (as shown in Figure 2) is shot in second shot location
Processing, obtain the second image 120.
It should be noted that have because the precision of second camera site is higher, in second image 120 described
The probability of the image of second defect 102 is larger, thus second defect 102 to be captured as power higher.
In the present embodiment, shooting processing is carried out to second defect 102 by ESEM.Second image 120
The coordinate system at place is the second coordinate system.
Include the step of second shot location carries out shooting processing to second defect 102：Make described sweep
The central region for retouching Electronic Speculum is directed at the second camera site of the detection faces, and shooting processing is carried out to second defect 102.
In the present embodiment, the number of the defect is more than 3；The defects of beyond the defect 102 of first defect 101 and second
For the 3rd defect 103；The detection faces include reference zone, and the reference zone is circle, the center of the 3rd defect 103 with
The reference zone center superposition；The defects of being handled in the reference zone by the shooting is reference defect, by described
The image that reference defect obtains is reference picture, and the position for carrying out shooting processing to the reference defect is with reference to camera site；
Position in the reference picture corresponding to the reference defect is reference defect position.
The defect inspection method also includes：Obtain the 3rd defective locations of the 3rd defect；According to the reference chart
Picture and the reference offset vector that the reference defect is obtained with reference to camera site；Place is averaged to the reference offset vector
Reason, obtain the 3rd offset vector；The 3rd defective locations are compensated according to the 3rd offset vector, third shot is obtained and acts as regent
Put, the vector put that acted as regent from the 3rd defective locations sensing third shot is equal to the 3rd offset vector；Described
Three shot locations carry out shooting processing to the 3rd defect, obtain the 3rd image.
In the present embodiment, the position in the reference picture corresponding to the reference defect is the second image deflects position；
The step of obtaining the reference offset vector includes：Be obtained from the 3rd defective locations point to it is described with reference to the of camera site
Two displacements；It is obtained from the triple motion that the second image deflects position is pointed at the reference picture center；Obtain described second
Displacement and triple motion sum.
If the radius of the reference zone is excessive, easily make part reference defect apart from the 3rd defect 103 too far.
Due to the reference defect of the defect 103 of distance the 3rd farther out shooting processing in offset vector and the 3rd defect 103 at shooting
Offset vector during reason has relatively large deviation, therefore the radius of the reference zone is excessive, is easily reduced described with reference to inclined
Move the precision of vector.If the radius of the reference zone is too small, the number of the reference defect is less, then the reference picture
It is larger to obtain the probability of failure, so as to easily cause the detection unsuccessful.The reference zone is so that the reference defect is 2
It is individual~4 be advisable.Specifically, in the present embodiment, the reference defect number is 3.
In the present embodiment, the reference offset vector includes：The the first component offset of offset vector in the first direction, institute
First direction is stated parallel to the detection faces；The second component offset of offset vector in a second direction, the second direction are put down
Row is in the detection faces, and the second direction is perpendicular to the first direction；3rd offset vector includes：3rd skew
Three-component of the vector along the first direction；Fourth component of 3rd offset vector along the second direction.
In the present embodiment, each first direction it is identical and with the positive direction phase of the first axis of abscissas x (as shown in Figure 2)
Together, each second direction is identical, and identical with the first axis of ordinates y (as shown in Figure 2) positive direction.
The step of averaging processing to the reference offset vector includes：Obtain the flat of multiple first component offsets
Average, obtain three-component；The average value of multiple second component offsets is obtained, obtains the 4th component.
In other embodiments, the number of the reference defect is one, and the 3rd offset vector is equal to the reference
Offset vector.
In the present embodiment, the number of the 3rd defect 103 is multiple, and the forming method also includes：Repeat to obtain the
Three defective locations are to the step of shooting is handled is carried out to the 3rd defect 103, until obtaining the 3rd of all 3rd defects 103
Image 120.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, this is not being departed from
In the spirit and scope of invention, it can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
The scope of restriction is defined.
Claims (10)
- A kind of 1. defect inspection method, it is characterised in that including：Wafer is provided, the wafer includes detection faces, and the detection faces have multiple defects, and the multiple defect includes adjacent The first defect and the second defect；Obtain the first defective locations of first defect；Obtain the second defective locations of second defect；The detection faces are calibrated, obtain the first offset vector；The first defective locations are compensated according to first offset vector, the first camera site are obtained, from the first defective bit Put and point to the vector of first camera site and be equal to first offset vector；Shooting processing is carried out to the first defect in first shot location, the first image is obtained, has in described first image There is the first defect image position, the first defect image position correspondence is in the center of first defect；Second offset vector is obtained according to the first defect image position and the first offset vector；Second defective locations are compensated by second offset vector, obtain the second camera site, are lacked from second The vector for falling into position sensing second camera site is equal to second offset vector；Shooting processing is carried out to second defect in second shot location, obtains the second image.
- 2. defect inspection method as claimed in claim 1, it is characterised in that include the step of the calibration：With the detection Face center is centring, and the detection faces are carried out with shooting processing, obtains the first test image, in first test image With center image position, the center image position is corresponding with the center of detection faces；Measurement is from first test image The heart points to the vector of the center image position, obtains first offset vector.
- 3. defect inspection method as claimed in claim 1, it is characterised in that carried out by ESEM to first defect Shooting is handled；The step of carrying out shooting processing to first defect according to first camera site includes：Make the scanning The first count of the central region alignment detection faces of Electronic Speculum, which acts as regent, to be postponed, and shooting processing is carried out to first defect；Shooting processing is carried out to second defect by ESEM；According to second camera site to second defect The step of carrying out shooting processing includes：The central region of the ESEM is set to be directed at the second camera site of the detection faces Afterwards, shooting processing is carried out to second defect.
- 4. defect inspection method as claimed in claim 1, it is characterised in that the step of obtaining the second offset vector includes：Obtain It is derived from the first displacement that the first defect image position is pointed at described first image center；Obtain first displacement with it is described First offset vector sum.
- 5. defect inspection method as claimed in claim 1, it is characterised in that obtain first defective locations and the second defect The step of position, includes：The detection faces are scanned by fault detection board, obtain first defective locations and the Two defective locations.
- 6. defect inspection method as claimed in claim 1, it is characterised in that the number of the defect is more than 3；Described first lacks The defects of falling into beyond the second defect is the 3rd defect；The detection faces include reference zone, and the reference zone is circular, institute State the 3rd defect center and the reference zone center superposition；By being ginseng the defects of the shooting processing in the reference zone Defect is examined, the image obtained by the reference defect is reference picture, to the reference defect shoot the position of processing For with reference to camera site；The defect inspection method also includes：Obtain the 3rd defective locations of the 3rd defect；According to the reference picture and The reference offset vector of the reference defect is obtained with reference to camera site；Processing is averaged to the reference offset vector, Obtain the 3rd offset vector；The 3rd defective locations are compensated according to the 3rd offset vector, acquisition third shot, which acts as regent, puts, The vector put that acted as regent from the 3rd defective locations sensing third shot is equal to the 3rd offset vector；In the third shot Take the photograph opening position and shooting processing is carried out to the 3rd defect, obtain the 3rd image.
- 7. defect inspection method as claimed in claim 6, it is characterised in that correspond in the reference picture described with reference to scarce Sunken position is the second image deflects position；The step of obtaining the reference offset vector includes：It is obtained from the 3rd defect Point to the second displacement with reference to camera site in position；It is obtained from the reference picture center and points to second image deflects The triple motion of position；Obtain the second displacement and triple motion sum.
- 8. defect inspection method as claimed in claim 6, it is characterised in that the number of the 3rd defect is multiple；It is described Defect inspection method also includes：Repeat to obtain the 3rd defective locations to the step of carrying out shooting processing to the 3rd defect.
- 9. defect inspection method as claimed in claim 6, it is characterised in that the number of the reference defect is one, described 3rd offset vector is equal to the reference offset vector.
- 10. defect inspection method as claimed in claim 6, it is characterised in that the number of the reference defect is multiple；Each ginseng Examining offset vector includes：The first component of reference offset vector in the first direction, the first direction is parallel to the detection faces； The second component of reference offset vector in a second direction, the second direction is parallel to the detection faces, and the second direction Perpendicular to the first direction；3rd offset vector includes：Three-component of 3rd offset vector along the first direction；3rd offset vector edge 4th component of the second direction；The step of averaging processing to the reference offset vector includes：The average value of multiple first components is obtained, is obtained Three-component；The average value of multiple second components is obtained, obtains the 4th component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711065125.2A CN107863303A (en) | 2017-11-02 | 2017-11-02 | Defect inspection method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711065125.2A CN107863303A (en) | 2017-11-02 | 2017-11-02 | Defect inspection method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107863303A true CN107863303A (en) | 2018-03-30 |
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| CN110034034A (en) * | 2019-03-04 | 2019-07-19 | 上海华力集成电路制造有限公司 | The compensation method of Observation of Defects equipment wafer carrier precision offset |
| WO2022134304A1 (en) * | 2020-12-22 | 2022-06-30 | 东方晶源微电子科技（北京）有限公司 | Defect detection model training method and defect detection method and apparatus and device |
| CN114798479A (en) * | 2022-03-09 | 2022-07-29 | 深圳宏芯宇电子股份有限公司 | Bare chip screening method, device, equipment and storage medium |
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