CN107833841A - Defect inspection method - Google Patents
Defect inspection method Download PDFInfo
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- CN107833841A CN107833841A CN201711027200.6A CN201711027200A CN107833841A CN 107833841 A CN107833841 A CN 107833841A CN 201711027200 A CN201711027200 A CN 201711027200A CN 107833841 A CN107833841 A CN 107833841A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
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Abstract
The present invention provides a kind of defect inspection method, including：Processing is compared to the first half-tone information and the second half-tone information, if second half-tone information mismatches with first half-tone information, when optimizing the position to be measured and repeating second image acquisition step to second half-tone information and matched with first half-tone information, second image is obtained.The relatively processing can interpolate that the image for whether including the pending defect in second image, so as to prevent because measurement error causes the image without the pending defect in second image.Therefore, the detection method can improve defect and catch success rate.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly to a kind of defect inspection method.
Background technology
During wafer is manufactured, due to making crystal column surface produce a large amount of defects in manufacturing process unavoidably.In order to ensure
The quality of wafer to the defects of crystal column surface, it is necessary to detect.
Existing defect inspection method includes：Crystal column surface is scanned by defect checking machine platform, obtains wafer table
The position coordinates of each defect in face；According to the position coordinates of each defect, each defect is clapped respectively by ESEM (SEM)
Take the photograph, obtain the image of each defect.ESEM is a kind of board for detecting wafer surface defects, has the resolution of very high image
Rate, it can clearly reflect the pattern of defect.
However, the defects of existing defect inspection method seizure success rate is relatively low.
The content of the invention
The present invention solves the problems, such as to be to provide a kind of defect inspection method, it is possible to increase defect catches success rate.
To solve the above problems, the present invention provides a kind of defect inspection method, including：Wafer is provided, the wafer includes
Detection faces, the detection faces have pending defect；Using the first image acquisition and processing, the first figure of the detection faces is obtained
Picture, the first defect image corresponding with the pending defect is included in described first image, and first defect image includes
Multiple first pixels；The first half-tone information of first defect image is obtained, first half-tone information includes multiple first
Grey scale pixel value, each first grey scale pixel value are corresponding with each first pixel respectively；The pending defect is obtained relative to inspection
The position to be measured in survey face；The second image acquisition and processing is carried out in the opening position to be measured, obtains the detection faces described to be measured
Second image of opening position, the second image include multiple second pixels, in second image number of the second pixel be more than or
Equal to the number of the first pixel in described first image；Obtain the second half-tone information of second image, second gray scale
Information includes multiple second grey scale pixel values, and each second grey scale pixel value is corresponding with each second pixel respectively；To described first
Half-tone information and the second half-tone information are compared processing, when second half-tone information and the first half-tone information mismatch,
The position to be measured is optimized, obtains and resets position；The second image acquisition and processing step is repeated in the replacement opening position
To processing step is compared, until second half-tone information matches with first half-tone information.
Optionally, the step of second image acquisition and processing includes：The detection faces are entered by defect checking machine platform
Row scanning, obtain the first image of the detection faces.
Optionally, the step of second image acquisition and processing includes：By ESEM to the opening position to be measured
Detection faces are shot, and obtain second image.
Optionally, described the step of relatively handling, includes：Contrast processing is carried out, the contrast processing includes：Described
Obtain contrast district in two images, the number of the second pixel and the first pixel in first defect image in the contrast district
It is identical with distribution；The gray scale of each second pixel and the first pixel in corresponding first defect image in the contrast district are obtained respectively
Gray scale between ratio；Whether more each ratio is identical.
Optionally, the detection faces have multiple defects, have the pending defect in multiple defects；Described
Two images include the second defect image, and second defect image is corresponding with the defect.
Optionally, when second image includes second defect image, obtain contrast district the step of include：Make
The contrast district includes second defect image.
Optionally, when second image includes multiple second defect images corresponding with multiple defects, the contrast
The number in region is identical with the number of second defect image；The step of obtaining contrast district includes：Make each contrast district point
Bao Kuo not second defect image；Described the step of relatively handling, also includes：If each ratio has differences, the ratio is repeated
Compared with processing step.
Optionally, there is semiconductor devices in the wafer.
Optionally, the step of position to be measured for obtaining the pending defect, includes：Existed using the crystal circle center as origin
The detection faces establish coordinate system；The position to be measured includes the pending defect coordinate value under the coordinate system.
Optionally, the step of optimizing the position to be measured includes：Change the coordinate value of the position to be measured.
Compared with prior art, technical scheme has advantages below：
In the defects of technical solution of the present invention provides detection method, first half-tone information and the second half-tone information are entered
Row is relatively handled.The relatively processing can interpolate that described the by the comparison to the first half-tone information and the second half-tone information
Whether the image of the pending defect is included in two images, so as to prevent because detection error causes second image
In do not have the pending defect image.Therefore, the detection method can improve defect and catch success rate.
Brief description of the drawings
The flow chart of each step of the embodiment of the defects of Fig. 1 is present invention detection method one；
The structural representation of each step of embodiment of the defects of Fig. 2 to Fig. 5 is present invention detection method one.
Embodiment
Defect inspection method has a problems, such as to catch success rate relatively low for defect.
The defects of analyzing the defect inspection method in conjunction with a kind of defect inspection method catches the reason for success rate is relatively low：
The defect inspection method includes：Wafer is provided, the wafer includes detection faces, and the detection faces have multiple lack
Fall into, there is pending defect in the multiple defect；Detection faces are scanned by defect checking machine platform, wait to locate described in acquisition
Manage the position coordinates of defect；By ESEM (SEM) to being shot at the position coordinates of the pending defect, obtain and lack
Fall into image.
However, due to the influence of defect checking machine platform precision, the position coordinates of the pending defect of acquisition has necessarily partially
Difference, and due to the limitation of the ESEM precision, during being shot by ESEM, easily cause the defect
The defects of image corresponds to differs with the pending defect.Therefore, it is relatively low that success rate is caught the defects of the detection method.
In order to solve the above problems, the present invention provides a kind of defect inspection method, including：To the first half-tone information and second
Half-tone information is compared processing, if second half-tone information mismatches with first half-tone information, is treated described in optimization
When location is put and repeats second image acquisition step to second half-tone information and matched with first half-tone information, obtain
Take second image.The relatively processing can interpolate that the figure for whether including the pending defect in second image
Picture.Therefore, the detection method can improve defect and catch success rate, so as to improve the output capacity of detection.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
The flow chart of each step of the embodiment of the defects of Fig. 1 is present invention detection method one.
In the present embodiment, the defect inspection method includes：
Step S1, there is provided wafer, the wafer include detection faces, and the detection faces have pending defect；
Step S2, using the first image acquisition and processing, the first image of the detection faces is obtained, is wrapped in described first image
The first defect image corresponding with the pending defect is included, first defect image includes multiple first pixels；
Step S3, obtains the first half-tone information of first defect image, and first half-tone information includes multiple the
One grey scale pixel value, each first grey scale pixel value are corresponding with each first pixel respectively；
Step S4, obtain to be measured position of the pending defect relative to detection faces；
Step S5, the second image acquisition and processing is carried out in the opening position to be measured, obtains the detection faces described to be measured
Second image of opening position, the second image include multiple second pixels, in second image number of the second pixel be more than or
Equal to the number of the first pixel in described first image；
Step S6, obtains the second half-tone information of second image, and second half-tone information includes multiple second pictures
Plain gray value, each second grey scale pixel value are corresponding with each second pixel respectively；
Step S7, processing is compared to first half-tone information and the second half-tone information, when second gray scale is believed
When breath mismatches with the first half-tone information, step S8 is performed, the position to be measured is optimized, obtained and reset position；Institute
State and reset opening position and repeat the second image acquisition and processing step to comparing processing step, until second half-tone information with it is described
First half-tone information matches.
The structural representation of each step of embodiment of the defects of Fig. 2 to Fig. 5 is present invention detection method one.
The defect inspection method is described in detail below according to Fig. 2 to Fig. 5.
Fig. 2 is refer to, performs step S1, there is provided wafer, the wafer include detection faces 100, and the detection faces 100 have
Pending defect 101.
The wafer is used to form semiconductor structure.During the wafer is formed, make the detection faces 100 unavoidably
With defect.The defect includes：Pit, cut or protrusion etc..
In the present embodiment, the material of the wafer is silicon, has semiconductor devices in the wafer.In other embodiment
In, can not have semiconductor devices in the wafer.
In the present embodiment, the number of the defect of detection faces 100 is multiple, the defects of needing to be detected in multiple defects
For pending defect 101.In other embodiments, the number of the detection planar defect can be 1.
It refer to Fig. 3, perform step S2, using the first image acquisition and processing, obtain the first image of the detection faces 100
110, first defect image 111 corresponding with the pending defect 101 is included in described first image 110, described first lacks
Falling into image 111 includes multiple first pixels.
The step of obtaining described first image 110 includes：The detection faces 100 are swept by defect checking machine platform
Retouch, obtain the first image 110 of the detection faces 100.
Defect checking machine platform can be scanned to whole detection faces 100, entirely be detected so as to obtain the wafer
First image 110 in face 100.
Because the resolution ratio of the defect checking machine platform is relatively low, in described first image 110 with the pending defect 101
Corresponding fogging image, it is difficult to which the pending defect 101 is judged and analyzed by described first image 110.Cause
This is, it is necessary to subsequently obtain the second image 120 of the pending defect 101.
Step S3, obtains the first half-tone information of first defect image 111, and first half-tone information includes multiple
First grey scale pixel value, each first grey scale pixel value are corresponding with first pixel respectively.
First half-tone information is used to handle subsequently compared with the second half-tone information, so as to judge that the second image is
The no image for the pending defect 101 (as shown in Figure 2).
In the present embodiment, when obtaining first defect image 111 by defect checking machine platform, the defect inspection machine
Platform can position to the pending defect 101, so as to obtain the position to be measured of the pending defect 101, so as to root
According to the first defect image 111 in the position acquisition described first image 110 to be measured of the pending defect 101.
Fig. 4 is refer to, performs step S4, obtains the position to be measured of the pending defect 101.
The position to be measured is used for the position for determining the pending defect 101, so as to wait to locate as described in follow-up obtain
Manage the foundation of the second image of defect 101.
The step of position to be measured for obtaining the pending defect 101, includes：It is origin described using the crystal circle center
Coordinate system is established in detection faces 100；The position to be measured includes the pending defect 101 coordinate under the coordinate system
Value.
Specifically, in the present embodiment, the coordinate system includes the first reference axis x and the second reference axis y, first coordinate
Axle x is vertical with the second reference axis y.
The position to be measured includes：The pending defect 101 is in the first coordinate value x1 along the first reference axis x；It is described
Second coordinate value y1 of the pending defect 101 along the second coordinate y.
In the present embodiment, the coordinate system is rectangular coordinate system.In other embodiments, the coordinate system can also pole seat
Mark system.
In the present embodiment, the detection faces 100 are scanned by the defect checking machine platform, obtained described pending
First coordinate value x1 and second coordinate value y1 of the defect in the coordinate system.
It refer to Fig. 5, perform step S5, the acquisition process of the second image 120 is carried out in the opening position to be measured, described in acquisition
For detection faces 100 (as shown in Figure 4) in the second image 120 of the opening position to be measured, the second image 120 includes multiple second pictures
Element, the number of the second pixel is more than or equal to the number of the first pixel in described first image 110 in second image 120.
In the present embodiment, obtain 120 information of the second image the step of include：Location is treated to described by ESEM
The place of putting is shot, and obtains second image 120.
The step of being shot by ESEM to the opening position to be measured includes：Make described in the ESEM alignment
The opening position to be measured of detection faces 100 is shot.
It should be noted that the limitation of the precision due to the defect checking machine platform, easily causes the position tool to be measured
There is certain error, the ESEM also has error in addition, so as to easily cause do not have institute in second image 120
State pending defect 101 (as shown in Figure 4).Therefore, it is follow-up need by compare processing judge second image 120 whether be
The image of the pending defect 101.
The optical property of the ESEM is preferable, and second image 120 of acquisition is more visible, can pass through described
Two images 120 obtain the information such as type and the size of the pending defect.
In the present embodiment, second image 120 includes one or more second defect images 121, second defect
The defects of image 121 is with detection faces 100 are corresponding.The forming method is used to determine whether second defect image 121 is institute
State the image of pending defect 101.In other embodiments, second image can not also include the second defect image.
Step S6 is performed, obtains the second half-tone information of second image 120, second half-tone information includes multiple
Second grey scale pixel value, each second grey scale pixel value are corresponding with each second pixel respectively.
In the present embodiment, obtain second half-tone information the step of include：Respectively calculate with it is each in the second image 120
Second grey scale pixel value of the second image 120 corresponding to individual second pixel.
In other embodiments, second image 120 includes one or more second defect images 121.Obtain institute
The step of stating the second half-tone information includes：The gray value of each second pixel in second defect image 121 is calculated respectively.
Step S7 is performed, processing is compared to first half-tone information and the second half-tone information, when the described second ash
When spending information with the first half-tone information mismatch, step S8 is performed, the position to be measured is optimized, obtains and resets position；
The acquisition process step of the second image 120 is repeated to processing step is compared in the replacement opening position, until second gray scale is believed
Breath matches with first half-tone information.
Described the step of relatively handling, includes：Contrast processing is carried out, the contrast processing includes：In second image
Obtain contrast district in 120, the number of the second pixel and the first pixel in first defect image 111 in the contrast district
It is identical with distribution；The gray scale of each second pixel and in corresponding first defect image 111 first in the contrast district is obtained respectively
Ratio between the gray scale of pixel；Whether more each ratio is identical.
In the present embodiment, if each ratio is identical, second half-tone information matches with the first half-tone information,
Obtain the comparison domain.Now the comparison domain is the image of the pending defect 101.
In the present embodiment, the number of the comparison domain is multiple.Described the step of relatively handling, includes：It is if described each
Individual ratio has differences, and repeats the contrast processing until all comparison domains are handled by contrast.
When each second pixel grey scale in some comparison domain and corresponding first pixel grey scale in corresponding first defect image 111
Ratio all same when, then the comparison domain be the pending defect 101 image.When each second picture in all comparison domains
When the ratio of the gray scale of corresponding in the first defect image 111 first pixel of element has differences, in the comparison domain without with
The image of the pending defect 101.
In other embodiments, the number of the defect is multiple that second image includes second defect map
Picture；The step of obtaining contrast district includes：The contrast district is set to include second defect image.Or the defect
Number is multiple, and second image includes multiple second defect images corresponding with multiple defects；The contrast district
Number is identical with the number of second defect image；The step of obtaining contrast district includes：Each contrast district is set to include respectively
One the second defect image；Described the step of relatively handling, also includes：If each ratio has differences, repeat at the contrast
Reason.
The step of optimizing the position to be measured includes：Change the coordinate value of the position to be measured.
Specifically, in the present embodiment, in the first coordinate value x1 and the second coordinate value y1 by changing the position to be measured
One of or both combination, change the coordinate value of the position to be measured.
In the present embodiment, the coordinate for resetting position in the coordinate system includes：Along the first reference axis x the first weight
Put coordinate value；Coordinate value is reset along the second of the second reference axis y.
Include specifically, in the present embodiment, the step of the coordinate value for changing the position to be measured：Make first coordinate value
X1 is subtracted or plus the first error amount, is obtained first and reset coordinate value；The second coordinate value y1 is set to reduce or be missed plus second
Difference, obtain second and reset coordinate value.
In the present embodiment, first error amount is the pending radius of defect 101, and second error amount lacks to be pending
Fall into 101 radiuses.In other embodiments, first error amount and the second error amount can be other values.
In other embodiments, the error of the position to be measured may be caused by the vibration of operational error or operating platform,
The step of then optimizing the position to be measured includes：Optimize operating environment, the position coordinates of the pending defect measured,
Obtain the position to be measured.
It should be noted that in the present embodiment, the number of the pending defect is multiple.The detection method is also wrapped
Include：The step of repeating second image acquisition and processing to obtain defect 101 to be handled the second image 120.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, this is not being departed from
In the spirit and scope of invention, it can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
The scope of restriction is defined.
Claims (10)
- A kind of 1. defect inspection method, it is characterised in that including：Wafer is provided, the wafer includes detection faces, and the detection faces have pending defect；Using the first image acquisition and processing, the first image of the detection faces is obtained, described first image is interior to be included treating with described The first defect image corresponding to defect is handled, first defect image includes multiple first pixels；The first half-tone information of first defect image is obtained, first half-tone information includes multiple first pixel grey scales Value, each first grey scale pixel value are corresponding with each first pixel respectively；Obtain to be measured position of the pending defect relative to detection faces；The second image acquisition and processing is carried out in the opening position to be measured, obtains the detection faces the second of the opening position to be measured Image, the second image include multiple second pixels, and the number of the second pixel is more than or equal to described first in second image The number of first pixel in image；The second half-tone information of second image is obtained, second half-tone information includes multiple second grey scale pixel values, respectively Individual second grey scale pixel value is corresponding with each second pixel respectively；Processing is compared to first half-tone information and the second half-tone information, when second half-tone information and the first gray scale When information mismatches, the position to be measured is optimized, obtains and resets position；The second image acquisition and processing step is repeated to processing step is compared in the replacement opening position, until second gray scale is believed Breath matches with first half-tone information.
- 2. defect inspection method as claimed in claim 1, it is characterised in that wrap the step of second image acquisition and processing Include：The detection faces are scanned by defect checking machine platform, obtain the first image of the detection faces.
- 3. defect inspection method as claimed in claim 1, it is characterised in that wrap the step of second image acquisition and processing Include：The detection faces of the opening position to be measured are shot by ESEM, obtain second image.
- 4. defect inspection method as claimed in claim 1, it is characterised in that described the step of relatively handling includes：Carry out pair Than processing, the contrast processing includes：Obtain contrast district in second image, in the contrast district the second pixel with The number of the first pixel is identical with distribution in first defect image；Each second pixel in the contrast district is obtained respectively Ratio in gray scale and corresponding first defect image between the gray scale of the first pixel；Whether more each ratio is identical.
- 5. defect inspection method as claimed in claim 4, it is characterised in that the detection faces have multiple defects, Duo Gesuo Stating has the pending defect in defect；Second image includes the second defect image, second defect image with The defect is corresponding.
- 6. defect inspection method as claimed in claim 5, it is characterised in that second image includes second defect During image, obtain contrast district the step of include：The contrast district is set to include second defect image.
- 7. defect inspection method as claimed in claim 5, it is characterised in that second image includes and multiple defects pair During multiple second defect images answered, the number of the contrast district is identical with the number of second defect image；Acquisition pair Include than the step of region：Each contrast district is set to include second defect image respectively；Described the step of relatively handling, also wraps Include：If each ratio has differences, the relatively processing step is repeated.
- 8. defect inspection method as claimed in claim 1, it is characterised in that there is semiconductor devices in the wafer.
- 9. defect inspection method as claimed in claim 1, it is characterised in that obtain the position to be measured of the pending defect Step includes：Using the crystal circle center as origin coordinate system is established in the detection faces；The position to be measured includes the pending defect coordinate value under the coordinate system.
- 10. defect inspection method as claimed in claim 9, it is characterised in that the step of optimizing the position to be measured includes：Change Become the coordinate value of the position to be measured.
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| CN201711027200.6A CN107833841A (en) | 2017-10-27 | 2017-10-27 | Defect inspection method |
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| CN201711027200.6A CN107833841A (en) | 2017-10-27 | 2017-10-27 | Defect inspection method |
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| CN112951737A (en) * | 2021-02-18 | 2021-06-11 | 长江存储科技有限责任公司 | Method for improving channel hole defect, detection method and detection system |
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