CN110301038B - 用于缺陷材料分类的系统及方法 - Google Patents

用于缺陷材料分类的系统及方法 Download PDF

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CN110301038B
CN110301038B CN201880011822.6A CN201880011822A CN110301038B CN 110301038 B CN110301038 B CN 110301038B CN 201880011822 A CN201880011822 A CN 201880011822A CN 110301038 B CN110301038 B CN 110301038B
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sample
radiation
phase
detector
defects
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CN110301038A (zh
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国衡·赵
J-K·龙
M·基尔克
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KLA Corp
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KLA Tencor Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9505—Wafer internal defects, e.g. microcracks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6428—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes"
    • G01N21/643—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes" non-biological material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6445—Measuring fluorescence polarisation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/94—Investigating contamination, e.g. dust
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/645—Specially adapted constructive features of fluorimeters
    • G01N21/6456—Spatial resolved fluorescence measurements; Imaging
    • G01N2021/646—Detecting fluorescent inhomogeneities at a position, e.g. for detecting defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8822—Dark field detection
    • G01N2021/8825—Separate detection of dark field and bright field
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws

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  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Molecular Biology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
CN201880011822.6A 2017-01-05 2018-01-02 用于缺陷材料分类的系统及方法 Active CN110301038B (zh)

Applications Claiming Priority (5)

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US201762442838P 2017-01-05 2017-01-05
US62/442,838 2017-01-05
US15/480,206 2017-04-05
US15/480,206 US10234402B2 (en) 2017-01-05 2017-04-05 Systems and methods for defect material classification
PCT/US2018/012103 WO2018128995A1 (en) 2017-01-05 2018-01-02 Systems and methods for defect material classification

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CN110301038A CN110301038A (zh) 2019-10-01
CN110301038B true CN110301038B (zh) 2021-07-09

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US (2) US10234402B2 (enExample)
JP (1) JP6906614B2 (enExample)
KR (1) KR102313412B1 (enExample)
CN (1) CN110301038B (enExample)
DE (1) DE112018000314T5 (enExample)
IL (2) IL267771B (enExample)
TW (1) TWI748034B (enExample)
WO (1) WO2018128995A1 (enExample)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9995850B2 (en) 2013-06-06 2018-06-12 Kla-Tencor Corporation System, method and apparatus for polarization control
US10234402B2 (en) * 2017-01-05 2019-03-19 Kla-Tencor Corporation Systems and methods for defect material classification
US10192301B1 (en) * 2017-08-16 2019-01-29 Siemens Energy, Inc. Method and system for detecting line defects on surface of object
US10215714B1 (en) * 2017-08-16 2019-02-26 Siemens Energy, Inc. Method and system for detecting defects on surface of object
US11017520B2 (en) * 2018-09-04 2021-05-25 Kla Corporation Multi-wavelength interferometry for defect classification
TWI705242B (zh) * 2018-10-08 2020-09-21 銓發科技股份有限公司 光學檢測設備及方法
US11262591B2 (en) 2018-11-09 2022-03-01 Kla Corporation System and method for pumping laser sustained plasma with an illumination source having modified pupil power distribution
US10942135B2 (en) * 2018-11-14 2021-03-09 Kla Corporation Radial polarizer for particle detection
TWI689722B (zh) * 2018-12-04 2020-04-01 台灣積體電路製造股份有限公司 辨識晶圓上微塵顆粒的方法、電子裝置及電腦可讀取記錄媒體
KR102324622B1 (ko) * 2018-12-12 2021-11-12 어플라이드 머티리얼즈 이스라엘 리미티드 프로세스 모니터링
US11137350B2 (en) * 2019-01-28 2021-10-05 Kla Corporation Mid-infrared spectroscopy for measurement of high aspect ratio structures
US11294162B2 (en) * 2019-02-07 2022-04-05 Nanotronics Imaging, Inc. Fluorescence microscopy inspection systems, apparatus and methods with darkfield channel
US10948423B2 (en) 2019-02-17 2021-03-16 Kla Corporation Sensitive particle detection with spatially-varying polarization rotator and polarizer
US11703460B2 (en) * 2019-07-09 2023-07-18 Kla Corporation Methods and systems for optical surface defect material characterization
CN111007016A (zh) * 2019-12-09 2020-04-14 暨南大学 一种检测透明材料表面微小颗粒杂质的装置及使用方法
CN111386441B (zh) * 2020-02-24 2021-02-19 长江存储科技有限责任公司 用于半导体芯片表面形貌计量的系统
CN111356896B (zh) 2020-02-24 2021-01-12 长江存储科技有限责任公司 用于半导体芯片表面形貌计量的系统和方法
WO2021168612A1 (en) 2020-02-24 2021-09-02 Yangtze Memory Technologies Co., Ltd. Systems and methods for semiconductor chip surface topography metrology
CN111356897B (zh) 2020-02-24 2021-02-19 长江存储科技有限责任公司 用于半导体芯片表面形貌计量的系统和方法
CN115461683A (zh) * 2020-04-24 2022-12-09 Asml控股股份有限公司 污染物标识量测系统、光刻设备及其方法
CN111879789A (zh) * 2020-07-15 2020-11-03 深圳科瑞技术股份有限公司 金属表面缺陷检测方法及系统
US12072267B2 (en) * 2020-08-31 2024-08-27 Applied Materials, Inc. Method and hardware for post maintenance vacuum recovery system
CN111929310B (zh) * 2020-09-25 2021-02-05 歌尔股份有限公司 表面缺陷检测方法、装置、设备及存储介质
US20220139743A1 (en) * 2020-11-04 2022-05-05 Tokyo Electron Limited Optical Sensor for Inspecting Pattern Collapse Defects
CN115248531A (zh) * 2021-04-26 2022-10-28 上海微电子装备（集团）股份有限公司 颗粒度检测装置及其检测方法、光刻机
US11664283B2 (en) * 2021-08-20 2023-05-30 Tokyo Electron Limited Raman sensor for supercritical fluids metrology
TWI796791B (zh) * 2021-09-16 2023-03-21 崇浩光電科技股份有限公司 二維掃描式拉曼光譜檢測系統
CN113985592B (zh) * 2021-09-24 2024-09-03 江苏锐精光电研究院有限公司 基于色散元件的多角度全内反射照明成像装置
JP7604354B2 (ja) * 2021-10-29 2024-12-23 株式会社ニューフレアテクノロジー 検査装置及び焦点位置調整方法
CN114815206A (zh) * 2022-04-19 2022-07-29 中国工程物理研究院激光聚变研究中心 一种在线x光高分辨探测器
KR20240100906A (ko) * 2022-12-23 2024-07-02 엘지이노텍 주식회사 대상체의 불량 검출 장치 및 대상체의 불량 검출 방법
US20250060324A1 (en) * 2023-08-14 2025-02-20 Tokyo Electron Limited Hybrid x-ray and optical metrology and navigation
WO2025048706A1 (en) * 2023-08-28 2025-03-06 Semiconductor Technologies & Instruments Pte Ltd. System and method for die inspections
EP4575468A1 (en) * 2023-12-18 2025-06-25 Unity Semiconductor A method and a device for detecting crystalline defects in a substrate by dark field and photoluminescence

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1688877A (zh) * 2002-08-08 2005-10-26 应用材料股份有限公司 形成穿透和/或反射图像的高处理量检测系统及其方法
US7304310B1 (en) * 2003-11-21 2007-12-04 Kla-Tencor Technologies Corp. Methods and systems for inspecting a specimen using light scattered in different wavelength ranges
CN102089616A (zh) * 2008-06-03 2011-06-08 焕·J·郑 干涉缺陷检测和分类
CN102334026A (zh) * 2009-02-18 2012-01-25 株式会社尼康 表面检查装置及表面检查方法
CN102804063A (zh) * 2009-06-19 2012-11-28 克拉-坦科技术股份有限公司 用于检测极紫外掩模基板上的缺陷的检验系统与方法

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5037202A (en) 1990-07-02 1991-08-06 International Business Machines Corporation Measurement of size and refractive index of particles using the complex forward-scattered electromagnetic field
US5923430A (en) 1993-06-17 1999-07-13 Ultrapointe Corporation Method for characterizing defects on semiconductor wafers
US20020054291A1 (en) * 1997-06-27 2002-05-09 Tsai Bin-Ming Benjamin Inspection system simultaneously utilizing monochromatic darkfield and broadband brightfield illumination sources
JP4309752B2 (ja) * 1997-06-27 2009-08-05 株式会社東芝 フォトマスク検査方法、フォトマスク検査装置及びフォトマスク製造方法
US6169601B1 (en) 1998-06-23 2001-01-02 Ade Optical Systems Method and apparatus for distinguishing particles from subsurface defects on a substrate using polarized light
US6256093B1 (en) * 1998-06-25 2001-07-03 Applied Materials, Inc. On-the-fly automatic defect classification for substrates using signal attributes
US6067154A (en) 1998-10-23 2000-05-23 Advanced Micro Devices, Inc. Method and apparatus for the molecular identification of defects in semiconductor manufacturing using a radiation scattering technique such as raman spectroscopy
US6122047A (en) 1999-01-14 2000-09-19 Ade Optical Systems Corporation Methods and apparatus for identifying the material of a particle occurring on the surface of a substrate
US6440615B1 (en) 1999-02-09 2002-08-27 Nikon Corporation Method of repairing a mask with high electron scattering and low electron absorption properties
US6407386B1 (en) 1999-02-23 2002-06-18 Applied Materials, Inc. System and method for automatic analysis of defect material on semiconductors
US6091493A (en) 1999-03-30 2000-07-18 Scatter Works, Inc. Process for particle size measurement
US6627886B1 (en) 1999-05-14 2003-09-30 Applied Materials, Inc. Secondary electron spectroscopy method and system
US6486946B1 (en) 1999-06-15 2002-11-26 Ade Corporation Method for discriminating between holes in and particles on a film covering a substrate
US6515742B1 (en) 2000-11-28 2003-02-04 Memc Electronic Materials, Inc. Defect classification using scattered light intensities
US6791099B2 (en) 2001-02-14 2004-09-14 Applied Materials, Inc. Laser scanning wafer inspection using nonlinear optical phenomena
US6760100B2 (en) 2001-03-12 2004-07-06 Ade Corporation Method and apparatus for classifying defects occurring at or near a surface of a smooth substrate
JP2003149169A (ja) * 2001-11-16 2003-05-21 Tokyo Seimitsu Co Ltd ウエハ欠陥検査装置
US7069155B1 (en) 2003-10-01 2006-06-27 Advanced Micro Devices, Inc. Real time analytical monitor for soft defects on reticle during reticle inspection
US7295303B1 (en) 2004-03-25 2007-11-13 Kla-Tencor Technologies Corporation Methods and apparatus for inspecting a sample
JP2006220644A (ja) * 2005-01-14 2006-08-24 Hitachi High-Technologies Corp パターン検査方法及びその装置
JP2006292617A (ja) * 2005-04-13 2006-10-26 Nec Electronics Corp 欠陥検査装置及び基板表面の検査方法
US7433034B1 (en) 2005-06-17 2008-10-07 Nanometrics Incorporated Darkfield defect inspection with spectral contents
US7233396B1 (en) * 2006-04-17 2007-06-19 Alphasniffer Llc Polarization based interferometric detector
JP2009014510A (ja) 2007-07-04 2009-01-22 Hitachi High-Technologies Corp 検査方法及び検査装置
DE102007034289B3 (de) 2007-07-20 2009-01-29 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Verfahren zur in-situ-Bestimmung der stofflichen Zusammensetzung von optisch dünnen Schichten, Anordnungen zur Durchführung und Anwendungen des Verfahrens
JP2009092426A (ja) * 2007-10-04 2009-04-30 Nippon Steel Corp 表面検査方法及び表面検査装置
US7986412B2 (en) * 2008-06-03 2011-07-26 Jzw Llc Interferometric defect detection and classification
US8823935B1 (en) 2008-09-10 2014-09-02 Kla-Tencor Corporation Detecting and classifying surface defects with multiple radiation collectors
CN101413905B (zh) 2008-10-10 2011-03-16 深圳大学 X射线微分干涉相衬成像系统
US8605275B2 (en) * 2009-01-26 2013-12-10 Kla-Tencor Corp. Detecting defects on a wafer
JP5646906B2 (ja) 2010-08-06 2014-12-24 キヤノン株式会社 Ｘ線装置およびｘ線測定方法
WO2012082501A2 (en) 2010-12-16 2012-06-21 Kla-Tencor Corporation Wafer inspection
JP5773661B2 (ja) * 2011-01-20 2015-09-02 株式会社ニューフレアテクノロジー 照明装置、パターン検査装置及び照明光の形成方法
US8605276B2 (en) 2011-11-01 2013-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. Enhanced defect scanning
JP5773939B2 (ja) * 2012-04-27 2015-09-02 株式会社日立ハイテクノロジーズ 欠陥検査装置および欠陥検査方法
US9354177B2 (en) 2013-06-26 2016-05-31 Kla-Tencor Corporation System and method for defect detection and photoluminescence measurement of a sample
WO2015058702A1 (zh) 2013-10-23 2015-04-30 曹红光 基于光子计数的辐射成像系统、方法及其设备
US9410901B2 (en) * 2014-03-17 2016-08-09 Kla-Tencor Corporation Image sensor, an inspection system and a method of inspecting an article
JP6369860B2 (ja) 2014-07-15 2018-08-08 株式会社日立ハイテクノロジーズ 欠陥観察方法及びその装置
US9891177B2 (en) 2014-10-03 2018-02-13 Kla-Tencor Corporation TDI sensor in a darkfield system
US9859138B2 (en) 2014-10-20 2018-01-02 Lam Research Corporation Integrated substrate defect detection using precision coating
US9518934B2 (en) * 2014-11-04 2016-12-13 Kla-Tencor Corp. Wafer defect discovery
US9874526B2 (en) * 2016-03-28 2018-01-23 Kla-Tencor Corporation Methods and apparatus for polarized wafer inspection
US10234402B2 (en) * 2017-01-05 2019-03-19 Kla-Tencor Corporation Systems and methods for defect material classification

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1688877A (zh) * 2002-08-08 2005-10-26 应用材料股份有限公司 形成穿透和/或反射图像的高处理量检测系统及其方法
US7304310B1 (en) * 2003-11-21 2007-12-04 Kla-Tencor Technologies Corp. Methods and systems for inspecting a specimen using light scattered in different wavelength ranges
CN102089616A (zh) * 2008-06-03 2011-06-08 焕·J·郑 干涉缺陷检测和分类
CN102334026A (zh) * 2009-02-18 2012-01-25 株式会社尼康 表面检查装置及表面检查方法
CN102804063A (zh) * 2009-06-19 2012-11-28 克拉-坦科技术股份有限公司 用于检测极紫外掩模基板上的缺陷的检验系统与方法

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