CN110299428A - P型单晶硅双面太阳电池制备方法 - Google Patents
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- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 6
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Abstract
本发明提供了一种P型单晶硅双面太阳电池制备方法，通过在硅片前表面形成发射极；采用一步法湿法刻蚀去除磷硅玻璃并抛光硅片背面；在抛光后的硅片背面，通过热硝酸生长SiO，在硅片背面形成SiO2氧化层，再在SiO2氧化层上采用LPCVD沉积PolySi钝化层，然后通过扩散的方式在背面形成P+结；采用PECVD设备，在硅片发射极和PolySi钝化层上沉积SiNx钝化层；采用丝网印刷设备，在硅片正背面形成金属电极。本发明的优点是可应用与高温过程，与现有产业化技术兼容性高，开路电压高，填充因子高，电池的转换效率高，电池的稳定性好。
Description
技术领域
本发明涉及一种P型单晶硅双面太阳电池制备方法。
背景技术
高效晶体硅太阳电池的技术发展方向是低成本、高效率、高稳定性。随着原材料、生产设备和技术的升级改进，以及先进微电子工艺的不断渗透，近年来新型产业化高效电池技术层出不穷，如选择性发射极电池、异质结(HIT)电池、交错背接触(IBC)电池、多主栅(MBB)电池、发射极环绕贯穿(EMT)电池等，这些技术都使晶体硅太阳电池效率显著提升。如何在目前P型单晶PERC大规模批产的环境下，研发出低成本、高效率的晶硅电池成为目前急需解决的难题。
发明内容
本发明的目的在于提供一种P型单晶硅双面太阳电池制备方法。
为解决上述问题，本发明提供一种P型单晶硅双面太阳电池制备方法，包括：
在硅片的表面形成纳米绒面结构；
在硅片的正面形成发射极；
去除硅片上的磷硅玻璃并抛光硅片的背面；
在抛光后的硅片的背面，通过热硝酸生长SiO，在硅片的背面形成SiO2氧化层，再在所述SiO2氧化层上沉积PolySi钝化层，然后在硅片的背面形成P+结；
在硅片的发射极和PolySi钝化层上沉积SiNx钝化层；
在硅片的正面和背面形成金属电极。
进一步的，在上述方法中，去除硅片上的磷硅玻璃中，
采用一步法湿法刻蚀去除硅片上的磷硅玻璃。
进一步的，在上述方法中，在所述SiO2氧化层上沉积PolySi钝化层中，
在所述SiO2氧化层上采用LPCVD沉积PolySi钝化层。
进一步的，在上述方法中，在硅片的背面形成P+结中，
通过扩散的方式在硅片的背面形成P+结。
进一步的，在上述方法中，在硅片的发射极和PolySi钝化层上沉积SiNx钝化层中，
采用PECVD设备，在硅片的发射极和PolySi钝化层上沉积SiNx钝化层。
进一步的，在上述方法中，在硅片的正面和背面形成金属电极中，
采用丝网印刷设备，在硅片的正面和背面形成金属电极。
与现有技术相比，为提高P型单晶硅双面太阳电池转换效率问题，本发明提供一种P型单晶硅双面太阳电池，包括在硅片表面形成纳米绒面结构；在硅片前表面形成发射极；采用一步法湿法刻蚀去除磷硅玻璃并抛光硅片背面；在抛光后的硅片背面，通过热硝酸生长SiO，在硅片背面形成SiO2氧化层，再在SiO2氧化层上采用LPCVD沉积PolySi钝化层，然后通过扩散的方式在背面形成P+结；采用PECVD设备，在硅片发射极和PolySi钝化层上沉积SiNx钝化层；采用丝网印刷设备，在硅片正背面形成金属电极。本发明旨在通过研发高效P型双面电池技术，兼容现有产业化设备，最终实现规模量产效应，最终形成开路电压高，填充因子高，电池的转换效率高，电池的稳定性好的量产产品。本发明可应用与高温过程，与现有产业化技术兼容性高，开路电压高，填充因子高，电池的转换效率高，电池的稳定性好。
附图说明
图1是本发明一实施例的P型单晶硅双面太阳电池制备方法的结构图。
具体实施方式
为使本发明的上述目的、特征和优点能够更加明显易懂，下面结合附图和具体实施方式对本发明作进一步详细的说明。
本发明提供一种P型单晶硅双面太阳电池制备方法，包括：
步骤S1，在硅片的表面形成纳米绒面结构；
步骤S2，在硅片的正面形成发射极；
步骤S3，去除硅片上的磷硅玻璃并抛光硅片的背面；
优选的，去除硅片上的磷硅玻璃中，采用一步法湿法刻蚀去除硅片上的磷硅玻璃；
步骤S4，在抛光后的硅片的背面，通过热硝酸生长SiO，在硅片的背面形成SiO2氧化层，再在所述SiO2氧化层上沉积PolySi钝化层，然后在硅片的背面形成P+结；
优选的，在所述SiO2氧化层上沉积PolySi钝化层中，在所述SiO2氧化层上采用LPCVD沉积PolySi钝化层；
优选的，在硅片的背面形成P+结中，通过扩散的方式在硅片的背面形成P+结；
步骤S5，在硅片的发射极和PolySi钝化层上沉积SiNx钝化层；
优选的，在硅片的发射极和PolySi钝化层上沉积SiNx钝化层中，采用PECVD设备，在硅片的发射极和PolySi钝化层上沉积SiNx钝化层；
步骤S6，在硅片的正面和背面形成金属电极。
优选的，在硅片的正面和背面形成金属电极中，采用丝网印刷设备，在硅片的正面和背面形成金属电极。
在此，如图1所示，1为P型晶体硅衬底，2为非晶氧化硅层，3为PolySi多晶硅层和扩散层，4为氮化硅层。
为提高P型单晶硅双面太阳电池转换效率问题，本发明提供一种P型单晶硅双面太阳电池，包括在硅片表面形成纳米绒面结构；在硅片前表面形成发射极；采用一步法湿法刻蚀去除磷硅玻璃并抛光硅片背面；在抛光后的硅片背面，通过热硝酸生长SiO，在硅片背面形成SiO2氧化层，再在SiO2氧化层上采用LPCVD沉积PolySi钝化层，然后通过扩散的方式在背面形成P+结；采用PECVD设备，在硅片发射极和PolySi钝化层上沉积SiNx钝化层；采用丝网印刷设备，在硅片正背面形成金属电极。本发明旨在通过研发高效P型双面电池技术，兼容现有产业化设备，最终实现规模量产效应，最终形成开路电压高，填充因子高，电池的转换效率高，电池的稳定性好的量产产品。本发明可应用与高温过程，与现有产业化技术兼容性高，开路电压高，填充因子高，电池的转换效率高，电池的稳定性好。
本说明书中各个实施例采用递进的方式描述，每个实施例重点说明的都是与其他实施例的不同之处，各个实施例之间相同相似部分互相参见即可。
显然，本领域的技术人员可以对发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包括这些改动和变型在内。
Claims (6)
1.一种P型单晶硅双面太阳电池制备方法，其特征在于，包括：
在硅片的表面形成纳米绒面结构；
在硅片的正面形成发射极；
去除硅片上的磷硅玻璃并抛光硅片的背面；
在抛光后的硅片的背面，通过热硝酸生长SiO，在硅片的背面形成SiO2氧化层，再在所述SiO2氧化层上沉积PolySi钝化层，然后在硅片的背面形成P+结；
在硅片的发射极和PolySi钝化层上沉积SiNx钝化层；
在硅片的正面和背面形成金属电极。
2.如权利要求1所述的P型单晶硅双面太阳电池制备方法，其特征在于，去除硅片上的磷硅玻璃中，
采用一步法湿法刻蚀去除硅片上的磷硅玻璃。
3.如权利要求1所述的P型单晶硅双面太阳电池制备方法，其特征在于，在所述SiO2氧化层上沉积PolySi钝化层中，
在所述SiO2氧化层上采用LPCVD沉积PolySi钝化层。
4.如权利要求1所述的P型单晶硅双面太阳电池制备方法，其特征在于，在硅片的背面形成P+结中，
通过扩散的方式在硅片的背面形成P+结。
5.如权利要求1所述的P型单晶硅双面太阳电池制备方法，其特征在于，在硅片的发射极和PolySi钝化层上沉积SiNx钝化层中，
采用PECVD设备，在硅片的发射极和PolySi钝化层上沉积SiNx钝化层。
6.如权利要求1所述的P型单晶硅双面太阳电池制备方法，其特征在于，在硅片的正面和背面形成金属电极中，
采用丝网印刷设备，在硅片的正面和背面形成金属电极。
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| CN106449884A (zh) * | 2016-11-09 | 2017-02-22 | 中国科学院宁波材料技术与工程研究所 | 太阳能电池氧化硅层的制备方法及太阳能电池 |
| CN106784129A (zh) * | 2015-11-20 | 2017-05-31 | 上海神舟新能源发展有限公司 | 背发射结背面隧道氧化钝化接触高效电池的制作方法 |
| CN107482078A (zh) * | 2016-06-02 | 2017-12-15 | 上海神舟新能源发展有限公司 | 硅基太阳能电池p型表面隧穿氧化钝化接触制作方法 |
| CN109216498A (zh) * | 2017-06-29 | 2019-01-15 | 上海神舟新能源发展有限公司 | 一种双面隧穿氧化钝化高效n型双面电池的制备方法 |
-
2019
- 2019-05-17 CN CN201910411633.4A patent/CN110299428A/zh active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784129A (zh) * | 2015-11-20 | 2017-05-31 | 上海神舟新能源发展有限公司 | 背发射结背面隧道氧化钝化接触高效电池的制作方法 |
| CN107482078A (zh) * | 2016-06-02 | 2017-12-15 | 上海神舟新能源发展有限公司 | 硅基太阳能电池p型表面隧穿氧化钝化接触制作方法 |
| CN106449884A (zh) * | 2016-11-09 | 2017-02-22 | 中国科学院宁波材料技术与工程研究所 | 太阳能电池氧化硅层的制备方法及太阳能电池 |
| CN109216498A (zh) * | 2017-06-29 | 2019-01-15 | 上海神舟新能源发展有限公司 | 一种双面隧穿氧化钝化高效n型双面电池的制备方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114038941A (zh) * | 2021-11-05 | 2022-02-11 | 浙江晶科能源有限公司 | 太阳能电池制备方法 |
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