CN109686816A - 钝化接触n型太阳电池的制备方法 - Google Patents
钝化接触n型太阳电池的制备方法 Download PDFInfo
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- CN109686816A CN109686816A CN201811484034.7A CN201811484034A CN109686816A CN 109686816 A CN109686816 A CN 109686816A CN 201811484034 A CN201811484034 A CN 201811484034A CN 109686816 A CN109686816 A CN 109686816A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 58
- 229920005591 polysilicon Polymers 0.000 claims abstract description 57
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052796 boron Inorganic materials 0.000 claims abstract description 37
- 238000009792 diffusion process Methods 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims description 35
- 238000002161 passivation Methods 0.000 claims description 34
- 239000011159 matrix material Substances 0.000 claims description 32
- 239000005297 pyrex Substances 0.000 claims description 31
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 30
- 239000012528 membrane Substances 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 239000000243 solution Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 11
- 229910004205 SiNX Inorganic materials 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 10
- 229910052593 corundum Inorganic materials 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 4
- 238000002513 implantation Methods 0.000 claims description 3
- LKBREHQHCVRNFR-UHFFFAOYSA-K [B+3].[Br-].[Br-].[Br-] Chemical compound [B+3].[Br-].[Br-].[Br-] LKBREHQHCVRNFR-UHFFFAOYSA-K 0.000 claims 1
- 239000005388 borosilicate glass Substances 0.000 abstract description 8
- 230000006378 damage Effects 0.000 abstract description 6
- 238000010248 power generation Methods 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract 6
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 description 25
- 239000010703 silicon Substances 0.000 description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 24
- 238000010586 diagram Methods 0.000 description 21
- 210000004027 cell Anatomy 0.000 description 14
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000007747 plating Methods 0.000 description 5
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
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CN201811484034.7A CN109686816B (zh) | 2018-12-06 | 2018-12-06 | 钝化接触n型太阳电池的制备方法 |
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110197855A (zh) * | 2019-05-29 | 2019-09-03 | 西安理工大学 | 用于Topcon电池制作的poly-Si绕镀的去除方法 |
CN110265494A (zh) * | 2019-07-12 | 2019-09-20 | 苏州中来光伏新材股份有限公司 | 一种局部背场TOPCon太阳能电池及其制备方法 |
CN110571304A (zh) * | 2019-08-08 | 2019-12-13 | 江西展宇新能源股份有限公司 | 一种钝化接触双面太阳电池的制作方法 |
CN110571149A (zh) * | 2019-08-09 | 2019-12-13 | 苏州腾晖光伏技术有限公司 | 一种p型全接触钝化太阳能电池的制备方法 |
CN110660881A (zh) * | 2019-08-30 | 2020-01-07 | 泰州中来光电科技有限公司 | 一种无掩膜去除钝化接触电池多晶硅绕镀的方法 |
CN110931604A (zh) * | 2019-12-10 | 2020-03-27 | 江苏微导纳米科技股份有限公司 | Topcon结构太阳能电池的制备方法 |
CN111192930A (zh) * | 2020-01-09 | 2020-05-22 | 浙江晶科能源有限公司 | 一种钝化接触太阳能电池及其制作方法 |
CN111785808A (zh) * | 2020-07-13 | 2020-10-16 | 常州时创能源股份有限公司 | 一种TOPCon电池绕镀多晶硅的去除方法及应用 |
CN112599618A (zh) * | 2020-12-15 | 2021-04-02 | 泰州隆基乐叶光伏科技有限公司 | 一种太阳能电池及其制作方法 |
CN112908838A (zh) * | 2019-11-19 | 2021-06-04 | 长鑫存储技术有限公司 | 改善热处理腔室污染的方法 |
CN113745106A (zh) * | 2021-07-23 | 2021-12-03 | 英利能源(中国)有限公司 | 一种N型TOPCon电池正面绕镀的去除方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010064303A1 (ja) * | 2008-12-02 | 2010-06-10 | 三菱電機株式会社 | 太陽電池セルの製造方法 |
CN105826428A (zh) * | 2016-04-26 | 2016-08-03 | 泰州中来光电科技有限公司 | 一种钝化接触n型晶体硅电池及制备方法和组件、系统 |
CN107331733A (zh) * | 2017-08-02 | 2017-11-07 | 浙江晶科能源有限公司 | 一种单面多晶硅的制备方法 |
CN107644925A (zh) * | 2017-09-18 | 2018-01-30 | 浙江晶科能源有限公司 | 一种p型晶体硅太阳能电池的制备方法 |
CN107968127A (zh) * | 2017-12-19 | 2018-04-27 | 泰州中来光电科技有限公司 | 一种钝化接触n型太阳能电池及制备方法、组件和系统 |
-
2018
- 2018-12-06 CN CN201811484034.7A patent/CN109686816B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010064303A1 (ja) * | 2008-12-02 | 2010-06-10 | 三菱電機株式会社 | 太陽電池セルの製造方法 |
CN105826428A (zh) * | 2016-04-26 | 2016-08-03 | 泰州中来光电科技有限公司 | 一种钝化接触n型晶体硅电池及制备方法和组件、系统 |
CN107331733A (zh) * | 2017-08-02 | 2017-11-07 | 浙江晶科能源有限公司 | 一种单面多晶硅的制备方法 |
CN107644925A (zh) * | 2017-09-18 | 2018-01-30 | 浙江晶科能源有限公司 | 一种p型晶体硅太阳能电池的制备方法 |
CN107968127A (zh) * | 2017-12-19 | 2018-04-27 | 泰州中来光电科技有限公司 | 一种钝化接触n型太阳能电池及制备方法、组件和系统 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110197855A (zh) * | 2019-05-29 | 2019-09-03 | 西安理工大学 | 用于Topcon电池制作的poly-Si绕镀的去除方法 |
CN110265494A (zh) * | 2019-07-12 | 2019-09-20 | 苏州中来光伏新材股份有限公司 | 一种局部背场TOPCon太阳能电池及其制备方法 |
CN110571304A (zh) * | 2019-08-08 | 2019-12-13 | 江西展宇新能源股份有限公司 | 一种钝化接触双面太阳电池的制作方法 |
CN110571149A (zh) * | 2019-08-09 | 2019-12-13 | 苏州腾晖光伏技术有限公司 | 一种p型全接触钝化太阳能电池的制备方法 |
CN110571149B (zh) * | 2019-08-09 | 2022-09-27 | 苏州腾晖光伏技术有限公司 | 一种p型全接触钝化太阳能电池的制备方法 |
CN110660881A (zh) * | 2019-08-30 | 2020-01-07 | 泰州中来光电科技有限公司 | 一种无掩膜去除钝化接触电池多晶硅绕镀的方法 |
CN110660881B (zh) * | 2019-08-30 | 2021-12-07 | 泰州中来光电科技有限公司 | 一种无掩膜去除钝化接触电池多晶硅绕镀的方法 |
CN112908838A (zh) * | 2019-11-19 | 2021-06-04 | 长鑫存储技术有限公司 | 改善热处理腔室污染的方法 |
CN110931604A (zh) * | 2019-12-10 | 2020-03-27 | 江苏微导纳米科技股份有限公司 | Topcon结构太阳能电池的制备方法 |
CN111192930A (zh) * | 2020-01-09 | 2020-05-22 | 浙江晶科能源有限公司 | 一种钝化接触太阳能电池及其制作方法 |
CN111785808A (zh) * | 2020-07-13 | 2020-10-16 | 常州时创能源股份有限公司 | 一种TOPCon电池绕镀多晶硅的去除方法及应用 |
CN112599618A (zh) * | 2020-12-15 | 2021-04-02 | 泰州隆基乐叶光伏科技有限公司 | 一种太阳能电池及其制作方法 |
CN113745106A (zh) * | 2021-07-23 | 2021-12-03 | 英利能源(中国)有限公司 | 一种N型TOPCon电池正面绕镀的去除方法 |
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