WO2015188646A1 - 太阳能电池超精细电极转移薄膜、制备方法及其应用方法 - Google Patents

太阳能电池超精细电极转移薄膜、制备方法及其应用方法 Download PDF

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WO2015188646A1
WO2015188646A1 PCT/CN2015/075380 CN2015075380W WO2015188646A1 WO 2015188646 A1 WO2015188646 A1 WO 2015188646A1 CN 2015075380 W CN2015075380 W CN 2015075380W WO 2015188646 A1 WO2015188646 A1 WO 2015188646A1
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electrode
solar cell
transfer film
hot melt
melt adhesive
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PCT/CN2015/075380
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English (en)
French (fr)
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周小红
方宗豹
陈林森
朱鹏飞
浦东林
殷熙梅
赵云龙
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苏州苏大维格光电科技股份有限公司
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Priority to DE112015002790.4T priority Critical patent/DE112015002790T5/de
Priority to US15/305,748 priority patent/US11476373B2/en
Publication of WO2015188646A1 publication Critical patent/WO2015188646A1/zh
Priority to US17/968,263 priority patent/US20230051753A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the invention relates to the technical field of solar cells, in particular to a solar cell ultra-fine electrode transfer film, a preparation method and an application method thereof.
  • Monocrystalline silicon and polycrystalline silicon solar cells generally use precision screen printing to form surface electrodes on the silicon surface.
  • the electrode has a line width of 60 ⁇ m-100 ⁇ m.
  • the screen printing yield of 60 ⁇ m line width is screened and conductive.
  • the influence of the characteristics of the slurry may cause the network to be blocked and affect the quality of the electrode.
  • the electrode with thicker line width has two disadvantages: the amount of conductive paste is large, resulting in high cost, and the surface electrode has large coverage on the silicon wafer, which affects the photoelectric conversion efficiency of the battery. Therefore, how to reduce the line width of the surface electrode, reduce the amount of conductive paste and increase the light-receiving area of the battery is of great value.
  • the surface electrode for preparing solar cells must be constrained by the fact that it can be docked with the existing solar cell processing technology, is easy to implement, and supports efficient processing; the overall cost is lower than the method of printing electrodes by screen printing (screen cost, conductive paste cost) .
  • the materials are easy to prepare in large quantities.
  • an electrode is formed by filling a mold imprinted with a pattern, and then the electrode is transferred from the mold through the adhesive film and fired onto the semiconductor substrate.
  • the PDMS mold used in the invention is soft and easily damaged, and the electrode line width is 20 ⁇ m or more, and the electrode is directly fired on the semiconductor substrate, which has problems in production efficiency and environmental control.
  • the present invention provides a solar cell ultra-fine electrode transfer film, a preparation method, and an application method thereof.
  • a solar cell ultra-fine electrode transfer film comprising, in order from bottom to top, a substrate, a release layer, a resin layer and a hot melt adhesive layer, wherein the resin layer is formed with electrode trenches, and the electrode trenches are formed An electrode is formed.
  • the electrode trench and the electrode are a comb structure or a honeycomb structure of a corresponding solar cell.
  • the electrode is a mixed material of a glass microbead and a conductive paste.
  • the release layer has a thickness of from 0.5 ⁇ m to 1.2 ⁇ m
  • the hot melt adhesive layer has a thickness of from 0.5 ⁇ m to 2.0 ⁇ m.
  • the electrode trench has a line width of 2 ⁇ m to 50 ⁇ m and a depth of 2 ⁇ m to 60 ⁇ m.
  • the electrode trench has a line width of 10 ⁇ m to 30 ⁇ m.
  • a method for preparing a solar cell ultra-fine electrode transfer film comprising:
  • the electrode forming method in the step S4 is:
  • the glass frit and the conductive paste are filled into the electrode trenches and sintered at a low temperature of less than 150 ° C to form electrodes.
  • the glass frit and the conductive paste are filled by simultaneously filling or filling the glass frit and refilling the conductive paste.
  • a method for applying a solar cell ultra-fine electrode transfer film comprises:
  • the hot melt adhesive layer volatilizes at a high temperature, and the electrode is fused with the surface of the solar cell to realize complete transfer of the ultrafine transparent electrode.
  • the invention continuously prepares the conductive electrode on the transparent film by the roll-to-roll nanoimprinting method, and the electrode is integrally transferred, there is no problem of poor local transfer, and the hot melt adhesive layer and the semiconductor substrate are directly directly. High temperature sintering, the hot melt adhesive layer material volatilizes and the electrode remains, which has the advantages of reliable, high efficiency and convenient application.
  • FIG. 1 is a schematic structural view of an electrode transfer film of the present invention
  • FIG. 2a is a schematic structural view of a comb-like structure electrode according to an embodiment of the present invention.
  • FIG. 2b is a schematic structural view of a honeycomb structure electrode according to another embodiment of the present invention.
  • the present invention discloses a solar cell ultra-fine electrode transfer film.
  • the electrode transfer film includes a substrate 10 , a release layer 20 , a resin layer 30 and a hot melt adhesive layer 40 in order from bottom to top.
  • An electrode trench 31 is formed in the resin layer 30, and an electrode 50 is formed in the electrode trench 31.
  • the substrate 10 is typically a plastic film or paper.
  • the release layer 20 is a film having a separation surface, usually in order to add a plastic film or
  • the release force of the paper will be treated by plasma treatment, or fluorine treatment, or silicon-coated release agent on the surface layer of the film material to form a release layer.
  • the release layer and the specific material are limited. Under conditions, there is no stickiness or slight stickiness after contact.
  • the release layer is used to separate the resin layer 30 and the hot melt adhesive layer 40 from the substrate 10.
  • the release layer has a thickness of from 0.5 ⁇ m to 1.2 ⁇ m.
  • the material of the resin layer 30 is a UV photosensitive resin, which is imprinted on the resin layer by a convex mold having an electrode structure to form an electrode trench 31 for growing the electrode 50.
  • the electrode trench has a line width of 2 ⁇ m to 50 ⁇ m and a depth of 2 ⁇ m to 60 ⁇ m.
  • the electrode trench of the present invention has a typical line width of 10 ⁇ m to 30 ⁇ m.
  • the electrode is a mixed material of a glass frit and a conductive paste.
  • the electrode in the present invention is a silver wire, and in other embodiments, it may be a metal material such as a gold wire or a copper wire.
  • the electrode trench 31 and the electrode 50 are corresponding comb structures or honeycomb structures.
  • the hot melt adhesive layer 40 volatilizes after high temperature sintering.
  • the hot melt adhesive layer 40 has a thickness of 0.5 ⁇ m to 2 ⁇ m.
  • the invention also discloses a preparation method of a solar cell ultra-fine electrode transfer film, which specifically comprises:
  • the resin layer 30 is coated on the release layer 20, and is embossed on the resin layer 30 by a convex mold having an electrode structure to form an electrode trench 31, and the electrode trench 31 and the electrode 50 are corresponding comb structures or In the honeycomb structure, the line width and depth of the electrode trench are adjusted according to the needs of the conductive characteristics of the electrode;
  • step S2 the electrode forming method in step S2 is:
  • the glass frit and the conductive paste are filled into the electrode trench by a doctor blade method, and baked (baked) at a low temperature of less than 150 ° C to form an electrode.
  • the filling method of the glass frit and the conductive paste is simultaneously filling or filling the glass first.
  • the material is refilled with a conductive paste.
  • the conductive paste has a mass percentage content of 80%, and in other embodiments, other percentage contents.
  • the application method of the solar cell ultra-fine electrode transfer film of the present invention specifically includes:
  • the hot melt adhesive layer volatilizes at a high temperature, and the electrode is fused with the surface of the solar cell to realize complete transfer of the ultrafine transparent electrode.
  • the solar cell ultra-fine electrode transfer film, the preparation method and the application method thereof are successively prepared on the transparent film by the roll-to-roll nano-imprint method, and the electrode is integrally transferred, and there is no local transfer.
  • the problem is good, and the hot melt adhesive layer and the semiconductor substrate are directly sintered at a high temperature, and the hot melt adhesive layer material is volatilized to retain the electrode, which has the advantages of reliability, high efficiency and convenient application.
  • the battery device mentioned in the present invention includes, but is not limited to, a solar cell, etc.
  • the solar cell includes, but is not limited to, an amorphous silicon-microcrystalline silicon thin film battery, a CIGS battery, a dye-sensitized solar cell, an organic solar cell, or an arsenic. Gallium batteries, etc.
  • the present invention has the following beneficial effects as compared with the prior art:
  • the electrode is continuously prepared on the transparent film by roll-to-roll nanoimprinting, and the electrode is integrally transferred at the same time, and there is no problem of poor local transfer;
  • the hot melt adhesive layer and the semiconductor substrate are directly sintered at a high temperature, and the hot melt adhesive layer material is volatilized, thereby retaining the electrode, and has the advantages of being reliable, efficient, and convenient to apply;
  • a line width of less than 30 ⁇ m can be achieved, and the coverage of the electrode on the surface of the silicon wafer is reduced by at least 50%;
  • the distribution of the honeycomb structure electrode can further reduce the current transmission of the solar cell to the electrode distance, reduce the carrier recombination rate, and is beneficial to improve the conversion efficiency.

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Abstract

提供了一种太阳能电池超精细电极转移薄膜、制备方法及其应用方法。电极转移薄膜从下至上依次包括衬底（10）、离型层（20）、树脂层（30）及热熔胶层（40），树脂层（30）中形成有电极沟槽（31），电极沟槽（31）中形成有电极（50）。通过卷对卷纳米压印的方式，在透明薄膜上连续制备出超精细导电电极，电极线宽2µm-50µm，典型线宽10µm-30µm。直接将热熔胶层（40）的超精细电极与太阳能电池贴合，剥离衬底（10）材料，高温烧结，热熔胶层（40）材料挥发而电极保留，电极整体性转移下来，不存在局部转移不佳的问题，具有可靠、高效、便于应用的优点。

Description

太阳能电池超精细电极转移薄膜、制备方法及其应用方法
本申请要求于2014年6月13日提交中国专利局、申请号为201410265681.4、发明名称为“太阳能电池超精细电极转移薄膜、制备方法及其应用方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明涉及太阳能电池技术领域，特别是涉及一种太阳能电池超精细电极转移薄膜、制备方法及其应用方法。
背景技术
单晶硅和多晶硅太阳能电池普遍采用精密丝网印刷的方式，在硅表面形成表面电极，通常电极的线宽在60μm-100μm，其中，60μm线宽的丝网印刷的成品率受到丝网、导电浆料特性的影响，可能出现堵网情况，影响电极的质量。同时，较粗线宽的电极，存在两个不足：导电浆料的用量大，导致成本高，同时表面电极对硅片的覆盖大，影响电池的光电转换效率。因此，如何降低表面电极的线宽，减少导电浆料的用量和提高电池的收光面积，具有重要价值。
制备太阳能电池的表面电极必须受到制约因素：与现有太阳能电池加工工艺能对接，容易实施，支持高效加工；综合成本要低于通过丝网印刷电极的方法(丝网成本、导电浆料成本)。材料容易大批量制备。
针对PCT申请中国发明专利申请号201080023219.3揭示的太阳能电池用前电极的制造方法，通过填充压印了图案的模具形成电极，再将电极通过胶粘膜从模具转移后烧制到半导体衬底之上，该发明使用的PDMS模具是软性的，容易受损，电极线宽在20微米以上，将电极直接烧制于半导体衬底之上，在生产效率上和环境控制上存在问题。
因此，针对上述技术问题，有必要提供一种太阳能电池超精细电极转移薄膜、制备方法及其应用方法。
发明内容
有鉴于此，为了解决所述现有技术中的问题，本发明提供了一种太阳能电池超精细电极转移薄膜、制备方法及其应用方法。
为了实现上述目的，本发明实施例提供的技术方案如下：
一种太阳能电池超精细电极转移薄膜，所述电极转移薄膜从下至上依次包括衬底、离型层、树脂层及热熔胶层，所述树脂层中形成有电极沟槽，电极沟槽中形成有电极。
作为本发明的进一步改进，所述电极沟槽与电极为对应的太阳能电池的梳状结构或者蜂窝结构。
作为本发明的进一步改进，所述电极为玻璃微珠料与导电浆料的混合材料。
作为本发明的进一步改进，所述离型层的厚度为0.5μm-1.2μm，所述热熔胶层的厚度为0.5μm-2.0μm。
作为本发明的进一步改进，所述电极沟槽的线宽为2μm-50μm，深度为2μm-60μm。
作为本发明的进一步改进，所述电极沟槽的线宽为10μm-30μm。
相应地，一种太阳能电池超精细电极转移薄膜的制备方法，所述制备方法包括：
S1、提供一衬底；
S2、在衬底上涂布离型层；
S3、在离型层上涂布树脂层，通过具有电极结构的凸型模具在树脂层上压印，形成电极沟槽，电极沟槽的线宽和深度根据电极导电特性的需要进行调整；
S4、在电极沟槽内填充导电浆料并烘烤后形成电极，并在电极上涂布热熔胶层。
作为本发明的进一步改进，所述步骤S4中电极形成方法为：
将玻璃料与导电浆料填充到电极沟槽内，在小于150℃的低温下烧结，形成电极。
作为本发明的进一步改进，所述玻璃料与导电浆料的填充方法为同时填充、或先填充玻璃料再填充导电浆料。
相应地，一种太阳能电池超精细电极转移薄膜的应用方法，所述应用方法包括：
将电极转移薄膜的热熔胶层面向太阳能电池的表面抗反层贴合，并加热复合，使热熔胶与抗反层粘接；
去除离型层和衬底，使得透明电极复合到太阳能电池表面上；
高温烧结，热熔胶层高温挥发，电极与太阳能电池表面渗透熔合，实现超精细透明电极完整转移。
本发明通过卷对卷纳米压印的方式，在透明薄膜上连续制备出导电电极，同时电极整体性地转移下来，不存在局部转移不佳的问题，并且直接将热熔胶层与半导体衬底高温烧结，热熔胶层材料挥发从而电极保留，具有可靠、高效、便于应用的优点。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明中记载的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明电极转移薄膜的结构示意图；
图2a为本发明一实施方式中梳状结构电极的结构示意图；
图2b为本发明另一实施方式中蜂窝结构电极的结构示意图。
具体实施方式
以下将结合附图所示的具体实施方式对本发明进行详细描述。但这些实施方式并不限制本发明，本领域的普通技术人员根据这些实施方式所做出的结构、方法、或功能上的变换均包含在本发明的保护范围内。
本发明公开了一种太阳能电池超精细电极转移薄膜，参图1所示，该电极转移薄膜从下至上依次包括衬底10、离型层20、树脂层30及热熔胶层40，其中，树脂层30中形成有电极沟槽31，电极沟槽31中形成有电极50。
以下对本发明中各层作具体说明。
衬底10通常为塑料薄膜或者纸张。
离型层20是表面具有分离性的薄膜，通常情况下为了增加塑料薄膜或 纸张的离型力，会将塑料薄膜或纸张做等离子处理、或涂氟处理、或涂硅的离型剂于薄膜材质的表层上，形成离型层，离型层与特定的材料在有限的条件下接触后不具有粘性、或轻微的粘性。
本发明中离型层用于将树脂层30及热熔胶层40从衬底10上分离出来。优选地，离型层的厚度为0.5μm-1.2μm。
树脂层30材料为UV感光树脂，通过具有电极结构的凸型模具在树脂层上压印，形成电极沟槽31，电极沟槽31用于生长电极50。优选地，电极沟槽的线宽为2μm-50μm，深度为2μm-60μm，优选地，本发明中电极沟槽的典型线宽为10μm-30μm。电极为玻璃料与导电浆料的混合材料。优选地，本发明中的电极为银线，在其他实施方式中也可以为金线、铜线等金属材质。
参图2a、2b所示，本发明中电极沟槽31与电极50为对应的梳状结构或者蜂窝结构。
热熔胶层40高温烧结后会挥发，优选地，热熔胶层40厚度为0.5μm-2μm。
本发明还公开了一种太阳能电池超精细电极转移薄膜的制备方法，具体包括：
S1、提供一衬底10；
S2、在衬底10上涂布0.5μm-1.2μm厚度的离型层20；
S3、在离型层20上涂布树脂层30，通过具有电极结构的凸型模具在树脂层30上压印，形成电极沟槽31，电极沟槽31与电极50为对应的梳状结构或者蜂窝结构，电极沟槽的线宽和深度根据电极导电特性的需要进行调整；
S4、在电极沟槽31内填充导电浆料并烘烤后形成电极50，并在电极上涂布0.5μm-2μm厚度的热熔胶层40。
其中，步骤S2中电极形成方法为：
通过刮涂方式，将玻璃料与导电浆料填充到电极沟槽内，在小于150℃的低温下烧结(烘烤)，形成电极。
进一步地，玻璃料与导电浆料的填充方法为同时填充、或先填充玻璃 料再填充导电浆料。优选地，导电浆料的质量百分比含量为80％，在其他实施方式中，也可以为其他百分比含量。
本发明中太阳能电池超精细电极转移薄膜的应用方法，具体包括：
将电极转移薄膜的热熔胶层面向太阳能电池的表面抗反层贴合，并加热复合，使热熔胶与抗反层粘接；
去除离型层和衬底，使得透明电极复合到太阳能电池表面上；
高温烧结，热熔胶层高温挥发，电极与太阳能电池表面渗透熔合，实现超精细透明电极完整转移。
本发明中太阳能电池超精细电极转移薄膜、制备方法及其应用方法通过卷对卷纳米压印的方式，在透明薄膜上连续制备出导电电极，同时电极整体性地转移下来，不存在局部转移不佳的问题，并且直接将热熔胶层与半导体衬底高温烧结，热熔胶层材料挥发从而电极保留，具有可靠、高效、便于应用的优点。
其中，本发明中所提到的电池器件包括但不限于太阳能电池等，太阳能电池包括但不限于非晶硅-微晶硅薄膜电池、CIGS电池、染料敏化太阳能电池、有机太阳能电池或砷化镓电池等。
综上所述，与现有技术相比，本发明具有以下有益效果：
通过卷对卷纳米压印的方式，在透明薄膜上连续制备出电极，同时将电极整体性地转移下来，不存在局部转移不佳的问题；
直接将热熔胶层与半导体衬底高温烧结，热熔胶层材料挥发，从而电极保留，具有可靠、高效、便于应用的优点；
可实现小于30μm的线宽，将电极对硅片表面的覆盖率至少减少50％；
蜂窝结构电极的分布，可进一步减少太阳能电池的电流传输到电极距离，降低载流子复合率，有利于提高转换效率。
对于本领域技术人员而言，显然本发明不限于上述示范性实施例的细节，而且在不背离本发明的精神或基本特征的情况下，能够以其他的具体形式实现本发明。因此，无论从哪一点来看，均应将实施例看作是示范性的，而且是非限制性的，本发明的范围由所附权利要求而不是上述说明限定，因此旨在将落在权利要求的等同要件的含义和范围内的所有变化囊括 在本发明内。不应将权利要求中的任何附图标记视为限制所涉及的权利要求。
此外，应当理解，虽然本说明书按照实施方式加以描述，但并非每个实施方式仅包含一个独立的技术方案，说明书的这种叙述方式仅仅是为清楚起见，本领域技术人员应当将说明书作为一个整体，各实施例中的技术方案也可以经适当组合，形成本领域技术人员可以理解的其他实施方式。

Claims (10)

  1. 一种太阳能电池超精细电极转移薄膜，其特征在于，所述电极转移薄膜从下至上依次包括衬底、离型层、树脂层及热熔胶层，所述树脂层中形成有电极沟槽，电极沟槽中形成有电极。
  2. 根据权利要求1所述的太阳能电池超精细电极转移薄膜，其特征在于，所述电极沟槽与电极为对应的太阳能电池的梳状结构或者蜂窝结构。
  3. 根据权利要求2所述的太阳能电池超精细电极转移薄膜，其特征在于，所述电极为玻璃微珠料与导电浆料的混合材料。
  4. 根据权利要求1所述的太阳能电池超精细电极转移薄膜，其特征在于，所述离型层的厚度为0.5μm-1.2μm，所述热熔胶层的厚度为0.5μm-2.0μm。
  5. 根据权利要求1所述的太阳能电池超精细电极转移薄膜，其特征在于，所述电极沟槽的线宽为2μm-50μm，深度为2μm-60μm。
  6. 根据权利要求5所述的太阳能电池超精细电极转移薄膜，其特征在于，所述电极沟槽的线宽为10μm-30μm。
  7. 一种如权利要求1～6中任一项所述的太阳能电池超精细电极转移薄膜的制备方法，其特征在于，所述制备方法包括：
    S1、提供一衬底；
    S2、在衬底上涂布离型层；
    S3、在离型层上涂布树脂层，通过具有电极结构的凸型模具在树脂层上压印，形成电极沟槽，电极沟槽的线宽和深度根据电极导电特性的需要进行调整；
    S4、在电极沟槽内填充导电浆料并烘烤后形成电极，并在电极上涂布热熔胶层。
  8. 根据权利要求7所述的制备方法，其特征在于，所述步骤S4中电极形成方法为：
    将玻璃料与导电浆料填充到电极沟槽内，在小于150℃的低温下烧结，形成电极。
  9. 根据权利要求8所述的制备方法，其特征在于，所述玻璃料与导电浆料的填充方法为同时填充、或先填充玻璃料再填充导电浆料。
  10. 一种如权利要求1～6中任一项所述的太阳能电池超精细电极转移薄膜的应用方法，其特征在于，所述应用方法包括：
    将电极转移薄膜的热熔胶层面向太阳能电池的表面抗反层贴合，并加热复合，使热熔胶与抗反层粘接；
    去除离型层和衬底，使得透明电极复合到太阳能电池表面上；
    高温烧结，热熔胶层高温挥发，电极与太阳能电池表面渗透熔合，实现超精细透明电极完整转移。
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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104009124B (zh) * 2014-06-13 2018-09-18 苏州苏大维格光电科技股份有限公司 太阳能电池超精细电极转移薄膜、制备方法及其应用方法
CN106448825B (zh) * 2016-10-21 2019-01-18 苏州苏大维格光电科技股份有限公司 一种图形化精细导电薄膜的制备方法
CN108666612B (zh) * 2018-07-27 2024-03-01 重庆能源职业学院 用于蓄电池的撕膜及清洗风干装置
CN110859026A (zh) * 2018-08-24 2020-03-03 绵阳市奇帆科技有限公司 一种印刷工艺制作led线路板电极的制作方法
CN112133472A (zh) * 2019-06-24 2020-12-25 苏州维业达触控科技有限公司 一种透明导电膜及其制作方法
CN111584654A (zh) * 2020-03-31 2020-08-25 天津爱旭太阳能科技有限公司 一种制备晶硅太阳能电池电极的方法
CN112071921A (zh) * 2020-09-01 2020-12-11 深圳纳弘熠岦光学科技有限公司 栅线制备方法
CN112802926B (zh) * 2021-04-13 2021-08-24 浙江晶科能源有限公司 一种太阳能电池制备方法及半导体结构
CN113793883B (zh) * 2021-09-07 2024-02-23 苏州诺菲纳米科技有限公司 一种太阳能电池电极的制备方法
CN114709278B (zh) * 2022-06-06 2022-08-23 一道新能源科技(衢州)有限公司 一种激光熔融制备晶硅太阳能电池电极的方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1875433A (zh) * 2003-10-28 2006-12-06 住友金属矿山株式会社 透明导电层叠体及其制造方法及使用了该层叠体的器件
CN101562217A (zh) * 2009-05-22 2009-10-21 中国科学院电工研究所 一种太阳电池前电极制备方法
JP2010114032A (ja) * 2008-11-10 2010-05-20 Yokohama Rubber Co Ltd:The 光電極の製造方法、光電極、光電変換素子および色素増感太陽電池
KR20120078875A (ko) * 2011-01-03 2012-07-11 주식회사 엘지화학 태양전지용 전극의 제조방법 및 이로부터 제조된 전극
CN102576745A (zh) * 2009-08-06 2012-07-11 三菱电机株式会社 太阳能电池的电极形成方法、太阳能电池的制造方法、太阳能电池
CN103310991A (zh) * 2012-12-27 2013-09-18 长兴化学工业股份有限公司 薄膜电极及其制法
CN104009124A (zh) * 2014-06-13 2014-08-27 苏州苏大维格光电科技股份有限公司 太阳能电池超精细电极转移薄膜、制备方法及其应用方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07279099A (ja) * 1994-03-29 1995-10-24 Nitto Denko Corp 剥離紙および粘着テープもしくはシート
TW353762B (en) 1996-10-21 1999-03-01 Dainippon Printing Co Ltd Transfer sheet, and pattern-forming method
US6207268B1 (en) * 1996-11-12 2001-03-27 Dai Nippon Printing Co., Ltd. Transfer sheet, and pattern-forming method
JP2005079243A (ja) * 2003-08-29 2005-03-24 Tdk Corp 積層電子部品用の積層体ユニットの製造方法
CN1295173C (zh) * 2004-03-02 2007-01-17 汕头市东田转印有限公司 一种转印膜及其在玻璃制品表面进行直接转印的方法
TWI403761B (zh) 2005-02-15 2013-08-01 Fujifilm Corp 透光性導電性膜之製法
CN100468846C (zh) * 2007-04-30 2009-03-11 西安交通大学 一种微型直接甲醇燃料电池的复合双极板制备方法
DE102007027999A1 (de) * 2007-06-14 2008-12-18 Leonhard Kurz Gmbh & Co. Kg Heißprägen von Strukturen
US20090218651A1 (en) * 2008-02-28 2009-09-03 Sunlight Photonics Inc. Composite substrates for thin film electro-optical devices
CN101482938B (zh) * 2009-01-16 2010-12-29 陈建军 一种无线识别标签的制备方法及其使用的烫印专用膜
WO2010118004A1 (en) * 2009-04-08 2010-10-14 E. I. Du Pont De Nemours And Company Solar cell electrode
WO2010137854A2 (ko) * 2009-05-26 2010-12-02 주식회사 엘지화학 고효율 태양전지 전면 전극의 제조 방법
CN102063951B (zh) * 2010-11-05 2013-07-03 苏州苏大维格光电科技股份有限公司 一种透明导电膜及其制作方法
KR101730184B1 (ko) * 2010-11-08 2017-05-12 삼성전기주식회사 도전성 페이스트 조성물 및 이를 이용한 적층 세라믹 콘덴서의 제조방법
KR101712088B1 (ko) * 2010-11-19 2017-03-06 삼성디스플레이 주식회사 광학시트 및 그 제조 방법
KR101907484B1 (ko) * 2011-07-21 2018-12-05 미래나노텍(주) 터치 스크린 패널 제조 장치 및 제조 방법
CN103640279B (zh) * 2013-12-13 2015-10-28 保定乐凯新材料股份有限公司 一种用于射频识别标签天线的热转印导电薄膜

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1875433A (zh) * 2003-10-28 2006-12-06 住友金属矿山株式会社 透明导电层叠体及其制造方法及使用了该层叠体的器件
JP2010114032A (ja) * 2008-11-10 2010-05-20 Yokohama Rubber Co Ltd:The 光電極の製造方法、光電極、光電変換素子および色素増感太陽電池
CN101562217A (zh) * 2009-05-22 2009-10-21 中国科学院电工研究所 一种太阳电池前电极制备方法
CN102576745A (zh) * 2009-08-06 2012-07-11 三菱电机株式会社 太阳能电池的电极形成方法、太阳能电池的制造方法、太阳能电池
KR20120078875A (ko) * 2011-01-03 2012-07-11 주식회사 엘지화학 태양전지용 전극의 제조방법 및 이로부터 제조된 전극
CN103310991A (zh) * 2012-12-27 2013-09-18 长兴化学工业股份有限公司 薄膜电极及其制法
CN104009124A (zh) * 2014-06-13 2014-08-27 苏州苏大维格光电科技股份有限公司 太阳能电池超精细电极转移薄膜、制备方法及其应用方法

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