CN110299420B - 晶硅太阳能电池的减反射膜沉积方法 - Google Patents
晶硅太阳能电池的减反射膜沉积方法 Download PDFInfo
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- CN110299420B CN110299420B CN201910614574.0A CN201910614574A CN110299420B CN 110299420 B CN110299420 B CN 110299420B CN 201910614574 A CN201910614574 A CN 201910614574A CN 110299420 B CN110299420 B CN 110299420B
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- 238000000151 deposition Methods 0.000 title claims abstract description 90
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 128
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 128
- 239000010703 silicon Substances 0.000 claims abstract description 128
- 238000000034 method Methods 0.000 claims abstract description 72
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- 230000003667 anti-reflective effect Effects 0.000 claims description 12
- 238000009413 insulation Methods 0.000 claims description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 8
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 238000007517 polishing process Methods 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 230000005484 gravity Effects 0.000 claims description 4
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- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
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- 238000011068 loading method Methods 0.000 abstract description 16
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- 238000007747 plating Methods 0.000 abstract description 8
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 29
- 229910002804 graphite Inorganic materials 0.000 description 29
- 239000010439 graphite Substances 0.000 description 29
- 238000006243 chemical reaction Methods 0.000 description 28
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 22
- 239000007789 gas Substances 0.000 description 13
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 11
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 11
- 229910052757 nitrogen Inorganic materials 0.000 description 11
- 229910000077 silane Inorganic materials 0.000 description 11
- 238000000576 coating method Methods 0.000 description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 8
- 239000012495 reaction gas Substances 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 5
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 5
- 229910052753 mercury Inorganic materials 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 4
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
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- 238000000137 annealing Methods 0.000 description 3
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- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 2
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- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000007888 film coating Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
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- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
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- 238000007781 pre-processing Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Sustainable Development (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
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CN110707160B (zh) * | 2019-10-11 | 2021-07-16 | 湖南红太阳光电科技有限公司 | 一种管式直接PECVD制备太阳电池SiC减反射膜的方法 |
CN112795904A (zh) * | 2020-12-29 | 2021-05-14 | 理想晶延半导体设备(上海)股份有限公司 | 应用于管式设备的生产工艺 |
CN112813412A (zh) * | 2020-12-29 | 2021-05-18 | 理想晶延半导体设备(上海)股份有限公司 | 应用于镀膜设备的处理方法 |
CN112813413B (zh) * | 2020-12-29 | 2023-04-11 | 理想晶延半导体设备(上海)股份有限公司 | 应用于管式pecvd沉积设备的生产工艺 |
CN112725766A (zh) * | 2020-12-29 | 2021-04-30 | 理想晶延半导体设备(上海)股份有限公司 | 应用于管式pecvd沉积设备的生产方法 |
CN112670377A (zh) * | 2020-12-29 | 2021-04-16 | 理想晶延半导体设备(上海)股份有限公司 | 异质结太阳能电池处理工艺 |
CN112725768A (zh) * | 2020-12-29 | 2021-04-30 | 理想晶延半导体设备(上海)股份有限公司 | 应用于管式pecvd沉积设备的处理方法 |
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CN203300613U (zh) * | 2013-05-21 | 2013-11-20 | 帆宣系统科技股份有限公司 | 基板的翻转设备 |
CN103515486A (zh) * | 2013-10-25 | 2014-01-15 | 浙江光普太阳能科技有限公司 | 一种板式pecvd制备背面点接触太阳能电池的方法 |
CN103943717B (zh) * | 2014-03-19 | 2017-02-01 | 晶澳(扬州)太阳能科技有限公司 | 一种采用管式pecvd制备太阳能电池叠层减反射膜的方法 |
CN104377154B (zh) * | 2014-11-03 | 2017-11-10 | 江阴方艾机器人有限公司 | 管式pecvd石墨舟装卸片系统及其工艺 |
CN105118801B (zh) * | 2015-09-25 | 2017-11-07 | 西安立芯光电科技有限公司 | 半导体芯片的表面处理系统 |
CN205122625U (zh) * | 2015-11-30 | 2016-03-30 | 新奥光伏能源有限公司 | 一种托盘组件和翻转设备 |
CN105862011B (zh) * | 2016-06-14 | 2018-08-24 | 武汉工程大学 | 一种化学气相沉积设备专用挡板装置 |
CN107658366A (zh) * | 2016-07-26 | 2018-02-02 | 福建钧石能源有限公司 | 一种异质结电池的镀膜方法及pvd载板和镀膜装置 |
CN206624913U (zh) * | 2017-03-03 | 2017-11-10 | 广东爱康太阳能科技有限公司 | 一种pecvd双面沉积设备 |
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Address after: Room 402, building 3, 3255 Sixian Road, Songjiang District, Shanghai, 201602 Patentee after: Ideal semiconductor equipment (Shanghai) Co.,Ltd. Address before: 201620 Shanghai city Songjiang District Sixian Road No. 3255 Building No. 3, B building four floor Patentee before: DEPOSITION EQUIPMENT AND APPLICATIONS (SHANGHAI) Ltd. |
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Denomination of invention: Deposition method of antireflection film for crystalline silicon solar cells Effective date of registration: 20230209 Granted publication date: 20200626 Pledgee: Agricultural Bank of China Limited Shanghai Songjiang Sub-branch Pledgor: Ideal semiconductor equipment (Shanghai) Co.,Ltd. Registration number: Y2023310000023 |