CN103515486A - 一种板式pecvd制备背面点接触太阳能电池的方法 - Google Patents
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Abstract
本发明公开了一种板式PECVD制备背面点接触太阳能电池的方法，包括采用微波法在硅片正面及背面镀SiN薄膜的步骤，石墨框环绕硅片开透气孔，在硅片的背面盖上一个挡板将硅片背面需要留出的点挡住，在对硅片正面镀SiN薄膜的过程中工艺气体透过透气孔也对硅片背面镀SiN薄膜，工艺气体均匀覆盖硅片的正面及背面，同时硅片背面由于挡板作用形成点接触的点。本发明不需要正反面进行两次镀膜，同时省略了背面开孔需要的激光打孔工序，而且同样可以起到背面氮化硅的钝化和大铝背场效果，最终大幅提升太阳能电池的开路电压、短路电流和转换效率。
Description
技术领域
本发明涉及板式PECVD制备背面点接触太阳能电池的方法。
背景技术
现有技术中板式PECVD制备背面点接触太阳能电池的方法包括如下步骤：（1）硅片去损伤层并制绒；（2）P扩散；（3）边缘刻蚀及去磷硅玻璃（PSG）（4）背面氧化铝/氮化硅叠层薄膜生长；（5）正面SiN减反射薄膜生长；（6）背面激光开孔；（7）丝网印刷背银，背铝，正银；（8）烧结，测试。
其存在的缺陷为：（1）背面氧化铝/氮化硅叠层薄膜生长、激光开孔需要添加2台价格昂贵的设备，二次镀膜工艺气体使用量增加，最终导致生产成本增加；（2）两次镀膜和激光开孔对硅片的内部损伤很大，影响电池片效率；（3）激光开孔硅片碎片率很高。
发明内容
本发明所要解决的技术问题就是提供一种板式PECVD制备背面点接触太阳能电池的方法，简化工艺，降低成本，降低能耗，提升转换效率。
为解决上述技术问题，本发明采用如下技术方案：一种板式PECVD制备背面点接触太阳能电池的方法，包括采用微波法在硅片正面及背面镀SiN薄膜的步骤，石墨框环绕硅片开透气孔，在硅片的背面盖上一个挡板将硅片背面需要留出的点挡住，在对硅片正面镀SiN薄膜的过程中工艺气体透过透气孔也对硅片背面镀SiN薄膜，工艺气体均匀覆盖硅片的正面及背面，同时硅片背面由于挡板作用形成点接触的点。
优选的，所述透气孔呈蜂窝状分布。
本发明在石墨框四周开设透气孔，使得工艺气体能均匀覆盖硅片的正反两面，通过微波法PECVD（Roth&rau）在硅片的正反面形成均匀的等离子体，同时在硅片的背面盖上一个挡板将背面硅片需要留出的点挡住，这样可以一次性在硅片正反面都镀上SiN薄膜，同时背面由于挡板作用形成了点接触的点。
该发明不需要正反面进行两次镀膜，同时省略了背面开孔需要的激光打孔工序，而且同样可以起到背面氮化硅的钝化和大铝背场效果，最终大幅提升太阳能电池的开路电压、短路电流和转换效率。
附图说明
下面结合附图和具体实施方式对本发明作进一步描述：
图1为石墨框开透气孔结构示意图；
图2为硅片背面设置挡板结构示意图。
具体实施方式
下面结合图1和图2对本发明做出具体说明。一种板式PECVD制备背面点接触太阳能电池的方法，包括采用微波法在硅片正面及背面镀SiN薄膜的步骤，其他步骤与现有技术相同。
具体的，石墨框1环绕硅片2开透气孔3，在硅片的背面盖上一个挡板4将硅片背面需要留出的点5挡住，在对硅片正面镀SiN薄膜的过程中工艺气体透过透气孔也对硅片背面镀SiN薄膜，工艺气体均匀覆盖硅片的正面及背面，同时硅片背面由于挡板作用形成点接触的点。
本发明的优点：
1、工艺相对简单，容易批量生产，不需要增加任何新的设备(200万)，降低了能耗，降低了生产成本；
2、电池片转换效率提升0.3%以上，一片电池片可以提升功率0.0464W，按照现在3元/瓦计算，一片可以增收0.139元，一个月两条线以150万片产量计算可以增收0.139*150万=20.85万元，一年可以增收20.85*12=250.2万元。
Claims (2)
1.一种板式PECVD制备背面点接触太阳能电池的方法，包括采用微波法在硅片正面及背面镀SiN薄膜的步骤，其特征在于：石墨框环绕硅片开透气孔，在硅片的背面盖上一个挡板将硅片背面需要留出的点挡住，在对硅片正面镀SiN薄膜的过程中工艺气体透过透气孔也对硅片背面镀SiN薄膜，工艺气体均匀覆盖硅片的正面及背面，同时硅片背面由于挡板作用形成点接触的点。
2.根据权利要求1所述的板式PECVD制备背面点接触太阳能电池的方法，其特征在于：所述透气孔呈蜂窝状分布。
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107068790A (zh) * | 2017-03-03 | 2017-08-18 | 广东爱康太阳能科技有限公司 | P型perc太阳能电池的制备方法、电池、组件和系统 |
| CN110299420A (zh) * | 2019-07-09 | 2019-10-01 | 理想晶延半导体设备（上海）有限公司 | 晶硅太阳能电池的减反射膜沉积方法 |
| CN110983296A (zh) * | 2019-12-04 | 2020-04-10 | 江苏菲沃泰纳米科技有限公司 | 支撑结构、支架、镀膜设备和应用 |
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| CN110983296A (zh) * | 2019-12-04 | 2020-04-10 | 江苏菲沃泰纳米科技有限公司 | 支撑结构、支架、镀膜设备和应用 |
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