CN104465885A - 全背电极太阳能电池形成局域金属化的生产方法 - Google Patents
全背电极太阳能电池形成局域金属化的生产方法 Download PDFInfo
- Publication number
- CN104465885A CN104465885A CN201410811692.8A CN201410811692A CN104465885A CN 104465885 A CN104465885 A CN 104465885A CN 201410811692 A CN201410811692 A CN 201410811692A CN 104465885 A CN104465885 A CN 104465885A
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- metal
- passivating film
- solar cell
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000001465 metallisation Methods 0.000 title abstract 2
- 239000002184 metal Substances 0.000 claims abstract description 70
- 239000011267 electrode slurry Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 21
- 238000002360 preparation method Methods 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 30
- 229910052710 silicon Inorganic materials 0.000 claims description 30
- 239000010703 silicon Substances 0.000 claims description 30
- 238000005187 foaming Methods 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 29
- 235000008216 herbs Nutrition 0.000 claims description 22
- 210000002268 wool Anatomy 0.000 claims description 22
- 239000002002 slurry Substances 0.000 claims description 16
- 238000004513 sizing Methods 0.000 claims description 15
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 12
- 229910052796 boron Inorganic materials 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 9
- 238000002161 passivation Methods 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 5
- 238000007639 printing Methods 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 3
- 241001466460 Alveolata Species 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410811692.8A CN104465885B (zh) | 2014-12-23 | 2014-12-23 | 全背电极太阳能电池形成局域金属化的生产方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410811692.8A CN104465885B (zh) | 2014-12-23 | 2014-12-23 | 全背电极太阳能电池形成局域金属化的生产方法 |
Publications (2)
Publication Number | Publication Date |
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CN104465885A true CN104465885A (zh) | 2015-03-25 |
CN104465885B CN104465885B (zh) | 2017-01-25 |
Family
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Family Applications (1)
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CN201410811692.8A Active CN104465885B (zh) | 2014-12-23 | 2014-12-23 | 全背电极太阳能电池形成局域金属化的生产方法 |
Country Status (1)
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CN (1) | CN104465885B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106229358A (zh) * | 2016-09-22 | 2016-12-14 | 东莞市联洲知识产权运营管理有限公司 | 一种高效的太阳能电池 |
CN106252449A (zh) * | 2016-08-26 | 2016-12-21 | 泰州中来光电科技有限公司 | 局部掺杂前表面场背接触电池及其制备方法和组件、系统 |
CN106784152A (zh) * | 2016-12-29 | 2017-05-31 | 英利能源(中国)有限公司 | 一种ibc电池的制备方法 |
CN109103298A (zh) * | 2018-08-21 | 2018-12-28 | 国家电投集团西安太阳能电力有限公司 | 一种基于自对准工艺的ibc太阳能电池的制备方法 |
CN113130709A (zh) * | 2021-04-20 | 2021-07-16 | 浙江师范大学 | 基于局部纳米针孔接触的硅太阳能电池及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011136116A1 (ja) * | 2010-04-27 | 2011-11-03 | シャープ株式会社 | 裏面電極型太陽電池および裏面電極型太陽電池の製造方法 |
WO2013050556A1 (en) * | 2011-10-07 | 2013-04-11 | Imec | Method of manufacturing a solar cell with local back contacts |
CN103594564A (zh) * | 2013-12-03 | 2014-02-19 | 常州天合光能有限公司 | 全背电极太阳能电池的制作方法及全背电极太阳能电池 |
-
2014
- 2014-12-23 CN CN201410811692.8A patent/CN104465885B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011136116A1 (ja) * | 2010-04-27 | 2011-11-03 | シャープ株式会社 | 裏面電極型太陽電池および裏面電極型太陽電池の製造方法 |
WO2013050556A1 (en) * | 2011-10-07 | 2013-04-11 | Imec | Method of manufacturing a solar cell with local back contacts |
CN103594564A (zh) * | 2013-12-03 | 2014-02-19 | 常州天合光能有限公司 | 全背电极太阳能电池的制作方法及全背电极太阳能电池 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106252449A (zh) * | 2016-08-26 | 2016-12-21 | 泰州中来光电科技有限公司 | 局部掺杂前表面场背接触电池及其制备方法和组件、系统 |
CN106252449B (zh) * | 2016-08-26 | 2017-09-26 | 泰州中来光电科技有限公司 | 局部掺杂前表面场背接触电池及其制备方法和组件、系统 |
CN106229358A (zh) * | 2016-09-22 | 2016-12-14 | 东莞市联洲知识产权运营管理有限公司 | 一种高效的太阳能电池 |
CN106784152A (zh) * | 2016-12-29 | 2017-05-31 | 英利能源(中国)有限公司 | 一种ibc电池的制备方法 |
CN109103298A (zh) * | 2018-08-21 | 2018-12-28 | 国家电投集团西安太阳能电力有限公司 | 一种基于自对准工艺的ibc太阳能电池的制备方法 |
CN113130709A (zh) * | 2021-04-20 | 2021-07-16 | 浙江师范大学 | 基于局部纳米针孔接触的硅太阳能电池及其制备方法 |
CN113130709B (zh) * | 2021-04-20 | 2022-08-23 | 浙江师范大学 | 基于局部纳米针孔接触的硅太阳能电池及其制备方法 |
Also Published As
Publication number | Publication date |
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CN104465885B (zh) | 2017-01-25 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: TRINA SOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: trina solar Ltd. |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: trina solar Ltd. Address before: Tianhe Electronic Industrial Park Road 213022 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |