CN103594564A - 全背电极太阳能电池的制作方法及全背电极太阳能电池 - Google Patents
全背电极太阳能电池的制作方法及全背电极太阳能电池 Download PDFInfo
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- CN103594564A CN103594564A CN201310635112.XA CN201310635112A CN103594564A CN 103594564 A CN103594564 A CN 103594564A CN 201310635112 A CN201310635112 A CN 201310635112A CN 103594564 A CN103594564 A CN 103594564A
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- 238000002161 passivation Methods 0.000 claims abstract description 109
- 239000002184 metal Substances 0.000 claims abstract description 103
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 68
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 68
- 239000010703 silicon Substances 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 238000000034 method Methods 0.000 claims abstract description 49
- 239000002002 slurry Substances 0.000 claims abstract description 11
- 238000005245 sintering Methods 0.000 claims abstract description 8
- 238000009792 diffusion process Methods 0.000 claims description 19
- 230000003647 oxidation Effects 0.000 claims description 19
- 238000007254 oxidation reaction Methods 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 11
- 229910004205 SiNX Inorganic materials 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 238000003475 lamination Methods 0.000 claims description 6
- 239000000243 solution Substances 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 239000003513 alkali Substances 0.000 claims description 3
- 239000012670 alkaline solution Substances 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 235000008216 herbs Nutrition 0.000 claims description 3
- 238000000608 laser ablation Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 210000002268 wool Anatomy 0.000 claims description 3
- 230000007704 transition Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
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- 238000001465 metallisation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Electromagnetism (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Life Sciences & Earth Sciences (AREA)
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Abstract
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Priority Applications (1)
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CN201310635112.XA CN103594564B (zh) | 2013-12-03 | 2013-12-03 | 全背电极太阳能电池的制作方法及全背电极太阳能电池 |
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CN201310635112.XA CN103594564B (zh) | 2013-12-03 | 2013-12-03 | 全背电极太阳能电池的制作方法及全背电极太阳能电池 |
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CN103594564A true CN103594564A (zh) | 2014-02-19 |
CN103594564B CN103594564B (zh) | 2016-03-02 |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104183657A (zh) * | 2014-09-03 | 2014-12-03 | 常州天合光能有限公司 | 晶体硅太阳能电池交替式金属前电极及其制备方法 |
CN104465885A (zh) * | 2014-12-23 | 2015-03-25 | 常州天合光能有限公司 | 全背电极太阳能电池形成局域金属化的生产方法 |
CN104485390A (zh) * | 2014-12-24 | 2015-04-01 | 常州天合光能有限公司 | 一种全背电极太阳能电池的生产方法 |
CN105244392A (zh) * | 2015-11-09 | 2016-01-13 | 常州天合光能有限公司 | 一种用于汽车车顶棚提高阴影遮挡可靠性的光伏电池及其制备方法 |
CN109743846A (zh) * | 2018-09-27 | 2019-05-10 | 常州市武进三维电子有限公司 | 新能源汽车的镂空柔性线路板的制作工艺 |
CN111403494A (zh) * | 2018-12-28 | 2020-07-10 | 北京铂阳顶荣光伏科技有限公司 | 一种背电极结构、太阳能电池及其制备方法 |
CN113823704A (zh) * | 2021-11-23 | 2021-12-21 | 陕西众森电能科技有限公司 | 一种p基硅背接触太阳能电池及其制备方法 |
CN114765231A (zh) * | 2020-12-30 | 2022-07-19 | 苏州阿特斯阳光电力科技有限公司 | 光伏电池及其制备方法 |
CN115241298A (zh) * | 2022-02-25 | 2022-10-25 | 浙江晶科能源有限公司 | 太阳能电池及其制备方法、光伏组件 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120094421A1 (en) * | 2010-10-15 | 2012-04-19 | Kim Myung Su | Method of manufacturing solar cell |
CN102971859A (zh) * | 2010-04-27 | 2013-03-13 | 夏普株式会社 | 背面电极型太阳能电池及背面电极型太阳能电池的制造方法 |
WO2013050556A1 (en) * | 2011-10-07 | 2013-04-11 | Imec | Method of manufacturing a solar cell with local back contacts |
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2013
- 2013-12-03 CN CN201310635112.XA patent/CN103594564B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102971859A (zh) * | 2010-04-27 | 2013-03-13 | 夏普株式会社 | 背面电极型太阳能电池及背面电极型太阳能电池的制造方法 |
US20120094421A1 (en) * | 2010-10-15 | 2012-04-19 | Kim Myung Su | Method of manufacturing solar cell |
WO2013050556A1 (en) * | 2011-10-07 | 2013-04-11 | Imec | Method of manufacturing a solar cell with local back contacts |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104183657A (zh) * | 2014-09-03 | 2014-12-03 | 常州天合光能有限公司 | 晶体硅太阳能电池交替式金属前电极及其制备方法 |
CN104465885A (zh) * | 2014-12-23 | 2015-03-25 | 常州天合光能有限公司 | 全背电极太阳能电池形成局域金属化的生产方法 |
CN104465885B (zh) * | 2014-12-23 | 2017-01-25 | 常州天合光能有限公司 | 全背电极太阳能电池形成局域金属化的生产方法 |
CN104485390A (zh) * | 2014-12-24 | 2015-04-01 | 常州天合光能有限公司 | 一种全背电极太阳能电池的生产方法 |
CN105244392A (zh) * | 2015-11-09 | 2016-01-13 | 常州天合光能有限公司 | 一种用于汽车车顶棚提高阴影遮挡可靠性的光伏电池及其制备方法 |
CN109743846A (zh) * | 2018-09-27 | 2019-05-10 | 常州市武进三维电子有限公司 | 新能源汽车的镂空柔性线路板的制作工艺 |
CN109743846B (zh) * | 2018-09-27 | 2021-08-20 | 常州市武进三维电子有限公司 | 新能源汽车的镂空柔性线路板的制作工艺 |
CN111403494A (zh) * | 2018-12-28 | 2020-07-10 | 北京铂阳顶荣光伏科技有限公司 | 一种背电极结构、太阳能电池及其制备方法 |
CN114765231A (zh) * | 2020-12-30 | 2022-07-19 | 苏州阿特斯阳光电力科技有限公司 | 光伏电池及其制备方法 |
CN113823704A (zh) * | 2021-11-23 | 2021-12-21 | 陕西众森电能科技有限公司 | 一种p基硅背接触太阳能电池及其制备方法 |
CN115241298A (zh) * | 2022-02-25 | 2022-10-25 | 浙江晶科能源有限公司 | 太阳能电池及其制备方法、光伏组件 |
CN115241298B (zh) * | 2022-02-25 | 2023-10-31 | 浙江晶科能源有限公司 | 太阳能电池及其制备方法、光伏组件 |
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Inventor after: Li Zhonglan Inventor after: Yang Yang Inventor after: Zhang Xueling Inventor after: WELLINGTON.PUEL.J Inventor after: Ding Jianning Inventor after: Gao Jifan Inventor before: Li Zhonglan Inventor before: Yang Yang Inventor before: Zhang Xueling Inventor before: WELLINGTON.PUEL.J |
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Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: TRINASOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: trina solar Ltd. |
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Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: trina solar Ltd. Address before: Tianhe Electronic Industrial Park Road 213022 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |