CN110277353A - 用于芯片封装的交联热塑性电介质 - Google Patents
用于芯片封装的交联热塑性电介质 Download PDFInfo
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- CN110277353A CN110277353A CN201910186959.1A CN201910186959A CN110277353A CN 110277353 A CN110277353 A CN 110277353A CN 201910186959 A CN201910186959 A CN 201910186959A CN 110277353 A CN110277353 A CN 110277353A
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Classifications
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Abstract
一种封装(100),包括电子芯片(108)和包括高度填充的交联热塑性材料(106)的介电结构(104)。
Description
技术领域
本发明涉及封装和制造封装的方法。
背景技术
例如用于汽车应用的封装为包括一个或多个集成电路元件的一个或多个电子芯片提供物理封闭。封装的集成电路元件的示例是场效应晶体管、绝缘栅双极晶体管(IGBT)、二极管和无源部件(诸如电感、电容、电阻器)。而且,这种封装可用于生产系统级封装。
为了制造封装,可以通过适当的密封材料来包封至少一个电子芯片。为此目的,可固化环氧树脂在许多情况下用作密封材料。这样的优点在于它是适当的可加工和机械稳定的。
然而,仍然存在改进封装可靠性的潜在空间,特别是在封装的密封材料或另一介电结构的性质方面。
发明内容
需要具有适当电可靠性同时具有机械和热稳固性的芯片封装。
根据示例性实施例,提供了一种封装,其包括电子芯片和介电结构,该介电结构包括高度填充的交联热塑性材料(具体地填充有填料颗粒)。
根据另一示例性实施例,提供了一种封装,其包括芯片载体、安装在芯片载体上的电子芯片、以及覆盖芯片载体和电子芯片中的至少一个的至少部分并且包括光学不透明的交联热塑性材料的介电结构。
根据另一示例性实施例,提供了一种制造封装的方法,其中该方法包括将电子芯片安装在芯片载体上,以及通过交联高度填充的热塑性材料形成覆盖芯片载体和电子芯片中的至少一个的至少部分的介电结构。
根据又一示例性实施例,提供了一种制造封装的方法,其中该方法包括通过交联不透明的热塑性材料形成覆盖电子芯片(和/或其上可安装芯片的芯片载体)的至少一部分的介电结构。
根据示例性实施例,采用高度填充的交联热塑性材料作为芯片封装的介电结构。这种可用于例如密封材料和/或介电层的电绝缘材料协同地结合了许多技术优点。一方面,与诸如环氧树脂的常规材料相比,热塑性材料允许显著降低介电材料中的湿度。同时,与常规的可固化环氧树脂相比,这种材料的电绝缘特性可以得到显著改善。这显著改善了封装的电可靠性,特别是提高了封装的介电强度。通过特别地和人工地触发这种热塑性材料的交联(其本身不在热塑性材料中发生),可以改善介电材料的机械稳定性和热稳定性。描述性地说,热塑性材料的交联链可以在机械稳定性和热稳定性方面允许结合热固性材料的有利性质,同时改善电可靠性和防潮性。
非常有利地,除了交联的热塑性材料之外,这种介电结构可以包括大量的填充颗粒,其允许根据芯片封装功能特别地适应调整介电结构的特性。结果,提供高度填充的交联热塑性塑料作为用于高性能芯片封装应用的介电结构。
还有利地,包括交联热塑性材料的介电结构可以是不透明的。已经证明,对于许多电子应用,特别是对于功率半导体应用,相当大量的可见光到封装内部的传播可能在那里引发不希望的反应和影响,并因此可能干扰电子功能。通过使介电结构基本上光学不透明,可以改善封装的电可靠性和封装的操作。特别地,使介电结构基本上不透明可以安全地防止芯片封装遭受辐射引发的电子误操作。
进一步示例性实施例的描述
在下文中,将解释封装和方法的进一步示例性实施例。
在本申请的上下文中,术语“封装”可以特别地表示至少一个部分或完全包封和/或涂覆的电子芯片,其具有至少一个直接或间接的外部电触点。
在本申请的上下文中,术语“电子芯片”可以特别地表示提供电子功能的芯片(更具体地是半导体芯片)。电子芯片可以是有源电子部件。在一个实施例中,电子芯片被配置为控制器芯片、处理器芯片、存储器芯片、传感器芯片或微机电系统(MEMS)。在替代实施例中,电子芯片也可以配置为功率半导体芯片。因此,电子芯片(例如半导体芯片)可以用于例如汽车领域中的功率应用,并且可以例如具有至少一个集成绝缘栅双极晶体管(IGBT)和/或至少一个另一类型的晶体管(例如MOSFET、JFET等)和/或至少一个集成二极管。这种集成电路元件可以例如以硅技术或基于宽带隙半导体(例如碳化硅、氮化镓或硅上氮化镓)制成。半导体功率芯片可以包括一个或多个场效应晶体管、二极管、反相器电路、半桥、全桥、驱动器、逻辑电路、其他器件等。电子芯片可以是裸管芯或者可以已经封装或者包封。
在本申请的上下文中,术语“芯片载体”可以特别地表示至少部分导电的结构,其同时用作一个或多个电子芯片的安装基座并且还有助于电子芯片与封装的电子环境的电连接。换言之,芯片载体可以实现机械支撑功能和电连接功能。载体的优选实施例是引线框架。
在本申请的上下文中,术语“热塑性材料”可以特别地表示塑料材料,特别是聚合物,其在特定温度以上变得熔融、可流动或可模塑并在冷却时固化。热塑性材料的聚合物链通过分子间力相关联,分子间力随着温度升高而迅速减弱,从而产生粘性液体,和/或通过各个聚合物链的机械缠结相关联。因此,热塑性塑料可以通过加热再成形,并且可以经受聚合物处理技术,例如注塑或压塑。热塑性塑料不同于热固性聚合物(例如可固化的环氧树脂),其在固化过程期间形成不可逆的化学键。因此,热固性塑料和热塑性塑料具有极为不同的性质。物理差异在于热塑性塑料可以重新熔化成为液体,而热固性塑料则保持永久固态。热固性塑料包含具有基团的化学反应性结构的聚合物,基团在固化过程期间交联在一起以形成不可逆的化学键。热塑性塑料在加热时会变软,并在施加额外热量时变得流动性更强。固化过程是完全可逆的,因为不会发生化学键合。
在本申请的上下文中,术语“交联材料”可以特别地表示包含交联的材料。术语交联可以表示将一个聚合物链与另一个聚合物链连接的键。它们可以是共价键或离子键。当术语“交联”用于(特别是合成的)聚合物领域时,它可以指使用交联以促进聚合物物理性质的差异。
在本申请的上下文中,术语“交联的热塑性材料”可以特别地表示已经过特殊处理以便在热塑性材料的链之间形成交联的热塑性材料。描述性地说,这种交联的热塑性材料可以是具有热塑性并具有热固性的混合结构。与纯热固性材料相比,热塑性材料本征地不进行交联。然而,通过施加能量波束(特别是高能电子束)和/或通过添加官能化的交联剂(例如过氧化物)以迫使热塑性材料的链交联可以引发热塑性材料形成交联链。
在本申请的上下文中,术语“高度填充的材料”可以特别地表示包括交联的热塑性材料的基质的介电材料,该基质填充有相当大量的颗粒和添加剂。特别地,高度填充的材料的填充颗粒的部分重量或体积可以大于热塑性材料的基质的部分重量或体积。可以添加填充颗粒以调整或调节介电结构的性质,特别是提供导热性、增加机械稳定性、促进粘合等。
在本申请的上下文中,术语“光学不透明材料”可以特别地表示至少对于可见光而言基本上不透明的材料。因此,这种光学不透明材料可以防止可见光传播通过光学不透明材料。
在一个实施例中,交联的热塑性材料包括通过交联结构连接的链。术语“交联结构”可以特别地表示连接热塑性材料的不同链并且作为在制造介电结构期间添加的交联剂(例如过氧化物)的反应产物而获得的化学化合物。换言之,由于交联剂和热塑性材料的链之间的交联反应,可以形成交联结构。
在一个实施例中,交联的热塑性材料的交联度在2%至90%的范围之间,特别地在5%至50%的范围之间。交联度可表示交联的热塑性材料链中重复单体单元的百分比。利用所提到的范围,用于上述的并通过触发热塑性材料的交联而获得的封装的介电结构的有利性质可以是非常显著的。
在一个实施例中,介电结构包括填料颗粒,特别是相对于介电结构的总重量包括至少50重量百分比的填料颗粒,更特别地相对于介电结构的总重量包括80重量百分比至95重量百分比的范围之间的填料颗粒。具有非常有利的性质的介电结构已经可以用非常少量的交联热塑性材料获得,例如已经为5重量百分比。因此,电路设计者可以高度自由地添加各种类型和大量的填料颗粒和添加剂,而不会损害芯片封装的性能,特别是对于功率半导体应用。
在一个实施例中,填料颗粒包括由以下组成的至少一组:高导热填料颗粒(特别是氧化铝(Al2O3)颗粒、氮化铝(AlN)颗粒、氧化硅(SiO2)颗粒和氮化硼(BN)颗粒中的至少一种)、着色剂(特别是用于获得不透明或黑色封装的炭黑、或用于获得白色封装的二氧化钛(TiO2))、粘合促进剂(特别是基于硅烷的)和催化剂(用于加速化学反应,例如加速交联)。另外或可替代地,可以将许多其他类型的填料颗粒和/或添加剂添加到热塑性材料中以促进其至少一种物理性质,例如机械稳定性。例如,还可以添加填料颗粒或添加剂,其调整介电结构相对于电子芯片的材料(特别是硅)和/或相对于芯片载体的材料(特别是在引线框架的情况下为铜)的热膨胀系数的值。
在一个实施例中,介电结构基本上是不透明的,特别是具有小于2%的光学透明度。在本申请的上下文中,术语“光学透明度”可以特别地表示透过介电结构的可见光强度除以提供给介电结构的可见光强度之间的比率。特别地,介电结构可以吸收和/或反射至少98%的所提供光强度。因此,可以在很大程度上防止可见光(即,波长范围为400nm至800nm的电磁辐射)传播到封装中。这可以稳定封装的功能并且可以抑制不期望的假象。
在一个实施例中,介电结构具有至少0.5W/(mK),特别地至少1W/(mK)的导热率值。通过添加具有足够高的热稳定性的相应填料颗粒,可以获得如此高的导热率值。结果,在封装内部产生的热量,例如在操作电子芯片(特别是功率半导体芯片)期间消散的热量可以经由介电结构有效地从封装中移除。因此,介电结构也可以有助于封装的热性能。
在一个实施例中,介电结构被配置为密封材料,其至少部分地包封电子芯片和载体中的至少一个。这对于例如保护诸如GaN/SiC器件的敏感器件可能是有利的。在本申请的上下文中,术语“密封材料”可以特别地表示围绕电子芯片和/或芯片载体的一部分的基本上电绝缘且优选导热的材料,以提供机械保护、电绝缘,并且可选地在操作期间对热消除有贡献。这种密封材料可以是例如模塑化合物。对于通过模塑的包封,可以使用交联的热塑性材料,如本文所述。填料颗粒(例如SiO2、Al2O3、Si3N4、BN、AlN、金刚石等),例如用于改善导热性,可以被嵌入密封材料的基于塑料的基质中。
在一个实施例中,封装包括至少包封密封材料的至少一部分的另外的密封材料。特别地,另外的密封材料可以包括热固性材料,例如环氧基材料和/或硅基材料。因此,这种另外的密封材料可以由热固性材料制成,以便整体上为封装增加高度的机械稳定性。可替换地,另外的密封材料也可以包括另外的高度填充和/或不透明的交联热塑性材料或由其组成。
在一个实施例中,介电结构是覆盖电子芯片和载体中的至少一个的至少一部分的层结构。例如,这种层结构可以是连续层或图案化层。这种层结构可以特别地应用在封装的局部需要可靠的电绝缘的一部分。介电结构的有利性质(高度机械可靠性和电可靠性,同时通过自由选择大量填料颗粒和添加剂允许特别地解决介电结构的性质)使得我们也获得了用于覆盖封装的某个部分的层结构。
在一个实施例中,层结构由散热器覆盖。例如,这种散热器可以是高导热体,例如铜板或铝板,或者是一种或多种金属的合金。散热器也可以是其上附着有一组散热片用以有效散热的高导热体。在一个实施例中,承载电子芯片并延伸到密封材料之外的芯片载体(例如引线框架)的一部分可以用层型介电结构覆盖。在这样的实施例中,非常有利的是,介电结构的材料是可靠的电绝缘体(用于防止经由介电结构的电短路)和/或具有足够高的导热率(用于显著地有助于将例如在操作期间由一个或多个电子芯片产生的热量从封装内部去除)。
在一个实施例中,层结构被布置成使载体的不同导电部分彼此电绝缘。有利地,介电结构的各部分(例如彼此不连接的岛)可以施加在芯片载体的不同部分之间(特别是不同的引线、管芯焊盘等),以确保在这样的部分之间可靠的电绝缘。
在一个实施例中,介电结构被配置为在至少高达260℃,特别地在至少高达300℃,更特别地在至少高达350℃是热稳定的。在许多封装应用中,封装通过焊接连接到诸如印刷电路板的安装基座。在焊接期间,通常可能出现约250℃的温度。当介电结构至少在这样的温度下并且优选地高于该温度下是热稳定的时,可以安全地防止焊接期间的任何不期望的熔化或分层或损坏现象。由此可以显著改善封装的寿命和可靠性。所提及的高热稳定性可以通过交联热塑性材料和任选地提供有助于热稳定性的填料颗粒来获得。
在一个实施例中,热塑性材料包括以下组成的组中的至少一种:聚酰胺、聚醚醚酮、聚对苯二甲酸乙二醇酯、聚对苯二甲酸丁二醇酯、聚酰亚胺、聚砜、高密度聚乙烯、聚甲醛、聚丙烯和聚苯乙烯。因而,鉴于其有限的热机械稳定性,这样的热塑性材料本身不适用于芯片封装,特别是不适用于功率半导体应用。然而,当交联热塑性材料时,可以通过组合热塑性材料和热固性材料的有利性质来获得所需的性质。通过向提及交联的热塑性材料中添加填料颗粒,可以进一步改善(特别是功率)芯片封装的物理性质和可用性。
在一个实施例中,所述至少一个电子芯片包括半导体芯片,特别是功率半导体芯片。特别地,当至少一个电子芯片是功率半导体芯片时,在封装操作期间产生的大量热量可能导致热负荷作用在封装的电气和机械接口上。然而,由于本文公开的介电结构,即使在这种苛刻的条件下也可以防止封装的损坏。
在一个实施例中,电子芯片包含至少一个,特别是至少三个或至少八个晶体管(诸如场效应晶体管,特别是金属氧化物半导体场效应晶体管)。通常,电子芯片可包括许多晶体管。
在一个实施例中,载体包括引线框架和/或陶瓷片,其用相应的金属层覆盖在两个相对的主表面上(特别是直接铝键合(DAB)衬底和/或直接铜键合(DCB)衬底)。
在一个实施例中,载体是引线框架。这种引线框架可以是片状金属结构,其可以被图案化以形成一个或多个安装部分以用于安装封装的一个或多个电子芯片,以及一个或多个引线部分以用于当电子芯片安装在引线框架上时将封装电连接到电子环境。在一个实施例中,引线框架可以是金属板(特别是由铜制成),其可以被图案化,例如通过冲压或蚀刻。将芯片载体形成为引线框架是节约成本且机械以及电气上非常有利的配置,其中至少一个电子芯片的低欧姆连接可以与引线框架的稳健支撑能力相结合。此外,引线框架可以有助于封装的导热性,并且由于引线框架的金属(特别是铜)材料的高导热性而可以消除在电子芯片操作期间产生的热量。
但是,也可以实施其他载体。例如,直接铜键合衬底(DCB衬底)或直接铝键合衬底(DAB衬底)可被使用以及用于载体的基础。
在一个实施例中,该方法包括通过向热塑性材料中添加交联剂并通过(例如热)活化交联剂来引发交联。交联可以表示为通过化学(特别是共价)键化学连接两个或更多个分子或链的过程。相应地,交联剂可以表示为引发热塑性材料交联的物质。例如,交联剂包括过氧化物、偶氮结构和硅烷组成的组中的至少一种。然而,也可以实施其他交联剂。
在一个实施例中,该方法包括通过加热,特别是熔化热塑性材料和交联剂的混合物来活化交联剂,以引发交联。因此,已经预先形成的热塑性材料(例如上述聚合物组中的一种或多种)和交联剂(例如上述组中的一种或多种)的混合物可以被液化以热引发交联。液化混合物可以例如供应到处理室(例如模具)中以引发交联并形成覆盖电子芯片的至少一部分和/或芯片载体的至少一部分的介电结构。因此,交联和形成固化的介电结构的过程可以同时进行,并因此以高效的方式进行。
除了提供一种或多种交联剂之外或作为替代,该方法还可包括通过用能量波束,特别是高能电子束照射(例如已经硬化的)热塑性材料来引发交联。换言之,交联可以由传播到热塑性材料并且被配置以便引发其交联的电子束或电磁辐射束引发。因此可以通过辐射化学来引发交联,使得通过辐射化学地改变热塑性材料。因此,辐射可用于交联热塑性材料,特别是其聚合物。在将热塑性材料供应到处理室(例如模塑工具)以覆盖至少一个电子芯片的至少一部分和/或芯片载体的至少一部分之前、期间或之后,可以将能量波束照射到热塑性材料上。
在一个实施例中,形成介电结构包括由模塑(特别是注塑)、涂覆和浇铸组成的组中的至少一种。模塑可以表示为通过使用刚性框架使液体或柔韧的原材料成形来制造的过程,该刚性框架可以表示为模具。模具可以是挖空的块或一组工具,其内部中空容积填充有液体或柔韧材料。液体在模具内部硬化,从而采用其形状。
在一个实施例中,封装包括至少一个导电连接元件,特别是接合线、接合带和夹子中的至少一个,将电子芯片与载体电连接,特别是与引线框架的引线部分电连接。夹子可以是三维弯曲板型连接元件,其具有两个平面部分,该两个平面部分连接到相应电子芯片的上主表面和芯片载体的上主表面,其中,两个提到的平面部分通过倾斜的连接部分互连。作为这种夹子的替代方案,可以使用接合线或接合带,其是柔性导电线或带状体,其一端部分连接到相应芯片的上主表面并且相对的另一端部分电连接到芯片载体。在密封材料内,导电连接可以由连接元件形成,该连接元件在一方面安装在载体的安装部分上的芯片的上主表面上的芯片焊盘与另一方面载体的引线部分之间。
作为形成电子芯片基础的衬底或晶圆,可以使用半导体衬底,优选硅衬底。可替换地,可以提供氧化硅或另一种绝缘体衬底。还可以实施锗衬底或III-V半导体材料。例如,示例性实施例可以以GaN或SiC技术实现。
此外,示例性实施例可以利用标准半导体处理技术,例如适当的蚀刻技术(包括各向同性和各向异性蚀刻技术,特别是等离子蚀刻、干法蚀刻、湿法蚀刻)、图案化技术(可能涉及光刻掩模)、沉积技术(例如化学气相沉积(CVD)、等离子体增强化学气相沉积(PECVD)、原子层沉积(ALD)、溅射等)。
结合附图,通过以下描述和所附权利要求,本发明的上述和其他目的、特征和优点将变得显而易见,其中相似的部件或元件由相似的附图标记表示。
附图说明
附图示出了示例性实施例,附图被包括以提供对示例性实施例的进一步理解并构成说明书的一部分。
在图中:
图1示出了根据示例性实施例的封装的预成型件的截面图。
图2示出了根据示例性实施例的根据图1制造的封装的截面图。
图3示出了根据另一示例性实施例的封装的截面图。
图4示出了根据又一示例性实施例的封装的截面图。
图5示出了根据再一示例性实施例的封装的截面图。
具体实施方式
附图中的图示是示意性的。
在进一步详细说明其他示例性实施例之前,将总结本发明的一些基本构思,已经基于其开发了示例性实施例。
根据示例性实施例,提供了用于芯片封装(特别是半导体封装)的基于聚合物的介电结构,其允许获得低吸湿性、高机械稳定性和/或高电绝缘性(特别是高击穿强度)。进一步期望获得用于这种聚合物在半导体封装中应用的高UPH。
通常,热固性材料(优选的环氧树脂)用于形成用于半导体器件封装的介电结构。这种热固性材料通过施加热量原位形成,以使这些材料能够交联和硬化,从而为它们提供其热固性质。然而,这种热固性材料的缺点通常是高吸湿性、有限且小的工艺温度范围(约150℃至200℃)、有限的绝缘强度、在可靠性期间器件上的高应力水平以及基于在转移模塑期间在模具腔内的相当高的固化时间的有限UPH。此外,难以或不可能在有机溶剂中溶解热固性聚合物,因此很难实现从液体作为薄膜或层涂敷。
示例性实施例的要点是对于芯片封装(特别是用于半导体封装)使用热塑性聚合物,其可以与硬化剂(也可以表示为交联剂)混合用于交联和/或可以通过随后的电子辐射交联,以使热塑性聚合物在交联的热塑性材料中转移,该热塑性材料具有热固性材料性质和由于热塑性特征而具有的附加有利性质。例如,相应的介电结构可用于包封、涂层或电绝缘层。非常有利地,这种介电结构可以用高百分比的填料颗粒和添加剂制造,填料颗粒和添加剂可自由选择并可与交联的热塑性材料组合以调节介电结构的性质。例如,可以通过添加一种或多种着色剂(如黑碳)来提升介电结构的光学不透明性质。这种光学不透明性改善了芯片封装的电性能。还可有利地以大量添加填料颗粒来例如用于增加介电结构的导热性、促进粘合、和/或添加其他或另一种功能。
描述性地说,示例性实施例的要点是热塑性材料的益处和热固性材料的益处的混合组合,用于设计芯片封装的介电结构。
特别地,传统的热塑性系统由于其低熔融温度或玻璃化转变温度(Tg)和低温稳定性而遭受有限的热机械稳定性的巨大缺点。然而,热塑性材料通常具有非常低的吸湿倾向(例如极性较小的热塑性塑料吸收非常少的水分),但温度稳定性不足。进一步有利地,当用于封装的介电结构时,热塑性材料可以改善电击穿强度(特别是考虑到通常极性较小的热塑性塑料显示出明显更高的电击穿或绝缘强度的事实)。除此之外,热塑性材料可以降低工艺温度(许多极性热塑性塑料的工艺温度大大低于200℃,甚至低于150℃)。与传统热固性材料相比,热塑性材料具有比用于转移或压缩模塑(用于热固性塑料)高得多的注塑成型(用于热塑性塑料)的UPH。就包封化合物与芯片、导线和芯片载体之间的应力缓冲层而言,热塑性材料通常比热固性材料更柔软(即具有更低的杨氏模量)。保护诸如SiC和GaN的敏感材料免受传统环氧模塑化合物在电功能性甚至机械芯片裂缝方面的负面影响可能是非常重要的。热塑性聚合物的另一个优点是它们易于在专用和合适的溶剂中溶解。
通过提供包括交联的热塑性材料(非常有利地高度填充有填料颗粒和添加剂)的介电结构,允许组合地获得降低的吸湿性、增大的介电强度和相应地选择合适的热塑性系统的高度灵活性,以便为其配备交联剂和/或进行电子辐射以将其转移到具有更高热和机械稳定性的热固性材料中。
因此,示例性实施例的要点是利用用于热塑性处理的简单工艺(例如注塑、涂覆、浇铸等)使用配备有交联剂和用于基本包封的功能的热塑性聚合物。
可用作设计介电结构的基础的优选聚合物是技术热塑性塑料,如聚酰胺;或高性能聚合物,如PEEK(聚醚醚酮),其已作为简单的热塑性塑料表现出良好的热性能和机械性能;或高度结晶的聚合物,如HD-PE(高密度聚乙烯)或POM(聚甲醛),由于其低极性和高度结晶的结构而具有非常低的吸湿性。所有这些材料都与交联添加剂相容和/或通过能量波束照射以制造在高热性能、高机械性能和高电性能方面具有高度有利性质的介电结构。
根据示例性实施例,基于热塑性的聚合物材料可以用作介电结构来用于封装,特别是用于包封,作为主缓冲区和/或用于保护涂层或外部电绝缘。特别地,根据示例性实施例的介电结构可以用于将暴露的焊盘与附接到一个或多个封装的外部的散热器的外部绝缘。相应材料的交联可以通过处理(例如包封)原位进行,或者在处理后进行,以形成类似热固性的高性能聚合物。这可以通过将热塑性材料与一种或多种交联剂(如硅烷、过氧化物、偶氮基团等)混合和/或通过用能量波束简单辐射(例如通过电子辐射、β-辐射甚至电磁辐射)来实现。
图1示出了根据示例性实施例的封装100的预成型件的截面图。
图1示出了芯片载体102,其在此体现为由铜制成的引线框架。此处配置为功率半导体芯片的四个(任何其他数量也是可能的)电子芯片108安装(例如焊接)在芯片载体102的上主表面上。多个导电焊盘150形成在电子芯片108上并且面朝上安装,即背向芯片载体102的安装表面。
接下来,将说明如何形成体现为模塑型密封材料的介电结构104以包封电子芯片108的暴露表面部分以及芯片载体102的暴露表面的一部分。在下文中,将说明形成该介电结构104的不同实施例:
在图1的左侧,示出了用于形成介电结构104的基材160。该基材160由热塑性材料106(例如PEEK)、用于在通过加热熔化时引发热塑性材料106的交联的交联剂124(例如过氧化物)、大量(例如,相对于基材160的总重量至少60重量百分比)的填料颗粒114(例如用于改善待制造的介电结构104的导热性的氮化铝颗粒、以及作为着色剂的用于使待制造的介电结构104光学不透明或不透光的炭黑)、以及其他添加剂(未示出)的混合物构成。基材160被加热从而熔化,然后被供应到模塑工具(未示出)的模塑室中,在模塑室中也容纳芯片载体102和电子芯片108的组件。通过在模塑过程期间提供足够的热量来活化交联剂124来引发热塑性材料106的交联。因此,交联剂124的存在将迫使聚合物热塑性材料106中的链110通过作为由交联剂124发起交联反应的反应产物的交联结构112(对比图2中的细节152)进行交联。在完成交联反应后,介电结构104硬化并形成密封材料116,如图2所示。
附加地或替代地,如图1的右手侧示意性地示出的,通过用电子束源156产生的高能电子束154照射热塑性材料106,可以引发交联。提供由热塑性材料106(例如PEEK)和大量(例如,相对于基材162的总重量至少60重量百分比)的填料颗粒114(例如用于改善介电结构104的导热性的氮化铝颗粒、以及作为着色剂的用于使待制造的介电结构104光学不透明或不透光的炭黑)、以及其他添加剂(未示出)的混合物构成的基材162。基材162被加热从而熔化,然后被供应到模塑工具(未示出)的模塑室中,在模塑室中也容纳芯片载体102和电子芯片108的组件。由此获得的半成品包括其中嵌入有填料颗粒114的热塑性材料106(仍然基本上没有交联)。在用高能电子束154照射该已硬化的半成品(已经覆盖电子芯片108和芯片载体102)时,将引发热塑性材料106的交联,使得将获得对应于图2中的细节152的介电结构104,然而,不同的是,由于在基材162中没有提供交联剂124,因此不会存在交联结构112。同样通过这种处理,将获得交联的热塑性材料106。
在第三替代方案中,可以组合由交联剂124引发的交联和由高能电子束154引发的交联。这可以允许获得高度交联并因此获得具有高度有利性质的介电结构。
图2示出了当执行参照图1描述的第一或第三替代方案时获得的根据示例性实施例的封装100的截面图。
所示的封装100由芯片载体102、安装在芯片载体102上的电子芯片108、以及覆盖芯片载体102和电子芯片108的一部分并且包括高度填充的交联热塑性材料106的密封材料型介电结构104组成。从细节152可以看出,交联的热塑性材料106包括由交联结构112连接的聚合物链110,交联结构112由图1中所示的交联剂124产生。取决于根据图1引发的交联过程的工艺参数的调整(特别是交联剂124的量和/或高能电子束154的强度等),交联的热塑性材料106可具有在2%至90%的范围内(例如20%)的交联度。
高度填充的介电结构104包括相当大量的填料颗粒114。由于向介电结构104供应炭黑或另一种适当的着色剂作为添加剂或填料颗粒114,该介电结构104基本上是光学不透明的,例如其光学透明度仅为1%。这防止光传播到封装100中,这增加了封装100的电可靠性。由于向介电结构104供应氮化铝填充颗粒114,介电结构104可具有高的导热率值,例如1或2W/(mK)。结果,可以有效地从封装100消除在封装100的操作期间的功率半导体型电子芯片108的操作期间产生的热量,以便改善封装100的热性能。由于热塑性材料106的交联,所获得的介电结构104具有高机械稳定性并且是热稳定的,例如至少高达300℃。结果,封装100可以例如在260℃的典型焊接温度下焊接到安装底座(例如印刷电路板,未示出),而不会使介电结构104或封装100的整体性能劣化。此外,交联的热塑性材料106有利地防止水分进入封装100中。介电结构104的电绝缘性质也是高度可靠的,这对封装100的电性能具有积极影响。
因此,图1和图2的实施例提供了交联的热塑性材料106来用于包封(或者换句话说,作为密封材料116)芯片载体102和电子芯片108。因此,所述实施例提供了用于器件包封的交联的热塑性塑料。
在一个实施例中,还可以在引线框架或其他芯片载体102上用交联的热塑性材料106形成例如引线接合或夹钳接合器件的保护涂层(例如通过形成厚度在10μm和100μm之间的范围内的对应层)。
交联可以通过提供交联剂124(如过氧化物、偶氮结构等)来实现,交联剂124可以通过温度或紫外线辐射分解成自由基结构,即具有不成对电子的结构,以引起热塑性链110反应成为仍具有热塑性质的交联的热固性的介电结构104。可替换地,这种交联可以通过之后的任何电子辐射引起(因此在热塑性配方中不需要交联剂124,但仍然是可能的)。
图3示出了根据另一示例性实施例的封装100的截面图。
图3的实施例与图2的实施例的不同之处在于,图3的实施例还包括包封前述密封材料116的一部分的另外的密封材料118。例如,另外的密封材料118包括热固性材料,例如环氧基材料和/或硅基材料。
图4示出了根据又一示例性实施例的封装100的截面图。
在根据图4的封装100中,电子芯片108经由诸如焊接材料或胶水的连接结构164安装在引线框架型芯片载体102的管芯焊盘170上。电子芯片108的上主表面上的焊盘150可以通过导电连接元件166(此处体现为接合引线的)与芯片载体102的引线部分172电连接。芯片载体102、电子芯片108和导电连接元件166的部分由另一种密封材料168(例如传统的基于环氧树脂的模塑化合物)包封。
此外,涂覆包括高度填充的光学不透明交联热塑性材料106的层型介电结构104,以覆盖芯片载体102的管芯焊盘170的暴露的下主表面。因此,在图4的实施例中,介电结构104被配置为覆盖载体102的暴露部分的层结构120(此处体现为单个连续层)。层结构120又可以被散热器122覆盖以进一步改善封装100的热性能。在所示的实施例中,散热器122包括用多个散热片176整体形成的导热板状主体174。然而,可替换地,也可以使用简单的铜板作为附接到介电结构104用于冷却的散热器122。在所示实施例中,层型介电结构104提供高电击穿强度和低吸湿性。
图5示出了根据再一示例性实施例的封装100的截面图。
在图5的实施例中,层结构120包括电介质岛178、180,电介质岛178、180布置成使载体102的不同导电部分132、134、136彼此电绝缘。在所示的实施例中,芯片载体102被配置为DCB衬底,即中央导热和电绝缘层140(例如陶瓷板)的夹层布置,在其两个相对主表面上覆盖有相应的导电层144、142(例如铜板)。将导电层142图案化成导电部分132、134、136。在导电部分132、134之间,包括高度交联的热塑性材料106的电介质岛178可以确保适当的电去耦。在导电部分134、136之间,包括高度交联的热塑性材料106的电介质岛180也可以确保适当的电去耦。从细节184可以看出,电介质岛178、180可以根据图2至图4的介电结构104的成分来构成。
因此,介电结构104可以为所示的DCB器件提供电击穿保护。换言之,提供绝缘的交联热塑性塑料以用于在所示的铜金属化层之间的高电绝缘强度。同样在该实施例中,交联可以通过批处理的电子辐射来完成。作为替代方案,可以在芯片接合和引线接合之后执行具有交联热塑性材料106的完整涂层,来作为完整的电绝缘层保护。
应注意,术语“包括”不排除其他元件或者特征,“一”或“一个”不排除多个。还可以组合结合不同实施例描述的元件。还应注意,附图标记不应解释为限制权利要求的范围。此外,本申请的范围并非旨在限于说明书中描述的过程、机器、制造、物质组成、装置、方法和步骤的特定实施例。因此,所附权利要求旨在在其范围内包括这样的过程、机器、制造、物质组成、装置、方法或步骤。
Claims (28)
1.一种封装(100),包括:
·电子芯片(108);
·介电结构(104),包括高度填充的交联热塑性材料(106),其中,所述介电结构(104)包括至少部分地包封所述电子芯片(108)的密封材料(116)或由所述密封材料(116)组成。
2.根据权利要求1所述的封装(100),其中,所述交联热塑性材料(106)包括通过交联结构(112)连接的链(110)。
3.根据权利要求1或2所述的封装(100),其中,所述交联热塑性材料(106)的交联度在2%至90%的范围内。
4.根据权利要求1至3中任一项所述的封装(100),其中,所述介电结构(104)包括相对于所述介电结构(104)的总重量的至少50重量百分比的填料颗粒(114)。
5.根据权利要求4所述的封装(100),其中,所述填料颗粒(114)包括由以下组成的组中的至少一种:高导热填料颗粒(114)、着色剂、粘合促进剂和催化剂。
6.根据权利要求1至5中任一项所述的封装(100),其中,所述介电结构(104)是不透明的。
7.根据权利要求6所述的封装(100),其中,所述介电结构(104)具有小于2%的光学透明度。
8.根据权利要求1至7中任一项所述的封装(100),其中,所述介电结构(104)的导热率值至少为0.5W/(mK)。
9.根据权利要求1至8中任一项所述的封装(100),包括另外的密封材料(118),其至少包封所述密封材料(116)的至少部分。
10.根据权利要求9所述的封装(100),其中,所述另外的密封材料(118)包括热固性材料。
11.根据权利要求1至10中任一项所述的封装(100),其中,所述介电结构(104)包括层结构(120)或由所述层结构(120)组成,所述层结构(120)覆盖所述电子芯片(108)的至少部分。
12.根据权利要求11所述的封装(100),其中,所述层结构(120)被散热器(122)覆盖。
13.根据权利要求11或12所述的封装(100),其中,所述层结构(120)被布置为使所述封装(100)的芯片载体(102)的不同导电部分(132、134、136)彼此电绝缘,所述电子芯片(108)安装在所述芯片载体(102)上。
14.根据权利要求1至13中任一项所述的封装(100),其中,所述介电结构(104)被配置为在至少高达260℃是热稳定的。
15.根据权利要求1-14中任一项所述的封装(100),其中,所述热塑性材料(106)包括由以下组成的组中的至少一种:聚酰胺、聚醚醚酮、聚对苯二甲酸乙二醇酯、聚对苯二甲酸丁二醇酯、聚酰亚胺、聚砜、高密度聚乙烯、聚甲醛、聚丙烯和聚苯乙烯。
16.根据权利要求1至15中任一项所述的封装(100),其中,所述电子芯片(108)包括半导体芯片。
17.根据权利要求1至16中任一项所述的封装(100),其中,所述电子芯片(108)包含至少一个晶体管。
18.根据权利要求1至17中任一项所述的封装(100),包括芯片载体(102),所述电子芯片(108)安装在所述芯片载体上。
19.根据权利要求18所述的封装(100),其中,所述芯片载体(102)包括由引线框架和陶瓷片(140)组成的组中的至少一种,所述陶瓷片(140)的两个相对主表面上覆盖有相应的金属层(142、144)。
20.根据权利要求18或19所述的封装(100),其中,所述介电结构(104)覆盖所述电子芯片(108)和所述芯片载体(102)的至少部分。
21.一种封装(100),包括:
·芯片载体(102);
·电子芯片(108),其安装在所述芯片载体(102)上;
·介电结构(104),其覆盖所述电子芯片(108)的至少部分,并且包括光学不透明的交联热塑性材料(106)。
22.一种制造封装(100)的方法,所述方法包括:
·将电子芯片(108)安装在芯片载体(102)上;
·通过使高度填充的热塑性材料(106)交联来形成覆盖所述电子芯片(108)的至少部分的介电结构(104)。
23.根据权利要求22所述的方法,其中,所述方法包括通过向所述热塑性材料(106)添加交联剂(124)并通过活化所述交联剂(124)来引发所述交联。
24.根据权利要求23所述的方法,其中,所述交联剂(124)包括由以下组成的组中的至少一种:过氧化物、偶氮结构和硅烷。
25.根据权利要求23或24所述的方法,其中,活化所述交联剂(124)包括加热所述热塑性材料(106)和所述交联剂(124)的混合物。
26.根据权利要求22-25中任一项的方法,其中,所述方法包括通过用能量波束照射所述热塑性材料(106)来引发所述交联。
27.根据权利要求22-26中任一项的方法,其中,形成所述介电结构(104)包括由以下组成的组中的至少一种:模塑、涂覆和浇铸。
28.一种制造封装(100)的方法,所述方法包括通过使不透明热塑性材料(106)交联来形成覆盖电子芯片(108)的至少部分的介电结构(104)。
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CN111261527A (zh) * | 2020-02-11 | 2020-06-09 | 张正 | 一种半导体封装构件及其制备方法 |
CN112718413A (zh) * | 2020-12-05 | 2021-04-30 | 深圳市裕展精密科技有限公司 | 复合件的密封方法及密封装置 |
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DE102017120290B3 (de) * | 2017-09-04 | 2018-11-08 | Infineon Technologies Ag | Verfahren zum Prozessieren einer Schichtstruktur |
US11139268B2 (en) * | 2019-08-06 | 2021-10-05 | Advanced Semiconductor Engineering, Inc. | Semiconductor package structure and method of manufacturing the same |
US20220199480A1 (en) * | 2020-12-21 | 2022-06-23 | Intel Corporation | Microelectronic structures including bridges |
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KR100991829B1 (ko) * | 2001-12-29 | 2010-11-04 | 항조우 후양 신잉 띠앤즈 리미티드 | Led 및 led램프 |
US20060241215A1 (en) | 2005-04-25 | 2006-10-26 | Shin-Etsu Chemical Co., Ltd. | Semiconductor encapsulating epoxy resin composition and semiconductor device |
DE102005036520A1 (de) | 2005-04-26 | 2006-11-09 | Osram Opto Semiconductors Gmbh | Optisches Bauteil, optoelektronisches Bauelement mit dem Bauteil und dessen Herstellung |
KR20110044761A (ko) * | 2008-08-25 | 2011-04-29 | 다우 글로벌 테크놀로지스 엘엘씨 | 용융 가공가능하고 사출 성형가능한 열가소성 중합체 조성물 및 이를 사용하여 제조한 반도체 장치 |
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CN111261527A (zh) * | 2020-02-11 | 2020-06-09 | 张正 | 一种半导体封装构件及其制备方法 |
CN111261527B (zh) * | 2020-02-11 | 2021-10-01 | 深圳市法本电子有限公司 | 一种半导体封装构件及其制备方法 |
CN112718413A (zh) * | 2020-12-05 | 2021-04-30 | 深圳市裕展精密科技有限公司 | 复合件的密封方法及密封装置 |
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