CN110277119A - 半导体存储装置 - Google Patents
半导体存储装置 Download PDFInfo
- Publication number
- CN110277119A CN110277119A CN201810817035.2A CN201810817035A CN110277119A CN 110277119 A CN110277119 A CN 110277119A CN 201810817035 A CN201810817035 A CN 201810817035A CN 110277119 A CN110277119 A CN 110277119A
- Authority
- CN
- China
- Prior art keywords
- line
- current potential
- storage unit
- selection
- control circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
- G11C13/0026—Bit-line or column circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
- G11C13/0028—Word-line or row circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/003—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0078—Write using current through the cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/009—Write using potential difference applied between cell electrodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/71—Three dimensional array
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/72—Array wherein the access device being a diode
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Databases & Information Systems (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (5)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018048446A JP2019160375A (ja) | 2018-03-15 | 2018-03-15 | 半導体記憶装置 |
JP2018-048446 | 2018-03-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110277119A true CN110277119A (zh) | 2019-09-24 |
CN110277119B CN110277119B (zh) | 2023-06-30 |
Family
ID=67904260
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810817035.2A Active CN110277119B (zh) | 2018-03-15 | 2018-07-24 | 半导体存储装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10672473B2 (zh) |
JP (1) | JP2019160375A (zh) |
CN (1) | CN110277119B (zh) |
TW (1) | TWI724309B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113393874A (zh) * | 2020-03-12 | 2021-09-14 | 铠侠股份有限公司 | 半导体存储装置以及存储系统 |
CN117854557A (zh) * | 2024-02-29 | 2024-04-09 | 浙江力积存储科技有限公司 | 存储阵列及驱动存储阵列的方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10847221B2 (en) | 2018-10-30 | 2020-11-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory device and method thereof |
JP2023025932A (ja) * | 2021-08-11 | 2023-02-24 | ソニーセミコンダクタソリューションズ株式会社 | メモリモジュール |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101727979A (zh) * | 2008-10-10 | 2010-06-09 | 株式会社东芝 | 半导体存储装置 |
US20160064083A1 (en) * | 2014-09-02 | 2016-03-03 | Sang-Wan Nam | Nonvolatile memory device and method of programming the same |
US20160365149A1 (en) * | 2014-07-30 | 2016-12-15 | Sang-Wan Nam | Nonvolatile memory device and wordline driving method thereof |
JP6137180B2 (ja) * | 2012-06-26 | 2017-05-31 | 日本電気株式会社 | プログラミング回路、半導体装置及びプログラミング方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011076420A1 (de) * | 2011-05-24 | 2012-11-29 | Excelitas Technologies Gmbh & Co. Kg | Strahlungserfassungsvorrichtung, Schaltung |
US9443588B2 (en) * | 2014-10-27 | 2016-09-13 | Industrial Technology Research Institute | Resistive memory system, driver circuit thereof and method for setting resistance thereof |
-
2018
- 2018-03-15 JP JP2018048446A patent/JP2019160375A/ja active Pending
- 2018-06-22 TW TW107121393A patent/TWI724309B/zh active
- 2018-07-24 CN CN201810817035.2A patent/CN110277119B/zh active Active
- 2018-09-03 US US16/120,410 patent/US10672473B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101727979A (zh) * | 2008-10-10 | 2010-06-09 | 株式会社东芝 | 半导体存储装置 |
JP6137180B2 (ja) * | 2012-06-26 | 2017-05-31 | 日本電気株式会社 | プログラミング回路、半導体装置及びプログラミング方法 |
US20160365149A1 (en) * | 2014-07-30 | 2016-12-15 | Sang-Wan Nam | Nonvolatile memory device and wordline driving method thereof |
US20160064083A1 (en) * | 2014-09-02 | 2016-03-03 | Sang-Wan Nam | Nonvolatile memory device and method of programming the same |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113393874A (zh) * | 2020-03-12 | 2021-09-14 | 铠侠股份有限公司 | 半导体存储装置以及存储系统 |
CN113393874B (zh) * | 2020-03-12 | 2024-04-12 | 铠侠股份有限公司 | 半导体存储装置以及存储系统 |
CN117854557A (zh) * | 2024-02-29 | 2024-04-09 | 浙江力积存储科技有限公司 | 存储阵列及驱动存储阵列的方法 |
CN117854557B (zh) * | 2024-02-29 | 2024-05-07 | 浙江力积存储科技有限公司 | 存储阵列及驱动存储阵列的方法 |
Also Published As
Publication number | Publication date |
---|---|
CN110277119B (zh) | 2023-06-30 |
US20190287616A1 (en) | 2019-09-19 |
JP2019160375A (ja) | 2019-09-19 |
TW201939502A (zh) | 2019-10-01 |
TWI724309B (zh) | 2021-04-11 |
US10672473B2 (en) | 2020-06-02 |
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CB02 | Change of applicant information |
Address after: Tokyo Applicant after: Kaixia Co.,Ltd. Address before: Tokyo Applicant before: TOSHIBA MEMORY Corp. Address after: Tokyo Applicant after: TOSHIBA MEMORY Corp. Address before: Tokyo Applicant before: Pangea Co.,Ltd. |
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Effective date of registration: 20220301 Address after: Tokyo Applicant after: Pangea Co.,Ltd. Address before: Tokyo Applicant before: TOSHIBA MEMORY Corp. |
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