CN110244526B - 光致抗蚀剂剥离剂 - Google Patents
光致抗蚀剂剥离剂 Download PDFInfo
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- CN110244526B CN110244526B CN201910173523.9A CN201910173523A CN110244526B CN 110244526 B CN110244526 B CN 110244526B CN 201910173523 A CN201910173523 A CN 201910173523A CN 110244526 B CN110244526 B CN 110244526B
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 36
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 239000002904 solvent Substances 0.000 claims abstract description 35
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 21
- 125000001453 quaternary ammonium group Chemical group 0.000 claims abstract description 17
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 28
- 238000005260 corrosion Methods 0.000 claims description 27
- 230000007797 corrosion Effects 0.000 claims description 27
- 239000003112 inhibitor Substances 0.000 claims description 27
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 21
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 claims description 21
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 18
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 15
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 10
- 230000008014 freezing Effects 0.000 claims description 8
- 238000007710 freezing Methods 0.000 claims description 8
- MFKRHJVUCZRDTF-UHFFFAOYSA-N 3-methoxy-3-methylbutan-1-ol Chemical compound COC(C)(C)CCO MFKRHJVUCZRDTF-UHFFFAOYSA-N 0.000 claims description 7
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 7
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 7
- OSSXLTCIVXOQNK-UHFFFAOYSA-M dimethyl(dipropyl)azanium;hydroxide Chemical compound [OH-].CCC[N+](C)(C)CCC OSSXLTCIVXOQNK-UHFFFAOYSA-M 0.000 claims description 6
- KVFVBPYVNUCWJX-UHFFFAOYSA-M ethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)C KVFVBPYVNUCWJX-UHFFFAOYSA-M 0.000 claims description 6
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 claims description 6
- HMBHAQMOBKLWRX-UHFFFAOYSA-N 2,3-dihydro-1,4-benzodioxine-3-carboxylic acid Chemical compound C1=CC=C2OC(C(=O)O)COC2=C1 HMBHAQMOBKLWRX-UHFFFAOYSA-N 0.000 claims description 5
- 229940075419 choline hydroxide Drugs 0.000 claims description 5
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 claims description 4
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 claims description 4
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims description 4
- 239000000600 sorbitol Substances 0.000 claims description 4
- 125000001424 substituent group Chemical group 0.000 claims description 4
- 125000003710 aryl alkyl group Chemical group 0.000 claims description 3
- 150000004686 pentahydrates Chemical class 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 150000004677 hydrates Chemical class 0.000 claims 1
- 239000000203 mixture Substances 0.000 abstract description 95
- 238000009472 formulation Methods 0.000 abstract description 35
- 125000004432 carbon atom Chemical group C* 0.000 abstract description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 abstract description 8
- 238000011068 loading method Methods 0.000 abstract description 6
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 abstract description 4
- 239000000243 solution Substances 0.000 description 42
- 229920001721 polyimide Polymers 0.000 description 25
- 239000004642 Polyimide Substances 0.000 description 24
- -1 glycol ethers Chemical class 0.000 description 21
- 235000012431 wafers Nutrition 0.000 description 20
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- 238000004140 cleaning Methods 0.000 description 16
- 150000001875 compounds Chemical class 0.000 description 14
- 239000010410 layer Substances 0.000 description 14
- 229920002577 polybenzoxazole Polymers 0.000 description 14
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 13
- 230000008569 process Effects 0.000 description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 11
- 235000011114 ammonium hydroxide Nutrition 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 9
- 229920000642 polymer Polymers 0.000 description 9
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- 150000003077 polyols Chemical class 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 8
- 238000007654 immersion Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000003756 stirring Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 150000001298 alcohols Chemical class 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- 150000002009 diols Chemical class 0.000 description 6
- XPFVYQJUAUNWIW-UHFFFAOYSA-N furfuryl alcohol Chemical compound OCC1=CC=CO1 XPFVYQJUAUNWIW-UHFFFAOYSA-N 0.000 description 6
- 229960004063 propylene glycol Drugs 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 5
- 235000013772 propylene glycol Nutrition 0.000 description 5
- YPFDHNVEDLHUCE-UHFFFAOYSA-N 1,3-propanediol Substances OCCCO YPFDHNVEDLHUCE-UHFFFAOYSA-N 0.000 description 4
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 4
- FRDAATYAJDYRNW-UHFFFAOYSA-N 3-methyl-3-pentanol Chemical compound CCC(C)(O)CC FRDAATYAJDYRNW-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229960005150 glycerol Drugs 0.000 description 4
- HEBKCHPVOIAQTA-UHFFFAOYSA-N meso ribitol Natural products OCC(O)C(O)C(O)CO HEBKCHPVOIAQTA-UHFFFAOYSA-N 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000004094 surface-active agent Substances 0.000 description 4
- MSXVEPNJUHWQHW-UHFFFAOYSA-N 2-methylbutan-2-ol Chemical compound CCC(C)(C)O MSXVEPNJUHWQHW-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
- UNXHWFMMPAWVPI-UHFFFAOYSA-N Erythritol Natural products OCC(O)C(O)CO UNXHWFMMPAWVPI-UHFFFAOYSA-N 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- TVXBFESIOXBWNM-UHFFFAOYSA-N Xylitol Natural products OCCC(O)C(O)C(O)CCO TVXBFESIOXBWNM-UHFFFAOYSA-N 0.000 description 3
- 238000013019 agitation Methods 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 3
- 235000011187 glycerol Nutrition 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- GLDOVTGHNKAZLK-UHFFFAOYSA-N octadecan-1-ol Chemical compound CCCCCCCCCCCCCCCCCCO GLDOVTGHNKAZLK-UHFFFAOYSA-N 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 150000005846 sugar alcohols Chemical class 0.000 description 3
- 239000000811 xylitol Substances 0.000 description 3
- HEBKCHPVOIAQTA-SCDXWVJYSA-N xylitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)CO HEBKCHPVOIAQTA-SCDXWVJYSA-N 0.000 description 3
- 229960002675 xylitol Drugs 0.000 description 3
- 235000010447 xylitol Nutrition 0.000 description 3
- DNIAPMSPPWPWGF-VKHMYHEASA-N (+)-propylene glycol Chemical compound C[C@H](O)CO DNIAPMSPPWPWGF-VKHMYHEASA-N 0.000 description 2
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 2
- 125000004209 (C1-C8) alkyl group Chemical group 0.000 description 2
- ARXKVVRQIIOZGF-UHFFFAOYSA-N 1,2,4-butanetriol Chemical compound OCCC(O)CO ARXKVVRQIIOZGF-UHFFFAOYSA-N 0.000 description 2
- 229940083957 1,2-butanediol Drugs 0.000 description 2
- 229940035437 1,3-propanediol Drugs 0.000 description 2
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- XFRVVPUIAFSTFO-UHFFFAOYSA-N 1-Tridecanol Chemical compound CCCCCCCCCCCCCO XFRVVPUIAFSTFO-UHFFFAOYSA-N 0.000 description 2
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 2
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 2
- CNJRPYFBORAQAU-UHFFFAOYSA-N 1-ethoxy-2-(2-methoxyethoxy)ethane Chemical compound CCOCCOCCOC CNJRPYFBORAQAU-UHFFFAOYSA-N 0.000 description 2
- IBLKWZIFZMJLFL-UHFFFAOYSA-N 1-phenoxypropan-2-ol Chemical compound CC(O)COC1=CC=CC=C1 IBLKWZIFZMJLFL-UHFFFAOYSA-N 0.000 description 2
- FENFUOGYJVOCRY-UHFFFAOYSA-N 1-propoxypropan-2-ol Chemical compound CCCOCC(C)O FENFUOGYJVOCRY-UHFFFAOYSA-N 0.000 description 2
- WMDZKDKPYCNCDZ-UHFFFAOYSA-N 2-(2-butoxypropoxy)propan-1-ol Chemical compound CCCCOC(C)COC(C)CO WMDZKDKPYCNCDZ-UHFFFAOYSA-N 0.000 description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 2
- CUDYYMUUJHLCGZ-UHFFFAOYSA-N 2-(2-methoxypropoxy)propan-1-ol Chemical compound COC(C)COC(C)CO CUDYYMUUJHLCGZ-UHFFFAOYSA-N 0.000 description 2
- DJCYDDALXPHSHR-UHFFFAOYSA-N 2-(2-propoxyethoxy)ethanol Chemical compound CCCOCCOCCO DJCYDDALXPHSHR-UHFFFAOYSA-N 0.000 description 2
- XYVAYAJYLWYJJN-UHFFFAOYSA-N 2-(2-propoxypropoxy)propan-1-ol Chemical compound CCCOC(C)COC(C)CO XYVAYAJYLWYJJN-UHFFFAOYSA-N 0.000 description 2
- KZTWONRVIPPDKH-UHFFFAOYSA-N 2-(piperidin-1-yl)ethanol Chemical compound OCCN1CCCCC1 KZTWONRVIPPDKH-UHFFFAOYSA-N 0.000 description 2
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 description 2
- ICSNLGPSRYBMBD-UHFFFAOYSA-N 2-aminopyridine Chemical compound NC1=CC=CC=N1 ICSNLGPSRYBMBD-UHFFFAOYSA-N 0.000 description 2
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- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
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- VATRWWPJWVCZTA-UHFFFAOYSA-N 3-oxo-n-[2-(trifluoromethyl)phenyl]butanamide Chemical compound CC(=O)CC(=O)NC1=CC=CC=C1C(F)(F)F VATRWWPJWVCZTA-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- 239000004381 Choline salt Substances 0.000 description 2
- 239000004386 Erythritol Substances 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
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- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
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- ZTHYODDOHIVTJV-UHFFFAOYSA-N Propyl gallate Chemical compound CCCOC(=O)C1=CC(O)=C(O)C(O)=C1 ZTHYODDOHIVTJV-UHFFFAOYSA-N 0.000 description 2
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- 239000001089 [(2R)-oxolan-2-yl]methanol Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- UJMDYLWCYJJYMO-UHFFFAOYSA-N benzene-1,2,3-tricarboxylic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1C(O)=O UJMDYLWCYJJYMO-UHFFFAOYSA-N 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
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- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 2
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- 238000007598 dipping method Methods 0.000 description 2
- LQZZUXJYWNFBMV-UHFFFAOYSA-N dodecan-1-ol Chemical compound CCCCCCCCCCCCO LQZZUXJYWNFBMV-UHFFFAOYSA-N 0.000 description 2
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- 238000001312 dry etching Methods 0.000 description 2
- UNXHWFMMPAWVPI-ZXZARUISSA-N erythritol Chemical compound OC[C@H](O)[C@H](O)CO UNXHWFMMPAWVPI-ZXZARUISSA-N 0.000 description 2
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- FIPPFBHCBUDBRR-UHFFFAOYSA-N henicosan-1-ol Chemical compound CCCCCCCCCCCCCCCCCCCCCO FIPPFBHCBUDBRR-UHFFFAOYSA-N 0.000 description 2
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- BXWNKGSJHAJOGX-UHFFFAOYSA-N hexadecan-1-ol Chemical compound CCCCCCCCCCCCCCCCO BXWNKGSJHAJOGX-UHFFFAOYSA-N 0.000 description 2
- BTFJIXJJCSYFAL-UHFFFAOYSA-N icosan-1-ol Chemical compound CCCCCCCCCCCCCCCCCCCCO BTFJIXJJCSYFAL-UHFFFAOYSA-N 0.000 description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 description 2
- KQNPFQTWMSNSAP-UHFFFAOYSA-N isobutyric acid Chemical compound CC(C)C(O)=O KQNPFQTWMSNSAP-UHFFFAOYSA-N 0.000 description 2
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- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- FBSFWRHWHYMIOG-UHFFFAOYSA-N methyl 3,4,5-trihydroxybenzoate Chemical compound COC(=O)C1=CC(O)=C(O)C(O)=C1 FBSFWRHWHYMIOG-UHFFFAOYSA-N 0.000 description 2
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 2
- 239000011707 mineral Chemical class 0.000 description 2
- XGFDHKJUZCCPKQ-UHFFFAOYSA-N nonadecan-1-ol Chemical compound CCCCCCCCCCCCCCCCCCCO XGFDHKJUZCCPKQ-UHFFFAOYSA-N 0.000 description 2
- REIUXOLGHVXAEO-UHFFFAOYSA-N pentadecan-1-ol Chemical compound CCCCCCCCCCCCCCCO REIUXOLGHVXAEO-UHFFFAOYSA-N 0.000 description 2
- GLOBUAZSRIOKLN-UHFFFAOYSA-N pentane-1,4-diol Chemical compound CC(O)CCCO GLOBUAZSRIOKLN-UHFFFAOYSA-N 0.000 description 2
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- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 229920000166 polytrimethylene carbonate Polymers 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
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Abstract
本文提供了用于从衬底除去光致抗蚀剂的改善的剥离剂溶液,其通常具有高于约95℃的闪点和高负载容量。所述剥离剂溶液包含二乙二醇丁醚,季铵氢氧化物,和具有至少两个碳原子、至少一个氨基取代基和至少一个羟基取代基的烷醇胺,所述氨基和羟基取代基与两个不同的碳原子连接。一些制剂可另外含有第二溶剂。所述制剂不含DMSO。另外提供了使用所述剥离剂溶液的方法。
Description
相关申请的交叉引用
本申请根据35 U.S.C.§119(e)要求2018年3月7日提交的美国临时专利申请No.62/639,962的优先权,其全部内容通过引用并入本文。
技术领域
本发明一般地涉及具有从衬底上有效除去光致抗蚀剂的能力的组合物,以及使用这样的组合物的方法。所公开的组合物是用于除去光致抗蚀剂的剥离剂溶液,其具有在低于正常室温的温度和在运输和仓储中经常遇到的温度下保持液态的能力,具有远高于正常加工温度的闪点,并且另外具有与聚合物介电材料的相容性。
发明内容
在本发明的一个方面,提供了用于从衬底有效除去或剥离正或负性光致抗蚀剂,蚀刻工艺后的光致抗蚀剂,或蚀刻残留物的光致抗蚀剂的剥离剂溶液(也称为组合物)。本发明的剥离剂溶液对于抗蚀剂材料具有特别高的负载能力,和在经历运输、仓储和一些生产设施的使用中经常遇到的低于正常室温的温度时保持液态的能力。组合物具有高于95℃的闪点。更优选的制剂具有大于或等于99℃的闪点。组合物具有充分低于0℃的凝固点,以最小化运输和仓储期间的固化。更优选的制剂具有低于约-10℃的凝固点。
根据本发明的组合物通常含有二乙二醇丁醚(DB),季铵氢氧化物,和烷醇胺或第二溶剂或者两者。一个优选实施方式含有约30重量%至约97重量%的二乙二醇丁醚(DB),约1重量%至约7重量%的季铵氢氧化物,和约1重量%至约75重量%的烷醇胺。优选的季基团是(C1-C8)烷基,苄基,芳烷基,(C1-C5)醇及其组合。特别优选的季铵氢氧化物包括四甲基氢氧化铵(TMAH),四乙基氢氧化铵(TEAH),乙基三甲基氢氧化铵(ETMAH),氢氧化胆碱和二甲基二丙基氢氧化铵。优选的烷醇胺包括单乙醇胺(MEA)和(2-(2-氨基乙氧基)乙醇)(AEE)。组合物基本上不含DMSO。根据本发明的进一步的实施方式包含另外的溶剂或第二溶剂。优选的第二溶剂包括二醇,二醇醚,多羟基化合物等。
根据本发明的另一个实施方式包含DB,季铵氢氧化物,水和腐蚀抑制剂。该实施方式基本上不含烷醇胺,第二溶剂和DMSO。
本公开的第二方面提供了使用上述新型剥离剂溶液从衬底除去光致抗蚀剂和相关聚合物材料的方法。光致抗蚀剂可以通过使衬底与剥离剂溶液接触足以除去期望量的光致抗蚀剂的时间,通过从剥离剂溶液中移除衬底,用去离子水或溶剂从衬底冲洗剥离剂溶液,并且干燥衬底,而从其上具有光致抗蚀剂的所选衬底除去。
本公开的第三方面包括通过所公开的新颖方法制造的电子设备。
通过以下更详细的描述,结合通过示例的方式示出本发明的原理的附图,本发明的其他特征和优点将变得显而易见。
具体实施方式
出于促进理解要求保护的内容的目的,现将参考所说明的实施方式,并将使用特定语言描述所述实施方式。尽管如此,应理解,并不由此意图限制要求保护的内容的范围,如其中所说明的其原理的这样的改变和进一步的修改和这样的进一步的应用是被设想的,正如对于本公开涉及的领域中的技术人员所通常会发生的。
在一个实施方式中,根据本公开的组合物包含二乙二醇丁醚(DB)溶剂,季铵氢氧化物,水,腐蚀抑制剂,和第二溶剂或具有至少两个碳原子、至少一个氨基取代基和至少一个羟基取代基的烷醇胺,所述氨基和羟基取代基与两个不同的碳原子连接。优选的季取代基包括(C1-C8)烷基,苄基及其组合。具有增加的烷醇胺含量的制剂具有特别是对碳钢无腐蚀性的优点,并且对典型的废物处理系统和辅助设备的损害小于其他剥离剂溶液。在一些实施方式中,制剂可另外包含第二溶剂。在一个实施方式中,制剂可含有约0.2重量%至约75重量%的第二溶剂。特别有用的第二溶剂包括下文更详细描述的二醇,二醇醚和多羟基化合物。在一些实施方式中,第二溶剂包括3-甲氧基-3-甲基-1-丁醇(MMB)或丙二醇(PG)。特别合适的制剂具有充分低于0℃的凝固点,以最小化运输和仓储期间的固化。更优选的制剂具有低于约-10℃,低于约-15℃或低于约-19℃的凝固点。优选的制剂具有充分高于90℃的闪点,以使使用期间的可燃性危害最小化。更优选的制剂具有高于约95℃,高于约97℃,高于约99℃或高于约100℃的闪点。因为优选的剥离剂溶液在低温下保持液态,所以消除或最小化在溶液可以使用之前使在寒冷天气期间接收的或在未加热的仓库中储存的剥离剂溶液的固化鼓状物液化的需要。使用鼓式加热器熔化固化的剥离剂溶液是耗时的,需要额外的处理,并且可以导致熔融溶液的组合物的不完全熔化和改性。在一些实施方式中,组合物不含或基本上不含二甲基亚砜(DMSO)。在一些实施方式中,组合物可以不含或基本上不含烷醇胺。在一些实施方式中,组合物可以不含或基本上不含第二溶剂。
在一个替代性实施方式中,根据本公开的组合物包含除DB以外的溶剂或在DB之外还包含另外的溶剂,例如二乙二醇甲醚,二乙二醇乙醚,二乙二醇丙醚,丙二醇甲醚,二丙二醇甲醚,丙二醇丙醚,二丙二醇丙醚,丙二醇苯醚,丙二醇正丁醚,二丙二醇正丁醚,乙二醇丙醚,乙二醇丁醚,乙二醇苯醚,三丙二醇甲醚,二丙二醇二甲醚,二乙二醇甲基乙基醚,二乙二醇二甲醚,二乙二醇二乙醚,季铵氢氧化物,水,腐蚀抑制剂,和第二溶剂或具有至少两个碳原子、至少一个氨基取代基和至少一个羟基取代基的烷醇胺,所述氨基和羟基取代基与两个不同的碳原子连接。
另外,根据本发明的组合物显示出高负载能力,使得组合物能够除去更高水平的光致抗蚀剂而无固体沉淀。负载能力定义为在材料再沉积到晶片上之前或在残留物保留在晶片上之前,每升剥离剂溶液可以除去的光致抗蚀剂或双层材料的cm3数。例如,如果20升剥离剂溶液在再沉积发生或残留物保留在晶片上之前可以除去300cm3的光致抗蚀剂,则负载容量为300cm3/20升=15cm3/升。
根据本发明的组合物显示出与聚合物介电材料如聚酰亚胺(PI)和聚苯并噁唑(PBO)良好的相容性。良好的相容性通过低蚀刻速率证明。本公开的组合物可显示出与PI良好的相容性,或与PBO良好的相容性,或与PI和PBO两者良好的相容性。对PI的蚀刻速率可小于约20nm/min,或小于约10nm/min,或小于约5nm/min,或小于约3nm/min,或小于约2nm/min,或小于约1nm/min。或者,对PBO的蚀刻速率可小于约20nm/min,或小于约10nm/min,或小于约5nm/min,或小于约3nm/min,或小于约2nm/min,或小于约1nm/min。另外,对PI和PBO两者的蚀刻速率可小于约20nm/min,小于约10nm/min,小于约5nm/min,或小于约3nm/min,或小于约2nm/min,或小于约1nm/min。
本发明的组合物中二乙二醇丁醚(DB)的重量百分比可为约30重量%至约97重量%。在其他实施方式中,组合物可含有约40重量%至约97重量%,约50重量%至约97重量%的DB,或约60重量%至约97重量%的DB。在一些实施方式中,组合物含有大于约30重量%,大于约40重量%,大于约50重量%,或大于约60重量%的DB。前三句话中任何刚才描述的量可以用作任意组合的端点,以描述本发明的组合物中DB的重量百分比,例如,约30至约60重量%的DB。在另一个实施方式中,溶液中DB的量与水的量的比率大于约5,大于约9,大于约10,大于约15,大于约20,大于约50,大于约100,大于约1000,和/或大于约3000。在另一个实施方式中,DB的量与水的量的比率为约5至约10,000,或约9至约10,000,或约10至约10,000,或约15至约10,000,或约5至约6,000,或约9至约6,000,或约10至约6,000,或约15至约6,000。前两句话中任何刚才描述的量可以用作任意组合的端点,以描述本发明的组合物中DB的量与水的量的比率,例如约50至约6000。
本发明的组合物中二乙二醇丁醚(DB)的重量百分比和烷醇胺的重量百分比之和可以为约55重量%至约97重量%。在其他实施方式中,组合物可含有约55重量%至约95重量%,约65重量%至约95重量%,约70重量%至约97重量%,约75重量%至约95重量%,约80重量%至约97重量%,约85重量%至约97重量%,约85重量%至约95重量%,约90重量%至约97重量%,约75重量%至约90重量%,约75重量%至约85重量%的二乙二醇丁醚(DB)和烷醇胺。前两句话中任何刚才描述的量可以用作任意组合的端点,以描述本发明的组合物中DB和烷醇胺的重量百分比,例如,约95重量%至约97重量%的DB和烷醇胺。在一些实施方式中,二乙二醇丁醚(DB)的重量百分比大于烷醇胺的重量百分比,并且二乙二醇丁醚(DB)可以以比存在的烷醇胺的量多约20%至约90%,约20%至约40%,约70%至约90%,约10%至约50%,约40%至约90%,或约30%至约90%的量存在于组合物中。在一些实施方式中,二乙二醇丁醚(DB)可以以比存在的烷醇胺的量多大于约20%,大于约30%,大于约35%,大于约40%,大于约50%,大于约70%,大于约75%,大于约80%,或大于约85%的量存在于组合物中。前一句话中任何刚才描述的量可以用作任意组合的端点,以描述范围,例如,比存在的烷醇胺的量多约30%至约75%。
在其他组合物中,二乙二醇丁醚(DB)的重量百分比小于烷醇胺的重量百分比,并且二乙二醇丁醚(DB)可以以比存在的烷醇胺的量少5%至约30%,10%至约30%,10%至约25%,或10%至约20%的量存在于组合物中。
在一些实施方式中,烷醇胺的重量百分比可以为约1重量%至约75重量%,约2重量%至约70重量%,约2重量%至约60重量%,约2重量%至约50重量%,约2重量%至约40重量%,约3重量%至约65重量%,约3重量%至约60重量%,约3重量%至约50重量%,约3重量%至约40重量%,约4重量%至约60重量%,约4重量%至约50重量%,约4重量%至约40重量%,约7重量%至约50重量%,约10重量%至约50重量%,约10重量%至约40重量%,约15重量%至约35重量%,约20重量%至约50重量%,约20重量%至约40重量%,约1重量%至约10重量%,约2重量%至约10重量%,或约3重量%至约10重量%。
组合物可包含约0.1重量%至约10重量%,0.2重量%至约8重量%,0.3重量%至约6重量%,0.5重量%至约5重量%,1重量%至约4重量%,约1重量%至约6重量%,约1重量%至7重量%,约0.1重量%至约6重量%,或约1重量%至约5重量%的季铵氢氧化物。优选的季取代基包括(C1-C8)烷基,苄基,芳烷基,(C1-C5)醇及其组合。在一些实施方式中,季铵氢氧化物可包括四甲基氢氧化铵(TMAH),四乙基氢氧化铵(TEAH),乙基三甲基氢氧化铵(ETMAH),二甲基二丙基氢氧化铵(DMDPAH)和/或氢氧化胆碱(CH)。在一些实施方式中,季铵氢氧化物可以不含或基本上不含四甲基氢氧化铵(TMAH)。
使用时,第二溶剂可以占组合物的约1重量%至约75重量%,约5重量%至约30重量%,约0.2重量%至约35重量%,约0.2重量%至约30重量%,约0.2重量%至约25重量%,约0.2重量%至约20重量%,约0.2重量%至约15重量%,约0.2重量%至约12重量%,约5重量%至约12重量%,或约5重量%至约15重量%。剥离制剂还可含有任选的表面活性剂,通常含量范围为约0.01重量%至约3重量%。因为一些剥离剂溶液的组分可以作为水溶液提供,所以组合物可以另外含有水。当存在时,水可以占组合物的约0.01重量%至约50重量%,约0.01重量%至约40重量%,约0.01重量%至约30重量%,约0.01重量%至约25重量%,约0.01重量%至约20重量%,约0.01重量%至约15重量%,约0.01重量%至约10重量%,约0.01重量%至约7重量%,约0.01重量%至约5重量%,约0.01重量%至约3重量%,约0.01重量%至约1重量%,约0.1重量%至约20重量%,约0.1重量%至约10重量%,约0.1重量%至约7重量%,约1重量%至约15重量%,约1重量%至约7重量%,约2重量%至约10重量%,约2重量%至约7重量%,约3重量%至约10重量%,约3重量%至约7重量%,约0.001重量%至约7重量%,0.001重量%至约10重量%,约1重量%至约10重量%。在其他实施方式中,水可以占组合物的小于50重量%,小于40重量%,小于30重量%,小于25重量%,小于20重量%,小于15重量%,小于10重量%,小于7重量%,小于5重量%,小于3重量%,或小于1重量%。
合适的烷醇胺具有至少两个碳原子并且在不同的碳原子上具有氨基和羟基取代基。合适的烷醇胺包括但不限于乙醇胺,N-甲基乙醇胺,N-乙基乙醇胺,N-丙基乙醇胺,N-丁基乙醇胺,二甲基乙醇胺,二乙基乙醇胺,二乙醇胺,三乙醇胺,N-甲基二乙醇胺,N-乙基二乙醇胺,异丙醇胺,二异丙醇胺,三异丙醇胺,N-甲基异丙醇胺,N-乙基异丙醇胺,N-丙基异丙醇胺,2-氨基丙-1-醇,N-甲基-2-氨基丙-1-醇,N-乙基-2-氨基丙-1-醇,1-氨基丙-3-醇,N-甲基-1-氨基丙-3-醇,N-乙基-1-氨基丙-3-醇,1-氨基丁-2-醇,N-甲基-1-氨基丁-2-醇,N-乙基-1-氨基丁-2-醇,2-氨基丁-1-醇,N-甲基-2-氨基丁-1-醇,N-乙基-2-氨基丁-1-醇,3-氨基丁-1-醇,N-甲基-3-氨基丁-1-醇,N-乙基-3-氨基丁-1-醇,1-氨基丁-4-醇,N-甲基-1-氨基丁-4-醇,N-乙基-1-氨基丁-4-醇,1-氨基-2-甲基丙-2-醇,2-氨基-2-甲基丙-1-醇,1-氨基戊-4-醇,2-氨基-4-甲基戊-1-醇,2-氨基己-1-醇,3-氨基庚-4-醇,1-氨基辛-2-醇,5-氨基辛-4-醇,1-氨基丙-2,3-二醇,2-氨基丙-1,3-二醇,三(羟甲基)氨基甲烷,1,2-二氨基丙-3-醇,1,3-二氨基丙-2-醇,2-(2-氨基乙氧基)乙醇,4-(2-羟乙基)吗啉,1-(2-羟乙基))哌啶和1-(2-羟乙基)哌嗪。
第二溶剂可包括醇,二醇醚,二醇或多羟基化合物,或这些中的两种或更多种的组合。
优选的第二溶剂醇,二醇醚,二醇和多羟基化合物不含酯或胺基团。醇,二醇醚,二醇或多羟基化合物可以是脂族的,脂环族的,环状的或芳族的,但期望地是脂族的或脂环族的。醇,二醇醚,二醇或多羟基化合物可以是饱和的或不饱和的,并且期望地具有一个或更少不饱和键,或不具有不饱和键。醇,二醇醚,二醇和多羟基化合物期望地不含杂原子。醇,二醇醚,二醇和多羟基化合物期望地仅含有碳,氧和氢原子。
作为第二溶剂醇的实例,可以提到的是直链和支链和芳族醇。为了说明醇,溶液可包含甲醇,乙醇,丙醇,异丙醇,丁醇,叔丁醇,叔戊醇,3-甲基-3-戊醇,1-辛醇,1-癸醇,1-十一烷醇,1-十二烷醇,1-十三烷醇,1-十四烷醇,1-十五烷醇,1-十六烷醇,9-十六烯-1-醇,1-十七烷醇,1-十八烷醇,1-十九烷醇,1-二十烷醇,1-二十一烷醇,1-二十二烷醇,13-二十二碳烯-1-醇,1-二十四烷醇,1-二十六烷醇,1-二十七烷醇,1-二十八烷醇,1-三十烷醇,1-三十二烷醇,1-三十四烷醇,鲸蜡硬脂醇,糠醇,四氢糠醇。在说明性实例中,溶液可包含糠醇,四氢糠醇,叔丁醇或3-甲基-3-戊醇中的一种或多种。
如上所述,第二溶剂可以是具有两个或更多个羟基的多羟基化合物。多羟基化合物期望地具有不大于500,或不大于400,或不大于350,或不大于300,或不大于275,或不大于250,或不大于225,或不大于200,或不大于175,或不大于150,或不大于125,或不大于100,或不大于75的分子量。
作为第二溶剂的多羟基化合物可包括乙二醇;1,2-丙二醇(丙二醇);1,3-丙二醇,1,2,3-丙三醇;1,2-丁二醇;1,3-丙二醇;2,3-丁二醇;1,4-丁二醇;1,2,3-丁三醇;1,2,4-丁三醇;1,2-戊二醇;1,3-戊二醇;1,4-戊二醇;2,3-戊二醇;2,4-戊二醇;3,4-戊二醇;1,2,3-戊三醇;1,2,4-戊三醇;1,2,5-戊三醇;1,3,5-戊三醇;驱蚊醇(etohexadiol);对-甲烷-3,8-多羟基化合物;2-甲基-2,4-戊二醇;2,2-二甲基-1,3-丙二醇;甘油;三羟甲基丙烷;木糖醇;阿拉伯糖醇;1,2-或1,3-环戊二醇;1,2-或1,3-环己二醇;2,3-降冰片烷二醇;1,8-辛二醇;1,2-环己烷-二甲醇;1,3-环己烷二甲醇;1,4-环己烷二甲醇;2,2,4-三甲基-1,3-戊二醇;羟基新戊酰基羟基新戊酸酯;2-甲基-1,3-丙二醇;2-丁基-2-乙基-1,3-丙二醇;2-乙基-2-异丁基-1,3-丙二醇;1,6-己二醇;2,2,4,4-四甲基-1,6-己二醇;1,10-癸二醇;1,4-苯二甲醇;氢化双酚A;1,1,1-三羟甲基丙烷;1,1,1-三羟甲基乙烷;季戊四醇;赤藓糖醇;苏糖醇;二季戊四醇;山梨糖醇;甘油;木糖醇;等等,以及上述多羟基化合物中的两种或更多种的组合。
在说明性实例中,溶液可包含乙二醇,1,2-丙二醇(丙二醇),1,3-丙二醇,1,4-戊二醇,1,2-丁二醇,或1,3-丁二醇的第二多羟基溶剂中的一种或多种。
作为第二溶剂的二醇醚化合物可包括3-甲氧基-3-甲基-1-丁醇,二乙二醇甲醚,二乙二醇乙醚,二乙二醇丙醚,丙二醇甲醚,二丙二醇甲醚,丙二醇丙醚,二丙二醇丙醚,丙二醇苯醚,丙二醇正丁醚,二丙二醇正丁醚,乙二醇丙醚,乙二醇丁醚,乙二醇苯醚,三丙二醇甲醚,二丙二醇二甲醚,二乙二醇甲基乙基醚,二乙二醇二甲醚或二乙二醇二乙醚。
组合物还可任选含有一种或多种腐蚀抑制剂。合适的腐蚀抑制剂包括但不限于芳族羟基化合物,例如儿茶酚和间苯二酚;烷基儿茶酚,如甲基儿茶酚,乙基儿茶酚和叔丁基儿茶酚,苯酚类和连苯三酚;芳族三唑,如苯并三唑;烷基苯并三唑;糖醇如甘油,山梨糖醇,赤藓糖醇,木糖醇;羧酸,如甲酸,乙酸,丙酸,丁酸,异丁酸,草酸,丙二酸,琥珀酸,癸二酸,十二烷酸,十一烷酸,戊二酸,马来酸,富马酸,苯甲酸,邻苯二甲酸,1,2,3-苯三甲酸,乙醇酸,乳酸,苹果酸,柠檬酸,乙酸酐,邻苯二甲酸酐,马来酸酐,琥珀酸酐,水杨酸,没食子酸,和没食子酸酯,如没食子酸甲酯和没食子酸丙酯;金属盐,如硝酸铜(II)的水合物,如硝酸铜(II)半(五水合物);上述含羧基有机化合物的有机盐,碱性物质,如三甲胺,二乙胺和吡啶,如2-氨基吡啶,等等,以及螯合化合物,如基于磷酸的螯合化合物,包括1,2-丙二胺四亚甲基膦酸和羟基乙烷膦酸,基于羧酸的螯合化合物,如乙二胺四乙酸及其钠盐和铵盐,二羟乙基甘氨酸和次氮基三乙酸,基于胺的螯合化合物,如联吡啶,四苯基卟啉和菲咯啉,和基于肟的螯合化合物,例如二甲基乙二肟和二苯基乙二肟。可以使用单一腐蚀抑制剂,或者可以使用腐蚀抑制剂的组合。已证明腐蚀抑制剂在约1ppm至约10%的含量下是有用的。在一些实施方式中,溶液可含有约0.001重量%至约3重量%的第一腐蚀抑制剂。在一个实施方式中,第一腐蚀抑制剂是硝酸铜(II)的水合物。在一些实施方式中,溶液可另外含有约0.05重量%至约7重量%的第二腐蚀抑制剂。在其他实施方式中,溶液可含有约0.001重量%至约2重量%,约0.001重量%至约1重量%,0.001重量%至约0.1重量%,约0.01重量%至约3重量%,约0.01重量%至约2重量%,约0.01重量%至约1重量%,至少0.001重量%,至少0.01重量%,至少0.1重量%,少于约0.05重量%,少于约0.1重量%,少于约0.5重量%,少于约1重量%,少于约2重量%和/或少于约3重量%的第一腐蚀抑制剂。在其他实施方式中,溶液可含有约0.05重量%至约5重量%,约0.05重量%至约3重量%,约0.05重量%至约2重量%,约0.05重量%至约1重量%,约0.1重量%至约7重量%,约0.1重量%至约5重量%,约0.1重量%至约3重量%,约0.1重量%至约2重量%,约0.1重量%至约1重量%,至少0.05重量%,至少0.1重量%,至少1重量%,少于1重量%,少于2重量%,少于约3重量%,少于约5重量%和/或少于约7重量%的第二腐蚀抑制剂。第一和第二腐蚀抑制剂不相同。第一腐蚀抑制剂和第二腐蚀抑制剂均可选自上述腐蚀抑制剂。在一些实施方式中,组合物可以基本上不含金属盐。在一些实施方式中,组合物可以基本上不含糖醇。
优选的任选表面活性剂包括含氟表面活性剂。优选的含氟表面活性剂的一个实例是DuPont FSO(氟化调聚物B单醚与聚乙二醇(50%),乙二醇(25%),1,4-二噁烷(<0.1%),水(25%))。优选的含氟表面活性剂的另一个实例是DuPont,Capstone,FS-10(30%全氟烷基磺酸水溶液)。
本发明还提供一种除去至少一个光致抗蚀剂层的方法,其包括以下步骤:使包含至少一个光致抗蚀剂层的衬底与本发明的任一剥离剂溶液在一定温度下接触一段时间,以至少部分地除去所述至少一个光致抗蚀剂层;和在所述接触步骤之后冲洗所述衬底。接触时间通常为10分钟至120分钟;然而,它将取决于层,材料,被除去的残留物及其厚度,剥离剂溶液的温度,以及接触步骤的类型,例如浸渍,喷射或两者的组合,和衬底与清洁溶液之间的任何相对运动。
至少50℃的优选温度优选用于接触衬底,而对于大多数应用,更优选约50℃至约80℃的温度。在另一个实施方式中,优选的温度比溶液的闪点低至少5℃,或比溶液的闪点低至少10℃,或比溶液的闪点低至少20℃。或者,优选的温度低于101℃,或低于96℃,或低于86℃。对于衬底敏感或需要更长除去时间的特定应用,较低的接触温度是合适的。例如,当再加工衬底时,将剥离剂溶液保持在至少20℃的温度下较长时间以除去光致抗蚀剂并避免损坏衬底可能是合适的。
当浸没衬底时,组合物的搅拌额外地促进除去光致抗蚀剂。搅拌可以通过机械搅拌,循环或通过使惰性气体鼓泡经过组合物影响。在除去期望量的光致抗蚀剂后,使衬底从与剥离剂溶液的接触移除,并用水或醇或水性醇溶液冲洗。去离子水是水的优选形式,并且异丙醇是优选的醇。对于具有易受氧化的组分的衬底,冲洗优选在惰性气氛下进行。与现有商业产品相比,根据本公开的优选剥离剂溶液具有改善的对光致抗蚀剂材料的负载能力,并且能够用给定体积的剥离剂溶液处理更多数量的衬底。
本公开中提供的剥离剂溶液可用于除去以单层存在的正性或负性聚合物抗蚀剂材料或某些类型的双层抗蚀剂。例如,双层抗蚀剂通常具有被第二聚合物层覆盖的第一无机层或可具有两个聚合物层。利用下面教导的方法,可以从具有单个聚合物层的标准晶片有效地除去单一聚合物抗蚀剂层。相同的方法也可用于从具有由第一无机层和第二或外层聚合物层组成的双层的晶片除去单聚合物层。最后,可以从具有由两个聚合物层组成的双层的晶片有效地除去两个聚合物层。
制剂可用于除去任何厚度的正性和负性抗蚀剂,优选正性抗蚀剂,其可以是薄的或厚的抗蚀剂。抗蚀剂的厚度可以为1μm至150μm,或1μm至100μm,或2μm至70μm或10μm至100μm。正性光致抗蚀剂的实例包括AZ Electronic Materials的6130和Tokyo OhkaKogyo的TOK PC0421,TOK PW1000和TOK CR4000。可以使用本发明的组合物除去的负性光致抗蚀剂的实例包括JSR Micro的JSR-THB光致抗蚀剂。典型的正性抗蚀剂由酚醛清漆树脂和光酸产生剂组成。典型的负性抗蚀剂由多官能丙烯酸酯,丙烯酸树脂和光敏剂组成。
本公开描述了用于在半导体器件的高级封装应用中除去厚光致抗蚀剂的化学溶液。在一个实施方式中,所描述的溶液含有二乙二醇丁醚(DB),烷醇胺和/或第二溶剂,水,季铵氢氧化物和至少一种腐蚀抑制剂。溶液基本上不含DMSO。在一些实施方式中,烷醇胺是单乙醇胺或2-(2-氨基乙氧基)乙醇。在一些实施方式中,第二溶剂是3-甲基-3-甲氧基-1-丁醇或丙二醇。在一些实施方式中,季铵氢氧化物可以是TMAH,TEAH,ETMAH,氢氧化胆碱或二甲基二丙基氢氧化铵。基本上不含是指小于1%,或者小于0.1%,或者小于0.01%,或者小于0.001%的量。基本上不含也包括不含DMSO。溶液还任选含有表面活性剂。溶液含有少于约10重量%的水。在一个实施方式中,溶液含有约0.001重量%至约10重量%的水。在一些实施方式中,组合物可基本上不含烷醇胺或第二溶剂或者烷醇胺和第二溶剂两者。
本发明的组合物的一些实施方式可以基本上不含或者不含(如前文定义的那些术语)以下中的一种或多于一种:含氮溶剂,双-胆碱盐,三-胆碱盐,氧铵(oxoammomium)化合物,羟胺及其衍生物,甲基二乙醇胺,氨基乙基乙醇胺,过氧化氢,氧化剂,无机酸,有机酸,酸,无机碱,氢氧化钾,吡唑,金属氢氧化物,二醇,多元醇,NMP,表面活性剂,含金属化合物,糖醇和芳族羟基化合物,含氟、溴、氯或碘的化合物;含磷化合物,钠,钙和研磨材料,及其任意的组合。
对于下面描述的实验,观察到并相应记录抗蚀剂去除。如果从晶片试样表面除去所有抗蚀剂,则将抗蚀剂去除定义为“清洁”;如果从表面除去至少95%的抗蚀剂,但不是所有的抗蚀剂,则定义为“大部分清洁”;如果从表面除去至少约80%的抗蚀剂,但少于95%的抗蚀剂,则定义为“部分清洁”。
以下缩写用于下列各种组合物中:DB=二乙二醇丁醚;DMSO=二甲基亚砜;MEA=单乙醇胺;MMB=3-甲氧基-3-甲基-1-丁醇;TMAH=四甲基氢氧化铵;TEAH=四乙基氢氧化铵;DMDPAH=二甲基二丙基氢氧化铵;AEE=2-(2-氨基乙氧基)乙醇。
表1列出了各种本发明的剥离组合物和比较的剥离组合物。
表1.制剂
(所有百分比均为重量百分比,基于制剂的总重量)
实施例1
表2列出了实施例1使用浸没过程和具有60μm-70μm厚的JSR THB-151N负性旋涂光致抗蚀剂、镀Cu柱、Sn/Ag焊料帽的半导体晶片而测试的剥离组合物。对于浸没过程,在烧杯中处理试样大小的半导体晶片样品。在烧杯中装入100mL剥离组合物并加热至目标温度70℃。当剥离组合物处于目标温度时,将试样放入烧杯中的支架中,并通过搅拌棒提供轻微搅拌。在整个过程中使温度保持在70℃的目标温度。在15分钟的总处理时间之后,将试样从烧杯中取出,用去离子水和IPA冲洗,并用空气流干燥。表1中所有组合物的处理温度为70℃。
对于上述实验,观察并相应地记录抗蚀剂去除。如果从晶片试样表面除去所有抗蚀剂,则将抗蚀剂去除定义为“清洁”;如果从表面除去至少95%的抗蚀剂,则定义为“大部分清洁”;如果从表面除去约80%的抗蚀剂,则定义为“部分清洁”。具有DB溶剂和仅4.5%MEA的制剂1不能完全除去负性抗蚀剂。所有其他测试的制剂含有30%MEA并且能够完全除去负性抗蚀剂。
表2.对于Cu柱晶片的抗蚀剂去除结果
制剂 | 对于Cu柱晶片的抗蚀剂去除 |
1 | 部分清洁 |
2 | 清洁 |
3 | 清洁 |
4 | 清洁 |
5 | 清洁 |
6 | 清洁 |
比较1 | 清洁 |
比较2 | 清洁 |
实施例2
表3列出了实施例2使用浸没过程和具有已经通过等离子体干法蚀刻处理的图案化正性光致抗蚀剂的半导体晶片而测试的剥离组合物。对于浸没过程,在烧杯中处理试样大小的半导体晶片样品。在烧杯中装入100mL剥离组合物并加热至目标温度60℃。当剥离组合物处于目标温度时,将试样放入烧杯中的支架中,并通过搅拌棒提供轻微搅拌。在整个过程中使温度保持在60℃的目标温度。在15分钟的总处理时间之后,将试样从烧杯中取出,用去离子水和IPA冲洗,并用空气流干燥。表3中所有组合物的处理温度为60℃。
对于上述实验,观察并相应地记录抗蚀剂去除。如果从晶片试样表面除去所有抗蚀剂,则将抗蚀剂去除定义为“清洁”;如果从表面除去至少95%的抗蚀剂,则定义为“大部分清洁”;如果从表面除去约80%的抗蚀剂,则定义为“部分清洁”。测试的所有制剂都完全除去等离子体处理的正性抗蚀剂。
表3.干法蚀刻后的正性抗蚀剂的抗蚀剂去除结果
制剂 | 对于Cu柱晶片的抗蚀剂去除 |
1 | 清洁 |
9 | 清洁 |
10 | 清洁 |
11 | 清洁 |
12 | 清洁 |
13 | 清洁 |
14 | 清洁 |
实施例3
表4列出了实施例3使用浸没过程以测量固化聚酰亚胺(PI)膜和固化聚苯并噁唑(PBO)膜的蚀刻速率而测试的剥离组合物。使用涂覆有固化空白PI膜或固化空白PBO膜的半导体晶片进行测试。对于浸没过程,在烧杯中处理试样大小的半导体晶片样品。在烧杯中装入100mL剥离组合物并加热至目标温度60℃。当剥离组合物处于目标温度时,将试样放入烧杯中的支架中,并通过搅拌棒提供轻微搅拌。在整个过程中使温度保持在60℃的目标温度。在60分钟的总处理时间之后,将试样从烧杯中取出,用去离子水和IPA冲洗,并用空气流干燥。
在测试的每个试样的处理之前和之后测量聚酰亚胺膜的厚度。每个试样的厚度是两个点的平均值。厚度变化用于计算平均蚀刻速率。影响PI和PBO相容性的因素包括溶剂、烷醇胺和水含量。具有>3%的水的制剂9和比较制剂2表现出最低的PBO蚀刻速率。具有DMSO的比较制剂1和2表现出最高的PI蚀刻速率。具有4.5%MEA的制剂1具有比具有30%MEA的制剂2更低的PI蚀刻速率。由于使用DB溶剂、AEE和>3%的水,仅制剂9对PI和PBO两者具有低蚀刻速率。
表4.在60℃下的PI和PBO蚀刻速率
制剂 | 固化PI的蚀刻速率 | 固化PBO的蚀刻速率 |
1 | <1nm/min | 11.2nm/min |
2 | 11.3nm/min | 7.9nm/min |
9 | 1.6nm/min | 0.7nm/min |
比较1 | 26.7nm/min | 6.4nm/min |
比较2 | 36.0nm/min | 2.2nm/min |
实施例4
表5列出了实施例4使用浸没过程以观察与图案化低温固化PI膜的相容性而测试的剥离组合物。使用涂覆有图案化低温固化PI膜的半导体晶片进行测试。对于浸没过程,在烧杯中处理试样大小的半导体晶片样品。在烧杯中装入100mL剥离组合物并加热至目标温度60℃。当剥离组合物处于目标温度时,将试样放入烧杯中的支架中,并通过搅拌棒提供轻微搅拌。在整个过程中使温度保持在60℃的目标温度。在给定的处理时间之后,将试样从烧杯中取出,用去离子水和IPA冲洗,并用空气流干燥。
在浸渍处理之前和之后通过光学显微镜观察图案化的PI膜。如果处理后图案化PI膜的外观与处理前所作的观察相比没有可观察到的差异,则观察被记录为“无变化”。如果处理后图案化PI膜中观察到处理前不存在的裂缝,则观察被记录为“裂缝形成”。裂缝的形成指示制剂降解PI膜。
制剂1是唯一导致在图案化PI膜中形成裂缝的制剂。制剂1是实施例4测试的唯一含有MEA的制剂,表明MEA可降低与低温固化PI的相容性。
表5.在60℃下与图案化低温固化PI的相容性
制剂 | 时间 | 相容性观察 |
1 | 30min | 裂缝形成 |
9 | 50min | 无变化 |
10 | 50min | 无变化 |
11 | 50min | 无变化 |
12 | 50min | 无变化 |
13 | 50min | 无变化 |
14 | 50min | 无变化 |
实施例5
表6列出了各种制剂的闪点。
表6.闪点
制剂 | 闪点(℃) |
1 | 106.5 |
2 | 99 |
9 | >100 |
比较1 | 96.5 |
比较2 | 89 |
表7列出了各种制剂的凝固点。
表7.凝固点
虽然已经参考一个或多个实施方式描述了本发明,但是本领域技术人员将理解,在不脱离本发明的范围的情况下,可以进行各种改变,并且可以用等同物替换其要素。另外,在不脱离本发明的实质性范围的情况下,可以进行许多修改以使特定情况或材料适应本发明的教导。因此,意图是本发明不限于作为实施本发明的最佳方式公开的特定实施方式,而是本发明将包括落入所附权利要求范围内的所有实施方式。另外,在详细描述中确定的所有数值应被解释为如同精确值和近似值两者都被明确地确定。此外,在说明书和权利要求中对“具有”、“包含”、“含有”等等的任何使用都包括更狭窄的描述符:“基本上由……组成”和“由……组成”,如同它们在“具有”、“包含”、“含有”等等之后交替明确写出一样。另外,用于描述剥离剂组合物的任何组分的冠词“一个/一种(a)”或“所述/该(the)”的使用应解释为在它们在说明书和权利要求中出现的任何地方,如同它们被替换为“一个/一种或多于一个/一种”。如果没有另外说明,所有百分比均按重量计。
Claims (16)
1.一种用于从衬底除去光致抗蚀剂的剥离剂溶液,所述溶液包含:
30重量%至97重量%的二乙二醇丁醚;
1重量%至7重量%的季铵氢氧化物;
1重量%至75重量%的(2-(2-氨基乙氧基)乙醇)或者(2-(2-氨基乙氧基)乙醇)和第二溶剂;
0.001重量%至7重量%的腐蚀抑制剂;和
0.1重量%至20重量%的水;并且
其中所述溶液包含小于1%的量的DMSO。
2.根据权利要求1所述的溶液,其中所述季铵氢氧化物具有取代基,所述取代基是C1-C8烷基、芳烷基、苄基、C1-C5醇及其组合。
3.根据权利要求1或2所述的溶液,其中所述季铵氢氧化物包括四甲基氢氧化铵、四乙基氢氧化铵、乙基三甲基氢氧化铵、二甲基二丙基氢氧化铵或氢氧化胆碱中的至少一种。
4.根据权利要求1-3中任一项所述的溶液,其中所述(2-(2-氨基乙氧基)乙醇)以3重量%至50重量%的量存在。
5.根据权利要求1-4中任一项所述的溶液,其中所述第二溶剂以5重量%至30重量%的量存在。
6.根据权利要求1-5中任一项所述的溶液,其中所述第二溶剂包括3-甲氧基-3-甲基-1-丁醇或丙二醇。
7.根据权利要求1-6中任一项所述的溶液,
其中所述二乙二醇丁醚以50重量%至97重量%的量存在;
其中所述季铵氢氧化物以1重量%至6重量%的量存在;
其中所述(2-(2-氨基乙氧基)乙醇)以3重量%至40重量%的量存在;
其中所述水以0.1重量%至7重量%的量存在;和
其中第一腐蚀抑制剂以0.001重量%至3重量%的量存在。
8.根据权利要求7所述的溶液,其中所述第一腐蚀抑制剂以0.001重量%至0.1重量%的量存在。
9.根据权利要求1-8中任一项所述的溶液,其中所述腐蚀抑制剂包括选自间苯二酚、甘油、山梨糖醇和硝酸铜(II)的水合物的第一腐蚀抑制剂。
10.根据权利要求9所述的溶液,所述硝酸铜(II)的水合物是硝酸铜(II)半(五水合物)。
11.根据权利要求9所述的溶液,所述溶液还包含0.05重量%至7重量%的第二腐蚀抑制剂。
12.根据权利要求11所述的溶液,其中所述第二腐蚀抑制剂不同于所述第一腐蚀抑制剂,并且选自间苯二酚、甘油、山梨糖醇和硝酸铜(II)半(五水合物)。
13.根据权利要求1-12中任一项所述的溶液,其中所述凝固点低于-15℃并且所述闪点高于97℃。
14.根据权利要求1-13中任一项所述的溶液,其中所述凝固点低于-19℃。
15.一种用于从衬底除去光致抗蚀剂的剥离剂溶液,所述溶液包含:
50重量%至97重量%的二乙二醇丁醚;
1重量%至5重量%的季铵氢氧化物;
3重量%至40重量%的(2-(2-氨基乙氧基)乙醇);
0.001重量%至1重量%的腐蚀抑制剂;和
1重量%至10重量%的水;
其中二乙二醇丁醚的量与水的量的比率大于5;
其中所述溶液表现出高于95℃的闪点;并且
其中所述溶液包含小于1%的量的DMSO。
16.一种除去至少一个光致抗蚀剂层的方法,所述方法包括以下步骤:
使包含至少一个光致抗蚀剂层的衬底与如权利要求1-15中任一项所述的剥离剂溶液在一定温度下接触一段时间,以至少部分地除去所述至少一个光致抗蚀剂层;和
在所述接触步骤之后冲洗所述衬底。
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US11378886B2 (en) | 2020-09-29 | 2022-07-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for removing resist layer, and method of manufacturing semiconductor |
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