CN110176379B - 带电粒子束装置和试样加工观察方法 - Google Patents

带电粒子束装置和试样加工观察方法 Download PDF

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Publication number
CN110176379B
CN110176379B CN201910126745.5A CN201910126745A CN110176379B CN 110176379 B CN110176379 B CN 110176379B CN 201910126745 A CN201910126745 A CN 201910126745A CN 110176379 B CN110176379 B CN 110176379B
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ion beam
sample
charged particle
gas ion
column
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Chinese (zh)
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CN110176379A (zh
Inventor
山本洋
酉川翔太
铃木秀和
铃木浩之
冈部卫
麻畑达也
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Hitachi High Tech Analysis Co ltd
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Hitachi High Tech Science Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3005—Observing the objects or the point of impact on the object
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/14—Lenses magnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H01J2237/0264—Shields magnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/103—Lenses characterised by lens type
    • H01J2237/1035—Immersion lens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/14—Lenses magnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
CN201910126745.5A 2018-02-20 2019-02-20 带电粒子束装置和试样加工观察方法 Active CN110176379B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018028166A JP7031859B2 (ja) 2018-02-20 2018-02-20 荷電粒子ビーム装置、試料加工観察方法
JP2018-028166 2018-02-20

Publications (2)

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CN110176379A CN110176379A (zh) 2019-08-27
CN110176379B true CN110176379B (zh) 2024-04-30

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US (1) US10622187B2 (enExample)
JP (1) JP7031859B2 (enExample)
KR (1) KR102772061B1 (enExample)
CN (1) CN110176379B (enExample)
TW (1) TWI803572B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6867015B2 (ja) * 2017-03-27 2021-04-28 株式会社日立ハイテクサイエンス 自動加工装置
JP2018196794A (ja) * 2018-09-20 2018-12-13 株式会社ユニバーサルエンターテインメント 遊技機
TWI872112B (zh) * 2019-09-25 2025-02-11 日商日立高新技術科學股份有限公司 聚焦離子束裝置
CN110718439B (zh) * 2019-09-30 2020-12-18 中国科学院长春光学精密机械与物理研究所 离子束加工设备
DE102019133658A1 (de) * 2019-12-10 2021-06-10 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zum Bearbeiten einer mikrostrukturierten Komponente
JP2021148542A (ja) * 2020-03-18 2021-09-27 株式会社日立ハイテクサイエンス 生体組織試料の観察方法
JPWO2024180577A1 (enExample) * 2023-02-27 2024-09-06
CN118588522B (zh) * 2024-08-06 2024-11-08 北京惠然肯来科技中心(有限合伙) 用于带电粒子束装置的载物单元及相关产品

Citations (8)

* Cited by examiner, † Cited by third party
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JP2011203266A (ja) * 2011-05-27 2011-10-13 Sii Nanotechnology Inc 薄片試料作製方法
CN102308357A (zh) * 2009-02-06 2012-01-04 株式会社日立高新技术 带电粒子束装置
CN102315066A (zh) * 2010-07-05 2012-01-11 精工电子纳米科技有限公司 带电粒子束装置以及试样加工方法
JP2013234855A (ja) * 2012-05-07 2013-11-21 Japan Fine Ceramics Center 試料の作製方法およびダメージ層除去装置
TW201541496A (zh) * 2014-01-22 2015-11-01 Hitachi High Tech Science Corp 帶電粒子束裝置及試料觀察方法
JP2016143532A (ja) * 2015-01-30 2016-08-08 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置および欠陥検査システム
JP2016156656A (ja) * 2015-02-23 2016-09-01 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置
CN107204269A (zh) * 2016-03-18 2017-09-26 日本株式会社日立高新技术科学 复合带电粒子束装置

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JP3041600B2 (ja) * 1998-05-19 2000-05-15 セイコーインスツルメンツ株式会社 複合荷電粒子ビーム装置
JP4431459B2 (ja) * 2004-07-29 2010-03-17 株式会社日立ハイテクノロジーズ 集束イオン・ビーム装置及び集束イオン・ビーム照射方法
JP2007164992A (ja) 2005-12-09 2007-06-28 Sii Nanotechnology Inc 複合荷電粒子ビーム装置
JP4795847B2 (ja) * 2006-05-17 2011-10-19 株式会社日立ハイテクノロジーズ 電子レンズ及びそれを用いた荷電粒子線装置
JP4789260B2 (ja) * 2006-08-23 2011-10-12 エスアイアイ・ナノテクノロジー株式会社 荷電粒子ビーム装置及びアパーチャの軸調整方法
JP5039961B2 (ja) 2007-04-24 2012-10-03 エスアイアイ・ナノテクノロジー株式会社 三次元画像構築方法
US8269194B2 (en) * 2007-08-08 2012-09-18 Sii Nanotechnology Inc. Composite focused ion beam device, and processing observation method and processing method using the same
JP5410975B2 (ja) * 2007-08-08 2014-02-05 株式会社日立ハイテクサイエンス 複合集束イオンビーム装置及びそれを用いた加工観察方法
JP5292348B2 (ja) 2010-03-26 2013-09-18 株式会社日立ハイテクノロジーズ 複合荷電粒子線装置
JP6250331B2 (ja) * 2012-08-30 2017-12-20 株式会社日立ハイテクサイエンス 複合荷電粒子ビーム装置及び薄片試料加工方法
JP6382495B2 (ja) * 2013-09-02 2018-08-29 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置

Patent Citations (8)

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Publication number Priority date Publication date Assignee Title
CN102308357A (zh) * 2009-02-06 2012-01-04 株式会社日立高新技术 带电粒子束装置
CN102315066A (zh) * 2010-07-05 2012-01-11 精工电子纳米科技有限公司 带电粒子束装置以及试样加工方法
JP2011203266A (ja) * 2011-05-27 2011-10-13 Sii Nanotechnology Inc 薄片試料作製方法
JP2013234855A (ja) * 2012-05-07 2013-11-21 Japan Fine Ceramics Center 試料の作製方法およびダメージ層除去装置
TW201541496A (zh) * 2014-01-22 2015-11-01 Hitachi High Tech Science Corp 帶電粒子束裝置及試料觀察方法
JP2016143532A (ja) * 2015-01-30 2016-08-08 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置および欠陥検査システム
JP2016156656A (ja) * 2015-02-23 2016-09-01 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置
CN107204269A (zh) * 2016-03-18 2017-09-26 日本株式会社日立高新技术科学 复合带电粒子束装置

Also Published As

Publication number Publication date
TW201942943A (zh) 2019-11-01
CN110176379A (zh) 2019-08-27
JP2019145328A (ja) 2019-08-29
US10622187B2 (en) 2020-04-14
KR20190100025A (ko) 2019-08-28
TWI803572B (zh) 2023-06-01
JP7031859B2 (ja) 2022-03-08
US20190259574A1 (en) 2019-08-22
KR102772061B1 (ko) 2025-02-25

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Address after: Tokyo, Japan

Patentee after: Hitachi High Tech Analysis Co.,Ltd.

Country or region after: Japan

Address before: Tokyo, Japan

Patentee before: HITACHI HIGH-TECH SCIENCE Corp.

Country or region before: Japan