CN110168721A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN110168721A
CN110168721A CN201780082739.3A CN201780082739A CN110168721A CN 110168721 A CN110168721 A CN 110168721A CN 201780082739 A CN201780082739 A CN 201780082739A CN 110168721 A CN110168721 A CN 110168721A
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CN
China
Prior art keywords
electrode
frame part
semiconductor device
semiconductor element
fitting portion
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Granted
Application number
CN201780082739.3A
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English (en)
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CN110168721B (zh
Inventor
村松佑哉
别芝范之
石井隆一
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of CN110168721A publication Critical patent/CN110168721A/zh
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Abstract

半导体装置(1)具备：陶瓷基板(21)，在两面具有导体层(23、24)；半导体元件(11)，被接合到陶瓷基板(21)的上表面导体层(23)上；框部件(61)，在上表面导体层(23)上以包围半导体元件(11)的侧面的方式配置；以及电极(41)，通过第2粘结层(32)被接合到半导体元件(11)的上部，并且在侧面形成嵌合部(42)。在框部件(61)的内壁形成：嵌合部(62)，嵌合到电极(41)的嵌合部(42)；以及4个定位部(63)，从该框部件(61)的内壁延伸至电极(41)的侧面。

Description

半导体装置
技术领域
本发明涉及半导体装置，特别涉及电极被接合到半导体元件的半导体装置。
背景技术
近年来，半导体装置不仅是一般用于工业、用于电力铁道而且还广泛使用于车载用途。特别，在车载用途中，如果通过使得电力用的半导体装置小型化并且耐振化而能够搭载于车辆内特别是振动大的引擎、变速箱的附近，则引擎室内的零件布局的自由度提高，能够实现车辆整体的小型化。即，强烈要求半导体装置的小型化和耐振化。
如后详述，为了使半导体装置小型化并且耐振化，在半导体装置内将电极接合到半导体元件时，需要高的安装精度。在专利文献1中，记载了如下发明：为了抑制在将板状的电极接合到半导体元件时产生的位置偏移，以包围接合在陶瓷基板上的半导体元件的方式配置框部件，在框部件的内壁形成凸部，并且在电极的侧面形成凹部，在将电极接合到半导体元件时，使电极的侧面的凹部和框部件的凸部嵌合，从而将电极的位置偏移抑制为最小限。
现有技术文献
专利文献
专利文献1：日本特开2016-051878号公报
发明内容
然而，在专利文献1记载的发明中，通过使电极的侧面的凹部和框部件的凸部嵌合，防止将电极接合到半导体元件时的位置偏移，但为此，需要使电极的凹部比框部件的凸部稍大地形成，来设置用于将电极插入到框部件内的间隙。因此，在将电极插入到框部件内的过程中由于该板状的电极与半导体元件的上表面平行地旋转而产生位置偏移，存在安装精度降低的可能性。
本发明是鉴于如上述的情况而完成的，其目的在于提供一种在将电极接合到半导体元件时能够实现高的安装精度的半导体装置。
本发明的特征在于，具备：陶瓷基板，在两面具有导体层；半导体元件，被接合到陶瓷基板的一方的导体层上；框部件，在一方的导体层上以包围半导体元件的侧面的方式配置；以及电极，通过粘结层被接合到半导体元件的上部，并且在侧面形成第1嵌合部，在框部件的内壁形成有：第2嵌合部，嵌合到电极的第1嵌合部；以及第1定位部，从该框部件的内壁延伸至电极的侧面。
根据本发明所涉及的半导体装置，在将电极接合到半导体元件时能够实现高的安装精度。
附图说明
图1是本发明的实施方式1所涉及的半导体装置的上面图。
图2是图1的A-A’剖面图。
图3是图1的B-B’剖面图。
图4是示出本发明的实施方式1所涉及的半导体装置中的、第2粘结层的端部的形状的2个例子的图。
图5是示出本发明的实施方式1所涉及的半导体装置中的、框部件与电极之间的间隙的详情的图。
图6是本发明的实施方式1的变形例所涉及的半导体装置的上面图。
图7是将多个本发明的实施方式1所涉及的半导体装置模块化而构成的半导体系统的立体图。
图8是本发明的实施方式1的其它变形例所涉及的半导体装置的剖面图。
图9是本发明的实施方式1所涉及的半导体装置的剖面图。
图10是本发明的实施方式2所涉及的半导体装置的上面图。
图11是图10的A-A’剖面图。
图12是本发明的实施方式2所涉及的半导体装置的剖面图。
图13是本发明的实施方式3所涉及的半导体装置的上面图。
图14是图13的A-A’剖面图。
具体实施方式
以下，参照附图，详细说明本申请公开的半导体装置的实施方式。但是，以下所示的实施方式是一个例子，本发明不限定于这些实施方式。
实施方式1.
图1是本发明的实施方式1所涉及的电力用的半导体装置1的上面图。另外，图2是图1的A-A’剖面图，图3是图1的B-B’剖面图。此外，在以后的说明中，将图1～3的Z轴的正方向定义为上朝向。
如图1～3所示，电力用的半导体元件11载置于陶瓷基板21上。更详细而言，陶瓷基板21包括陶瓷层22、上表面导体层23以及下表面导体层24，半导体元件11通过第1粘结层31被粘结到陶瓷基板21的上表面导体层23上。
作为陶瓷层22的材料，优选为AlN、Si3N4、Al2O3等具有绝缘性并且热传导性高的材料。另外，作为陶瓷层22的厚度，作为工业用使用0.3mm至1mm左右。
作为上表面导体层23以及下表面导体层24的材料，优选为Cu、Al、或者Cu和Al的层叠体等。另外，作为上表面导体层23以及下表面导体层24的厚度，作为工业用使用0.2mm至1mm左右。关于上表面导体层23以及下表面导体层24，越厚则从半导体元件11的散热性越高，但越厚则针对陶瓷层22的热应力也越提高。因此，为了防止破损，需要将余量确保得较大，在实用上，多使用0.3mm左右。
第1粘结层31优选为焊料、或者包含Ag、Cu的导体材料等具有导电性并且能够实现机械性的粘结的金属系的物质。特别，通过使用Ag等高熔点的材料，能够提高半导体元件11的动作温度提高时的第1粘结层31的可靠性。
作为半导体元件11的材料，通常使用Si，但也可以使用GaN、SiC等能够进行高温动作的原材料。使用这样的能够进行高温动作的材料更能够使半导体装置1的整体小型化，所以更优选。
另外，在上表面导体层23和半导体元件11的上表面，安装有主电路用的板状的电极41。更详细而言，电极41通过第2粘结层32被接合到半导体元件11上。如图3所示，电极41的一端在半导体装置1的上方露出。
电极41的材料优选为Cu、Cu合金等具有高的电气传导性并且易于在工业上使用的材料。另外，电极41还承担使在半导体元件11的表面产生的热向外部扩散的作用，所以还需要热传导率高。因此，特别优选使用Cu。
作为电极41的厚度，使用0.2mm～1mm左右的金属材料。厚度越大，向半导体元件11的热应力越大，相反如果过薄，则通电时的电气电阻所致的电阻发热成为问题，所以需要选择适合的厚度。另外，根据需要，形成用于降低应力的孔等而降低外表上的刚性，降低热应力的做法也有效。
作为第2粘结层32的材料，优选为焊料、Ag、Cu或者CuSn合金等具有导电性的材料。另外，第2粘结层32与半导体元件11直接接触，所以优选为高熔点。其原因为，具有在再结晶温度以上使用金属时，结晶粒界由于扩散移动而结晶粒粗大化，对抗金属疲劳能力变弱这样的性质。因此，根据长期可靠性的观点，优选使用在接合时是低熔点但在接合中熔点上升的Ag烧结材料、Cu烧结材料、CnSn烧结材料等。
另外，关于电极41和半导体元件11的接合部分，在需要特别高的可靠性的情况下，不仅在电极41的材料中使用Cu，而且使电极41的线膨胀系数接近半导体元件11的线膨胀系数(例如对于硅为2.5ppm/K)的做法有效。
例如，在用将Cu、殷钢(Fe-36％Ni合金)以及Cu层叠3层而成的包层材料构成电极41的情况下，能够根据厚度比，控制电极41的外表上的线膨胀系数。在增大了殷钢的比例的情况下，成为4ppm/K(Cu：Invar：Cu＝1：8：1)，在减小了殷钢的比例的情况下，成为13ppm/K(Cu：Invar：Cu＝2：1：2)。由此，能够使电极41的外表上的线膨胀系数在硅(2.5ppm/K)与铜(17ppm/K)之间自由地变化。
根据以上，在缓和电极41和半导体元件11的线膨胀系数的差时，位于两者之间的第2粘结层32的形变量被降低，能够提高电极41和半导体元件11的接合部分的可靠性。
另外，在上表面导体层23上，以包围半导体元件11的方式配置有框部件61。在框部件61的内壁，在相向的位置形成有嵌合部(第2嵌合部)62。另外，在电极41的侧面，在与框部件61的嵌合部62对应的位置形成有嵌合部(第1嵌合部)42。进而，在框部件61的内壁，形成有从该框部件61的内壁延伸至电极41的侧面的4个定位部(第1定位部)63。为了形成这样的形状，电极41优选用穿孔加工等机械加工来加工。
在将电极41接合到半导体元件11时，将电极41插入到框部件61内，向下方押下。此时，电极41的嵌合部42与框部件61的嵌合部62嵌合，电极41的侧面被插入到由框部件61的4个定位部63的各前端部形成的区域。即，框部件61起到电极41的定位引导的作用。
另外，框部件61的一边的底部朝向内侧突出，在其上配置有端子台71。半导体元件11和端子台71通过由Al、Cu、Au等形成的信号线51电连接。
作为框部件61的材料，优选为能够射出成形并且耐热性高的树脂材料。例如，特别优选为PPS(聚苯硫醚)、液晶树脂、氟系树脂等。作为固定框部件61的方法，优选为硅系的柔软的粘接剂。另外，虽然在图1～3中未示出，在框部件61的内侧注入密封树脂，电极41、半导体元件11被树脂密封。
接下来，说明本发明的实施方式1所涉及的半导体装置1的作用。
作为本发明所涉及的半导体装置1的一个应用例，能够考虑驱动车载马达等的逆变器。在马达的驱动时通常流过几百安培的电流，所以由于与马达的负载的增减相伴的温度变化，在半导体装置1的内部的接合部分(第1粘结层31、第2粘结层32)产生热应力所致的形变。此时，为了防止由于反复的温度变化而接合部分劣化破损，需要减小在接合部分产生的热应力所致的形变。
一般，热应力所致的形变在材料之间的线膨胀系数的差大的部位成为最大。例如，在第2粘结层32的附近，相比于电极41与第2粘结层32之间，第2粘结层32与半导体元件11之间的线膨胀系数的差更大。另外，形变的大小还受到第2粘结层32的端部的形状的影响。
图4示出第2粘结层32的端部的形状的2个例子。如图4(a)所示，在第2粘结层32的端部相对半导体元件11的被粘结面12成为锐角时，形变变大。另一方面，如图4(b)所示，在第2粘结层32的端部相对半导体元件11的被粘结面12成为钝角时，形变变小。即，为了减小热应力所致的形变，使第2粘结层32的端部的形状如图4(b)所示成为钝角变得重要。
为了按照意图形成第2粘结层32的端部的形状，防止将电极41通过第2粘结层32接合到半导体元件11时的位置偏移是重要的。如上所述，在专利文献1中，通过使电极的侧面的凹部和框部件的凸部嵌合，防止将电极通过粘结层接合到半导体元件时的位置偏移。然而，为此，需要使电极的凹部比框部件的凸部稍大地形成，而设置用于将电极插入到框部件内的间隙。因此，在将电极插入到框部件内的过程中由于该板状的电极与半导体元件的上表面平行地旋转而产生偏移，存在无法使粘结层的端部的形状形成为依照意图的钝角的可能性。
相对于此，在本发明的实施方式1所涉及的半导体装置1中，形成电极41的嵌合部42，并且在框部件61的内壁形成：嵌合部62，嵌合到电极41的嵌合部42；以及4个定位部63，从该框部件61的内壁延伸至电极41的侧面。由此，在将电极41插入到框部件61内的过程中通过4个定位部63防止电极41旋转，所以在将电极41通过第2粘结层32接合到半导体元件11时，能够实现高的安装精度。
另外，如图5所示，通过使框部件61的定位部63与电极41的侧面之间的间隙D2小于框部件61的嵌合部62与电极41的嵌合部42之间的间隙D1，能够进一步提高电极41的安装精度。间隙D1、D2是在框部件61中使电极41在X方向上定位时作出贡献的间隙。
另外，仅通过简单地减小电极41与框部件61的嵌合部62、框部件61的定位部63之间的间隙，将电极41插入到框部件61内时的作业性有可能变差。因此，如图3所示，通过成为使框部件61的嵌合部62的高度高于框部件61的定位部63的高度，首先使电极41的嵌合部42嵌合到框部件61的嵌合部62，之后将电极41的侧面插入到由框部件61的4个定位部63的各前端部形成的区域的结构，能够防止将电极41插入到框部件61时的作业性的恶化。
另外，框部件61的嵌合部62的高度优选高于信号线51的上端。由此，无需与易于变形的信号线51接触而能够将电极41插入到框部件61内。
另外，框部件61的定位部63的高度优选为至少与电极41的上表面相同的高度，更优选超过电极41的上表面而高该电极41的厚度程度。由此，能够防止由于搬送时的振动等而电极41载置到框部件61的定位部63而成为接合不良的情况。
此外，在上述例子中在框部件61形成有4个定位部63，但为了防止电极41的旋转，框部件61的定位部63优选在由电极41的纵横的中心线划分的4个区域中，在不同的区域至少形成2个。但是，在上述4个区域中，在对角的区域形成有2个定位部63的情况下，仅能够防止一个方向的旋转，所以这样的定位部63的形成方法不优选。
另外，为了发挥本发明的效果，也可以如图6所示，使电极41和框部件61的凹凸关系相反，在电极41形成嵌合部42’，并且在框部件61形成嵌合部62’。
另外，也可以在框部件61的嵌合部62以及定位部63设置锥体。通过设置锥体，将电极41插入到框部件61时的作业性能够进一步改善。
在图7中，示出将多个本发明的实施方式1所涉及的半导体装置1模块化而构成的半导体系统100的立体图。
在半导体系统100中，在板状的散热部件81上载置有6个半导体装置1。更详细而言，各半导体装置1的陶瓷基板21的下表面导体层24通过第3粘结层(未图示)，被接合到散热部件81上。
作为散热部件81的材料，优选为Al、Cu、CuMo合金、SiCAL等热传导率高的材料。另外，在载置半导体元件11的陶瓷基板21与散热部件81之间的线膨胀系数的差大时，难以确保第3粘结层的耐久性，所以为了确保高的耐久性，特别优选为CuMo合金、SiCAl等线膨胀系数小的材料。
作为第3粘结层的材料，优选为散热性高且长期劣化少的材料。但是，在温度上，从半导体元件11的间隔大，所以即便是焊料等，也能够充分耐受实用。当然，还能够使用具有高温下的耐久性的Ag烧结材料、Cu烧结材料、CuSn烧结材料等。
另外，在散热部件81上，配置有包围各半导体装置1的框部件61的周围的外部框部件82。另外，在外部框部件82的内壁，接合有对各半导体装置1共同的外部电极83。在各半导体装置1的电极41的上方露出的部分与外部电极83电气并且机械性地接合。
如上所述，在车载用的半导体装置中，要求高的耐振性。特别，各半导体装置1的电极41和外部电极83的接合部是最需要耐振性的部分。作为对电极41和外部电极83的接合部附加高的耐振性的方法，考虑对接合部进行螺钉紧固的方法、对接合部进行焊接而一体化的方法等。但是，在对接合部进行螺钉紧固的方法中，需要确保螺母的座面空间，存在阻碍半导体系统100的小型化的担心。
相对于此，在用TIG焊接将电极41和外部电极83接合而一体化的方法中，如果能够防止焊接时的卡盘零件的干扰，则相比于螺钉紧固的方法，能够使半导体系统100小型化。另外，如果能够采用激光焊接等针对焊接部间接地传递能量的方法，则有能够使半导体系统100进一步小型化的可能性。
此外，在通过TIG焊接使电极41和外部电极83一体化而提高耐振性的情况下，如果焊接时无法维持电极之间被密接的状态，则成为焊接分开的状态而得不到良好的接合性。作为使电极41和外部电极83密接的方法，一般一边将2个电极卡住而缩小距离一边焊接。
但是，伴随矫正量的增大，对电极41的基部的第2粘结层32、半导体元件11施加外部应力，所以需要充分地抑制矫正量。为了抑制该矫正量，使各半导体装置1中的电极41的安装精度提高变得重要。如上所述，在本发明中，各半导体装置1的电极41的安装精度提高，所以能够抑制焊接时的电极41的矫正量。
此外，为了实现更高的耐振性，优选增大各半导体装置1的电极41的上升部分的R，较大地确保避免伸缩或振动的应力缓和。另外，也可以如图8所示，通过在电极41成为垂直的部分设置S字型的通气孔41S，确保应力缓和。
进而，如果各半导体装置1的框部件61和电极41被过于强固地固定，则无法释放施加到电极41的应力，所以框部件61优选能够稍微变形。为此，优选用上述PPS、液晶树脂、氟系树脂等构成框部件61，使其厚度成为1mm以下程度。
实施方式2.
接下来，说明本发明的实施方式2所涉及的半导体装置201。
在用焊料构成上述实施方式1所涉及的半导体装置1的第2粘结层32的材料的情况下，作为供给焊料的方法，有使用膏状的焊料的方法、和使用板状的焊料的方法。
膏状的焊料由于包含有还原作用的焊剂成分而易于供给，但在接合时焊剂成分使得产生空隙，所以使散热性恶化。另外，由于焊剂而周围受到污染，所以在接合后需要洗净。
另一方面，板状的焊料需要供给后的定位和还原气氛下的接合，但由于不包含焊剂成分，所以空隙的产生少，且向周围的污染也少。因此，为了提高半导体装置1的质量，优选使用板状的焊料。
在电极41和半导体元件11的接合中使用板状的焊料时，预先在电极41的底面配置板状焊料，用冲压机等加压而使焊料塑性变形，从而将焊料固定到电极41。之后，加热而使焊料熔融，从而使电极41接合到半导体元件11。此外，通过夹具进行焊料的定位的方法由于难以防止向半导体元件11的接触、难以设置和拆下夹具而不优选。
另外，第2粘结层32的端部的形状还受到电极41的底面的面积和半导体元件11的被粘结面12的面积的大小关系的影响，为了使线膨胀系数的差大的半导体元件11侧的第2粘结层32的端部的形状成为钝角，优选使半导体元件11的被粘结面12的面积大于电极41的底面的面积。此外，电极41的底面是指，粘结层232与电极41接合的部分。
然而，如果简单地使半导体元件11的被粘结面12的面积大于电极41的底面的面积，则需要与半导体元件11的被粘结面12的面积等同的面积的板状焊料，所以板状焊料的面积大于电极41的底面的面积。因此，如图9所示，在将电极41插入到框部件61的过程中，板状焊料32接触到框部件61的定位部63而脱落。
本发明的实施方式2所涉及的半导体装置201用于解决这样的问题。图10是本发明的实施方式2所涉及的电力用的半导体装置201的上面图。另外，图11是图2的A-A’剖面图。此外，在以后的说明中，将图10～11的Z轴的正方向定义为上朝向。另外，电极241以及半导体元件11中的“宽度”是指X轴方向的长度。
如图10～11所示，在电极241的侧面，在与框部件61的4个定位部63对应的位置，形成有4个定位部(第2定位部)243。由此，半导体元件11的被粘结面12的宽度比电极241的底面的宽度宽，配置于电极241的底面的板状焊料比框部件61的定位部63位于更靠内侧。因此，如图12所示，在将电极241插入到框部件61的过程中，能够在防止板状焊料232接触到框部件61的定位部63而脱落的同时，使第2粘结层232的半导体元件11侧的端部的形状成为钝角。
框部件61的嵌合部62和电极241的嵌合部242优选处于2个半导体元件11之间。在半导体元件11的边的任意的位置有框部件61的嵌合部62和电极241的嵌合部242的情况下，电极241的嵌合部242需要起到Y方向的定位、和防止板状焊料232与框部件61的嵌合部62接触这样的两个作用。因此，相比于框部件61的嵌合部62和电极241的嵌合部242处于2个半导体元件11之间的情况，必需使电极241的嵌合部242在X方向上长。在该情况下，电极241的穿孔所需的母材的面积增加，成本增大。
另外，如图12所示，电极241的定位部243优选仅形成于该电极241的侧面的上部。通过这样构成，电极241的底面的宽度即便在定位部243的位置也不变化，所以该部分中的第2粘结层242的端部的形状也能够成为钝角。
实施方式3.
接下来，说明本发明的实施方式3所涉及的半导体装置301。
图13是本发明的实施方式3所涉及的电力用的半导体装置301的上面图。另外，图14是图13的A-A’剖面图。此外，在以后的说明中，将图13～14的Z轴的正方向定义为上朝向。
如图13～14所示，在半导体装置301中，电极341中的不位于半导体元件11的被粘结面12的正上方的部位向上侧折弯。由此，能够使电极341的底面的面积小于半导体元件11的被粘结面12的面积，能够使第2粘结层332中的半导体元件11侧的端部的形状成为钝角。
在实施方式3的形状的情况下，优选框部件361的嵌合部362是凹形状，电极341的嵌合部342是凸形状。在半导体元件11的间隔窄的情况下，在电极341的嵌合部342是凹形状时，使电极341折弯而变得倾斜的部分成为凹形状，电极341的尺寸精度易于变差。相对于此，如果电极341的嵌合部342是凸形状，则通过在电极342的成为峰的部分形成凸形状，能够防止尺寸精度的恶化。
另外，与实施方式2的图12同样地，电极341的定位部343优选仅形成于该电极341的侧面的上部。通过这样构成，电极341的底面的宽度即便在定位部343的位置也不变化，所以该部分中的第2粘结层342的端部的形状也能够成为钝角。

Claims (6)

1.一种半导体装置，具备：
陶瓷基板，在两面具有导体层；
半导体元件，被接合到所述陶瓷基板的一方的导体层上；
框部件，在所述一方的导体层上以包围所述半导体元件的侧面的方式配置；以及
电极，通过粘结层被接合到所述半导体元件的上部，并且在侧面形成第1嵌合部，
在所述框部件的内壁形成：
第2嵌合部，嵌合到所述电极的所述第1嵌合部；以及
第1定位部，从该框部件的内壁延伸至所述电极的侧面。
2.根据权利要求1所述的半导体装置，其中，
所述框部件的所述第1定位部与所述电极的侧面之间的间隙比所述框部件的所述第2嵌合部与所述电极的所述第1嵌合部之间的间隙更小地形成。
3.根据权利要求1或者2所述的半导体装置，其中，
所述框部件的所述第2嵌合部的高度比所述第1定位部的高度更高地形成。
4.根据权利要求1～3中的任意一项所述的半导体装置，其中，
在所述电极的侧面，在与所述框部件的所述第1定位部对应的位置形成第2定位部，所述半导体元件的被粘结面的宽度比所述电极的底面的宽度宽。
5.根据权利要求4所述的半导体装置，其中，
所述电极的所述第2定位部仅形成于该电极的侧面的上部。
6.根据权利要求1～5中的任意一项所述的半导体装置，其中，
所述电极中的不位于所述半导体元件的被粘结面的正上方的部位向上侧折弯，所述半导体元件的被粘结面的面积比所述电极的底面的面积宽。
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JPH1168035A (ja) * 1997-06-12 1999-03-09 Hitachi Ltd パワー半導体モジュール
CN104303299A (zh) * 2012-05-15 2015-01-21 松下知识产权经营株式会社 半导体装置的制造方法及半导体装置
JP2015041716A (ja) * 2013-08-23 2015-03-02 三菱電機株式会社 電力用半導体装置および電力用半導体装置の製造方法
JP2016051878A (ja) * 2014-09-02 2016-04-11 三菱電機株式会社 電力用半導体装置

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JPH1168035A (ja) * 1997-06-12 1999-03-09 Hitachi Ltd パワー半導体モジュール
CN104303299A (zh) * 2012-05-15 2015-01-21 松下知识产权经营株式会社 半导体装置的制造方法及半导体装置
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JP2016051878A (ja) * 2014-09-02 2016-04-11 三菱電機株式会社 電力用半導体装置

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