CN110137316B - 一种基于N-ZnO/N-GaN/N-ZnO异质结的双向紫外发光二极管及制备方法 - Google Patents

一种基于N-ZnO/N-GaN/N-ZnO异质结的双向紫外发光二极管及制备方法 Download PDF

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CN110137316B
CN110137316B CN201910338046.7A CN201910338046A CN110137316B CN 110137316 B CN110137316 B CN 110137316B CN 201910338046 A CN201910338046 A CN 201910338046A CN 110137316 B CN110137316 B CN 110137316B
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徐春祥
刘威
石增良
李竹新
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Southeast University
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Abstract

本发明公开了一种基于N‑ZnO/N‑GaN/N‑ZnO异质结的双向紫外发光二极管及制备方法，二极管包括：N‑ZnO微米线、N型GaN薄膜、PMMA保护层和合金电极；方法包括如下步骤：将两根N‑ZnO微米线平铺在N‑GaN薄膜上，旋涂PMMA保护层固定N‑ZnO微米线，至PMMA保护层漫过N‑ZnO微米线，在烘干台上使PMMA保护层凝固，然后利用O2将PMMA保护层刻蚀至N‑ZnO微米线露出，分别在不同的N‑ZnO微米线上制备合金电极，构建N‑ZnO/N‑GaN/N‑ZnO型异质结，构成完整的器件。本发明构建了N/N/N对称结构，器件正反向发光总量相同；器件由N型ZnO和N型GaN组成，器件发光位置为紫外区域，器件开启电压较小；N‑ZnO/N‑GaN/N‑ZnO异质结发光二极管发光中心位于371nm和385nm，紫外发光占比高于80％，器件可在交流电驱动下正常工作。

Description

一种基于N-ZnO/N-GaN/N-ZnO异质结的双向紫外发光二极管 及制备方法
技术领域
本发明涉及半导体光电子器件技术领域，尤其是一种基于N-ZnO/N-GaN/N-ZnO异质结的双向紫外发光二极管及制备方法。
背景技术
氧化锌具有60meV的高激子结合能和3.37eV的宽直接带隙，是一种非常有前途的紫外发光二极管特别是激光二极管的半导体材料。近年来，随着p型掺杂氧化锌的发展，要获得高稳定的p型氧化锌仍有许多困难，这阻碍了氧化锌紫外发光二极管和激光二极管的发展。为了解决这一难题，引入P-GaN来制备氧化锌基发光二极管和激光二极管，但它仍然存在许多问题，如载流子浓度低、方阻阻高。此外，N-ZnO/P-GaN异质结构的电泵浦激发光谱大多以P-GaN中缺陷相关的可见光发射(～420nm)为主，并且N-ZnO中的紫外发射总是受到抑制。从工艺和质量(载流子浓度、载流子迁移率、方阻)来看，N-GaN比P-GaN好，而且制备工艺简单。
传统的照明驱动电路由功率因数校正电路、交流/直流变换器电路和输出恒流电路组成，如果使用双向发光二极管可能只需要两个电路。但现有的双向发光二极管的结构在正向偏压和反向偏压下具有不同的发射波长和不同的光强度。发光二极管的光强和波长是影响频闪的两个主要因素，频闪是一种对眼睛有害的现象。因此，现阶段双向发光二极管在照明和显示领域的应用较少。
发明内容
本发明所要解决的技术问题在于，提供一种基于N-ZnO/N-GaN/N-ZnO异质结的双向紫外发光二极管及制备方法，使用N型ZnO和N型GaN构建对称结构，紫外发光占比高，开启电压小，正反向偏压下发光总量不变，发光波长变化小，可用于制备双向发光二极管应用于照明和显示领域。
为解决上述技术问题，本发明提供一种基于N-ZnO/N-GaN/N-ZnO异质结的双向紫外发光二极管，包括：N-ZnO微米线、N型GaN薄膜、PMMA保护层和合金电极；N型GaN薄膜上平铺两根N-ZnO微米线，旋涂PMMA保护层固定N-ZnO微米线，分别在不同的N-ZnO微米线上制备合金电极。
优选的，N-ZnO微米线的电子浓度为1016-1019/cm3，电子迁移率为5-40cm2/V·s。
优选的，N型GaN薄膜厚度为0.5-10μm，电子浓度为1017-1019/cm3，电子迁移率为20-100cm2/V·s。
优选的，电极均位于N-ZnO微米线上，是Ni/Au合金电极或者Ti/Au合金电极。
相应的，一种基于N-ZnO/N-GaN/N-ZnO异质结的双向紫外发光二极管的制备方法，包括如下步骤：
(1)将纯度均为99.97-99.99％的ZnO粉末和500nm-2000nm的碳粉末按照质量比1:1-1:1.3混合研磨，填入陶瓷舟内；将衬底切成3.2cm×3cm，使用丙酮和无水乙醇混合溶液进行超声清洗，并用氮气吹干，作为生长衬底，放入两端开口的长度20cm、直径8cm的石英管，将清洗好的衬底放置距管口10cm位置处的石英管内；将石英管整体水平推入管式炉中高温反应，并通入150sccm氩气和15sccm氧气；衬底为硅片或者蓝宝石片；
(2)经过反应后，将N-GaN衬底经过丙酮和无水乙醇和去离子水依次超声清洗后，用氮气吹干；
(3)从步骤(1)中的反应物中挑出两根N-ZnO微米线，将两根N-ZnO微米线平铺在N-GaN薄膜上，旋涂PMMA保护层固定N-ZnO微米线，至PMMA保护层漫过N-ZnO微米线，在烘干台上使PMMA保护层凝固，然后利用O2将PMMA保护层刻蚀至N-ZnO微米线露出，分别在不同的N-ZnO微米线上制备合金电极；
(4)将步骤(3)最后生成的N-ZnO/N-GaN/N-ZnO异质结发光二极管进行电学性质测量，并测量电泵浦发光光谱。
优选的，步骤(1)中，高温反应的温度为1000-1100℃，反应时间为90-180分钟。
优选的，步骤(3)中，镀金属的方法为磁控溅射、热蒸发或者电子束蒸镀方法，厚度为20-60nm。
本发明的有益效果为：(1)利用N-ZnO微米线和N型GaN薄膜构建发光二极管，紫外发光占比高，开启电压小；(2)器件为对称性结构，正反向偏压下发光总量不变，发光波长变化小，可应用于照明和显示领域；(3)本发明N-ZnO/N-GaN/N-ZnO异质结发光二极管，发光位置371nm和385nm，紫外发光占比高于80％，器件可在交流电驱动下正常工作。
附图说明
图1为本发明实施例1合成的N型ZnO微米棒刻蚀后的扫描电镜图片。
图2为本发明的N-ZnO/N-GaN/N-ZnO异质结发光二极管的结构示意图。
图3为本发明实施例1的N-ZnO/N-GaN/N-ZnO异质结发光二极管室温下在不同注入交流电压下的电致发光(EL)谱图。
具体实施方式
如图1和图2所示，一种基于N-ZnO/N-GaN/N-ZnO异质结的双向紫外发光二极管，包括：N-ZnO微米线、N型GaN薄膜、PMMA保护层和合金电极；N型GaN薄膜上平铺两根N-ZnO微米线，旋涂PMMA保护层固定N-ZnO微米线，分别在不同的N-ZnO微米线上制备合金电极。
N-ZnO微米线的电子浓度为1016-1019/cm3，电子迁移率为5-40cm2/V·s。N型GaN薄膜厚度为0.5-10μm，电子浓度为1017-1019/cm3，电子迁移率为20-100cm2/V·s。电极均位于N-ZnO微米线上，是Ni/Au合金电极或者Ti/Au合金电极。
相应的，一种基于N-ZnO/N-GaN/N-ZnO异质结的双向紫外发光二极管的制备方法，包括如下步骤：
(1)将纯度均为99.97-99.99％的ZnO粉末和500nm-2000nm的碳粉末按照质量比1:1-1:1.3混合研磨，填入陶瓷舟内；将衬底切成3.2cm×3cm，使用丙酮和无水乙醇混合溶液进行超声清洗，并用氮气吹干，作为生长衬底，放入两端开口的长度20cm、直径8cm的石英管，将清洗好的衬底放置距管口10cm位置处的石英管内；将石英管整体水平推入管式炉中高温反应，并通入150sccm氩气和15sccm氧气；
(2)经过反应后，将N-GaN衬底经过丙酮和无水乙醇和去离子水依次超声清洗后，用氮气吹干；
(3)从步骤(1)中的反应物中挑出两根N-ZnO微米线，将两根N-ZnO微米线平铺在N-GaN薄膜上，旋涂PMMA保护层固定N-ZnO微米线，至PMMA保护层漫过N-ZnO微米线，在烘干台上使PMMA保护层凝固，然后利用O2将PMMA保护层刻蚀至N-ZnO微米线露出，分别在不同的N-ZnO微米线上制备合金电极；
(4)将步骤(3)最后生成的N-ZnO/N-GaN/N-ZnO异质结发光二极管进行电学性质测量，并测量电泵浦发光光谱。
步骤(1)中，高温反应的温度为1000-1100℃，反应时间为90-180分钟。步骤(3)中，镀金属的方法为磁控溅射、热蒸发或者电子束蒸镀方法，厚度为20-60nm。
实施例1：
(1)将纯度均为99.99％的ZnO粉末和500nm-2000nm的碳粉末按照质量比1:1混合研磨，填入陶瓷舟内；将衬底切成3.2cm×3cm，使用丙酮和无水乙醇混合溶液进行超声清洗，并用氮气吹干，作为生长衬底，放入两端开口的长度20cm、直径8cm的石英管，将清洗好的衬底放置距管口10cm位置处的石英管内；将石英管整体水平推入管式炉中高温反应，并通入150sccm氩气和15sccm氧气；
(2)经过反应后，将N-GaN衬底经过丙酮和无水乙醇和去离子水依次超声清洗后，用氮气吹干；
(3)从步骤(1)中的反应物中挑出两根N-ZnO微米线，将两根N-ZnO微米线平铺在N-GaN薄膜上，旋涂PMMA保护层固定N-ZnO微米线，至PMMA保护层漫过N-ZnO微米线，在烘干台上使PMMA保护层凝固，然后利用O2将PMMA保护层刻蚀至N-ZnO微米线露出，分别在不同的N-ZnO微米线上制备合金电极；
(4)将步骤(3)中最后生成的N-ZnO/N-GaN/N-ZnO异质结发光二极管进行电学性质测量，并测量电泵浦发光光谱，在100Hz不同电压下，发光位置371nm和385nm，紫外光占比85％。
步骤(1)中，高温反应的温度为1000-1100℃,所述的反应时间为120分钟。步骤(3)中，镀金属的方法为磁控溅射，热蒸发或者电子束蒸镀方法，厚度为45nm。
图3为实施例1在不同交流电压驱动下的电泵浦发光图谱，其发光中心位于371nm和385nm，发光位置不随着电压的升高而改变。

Claims (6)

1.一种基于N-ZnO/N-GaN/N-ZnO异质结的双向紫外发光二极管，其特征在于，包括：N-ZnO微米线、N型GaN薄膜、PMMA保护层和合金电极；N型GaN薄膜上平铺两根N-ZnO微米线，旋涂PMMA保护层固定N-ZnO微米线，分别在不同的N-ZnO微米线上制备合金电极；N-ZnO微米线的电子浓度为1016-1 019/cm3，电子迁移率为5-40cm2/V·s。
2.如权利要求1所述的基于N-ZnO/N-GaN/N-ZnO异质结的双向紫外发光二极管，其特征在于，N型GaN薄膜厚度为0.5-10μm，电子浓度为1017-1019/cm3，电子迁移率为20-100cm2/V·s。
3.如权利要求1所述的基于N-ZnO/N-GaN/N-ZnO异质结的双向紫外发光二极管，其特征在于，电极均位于N-ZnO微米线上，是Ni/Au合金电极或者Ti/Au合金电极。
4.一种基于N-ZnO/N-GaN/N-ZnO异质结的双向紫外发光二极管的制备方法，其特征在于，包括如下步骤：
(1)将纯度均为99.97-99.99％的ZnO粉末和500nm-2000nm的碳粉末按照质量比1:1-1:1.3混合研磨，填入陶瓷舟内；将衬底切成3.2cm×3cm，使用丙酮和无水乙醇混合溶液进行超声清洗，并用氮气吹干，作为生长衬底，放入两端开口的长度20cm、直径8cm的石英管，将清洗好的衬底放置距管口10cm位置处的石英管内；将石英管整体水平推入管式炉中高温反应，并通入150sccm氩气和15sccm氧气；衬底为硅片或者蓝宝石片；
(2)经过反应后，将N-GaN衬底经过丙酮和无水乙醇和去离子水依次超声清洗后，用氮气吹干；
(3)从步骤(1)中的反应物中挑出两根N-ZnO微米线，将两根N-ZnO微米线平铺在N-GaN薄膜上，旋涂PMMA保护层固定N-ZnO微米线，至PMMA保护层漫过N-ZnO微米线，在烘干台上使PMMA保护层凝固，然后利用O2将PMMA保护层刻蚀至N-ZnO微米线露出，分别在不同的N-ZnO微米线上制备合金电极；
(4)将步骤(3)最后生成的N-ZnO/N-GaN/N-ZnO异质结发光二极管进行电学性质测量，并测量电泵浦发光光谱。
5.如权利要求4所述的基于N-ZnO/N-GaN/N-ZnO异质结的双向紫外发光二极管的制备方法，其特征在于，步骤(1)中，高温反应的温度为1000-1100℃，反应时间为90-180分钟。
6.如权利要求4所述的基于N-ZnO/N-GaN/N-ZnO异质结的双向紫外发光二极管的制备方法，其特征在于，步骤(3)中，镀金属的方法为磁控溅射、热蒸发或者电子束蒸镀方法，厚度为20-60nm。
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