CN110117817B - 一种塑性半导体材料以及其制备方法 - Google Patents
一种塑性半导体材料以及其制备方法 Download PDFInfo
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- CN110117817B CN110117817B CN201810117079.4A CN201810117079A CN110117817B CN 110117817 B CN110117817 B CN 110117817B CN 201810117079 A CN201810117079 A CN 201810117079A CN 110117817 B CN110117817 B CN 110117817B
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Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810117079.4A CN110117817B (zh) | 2018-02-06 | 2018-02-06 | 一种塑性半导体材料以及其制备方法 |
| JP2020540435A JP7028985B2 (ja) | 2018-02-06 | 2018-02-12 | 可塑性半導体材料及びその製造方法 |
| PCT/CN2018/076460 WO2019153335A1 (zh) | 2018-02-06 | 2018-02-12 | 一种塑性半导体材料以及其制备方法 |
| US16/967,119 US11136692B2 (en) | 2018-02-06 | 2018-02-12 | Plastic semiconductor material and preparation method thereof |
| EP18905300.2A EP3751024A4 (en) | 2018-02-06 | 2018-02-12 | SEMICONDUCTOR PLASTIC MATERIAL AND ITS PREPARATION PROCESS |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810117079.4A CN110117817B (zh) | 2018-02-06 | 2018-02-06 | 一种塑性半导体材料以及其制备方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110117817A CN110117817A (zh) | 2019-08-13 |
| CN110117817B true CN110117817B (zh) | 2021-01-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810117079.4A Active CN110117817B (zh) | 2018-02-06 | 2018-02-06 | 一种塑性半导体材料以及其制备方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11136692B2 (enExample) |
| EP (1) | EP3751024A4 (enExample) |
| JP (1) | JP7028985B2 (enExample) |
| CN (1) | CN110117817B (enExample) |
| WO (1) | WO2019153335A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12035630B2 (en) | 2019-08-30 | 2024-07-09 | Sumitomo Electric Industries, Ltd. | Thermoelectric conversion material, thermoelectric conversion element, thermoelectric conversion module, and optical sensor |
| CN118660610A (zh) * | 2020-11-16 | 2024-09-17 | 昆明理工大学 | 一种硫化铜基塑性热电复合材料的制备方法 |
| CN119372786B (zh) * | 2024-12-30 | 2025-09-30 | 乌镇实验室 | 一种CuAgSe基热电半导体晶体及其制备方法 |
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Also Published As
| Publication number | Publication date |
|---|---|
| US20200362471A1 (en) | 2020-11-19 |
| CN110117817A (zh) | 2019-08-13 |
| US11136692B2 (en) | 2021-10-05 |
| WO2019153335A1 (zh) | 2019-08-15 |
| EP3751024A4 (en) | 2021-11-10 |
| EP3751024A1 (en) | 2020-12-16 |
| JP7028985B2 (ja) | 2022-03-02 |
| JP2021511279A (ja) | 2021-05-06 |
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