CN110117817B - 一种塑性半导体材料以及其制备方法 - Google Patents

一种塑性半导体材料以及其制备方法 Download PDF

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CN110117817B
CN110117817B CN201810117079.4A CN201810117079A CN110117817B CN 110117817 B CN110117817 B CN 110117817B CN 201810117079 A CN201810117079 A CN 201810117079A CN 110117817 B CN110117817 B CN 110117817B
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semiconductor material
semiconductor device
sintering
flexible
flexible semiconductor
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CN110117817A (zh
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史迅
刘睿恒
郝峰
王拓
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Shanghai Institute of Ceramics
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Shanghai Institute of Ceramics
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Priority to CN201810117079.4A priority Critical patent/CN110117817B/zh
Priority to US16/967,119 priority patent/US11136692B2/en
Priority to JP2020540435A priority patent/JP7028985B2/ja
Priority to EP18905300.2A priority patent/EP3751024A4/en
Priority to PCT/CN2018/076460 priority patent/WO2019153335A1/zh
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CN201810117079.4A 2018-02-06 2018-02-06 一种塑性半导体材料以及其制备方法 Active CN110117817B (zh)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN201810117079.4A CN110117817B (zh) 2018-02-06 2018-02-06 一种塑性半导体材料以及其制备方法
US16/967,119 US11136692B2 (en) 2018-02-06 2018-02-12 Plastic semiconductor material and preparation method thereof
JP2020540435A JP7028985B2 (ja) 2018-02-06 2018-02-12 可塑性半導体材料及びその製造方法
EP18905300.2A EP3751024A4 (en) 2018-02-06 2018-02-12 PLASTIC SEMICONDUCTOR MATERIAL AND METHOD FOR ITS MANUFACTURING
PCT/CN2018/076460 WO2019153335A1 (zh) 2018-02-06 2018-02-12 一种塑性半导体材料以及其制备方法

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014041178A3 (en) * 2012-09-15 2014-05-08 Novozymes A/S Enzymatic oxidation of sulfide minerals
CN105293561A (zh) * 2015-11-05 2016-02-03 南昌航空大学 一种有机熔盐法制备针状Ag2S微米颗粒的方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5424677B2 (enExample) * 1972-08-10 1979-08-22
FR2658297B1 (fr) * 1990-02-12 1993-04-30 Kodak Pathe Membrane d'ag2s pour le dosage des ions halogenures pendant la preparation des emulsions photographiques.
JP4119950B2 (ja) * 2000-09-01 2008-07-16 独立行政法人科学技術振興機構 コンダクタンスの制御が可能な電子素子
CA2491144C (en) * 2003-12-30 2013-06-11 National Research Council Of Canada Method of synthesizing colloidal nanocrystals
US20050238546A1 (en) 2004-04-23 2005-10-27 Holmes Keith J Canister for an oxygen generation cell
CN101786650B (zh) * 2010-02-08 2011-11-02 许昌学院 一种低温下原位合成片状硫化银纳米晶光电薄膜的化学方法
KR101631858B1 (ko) * 2014-06-24 2016-06-20 한국전기연구원 침입형 도핑재 첨가에 의해 복합결정구조가 형성된 Ｔｅ계 열전재료
CN105544971A (zh) 2015-12-30 2016-05-04 青建集团股份公司 一种后浇带早拆模板体系
CN105696080A (zh) * 2016-01-29 2016-06-22 浙江大学 一种四元硫属化合物半导体材料及其制备方法和用途
CN105543971B (zh) * 2016-02-04 2017-11-21 中国科学院理化技术研究所 一种AgZnPS4非线性光学晶体及其制备方法和非线性光学器件
CN107235477A (zh) * 2017-07-04 2017-10-10 中国科学院上海硅酸盐研究所 一种n型高性能硫银锗矿热电材料及其制备方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014041178A3 (en) * 2012-09-15 2014-05-08 Novozymes A/S Enzymatic oxidation of sulfide minerals
CN105293561A (zh) * 2015-11-05 2016-02-03 南昌航空大学 一种有机熔盐法制备针状Ag2S微米颗粒的方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Ag2S高温相变的初步研究;龚国洪等;《矿物学报》;19930331;第13卷;摘要，第87页第1行-第89页第5行，第91页第1-8行 *
Room-temperature ductile inorganic semiconductor;Xun Shi et al.;《Nature Materials》;20180531;第17卷;第421页左栏第36行-第422页右栏第12行，第426页方法部分，图2 *

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