CN110098171A - A kind of novel DBC plate and preparation method - Google Patents

A kind of novel DBC plate and preparation method Download PDF

Info

Publication number
CN110098171A
CN110098171A CN201910417083.7A CN201910417083A CN110098171A CN 110098171 A CN110098171 A CN 110098171A CN 201910417083 A CN201910417083 A CN 201910417083A CN 110098171 A CN110098171 A CN 110098171A
Authority
CN
China
Prior art keywords
dbc
copper
layer
layers
dbc plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910417083.7A
Other languages
Chinese (zh)
Inventor
王学华
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Yiwei Xinneng Technology Co Ltd
Original Assignee
Beijing Yiwei Xinneng Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Yiwei Xinneng Technology Co Ltd filed Critical Beijing Yiwei Xinneng Technology Co Ltd
Priority to CN201910417083.7A priority Critical patent/CN110098171A/en
Publication of CN110098171A publication Critical patent/CN110098171A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H01L21/4882—Assembly of heatsink parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3672—Foil-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737—Organic materials with or without a thermoconductive filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49894—Materials of the insulating layers or coatings

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The present invention provides a kind of novel DBC plate and preparation methods；The DBC plate includes surface circuit, electrical isolations layer, surface layer layers of copper module, intermediate resin material conducts heat insulating layer and bottom layers of copper；The surface circuit is located at the upper surface of surface layer layers of copper module, is formed by surface layer copper through laser-induced thermal etching；The electrical isolations layer is located between the layers of copper module of surface layer, is used for electrical isolation；The surface layer layers of copper module is fixed in the upper surface of intermediate resin material conducts heat insulating layer；The intermediate resin material conducts heat insulating layer is fixed in the upper surface of bottom layers of copper；The hardened structure of DBC of the invention is used comprising Cu layers thick, and the structure of ultrathin insulating material layer designs, and can greatly improve the radiating efficiency of power module, improves the thermal capacitance ability of power module, reduces power device package volume.

Description

A kind of novel DBC plate and preparation method
Technical field
The present invention relates to power device package field more particularly to a kind of novel DBC plate and preparation methods.
Background technique
DBC plate is also named direct copper-clad plate, is the indispensable component part of field of power electronics power module package.DBC is copper (Cu)-ceramic material-copper three-decker is constituted, and it is big crucial that circuit layout, thermally conductive, insulation etc. three is played inside power module Function.The middle layer ceramic material of DBC generally uses Al2O3, the high scleroid material of a variety of thermal conductivitys such as AlN.Generally Using sintering, the technical process preparation such as plating, then the size by being laser-cut into needs.
In power module, u layers of surface C of DBC are directly connect with chip, have not only played the role of constituting circuit, but also play The effect directly radiated.So for u layers of the surface C of DBC, there are two require: the thicker 1. thickness the better, can be in the big electricity of chip Bigger electric current is connected when flowing work；2. layers of copper is thicker, thermal capacitance is bigger, can absorb in time what chip generated under extreme conditions Moment high heat, protection power device are not damaged.Thermally conductive aspect, most general Al2O3 ceramics in power module, in certain spies It very applies and uses expensive AlN ceramic in power module, but two kinds of ceramic materials cannot all reach the thermally conductive grade of metal Not, the thermal conductivity of general purpose aluminum oxide (Al2O3) ceramics and the thermal conductivity of copper differ greatly.For the ceramic material thickness of DBC plate Requirement be exactly under the premise of meeting the class of insulation, material it is more thin be conducive to power device heat dissipation.
However, requirements above cannot be taken into account at all.The ceramic material of DBC is held in DBC three-decker simultaneously as substrate The different powerful stress of the coefficient of thermal expansion of different materials is carried on a shoulder pole, the thickening of Cu material can make the stress of DBC ceramic material receiving bright It is aobvious to increase.The ceramic material in DBC plate preparation process often faces fragmentation risk because harder crisp；In power device During work, because to bear the On The Cycle Working Process of continuous high temperature low temperature, the difference of coefficient of thermal expansion also results in pottery Ceramic material fragmentation, so as to cause power module failure.So directly resulting in status: the thickness range of the Cu layer of DBC exists 0.1mm-0.45mm；The thickness of ceramic layer is generally between 0.3mm-1mm.The thickness of Cu cannot thicken, the thickness of ceramic layer It cannot be thin again.
Summary of the invention
In place of solving above-mentioned the deficiencies in the prior art, the purpose of the present invention is to provide a kind of novel DBC plate and systems Preparation Method, to meet the development trend of DBC plate in electronic circuit.
To achieve the goals above, the present invention provides a kind of novel DBC plate, the DBC plate includes surface circuit, electrical Separation layer, surface layer layers of copper module, intermediate resin material conducts heat insulating layer and bottom layers of copper；The surface circuit is located at surface layer layers of copper The upper surface of module is formed by surface layer copper through laser-induced thermal etching；The electrical isolations layer is located between the layers of copper module of surface layer, for electricity Air bound from；The surface layer layers of copper module is fixed in the upper surface of intermediate resin material conducts heat insulating layer；The intermediate resin material Thermally conductive insulating layer is fixed in the upper surface of bottom layers of copper.
Preferably, the electrical isolations layer can change size by machining.
Preferably, the surface layer layers of copper module is thick copper layer, thickness range 0.3mm-5mm.
Preferably, the intermediate resin material conducts heat insulating layer is made of silicone resin material.
Preferably, the bottom layers of copper is whole layers of copper, and thickness range is 0.1mm-1mm or 1mm-2mm.
The present invention provides a kind of preparation methods using the DBC plate, the described method comprises the following steps:
1) base's copper sheet is placed, small air hole is set in base's copper sheet, is arranged in the position for not influencing circuit layout；
2) silicone resin material is brushed or pasted on base's copper sheet；
3) top layer copper sheet is placed in silicone resin material, and in top layer copper sheet, small air hole is set；
4) pressure is applied on top layer copper sheet by press device, keeps the trilaminate material of DBC plate well-bonded, side by side outlet Body；It is simultaneously that the thickness of silicone resin layer is ironed to specified thickness, form preforming DBC plate；
5) preforming DBC plate is placed on the solidification of heating environment high temperature, high temperature oven, welding can be used in heating environment The plurality of devices such as furnace are realized；Solidification temperature is about 70 DEG C -100 DEG C, and solidification process can keep pressurized state to carry out；
6) DBC motherboard shapes, and DBC mother matrix includes the DBC plate of one or more identical functions, final output one or more DBC finished product；
7) DBC thick copper layer etching and processing forms circuit layout, by the way of chemical etching or laser ablation；
8) DBC mother matrix is cut, and forms one or more independent DBC products, is used for power module package.
The present invention also provides the preparation methods that another uses the DBC plate, the described method comprises the following steps:
1) base's copper sheet is placed, small air hole is set；
2) silicone resin material is brushed or pasted on base's copper sheet；
3) according to the design of module, certain thickness layers of copper is processed into the different copper piece of different groups, using certainly Dynamicization equipment mounts copper piece to silicone resin layer；
4) pressure is applied on top layer copper sheet by press device, keeps the trilaminate material of DBC plate well-bonded, side by side outlet Body, at the same the thickness of silicone resin layer is ironed to specified thickness, form preforming DBC plate；
5) preforming DBC plate is placed on the solidification of heating environment high temperature, high temperature oven, welding can be used in heating environment The plurality of devices such as furnace realize that solidification temperature is about 70 DEG C -100 DEG C, and solidification process can keep pressurized state to carry out；
6) DBC motherboard shapes, and DBC mother matrix includes the DBC plate of one or more identical functions, finally can be one piece or more of output Block DBC finished product；
7) DBC mother matrix is cut, and forms one or more independent DBC products, is used for power module package.
Compared with the existing technology, the beneficial effects of the present invention are embodied in:
(1) the existing surface layer DBC copper thickness is limited, and the present invention uses surface thickness copper technology, thickness range 0.3mm-5mm, Breach the limitation of prior art surface copper layer thickness.
(2) surface DBC thick copper layer is connected directly with chip, can quickly be absorbed chip and be generated heat, heat dissipation effect is significantly Reinforce.
(3) surface DBC thick copper layer thermal capacity greatly improves, and not only heat transfer efficiency is greatly reinforced, while can be in short circuit, mistake Instantaneous energy spike is absorbed under the extreme operating conditions such as stream, protects chip and power module from failure.
(4) surface DBC thick copper layer, copper foil sectional area improve decades of times, and resistance equal proportion reduces, and can pass through bigger electricity Stream realizes the more high-power output of power module.
(5) the intermediate thermal conductivity insulating layer of DBC uses silicone resin material, while having both high heat conductance, high-insulativity, bullet Property, thermal stability；Not only surmount existing alumina ceramic material, good caking property and bullet easily in heat conductive insulating performance Property also breaches the bottleneck of the prior art, is not required to consider the stress mismatch problem of existing DBC three-decker.
(6) DBC plate of the invention can greatly reduce the design volume of power module；Reduce system cost.
(7) DBC plate applicability of the invention is very strong, can be applicable in various forms of power module packages；And process work Skill is simple, can be produced by power device package factory rapid batch.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of novel DBC plate of the invention；
Fig. 2 is a kind of preparation flow figure of novel DBC plate of the invention；
Fig. 3 is a kind of another preparation flow figure of novel DBC plate of the invention.
Specific embodiment
It is attached now in conjunction with appended preferred embodiment in order to further appreciate that structure of the invention, feature and other purposes With attached drawing, detailed description are as follows, this attached drawing embodiment described is only used to illustrate the technical scheme of the present invention, and non-limiting Invention.
Firstly, as shown in Figure 1, Fig. 1 is a kind of structural schematic diagram of novel DBC plate of the invention；The DBC plate mainly divides For surface layer layers of copper, intermediate resin material conducts heat insulating layer, bottom layers of copper.This three layer main bodies structure has the feature that
1) the surface layer layers of copper is thick copper, with a thickness of 0.5mm-5mm, the 0.3mm left and right thickness surface layer copper foil of more existing DBC Thickness can be improved 10 times or so.Surface layer copper thickness greatly improves, and the thermal capacitance of surface layers of copper is significantly increased, power module The heat generated when interior chip operation is directly quickly absorbed by surface layer thickness copper, and power module is enabled to export bigger power. The thermal capacitance of surface layer thickness copper, which greatly improves, simultaneously also directly enhances the reliability of power module, so that power device is extreme in short-term The heat generated under operating condition (such as short circuit, overcurrent) is conducted in time and avoids the consequence burnt.
Surface thick copper layer can also be via various technique rows at the part being mutually isolated, inside power module simultaneously The formation of electrical isolation and circuit.The surface DBC thick copper layer can form surface circuit via chemistry or the method for laser-induced thermal etching；It can also To be formed different character blocks (be similar to picture arrangement game) via machining, then formed via techniques such as automation surface mounts Surface circuit.
2) intermediate thermal conductivity insulating layer of the present invention is same as the prior art bigger difference, and this patent proposes that intermediate layer material is adopted With the silicone resin material (also referred to as silastic material) of high heat conductive insulating characteristic.Above-mentioned resin material is extraordinary except having Thermal conductivity, insulating properties, while but also with good caking property, elasticity, heat-resisting quantity.These characteristics become organic siliconresin The best selection of DBC intermediate layer material.
The dielectric constant of silicone resin material reaches 60-80kV/mm, the alumina material used than existing DBC (20kV/mm) improves 3-4 times.With extraordinary insulation characterisitic.The thickness insulation pressure resistance of 6mil (0.15mm) is greater than 4kV can satisfy the resistance to pressure request of insulation of 6500V or more power module.Power module below for universal 1200V, 1- 3mil (25.4um-76.2um) can meet the resistance to pressure request of insulation.Than existing alumina ceramic material (600um-1200um) Thickness can reduce 10-20 times or so.
The thermal conductivity of silicone resin material is 1-3W/ (mK), and there are gaps than alumina ceramic material for this performance 20-30W/(m·K).But the thickness of silicone resin material can be realized than alumina ceramic material and substantially reduce.It is comprehensive next It says and uses thinner silicone resin material, can be realized heating conduction more preferably than alumina material.
Silicone resin material has elasticity and high temperature resistance well, extraordinary can adapt in power device work The expansion and contraction of upper and lower level copper metal material when making.That is silicone resin material does the DBC plate tool of thermally conductive insulating layer There is extraordinary temperature Cycle.
The phase transition function of silicone resin material is allowed to be highly suitable as jointing material application, but also in this patent The preparation flow of DBC plate is very simple.Convenient for producing in enormous quantities.
3) the bottom copper foil in the present invention is whole layers of copper, can weld and encapsulate with the copper base of power module, can also be direct Exposed heat-radiating substrate as power module finished product.The lower thickness of 0.1-1mm can be used in copper layer thickness, to play reduction material The purpose of cost can also use the thick copper sheet of 1mm-3mm, enhance the strong degree of structure of product.
Further, Fig. 2 is please referred to, Fig. 2 is a kind of preparation flow figure of novel DBC plate of the invention；The method master Want the following steps are included:
1) base's copper sheet is placed, small air hole is set in base's copper sheet, is arranged in the position for not influencing circuit layout；
2) silicone resin material is brushed or pasted on base's copper sheet；
3) top layer copper sheet is placed in silicone resin material, and in top layer copper sheet, small air hole is set；
4) pressure is applied on top layer copper sheet by press device, keeps the trilaminate material of DBC plate well-bonded, side by side outlet Body；It is simultaneously that the thickness of silicone resin layer is ironed to specified thickness, form preforming DBC plate；
5) preforming DBC plate is placed on the solidification of heating environment high temperature, high temperature oven, welding can be used in heating environment The plurality of devices such as furnace are realized；Solidification temperature is about 70 DEG C -100 DEG C, and solidification process can keep pressurized state to carry out；
6) DBC motherboard shapes, and DBC mother matrix includes the DBC plate of one or more identical functions, final output one or more DBC finished product；
7) DBC thick copper layer etching and processing forms circuit layout, by the way of chemical etching or laser ablation；
8) DBC mother matrix is cut, and forms one or more independent DBC products, is used for power module package.
In addition, as shown in figure 3, Fig. 3 is a kind of another preparation flow figure of novel DBC plate of the invention；The side Method mainly comprises the steps that
1) base's copper sheet is placed, small air hole is set；
2) silicone resin material is brushed or pasted on base's copper sheet；
3) according to the design of module, certain thickness layers of copper is processed into the different copper piece of different groups, using certainly Dynamicization equipment mounts copper piece to silicone resin layer；
4) pressure is applied on top layer copper sheet by press device, keeps the trilaminate material of DBC plate well-bonded, side by side outlet Body, at the same the thickness of silicone resin layer is ironed to specified thickness, form preforming DBC plate；
5) preforming DBC plate is placed on the solidification of heating environment high temperature, high temperature oven, welding can be used in heating environment The plurality of devices such as furnace realize that solidification temperature is about 70 DEG C -100 DEG C, and solidification process can keep pressurized state to carry out；
6) DBC motherboard shapes, and DBC mother matrix includes the DBC plate of one or more identical functions, finally can be one piece or more of output Block DBC finished product；
7) DBC mother matrix is cut, and forms one or more independent DBC products, is used for power module package.
Finally, a kind of configurable power-supply system and control method of the invention, specific technical characterstic are as follows:
(1) the existing surface layer DBC copper thickness is limited, and the present invention uses surface thickness copper technology, thickness range 0.3mm-5mm, Breach the limitation of prior art surface copper layer thickness.
(2) surface DBC thick copper layer is connected directly with chip, can quickly be absorbed chip and be generated heat, heat dissipation effect is significantly Reinforce.
(3) surface DBC thick copper layer thermal capacity greatly improves, and not only heat transfer efficiency is greatly reinforced, while can be in short circuit, mistake Instantaneous energy spike is absorbed under the extreme operating conditions such as stream, protects chip and power module from failure.
(4) surface DBC thick copper layer, copper foil sectional area improve decades of times, and resistance equal proportion reduces, and can pass through bigger electricity Stream realizes the more high-power output of power module.
(5) the intermediate thermal conductivity insulating layer of DBC uses silicone resin material, while having both high heat conductance, high-insulativity, bullet Property, thermal stability；Not only surmount existing alumina ceramic material, good caking property and bullet easily in heat conductive insulating performance Property also breaches the bottleneck of the prior art, is not required to consider the stress mismatch problem of existing DBC three-decker.
(6) DBC plate of the invention can greatly reduce the design volume of power module；Reduce system cost.
(7) DBC plate applicability of the invention is very strong, can be applicable in various forms of power module packages；And process work Skill is simple, can be produced by power device package factory rapid batch.
It is to be understood that foregoing invention content and specific embodiment are intended to prove technical solution provided by the present invention Practical application should not be construed as limiting the scope of the present invention.Those skilled in the art are in spirit and principles of the present invention It is interior, when can various modifications may be made, equivalent replacement or improvement.Protection scope of the present invention is subject to the appended claims.

Claims (7)

1. a kind of novel DBC plate, which is characterized in that the DBC plate includes surface circuit (1), electrical isolations layer (2), surface layer copper Layer module (3), intermediate resin material conducts heat insulating layer (4) and bottom layers of copper (5)；Wherein, surface circuit (1) is located at surface layer layers of copper The upper surface of module (3), is formed by laser-induced thermal etching；Electrical isolations layer (2) is located between surface layer layers of copper module (3), for electrical Isolation；Surface layer layers of copper module (3) is fixed in the upper surface of intermediate resin material conducts heat insulating layer (4)；Intermediate resin material conducts heat Insulating layer (4) is fixed in the upper surface of bottom layers of copper (5).
2. DBC plate according to claim 1, which is characterized in that the electrical isolations layer (2) can change ruler by machining It is very little.
3. DBC plate according to claim 1, which is characterized in that the surface layer layers of copper module (3) is thick copper layer, thickness model It encloses for 0.3mm-5mm.
4. DBC plate according to claim 1, which is characterized in that the intermediate resin material conducts heat insulating layer (4) is by organic Silicone material is constituted.
5. DBC plate according to claim 1, which is characterized in that the bottom layers of copper (5) is whole layers of copper, thickness range For 0.1mm-1mm or 1mm-2mm.
6. a kind of preparation method of DBC plate according to claim 1, the preparation method include the following steps:
1) base's copper sheet is placed, small air hole is set in base's copper sheet, is arranged in the position for not influencing circuit layout；
2) silicone resin material is brushed or pasted on base's copper sheet；
3) top layer copper sheet is placed in silicone resin material, and in top layer copper sheet, small air hole is set；
4) pressure is applied on top layer copper sheet by press device, keeps the trilaminate material of DBC plate well-bonded, and gas is discharged； It is simultaneously that the thickness of silicone resin layer is ironed to specified thickness, form preforming DBC plate；
5) preforming DBC plate is placed on the solidification of heating environment high temperature, high temperature oven, soldering furnace etc. can be used in heating environment Plurality of devices is realized；Solidification temperature is about 70 DEG C -100 DEG C, and solidification process can keep pressurized state to carry out；
6) DBC motherboard shapes, and DBC mother matrix includes the DBC plate of one or more identical functions, one or more DBC of final output Finished product；
7) DBC thick copper layer etching and processing forms circuit layout, by the way of chemical etching or laser ablation；
8) DBC mother matrix is cut, and forms one or more independent DBC products, is used for power module package.
7. a kind of preparation method of DBC plate according to claim 1, the preparation method include the following steps:
1) base's copper sheet is placed, small air hole is set；
2) silicone resin material is brushed or pasted on base's copper sheet；
3) according to the design of module, certain thickness layers of copper is processed into the different copper piece of different groups, using automation Equipment mounts copper piece to silicone resin layer；
4) pressure is applied on top layer copper sheet by press device, keeps the trilaminate material of DBC plate well-bonded, and gas is discharged, It is simultaneously that the thickness of silicone resin layer is ironed to specified thickness, form preforming DBC plate；
5) preforming DBC plate is placed on the solidification of heating environment high temperature, high temperature oven, soldering furnace etc. can be used in heating environment Plurality of devices realizes that solidification temperature is about 70 DEG C -100 DEG C, and solidification process can keep pressurized state to carry out；
6) DBC motherboard shapes, and DBC mother matrix includes the DBC plate of one or more identical functions, finally can output one or more DBC finished product；
7) DBC mother matrix is cut, and forms one or more independent DBC products, is used for power module package.
CN201910417083.7A 2019-05-20 2019-05-20 A kind of novel DBC plate and preparation method Pending CN110098171A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910417083.7A CN110098171A (en) 2019-05-20 2019-05-20 A kind of novel DBC plate and preparation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910417083.7A CN110098171A (en) 2019-05-20 2019-05-20 A kind of novel DBC plate and preparation method

Publications (1)

Publication Number Publication Date
CN110098171A true CN110098171A (en) 2019-08-06

Family

ID=67448519

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910417083.7A Pending CN110098171A (en) 2019-05-20 2019-05-20 A kind of novel DBC plate and preparation method

Country Status (1)

Country Link
CN (1) CN110098171A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1312586A (en) * 2000-03-06 2001-09-12 夏普公司 Resin moulding-die and method for making semiconductor device using same
CN205071434U (en) * 2015-09-23 2016-03-02 江西品升电子有限公司 Carbon fiber combined material copper -clad plate
JP2017028130A (en) * 2015-07-23 2017-02-02 住友ベークライト株式会社 Substrate for power module, circuit board for power module, and power module
CN207984216U (en) * 2017-12-19 2018-10-19 江西省航宇新材料股份有限公司 A kind of high-tenacity structure copper-clad plate
CN210040187U (en) * 2019-05-20 2020-02-07 北京易威芯能科技有限公司 Novel DBC board

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1312586A (en) * 2000-03-06 2001-09-12 夏普公司 Resin moulding-die and method for making semiconductor device using same
JP2017028130A (en) * 2015-07-23 2017-02-02 住友ベークライト株式会社 Substrate for power module, circuit board for power module, and power module
CN205071434U (en) * 2015-09-23 2016-03-02 江西品升电子有限公司 Carbon fiber combined material copper -clad plate
CN207984216U (en) * 2017-12-19 2018-10-19 江西省航宇新材料股份有限公司 A kind of high-tenacity structure copper-clad plate
CN210040187U (en) * 2019-05-20 2020-02-07 北京易威芯能科技有限公司 Novel DBC board

Similar Documents

Publication Publication Date Title
CN100570866C (en) Terminal block
US11107744B2 (en) Insulated gate bipolar transistor module and manufacturing method thereof
CN106031315B (en) Circuit substrate and circuit substrate component
US20190198423A1 (en) Device module embedded with switch chip and manufacturing method thereof
CN102740604A (en) Method for manufacturing insulating metal base plate of electronic circuit
CN211208432U (en) Intelligent power module substrate, intelligent functional module and electronic equipment
CN110071206B (en) COB aluminum-based packaging plate and preparation process thereof
CN107910324A (en) A kind of modularized encapsulation method based on the two-sided interconnecting silicon carbide MOS device of nano mattisolda
JP2008124416A (en) Ceramics circuit board and semiconductor module using this
CN110268520A (en) Method for integrated power chip and the busbar for forming radiator
CN108417501A (en) Power module and preparation method thereof
CN104135816B (en) Aluminum-based copper-clad plate and preparation method thereof, circuit electronic circuit board
CN216563091U (en) Double-sided heat dissipation power module
CN210040187U (en) Novel DBC board
CN110098171A (en) A kind of novel DBC plate and preparation method
CN202816924U (en) Power device packaging substrate
CN108640701B (en) A kind of silicon nitride ceramics radiating fin copper-clad plate and preparation method thereof
CN103000590A (en) Power module without bottom plate
WO2021233241A1 (en) Power conversion apparatus
TWM566403U (en) Heat dissipation structure of IGBT module
Yang et al. Pcb embedded chip-on-chip packaging of a 48 kw sic mosfet dc-ac module with double-side cooling design
CN207884962U (en) A kind of high heat conduction printed circuit board
CN207283915U (en) A kind of wiring board of perfect heat-dissipating
CN201248194Y (en) Ceramic-based copper foil covered board
CN113782504B (en) Simplified packaging structure of power module of integrated radiator and manufacturing method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination