CN1100344C - 半导体器件的制造方法 - Google Patents
半导体器件的制造方法 Download PDFInfo
- Publication number
- CN1100344C CN1100344C CN96198419A CN96198419A CN1100344C CN 1100344 C CN1100344 C CN 1100344C CN 96198419 A CN96198419 A CN 96198419A CN 96198419 A CN96198419 A CN 96198419A CN 1100344 C CN1100344 C CN 1100344C
- Authority
- CN
- China
- Prior art keywords
- layer
- emitter
- amorphous silicon
- amorphous
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims abstract description 67
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000005530 etching Methods 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000002425 crystallisation Methods 0.000 claims abstract description 10
- 230000008025 crystallization Effects 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 48
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 22
- 238000005516 engineering process Methods 0.000 claims description 14
- 229920005591 polysilicon Polymers 0.000 claims description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 10
- 239000002019 doping agent Substances 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 6
- 238000001465 metallisation Methods 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 3
- 239000012772 electrical insulation material Substances 0.000 claims description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 2
- 238000007645 offset printing Methods 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000002950 deficient Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005243 fluidization Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229940090044 injection Drugs 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000000752 ionisation method Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Bipolar Transistors (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9504150A SE508635C2 (sv) | 1995-11-20 | 1995-11-20 | Förfarande för selektiv etsning vid tillverkning av en bipolär transistor med självregistrerande bas-emitterstruktur |
SE95041505 | 1995-11-20 | ||
SE9504150 | 1995-11-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1202980A CN1202980A (zh) | 1998-12-23 |
CN1100344C true CN1100344C (zh) | 2003-01-29 |
Family
ID=20400303
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN96198419A Expired - Lifetime CN1100344C (zh) | 1995-11-20 | 1996-11-20 | 半导体器件的制造方法 |
Country Status (11)
Country | Link |
---|---|
EP (1) | EP0956586B1 (zh) |
JP (1) | JP2000501234A (zh) |
KR (1) | KR100495284B1 (zh) |
CN (1) | CN1100344C (zh) |
AU (1) | AU7715296A (zh) |
CA (1) | CA2237887A1 (zh) |
DE (1) | DE69635867T2 (zh) |
ES (1) | ES2258782T3 (zh) |
SE (1) | SE508635C2 (zh) |
TW (1) | TW364167B (zh) |
WO (1) | WO1997019465A1 (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010021740A (ko) | 1997-07-11 | 2001-03-15 | 에를링 블로메, 타게 뢰브그렌 | 무선 주파수에서 사용되는 집적 회로 소자를 제조하는 방법 |
SE517833C2 (sv) * | 1999-11-26 | 2002-07-23 | Ericsson Telefon Ab L M | Metod vid tillverkning av en bipolär kiseltransistor för att bilda basområden och öppna ett emitterfönster samt bipolär kiseltransistor tillverkad enligt metoden |
KR100407683B1 (ko) * | 2000-06-27 | 2003-12-01 | 주식회사 하이닉스반도체 | 반도체 소자의 콘택 플러그 형성 방법 |
EP1415330B1 (en) | 2001-07-18 | 2012-02-01 | Infineon Technologies AG | Selective base etching |
EP1521306A2 (en) * | 2003-09-30 | 2005-04-06 | Agere Systems, Inc. | Bipolar transistor and method of manufacturing the same |
US10032868B2 (en) | 2016-09-09 | 2018-07-24 | Texas Instruments Incorporated | High performance super-beta NPN (SBNPN) |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4792501A (en) * | 1985-05-15 | 1988-12-20 | Energy Conversion Devices, Inc. | Multilayered article including crystallization inhibiting layer and method for fabricating same |
US4960719A (en) * | 1988-02-04 | 1990-10-02 | Seikosha Co., Ltd. | Method for producing amorphous silicon thin film transistor array substrate |
US4988632A (en) * | 1990-01-02 | 1991-01-29 | Motorola, Inc. | Bipolar process using selective silicon deposition |
US5266504A (en) * | 1992-03-26 | 1993-11-30 | International Business Machines Corporation | Low temperature emitter process for high performance bipolar devices |
JPH05326557A (ja) * | 1992-05-20 | 1993-12-10 | Matsushita Electric Ind Co Ltd | 薄膜の堆積方法及び薄膜トランジスタの製造方法 |
US5213989A (en) * | 1992-06-24 | 1993-05-25 | Motorola, Inc. | Method for forming a grown bipolar electrode contact using a sidewall seed |
JP3349198B2 (ja) * | 1993-07-01 | 2002-11-20 | 株式会社日立製作所 | バイポ−ラトランジスタの製造方法 |
-
1995
- 1995-11-20 SE SE9504150A patent/SE508635C2/sv not_active IP Right Cessation
-
1996
- 1996-11-20 EP EP96940210A patent/EP0956586B1/en not_active Expired - Lifetime
- 1996-11-20 WO PCT/SE1996/001511 patent/WO1997019465A1/en active IP Right Grant
- 1996-11-20 DE DE69635867T patent/DE69635867T2/de not_active Expired - Lifetime
- 1996-11-20 AU AU77152/96A patent/AU7715296A/en not_active Abandoned
- 1996-11-20 ES ES96940210T patent/ES2258782T3/es not_active Expired - Lifetime
- 1996-11-20 JP JP9519655A patent/JP2000501234A/ja active Pending
- 1996-11-20 KR KR10-1998-0703539A patent/KR100495284B1/ko not_active IP Right Cessation
- 1996-11-20 CA CA002237887A patent/CA2237887A1/en not_active Abandoned
- 1996-11-20 CN CN96198419A patent/CN1100344C/zh not_active Expired - Lifetime
-
1997
- 1997-02-17 TW TW086101832A patent/TW364167B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
SE9504150D0 (sv) | 1995-11-20 |
JP2000501234A (ja) | 2000-02-02 |
TW364167B (en) | 1999-07-11 |
SE508635C2 (sv) | 1998-10-26 |
CN1202980A (zh) | 1998-12-23 |
WO1997019465A1 (en) | 1997-05-29 |
KR100495284B1 (ko) | 2005-09-30 |
CA2237887A1 (en) | 1997-05-29 |
AU7715296A (en) | 1997-06-11 |
KR19990067517A (ko) | 1999-08-25 |
EP0956586B1 (en) | 2006-03-01 |
DE69635867D1 (de) | 2006-04-27 |
DE69635867T2 (de) | 2006-09-07 |
EP0956586A1 (en) | 1999-11-17 |
SE9504150L (sv) | 1997-05-21 |
ES2258782T3 (es) | 2006-09-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: INFINEON TECHNOLOGIES AG Free format text: FORMER OWNER: ELLISON TELEPHONE CO., LTD. Effective date: 20040827 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20040827 Address after: Munich, Germany Patentee after: Infennian Technologies AG Address before: Stockholm Patentee before: Ericsson Telephone AB |
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REG | Reference to a national code |
Ref country code: HK Ref legal event code: WD Ref document number: 1017947 Country of ref document: HK |
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CX01 | Expiry of patent term |
Granted publication date: 20030129 |
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EXPY | Termination of patent right or utility model |