CN110034185B - 半导体装置 - Google Patents

半导体装置 Download PDF

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CN110034185B
CN110034185B CN201910023830.9A CN201910023830A CN110034185B CN 110034185 B CN110034185 B CN 110034185B CN 201910023830 A CN201910023830 A CN 201910023830A CN 110034185 B CN110034185 B CN 110034185B
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永井昂哉
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Denso Corp
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Abstract

本发明提供一种能够抑制IGBT在关断时的噪声的同时抑制导通时的回滞现象的技术。本发明的半导体基板具备二极管区域、和紧接着所述二极管区域设置的IGBT区域。所述IGBT区域具备多个第一导电类型的低浓度区，所述多个低浓度区设置在缓冲区与集电极区之间，在平行于所述半导体基板的方向上有间隔地并排排列，并且杂质浓度低于集电极区。所述集电极区具备接触部，所述接触部在相邻的所述低浓度区与所述低浓度区之间与所述缓冲区接触。

Description

半导体装置
技术领域
本说明书公开的技术涉及一种半导体装置。
背景技术
专利文献1中公开了一种IGBT(Insulating Gate Bi-polar Transistor)。专利文献1的IGBT具备半导体基板、配置于半导体基板的表面的表面电极、以及配置于半导体基板的背面的背面电极。另外，专利文献1的IGBT还具备：设置在半导体基板的表面所露出的范围内的n型发射极区、设置在半导体基板的背面所露出的范围内的p型集电极区、设置在发射极区与集电极区之间的n型漂移区、设置在发射极区与漂移区之间的p型体区、以及从半导体基板的表面贯穿发射极区和体区而延伸至到达漂移区的深度的栅极沟槽。栅极沟槽的内部配置有栅极。另外，专利文献1的IGBT还具备设置在漂移区与集电极区之间的n型缓冲区、以及设置在缓冲区与集电极区之间的p型低浓度区。缓冲区中的杂质浓度高于漂移区中的杂质浓度。低浓度区中的杂质浓度低于集电极区中的杂质浓度。
在专利文献1的技术中，当IGBT为导通状态时，载流子会积蓄在低浓度区中。由此，能够缓解IGBT在关断时电流的急剧减小。通过积蓄在低浓度区中的载流子移动至集电极区而使得电流平缓地减小。另外，由于缓解了电流的急剧减小，因此抑制了表面电极与背面电极之间的电压振荡(噪声)。
专利文献1：日本特开2002-305305号公报
在专利文献1的技术中，如上所述能够抑制IGBT关断时的噪声。但是，在专利文献1的技术中，由于低浓度区中的杂质浓度低于集电极区中的杂质浓度从而低浓度区的电阻高于集电极区的电阻，因此，有可能在IGBT导通时阻碍通过低浓度区的载流子的移动。因此，有可能发生当IGBT导通时发射极区与集电极区之间的电压暂时上升后流过IGBT的电流才增加的回滞现象。因此，本说明书提供一种能够抑制IGBT在关断时的噪声的同时抑制导通时的回滞现象的技术。
发明内容
本说明书中公开的半导体装置具备：半导体基板；表面电极，其配置在所述半导体基板的表面；以及背面电极，其配置在所述半导体基板的背面。所述半导体基板具备二极管区域、以及紧接着所述二极管区域设置的IGBT区域。所述二极管区域具备：第一导电类型的阳极区，其设置在所述半导体基体的表面所露出的范围内；第二导电类型的阴极区，其设置在所述半导体基体的背面所露出的范围内；以及第二导电类型的二极管漂移区，其设置在所述阳极区与所述阴极区之间。所述IGBT区域具备：第二导电类型的发射极区，其设置在所述半导体基体的表面所露出的范围内；第一导电类型的集电极区，其设置在所述半导体基体的背面所露出的范围内；第二导电类型的IGBT漂移区，其设置在所述发射极区与所述集电极区之间，紧接着所述二极管漂移区设置；第一导电类型的体区，其设置在所述发射极区与所述IGBT漂移区之间；栅极沟槽，其从所述半导体基板的表面贯穿所述发射极区和所述体区而延伸至到达所述IGBT漂移区的深度；第二导电类型的缓冲区，其设置在所述IGBT漂移区与所述集电极区之间，并且杂质浓度高于所述IGBT漂移区；以及多个第一导电类型的低浓度区，其设置在所述缓冲区与所述集电极区之间，在平行于所述半导体基板的方向有间隔地并排排列，其杂质浓度低于所述集电极区。所述栅极沟槽的内部配置有栅极。所述集电极区在相邻的所述低浓度区与所述低浓度区之间具有与所述缓冲区接触的第一接触部。
根据这一结构，当IGBT为导通状态时(当电流流过IGBT区域时)载流子会在低浓度区中积蓄。由此，能够缓解IGBT关断时的电流的急剧减小。通过积蓄在低浓度区中的载流子向集电极区移动而使电流平缓地减小。另外，由于缓解了电流的急剧减小，因此能够抑制表面电极与背面电极之间的电压振荡(噪声)。另外，根据上述结构，由于集电极区具备与缓冲区接触的第一接触部，因此当IGBT导通时，载流子通过第一接触部而移动。因此，不会妨碍在IGBT导通时载流子在集电极区与缓冲区之间进行的移动。由此，能够抑制IGBT导通时发射极区与集电极区之间的电压暂时上升后流过IGBT的电流才增加的情况。也就是说，能够抑制回滞现象。由此，根据上述结构，能够抑制IGBT在关断时的噪声的同时抑制导通时的回滞现象。
附图说明
图1是实施例所涉及的半导体装置的剖视图。
图2是图1的要部Ⅱ的放大视图。
图3是变形例1所涉及的与半导体装置10的图2相对应的图。
图4是变形例2所涉及的与半导体装置10的图2相对应的图。
图5是变形例3所涉及的与半导体装置10的图2相对应的图。
图6是变形例4所涉及的与半导体装置10的图2相对应的图。
图7是变形例5所涉及的与半导体装置10的图2相对应的图。
具体实施方式
参照附图对实施例所涉及的半导体装置10进行说明。如图1所示，实施例所涉及的半导体装置10具备半导体基板12、配置于半导体基板12的表面121的表面电极62、以及配置于半导体基板12的背面122的背面电极64。此外，在图1中，为了图的易读性而省略了表面电极62和背面电极64的图示。在以下的说明中，将平行于半导体基板12的一个方向称为X方向，将平行于半导体基板12并且与X方向正交的方向称为Y方向，将垂直于半导体基板12的方向称为Z方向。
表面电极62和背面电极64由例如钛(Ti)、硅化铝(AlSi)、或者铝(Al)等金属形成。表面电极62覆盖半导体基板12的表面121。背面电极64覆盖半导体基板12的背面122。表面电极62和背面电极64均横跨后述的半导体基板12的二极管区域18和IGBT区域16形成。
半导体基板12具备二极管区域18和IGBT区域16。二极管区域18和IGBT区域16在X方向上并列。IGBT区域16和二极管区域18彼此邻接设置。半导体基板12上形成有半导体元件。半导体基板12的二极管区域18形成有FWD(Free Wheeling Diode)。半导体基板12的IGBT区域16形成有IGBT(Insulated Gate Bipolar Transistor)。同一块半导体基板12上形成有IGBT和FWD。IGBT和FWD以反并联的状态形成。由此形成RC-IGBT(ReverseConducting Insulated Gate Bipolar Transistor)。
半导体基板12的二极管区域18从半导体基板12的表面121侧朝向背面122侧顺序具备阳极区32、二极管漂移区26a、二极管缓冲区28a、以及阴极区30。半导体基板12的IGBT区域16从半导体基板12的表面121侧朝向背面122侧顺序具备发射极区20、体接触区22、体区24、IGBT漂移区26b、IGBT缓冲区28b、多个低浓度区34、以及集电极区31。另外，半导体基板12的二极管区域18和IGBT区域16还形成有多个栅极沟槽40。
(二极管区域18)
阳极区32设置在与栅极沟槽40相接触的范围内。阳极区32为p型(第一导电类型的一个例子)区域。阳极区32具备上侧区域322和下侧区域324。上侧区域322设置在半导体基板12的表面121所露出的范围内。上侧区域322与表面电极62欧姆接触。下侧区域324设置在上侧区域322的下方。下侧区域324设置在上侧区域322与二极管漂移区26a之间。下侧区域324的杂质浓度低于上侧区域322的杂质浓度。
二极管漂移区26a设置在阳极区32的下方。二极管漂移区26a设置在阳极区32与阴极区30之间。二极管漂移区26a设置在与栅极沟槽40相接触的范围内。二极管漂移区26a为n型(第二导电类型的一个例子)区域。
二极管缓冲区28a设置在二极管漂移区26a的下方。二极管缓冲区28a设置在二极管漂移区26a与阴极区30之间。二极管缓冲区28a为n型区域。二极管缓冲区28a的杂质浓度高于二极管漂移区26a的杂质浓度。
阴极区30设置在二极管缓冲区28a的下方。阴极区30设置在半导体基板12的背面122所露出的范围内。阴极区30为n型区域。阴极区30与背面电极64欧姆接触。
(IGBT区域16)
发射极区20呈岛状地设置在半导体基板12的表面121所露出的范围内。发射极区20设置在与栅极沟槽40相接触的范围内。发射极区20为n型区域。发射极区20与表面电极62欧姆接触。
如图1所示，体接触区22呈岛状地设置在半导体基板12的表面121所露出的范围内。体接触区22紧邻着发射极区20设置。体接触区22为p型区域。体接触区22与表面电极62欧姆接触。
如图1所示，体区24设置在发射极区20和体接触区22的下方。体区24设置在发射极区20及体接触区22构成的区与IGBT漂移区26b之间。体区24设置在与栅极沟槽40相接触的范围内。体区24为p型区域。体区24的杂质浓度低于体接触区22的杂质浓度。
IGBT漂移区26b设置在体区24的下方。IGBT漂移区26b设置在体区24与IGBT缓冲区28b之间。IGBT漂移区26b隔着体区24和IGBT缓冲区28b设置在发射极区20与集电极区31之间。IGBT漂移区26b设置在与栅极沟槽40相接触的范围内。IGBT漂移区26b紧邻着二极管漂移区26a设置。IGBT漂移区26b与二极管漂移区26a成为一体。IGBT漂移区26b为n型区域。IGBT漂移区26b的杂质浓度低于发射极区20的杂质浓度。
IGBT缓冲区28b设置在IGBT漂移区26b的下方。IGBT缓冲区28b设置在IGBT漂移区26b与集电极区31之间。IGBT缓冲区28b紧接着二极管缓冲区28a设置。IGBT缓冲区28b与二极管缓冲区28a成为一体。IGBT缓冲区28b为n型区域。IGBT缓冲区28b的杂质浓度高于IGBT漂移区26b的杂质浓度。
多个低浓度区34设置在IGBT缓冲区28b的下方。多个低浓度区34设置在IGBT缓冲区28b与集电极区31之间。多个低浓度区34在平行于半导体基板12的方向上有间隔地并排排列。多个低浓度区34在二极管区域18和IGBT区域16邻接的方向(X方向)上有间隔地并排排列。各低浓度区34为p型区域。各低浓度区34的杂质浓度低于集电极区31的杂质浓度。如图2所示，各低浓度区34具备横向接触部60。横向接触部60在二极管区域18和IGBT区域16邻接的方向(X方向)上与集电极区31接触。沿X方向相邻的低浓度区34与低浓度区34之间的距离，在集电极区31这一侧大于IGBT缓冲区28b这一侧。横向接触部60在低浓度区34处相对于半导体基板12的表面121倾斜。
集电极区31设置在IGBT缓冲区28b及多个低浓度区34的下方。集电极区31设置在半导体基板12的背面122所露出的范围内。集电极区31在二极管区域18和IGBT区域16邻接的方向(X方向)上与阴极区30接触。集电极区31为p型区域。集电极区31与背面电极64欧姆接触。集电极区31具备多个纵向接触部50(第一接触部的一个例子)。各纵向接触部50在相邻的低浓度区34与低浓度区34之间与IGBT缓冲区28b接触。各纵向接触部50形成在集电极区31的表面所露出的范围内。
在观察沿着与半导体基板12垂直且为多个低浓度区34并列的方向剖断的半导体基板12的剖面时，集电极区31的面积小于多个低浓度区34的面积的总和(多个低浓度区34的面积的总和大于集电极区31的面积)。各个低浓度区34的面积小于集电极区31的面积。
如图1所示，IGBT区域16中的各栅极沟槽40从半导体基板12的表面121贯穿发射极区20和体区24而延伸至到达IGBT漂移区26b的深度。二极管区域18中的各栅极沟槽40从半导体基板12的表面121贯穿阳极区32而延伸至到达二极管漂移区26a的深度。栅极沟槽40的内部配置有栅极绝缘膜42和栅极44。栅极绝缘膜42覆盖栅极沟槽40的内表面。栅极绝缘膜42在半导体基板12和栅极44之间进行绝缘。栅极44配置在栅极绝缘膜42的内侧。栅极44的上方配置有层间绝缘膜46。层间绝缘膜46在栅极44和表面电极62之间进行绝缘。
接下来，对半导体装置10的动作进行说明。首先，对IGBT为导通状态(电流流过IGBT区域16的状态)时的动作进行说明。当IGBT为导通状态时，向半导体装置10的背面电极64施加高于表面电极62的电位。另外，向栅极44施加阈值以上的电位，在IGBT区域16的体区24形成沟道。由此，电子从表面电极62经由发射极区20、体区24的沟道、IGBT漂移区26b、IGBT缓冲区28b、以及集电极区31而流向背面电极64。另外，一部分电子从IGBT缓冲区28b经由多个低浓度区34、集电极区31而流向背面电极64。另外，在电子流动的同时，空穴从背面电极64经由集电极区31、IGBT缓冲区28b、IGBT漂移区26b、体区24、以及体接触区22而流向表面电极62。另外，一部分空穴从集电极区31经由多个低浓度区34而流向IGBT缓冲区28b。此时，流过各低浓度区34的空穴的一部分会积蓄在各低浓度区34中。
接下来，对IGBT关断时的动作进行说明。在此情况下，使栅极44上施加的电位为阈值以下。由此，IGBT区域16的体区24中形成的沟道消失。另外，向半导体装置10的表面电极62施加高于背面电极64的电位。由此，IGBT关断(电流不再流过IGBT区域16)。如果IGBT关断，则积蓄在半导体基板12的IGBT区域16中的空穴经由集电极区31向背面电极64吐出。此时，积蓄在多个低浓度区34中的空穴向集电极区31移动，由此，流过IGBT区域16的电流平缓地减小。因此，能够缓解IGBT关断时电流的急剧减小。
另外，在IGBT关断的同时，二极管导通(电流流过二极管区域18)。如果二极管导通，则电子从背面电极64经由阴极区30、二极管缓冲区28a、二极管漂移区26a、体区24、以及阳极区32而流向表面电极62。另外，在电子流动的同时，空穴从表面电极62经由阳极区32、体区24、二极管漂移区26a、二极管缓冲区28a、以及阴极区30而流向背面电极64。
接下来，对IGBT导通时的动作进行说明。在此情况下，向半导体装置10的背面电极64施加高于表面电极62的电位。另外，向栅极44施加阈值以上的电位，在IGBT区域16的体区24形成沟道。由此，IGBT导通(电流流过IGBT区域16)。如果IGBT导通，则电子从表面电极62经由发射极区20、体区24的沟道、IGBT漂移区26b、IGBT缓冲区28b、以及集电极区31而流向背面电极64。另外，在电子流动的同时，空穴从背面电极64经由集电极区31、IGBT缓冲区28b、IGBT漂移区26b、体区24、以及体接触区22而流向表面电极62。此时，由于集电极区31具备与IGBT缓冲区28b接触的纵向接触部50，因而载流子(电子和空穴)通过接触部移动。因此，在IGBT导通时载流子在集电极区31与IGBT缓冲区28b之间的移动不会被妨碍。由此，能够抑制IGBT导通时发射极区20与集电极区31之间的电压暂时上升后流过IGBT的电流才增加的情况。也就是说，能够抑制回滞现象。
另外，在IGBT导通后，一部分电子从IGBT缓冲区28b经由多个低浓度区34而流向集电极区31。另外，一部分空穴从集电极区31经由多个低浓度区34而流向IGBT缓冲区28b。此时，流过各低浓度区34的空穴的一部分会积蓄在各低浓度区34中。
以上对实施例所涉及的半导体装置10进行了说明。正如从上述说明中能够明确地，半导体装置10具备设置在IGBT缓冲区28b与集电极区31之间的多个低浓度区34。各低浓度区34的杂质浓度低于集电极区31的杂质浓度。多个低浓度区34在平行于半导体基板12的方向(X方向)上有间隔地并排排列。另外，集电极区31在相邻的低浓度区34与低浓度区34之间具备与IGBT缓冲区28b接触的纵向接触部50。根据这一结构，由于当IGBT为导通状态时在多个低浓度区34中积蓄有空穴，因此，能够缓解IGBT关断时的电流的急剧减小。由此，当IGBT关断时，能够抑制表面电极与背面电极之间的电压振荡的情况(噪声)。另外，当IGBT导通时，载流子(电子和空穴)通过集电极区31的纵向接触部50沿纵向流动。因此，载流子在IGBT缓冲区28b与集电极区31之间的移动不会被妨碍，从而能够抑制回滞现象。由此，根据上述半导体装置10，能够在抑制IGBT关断时的噪声的同时抑制导通时的回滞现象。
另外，在上述半导体装置10中，与低浓度区34相比杂质浓度较高的集电极区31，在二极管区域18和IGBT区域16邻接的方向(X方向)上与阴极区30接触。因此，能够明确阴极区30的边界，从而能够明确二极管区域18与IGBT区域16之间的边界。另外，在上述半导体装置10中，多个低浓度区34的面积的总和大于集电极区31的面积。因此，能够增加积蓄在多个低浓度区34中的载流子的量。由此，由于缓解了IGBT关断时的电流的急剧减小，因此能够抑制噪声。
以上对一个实施方式进行了说明，但具体实施方式并不被上述实施例所限定。在以下的说明中，对于与上述说明中的构成相同的构成标注相同的标号而省略说明。
在上述实施例中，多个低浓度区34是在X方向上并列设置的，但并不被这一结构所限定。在其他实施例中，多个低浓度区34也可以在Y方向上并列设置。也就是说，多个低浓度区34也可以在与二极管区域18和IGBT区域16并列的方向正交的方向上并列设置。
另外，在上述实施例中构成为，在观察沿着与半导体基板12垂直且为多个低浓度区34并列的方向剖断的半导体基板12的剖面时，多个低浓度区34的面积的总和大于集电极区31的面积，但并不限定于这一构成。在其他实施例中，多个低浓度区34的面积的总和也可以小于集电极区31的面积。
(变形例1)
对变形例进行说明。如图3所示，在变形例1所涉及的半导体装置10中，各低浓度区34的各横向接触部60(第二接触部的一个例子)与垂直于半导体基板12的方向(Z方向)平行地延伸。在图3所示的剖面中，各低浓度区34形成为长方形。
(变形例2)
如图4所示，在变形例2所涉及的半导体装置10中，各低浓度区34的各横向接触部60是弯曲的。各低浓度区34的各横向接触部60以在集电极区31侧凸出的方式弯曲。
(变形例3)
如图5所示，在变形例3所涉及的半导体装置10中，各低浓度区34的各横向接触部60以在各低浓度区34侧凸出的方式弯曲。
(变形例4)
如图6所示，在变形例4所涉及的半导体装置10中，各低浓度区34的各横向接触部60以在集电极区31侧凸出的方式弯折。
(变形例5)
如图7所示，在变形例5所涉及的半导体装置10中，各低浓度区34的各横向接触部60形成为阶梯状。
本说明书所公开的技术要素在下面列出。此外，以下的各技术要素分别独立地起作用。
在本说明书公开的一个例子的半导体装置中，集电极区也可以在二极管区域与IGBT区域邻接的方向上与阴极区接触。
根据这一结构，由于在第二导电类型的阴极区的旁边设置有杂质浓度较高的第一导电类型的集电极区，因此，能够明确阴极区的边界。由此，能够明确二极管区域与IGBT区域之间的边界。
在本说明书公开的一个例子的半导体装置中，当观察沿着与半导体基板垂直且为多个低浓度区并列的方向剖断的半导体基板的剖面时，多个低浓度区的面积的总和也可以大于集电极区的面积。
根据这一结构，能够使得IGBT为导通状态时积蓄在低浓度区中的载流子的量增加。因此，能够抑制IGBT关断时的噪声。
在本说明书公开的一个例子的半导体装置中，各低浓度区也可以具备在二极管区域与IGBT区域邻接的方向上与集电极区接触的第二接触部。各低浓度区的各第二接触部也可以与垂直于半导体基板的方向平行地延伸。
根据这一结构，当在半导体基板上设置低浓度区和集电极区时，能够以简易的工序进行设置。
以上对本发明的具体实施例进行了详细说明，但上述说明都不过是例示，并不限定权利要求的范围。权利要求的范围还包含对以上例示的具体实施例进行各种变形、变更而得到的内容。本说明书或附图中说明的技术要素可以单独地或者通过各种组合来发挥技术实用性，并不被申请时的权利要求书所记载的组合所限定。另外，本说明书或附图中例示的技术能够同时实现多个目的，仅实现其中一个目的本身也具有技术实用性。
标号的说明
10：半导体装置
12：半导体基板
16：IGBT区域
18：二极管区域
20：发射极区
22：体接触区
24：体区
26a：二极管漂移区
26b：IGBT漂移区
28a：二极管缓冲区
28b：IGBT缓冲区
30：阴极区
31：集电极区
32：阳极区
34：低浓度区
40：栅极沟槽
42：栅极绝缘膜
44：栅极
46：层间绝缘膜
50：纵向接触部
60：横向接触部
62：表面电极
64：背面电极
121：表面
122：背面
322：上侧区域
324：下侧区域

Claims (4)

1.一种半导体装置，其特征在于，具备：
半导体基板；
表面电极，其配置在所述半导体基板的表面；以及
背面电极，其配置在所述半导体基板的背面，
所述半导体基板具备二极管区域、以及紧接着所述二极管区域设置的IGBT区域，
所述二极管区域具备：
第一导电类型的阳极区，其设置在所述半导体基体的表面所露出的范围内；
第二导电类型的阴极区，其设置在所述半导体基体的背面所露出的范围内；以及
第二导电类型的二极管漂移区，其设置在所述阳极区与所述阴极区之间，
所述IGBT区域具备：
第二导电类型的发射极区，其设置在所述半导体基体的表面所露出的范围内；
第一导电类型的集电极区，其设置在所述半导体基体的背面所露出的范围内；
第二导电类型的IGBT漂移区，其设置在所述发射极区与所述集电极区之间，紧接着所述二极管漂移区设置；
第一导电类型的体区，其设置在所述发射极区与所述IGBT漂移区之间；
栅极沟槽，其从所述半导体基板的表面贯穿所述发射极区和所述体区而延伸至到达所述IGBT漂移区的深度；
第二导电类型的缓冲区，其设置在所述IGBT漂移区与所述集电极区之间，并且杂质浓度高于所述IGBT漂移区；以及
多个第一导电类型的低浓度区，其设置在所述缓冲区与所述集电极区之间，在平行于所述半导体基板的方向有间隔地并排排列，其杂质浓度低于所述集电极区，
所述栅极沟槽的内部配置有栅极，
所述集电极区在相邻的所述低浓度区与所述低浓度区之间具有与所述缓冲区接触的第一接触部。
2.根据权利要求1所述的半导体装置，其特征在于，
所述集电极区在所述二极管区域和所述IGBT区域邻接的方向上与所述阴极区接触。
3.根据权利要求1或2所述的半导体装置，其特征在于，
当观察沿着与所述半导体基板垂直且为多个所述低浓度区并列的方向剖断的所述半导体基板的剖面时，多个所述低浓度区的面积的总和大于所述集电极区的面积。
4.根据权利要求1所述的半导体装置，其特征在于，
各所述低浓度区具备在所述二极管区域与所述IGBT区域邻接的方向上与所述集电极区接触的第二接触部，
各所述低浓度区的各所述第二接触部与垂直于所述半导体基板的方向平行地延伸。
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