CN110034172B - 堆叠状的iii-v半导体构件 - Google Patents
堆叠状的iii-v半导体构件 Download PDFInfo
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- CN110034172B CN110034172B CN201811569005.0A CN201811569005A CN110034172B CN 110034172 B CN110034172 B CN 110034172B CN 201811569005 A CN201811569005 A CN 201811569005A CN 110034172 B CN110034172 B CN 110034172B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 105
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000002019 doping agent Substances 0.000 claims abstract description 24
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 14
- -1 GaAs compound Chemical class 0.000 claims abstract description 7
- 239000011651 chromium Substances 0.000 claims abstract description 7
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 6
- 230000007547 defect Effects 0.000 claims description 23
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims 1
- 239000012815 thermoplastic material Substances 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
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- 125000000217 alkyl group Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
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- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
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- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE102017011878.7A DE102017011878A1 (de) | 2017-12-21 | 2017-12-21 | Stapelförmiges III-V-Halbleiterbauelement |
DE102017011878.7 | 2017-12-21 |
Publications (2)
Publication Number | Publication Date |
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CN110034172A CN110034172A (zh) | 2019-07-19 |
CN110034172B true CN110034172B (zh) | 2022-06-24 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201811569005.0A Active CN110034172B (zh) | 2017-12-21 | 2018-12-21 | 堆叠状的iii-v半导体构件 |
Country Status (5)
Country | Link |
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US (1) | US10847626B2 (fr) |
EP (2) | EP3503204B1 (fr) |
JP (1) | JP6771125B2 (fr) |
CN (1) | CN110034172B (fr) |
DE (1) | DE102017011878A1 (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102017002936A1 (de) * | 2017-03-24 | 2018-09-27 | 3-5 Power Electronics GmbH | III-V-Halbleiterdiode |
DE102018000395A1 (de) | 2018-01-18 | 2019-07-18 | 3-5 Power Electronics GmbH | Stapelförmige lll-V-Halbleiterdiode |
DE102020001843A1 (de) * | 2020-03-20 | 2021-09-23 | Azur Space Solar Power Gmbh | Stapelförmige hochsperrende InGaAs-Halbleiterleistungsdiode |
DE102021000609A1 (de) * | 2021-02-08 | 2022-08-11 | 3-5 Power Electronics GmbH | Stapelförmige III-V-Halbleiterdiode |
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US5733815A (en) * | 1992-05-22 | 1998-03-31 | Ramot University Authority For Applied Research & Industrial Development Ltd. | Process for fabricating intrinsic layer and applications |
US20060281263A1 (en) * | 2005-05-20 | 2006-12-14 | Shinya Yamazaki | Semiconductor devices and method of manufacturing them |
CN102299069A (zh) * | 2010-06-28 | 2011-12-28 | 塞莱斯系统集成公司 | 制造垂直pin型二极管的方法及垂直pin型二极管 |
CN106098553A (zh) * | 2015-04-30 | 2016-11-09 | 英飞凌科技股份有限公司 | 通过外延生长制造半导体装置 |
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US4001055A (en) * | 1973-05-28 | 1977-01-04 | Charmakadze Revaz A | Semiconductor light-emitting diode and method for producing same |
US6100575A (en) * | 1987-08-19 | 2000-08-08 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor switching device having different carrier lifetimes between a first portion serving as a main current path and the remaining portion of the device |
EP1492220A3 (fr) * | 1991-09-20 | 2005-03-09 | Hitachi, Ltd. | Dispositif de conversion de puissance et module semi-conducteur indiqué pour l'utilisation dans le dispositif |
JP3994443B2 (ja) * | 1995-05-18 | 2007-10-17 | 三菱電機株式会社 | ダイオード及びその製造方法 |
AU5154300A (en) * | 1999-05-28 | 2000-12-18 | Advanced Power Devices, Inc. | Discrete schottky diode device with reduced leakage current |
JP2001077357A (ja) * | 1999-08-31 | 2001-03-23 | Toshiba Corp | 半導体装置 |
US20020163059A1 (en) * | 2000-02-17 | 2002-11-07 | Hamerski Roman J. | Device with epitaxial base |
KR100351042B1 (ko) * | 2000-04-04 | 2002-09-05 | 페어차일드코리아반도체 주식회사 | 역방향 차폐 모드에서도 높은 브레이크다운 전압을 갖는절연 게이트 바이폴라 트랜지스터 및 그 제조방법 |
JP3906076B2 (ja) * | 2001-01-31 | 2007-04-18 | 株式会社東芝 | 半導体装置 |
JP5080744B2 (ja) | 2006-03-17 | 2012-11-21 | 株式会社豊田中央研究所 | 半導体デバイス及びその製造方法 |
JP2010177361A (ja) | 2009-01-28 | 2010-08-12 | Kansai Electric Power Co Inc:The | ソフトリカバリーダイオード |
EP2535940B1 (fr) | 2011-06-14 | 2013-08-21 | ABB Technology AG | Diode bipolaire et son procédé de fabrication |
JP2013074181A (ja) * | 2011-09-28 | 2013-04-22 | Toyota Motor Corp | 半導体装置とその製造方法 |
US20140048845A1 (en) * | 2012-08-17 | 2014-02-20 | Samsung Electro-Mechanics Co., Ltd. | Semiconductor device and method for manufacturing the same |
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JPWO2015137374A1 (ja) | 2014-03-11 | 2017-04-06 | 古河電気工業株式会社 | 半導体レーザ素子 |
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DE102014223315B4 (de) * | 2014-11-14 | 2019-07-11 | Infineon Technologies Ag | Halbleiter-Metall-Übergang |
JP6334465B2 (ja) * | 2015-06-17 | 2018-05-30 | 富士電機株式会社 | 半導体装置 |
DE102016013542A1 (de) | 2016-11-14 | 2018-05-17 | 3 - 5 Power Electronics GmbH | Stapelförmige Schottky-Diode |
DE102017002936A1 (de) * | 2017-03-24 | 2018-09-27 | 3-5 Power Electronics GmbH | III-V-Halbleiterdiode |
DE102017002935A1 (de) * | 2017-03-24 | 2018-09-27 | 3-5 Power Electronics GmbH | III-V-Halbleiterdiode |
-
2017
- 2017-12-21 DE DE102017011878.7A patent/DE102017011878A1/de active Pending
-
2018
- 2018-12-17 EP EP18000975.5A patent/EP3503204B1/fr active Active
- 2018-12-17 EP EP21000132.7A patent/EP3916811A3/fr active Pending
- 2018-12-20 JP JP2018238369A patent/JP6771125B2/ja active Active
- 2018-12-21 US US16/229,990 patent/US10847626B2/en active Active
- 2018-12-21 CN CN201811569005.0A patent/CN110034172B/zh active Active
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US5733815A (en) * | 1992-05-22 | 1998-03-31 | Ramot University Authority For Applied Research & Industrial Development Ltd. | Process for fabricating intrinsic layer and applications |
US20060281263A1 (en) * | 2005-05-20 | 2006-12-14 | Shinya Yamazaki | Semiconductor devices and method of manufacturing them |
CN102299069A (zh) * | 2010-06-28 | 2011-12-28 | 塞莱斯系统集成公司 | 制造垂直pin型二极管的方法及垂直pin型二极管 |
CN106098553A (zh) * | 2015-04-30 | 2016-11-09 | 英飞凌科技股份有限公司 | 通过外延生长制造半导体装置 |
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Also Published As
Publication number | Publication date |
---|---|
US20190198625A1 (en) | 2019-06-27 |
JP6771125B2 (ja) | 2020-10-21 |
US10847626B2 (en) | 2020-11-24 |
EP3503204B1 (fr) | 2022-01-19 |
DE102017011878A1 (de) | 2019-06-27 |
EP3916811A2 (fr) | 2021-12-01 |
CN110034172A (zh) | 2019-07-19 |
EP3916811A3 (fr) | 2022-01-26 |
EP3503204A3 (fr) | 2019-10-02 |
JP2019114789A (ja) | 2019-07-11 |
EP3503204A2 (fr) | 2019-06-26 |
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