CN109991300A - 气体传感器封装件 - Google Patents
气体传感器封装件 Download PDFInfo
- Publication number
- CN109991300A CN109991300A CN201811540317.9A CN201811540317A CN109991300A CN 109991300 A CN109991300 A CN 109991300A CN 201811540317 A CN201811540317 A CN 201811540317A CN 109991300 A CN109991300 A CN 109991300A
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- China
- Prior art keywords
- gas sensor
- packaging part
- lid
- package substrates
- protective film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Abstract
公开一种气体传感器封装件。该气体传感器封装件包括封装基底、位于封装基底上的控制器、位于控制器上的多个气体传感器以及位于封装基底上的盖,并且盖包括在盖的第一表面与第二表面之间延伸的孔,盖的第一表面背向封装基底并且盖的第二表面面向封装基底。多个气体传感器感测不同类型的气体。
Description
本申请要求于2018年1月2日在韩国知识产权局提交的第10-2018-0000190号韩国专利申请的优先权,该韩国专利申请的全部内容通过引用包含于此。
技术领域
根据发明构思的示例实施例涉及一种气体传感器封装件。
背景技术
通常,气体传感器通过利用根据气体分子的吸附的电导率或者电阻的变化特性来测量分析目标气体的量。可以使用金属氧化物半导体、固体电解质材料或者其它有机材料来制造气体传感器。
空气质量通常影响人类健康。随着室内空间已被进一步封闭,并且含有化学物质的建筑材料的使用已增加,空气污染已成为社会问题。气体传感器可以有益于实现提高的精度。此外,正在进行研究以将气体传感器应用于蜂窝电话或者可穿戴装置。
发明内容
发明构思的一些示例实施例提供一种具有提高感测精度和增强耐用性的气体传感器封装件。
根据发明构思的示例性实施例,一种气体传感器封装件可以包括:封装基底;控制器,位于封装基底上;多个气体传感器,在控制器的上表面上彼此横向间隔开;盖,位于封装基底上并且安置在多个气体传感器上方,盖具有在盖的第一表面与第二表面之间延伸的孔,盖的第一表面背向封装基底并且盖的第二表面面向封装基底;以及保护膜,覆盖盖的孔,其中,气体传感器被构造为感测不同类型的气体。
根据发明构思的示例性实施例,一种气体传感器封装件可以包括:封装基底;第一气体传感器,位于封装基底上,第一气体传感器包括在第一气体传感器的顶表面上彼此横向间隔开的第一感测部和第一结合垫;第二气体传感器,位于封装基底上,第二气体传感器包括在第二气体传感器的顶表面上彼此横向间隔开的第二感测部和第二结合垫;模塑层,位于封装基底上,模塑层覆盖第一结合垫和第二结合垫;以及保护膜,位于模塑层上,保护膜与第一气体传感器的顶表面和第二气体传感器的顶表面间隔开,其中,模塑层暴露第一感测部和第二感测部。
附图说明
图1A示出展示根据示例性实施例的气体传感器封装件的平面图。
图1B示出沿图1A的线I-II截取的剖视图。
图2A示出展示根据示例性实施例的气体传感器封装件的平面图。
图2B示出沿图2A的线I-II截取的剖视图。
图2C示出展示根据示例性实施例的气体传感器封装件的剖视图。
图3A示出展示根据示例性实施例的气体传感器封装件的平面图。
图3B示出沿图3A的线I-II截取的剖视图。
图3C示出展示根据示例性实施例的气体传感器封装件的剖视图。
图4A示出根据示例性实施例的气体传感器封装件的平面图。
图4B示出沿图4A的线I-II截取的剖视图。
图4C示出展示根据示例性实施例的气体传感器封装件的剖视图。
图5示出展示根据示例性实施例的气体传感器封装件的剖视图。
具体实施方式
将参照附图来描述发明构思的示例性实施例。在整个说明书中,相同的附图标记可表示相同的组件。
现在将讨论根据发明构思的示例性实施例的气体传感器封装件。
图1A示出展示根据示例性实施例的气体传感器封装件的平面图。图1B示出沿图1A的线I-II截取的剖视图。
参照图1A和图1B,气体传感器封装件10可以包括封装基底100、控制装置210(例如,控制电路)、感测装置220(例如,感测电路)、第一键合引线251、盖300和保护膜400。气体传感器封装件10可以感测气体。封装基底100可以包括例如印刷电路板(PCB)或者引线框架。上导电垫(pad,或称为“焊盘”或“焊垫”)110和下导电垫120可以分别设置在封装基底100的顶表面和底表面上。还可以在下导电垫120上设置焊球(未示出)。下导电垫120可以结合到气体传感器封装件10外部的外部装置。下导电垫120可以通过内部布线电连接到上导电垫110。上接地垫115和下接地垫125可以在封装基底100的边缘部分处分别设置在封装基底100的顶表面和底表面上,但公开不限于此。还可以在下接地垫125上设置焊球(未示出)。下接地垫125可以被供应有接地电压。下接地垫125可以通过内部布线电连接到上接地垫115。在图中,虚线示意性地表示封装基底100内的内部布线。在此说明书中,术语“电连接/结合”可以包括直接连接/结合或者通过其它导电组件的间接连接/结合。上导电垫110、下导电垫120、上接地垫115和下接地垫125可以包括诸如铝或者铜的金属。
这里描述的装置的各种垫可以是连接到装置的内部布线的导电端子,并且可以在装置的内部布线和/或内部电路与外部源之间传输信号和/或电源电压。例如,半导体芯片的芯片垫可以电连接在半导体芯片的集成电路与连接到半导体芯片的装置之间并且在二者之间传输电源电压和/或信号。各种垫可以设置在装置的外表面上或附近,并且通常可以具有平坦的表面区域(通常比它们所连接的内部布线的相应表面区域大),以促进连接到诸如凸块或者焊球的另一端子和/或外部布线。
控制装置210可以安装在封装基底100上。第二键合引线252可以结合到上导电垫110和控制装置210的芯片垫。控制装置210可以通过第二键合引线252电连接到封装基底100。可选择地,控制装置210可以以倒装芯片方式安装在封装基底100上。在这种情况下,控制装置210可以通过凸块或者焊料(未示出)电连接到封装基底100。
本领域技术人员将理解的是,控制装置210和感测装置220可以通过可以使用基于半导体的制造技术或者其它制造技术形成的诸如逻辑电路、分立组件、微处理器、硬接线电路和布线连接等的电子电路物理地实现。根据示例实施例,控制装置210可以包括半导体芯片。控制装置210可以在其中包括多个诸如CMOS晶体管的集成电路。感测装置220可以包括用于感测气体的气体传感器芯片。控制装置210可以控制感测装置220。控制装置210可以称为控制器。
如这里所使用的,除非另外说明,否则描述为“电连接”的项目被构造为使得电信号可以从一个项目传递到其它项目。因此,物理连接到不允许电流通过其中的无源电绝缘组件(例如,印刷电路板的预浸料层、连接两个装置的电绝缘粘合剂、电绝缘底部填充层或者模塑层等)的无源导电组件(例如,布线、垫、内部电线等)不与该无源电绝缘组件电连接。
感测装置220可以堆叠在控制装置210的顶表面上。感测装置220可以包括设置在感测装置220的顶表面220a上的感测部230和结合垫240。感测部230和结合垫240可以设置在感测装置220的顶表面220a上,并且在平行于封装基底100的上表面的方向上彼此间隔开预定距离。例如,感测部230和结合垫240可以设置在感测装置220的顶表面220a的相对的边缘上。感测部230可以包括吸附分析目标气体的感测垫。感测装置220可以设置为多个,并且可以堆叠在控制装置210的顶表面上,并且在平行于封装基底100的上表面的方向上彼此间隔开预定距离。例如,在平行于封装基底100的上表面的方向上,多个感测装置220中的一个感测装置220可以设置在控制装置210的顶表面的一个边缘上,并且多个感测装置220中的另一个感测装置220可以设置在控制装置210的顶表面的另一边缘上。
根据示例实施例,吸附到感测部230的气体可以取决于感测部230的材料组分。例如,多个感测部230中的一个感测部230可以具有与多个感测部230中的另一个感测部230的材料组分不同的材料组分。感测部230的材料组分可以意味着包括在感测部230中的感测垫的材料组分。吸附到感测部230中的一个感测部230的气体可以具有与吸附到其它感测部230的气体的类型不同的类型。感测装置220因此可以感测彼此不同类型的气体。例如,感测装置220中的一个感测装置220可以感测胺气体,感测装置220中的其它感测装置220可以感测甲苯气体。因此,气体传感器封装件10可以定量地或者定性地分析各种类型的气体。感测装置220的数量可以取决于分析目标气体的类型。结合垫240可以与感测部230横向间隔开。
第一键合引线251可以设置在每个感测装置220的顶表面220a上。第一键合引线251可以结合到结合垫240以及控制装置210的芯片垫两者。每个感测装置220可以通过第一键合引线251电连接到控制装置210。在此说明书中,术语“电连接到控制装置210/感测装置220”可以意味着“电连接到控制装置210/感测装置220的集成电路”。
盖300可以设置在封装基底100上。盖300可以包括金属、塑料和聚合物。盖300可以保护控制装置210和感测装置220免受外部应力。外部应力可以是或者包括例如物理冲击或者杂质。杂质可以包括潮气和/或灰尘。腔体195可以通过封装基底100、盖300和保护膜400限定。例如,腔体195可以是被封装基底100、盖300和保护膜400包围的空间。腔体195可以被气体占据。气体可以包括分析目标气体。
盖300可以包括孔390。盖300可以具有第一表面300a和第二表面300b。盖300的第二表面300b可以与盖300的第一表面300a背对。盖300的第二表面300b可以面向封装基底100,并且盖300的第一表面300a可以背向封装基底100。孔390可以穿透盖300的第一表面300a和第二表面300b。例如,孔390可以在盖300的第一表面300a与第二表面300b之间延伸。气体可以通过孔390流入腔体195中。可以设置至少两个孔390。外部气体可以通过孔390中的一个孔被引入腔体195。腔体195内的气体可以通过其它孔390流出。然后,气体可以令人满意地在腔体195与在气体传感器封装件10外部的外部空间之间流动。与示出的不同,孔390中的至少一个孔可以设置在盖300的侧壁上。孔390在数量和平面形状上可以被各种改变。
保护膜400可以覆盖盖300的孔390。“保护膜400可以覆盖盖300的孔390”可以意味着保护膜400设置在盖300的孔390中,或者保护膜400设置在盖300的表面上且当在平面图中观看时与孔390叠置。在该实施例中,保护膜400可以存在于孔390中并且阻挡孔390。当在如图1A中所示的平面图中观看时,保护膜400可以与孔390叠置。腔体195可以设置在保护膜400和感测装置220之间。保护膜400可以包括气体流过的防水膜。可以通过保护膜400将外部气体引入腔体195中。感测装置220可以感测腔体195内的一种或者更多种气体。感测装置220可以被称为气体传感器。外部杂质会难以穿过保护膜400。杂质可以包括潮气和/或灰尘。因此可以防止由于杂质引起的感测噪声的发生,从而提高感测装置220的感测精度。可以防止或者减少杂质引起的对感测装置220的损坏。
术语“穿过保护膜400”可以意味着“穿过保护膜400的防水膜的气孔(未示出)”。当保护膜400的防水膜的气孔具有比大约0.1μm小的直径时,气体会难以穿过保护膜400。当保护膜400的防水膜的气孔具有比大约10μm大的直径时,杂质可以穿过保护膜400。在一些实施例中,保护膜400的防水膜的气孔可以具有从大约0.1μm到大约10μm范围的直径。因此,保护膜400可以允许气体通过,但不允许杂质通过。可以适当地调整保护膜400的防水膜的厚度以选择穿过保护膜400的气体。在一些实施例中,保护膜400的防水膜的厚度可以落在大约10μm至大约500μm的范围内。因此,保护膜400可以选择性地允许气体通过。
根据示例实施例,保护膜400可以包括聚合物。在一些实施例中,保护膜400可以包括疏水聚合物以防止腔体195接收诸如潮气的亲水性杂质。疏水聚合物可以包括例如聚(四氟乙烯)(PTFE)。保护膜400可以从Goretex公司获得,但不限于此。保护膜400可以由相同的材料均匀地形成。
连接构件130可以设置在封装基底100与盖300之间。连接构件130可以将盖300固定到封装基底100。连接构件130可以插置在上接地垫115与盖300之间,从而结合到上接地垫115。盖300可以通过连接构件130和上接地垫115电接地。连接构件130可以包括导电粘合剂或者焊料材料。例如,导电粘合剂可以包括分散在绝缘树脂内的导电颗粒。绝缘树脂可以包括环氧类树脂,导电颗粒可以包括金属。焊料材料可以包括例如锡(Sn)、铅(Pb)、铟(In)或者它们的合金。当盖300包括诸如金属的导电材料时,盖300可以屏蔽气体传感器封装件10的电磁干扰(EMI)。电磁干扰可以意味着电子装置的收发功能遭受通过从其它电子装置发射或者传输的电磁波引起的干扰。盖300可以减少或者防止控制装置210和感测装置220的操作干扰其它封装件的操作或者被其它封装件的操作干扰。可选地,盖300可以与上接地垫115电断开。
盖300与封装基底100和连接构件130一起可以封装控制装置210和感测装置220并将控制装置210和感测装置220密封在腔体195内。除了允许气体穿过保护膜400之外,腔体195可以是气密封的,并因此仅允许气体经由保护膜400的气孔流入和流出腔体195。
图2A示出展示根据示例性实施例的气体传感器封装件的平面图。图2B示出沿图2A的线I-II截取的剖视图。在下文中将省略与上述重复的描述。
参照图2A和图2B,气体传感器封装件11可以包括封装基底100、控制装置210、感测装置220、盖300和保护膜400。封装基底100、控制装置210、感测装置220和盖300可以与上面参照图1A和图1B所讨论的封装基底100、控制装置210、感测装置220和盖300基本相同。相比之下,保护膜400可以设置在盖300的第一表面300a上。保护膜400可以阻挡孔390。当在如图2A中所示的平面图中观看时,保护膜400可以与孔390叠置。保护膜400的宽度可以比孔390的宽度之和大。
粘附膜350可以插置在保护膜400与盖300的第一表面300a之间。保护膜400可以通过粘附膜350粘附到盖300。粘附膜350可以既不延伸到孔390中也不延伸到孔390上。粘附膜350可以在盖300与保护膜400之间密封。因此,外部杂质不会被引入在盖300与保护膜400之间。在此示例性实施例中,保护膜400、盖300和粘附膜350的外侧表面可以如图2B中所示为共面的。粘附膜350可以包括聚合物(例如,环氧类聚合物)。
图2C示出展示根据示例性实施例的气体传感器封装件的沿图2A的线I-II截取的剖视图。
参照图2A和图2C,气体传感器封装件12可以包括封装基底100、控制装置210、感测装置220、盖300和保护膜400。封装基底100、控制装置210、感测装置220和盖300可以与上面参照图1A和图1B所讨论的封装基底100、控制装置210、感测装置220和盖300基本相同。相比之下,保护膜400可以设置在盖300的第二表面300b上。保护膜400可以阻挡孔390。粘附膜350可以插置在保护膜400与盖300的第二表面300b之间。粘附膜350可以在盖300与保护膜400之间密封。在此示例性实施例中,保护膜400和粘附膜350的外侧表面以及盖300的进一步远离孔390并且连接到连接构件130的内侧表面可以如图2C中所示为共面的。
图3A示出展示根据示例性实施例的气体传感器封装件的平面图。图3B示出沿图3A的线I-II截取的剖视图。在下文中将省略与上述重复的描述。
参照图3A和图3B,气体传感器封装件13可以包括封装基底100、控制装置210、感测装置221、222、223和224、盖300、保护膜400和模塑层500。封装基底100、控制装置210和保护膜400可以与上面参照图1A和图1B所讨论的封装基底100、控制装置210和保护膜400基本相同。例如,保护膜400可以存在于孔390中并且阻挡孔390。
感测装置221至224可以包括第一感测装置221、第二感测装置222、第三感测装置223和第四感测装置224。感测装置221至224可以与上面参考图1A和图1B所讨论的感测装置220基本相同。感测装置221至224中的每个可以具有第一侧壁221c、222c、223c和224c中的相应一个以及面向其对应的第一侧壁221c至224c的第二侧壁221d、222d、223d和224d中的相应一个。相邻的两个感测装置221至224的两个第一侧壁可以彼此面对。例如,第一感测装置221的第一侧壁221c可以面对第二感测装置222的第一侧壁222c。第三感测装置223的第一侧壁223c可以面对第四感测装置224的第一侧壁224c。
第一感测装置221可以包括第一感测部231和第一结合垫241。第二感测装置222可以包括第二感测部232和第二结合垫242。如图3A中示出的,第三感测装置223可以包括第三感测部233和第三结合垫243。第四感测装置224可以包括第四感测部234和第四结合垫244。第一感测部231至第四感测部234可以与上面参照图1A和图1B所讨论的感测部230基本相同。第一感测部231至第四感测部234可以包括彼此不同的材料组分。例如,第二感测部232的材料组分可以与第一感测部231的材料组分不同。因此,吸附到第二感测部232的气体可以具有与吸附到第一感测部231的气体的类型不同的类型。第一感测部231至第四感测部234可以感测彼此不同类型的气体。
如图3A中示出的感测装置221至224可以被构造为使得感测部231至234设置为比它们相应的结合垫241至244靠近它们相应的第一侧壁221c至224c。例如,第一感测部231可以比第一结合垫241靠近第一感测装置221的第一侧壁221c。第二感测部232可以比第二结合垫242靠近第二感测装置222的第一侧壁222c。在这样的构造中,当在平面图中观看时,第一感测部231和第二感测部232可以彼此相邻地设置。例如,当在平面图中观看时,第一感测部231和第二感测部232可以设置在第一结合垫241与第二结合垫242之间。第三感测部233可以比第三结合垫243靠近第三感测装置223的第一侧壁223c。第四感测部234可以比第四结合垫244靠近第四感测装置224的第一侧壁224c。在这样的构造中,当在平面图中观看时,第三感测部233和第四感测部234可以彼此相邻地设置。当在平面图中观看时,第一感测部231至第四感测部234可以设置在控制装置210的中心部分上。当在平面图中观看时,结合垫241至244可以设置成比感测部231至234靠近控制装置210的边缘。
模塑层500可以设置在封装基底100上,覆盖控制装置210以及感测装置221至224的相应的侧壁221c、221d、222c、222d、223c、223d、224c和224d。模塑层500可以延伸到感测装置221至224中的每个的顶表面220a的一部分上。模塑层500可以覆盖第一结合垫241至第四结合垫244。由于第一结合垫241至第四结合垫244设置为比感测部231至234靠近控制装置210的边缘,所以可以容易地将模塑层500选择性地覆盖结合垫241至244。模塑层500可以封装并保护第一结合垫241至第四结合垫244。例如,结合垫241至244可以免于潮气引起的损坏(例如,腐蚀)。模塑层500可以覆盖第一键合引线251、第二键合引线252和上导电垫110。模塑层500可以封装并保护第一键合引线251、第二键合引线252和上导电垫110。
模塑层500可以不覆盖感测部231至234。感测部231至234可以暴露于腔体195。然后,感测部231至234可以感测腔体195内的气体。腔体195可以通过感测装置221至224、模塑层500、盖300和保护膜400来限定。例如,腔体195可以是被感测装置221至224、模塑层500、盖300和保护膜400包围的空间。因为第一感测部231至第四感测部234在平面图中彼此相邻地设置,因此可以容易地将腔体195设置在第一感测部231至第四感测部234上。
盖300可以设置在模塑层500的顶表面上。盖300可以与封装基底100间隔开,并且可以不电接地。粘附层550还可以插置在模塑层500与盖300之间。粘附层550可以包括聚合物(例如,环氧类聚合物)。粘附层550可以在模塑层500与保护膜400之间密封。因此,没有外部杂质会被引入模塑层500与保护膜400之间。在此示例性实施例中,如图3B中所示的模塑层500、盖300和粘附层550的外侧表面可以是共面的。
与所示的不同,可以不设置第三感测装置223和第四感测装置224中的一个。又例如,还可以在控制装置210上设置第五感测装置。
图3C示出展示根据示例性实施例的气体传感器封装件的沿图3A的线I-II截取的剖视图。在下文中将省略与上述重复的描述。
参照图3A和图3C,气体传感器封装件14可以包括封装基底100,控制装置210、感测装置221、222、223和224、盖300、保护膜400以及模塑层500。封装基底100、控制装置210、感测装置221至224、保护膜400和模塑层500可以与上面参照图3A和图3B所讨论的封装基底100、控制装置210、感测装置221至224、保护膜400和模塑层500基本相同。相比之下,盖300可以设置在模塑层500的顶表面和侧壁上。盖300可以与上面参照图1A和图1B所讨论的盖300基本相同。例如,盖300可以如上面图1B中所示的通过连接构件130刚性地粘附到封装基底100。盖300可以通过连接构件130电连接到上接地垫115。
图4A示出展示根据示例性实施例的气体传感器封装件的平面图。图4B示出沿图4A的线I-II截取的剖视图。在下文中将省略与上述重复的描述。
参照图4A和图4B,气体传感器封装件15可以包括封装基底100、控制装置210、感测装置221、222、223和224、盖300、保护膜400以及模塑层500。封装基底100和控制装置210可以与上面参照图1A和图1B所讨论的封装基底100和控制装置210基本相同。感测装置221至224、盖300和模塑层500可以与上面参照图3A和图3B所讨论的基本相同。盖300可以设置在模塑层500的顶表面上。盖300还可以如上面图3C中所示的延伸到模塑层500的侧壁上。
保护膜400可以设置在盖300的第一表面300a上并且阻挡孔390。当在平面图中观看时,保护膜400可以与孔390叠置。保护膜400可以具有比孔390的宽度之和大的宽度。保护膜400可以是柔性的或柔软的。然而,保护膜400可以通过盖300刚性地固定。
粘附膜350可以插置在盖300与保护膜400之间。当在平面图中观看时,粘附膜350可以不与孔390叠置。保护膜400可以通过粘附膜350粘附到盖300。粘附膜350可以在盖300与保护膜400之间密封。因此,没有外部杂质会被引入在盖300与保护膜400之间。粘附层550可以插置在模塑层500与盖300之间。
图4C示出展示根据示例性实施例的气体传感器封装件的沿图4A的线I-II截取的剖视图。在下文中将省略与上述重复的描述。
参照图4A和图4C,气体传感器封装件16可以包括封装基底100、控制装置210、感测装置221、222、223和224、盖300、保护膜400以及模塑层500。盖300可以设置在模塑层500的顶表面上。再例如,盖300还可以如上面图3C中所示的延伸到模塑层500的侧壁上。
保护膜400可以设置在盖300的第二表面300b上,阻挡孔390。保护膜400可以通过粘附膜350粘附到盖300。保护膜400可以通过盖300更加刚性地固定。当在平面图中观看时,保护膜400可以与孔390叠置。粘附层550可以设置在模塑层500与保护膜400之间。因此,根据示例性实施例,保护膜400的上表面与粘附膜350的下表面接触,并且保护膜400的下表面与粘附层550的上表面接触。根据示例性实施例,如图4B和图4C中所示,盖300的侧部分可以不延伸并且不接触封装基底100的上表面。当元件被称为“与”另一元件“接触”时,在接触点处不存在中间元件。
图5示出展示根据示例性实施例的气体传感器封装件的剖视图。在下文中将省略与上述重复的描述。
参照图5,气体传感器封装件17可以包括封装基底100、控制装置210、第一感测装置221、第二感测装置222、保护膜400以及模塑层500。封装基底100、控制装置210、第一感测装置221、第二感测装置222以及模塑层500可以与上面参照图3A和图3B讨论的封装基底100、控制装置210、第一感测装置221、第二感测装置222以及模塑层500基本相同。尽管未示出,控制装置210还可以被设置为在控制装置210上具有第三感测装置和第四感测装置。相比之下,可以不设置盖300。
保护膜400可以设置在模塑层500上,并且与感应装置221和222中的每个的顶表面220a间隔开。腔体195可以通过感测装置221和222、模塑层500以及保护膜400来限定。例如,腔体195可以设置在保护膜400与感测装置221和222之间。腔体195可以暴露感测部231和232。
粘附层550可以插置在保护膜400与模塑层500之间。保护膜400可以通过粘附层550粘附到模塑层500。粘附层550可以不在保护膜400与腔体195之间延伸。
根据发明构思,保护膜可以防止杂质进入孔。因此,可以使防止或减少由于杂质引起的感测噪声的发生以及对感测装置的损坏成为可能。
在一些实施例中,感测装置可以设置为多个。多个感测装置可以感测彼此不同类型的气体。结果,可以分析各种气体。
尽管这里描述的图可以使用诸如“示例实施例”、“一个实施例”或者“某些实施例”的语言来提及,但是除非上下文如此表明,否则这些图和它们的相应描述并不意图与其它图或者描述相互排斥。因此,某些附图中的某些方面可以与其它附图中的某些特征相同,和/或某些附图可以是具体示例性实施例的不同表示或不同部分。
发明构思的此详细描述不应被解释为限于这里阐述的实施例,并且在不脱离发明构思的精神和范围的情况下,发明构思意图涵盖此发明的各种组合、修改和变化。所附权利要求应被解释为包括其它实施例。
Claims (20)
1.一种气体传感器封装件,所述气体传感器封装件包括:
封装基底;
控制器,位于封装基底上;
多个气体传感器,在控制器的上表面上彼此横向间隔开;
盖,位于封装基底上并且安置在所述多个气体传感器上方,盖具有在盖的第一表面与第二表面之间延伸的孔,盖的第一表面背向封装基底并且盖的第二表面面向封装基底;以及
保护膜,覆盖盖的孔,
其中,所述多个气体传感器被构造为感测不同类型的气体。
2.根据权利要求1所述的气体传感器封装件,所述气体传感器封装件还包括:模塑层,位于封装基底上并且部分地覆盖所述多个气体传感器中的每个的顶表面。
3.根据权利要求2所述的气体传感器封装件,其中,所述多个气体传感器中的每个包括彼此横向间隔开并设置在所述多个气体传感器中的每个的顶表面上的感测部和结合垫,并且
其中,模塑层覆盖结合垫并且暴露感测部。
4.根据权利要求3所述的气体传感器封装件,
其中,所述多个气体传感器包括彼此相邻的第一气体传感器和第二气体传感器,并且
其中,当在平面图中观看时,第一气体传感器的感测部和第二气体传感器的感测部设置在第一气体传感器的结合垫与第二气体传感器的结合垫之间。
5.根据权利要求1所述的气体传感器封装件,所述气体传感器封装件还包括:第一键合引线,结合到控制器和所述多个气体传感器中的一个。
6.根据权利要求5所述的气体传感器封装件,所述气体传感器封装件还包括:第二键合引线,结合到控制器和封装基底。
7.根据权利要求1所述的气体传感器封装件,
其中,所述多个气体传感器包括感测部,并且
其中,所述多个气体传感器中的一个气体传感器的感测部由具有与所述多个气体传感器中的另一个气体传感器的感测部的材料组分不同的材料组分的材料形成。
8.根据权利要求1所述的气体传感器封装件,所述气体传感器封装件还包括:
接地垫,位于封装基底上;和
连接构件,位于封装基底与盖之间,
其中,连接构件结合到接地垫。
9.根据权利要求1所述的气体传感器封装件,其中,保护膜阻挡盖的孔。
10.根据权利要求9所述的气体传感器封装件,
其中,保护膜包括防水膜,
其中,保护膜设置在孔中,
其中,防水膜在孔中具有从10μm至500μm范围的厚度,并且
其中,防水膜具有气孔,每个气孔具有从0.1μm到10μm范围的直径。
11.根据权利要求9所述的气体传感器封装件,其中,保护膜设置在盖的表面上,并且当在平面图中观看时,与孔叠置。
12.一种气体传感器封装件,所述气体传感器封装件包括:
封装基底;
第一气体传感器,位于封装基底上,第一气体传感器包括在第一气体传感器的顶表面上彼此横向间隔开的第一感测部和第一结合垫;
第二气体传感器,位于封装基底上,第二气体传感器包括在第二气体传感器的顶表面上彼此横向间隔开的第二感测部和第二结合垫;
模塑层,位于封装基底上,模塑层覆盖第一结合垫和第二结合垫;以及
保护膜,位于模塑层上,保护膜与第一气体传感器的顶表面和第二气体传感器的顶表面间隔开,
其中,模塑层暴露第一感测部和第二感测部。
13.根据权利要求12所述的气体传感器封装件,
其中,在平面图中,第一感测部安置为比第一结合垫靠近第一气体传感器的第一侧壁,
其中,在平面图中,第二感测部安置为比第二结合垫靠近第二气体传感器的第一侧壁,并且
其中,第二气体传感器的第一侧壁面对第一气体传感器的第一侧壁。
14.根据权利要求12所述的气体传感器封装件,所述气体传感器封装件还包括:
盖,位于模塑层上并且安置在第一气体传感器和第二气体传感器上方,盖具有在盖的第一表面与第二表面之间延伸的孔,盖的第一表面背向封装基底并且盖的第二表面面向封装基底,
其中,保护膜阻挡孔。
15.根据权利要求14所述的气体传感器封装件,
其中,孔包括至少两个孔,并且
其中,在平面图中,保护膜与所述至少两个孔叠置。
16.根据权利要求15所述的气体传感器封装件,所述气体传感器封装件还包括被第一气体传感器、第二气体传感器、模塑层和保护膜包围的腔体。
17.根据权利要求15所述的气体传感器封装件,所述气体传感器封装件还包括设置在封装基底上的控制器,
其中,第一气体传感器和第二气体传感器堆叠在控制器上并且在控制器的顶表面上彼此横向间隔开。
18.根据权利要求12所述的气体传感器封装件,其中,保护膜包括疏水聚合物。
19.根据权利要求12所述的气体传感器封装件,其中,第二感测部被构造为感测与通过第一感测部感测的气体的类型不同的类型的气体。
20.根据权利要求12所述的气体传感器封装件,所述气体传感器封装件还包括:
第三气体传感器,位于封装基底上,第三气体传感器包括在第三气体传感器的顶表面上彼此横向间隔开的第三感测部和第三结合垫;以及
第四气体传感器,位于封装基底上,第四气体传感器包括在第四气体传感器的顶表面上彼此横向间隔开的第四感测部和第四结合垫,
其中,模塑层覆盖第三结合垫和第四结合垫并且暴露第三感测部和第四感测部。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113213417A (zh) * | 2020-02-06 | 2021-08-06 | 日月光半导体制造股份有限公司 | 传感器设备封装和其制造方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109788626B (zh) * | 2017-11-10 | 2021-10-08 | 广州立景创新科技有限公司 | 具有防水洗结构的模组 |
KR102437764B1 (ko) * | 2017-12-20 | 2022-08-30 | 삼성전자주식회사 | 센서 패키지, 센서 패키지의 제조 방법, 및 리드 구조체의 제조 방법 |
US10892199B2 (en) * | 2019-04-01 | 2021-01-12 | Advanced Semiconductor Engineering, Inc. | Semiconductor package structure, product and method for manufacturing the same |
TWI717178B (zh) | 2019-12-30 | 2021-01-21 | 財團法人工業技術研究院 | 一種具氣密空腔的微機電裝置 |
CN115768340A (zh) * | 2020-06-17 | 2023-03-07 | 奈克斯赛瑞斯创新控股有限责任公司 | 用于监测气体分析物的系统和方法 |
TWI808541B (zh) * | 2021-11-22 | 2023-07-11 | 財團法人工業技術研究院 | 晶片封裝結構的透氣封裝蓋及其製造方法 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4457161A (en) * | 1980-10-09 | 1984-07-03 | Hitachi, Ltd. | Gas detection device and method for detecting gas |
US20070107493A1 (en) * | 2003-12-01 | 2007-05-17 | Ngk Spark Plug Co., Ltd. | Gas sensor |
JP2010008371A (ja) * | 2008-06-30 | 2010-01-14 | Hitachi Ltd | 可燃性ガスセンサ |
JP2010258079A (ja) * | 2009-04-22 | 2010-11-11 | Ngk Spark Plug Co Ltd | センサ素子実装パッケージ |
US20150069537A1 (en) * | 2013-09-08 | 2015-03-12 | Wai Yew Lo | Package-on-package semiconductor sensor device |
KR20150031710A (ko) * | 2013-09-16 | 2015-03-25 | 엘지이노텍 주식회사 | 가스센서패키지 및 그 제조방법 |
US20150226688A1 (en) * | 2014-02-07 | 2015-08-13 | Ngk Spark Plug Co., Ltd. | Gas detector |
US20150285772A1 (en) * | 2014-04-07 | 2015-10-08 | Innochips Technology Co., Ltd. | Sensor device |
WO2016100621A1 (en) * | 2014-12-17 | 2016-06-23 | Robert Bosch Gmbh | Exposed-die mold package for a sensor and method for encapsulating a sensor that interacts with the environment |
KR20170000961A (ko) * | 2015-06-25 | 2017-01-04 | 크루셜텍 (주) | 센서 패키지 및 이의 제조방법 |
CN205879838U (zh) * | 2016-07-29 | 2017-01-11 | 合肥微纳传感技术有限公司 | 一种微型气体传感器的封装结构 |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6140144A (en) * | 1996-08-08 | 2000-10-31 | Integrated Sensing Systems, Inc. | Method for packaging microsensors |
US6586824B1 (en) * | 2001-07-26 | 2003-07-01 | Amkor Technology, Inc. | Reduced thickness packaged electronic device |
US7479255B2 (en) | 2001-11-15 | 2009-01-20 | Riken Keiki Co., Ltd. | Gas sensor |
ATE369574T1 (de) * | 2002-01-25 | 2007-08-15 | Schwerionenforsch Gmbh | Detektor zur erfassung von teilchenstrahlen und verfahren zur herstellung desselben |
US6793829B2 (en) * | 2002-02-27 | 2004-09-21 | Honeywell International Inc. | Bonding for a micro-electro-mechanical system (MEMS) and MEMS based devices |
JP3746728B2 (ja) * | 2002-04-10 | 2006-02-15 | 日本特殊陶業株式会社 | センサおよびその製造方法 |
GB0227686D0 (en) * | 2002-11-27 | 2003-01-08 | City Tech | Gas sensing device |
JP2004286685A (ja) * | 2003-03-24 | 2004-10-14 | Denso Corp | ガス濃度検出装置 |
JP2004294214A (ja) * | 2003-03-26 | 2004-10-21 | Nippon Soken Inc | ガス検出装置 |
DE102005020131B3 (de) * | 2005-04-30 | 2006-05-11 | Dräger Safety AG & Co. KGaA | Gassensor zum Nachweis von brennbaren Gasen |
US7936062B2 (en) * | 2006-01-23 | 2011-05-03 | Tessera Technologies Ireland Limited | Wafer level chip packaging |
US7468556B2 (en) * | 2006-06-19 | 2008-12-23 | Lv Sensors, Inc. | Packaging of hybrid integrated circuits |
JP4450031B2 (ja) | 2007-08-22 | 2010-04-14 | 株式会社デンソー | 半導体部品 |
US8900931B2 (en) * | 2007-12-26 | 2014-12-02 | Skyworks Solutions, Inc. | In-situ cavity integrated circuit package |
JP2012047451A (ja) | 2010-08-24 | 2012-03-08 | Alps Electric Co Ltd | 物理量センサ装置 |
US9324586B2 (en) * | 2011-08-17 | 2016-04-26 | Infineon Technologies Ag | Chip-packaging module for a chip and a method for forming a chip-packaging module |
US8852513B1 (en) | 2011-09-30 | 2014-10-07 | Silicon Laboratories Inc. | Systems and methods for packaging integrated circuit gas sensor systems |
EP2774390A4 (en) * | 2011-11-04 | 2015-07-22 | Knowles Electronics Llc | EMBEDDED DIELEKTRIKUM AS A BARRIER IN AN ACOUSTIC DEVICE AND METHOD OF MANUFACTURING |
EP2706567A1 (en) | 2012-09-11 | 2014-03-12 | Nxp B.V. | Integrated circuit including an environmental sensor |
US9851336B2 (en) * | 2013-09-16 | 2017-12-26 | Lg Innotek Co., Ltd. | Gas sensor package |
CN104458865B (zh) * | 2013-09-16 | 2018-11-16 | Lg伊诺特有限公司 | 气体传感器组件 |
KR20150072687A (ko) * | 2013-12-20 | 2015-06-30 | 삼성전기주식회사 | 가스 센서 패키지 |
KR20150074427A (ko) | 2013-12-24 | 2015-07-02 | 삼성전기주식회사 | 센서 패키지 및 이를 구비하는 휴대 단말기 |
KR20150090705A (ko) | 2014-01-29 | 2015-08-06 | 삼성전기주식회사 | 센서 패키지 및 그 제조 방법 |
US9778238B2 (en) | 2014-09-09 | 2017-10-03 | Ams International Ag | Resonant CO2 sensing with mitigation of cross-sensitivities |
TWI513981B (zh) * | 2014-11-13 | 2015-12-21 | Ind Tech Res Inst | 具多重氣密空腔的微機電裝置及其製作方法 |
KR20160061842A (ko) * | 2014-11-24 | 2016-06-01 | 엘지이노텍 주식회사 | 가스 센서 패키지 및 그 제조 방법 |
US9794661B2 (en) * | 2015-08-07 | 2017-10-17 | Knowles Electronics, Llc | Ingress protection for reducing particle infiltration into acoustic chamber of a MEMS microphone package |
US10186468B2 (en) * | 2016-03-31 | 2019-01-22 | Infineon Technologies Ag | System and method for a transducer in an eWLB package |
KR102609714B1 (ko) * | 2016-04-27 | 2023-12-05 | 엘지전자 주식회사 | 센서 |
US10877011B2 (en) * | 2016-06-29 | 2020-12-29 | Nexceris, Llc | Systems and methods for monitoring for a gas analyte |
JP6375343B2 (ja) * | 2016-08-25 | 2018-08-15 | Nissha株式会社 | ガスセンサ |
US11204346B2 (en) * | 2016-09-21 | 2021-12-21 | Sensirion Ag | Gas sensor with filter |
DE102016121683B4 (de) * | 2016-11-11 | 2020-06-18 | Infineon Technologies Ag | Sensorvorrichtung, die eine sensoreinheit für ein gasförmiges medium enthält |
CN108426921B (zh) * | 2017-02-13 | 2021-04-06 | 华邦电子股份有限公司 | 气体传感器 |
US10481119B2 (en) * | 2017-12-04 | 2019-11-19 | Foshan Sensicfusion Technology Co., LTD | Force sensor array having an energy-absorbing film layer with an elastic deformability that converts kinetic energy into heat energy |
KR102520038B1 (ko) * | 2018-01-10 | 2023-04-12 | 삼성전자주식회사 | 가스 센서 패키지 및 이를 포함하는 센싱 장치 |
-
2018
- 2018-01-02 KR KR1020180000190A patent/KR102466332B1/ko active IP Right Grant
- 2018-08-23 US US16/109,758 patent/US11125734B2/en active Active
- 2018-12-17 CN CN201811540317.9A patent/CN109991300B/zh active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4457161A (en) * | 1980-10-09 | 1984-07-03 | Hitachi, Ltd. | Gas detection device and method for detecting gas |
US20070107493A1 (en) * | 2003-12-01 | 2007-05-17 | Ngk Spark Plug Co., Ltd. | Gas sensor |
JP2010008371A (ja) * | 2008-06-30 | 2010-01-14 | Hitachi Ltd | 可燃性ガスセンサ |
JP2010258079A (ja) * | 2009-04-22 | 2010-11-11 | Ngk Spark Plug Co Ltd | センサ素子実装パッケージ |
US20150069537A1 (en) * | 2013-09-08 | 2015-03-12 | Wai Yew Lo | Package-on-package semiconductor sensor device |
KR20150031710A (ko) * | 2013-09-16 | 2015-03-25 | 엘지이노텍 주식회사 | 가스센서패키지 및 그 제조방법 |
US20150226688A1 (en) * | 2014-02-07 | 2015-08-13 | Ngk Spark Plug Co., Ltd. | Gas detector |
US20150285772A1 (en) * | 2014-04-07 | 2015-10-08 | Innochips Technology Co., Ltd. | Sensor device |
WO2016100621A1 (en) * | 2014-12-17 | 2016-06-23 | Robert Bosch Gmbh | Exposed-die mold package for a sensor and method for encapsulating a sensor that interacts with the environment |
KR20170000961A (ko) * | 2015-06-25 | 2017-01-04 | 크루셜텍 (주) | 센서 패키지 및 이의 제조방법 |
CN205879838U (zh) * | 2016-07-29 | 2017-01-11 | 合肥微纳传感技术有限公司 | 一种微型气体传感器的封装结构 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113213417A (zh) * | 2020-02-06 | 2021-08-06 | 日月光半导体制造股份有限公司 | 传感器设备封装和其制造方法 |
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