CN109923683A - 微型发光二极管及其制作方法 - Google Patents

微型发光二极管及其制作方法 Download PDF

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Publication number
CN109923683A
CN109923683A CN201780049112.8A CN201780049112A CN109923683A CN 109923683 A CN109923683 A CN 109923683A CN 201780049112 A CN201780049112 A CN 201780049112A CN 109923683 A CN109923683 A CN 109923683A
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electrode
micro
led
semiconductor layer
extension lamination
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CN201780049112.8A
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CN109923683B (zh
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李佳恩
徐宸科
吴政
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Hubei San'an Photoelectric Co ltd
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Xiamen Sanan Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2632—Circuits therefor for testing diodes
    • G01R31/2635—Testing light-emitting diodes, laser diodes or photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Abstract

公开了一种微型发光二极管、显示装置及其制作方法，其至少在一个电极上设置连接区用于金属联线，达到Micro‑LED全测目的。微型发光二极管芯片（100）包括：外延叠层（110），依次包含第一类型半导体层（112）、有源层（113）、第二类型半导体层（114），其具有相对的第一表面和第二表面；第一电极（121），形成于外延叠层（110）的第二表面之上，与第一类型半导体层（112）连接；第二电极（122），形成于外延叠层（110）的第二表面之上，与第二类型半导体层（114）连接；第一电极（121）和第二电极（122）表面上分别设有第一连接区（123）。第一连接区（123）可从表面形貌或外观颜色上区别于所在电极的其他区域。

Description

PCT国内申请，说明书已公开。

Claims (1)

  1. PCT国内申请，权利要求书已公开。
CN201780049112.8A 2017-09-15 2017-09-15 微型发光二极管及其制作方法 Active CN109923683B (zh)

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PCT/CN2017/101860 WO2019051764A1 (zh) 2017-09-15 2017-09-15 微型发光二极管及其制作方法

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CN112582383A (zh) * 2019-09-27 2021-03-30 成都辰显光电有限公司 芯片结构及芯片检测方法
CN112750851A (zh) * 2019-10-31 2021-05-04 成都辰显光电有限公司 微发光元件阵列基板、制备方法以及转移方法
CN113161499A (zh) * 2021-04-13 2021-07-23 浙江大学 光电器件及其制造方法
CN114447173A (zh) * 2022-01-28 2022-05-06 京东方晶芯科技有限公司 发光器件及其制备方法、发光装置

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CN109923683B (zh) * 2017-09-15 2022-04-05 厦门市三安光电科技有限公司 微型发光二极管及其制作方法
TWI779242B (zh) * 2019-10-28 2022-10-01 錼創顯示科技股份有限公司 微型發光二極體裝置
CN113450681A (zh) * 2020-03-24 2021-09-28 重庆康佳光电技术研究院有限公司 一种微发光二极管显示器生产检测方法及其显示器
GB2593698B (en) * 2020-03-30 2022-12-07 Plessey Semiconductors Ltd Monolithic electronic device
CN111785751A (zh) * 2020-06-23 2020-10-16 东莞市中晶半导体科技有限公司 可区块电测的Micro LED晶圆及转移方法
CN112259572B (zh) * 2020-10-26 2022-11-08 錼创显示科技股份有限公司 微型发光二极管显示器
TWI824591B (zh) * 2022-06-29 2023-12-01 晶呈科技股份有限公司 Led電路基板結構、led測試封裝方法及led畫素封裝體

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112582383A (zh) * 2019-09-27 2021-03-30 成都辰显光电有限公司 芯片结构及芯片检测方法
CN112582383B (zh) * 2019-09-27 2022-12-20 成都辰显光电有限公司 芯片结构及芯片检测方法
CN112750851A (zh) * 2019-10-31 2021-05-04 成都辰显光电有限公司 微发光元件阵列基板、制备方法以及转移方法
CN112750851B (zh) * 2019-10-31 2023-01-20 成都辰显光电有限公司 微发光元件阵列基板、制备方法以及转移方法
CN113161499A (zh) * 2021-04-13 2021-07-23 浙江大学 光电器件及其制造方法
CN113161499B (zh) * 2021-04-13 2022-06-17 浙江大学 光电器件及其制造方法
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CN114447173B (zh) * 2022-01-28 2024-04-16 京东方晶芯科技有限公司 发光器件及其制备方法、发光装置

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Publication number Publication date
CN109923683B (zh) 2022-04-05
US11424387B2 (en) 2022-08-23
US20220375992A1 (en) 2022-11-24
TW201916409A (zh) 2019-04-16
TWI670869B (zh) 2019-09-01
CN114678453A (zh) 2022-06-28
US20200220047A1 (en) 2020-07-09
WO2019051764A1 (zh) 2019-03-21

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Effective date of registration: 20231026

Address after: 436000 No. 18, Gaoxin fifth road, Gedian Development Zone, Ezhou City, Hubei Province

Patentee after: Hubei San'an photoelectric Co.,Ltd.

Address before: 361009 no.1721-1725, Luling Road, Siming District, Xiamen City, Fujian Province

Patentee before: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd.